+

WO1996037000A1 - Composant semi-conducteur electroluminescent - Google Patents

Composant semi-conducteur electroluminescent Download PDF

Info

Publication number
WO1996037000A1
WO1996037000A1 PCT/DE1996/000761 DE9600761W WO9637000A1 WO 1996037000 A1 WO1996037000 A1 WO 1996037000A1 DE 9600761 W DE9600761 W DE 9600761W WO 9637000 A1 WO9637000 A1 WO 9637000A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
active zone
mesa
radiation
cladding
Prior art date
Application number
PCT/DE1996/000761
Other languages
German (de)
English (en)
Inventor
Jochen Heinen
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1996037000A1 publication Critical patent/WO1996037000A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Definitions

  • the present invention relates to a light-emitting semiconductor diode with short rise and fall times of the radiation generation and high external efficiency of the radiation.
  • Efficient optocouplers with a high limit frequency require infrared diodes (or light-emitting diodes) with short rise and fall times of the radiation and high external efficiency of the radiation.
  • the possibility of quickly changing the radiation generation is achieved, among other things, by doping the active zone, by making the volume of the active zone as small as possible, by ensuring a high current density of the injected current, and by using low parasitic capacitances and inductors are present.
  • a high external efficiency, i. H. high radiation outward is achieved when the radiation generated in the semiconductor crystal and emitted in all directions strikes the interface between the semiconductor material and the environment at an angle at which no total reflection takes place, so that the radiation emits can leak the crystal.
  • DE AS 1 297 230 describes a light-emitting semiconductor diode which consists of a cylindrical disk made of n-type GaAs with a diameter of approximately 2 mm and a thickness of approximately 250 ⁇ m. A p-type active zone is produced in this disk by the diffusion of zinc atoms. This active zone is arranged circularly and concentrically to the disk and has a diameter of approximately 0.5 mm and a depth of approximately 10 ⁇ m. The ratio of the radii of the active zone and the cylindrical disc is chosen so that the emitted light on the jacket of the the disc-formed cylinder does not experience total internal reflection.
  • GB 2 280 061 A describes an LED in which the light emerges on the top and a Bragg reflector is provided for reflection of the radiation in this direction on the side of the active layer opposite the exit surface.
  • EP 0 582 078 A1 describes an LED provided for superluminescence, in which the light incident laterally on oblique end faces, the active layer, is first reflected at right angles to a Bragg reflector arranged parallel to this layer and then is reflected vertically upwards from this reflector.
  • DE 42 31 007 AI describes an LED in which a front side provided for the light exit, including the almost flat side surfaces, with the exception of an area covered with a contact, is covered with a reflection-reducing layer which improves the coupling-out of the radiation.
  • the object of the present invention is to provide a radiation-generating semiconductor component with a high external radiation efficiency and a rapid possibility of controlling the radiation intensity.
  • a cylindrical active zone made of semiconductor material and intended for generating radiation is located inside a cylindrical mesa and is arranged coaxially to this mesa.
  • the ratio of the radii of the cladding of the cylinders of this active zone and this mesa is determined in such a way that in all directions of the radiation emitted by the active zone there is no total reflection on the cladding of the cylinder formed by the mesa.
  • Bragg reflectors act below and above the active zone.
  • Figure 1 shows the dimensions of the mesa and the active zone in supervision.
  • FIGS 2 and 3 show embodiments of the diode according to the invention in cross section.
  • the diode is preferably made up of epitaxially grown layers.
  • the active zone a drawn in FIG. 2 preferably consists of MQW layers (multiple quantum well), which guarantee a small volume of the active regions producing the radiation with short lifetimes of the charge carriers and thus great speed and also a low absorption for them penetrating radiation.
  • the layer or MQW layer structure containing the active zone is arranged between cladding layers (p, n) arranged vertically with respect to the layer plane and transparent to the radiation. These cladding layers can have a thickness of up to a few ⁇ m and are doped on different sides of the active zone for electrical conduction to opposite conductivity types.
  • these cladding layers p, n can each comprise layers or layer sequences which cause reflection of the incident radiation to the lateral boundary surface of the mesa at an angle suitable for the exit of the radiation from the mesa.
  • the cladding layers can be made essentially of AlGaAs with an Al content of z. B. 10% to 15%, and for total reflection of the radiation guided in the cladding layers to the side surface of the mesa down layers of AlGaAs with an Al content of z. B. 70% to 100% available his.
  • layer sequences acting as Bragg reflectors can be present, which consist of a sequence of layers with alternately higher and lower refractive index.
  • These layers are such that these layer sequences act as Bragg reflectors B for the radiation impinging on them from the active zone, which reflect the radiation to the lateral boundary surfaces of the mesa.
  • the radiation is therefore essentially in the region held between these Bragg reflectors B, so that a contact K provided for current injection can be applied to the top of the cylindrical mesa containing the active zone and the cladding layers, without thereby covering an area provided for light exit with a material that absorbs or reflects radiation.
  • the active zone a is provided in a layer which consists of a semiconductor material suitable for generating radiation and comprises the entire lateral extent of the mesa
  • the area in which radiation is generated can be directed onto the cylindrical active zone provided in the middle of the Mesa can be limited by only injecting electricity into this area.
  • the contact K is only applied in the area F of the projection of the active zone perpendicular to the layer plane on the upper cladding layer p and in the outer ring-shaped area by an insulator layer I from the semi-conductor Term material electrically insulated.
  • the mesa is located on a substrate which is electrically conductively doped and which is provided with a second connection contact K on its rear side opposite the mesa.
  • the material system of GaAs can be used.
  • Ternary layers are then e.g. B. from AlGaAs, quaternary layers from AlInGaAs.
  • the material system from InP can also be used for this diode.
  • the contact provided for current injection is on the top of the mesa only in the ring-shaped outer area around the projection of the active zone perpendicular to the layer plane.
  • the contact has a round opening in this example, which is provided as a window for the exit of the radiation, above the active zone.
  • e.g. B. only the upper Bragg reflector can be omitted.
  • This layer sequence is z. B. formed in that a layer doped for electrical conduction of the opposite conductivity type is grown in the upper cladding layer.
  • this oppositely doped layer is redoped in the upper cladding layer, so that there are no pn or np junctions in the area above the active zone.
  • the region D provided with diffused dopant is indicated in FIG. 3 by the dashed line.
  • An anti-reflective layer AR is applied to the jacket of the cylinder formed by the mesa in order to reduce the partial reflection.
  • the mesa forms a cylinder with the radius R (see FIG. 1).
  • the active zone in the interior of this mesa is preferably also cylindrical with the radius r.
  • the active zone can either be formed by a cylindrical layer of semiconductor material suitable for generating radiation or by the described arrangement of the contact provided for current injection in the form provided.
  • the ratio of the radii of these cylinders is chosen so that all laterally emitted rays from radiation sources in the active zone hit the surface of the shell of the cylinder formed by the mesa at an angle ⁇ to the vertical (surface normal) that is smaller than that Critical angle for the total flexion between crystal semiconductor 'and the surrounding Medi ⁇ order.
  • the beam path for three different exit directions of the radiation is shown with arrows as an example.
  • the radiation strikes the outer surface of the mesa vertically and leaves the mesa in a straight line.
  • the radiation emitted by the edge areas of the active zone strikes the lateral surface at an angle ⁇ to the normal and is refracted in the direction of the arrow drawn in a continuous line or the arrow drawn in dashed lines.
  • the thickness of the cladding layers between the Bragg reflectors or the height of the mesa is such that, together with the ratio of the radii R, r shown in FIG Radiation takes place.
  • the active zone can therefore be smaller for a given dimension of the mesa than would correspond to this limit. If the diode is embedded in an amorphous solid body that is transparent to the radiation, larger values result for the quotient r / R. If the diode z. B. is embedded in casting resin with a refractive index of about 1.5, then the limit for the quotient r / R is about 0.44 at the specified refractive index for the semiconductor material. Because of the required rapid response of the diode to changes in the applied voltage, the volume of the active zone, that is to say the radius r, is chosen to be quite small. A value for r between 20 ⁇ m and 40 ⁇ m is favorable.
  • the angle between the radiation direction in the mesa and the perpendicular the lateral surface of the mesa from which the radiation emerges, at the point at which the radiation emerges, is also referred to below as ⁇ .
  • This angle assumes a maximum value for a radiation direction which, starting from a point at the edge of the active zone, is directed to a point on the jacket of the cylinder formed by the mesa, which lies on the side facing the radiation generation point. It is therefore only necessary to take into account points of radiation generation on the edge of the active zone.
  • ⁇ denotes the angle which is included by the radius directed in the plane of the radiation generation from the center of the active zone to this point of the radiation generation and by the projection of the plane perpendicular to the layer planes Center of the active zone to the point at which the radiation emerges from the mesa into the plane of the radiation generation.
  • the view shown in FIG. 1 results with the point of radiation generation A on the edge of the active zone and the point of exit of radiation B from the mesa, the points directed at these points from the center of the active zone outgoing rays projected into the plane of radiation generation include the angle ⁇ .
  • point B of the radiation exit is offset upwards or downwards perpendicular to the plane of the drawing; point A lies in the plane of the drawing (level of radiation generation).
  • the angle ⁇ is measured in the plane of the drawing.
  • point B must be projected into the drawing plane perpendicular to the drawing plane.
  • angle ⁇ is now to be regarded as a spatial angle that lies between the perpendicular to the surface of the cylinder formed by the mesa at point B and the connecting path between the point ten A and B is formed.
  • the following equation is obtained for this angle, in which the distance of point B from the drawing plane perpendicular to the drawing plane is again denoted by h:
  • the angle ⁇ is maximum if:
  • the maximum angle to the standard on the cylinder jacket of the mesa thus results for the radiation which, starting from the edge of the active zone, reaches the upper or lower edge of the mesa, specifically in the radiation direction which is perpendicular to the connection route between point A of the radiation generation and the projection of the center of the active zone perpendicular to the layer plane into the plane of the radiation exit from the mesa, which plane is coplanar with the layer plane (ie approximately the upper or lower base area of the surface of the mesa) ⁇ formed cylinders).

Landscapes

  • Led Devices (AREA)

Abstract

Une diode luminescente comportant une zone (a) active cylindrique disposée coaxialement dans un mesa cylindrique réalisé dans un matériau semi-conducteur entre des couches extérieures (p, n) de polarité opposée. Les rayons du cylindre de la zone active et le mesa, ainsi que la hauteur du mesa, sont dimensionnés de manière à ce qu'il n'y ait aucune réflexion totale du rayonnement émanant de la zone active, sur les surfaces latérales du mesa.
PCT/DE1996/000761 1995-05-18 1996-05-02 Composant semi-conducteur electroluminescent WO1996037000A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19518347 1995-05-18
DE19518347.9 1995-05-18

Publications (1)

Publication Number Publication Date
WO1996037000A1 true WO1996037000A1 (fr) 1996-11-21

Family

ID=7762301

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1996/000761 WO1996037000A1 (fr) 1995-05-18 1996-05-02 Composant semi-conducteur electroluminescent

Country Status (1)

Country Link
WO (1) WO1996037000A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000045443A1 (fr) * 1999-01-28 2000-08-03 Nova Crystals, Inc. Diodes electroluminescentes a performances elevees
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
DE10039435A1 (de) * 2000-08-11 2002-02-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit erhöhter Strahlungsauskopplung und Herstellungsverfahren hierfür
DE10054966A1 (de) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
US7135711B2 (en) 2001-08-30 2006-11-14 Osram Opto Semiconductors Gmbh Electroluminescent body
DE19953160B4 (de) * 1998-11-20 2009-01-22 Philips Lumileds Lighting Company, LLC, San Jose Verbesserte Elektrodenstrukturen für lichtemittierende Bauelemente
US7943944B2 (en) 2002-07-31 2011-05-17 Osram Opto Semiconductors Gmbh GaN-based radiation-emitting thin-layered semiconductor component
DE10142541B4 (de) * 2001-08-30 2013-10-17 Osram Opto Semiconductors Gmbh Elektrolumineszierender Körper
US8604497B2 (en) 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1062639A (en) * 1963-12-13 1967-03-22 Standard Telephones Cables Ltd Light emitting semiconductor devices
EP0047591A2 (fr) * 1980-09-10 1982-03-17 Northern Telecom Limited Diode à émission de lumière avec rendement quantique externe élevé
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1062639A (en) * 1963-12-13 1967-03-22 Standard Telephones Cables Ltd Light emitting semiconductor devices
EP0047591A2 (fr) * 1980-09-10 1982-03-17 Northern Telecom Limited Diode à émission de lumière avec rendement quantique externe élevé
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19953160B4 (de) * 1998-11-20 2009-01-22 Philips Lumileds Lighting Company, LLC, San Jose Verbesserte Elektrodenstrukturen für lichtemittierende Bauelemente
WO2000045443A1 (fr) * 1999-01-28 2000-08-03 Nova Crystals, Inc. Diodes electroluminescentes a performances elevees
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
US7026657B2 (en) 2000-04-19 2006-04-11 Osram Gmbh High radiance led chip and a method for producing same
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
WO2001080322A3 (fr) * 2000-04-19 2002-03-28 Osram Opto Semiconductors Gmbh Puce de del et son procede de production
US7306960B2 (en) 2000-04-19 2007-12-11 Osram Gmbh High radiance LED chip and a method for producing same
DE10039435A1 (de) * 2000-08-11 2002-02-28 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit erhöhter Strahlungsauskopplung und Herstellungsverfahren hierfür
US6897488B2 (en) 2000-11-06 2005-05-24 Osram Opto Semiconductors Gmbh Radiation-emitting chip
DE10054966A1 (de) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
US7135711B2 (en) 2001-08-30 2006-11-14 Osram Opto Semiconductors Gmbh Electroluminescent body
DE10142541B4 (de) * 2001-08-30 2013-10-17 Osram Opto Semiconductors Gmbh Elektrolumineszierender Körper
DE10142541B9 (de) 2001-08-30 2014-05-28 Osram Opto Semiconductors Gmbh Elektrolumineszierender Körper
US7943944B2 (en) 2002-07-31 2011-05-17 Osram Opto Semiconductors Gmbh GaN-based radiation-emitting thin-layered semiconductor component
US8604497B2 (en) 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip

Similar Documents

Publication Publication Date Title
DE19807758B4 (de) Lichtemittierende Diodenstruktur und Verfahren zu deren Herstellung
DE19629920B4 (de) Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
EP0905797B1 (fr) Source lumineuse à semi-conducteur et méthode de fabricaton
DE69400042T2 (de) Oberflächenemittierender Laser und dessen Herstellungsverfahren
DE69504276T2 (de) Licht-emittierende Vorrichtung und Verfahren zu ihrer Herstellung
EP1621918B1 (fr) Dispositif comprenant des diodes lumineuses permettant l'illumination homogène d'une zone rectangulaire et illumination de secours
DE69408374T2 (de) Lichtemittierende Halbleitervorrichtung
DE2460831A1 (de) Lichtemittierende vorrichtung
DE102011116232B4 (de) Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE69009448T2 (de) Halbleiterlaseranordnung.
DE10054966A1 (de) Bauelement für die Optoelektronik
DE19911717A1 (de) Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
DE102006035635A1 (de) Beleuchtungsanordnung
DE102013104954A1 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE3644380C2 (de) Lichtemittierende einrichtung mit einem scheibenfoermigen halbleiterkoerper
EP0849812A2 (fr) DEL avec découplage de la lumière omni directionnel
WO1996037000A1 (fr) Composant semi-conducteur electroluminescent
DE60101195T2 (de) Oberflächenemittierender Laser mit senkrechtem Resonator und integrierter Mikrolinse
DE19727233A1 (de) Strahlungsemittierendes optoelektronisches Bauelement
WO2008040274A1 (fr) Élément semi-conducteur del et son utilisation
DE3917936A1 (de) Lichtelektrisches element
DE10246891A1 (de) Selektive Anordnung von Quantentöpfen in Licht emittierenden Flip-Chip-Dioden zur verbesserten Lichtextraktion
DE69225632T2 (de) Optoelektronische Schaltervorrichtung
DE69620975T2 (de) Lichtemittierende Diode mit Resonator zur Wiederverwertung der Photonen
DE19823914B4 (de) Anordnung Licht emittierender Dioden

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载