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WO1995027292A1 - Procede de depot de dielectrique et/ou de conducteur sur un substrat - Google Patents

Procede de depot de dielectrique et/ou de conducteur sur un substrat Download PDF

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Publication number
WO1995027292A1
WO1995027292A1 PCT/FR1995/000426 FR9500426W WO9527292A1 WO 1995027292 A1 WO1995027292 A1 WO 1995027292A1 FR 9500426 W FR9500426 W FR 9500426W WO 9527292 A1 WO9527292 A1 WO 9527292A1
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric
conductive material
substrate
nitrogen plasma
depositing
Prior art date
Application number
PCT/FR1995/000426
Other languages
English (en)
Inventor
Ronan Stephan
Franck Callebert
Original Assignee
Compagnie Europeenne De Composants Electroniques Lcc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Europeenne De Composants Electroniques Lcc filed Critical Compagnie Europeenne De Composants Electroniques Lcc
Publication of WO1995027292A1 publication Critical patent/WO1995027292A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45517—Confinement of gases to vicinity of substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé de dépôt de couche de diélectrique et/ou de conducteur sur un substrat, caractérisé en ce qu'il comprend une étape de confinement dans un réacteur (6) d'un plasma différé d'azote et d'un gaz organo-silicé ou organo-germané au-dessus de la surface (1) dudit substrat de façon que ladite couche de diélectrique se dépose par polymérisation d'éléments issus de la dissociation par ledit plasma différé d'azote dudit gaz organo-silicé ou organo-germané et/ou une étape de confinement d'un plasma différé d'azote et d'un gaz précurseur d'éléments conducteurs de façon que ladite couche de conducteur soit réalisée par dépôt desdits éléments issus de la dissociation par ledit plasma différé d'azote dudit gaz précurseur. Les étapes de confinement permettent que le gradient de vitesse des gaz qui interviennent dans le processus de dépôt de diélectrique et/ou de conducteur s'établisse entre la partie centrale et les bords de la surface (1) du substrat de façon que le dépôt de diélectrique et/ou de conducteur présente une planéité sensiblement constante sur la totalité de la surface (1) du substrat.
PCT/FR1995/000426 1994-04-05 1995-04-04 Procede de depot de dielectrique et/ou de conducteur sur un substrat WO1995027292A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9403961A FR2718155B1 (fr) 1994-04-05 1994-04-05 Procédé de dépôt de diélectrique et/ou de métal sur un substrat.
FR94/03961 1994-04-05

Publications (1)

Publication Number Publication Date
WO1995027292A1 true WO1995027292A1 (fr) 1995-10-12

Family

ID=9461733

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR1995/000426 WO1995027292A1 (fr) 1994-04-05 1995-04-04 Procede de depot de dielectrique et/ou de conducteur sur un substrat

Country Status (2)

Country Link
FR (1) FR2718155B1 (fr)
WO (1) WO1995027292A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019438A2 (fr) * 2004-07-14 2006-02-23 Tokyo Electron Limited Depot chimique en phase vapeur basse temperature active par plasma de films contenant du silicium et de l'azote
EP1788117A1 (fr) * 2005-11-18 2007-05-23 United Technologies Corporation Revêtements multicouches de nitrure de bore/nitrure de silicium

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6302965B1 (en) * 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418676A (en) * 1977-07-13 1979-02-10 Hitachi Ltd Film formation method
US4599678A (en) * 1985-03-19 1986-07-08 Wertheimer Michael R Plasma-deposited capacitor dielectrics
WO1991017285A1 (fr) * 1990-05-09 1991-11-14 Schmitt Technology Associates Depot de materiaux en couche mince par jets de gaz associes a un plasma a ondes ultracourtes
GB2245600A (en) * 1990-07-06 1992-01-08 Plasmametal Metallising a surface using a plasma with a post-discharge zone

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2701492B1 (fr) * 1993-02-10 1996-05-10 Univ Lille Sciences Tech Procédé pour déposer une couche mince sur un substrat par plasma froid différé d'azote.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418676A (en) * 1977-07-13 1979-02-10 Hitachi Ltd Film formation method
US4599678A (en) * 1985-03-19 1986-07-08 Wertheimer Michael R Plasma-deposited capacitor dielectrics
WO1991017285A1 (fr) * 1990-05-09 1991-11-14 Schmitt Technology Associates Depot de materiaux en couche mince par jets de gaz associes a un plasma a ondes ultracourtes
GB2245600A (en) * 1990-07-06 1992-01-08 Plasmametal Metallising a surface using a plasma with a post-discharge zone

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KULISCH W: "Remote plasma-enhanced chemical vapour deposition with metal organic source gases: principles and applications", THIRD INTERNATIONAL CONFERENCE ON PLASMA SURFACE ENGINEERING, GARMISCH-PARTENKIRCHEN, GERMANY, 26-29 OCT. 1992, ISSN 0257-8972, SURFACE AND COATINGS TECHNOLOGY, 1 OCT. 1993, SWITZERLAND, PAGE(S) 193 - 201 *
PATENT ABSTRACTS OF JAPAN vol. 003, no. 040 (E - 102) 6 April 1979 (1979-04-06) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019438A2 (fr) * 2004-07-14 2006-02-23 Tokyo Electron Limited Depot chimique en phase vapeur basse temperature active par plasma de films contenant du silicium et de l'azote
WO2006019438A3 (fr) * 2004-07-14 2006-07-13 Tokyo Electron Ltd Depot chimique en phase vapeur basse temperature active par plasma de films contenant du silicium et de l'azote
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
EP1788117A1 (fr) * 2005-11-18 2007-05-23 United Technologies Corporation Revêtements multicouches de nitrure de bore/nitrure de silicium
US7510742B2 (en) 2005-11-18 2009-03-31 United Technologies Corporation Multilayered boron nitride/silicon nitride fiber coatings

Also Published As

Publication number Publication date
FR2718155A1 (fr) 1995-10-06
FR2718155B1 (fr) 1996-04-26

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