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WO1996017345A1 - Procede d'enregistrement et de lecture d'informations et dispositif d'enregistrement d'informations - Google Patents

Procede d'enregistrement et de lecture d'informations et dispositif d'enregistrement d'informations Download PDF

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Publication number
WO1996017345A1
WO1996017345A1 PCT/JP1995/002407 JP9502407W WO9617345A1 WO 1996017345 A1 WO1996017345 A1 WO 1996017345A1 JP 9502407 W JP9502407 W JP 9502407W WO 9617345 A1 WO9617345 A1 WO 9617345A1
Authority
WO
WIPO (PCT)
Prior art keywords
recording
recording medium
conductive probe
voltage
voltage applied
Prior art date
Application number
PCT/JP1995/002407
Other languages
English (en)
Inventor
Hiroyuki Kado
Takao Thoda
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Publication of WO1996017345A1 publication Critical patent/WO1996017345A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure

Definitions

  • This invention relates to a method of recording and reading information applying an atomic force microscope (described as "AFM” hereafter) and an information recording device.
  • AFM atomic force microscope
  • the above-mentioned methods were designed to improve recording density, in principle they have limitations on the improvement of recording density.
  • the recording density is limited due to the correlation between a minimized magnetic domain and weakened detecting signals.
  • the diameter of a pit which can be recorded and read, depends on the focused spot diameter of a laser beam in the light recording method, but the spot diameter is limited by the wavelength of the laser beam.
  • limitations are found in the magnetic optical recording method and the phase-change recording method when a laser beam is applied so as to record information.
  • Methods for changing the surface shapes and physical conditions of recording media include (1) a mechanical processing method of pressing a probe directly against a recording medium, (2) an electric field evaporation method of depositing probe materials on the surface of a recording medium or removing the materials from the surface of a recording medium by applying a strong electric field between a probe and a substrate, and (3) an electric method of changing the surface conditions of a recording medium by applying voltage between a probe and the medium and utilizing the heat energy of an electric current. It is particularly desirable to apply the method of utilizing phase changes disclosed in Published Unexamined (Kokai) Japanese Patent Application No. Hei 1- 298551.
  • a probe has to be spaced from the surface of a recording medium at a distance on the order of nm in the method applying STM, so that many problems in speed of operation are found when the method is applied for practical use.
  • the probe and recording medium are apart, a relatively large voltage has to be applied, thus damaging the probe.
  • information on concave and convex surfaces of a recording medium is included in a tunnel current when the surface conditions changed by the electric method are read by detecting the tunnel current, so that a complex operation and device are required so as to separate the information.
  • the method and device use an AFM technique and can erase and overwrite information at high density.
  • the method of recording information includes the recording operation of applying pulse voltage between a conductive probe and a recording medium so as to record data bits.
  • the conductive probe is carried by a cantilever and is set in contact with the recording medium, which includes an amorphous semiconductor thin film.
  • the erasing operation applies voltage having a polarity opposite to the voltage applied between a conductive probe and a recording medium during the recording operation so as to erase the data bits.
  • the pulse voltage applied between the conductive probe and the recording medium during the recording process has an absolute value larger than an absolute value of the voltage applied between the conductive probe and the recording medium during the erasing operation.
  • the voltage applied between the conductive probe and the recording medium during the recording process and the erasing process is controlled by selecting the thickness of the amorphous semiconductor thin film.
  • the amorphous semiconductor thin film includes at least one element selected from the group consisting of Ge, Si, Sb and Te.
  • the cantilever has a spring constant less than lN/m.
  • the method of recording information includes the recording operation of applying pulse voltage between a conductive probe and a recording medium while the conductive probe, which is carried at the end of a cantilever, is set in contact with the recording medium, which includes an amorphous semiconductor thin film, so as to record data bits.
  • the overwrite operation applies dc voltage having a polarity opposite to the voltage applied during the recording operation between a conductive probe and a recording medium while the conductive probe is shifted along and relative to the surface of the recording medium so as to overwrite the data bits.
  • the pulse voltage applied between the conductive probe and the recording medium during the recording process has an absolute value larger than an absolute value of the dc voltage applied between the conductive probe and the recording medium during the erasing operation. It is also preferable that the voltage applied between the conductive probe and the recording medium during the recording process and the erasing process is controlled by selecting the thickness of the amorphous conductor thin film. It is further preferable that the amorphous semiconductor thin film includes at least one element selected from the group consisting of Ge, Si, Sb and Te.
  • the method of reading information includes the steps of: shifting a conductive probe along and relative to the surface of a recording medium while dc voltage is applied between the conductive probe and the recording medium; and detecting electric current flowing between the conductive probe and the recording medium, thus reading data bits.
  • the dc voltage applied between the conductive probe and the recording medium is the same polarity as the voltage applied during a recording process and has an absolute value smaller than an absolute value of the voltage applied during the recording process.
  • the information recording device includes a recording medium containing an amorphous semiconductor thin film, a conductive probe carried by a cantilever, a means to shift the conductive probe relative to the recording medium while dc voltage is applied between the conductive probe and the recording medium, and a means to superimpose a pulse voltage on the dc voltage when the conductive probe reaches a recording section.
  • the device further includes a means to detect electric current flowing between the conductive probe and the recording medium.
  • the amorphous semiconductor thin film includes at least one element selected from the group consisting of Ge, Si, Sb and Te.
  • the cantilever has a spring constant less than lN/m.
  • the method of recording information includes the recording operation of applying pulse voltage between a conductive probe and a recording medium while the conductive probe, which is carried by a cantilever is set in contact with the recording medium including an amorphous semiconductor thin film, and the erasing operation of applying voltage having a polarity opposite to the voltage applied during the recording operation between a conductive probe and a recording medium. Therefore, unlike the method employing an STM, recording can be carried out with relatively low voltage in this method since the conductive probe fixed to the end of the cantilever is in contact with the surface of the recording medium. When the conductive probe is carried at the end of the cantilever, no large force acts on the probe even if it collides with the convex surfaces of the recording medium.
  • the method of recording information includes the recording operation of applying pulse voltage between a conductive probe and a recording medium while the conductive probe, which is carried at the end of a cantilever is set in contact with the recording medium including an amorphous semiconductor thin film, and the overwrite operation of applying dc voltage having a polarity opposite to the voltage applied between a conductive probe and a recording medium during the recording operation while the conductive probe is shifted along and relative to the surface of the recording medium.
  • an overwrite operation can be carried out with only one conductive probe. In the overwrite operation, new data bits are recorded while previously recorded data bits are erased.
  • the pulse voltage applied between the conductive probe and the recording medium during the recording process has an absolute value larger than an absolute value of the dc voltage applied between the conductive probe and the recording medium during the erasing operation, so that information can be erased stably.
  • the voltage applied between the conductive probe and the recording medium during the recording process and the erasing process is controlled by selecting the thickness of the amorphous semiconductor thin film in the methods. Therefore, information can be recorded and erased stably with low voltage.
  • Electric current flowing between the conductive probe and the recording medium is detected while the conductive probe is shifted relative to and along the surface of the recording medium with the application of dc voltage between the conductive probe and the recording medium.
  • the recording conditions (difference in conductivity) of the recording medium can be detected by sensing electric current flowing between the conductive probe and the recording medium, thus reading easily recorded data bits.
  • the dc voltage applied between the conductive probe and the recording medium is the same polarity as the voltage applied during a recording process and has an absolute value smaller than an absolute value of the voltage applied during the recording process, so that information is read stably.
  • the amorphous semiconductor thin film includes at least one element selected from the group consisting of Ge, Si, Sb and Te. Therefore, the change in value of resistance becomes stable and high in speed, and highly reliable recording and reading of information can be carried out at high speed.
  • the information recording device includes a recording medium containing an amorphous semiconductor thin film, a conductive probe carried at the end of a cantilever, a means to shift the conductive probe relative to the recording medium while dc voltage is applied between the conductive probe and the recording medium, and a means to superimpose pulse voltage on the dc voltage when the conductive probe reaches a recording section.
  • the information recording device to use the above- mentioned method can be realized. In other words, the information recording device can overwrite and record at high density.
  • the information recording device also includes a means to detect electric current flowing between the conductive probe and the recording medium.
  • the recording conditions (change in conductivity) of the recording medium can be detected by sensing electric current flowing between the conductive probe and the recording medium, thus reading easily recorded data bits.
  • the amorphous semiconductor thin film of the information recording device includes at least one element selected from the group consisting of Ge, Si, Sb and Te.
  • the cantilever of the information recording device has a spring constant less than IN/m, thus reducing abrasion generated by scanning the surface of the recording medium with a probe.
  • Fig. 1 is a schematic view of an information recording device of one embodiment of the invention.
  • Fig. 2 A is a diagram, showing an energy band model of an unrecorded region.
  • Fig. 2 B is a diagram, showing an energy band model of a recorded region.
  • Fig. 1 is a schematic view of an information recording device of one embodiment of the invention.
  • a 20nm thick GeSb 2 Te 4 thin film 2 which is one of the amorphous semiconductor materials in an amorphous condition, is formed on a conductive base material 1, thus preparing a recording medium 3.
  • recording medium 3 has a large value of resistance in its initial condition.
  • a conductive probe 4, which is placed on recording medium 3, is carried at the end of a cantilever 5.
  • the cantilever 5 is made of a SiN thin film and had O.lN/m spring constant, so as to reduce the damage generated by the collision with the surface of recording medium 3 during the recording or reading processes.
  • a lOOnm thick gold thin film is coated on the surface of cantilever 5 and conductive probe 4.
  • Cantilever 5 is fixed to an actuator 6 which can drive precisely in X, Y and Z directions, and conductive probe 4 can be shifted precisely over distances less than O.lnm along the surface of recording medium 3.
  • Voltage will be applied between conductive probe 4 and recording medium 3 from a dc voltage power source 7, a pulse voltage power source 8 and a voltage adder 9 for adding dc voltage and pulse voltage.
  • a protective resistor 10 of 1M ⁇ and a current amplifier 11 for detecting electric current flowing between conductive probe 4 and recording medium 3 are connected to the circuit. The method of recording information is explained by referring to Fig. 1.
  • Conductive probe 4 was shifted in the direction of the arrow at a speed of 2mm/sec by actuator 6 while the conductive probe 4 was in contact with the surface of recording medium 3. As soon as conductive probe 4 reached the position of recording information, the pulse voltage of +3V lasting 10 ⁇ sec was generated by pulse voltage power source 8, and the pulse voltage was applied to conductive probe 4. Resistance of a section 13 of recording medium 3 applied with pulse voltage became lower, thus recording data bits.
  • the method of reading recorded information is explained below.
  • the value of resistance at a recorded section was different from that at an unrecorded section, so that recorded data bits were detected by measuring the change in resistance. More specifically, conductive probe 4, which was in contact with recording medium 3, was shifted by actuator 6 while +0.5V dc voltage was applied to conductive probe 4 from power source 7, so that electric current was detected through current amplifier 11 and the difference in the value of resistance was found. As a result, recorded data bits were read. Reading voltage during the reading process should be at such a level that the value of resistance of the recording medium does not vary. In this example, The threshold of recorded voltage was 2.7V. Thus, it was necessary to read information by applying a voltage less than 2.7V. Recording section 13 read by this method was a circle with about 20nm diameter. When the size of recording data bits is in such a region, it is ossible to record information
  • the value of resistance of the recording medium increases or decreases by applying voltage from the conductive probe in the above-mentioned method, and this result is due to the change in an energy band structure of GeSbgTe. thin film 2 in an amorphous condition.
  • This mechanism is explained by referring to Figs. 2A and 2B.
  • Positively charged dangling bonds and negatively charged dangling bonds exist in the energy band of an amorphous semiconductor.
  • the energy band structure is like the one shown in Fig. 2A, so that electrons and electron holes cannot be shifted by the application of reading voltage +V R between a conductive probe and a conductive base material.
  • the electrons and electron holes recombine to the space charge formed in the vicinity of the interfaces, thus increasing the value of resistance.
  • the threshold of applied voltage for recording depends on the thickness of GeSbgTe. thin film 2 in an amorphous condition. As the film becomes thin, it is possible to record with lower voltage.
  • the recording threshold voltage in this example was 2.7V. However, recording becomes possible with 1.5V when the thickness is lOnm.
  • the polarities of voltage applied during recording, reading and erasing processes can be totally reversed.
  • -3V was applied to the conductive probe during the recording process
  • - 0.5V was applied during the reading process
  • +1V was applied during the erasing process.
  • gold on the surface of the probe is likely to shift due to an electric field. Thus, it was impossible to increase the voltage during the recording process very much.
  • the composition ratio of Ge-Sb-Te is not limited to GeSb-Te 4 .
  • the amorphous semiconductor thin film is not limited to GeSbTe, and a chalcogenide-based amorphous material can be applied in the invention as long as it contains at least one of Ge, Si, Sb and Te.
  • the material includes GeTe, SiTe, GeTeSn, SbTe, GaSb, SbSe, SnTe, PbTe, SbSe, BiSe, GeSe, Gain, InSbTe, amorphous Ge and amorphous Si .
  • a cantilever having a spring constant less than IN/m, damage of a probe during scanning is reduced significantly.
  • composition ratio of Ge-Sb-Te is not limited to GeSb 2 Te 4 .
  • the amorphous semiconductor thin film is not limited to GeSbTe, and a chalcogenide-based amorphous material can be applied in the invention as long as it contains at least one of Ge, Si, Sb and Te.
  • the material includes GeTe, SiTe, GeTeSn, SbTe, GaSb, SbSe, SnTe, PbTe, SbSe, BiSe, GeSe, Gain, InSbTe, amorphous Ge and amorphous Si.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

Un procédé et un appareil d'enregistrement d'informations permettent d'enregistrer, de lire, d'effacer et de recouvrir des informations avec une sonde (4) haute densité. Alors qu'une tension négative fournie par une source de tension c.c (7) est appliquée sur une sonde conductrice (4), à l'extrémité d'une console (5), la sonde conductrice (4) qui est en contact avec un support d'enregistrement (3) est déplacée. Une tension positive fournie par une source de tension pulsée (8) est appliquée sur la sonde conductrice (4) au niveau d'une section d'enregistrement, et l'opération de recouvrement est effectuée.
PCT/JP1995/002407 1994-11-29 1995-11-24 Procede d'enregistrement et de lecture d'informations et dispositif d'enregistrement d'informations WO1996017345A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29524894 1994-11-29
JP6/295248 1994-11-29

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Publication Number Publication Date
WO1996017345A1 true WO1996017345A1 (fr) 1996-06-06

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2198435C2 (ru) * 2000-04-11 2003-02-10 Государственный научно-исследовательский институт физических проблем им. Ф.В.Лукина Запоминающее устройство с электрическим зондовым считыванием

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0305033A2 (fr) * 1987-07-31 1989-03-01 Canon Kabushiki Kaisha Appareil d'enregistrement et appareil de reproduction
EP0335487A2 (fr) * 1988-03-31 1989-10-04 International Business Machines Corporation Emmagasinage de données utilisant des matériaux à changement de phase
EP0390470A2 (fr) * 1989-03-28 1990-10-03 Canon Kabushiki Kaisha Milieu et méthode d'emmagasinage et méthode de lecture de l'information emmagasinée
WO1991000592A2 (fr) * 1989-06-23 1991-01-10 The Board Of Trustees Of The Leland Stanford Junior University Methode et appareil pour le stockage d'informations numeriques sous forme de charges memorisees
EP0435645A1 (fr) * 1989-12-29 1991-07-03 Canon Kabushiki Kaisha Milieu d'enregistrement, procédé d'enregistrement et procédé de lecture
EP0551966A2 (fr) * 1986-12-24 1993-07-21 Canon Kabushiki Kaisha Appareil d'enregistrement et appareil de reproduction
EP0582290A2 (fr) * 1992-08-04 1994-02-09 Mitsubishi Chemical Corporation Dispositif de stockage par densité d'électrons
JPH0644618A (ja) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd 記録再生装置
JPH06300514A (ja) * 1993-04-16 1994-10-28 Matsushita Electric Ind Co Ltd 走査型探針顕微鏡および多重情報再生装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0551966A2 (fr) * 1986-12-24 1993-07-21 Canon Kabushiki Kaisha Appareil d'enregistrement et appareil de reproduction
EP0305033A2 (fr) * 1987-07-31 1989-03-01 Canon Kabushiki Kaisha Appareil d'enregistrement et appareil de reproduction
EP0335487A2 (fr) * 1988-03-31 1989-10-04 International Business Machines Corporation Emmagasinage de données utilisant des matériaux à changement de phase
JPH01298551A (ja) * 1988-03-31 1989-12-01 Internatl Business Mach Corp <Ibm> データ・ビツトを記録し、読み取る方法
EP0390470A2 (fr) * 1989-03-28 1990-10-03 Canon Kabushiki Kaisha Milieu et méthode d'emmagasinage et méthode de lecture de l'information emmagasinée
WO1991000592A2 (fr) * 1989-06-23 1991-01-10 The Board Of Trustees Of The Leland Stanford Junior University Methode et appareil pour le stockage d'informations numeriques sous forme de charges memorisees
EP0435645A1 (fr) * 1989-12-29 1991-07-03 Canon Kabushiki Kaisha Milieu d'enregistrement, procédé d'enregistrement et procédé de lecture
JPH0644618A (ja) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd 記録再生装置
EP0582290A2 (fr) * 1992-08-04 1994-02-09 Mitsubishi Chemical Corporation Dispositif de stockage par densité d'électrons
JPH06300514A (ja) * 1993-04-16 1994-10-28 Matsushita Electric Ind Co Ltd 走査型探針顕微鏡および多重情報再生装置

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
BARRETT R C ET AL: "CHARGE STORAGE IN A NITRIDE-OXIDE-SILICON MEDIUM BY SCANNING CAPACITANCE MICROSCOPY", JOURNAL OF APPLIED PHYSICS, vol. 70, no. 5, 1 September 1991 (1991-09-01), NEW YORK, US, pages 2725 - 2733, XP000263836 *
FUKANO Y ET AL: "TIME EVOLUTION OF ELECTROSTATIC FORCE INDUCED BY CONTACT-ELECTIFIED CHARGES ON THIN SILICON OXIDE SURFACE", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 29 August 1993 (1993-08-29), pages 609 - 611, XP000409446 *
H. FRITZSCHE ET AL.: "Electronic conduction in amorphous semiconductors and the physics of the switching phenomena", JOURNAL OF NON-CRYSTALLINE SOLIDS, vol. 2, AMSTERDAM, pages 393 - 405 *
H. KADO ET AL.: "Nanometer-scale recording on chalcogenide films with an atomic force microscope", APPLIED PHYSICS LETTERS, vol. 66, no. 22, 29 May 1995 (1995-05-29), WOODBURY, NY, US, pages 2961 - 2962 *
K. N. LAKSHMINARAYAN ET AL., IETE TECHNICAL REVIEW, vol. 2, no. 4, INDIA, pages 88 - 93 *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 278 (P - 1743) 26 May 1994 (1994-05-26) *
PATENT ABSTRACTS OF JAPAN vol. 940, no. 010 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2198435C2 (ru) * 2000-04-11 2003-02-10 Государственный научно-исследовательский институт физических проблем им. Ф.В.Лукина Запоминающее устройство с электрическим зондовым считыванием

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