+

WO1996021251B1 - Dispositif porteur minoritaire - Google Patents

Dispositif porteur minoritaire

Info

Publication number
WO1996021251B1
WO1996021251B1 PCT/US1996/000202 US9600202W WO9621251B1 WO 1996021251 B1 WO1996021251 B1 WO 1996021251B1 US 9600202 W US9600202 W US 9600202W WO 9621251 B1 WO9621251 B1 WO 9621251B1
Authority
WO
WIPO (PCT)
Prior art keywords
junction
type
chalcogenide component
minority carrier
component includes
Prior art date
Application number
PCT/US1996/000202
Other languages
English (en)
Other versions
WO1996021251A1 (fr
Filing date
Publication date
Application filed filed Critical
Priority to AU46950/96A priority Critical patent/AU4695096A/en
Publication of WO1996021251A1 publication Critical patent/WO1996021251A1/fr
Publication of WO1996021251B1 publication Critical patent/WO1996021251B1/fr

Links

Abstract

Un dispositif porteur minoritaire comprend au moins une jonction d'au moins deux matériaux dissemblables, dont au moins un est un semi-conducteur et une couche de passivation sur au moins une surface du dispositif. La couche de passivation comprend un élément du groupe 13 et un composé du type chalcogénure. Parmi les formes d'exécution des porteurs minoritaires, on peut citer, par exemple, les diodes laser, les diodes émettrices de lumière, les transistors à hétérojonction bipolaire et les cellules solaires.
PCT/US1996/000202 1995-01-06 1996-01-05 Dispositif porteur minoritaire WO1996021251A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU46950/96A AU4695096A (en) 1995-01-06 1996-01-05 Minority carrier device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36934695A 1995-01-06 1995-01-06
US08/369,346 1995-01-06

Publications (2)

Publication Number Publication Date
WO1996021251A1 WO1996021251A1 (fr) 1996-07-11
WO1996021251B1 true WO1996021251B1 (fr) 1996-09-06

Family

ID=23455085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/000202 WO1996021251A1 (fr) 1995-01-06 1996-01-05 Dispositif porteur minoritaire

Country Status (3)

Country Link
US (1) US6008525A (fr)
AU (1) AU4695096A (fr)
WO (1) WO1996021251A1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3616514B2 (ja) * 1998-11-17 2005-02-02 株式会社東芝 半導体集積回路及びその製造方法
US6922426B2 (en) * 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7095770B2 (en) * 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7257143B2 (en) 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7112545B1 (en) 1999-09-10 2006-09-26 The Board Of Trustees Of The University Of Arkansas Passivation of material using ultra-fast pulsed laser
AU7366800A (en) * 1999-09-10 2001-04-10 Board Of Trustees Of The University Of Arkansas, The Passivation of material using ultra-fast pulsed laser
US6998320B2 (en) * 2003-04-23 2006-02-14 Triquint Semiconductor, Inc. Passivation layer for group III-V semiconductor devices
WO2006001001A2 (fr) * 2004-06-25 2006-01-05 Dublin City University Dispositif electroluminescent destine a la production d'un rayonnement ultraviolet
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly
US7888707B2 (en) * 2005-12-09 2011-02-15 Macronix International Co., Ltd. Gated diode nonvolatile memory process
US7269062B2 (en) * 2005-12-09 2007-09-11 Macronix International Co., Ltd. Gated diode nonvolatile memory cell
US7272038B2 (en) * 2005-12-09 2007-09-18 Macronix International Co., Ltd. Method for operating gated diode nonvolatile memory cell
US7283389B2 (en) * 2005-12-09 2007-10-16 Macronix International Co., Ltd. Gated diode nonvolatile memory cell array
US7491599B2 (en) * 2005-12-09 2009-02-17 Macronix International Co., Ltd. Gated diode nonvolatile memory process
CN101221810B (zh) * 2006-11-20 2010-06-09 旺宏电子股份有限公司 栅极二极管非易失性存储器的操作
DE102007062050B4 (de) * 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
US7995384B2 (en) 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN105493251A (zh) * 2013-09-27 2016-04-13 英特尔公司 具有多层柔性衬底的非平面半导体器件
US10644210B2 (en) * 2016-04-01 2020-05-05 Nichia Corporation Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
US4017880A (en) * 1973-02-12 1977-04-12 Tokyo Shibaura Electric Co., Ltd. Red light emitting gallium phosphide device
US4095011A (en) * 1976-06-21 1978-06-13 Rca Corp. Electroluminescent semiconductor device with passivation layer
US4154631A (en) * 1977-05-27 1979-05-15 The United States Of America As Represented By The Secretary Of The Navy Equilibrium growth technique for preparing PbSx Se1-x epilayers
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
FR2454184A1 (fr) * 1979-04-10 1980-11-07 Chemla Daniel Structure de type isolant-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et l'isolant un sulfure, et procedes de fabrication de cette structure
JPS5670681A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Semiconductor luminous element
US4354198A (en) * 1980-05-30 1982-10-12 International Business Machines Corporation Zinc-sulphide capping layer for gallium-arsenide device
US4562378A (en) * 1982-07-08 1985-12-31 Sanyo Electric Co., Ltd. Gallium phosphide light-emitting diode
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
JPS59123226A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 半導体装置の製造装置
DE3312053C2 (de) * 1983-04-02 1985-03-28 Nukem Gmbh, 6450 Hanau Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle
US4839145A (en) * 1986-08-27 1989-06-13 Massachusetts Institute Of Technology Chemical vapor deposition reactor
US4751201A (en) * 1987-03-04 1988-06-14 Bell Communications Research, Inc. Passivation of gallium arsenide devices with sodium sulfide
US4811077A (en) * 1987-06-18 1989-03-07 International Business Machines Corporation Compound semiconductor surface termination
US4952527A (en) * 1988-02-19 1990-08-28 Massachusetts Institute Of Technology Method of making buffer layers for III-V devices using solid phase epitaxy
US4935384A (en) * 1988-12-14 1990-06-19 The United States Of America As Represented By The United States Department Of Energy Method of passivating semiconductor surfaces
US5168077A (en) * 1989-03-31 1992-12-01 Kabushiki Kaisha Toshiba Method of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor deposition
US4920078A (en) * 1989-06-02 1990-04-24 Bell Communications Research, Inc. Arsenic sulfide surface passivation of III-V semiconductors
EP0420188A1 (fr) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Structure semi-conductrice à hétérojonction
US5051786A (en) * 1989-10-24 1991-09-24 Mcnc Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
US5204871A (en) * 1990-03-29 1993-04-20 Larkins Eric C Bistable optical laser based on a heterostructure pnpn thyristor
US5274241A (en) * 1990-07-19 1993-12-28 Westinghouse Electric Corp. Optical and electromagnetic field
US5124278A (en) * 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5281831A (en) * 1990-10-31 1994-01-25 Kabushiki Kaisha Toshiba Optical semiconductor device
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5335219A (en) * 1991-01-18 1994-08-02 Ovshinsky Stanford R Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5596522A (en) * 1991-01-18 1997-01-21 Energy Conversion Devices, Inc. Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
EP0507611A1 (fr) * 1991-04-04 1992-10-07 Fujitsu Limited Procédé de croissance d'un cristal semiconducteur III-V par MOVPE
DE69218022T2 (de) * 1991-04-22 1997-08-14 Canon Kk Lichtemittierende Vorrichtung unter Verwendung von polykristallinem Halbleitermaterial und Herstellungsverfahren dafür
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5300320A (en) * 1992-06-23 1994-04-05 President And Fellows Of Harvard College Chemical vapor deposition from single organometallic precursors
US5326425A (en) * 1993-01-28 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Preparation of tertiarybutyldimethylantimony and use thereof
US5340408A (en) * 1993-04-19 1994-08-23 The University Of Delaware Inverse delta-doping for improved open circuit voltage of solar cells or photo diodes
US5491449A (en) * 1993-11-19 1996-02-13 Endgate Technology Corporation Dual-sided push-pull amplifier
US5760462A (en) * 1995-01-06 1998-06-02 President And Fellows Of Harvard College Metal, passivating layer, semiconductor, field-effect transistor
US5738721A (en) * 1995-01-06 1998-04-14 President And Fellows Of Harvard College Liquid precursor and method for forming a cubic-phase passivating/buffer film

Similar Documents

Publication Publication Date Title
WO1996021251B1 (fr) Dispositif porteur minoritaire
US4681982A (en) Light-electricity conversion semiconductor device
US7151307B2 (en) Integrated semiconductor circuits on photo-active Germanium substrates
US6316716B1 (en) Solar cell and method for producing such a cell
US4431858A (en) Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
US4707216A (en) Semiconductor deposition method and device
US5536953A (en) Wide bandgap semiconductor device including lightly doped active region
US4587547A (en) Electrode structure for a semiconductor devices
EP0250171A1 (fr) Dispositifs semi-conducteurs composites
CA1265626A (fr) Transistor a effet tunnel utilisant les electrons et les trous
US4631352A (en) High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
CA2109310A1 (fr) Diode laser bleu-vert
EP0607435A4 (fr) Dispositif semi-conducteur a base de nitrure et fabrication.
EP0142316A3 (fr) Photodiodes p-i-n et à avalanche
CA2054242A1 (fr) Dispositif luminescent au nitrure de gallium
KR960030439A (ko) 광 fet
EP0181391B1 (fr) Photodiode eclairee par l'arriere avec couche-chapeau a large espace de bande
Choi et al. Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's
KR890015353A (ko) 도전율 변조 mos 반도체 전력 디바이스(himos) 및 그 제조방법
EP0342866A3 (fr) Contact schottky pour dispositif semi-conducteur en composé du groupe III-V
US6191466B1 (en) Semiconductor device containing a diode
US5138403A (en) High temperature Schottky barrier bypass diodes
EP0029717A1 (fr) Cellule à mémoire statique du type bipolaire
MY104396A (en) Method for manufacturing an amorphous silicon thin film solar cell and schottky barrier diode on a common substrate.
KR970052054A (ko) 화합물 반도체 에피택셜웨이퍼
点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载