WO1995002563A1 - Aluminum nitride sintered body with high thermal conductivity and its preparation - Google Patents
Aluminum nitride sintered body with high thermal conductivity and its preparation Download PDFInfo
- Publication number
- WO1995002563A1 WO1995002563A1 PCT/US1994/004256 US9404256W WO9502563A1 WO 1995002563 A1 WO1995002563 A1 WO 1995002563A1 US 9404256 W US9404256 W US 9404256W WO 9502563 A1 WO9502563 A1 WO 9502563A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- weight
- earth metal
- percent
- aluminum nitride
- source
- Prior art date
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title description 3
- 238000005245 sintering Methods 0.000 claims abstract description 123
- 239000000843 powder Substances 0.000 claims abstract description 80
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052796 boron Inorganic materials 0.000 claims abstract description 39
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 32
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 26
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical group [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 15
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 13
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- -1 rare earth metal aluminates Chemical class 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000003870 refractory metal Substances 0.000 claims description 11
- 229910052727 yttrium Inorganic materials 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 10
- 239000011575 calcium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- 230000037396 body weight Effects 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 6
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 6
- 150000002910 rare earth metals Chemical class 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 5
- DBNPLCUZNLSUCT-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[Ba] Chemical compound [B].[B].[B].[B].[B].[B].[Ba] DBNPLCUZNLSUCT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000001638 boron Chemical class 0.000 claims description 2
- 229910025794 LaB6 Inorganic materials 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 27
- 239000011230 binding agent Substances 0.000 description 22
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 18
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 16
- 239000000292 calcium oxide Substances 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 12
- 239000010937 tungsten Substances 0.000 description 12
- 229910052582 BN Inorganic materials 0.000 description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 7
- 238000003801 milling Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229920006187 aquazol Polymers 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 3
- 239000008246 gaseous mixture Substances 0.000 description 3
- 229910052747 lanthanoid Inorganic materials 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011819 refractory material Substances 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- DFENVCUUBABVIU-UHFFFAOYSA-N [Ca].[Y] Chemical compound [Ca].[Y] DFENVCUUBABVIU-UHFFFAOYSA-N 0.000 description 1
- DEZWRKUSBYVLAZ-UHFFFAOYSA-N [O-2].[Y+3].[Ca+2] Chemical class [O-2].[Y+3].[Ca+2] DEZWRKUSBYVLAZ-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- 229940009827 aluminum acetate Drugs 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- ZCLVNIZJEKLGFA-UHFFFAOYSA-H bis(4,5-dioxo-1,3,2-dioxalumolan-2-yl) oxalate Chemical compound [Al+3].[Al+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O ZCLVNIZJEKLGFA-UHFFFAOYSA-H 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000021323 fish oil Nutrition 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229940050929 polyethylene glycol 3350 Drugs 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium (III) oxide Inorganic materials [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- VLCLHFYFMCKBRP-UHFFFAOYSA-N tricalcium;diborate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]B([O-])[O-].[O-]B([O-])[O-] VLCLHFYFMCKBRP-UHFFFAOYSA-N 0.000 description 1
- OBROYCQXICMORW-UHFFFAOYSA-N tripropoxyalumane Chemical compound [Al+3].CCC[O-].CCC[O-].CCC[O-] OBROYCQXICMORW-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Definitions
- the invention relates to a sintered body of aluminum nitride (AI N) with high thermal conductivity and a process for preparing the sintered body at a relatively low sintering temperature.
- the invention relates more particularly to ternary sintering aid combinations that enable preparation of the sintered body at temperatures of 1850° Centigrade (°C) or less, preferably 1650°C or less.
- the sintered body is suitable for use in a variety of known applications including integrated circuit substrates, integrated circuit heat sinks and packaging components or multichip module components.
- the sintered body may also be used in structural applications such as crucibles and components of armor.
- AIN is an excellent material having a high thermal conductivity, insulation resistance and a low thermal expansion coefficient among its desirable properties.
- AIN is a covalent bonding compound, it is quite difficult to produce a pure AIN sintered product without using sintering aids or a hot-press sintering method.
- Sintered AIN bodies are typically prepared by heating an admixture of AIN powder and one or more sintering aids to a temperature within a range of from 1500°C to as high as 2100°C in an atmosphere that promotes sintering.
- the sintering aids typically include one or more oxides of alkaline earth metals or oxides of rare earth metals.
- Kasori et al. U.S. Patent No. 4,746,637 use a sintering aid combination of yttrium oxide (Y 2 O 3 ) and calcium oxide (CaO) to sinter AIN powder at a temperature of 1650°C or above.
- sintering aids may be used in place of, or in addition to, the alkaline earth metal oxides and rare earth metal oxides.
- Okuno et al. U.S. Patent No. 4,877,760
- the sintering aids, including optional sintering aids should not exceed 5 parts by weight per 100 parts by weight of AIN.
- JP H03-146471 discloses mixtures of at least one oxide of yttrium, scandium or a lanthanide and at least one of lanthanum hexaboride (LaB 6 ), magnesium hexaboride and calcium hexaboride as sintering aids.
- JP H03- 197366 discloses mixtures of calcium oxide and LaB 6 as sintering aids. These combinations of sintering aids lead to AIN sintered products that show a high thermal conductivity, but prefer a sintering temperature of 1900°C or above. Such temperatures make it necessary to use an expensive high temperature sintering furnace and fittings, such as a setter, capable of use at those temperatures. In addition, such temperatures result in high energy costs.
- JP H04-130064 discloses sintering aids that are mixtures of a boron based compound such as boron nitride, boron carbide, boron oxide or boron fluoride, at least one oxide, carbide, nitride, or boride of titanium, chromium, manganese, iron, cobalt, nickel, copper, zinc, zirconium, molybdenum, cadmium, tin or tungsten and at least one alkaline earth metal oxide or rare earth metal oxide.
- a boron based compound such as boron nitride, boron carbide, boron oxide or boron fluoride
- a first aspect of the invention is a process for producing an aluminum nitride
- AIN sintered product with a high thermal conductivity at a relatively low sintering temperature.
- an AIN powder having a specific surface area in a range of about 3 to 8 m 2 /g, and preferably 4.5 to 7.5 m 2 /g, and an oxygen content between 0.5 and 1.8 wt% , is used.
- Optimum amounts of sintering aids are combined with the AIN powder.
- the sintering aids substantially constitute a combination of three sintering aids (I), (II) and (III).
- Sintering aid (I) is at least one selected from the group consisting of rare earth oxides and rare earth compounds. The rare earth compounds are converted to corresponding rare earth oxides during sintering.
- Sintering aid (I) is incorporated such that an equivalent rare earth oxide amount thereof is in a range of 0.5 to 10 wt%, based on weight of the AIN sintered product.
- Sintering aid (II) is at least one selected from the group consisting of alkaline earth oxides and alkaline earth compounds. The alkaline earth compounds are converted to corresponding alkaline earth oxidesduring sintering.
- Sintering aid (II) is incorporated such that an equivalent rare earth oxide amount thereof is in a range of 0.1 to 5 wt% , based on weight of the AIN sintered product.
- Sintering aid (III) is at least one selected from the group consisting of LaB 6 , NbC, and WB.
- An additive amount of LaB 6 is in a range of 0.05 to 3 wt%, based on weight of the AIN sintered product.
- a resulting mixture is compacted to a desired shape, and then sintered in a non-oxidative atmosphere at a sintering temperature of 1650°C or below to provide a sintered product with a high thermal conductivity of 120 W/m.K or more.
- a second aspect of the invention is a sinterable aluminum nitride powder composition
- a sintering aid combination that consists essentially of a rare earth metal oxide source, an alkaline earth metal oxide source, a boron source selected from the group consisting of aluminum boride, aluminum diboride, calcium boride, yttrium boride, strontium boride, barium boride, cerium boride, praseodymium boride, samarium boride and neodymium boride, and, optionally, a source of aluminum oxide.
- a third aspect of the invention is a sintered aluminum nitride body having a high thermal conductivity and comprising, based upon body weight, from about 90 to about 99.5 weight percent aluminum nitride as a primary phase, from about 0.5 to about 10 weight percent of a secondary phase selected from the group consisting of alkaline earth metal aluminates, rare earth metal aluminates, alkaline earth metal-rare earth metal aluminates, complex alkaline earth metal-rare earth metal oxides and mixtures thereof, and boron at a level of from about 50 to about 5000, preferably from about 50 to about 2000 parts by weight per million parts of body weight, as determined by secondary ion mass spectrometry (SIMS).
- SIMS secondary ion mass spectrometry
- a fourth aspect of the invention is a process for preparing a sintered aluminum nitride body having a high thermal conductivity that comprises heating the sinterable composition of the second aspect to a temperature of from about 1570°C to about 1850°C, preferably from about 1570°C to about 1650°C in a nonoxidizing atmosphere for a period of time sufficient to attain a density of at least 95 percent of theoretical density.
- the sintered aluminum nitride body can be a cofired, multilayer aluminum nitride substrate fabricated by a method comprising:
- the sintering temperature can generally be lowered.
- an AIN powder having a specific surface area within a range of from 10 to 14 m 2 /g is densely sintered at a temperature of 1600°C or below.
- oxygen content of the powder also increases.
- the sintered product has a low thermal conductivity.
- AIN powder made by a conventional carbothermal reduction method has a specific surface area of more than 10 m 2 /g, it also has an oxygen content of more than 1.8 wt% . Therefore, an AIN powder with a low oxygen content should be used for producing the AIN product of the first aspect.
- the AIN powder should also have an optimum surface area in order to be sintered at sintering temperatures of about 1650°C or below, and preferably less than 1625°C. These temperatures are advantageous because a relatively inexpensive ceramic, such as aluminum oxide, can be used for fittings, such as a setter, that are placed in a furnace during sintering. A more expensive ceramic for such fittings is hexagonal boron nitride.
- the relatively low temperatures compared to temperatures of 1800°C or more, lead to energy savings.
- the AIN powder have an oxygen content between 0.5 and 1.8 wt% and a specific surface area in a range of 3 to 8 m 2 /g, more preferably 4.5 to 7.5 m 2 /g, is used for enhancing low temperature sintering thereof and improving thermal conductivity of a resulting AIN sintered product.
- the oxygen content is more than 1.8 wt% , it becomes difficult to produce an AIN sintered product with a high thermal conductivity by sintering at a temperature of about 1650°C or below.
- the powder When the specific surface area of the AIN powder is less than 3 m 2 /g, the powder is not densified sufficiently at a sintering temperature of about 1650°C or below.
- An average particle size of an AIN powder suitable for use in this aspect of the invention is in a range of 0.20 micrometer ( ⁇ m) to 0.46 ⁇ m. It is also preferred that the AIN powder be made by a carbothermal reduction method because AIN powder made by direct nitridation has an unstable aluminum oxide surface layer, so that it is possible to increase the oxygen content of the AIN powder during a process for producing the AIN sintered product.
- Sinterable compositions of the second aspect of the invention are prepared by adding a sintering aid combination to aluminum nitride powder.
- a sinterable composition is heated to a temperature of from 1570°C to about 1850°C, preferably from about 1570°C to about 1650°C in a nonoxidizing atmosphere for a period of time sufficient to yield a sintered aluminum nitride body having a density of at least 95 percent of theoretical density.
- the resulting sintered body contains boron at a level of from about 50 to about 5000, preferably from about 50 to about 2000 parts by weight per million parts of body weight, as determined by SIMS.
- AIN powder suitable for purposes of the invention may be of commercial or technical grade. It should not contain any impurities that would have a significant adverse effect upon desired properties of a resulting sintered product. Although some level of impurities is present in commercial powders, that level should be less than that which produces the aforementioned adverse effect.
- the AIN powder typically has a bound oxygen content of iess than 4 wt% .
- the oxygen content is desirably less than 3 wt% and preferably less than 2 wt% .
- the AIN powder also typically has a surface area, measured by a conventional adsorption method such as that taught by S. Brunauer, P. H. Emmett and E. Teller in Journal of the American Chemical Society, volume 60, page 309 (1938) (hereinafter "BET"), of from 1.5 to 10 square meters per gram (m 2 /g).
- BET Brunauer, P. H. Emmett and E. Teller in Journal of the American Chemical Society, volume 60, page 309 (1938)
- the powder surface area is desirably from 2 to 9 m 2 /g.
- AIN powder meeting these specifications are preferably prepared either by carbothermal reduction of alumina (Al 2 O 3 ) or direct nitridation of aluminum metal. AIN powders may also be prepared by other processes using aluminum alkyls or aluminum halides. Preferred carbothermal AIN powders are available from The Dow Chemical Company under the trade designation XUS 35544 and XUS 35548 or Tokuyama Soda under the trade designations Grade F and Grade H. Mixtures of these and other powders may also be used.
- the sintering aid combination includes at least one alkaline earth metal oxide source, at least one rare earth metal oxide source, at least one boron source
- the sintering aid combination may also include, as an optional component, at least one source of aluminum oxide (Al 2 O 3 ).
- the alkaline earth metal oxide sources and rare earth metal oxide sources include the oxides as well as acetates, carbonates, nitrates, hydrides, phosphates, hydroxides, aluminates, formates, oxalates and sulfates.
- the sources of Al 2 O 3 include Al 2 O 3 itself as well as aluminum acetate, aluminum hydroxide, aluminum butoxide, aluminum ethoxide, aluminum propoxide, aluminum oxalate, aluminum nitrate, aluminum phosphate and aluminum sulfate.
- Sintering aid (I) is at least one of rare earth metal oxides and rare earth metal sources or compounds.
- the rare earth metal sources are converted to their corresponding rare earth metal oxides, rare earth metal aluminates or both during sintering.
- the rare earth metal oxides include yttrium oxide (Y 2 O 3 ), and oxides of elements 57 through 71 of the Periodic Table of the Elements.
- the oxides of said elements are lanthanum (La 2 O 3 ), cerium (Ce 2 O 3 ), praseodymium (Pr 2 O 3 ), neodymium (Nd 2 O 3 ), promethium (Pm 2 O 3 ), samarium (Sm 2 O 3 ), europium (Eu 2 O 3 ), gadolinium (Gd 2 O 3 ), terbium (Tb 2 O 3 ), dysprosium (Dy 2 O 3 ), holmium (Ho 2 O 3 ), erbium (Er 2 O 3 ), thulium (Tm 2 O 3 ), ytterbium (Yb 2 O 3 ), and lutetium (Lu 2 O 3 ).
- La 2 O 3 lanthanum
- Ce 2 O 3 cerium
- Pr 2 O 3 praseodymium
- Nd 2 O 3 neodymium
- promethium Pm 2 O 3
- Sm 2 O 3 sama
- the rare earth metal oxide is desirably Y 2 O 3 , La 2 O 3 , Ce 2 O 2 , Ce 2 O 3 , Dy 2 O 3 or Sm 2 O 3/ preferably La 2 O 3 or Y 2 O 3 .
- the rare earth metal oxide source is desirably present in an amount sufficient to provide an equivalent rare earth metal oxide content within a range of from 0.25 to 10 wt% (0.5 to 10 wt% for the first aspect and 0.25 to 5 wt% for all other aspects of the invention), based upon sinterable composition weight.
- the range is preferably from about 0.7 to about 4, more preferably from about 1 to about 3 wt%, based upon sinterable composition weight.
- Sintering aid (II) is at least one of alkaline earth metal oxides and alkaline earth metal sources or compounds.
- the alkaline earth metal sources are converted to their corresponding alkaline earth metal oxides, alkaline earth metal aluminates or both during sintering.
- the alkaline earth metal oxides are magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO) and strontium oxide (SrO). Although radium is also an alkaline earth metal, its radioactivity removes it from consideration as a suitable source of a sintering aid.
- the alkaline earth metal oxide is preferably CaO.
- Calcium carbonate (CaCO 3 ) is a preferred source of CaO as it is more stable than CaO.
- the alkaline earth metal oxide source is desirably present in an amount sufficient to provide an equivalent alkaline earth metal oxide content within a range of from about 0.2 to 5 wt%, based upon sinterable composition weight.
- the range is quite satisfactory when sintering is conducted in a graphite furnace.
- the greater amount should be at least 0.5 wt%, based upon sinterable composition weight.
- the range is preferably from about 0.25 to about 3, more preferably from about 0.5 to about 2 wt%, based upon sinterable composition weight. If sintering is conducted in a refractory metal furnace, such as a tungsten furnace, a greater amount of alkaline earth metal oxide, especially calcium oxide, is required.
- Sintering aid (III), a source of boron is suitably: tungsten boride (WB); a compound represented as MB 2 where M is a metal selected from magnesium (Mg), aluminum (Al), scandium (Sc), yttrium (Y), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), ruthenium (Ru), osmium (Os), uranium (U) and plutonium (Pu); a compound represented as M 2 B 5 where M is a metal selected from Mo and W; a compound represented as MB 4 where M is a metal selected from Ca, Y, Mo and W; MB 6 where M is a metal selected from Ca, strontium (Sr), barium (Ba),
- Sintering aid (III) is capable of enhancing low temperature sintering of AIN powder and improving thermal conductivity of resulting AIN sintered products.
- sintering aid (III) may be niobium carbide (NbC).
- the source of boron is desirably aluminum boride (AIB 12 ), aluminum diboride (AIB 2 ), calcium boride (CaB 6 ), yttrium boride (YB 6 ), lanthanum hexaboride (LaB 6 ), strontium boride (SrB 6 ), barium hexaboride (BaB ⁇ ), cerium tetraboride (CeB 4 ), cerium hexaboride (CeB 6 ), praseodymium boride (PrB 6 ), samarium boride (SmB 6 ), WB or neodymium boride (NdB 6 ).
- the source of boron is preferably AIB 12 , AIB 2 , WB, LaBe or CaB 6 .
- the source of boron for all aspects of the invention other than the first aspect is desirably present in an amount sufficient to provide an equivalent boron content within a range of from 0.01 to 1 wt%, based upon sinterable composition weight.
- the range is preferably from 0.02 to 0.5, more preferably from 0.04 to 0.3 wt%, based upon sinterable composition weight.
- an optimum amount of LaB 6 is in a range of 0.05 to 3 wt%, based on sintered product weight. As the amount of LaB 6 is increased within the range, the thermal conductivity of the AIN sintered product is remarkably improved.
- an amount of LaB 6 in excess of 3 wt% inhibits sintering.
- an optimum amount of NbC or WB is in a range of 0.05 to 5 wt%, based on sintered product weight. As with LaB 6 , increasing amounts within the range improve thermal conductivity of the AIN sintered product. However, an amount of NbC or WB in excess of 5 wt% inhibits sintering.
- the amount of sintering aid (III) used in the first aspect closely relates to the specific surface area and oxygen content of the AIN powder.
- sintering aid (III) should have a purity of 99.9% or more, and an average particle size of less than 10 ⁇ m for uniformly incorporating the aid into AIN powder.
- Aluminum oxide may be added as a fourth component of the sintering aid combination.
- Preferred sources of Al 2 O 3 include Al 2 O 3 itself and aluminum hydroxide. When added, the source is desirably present in an amount sufficient to provide an equivalent Al 2 O 3 content within a range of from greater than zero wt% to 2 wt%, based upon sinterable composition weight. The range is preferably from greater than zero wt% to 1 wt%, more preferably from greater than zero wt% to 0.5 wt%, based upon sinterable composition weight.
- the sintering aid combination is suitably admixed with AIN powder in an amount of from 0.05 wt% to 10 wt%, based upon sinterable composition weight.
- the amount is desirably from 0.5 wt% to 5 wt% , preferably from 0.5 to 3 wt% , based upon sinterable composition weight.
- Each component of the sintering aid combination suitably has a surface area similar to that of the AIN powder.
- An admixture of AIN powder and the sintering aid(s) may be prepared by conventional procedures such as attrition milling and wet and dry ball milling. Wet ball milling with an appropriate solvent and suitable milling media provides satisfactory results. Milling media, usually in the form of cylinders or balls, should have no significant adverse effect upon admixture components or upon sintered bodies prepared from the admixture.
- a solvent such as ethanol, heptane or another organic liquid may be used.
- a suitable solvent is a blend of ethanol and chlorothene. After milling, the organic liquid may be removed by conventional procedures to yield an admixture suitable for conversion to ceramic greenware. Oven drying and spray drying produce satisfactory results.
- An organic binder may be added during milling of the admixture.
- Suitable binders are well known in the art and typically comprise high molecular weight organic materials that are soluble in organic solvents.
- Illustrative binders include polyethyloxazoline, industrial waxes such as paraffin, highly viscous polyglycols, polymethylmethacrylate and polyvinyl butyral.
- the binder is suitably added to admixture components prior to milling.
- Any well known dispersing aid or dispersant may also be added during milling of the admixture.
- Fish oil is a particularly suitable dispersant.
- Ceramic greenware may be prepared by any one of several conventional procedures such as extrusion, injection molding, die pressing, isostatic pressing, slip casting, roll compaction or forming or tape casting to produce a desired shape. Particularly satisfactory results are obtained by dry pressing an admixture (preferably spray dried) or tape casting a slurry.
- the ceramic greenware is desirably subjected to conditions sufficient to remove the organic binder prior to sintering.
- Binder removal also known as binder burn out, typically occurs by heating the greenware to a temperature that ranges from 50°C to 1000°Cto pyrolyze, or thermally decompose, the binder.
- a suitable time and temperature combination for removing the blend polyethyloxazoline and polyethylene glycol is from 1 to 7 hours at a temperature of from 400 to 800° Centigrade (°C), with four hours at a temperature of 575°C being particularly suitable.
- the temperature and hold time vary depending upon the binder and dimensions of the greenware.
- Thermal decomposition may be carried out at or near ambient pressure or in a vacuum.
- the neutral atmosphere is desirably established with at least one gas selected from nitrogen and a noble gases such as argon.
- the gas is preferably nitrogen.
- binder burn out in the presence of an inert gas such as nitrogen yields a higher residual carbon level than binder burn out in the presence of atmospheric air. Binder burnout in the presence of nitrogen is preferred for purposes of the present invention.
- the procedures include using greenware in the form of sheets, depositing a conventional refractory metal ink or paste on at least one major planar surface of at least one greenware sheet, forming a laminate of a desired number of ceramic green sheets having refractory metal ink deposited thereon, and sintering the laminate to effect sintering of both the ceramic sheets and the refractory metal ink deposited on said sheets.
- the laminate Prior to sintering, the laminate may be subjected to a binder burnout step.
- a suitable refractory metal ink is a tungsten ink (Crystalero, #2003 ink).
- Sintering of the greenware, after binder burnout, occurs in a nonoxidizing atmosphere established by gaseous nitrogen or a source of gaseous nitrogen and is followed by cooling in a vacuum or in a neutral atmosphere like that used for thermal debindering.
- the source of gaseous nitrogen may be gaseous nitrogen, gaseous ammonia, gaseous mixtures of nitrogen and ammonia, gaseous mixtures of nitrogen, ammonia or both with an inert or noble gas such as argon, or gaseous mixtures of nitrogen, ammonia or both with hydrogen and, optionally, an inert or noble gas.
- a favorable sintering atmosphere may be established by placing the greenware into a crucible fabricated from a refractory material, such as boron nitride, aluminum nitride, molybdenum metal or tungsten metal, prior to sintering and cooling.
- the greenware may also be placed on a setter within the crucible.
- the setter is preferably fabricated from the same material as the crucible.
- the refractory material will vary depending upon which type of furnace is used for sintering. Boron nitride and aluminum nitride are preferred refractory materials for a graphite furnace, whereas molybdenum metal or tungsten metal is preferred for a tungsten furnace.
- Sintering desirably occurs at a temperature of from about 1570 to about 1850°C (1650°C or below for the first aspect of the invention).
- the temperature is preferably in a range of 1570°C to 1640°C, more preferably 1570°C to 1625°C.
- the temperature is preferably from about 1570 to about 1650°C, more preferably from about 1600 to about 1650°C.
- the sintering temperature is maintained for a period of time sufficient to attain a density of at least 95, preferably at least 97, percent of theoretical density.
- the period of time is desirably from 0.5 hour to 24 hours, preferably from 2 to 10 hours, and more preferably 6 hours. If the sintering time is less than 0.5 hour, the density wil I be less than 95 percent of theoretical density unless the sintering temperature is raised to 1700°C or higher. Although this may be done, it disregards any economic or physical property advantage resulting from sintering at lower temperatures.
- sintering aids (I), (II) and (III) react with a surface layer of aluminum oxide on the AIN powder to generate a complex oxide with a relatively low melting point.
- the complex oxide is presumably capable of removing oxygen atoms from grain boundaries of the sintered AIN bodies. The removal of oxygen atoms improves thermal conductivity of the sintered AIN bodies.
- Sintered AIN bodies of the invention have a thermal conductivity in excess of 100 watts per meter-Kelvin (W/m.K).
- the thermal conductivity is desirably greater than 120 W/m.K, preferably greater than 140 W/m K and more preferably greater than 150 W/m K.
- Sintered AIN bodies of the invention also have a density of at least 95 percent of theoretical density display color/translucency combinations that range from light cream and translucent to dark gray or even black and opaque. Skilled artisans can attain a desired combination of color and thermal conductivity without undue experimentation.
- Sintered AIN bodies of the invention comprise, based upon body weight, from 90 to 99.5 weight percent aluminum nitride as a primary phase, from 0.5 to 10 weight percent of a secondary phase, and boron at a level of from 50 to 5000, preferably from 50 to 2000 parts by weight per million parts of body weight, as determined by secondary ion mass spectrometry.
- the boron is present as a boron derivative that is a secondary phase or is dispersed throughout the secondary phase(s), or is dispersed on an atomic level within aluminum nitride's crystal lattice or a combination thereof.
- the secondary phase is at least one material selected from yttrium aluminates, calcium-yttrium aluminates, complex calcium-yttrium oxides and mixtures thereof.
- the secondary phase may also include an amount of calcium aiuminate.
- Specific examples of secondary phase materials include AI 2 Y 4 O 9 , AIYO 3 , AI 5 Y 3 O 12 , CaYAIO 4 , CaY 2 O 4 and mixtures thereof.
- the sintering aids are Y 2 O 3 as (I), CaCO 3 as (II) and LaB 6 as (III).
- the amounts of Y 2 O 3 , CaCO 3 and LaB 6 are 2.0 wt%, 0.89 wt% and 0.1 wt%, respectively.
- An equivalent CaO amount of CaCO 3 is 0.5 wt% .
- the mixed powder is compacted under a pressure of 1.5 ton/cm 2 (1361 kilogram (kg)/cm 2 ) with a rubber press to a disc having a diameter of 20 mm and a height of 10 mm.
- the disc is set in a boron nitride setter and sintered for 4 hours at a temperature of 1600°C in a non-oxidizing atmosphere including nitrogen gas to obtain a sintered product.
- Example 1 Repeat Example 1, but use AIN powders, sintering temperatures and sintering aid amounts as shown in Table I to obtain sintered products. Each sintered product is ground and polished to provide an AIN sintered disc having a diameter of 10 mm and a thickness of 3 mm. Each disc is then measured for relative density (% of theoretical density) and thermal conductivity (laser flash method). Results of the measurements are also shown in Table I.
- Example 2 but change at least one of the AIN powder, the sintering temperature and the sintering aids as shown in Table II.
- Table II also shows thermal conductivity measurements for resulting sintered bodies. All sintered bodies have a relative density of greater than 98% except example 37 which has a relative density of 94.0.
- the binder composition is a 35/65 weight ratio blend of polyethyloxazoline and polyethylene glycol 3350 (The Dow Chemical Company).
- the solvent blend is a 50/50 (by volume) blend of ethanol and chlorothene.
- the binder is dissolved in the solvent blend before the AIN, Y 2 O 3 , AIB 2 and CaCO 3 powders are added. Ball milling continues for a period of 4 hours to provide a milled slip. Solids contained in the milled slip are separated from most of the solvent blend using a rotary evaporator. Remaining solvent blend removal occurs via drying under vacuum at a
- the dried powder is dry pressed into greenware using a 7/8 inch (2.2 cm) round die under uniaxial pressure of 15,000 pounds per square inch (psi) (about 103 megapascals (MPa)).
- the binder composition is removed from the greenware in the presence of flowing nitrogen (N 2 BBO). Binder removal employs a heating rate of 90°C/hour up to 575°C, a four hour hold at that temperature and a cooling rate of 3°C/min down to room temperature (25°C).
- the greenware is enclosed in a boron nitride setterthat is placed in a boron nitride crucible to establish a neutral environment.
- the crucible is placed in a graphite furnace (one cubic foot (0.028 cubic meter) capacity, Thermal
- the crucible and its contents are heated, in the presence of nitrogen flowing at a rate of 2 standard cubic feet per hour (scfh) (about 0.057 standard cubic meters per hour (scmh)) using a heating schedule that starts with heating to a temperature of 1200°C at a rate of 25°C/min, held at 1200°C for 30 minutes to ensure conversion of CaCO 3 to CaO), heated to 1625°C at a rate of 10°C/min, held at 1625°C for 6 hours and then cooled at a rate of 25°C/min down to 1000°C.
- the crucible contents, now sintered parts are opaque, gray in color, with a smooth surface finish.
- the sintered parts have a density of 3.20 g/cm 3 (greater than 97% of theoretical density) and a thermal conductivity (laser flash method) of 157 W/m K.
- X-ray diffraction (XRD) analysis of the sintered parts reveals yttrium aluminate (AI 2 Y 4 O 9 ) and calcium-yttrium aluminate (CaYAIO 4 ) as secondary phases.
- Boron K ⁇ X-ray mapping using a microprobe shows a generally uniform distribution of boron containing phases.
- Analytical transmission electron microscopy (ATEM) shows that these phases are boron nitride.
- Example 39 using the formulations shown in Table III.
- the CaO amounts are equivalents resulting from higher amounts of CaCO 3 .
- about 0.9 wt% CaCO 3 results in 0.5 wt% CaO.
- Example 71 shows that a metal refractory furnace may require an added amount of alkaline earth metal oxide in order to obtain performance equivalent to a graphite furnace using a boron nitride crucible.
- Example 71 shows that, at the constant total sintering aid level used in these examples, an excessive amount of AIB 2 relative to other components of the sintering aid composition leads to unacceptably low levels of density and thermal conductivity.
- Example 55 but change the AIN powder and vary the temperature as shown in Table V.
- Examples 74-76 therefore contain 1.875 wt% Y 2 O 3 , 0.625 wt% CaO and 0.25 wt% AIB 2 .
- the AIN powder has a surface area of 3.8 m 2 /g, an oxygen content of 1.35 wt% and a carbon content of 0.09 wt% (experimental powder designated 6419R, The Dow Chemical
- Example 72 but vary the temperature as shown in Table VI and use the AIN powder of Examples 74-76.
- the density and thermal conductivity data are shown in Table VI.
- Tables V and VI show that an increase in AIN surface area improves sinterability as determined by maintaining acceptable density at lower temperatures than those used in Examples 55 and 72.
- the data also show that an increase in oxygen content over that used in Examples 55 and 72 causes a minor decrease in thermal conductivity, but may also contribute to enhanced densification.
- Example 39 Repeat Example 39, but use a different lot of the AIN powder used in Example 39, change the furnace to the tungsten used in Examples 57-73, increase the sintering temperature to 1650°C and, for some examples, add an amount of Al 2 O 3 .
- the AIN powder has a surface area of 3.43 m 2 /g, an oxygen content of 1.16 wt% and a carbon content of 0.07 wt% .
- the component amounts, density and thermal conductivity data are shown in Table VII.
- Table VIII show that a volatile species such as boron enhances sintering of aluminum nitride compositions even when it is not part of the composition, so long as it is present, for example, in a crucible used to sinter the compositions.
- Example 47 but vary the boron source to provide the data in Table IX.
- Examples 47 and 98-102 all contain 2 wt% Y 2 O 3 and 0.5 wt% CaO. Although the weight percent of the various boron sources differs, each source is present in an equivalent molar percentage.
- Table IX show that a variety of boron sources provide satisfactory results in terms of density and thermal conductivity at 1625°C in a graphite furnace.
- Example 39 Repeat Example 39, but change the heating schedule to: heat to a temperature of 1400°C at a rate of 10°C/minute, hold at 1400°C for one hour, heat to 1850°C at a rate of 2.5°C/minute, hold at 1850°C for two hours, and then cool to 1000°C at a rate of 10°C/minute.
- the formulations and resulting thermal conductivity are shown in Table XI.
- Example 39 Prepare a milled slip using the procedure of Example 39 and 300 g AIN powder, 3.35 g CaCO 3 powder 5.62 g Y 2 O 3 powder, 0.45 g AIB 2 powder, 93 g of toluene as the solvent, 33 g of a binder/dispersant (Rohm and Haas Co, ACRYLOIDTM B-72) and 9 g of a plasticizer (Aristech Chemical Company, PX-316). The powders are the same as used in Example 39.
- the milled slip is converted to a cast green tape using conventional doctor blade techniques.
- the green tape is screen printed with a test ink pattern using a tungsten ink (Crystalero, #2003 ink).
- Multilayertest pieces are fabricated by stacking and thermally laminating screen printed green tape pieces under an isostatic pressure of 2000 pounds per square inch (psi) (13.8 megapascals) at a temperature of 70°C. Binder burnout occurs in a flowing nitrogen atmosphere using a heating rate of 90°C/hour up to 750°C, holding at 750°C for four hours and cooling at a rate of 180°C/hour to room temperature (25°C).
- the multilayer test pieces are sintered in the tungsten.furnace used in Examples
- cofired substrates have a density of 3.175 g/cm 3 (96.4 % of theoretical) and a thermal conductivity of 134 W/m K.
- Test circuit patterns resulting from the ink have an electrical resistance that varies from 13 to 26 milliohms/square.
- Example 124 Repeat Example 124, but reduce the amount of AIB 2 powder to 0.30 g.
- the cofired substrates have a density of 3.174 g/cm 3 and a thermal conductivity of 124 W/m.K.
- Test circuit patterns resulting from the ink have an electrical resistance that varies from 13.1 to 13.6 milliohms/square.
- Examples 124 and 125 demonstrate the suitability of sinterable compositions of the invention for use in preparing multilayer, cofired substrate materials.
- the narrow variability of electrical resistance in Example 125 relative to Example 124 suggests that boron source levels should be kept relatively low.
- the level should be at or below 0.15 wt%, based on sintered body weight, for more consistent results. Similar results are expected with other sinterable compositions and AIN powders, both of which are disclosed herein.
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Abstract
An aluminum nitride sintered product with a high thermal conductivity (at least 100 W/m.K) can be prepared at a sintering temperature of less than 1850 °C (often less than 1650 °C) using a sinterable combination of aluminum nitride powder with at least three sintering aids. The sintering aids include a source of a rare earth metal oxide, a source of an alkaline earth metal oxide, a boron source and, optionally, a source of aluminum oxide. The sinterable combinations may also be used to prepare cofired, multilayer substrates.
Description
ALUMINUM NITRIDE SINTERED BODY WITH HIGH THERMAL CONDUCTIVITY AND ITS .
PREPARATION
Background of the Invention
The invention relates to a sintered body of aluminum nitride (AI N) with high thermal conductivity and a process for preparing the sintered body at a relatively low sintering temperature. The invention relates more particularly to ternary sintering aid combinations that enable preparation of the sintered body at temperatures of 1850° Centigrade (°C) or less, preferably 1650°C or less. The sintered body is suitable for use in a variety of known applications including integrated circuit substrates, integrated circuit heat sinks and packaging components or multichip module components. The sintered body may also be used in structural applications such as crucibles and components of armor.
AIN is an excellent material having a high thermal conductivity, insulation resistance and a low thermal expansion coefficient among its desirable properties. However, since AIN is a covalent bonding compound, it is quite difficult to produce a pure AIN sintered product without using sintering aids or a hot-press sintering method.
Sintered AIN bodies are typically prepared by heating an admixture of AIN powder and one or more sintering aids to a temperature within a range of from 1500°C to as high as 2100°C in an atmosphere that promotes sintering. The sintering aids typically include one or more oxides of alkaline earth metals or oxides of rare earth metals. Kasori et al. (U.S. Patent No. 4,746,637) use a sintering aid combination of yttrium oxide (Y2O3) and calcium oxide (CaO) to sinter AIN powder at a temperature of 1650°C or above. Other sintering aids may be used in place of, or in addition to, the alkaline earth metal oxides and rare earth metal oxides. Okuno et al. (U.S. Patent No. 4,877,760) use at least one boride, carbide or nitride of titanium, zirconium, hafnium, vanadium, niobium or tantalum or boride or carbide of chromium, molybdenum or tungsten and, optionally, other sintering additives such as alkaline earth metal oxides and rare earth metal oxides. The sintering aids, including optional sintering aids, should not exceed 5 parts by weight per 100 parts by weight of AIN.
JP H03-146471 discloses mixtures of at least one oxide of yttrium, scandium or a lanthanide and at least one of lanthanum hexaboride (LaB6), magnesium hexaboride and calcium hexaboride as sintering aids. JP H03- 197366 discloses mixtures of calcium oxide and LaB6 as sintering aids. These combinations of sintering aids lead to AIN sintered products that show a high thermal conductivity, but prefer a sintering temperature of 1900°C or above. Such temperatures make it necessary to use an expensive high temperature sintering furnace and fittings, such as a setter, capable of use at those temperatures. In addition, such temperatures result in high energy costs.
JP H04-130064 discloses sintering aids that are mixtures of a boron based compound such as boron nitride, boron carbide, boron oxide or boron fluoride, at least one
oxide, carbide, nitride, or boride of titanium, chromium, manganese, iron, cobalt, nickel, copper, zinc, zirconium, molybdenum, cadmium, tin or tungsten and at least one alkaline earth metal oxide or rare earth metal oxide.
Summary of the Invention
A first aspect of the invention is a process for producing an aluminum nitride
(AIN) sintered product with a high thermal conductivity at a relatively low sintering temperature. For this aspect, an AIN powder having a specific surface area in a range of about 3 to 8 m2/g, and preferably 4.5 to 7.5 m2/g, and an oxygen content between 0.5 and 1.8 wt% , is used. Optimum amounts of sintering aids are combined with the AIN powder. The sintering aids substantially constitute a combination of three sintering aids (I), (II) and (III). Sintering aid (I) is at least one selected from the group consisting of rare earth oxides and rare earth compounds. The rare earth compounds are converted to corresponding rare earth oxides during sintering. Sintering aid (I) is incorporated such that an equivalent rare earth oxide amount thereof is in a range of 0.5 to 10 wt%, based on weight of the AIN sintered product. Sintering aid (II) is at least one selected from the group consisting of alkaline earth oxides and alkaline earth compounds. The alkaline earth compounds are converted to corresponding alkaline earth oxidesduring sintering. Sintering aid (II) is incorporated such that an equivalent rare earth oxide amount thereof is in a range of 0.1 to 5 wt% , based on weight of the AIN sintered product. Sintering aid (III) is at least one selected from the group consisting of LaB6, NbC, and WB. An additive amount of LaB6 is in a range of 0.05 to 3 wt%, based on weight of the AIN sintered product. A resulting mixture is compacted to a desired shape, and then sintered in a non-oxidative atmosphere at a sintering temperature of 1650°C or below to provide a sintered product with a high thermal conductivity of 120 W/m.K or more.
A second aspect of the invention is a sinterable aluminum nitride powder composition comprising aluminum nitride powder and a sintering aid combination that consists essentially of a rare earth metal oxide source, an alkaline earth metal oxide source, a boron source selected from the group consisting of aluminum boride, aluminum diboride, calcium boride, yttrium boride, strontium boride, barium boride, cerium boride, praseodymium boride, samarium boride and neodymium boride, and, optionally, a source of aluminum oxide.
A third aspect of the invention is a sintered aluminum nitride body having a high thermal conductivity and comprising, based upon body weight, from about 90 to about 99.5 weight percent aluminum nitride as a primary phase, from about 0.5 to about 10 weight percent of a secondary phase selected from the group consisting of alkaline earth metal aluminates, rare earth metal aluminates, alkaline earth metal-rare earth metal aluminates, complex alkaline earth metal-rare earth metal oxides and mixtures thereof, and boron at a level of from about 50 to about 5000, preferably from about 50 to about 2000 parts by weight per million parts of body weight, as determined by secondary ion mass spectrometry (SIMS). The alkaline earth metal is preferably calcium and the rare earth metal is preferably yttrium.
A fourth aspect of the invention is a process for preparing a sintered aluminum nitride body having a high thermal conductivity that comprises heating the sinterable composition of the second aspect to a temperature of from about 1570°C to about 1850°C, preferably from about 1570°C to about 1650°C in a nonoxidizing atmosphere for a period of time sufficient to attain a density of at least 95 percent of theoretical density.
In an aspect related to the third and fourth aspects, the sintered aluminum nitride body can be a cofired, multilayer aluminum nitride substrate fabricated by a method comprising:
a. preparing at least two ceramic green sheets from the sinterable composition of second aspect;
b. depositing a desired pattern of a refractory metal ink on at least one major planar surface of at least one ceramic green sheet;
c. preparing a laminate of a desired number of ceramic green sheets having refractory metal ink deposited thereon;
d. heating the laminate under the conditions of the fourth aspect to effect sintering of both the ceramic sheets and the refractory metal ink deposited on said sheets. Description of Preferred Embodiments
In the field of powder metallurgy, it has been already known that as an average particle size of a powder used for obtaining its sintered product decreases, the sintering temperature can generally be lowered. For example, an AIN powder having a specific surface area within a range of from 10 to 14 m2/g is densely sintered at a temperature of 1600°C or below. However, as the AIN powder becomes increasingly fine, that is, the specific surface thereof increases, oxygen content of the powder also increases. When such an AIN powder having a high oxygen content is sintered, the sintered product has a low thermal conductivity. For example, when AIN powder made by a conventional carbothermal reduction method has a specific surface area of more than 10 m2/g, it also has an oxygen content of more than 1.8 wt% . Therefore, an AIN powder with a low oxygen content should be used for producing the AIN product of the first aspect. The AIN powder should also have an optimum surface area in order to be sintered at sintering temperatures of about 1650°C or below, and preferably less than 1625°C. These temperatures are advantageous because a relatively inexpensive ceramic, such as aluminum oxide, can be used for fittings, such as a setter, that are placed in a furnace during sintering. A more expensive ceramic for such fittings is hexagonal boron nitride. The relatively low temperatures, compared to temperatures of 1800°C or more, lead to energy savings.
With regard to the first aspect of the invention, it is preferred that the AIN powder have an oxygen content between 0.5 and 1.8 wt% and a specific surface area in a range of 3 to 8 m2/g, more preferably 4.5 to 7.5 m2/g, is used for enhancing low temperature sintering thereof and improving thermal conductivity of a resulting AIN sintered product. When the oxygen content is more than 1.8 wt% , it becomes difficult to produce an AIN
sintered product with a high thermal conductivity by sintering at a temperature of about 1650°C or below. On the other hand, it is difficult and expensive to produce an AIN powder having an oxygen content less than 0.5 wt%. When the specific surface area of the AIN powder is less than 3 m2/g, the powder is not densified sufficiently at a sintering temperature of about 1650°C or below. An average particle size of an AIN powder suitable for use in this aspect of the invention is in a range of 0.20 micrometer (μm) to 0.46 μm. It is also preferred that the AIN powder be made by a carbothermal reduction method because AIN powder made by direct nitridation has an unstable aluminum oxide surface layer, so that it is possible to increase the oxygen content of the AIN powder during a process for producing the AIN sintered product.
Sinterable compositions of the second aspect of the invention are prepared by adding a sintering aid combination to aluminum nitride powder. A sinterable composition is heated to a temperature of from 1570°C to about 1850°C, preferably from about 1570°C to about 1650°C in a nonoxidizing atmosphere for a period of time sufficient to yield a sintered aluminum nitride body having a density of at least 95 percent of theoretical density. The resulting sintered body contains boron at a level of from about 50 to about 5000, preferably from about 50 to about 2000 parts by weight per million parts of body weight, as determined by SIMS.
AIN powder suitable for purposes of the invention may be of commercial or technical grade. It should not contain any impurities that would have a significant adverse effect upon desired properties of a resulting sintered product. Although some level of impurities is present in commercial powders, that level should be less than that which produces the aforementioned adverse effect.
The AIN powder typically has a bound oxygen content of iess than 4 wt% . The oxygen content is desirably less than 3 wt% and preferably less than 2 wt% .
The AIN powder also typically has a surface area, measured by a conventional adsorption method such as that taught by S. Brunauer, P. H. Emmett and E. Teller in Journal of the American Chemical Society, volume 60, page 309 (1938) (hereinafter "BET"), of from 1.5 to 10 square meters per gram (m2/g). The powder surface area is desirably from 2 to 9 m2/g.
AIN powder meeting these specifications are preferably prepared either by carbothermal reduction of alumina (Al2O3) or direct nitridation of aluminum metal. AIN powders may also be prepared by other processes using aluminum alkyls or aluminum halides. Preferred carbothermal AIN powders are available from The Dow Chemical Company under the trade designation XUS 35544 and XUS 35548 or Tokuyama Soda under the trade designations Grade F and Grade H. Mixtures of these and other powders may also be used.
The sintering aid combination includes at least one alkaline earth metal oxide source, at least one rare earth metal oxide source, at least one boron source The sintering aid combination may also include, as an optional component, at least one source of aluminum oxide (Al2O3). The alkaline earth metal oxide sources and rare earth metal oxide sources
include the oxides as well as acetates, carbonates, nitrates, hydrides, phosphates, hydroxides, aluminates, formates, oxalates and sulfates. The sources of Al2O3 include Al2O3 itself as well as aluminum acetate, aluminum hydroxide, aluminum butoxide, aluminum ethoxide, aluminum propoxide, aluminum oxalate, aluminum nitrate, aluminum phosphate and aluminum sulfate.
Sintering aid (I) is at least one of rare earth metal oxides and rare earth metal sources or compounds. The rare earth metal sources are converted to their corresponding rare earth metal oxides, rare earth metal aluminates or both during sintering. The rare earth metal oxides include yttrium oxide (Y2O3), and oxides of elements 57 through 71 of the Periodic Table of the Elements. The oxides of said elements are lanthanum (La2O3), cerium (Ce2O3), praseodymium (Pr2O3), neodymium (Nd2O3), promethium (Pm2O3), samarium (Sm2O3), europium (Eu2O3), gadolinium (Gd2O3), terbium (Tb2O3), dysprosium (Dy2O3), holmium (Ho2O3), erbium (Er2O3), thulium (Tm2O3), ytterbium (Yb2O3), and lutetium (Lu2O3). The rare earth metal oxide is desirably Y2O3, La2O3, Ce2O2, Ce2O3, Dy2O3 or Sm2O3/ preferably La2O3 or Y2O3. The rare earth metal oxide source is desirably present in an amount sufficient to provide an equivalent rare earth metal oxide content within a range of from 0.25 to 10 wt% (0.5 to 10 wt% for the first aspect and 0.25 to 5 wt% for all other aspects of the invention), based upon sinterable composition weight. The range is preferably from about 0.7 to about 4, more preferably from about 1 to about 3 wt%, based upon sinterable composition weight.
Sintering aid (II) is at least one of alkaline earth metal oxides and alkaline earth metal sources or compounds. The alkaline earth metal sources are converted to their corresponding alkaline earth metal oxides, alkaline earth metal aluminates or both during sintering. The alkaline earth metal oxides are magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO) and strontium oxide (SrO). Although radium is also an alkaline earth metal, its radioactivity removes it from consideration as a suitable source of a sintering aid. The alkaline earth metal oxide is preferably CaO. Calcium carbonate (CaCO3) is a preferred source of CaO as it is more stable than CaO. The alkaline earth metal oxide source is desirably present in an amount sufficient to provide an equivalent alkaline earth metal oxide content within a range of from about 0.2 to 5 wt%, based upon sinterable composition weight. The range is quite satisfactory when sintering is conducted in a graphite furnace. The greater amount should be at least 0.5 wt%, based upon sinterable composition weight. The range is preferably from about 0.25 to about 3, more preferably from about 0.5 to about 2 wt%, based upon sinterable composition weight. If sintering is conducted in a refractory metal furnace, such as a tungsten furnace, a greater amount of alkaline earth metal oxide, especially calcium oxide, is required.
Sintering aid (III), a source of boron, is suitably: tungsten boride (WB); a compound represented as MB2 where M is a metal selected from magnesium (Mg), aluminum (Al), scandium (Sc), yttrium (Y), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium
(Tc), rhenium (Re), ruthenium (Ru), osmium (Os), uranium (U) and plutonium (Pu); a compound represented as M2B5 where M is a metal selected from Mo and W; a compound represented as MB4 where M is a metal selected from Ca, Y, Mo and W; MB6 where M is a metal selected from Ca, strontium (Sr), barium (Ba), Y and Lanthanides; a compound represented as MB12 where M is a metal selected from Al, Sc, Y, Zr, an Actinide or a Lanthanide; a compound represented as MB66 where M is Y; ora boron rich metal oxide such as calcium borate or aluminum borate. Other boron sources should also provide satisfactory results. Sintering aid (III) is capable of enhancing low temperature sintering of AIN powder and improving thermal conductivity of resulting AIN sintered products. For the first aspect of the invention only, sintering aid (III) may be niobium carbide (NbC). The source of boron is desirably aluminum boride (AIB 12), aluminum diboride (AIB2), calcium boride (CaB6), yttrium boride (YB6), lanthanum hexaboride (LaB6), strontium boride (SrB6), barium hexaboride (BaBε), cerium tetraboride (CeB4), cerium hexaboride (CeB6), praseodymium boride (PrB6), samarium boride (SmB6), WB or neodymium boride (NdB6). The source of boron is preferably AIB12, AIB2, WB, LaBe or CaB6. The source of boron for all aspects of the invention other than the first aspect is desirably present in an amount sufficient to provide an equivalent boron content within a range of from 0.01 to 1 wt%, based upon sinterable composition weight. The range is preferably from 0.02 to 0.5, more preferably from 0.04 to 0.3 wt%, based upon sinterable composition weight.
For the first aspect of the invention, an optimum amount of LaB6 is in a range of 0.05 to 3 wt%, based on sintered product weight. As the amount of LaB6 is increased within the range, the thermal conductivity of the AIN sintered product is remarkably improved.
However, an amount of LaB6 in excess of 3 wt% inhibits sintering. Also with respect to the first aspect of the invention, an optimum amount of NbC or WB is in a range of 0.05 to 5 wt%, based on sintered product weight. As with LaB6, increasing amounts within the range improve thermal conductivity of the AIN sintered product. However, an amount of NbC or WB in excess of 5 wt% inhibits sintering. In addition, the amount of sintering aid (III) used in the first aspect closely relates to the specific surface area and oxygen content of the AIN powder. If the AIN powder has a relatively small specific surface area and a low oxygen content, it is expected that a small amount of sintering aid (III) within the range will be sufficient to convert the AIN powder into a sintered product with a high thermal conductivity. On the other hand, using an AIN powder with a relatively large specific surface area and a high oxygen content requires a large amount of sintering aid (III) within the range in order to improve thermal conductivity of the sintered product. For the first aspect of the invention, sintering aid (III) should have a purity of 99.9% or more, and an average particle size of less than 10 μm for uniformly incorporating the aid into AIN powder.
Aluminum oxide (Al2O3) may be added as a fourth component of the sintering aid combination. Preferred sources of Al2O3 include Al2O3 itself and aluminum hydroxide. When added, the source is desirably present in an amount sufficient to provide an equivalent Al2O3
content within a range of from greater than zero wt% to 2 wt%, based upon sinterable composition weight. The range is preferably from greater than zero wt% to 1 wt%, more preferably from greater than zero wt% to 0.5 wt%, based upon sinterable composition weight.
The sintering aid combination is suitably admixed with AIN powder in an amount of from 0.05 wt% to 10 wt%, based upon sinterable composition weight. The amount is desirably from 0.5 wt% to 5 wt% , preferably from 0.5 to 3 wt% , based upon sinterable composition weight. Each component of the sintering aid combination suitably has a surface area similar to that of the AIN powder.
An admixture of AIN powder and the sintering aid(s) may be prepared by conventional procedures such as attrition milling and wet and dry ball milling. Wet ball milling with an appropriate solvent and suitable milling media provides satisfactory results. Milling media, usually in the form of cylinders or balls, should have no significant adverse effect upon admixture components or upon sintered bodies prepared from the admixture. A solvent such as ethanol, heptane or another organic liquid may be used. A suitable solvent is a blend of ethanol and chlorothene. After milling, the organic liquid may be removed by conventional procedures to yield an admixture suitable for conversion to ceramic greenware. Oven drying and spray drying produce satisfactory results.
An organic binder may be added during milling of the admixture. Suitable binders are well known in the art and typically comprise high molecular weight organic materials that are soluble in organic solvents. Illustrative binders include polyethyloxazoline, industrial waxes such as paraffin, highly viscous polyglycols, polymethylmethacrylate and polyvinyl butyral. A blend of polyethyloxazoline in an amount of from 20 to 80, preferably from 35 to 65, wt% and polyethylene glycol in an amount of from 80 to 20, preferably from 65 to 35, wt%, based upon blend weight wherein the amounts total 100 percent, is particularly suitable. The binder is suitably added to admixture components prior to milling.
Any well known dispersing aid or dispersant may also be added during milling of the admixture. Fish oil is a particularly suitable dispersant.
Ceramic greenware may be prepared by any one of several conventional procedures such as extrusion, injection molding, die pressing, isostatic pressing, slip casting, roll compaction or forming or tape casting to produce a desired shape. Particularly satisfactory results are obtained by dry pressing an admixture (preferably spray dried) or tape casting a slurry.
The ceramic greenware is desirably subjected to conditions sufficient to remove the organic binder prior to sintering. Binder removal, also known as binder burn out, typically occurs by heating the greenware to a temperature that ranges from 50°C to 1000°Cto pyrolyze, or thermally decompose, the binder. A suitable time and temperature combination for removing the blend polyethyloxazoline and polyethylene glycol is from 1 to 7 hours at a temperature of from 400 to 800° Centigrade (°C), with four hours at a temperature of 575°C
being particularly suitable. The temperature and hold time vary depending upon the binder and dimensions of the greenware. Thermal decomposition may be carried out at or near ambient pressure or in a vacuum. It may be carried out in the presence of atmospheric air or in a neutral atmosphere. The neutral atmosphere is desirably established with at least one gas selected from nitrogen and a noble gases such as argon. The gas is preferably nitrogen. As a general rule, binder burn out in the presence of an inert gas such as nitrogen yields a higher residual carbon level than binder burn out in the presence of atmospheric air. Binder burnout in the presence of nitrogen is preferred for purposes of the present invention.
Conventional procedures may be used to prepare a cofired multilayer aluminum nitride substrate. The procedures include using greenware in the form of sheets, depositing a conventional refractory metal ink or paste on at least one major planar surface of at least one greenware sheet, forming a laminate of a desired number of ceramic green sheets having refractory metal ink deposited thereon, and sintering the laminate to effect sintering of both the ceramic sheets and the refractory metal ink deposited on said sheets. Prior to sintering, the laminate may be subjected to a binder burnout step. A suitable refractory metal ink is a tungsten ink (Crystalero, #2003 ink).
Sintering of the greenware, after binder burnout, occurs in a nonoxidizing atmosphere established by gaseous nitrogen or a source of gaseous nitrogen and is followed by cooling in a vacuum or in a neutral atmosphere like that used for thermal debindering. The source of gaseous nitrogen may be gaseous nitrogen, gaseous ammonia, gaseous mixtures of nitrogen and ammonia, gaseous mixtures of nitrogen, ammonia or both with an inert or noble gas such as argon, or gaseous mixtures of nitrogen, ammonia or both with hydrogen and, optionally, an inert or noble gas. A favorable sintering atmosphere may be established by placing the greenware into a crucible fabricated from a refractory material, such as boron nitride, aluminum nitride, molybdenum metal or tungsten metal, prior to sintering and cooling. The greenware may also be placed on a setter within the crucible. The setter is preferably fabricated from the same material as the crucible. The refractory material will vary depending upon which type of furnace is used for sintering. Boron nitride and aluminum nitride are preferred refractory materials for a graphite furnace, whereas molybdenum metal or tungsten metal is preferred for a tungsten furnace.
Sintering desirably occurs at a temperature of from about 1570 to about 1850°C (1650°C or below for the first aspect of the invention). In accordance with the first aspect, when using intermediate surface area (4.5 to 7.5 m2/g) AIN powders and LaB6 as sintering aid (III), the temperature is preferably in a range of 1570°C to 1640°C, more preferably 1570°C to 1625°C. For all aspects of the invention and any other sintering aid (III), including WB or NbC suitable for use in the first aspect of the invention, the temperature is preferably from about 1570 to about 1650°C, more preferably from about 1600 to about 1650°C. The sintering temperature is maintained for a period of time sufficient to attain a density of at least 95,
preferably at least 97, percent of theoretical density. The period of time is desirably from 0.5 hour to 24 hours, preferably from 2 to 10 hours, and more preferably 6 hours. If the sintering time is less than 0.5 hour, the density wil I be less than 95 percent of theoretical density unless the sintering temperature is raised to 1700°C or higher. Although this may be done, it disregards any economic or physical property advantage resulting from sintering at lower temperatures.
During sintering, sintering aids (I), (II) and (III) react with a surface layer of aluminum oxide on the AIN powder to generate a complex oxide with a relatively low melting point. The complex oxide is presumably capable of removing oxygen atoms from grain boundaries of the sintered AIN bodies. The removal of oxygen atoms improves thermal conductivity of the sintered AIN bodies.
Sintered AIN bodies of the invention have a thermal conductivity in excess of 100 watts per meter-Kelvin (W/m.K). The thermal conductivity is desirably greater than 120 W/m.K, preferably greater than 140 W/m K and more preferably greater than 150 W/m K. A
theoretical maximum thermal conductivity for single crystal AIN is 319 W/m.K. An upper limit for thermal conductivity istherefore 319 W/m.K. An acceptable upper thermal conductivity limit for many practical applications is 230 W/m.K.
Sintered AIN bodies of the invention also have a density of at least 95 percent of theoretical density display color/translucency combinations that range from light cream and translucent to dark gray or even black and opaque. Skilled artisans can attain a desired combination of color and thermal conductivity without undue experimentation.
Sintered AIN bodies of the invention comprise, based upon body weight, from 90 to 99.5 weight percent aluminum nitride as a primary phase, from 0.5 to 10 weight percent of a secondary phase, and boron at a level of from 50 to 5000, preferably from 50 to 2000 parts by weight per million parts of body weight, as determined by secondary ion mass spectrometry. The boron is present as a boron derivative that is a secondary phase or is dispersed throughout the secondary phase(s), or is dispersed on an atomic level within aluminum nitride's crystal lattice or a combination thereof. The secondary phase is at least one material selected from yttrium aluminates, calcium-yttrium aluminates, complex calcium-yttrium oxides and mixtures thereof. The secondary phase may also include an amount of calcium aiuminate. Specific examples of secondary phase materials include AI2Y4O9, AIYO3, AI5Y3O12, CaYAIO4, CaY2O4 and mixtures thereof.
The following examples are solely for purposes of illustration and are not to be construed, by implication or otherwise, as limiting the scope of the present invention.
Example 1
Ball mill an AIN powder (1.25 wt% oxygen, specific surface area of 5.0 m2/g), sintering aids and isopropyl alcohol as a solvent to prepare a mixed powder. The sintering aids are Y2O3 as (I), CaCO3 as (II) and LaB6 as (III). The amounts of Y2O3, CaCO3 and LaB6 are 2.0
wt%, 0.89 wt% and 0.1 wt%, respectively. An equivalent CaO amount of CaCO3 is 0.5 wt% . The mixed powder is compacted under a pressure of 1.5 ton/cm2 (1361 kilogram (kg)/cm2) with a rubber press to a disc having a diameter of 20 mm and a height of 10 mm. The disc is set in a boron nitride setter and sintered for 4 hours at a temperature of 1600°C in a non-oxidizing atmosphere including nitrogen gas to obtain a sintered product.
Examples 2-25
Repeat Example 1, but use AIN powders, sintering temperatures and sintering aid amounts as shown in Table I to obtain sintered products. Each sintered product is ground and polished to provide an AIN sintered disc having a diameter of 10 mm and a thickness of 3 mm. Each disc is then measured for relative density (% of theoretical density) and thermal conductivity (laser flash method). Results of the measurements are also shown in Table I.
The results in Table I show that a combination of Y2O3, CaO and LaB6 provides acceptable AIN sintered bodies at temperatures as low as 1570°C with AIN powders having a variety of oxygen contents and specific surface areas. Acceptable bodies have a relative density of at least 90% and a thermal conductivity of at least 100 W/m.K. The results also show that while a given sinterable composition may provide unacceptable results in terms of relative density, thermal conductivity or both at a particular temperature, a small increase in temperature produces acceptable results. Examples 17* and 18 as well as 21 * and 22 illustrate this point.
Examples 26-35
Repeat Example 1 , but change at least one of the AIN powder, the sintering temperature and the sintering aids as shown in Table II. Table II also shows thermal conductivity measurements for resulting sintered bodies. All sintered bodies have a relative density of greater than 98% except example 37 which has a relative density of 94.0.
The data in Table II showthat NbC and WB are acceptable substitutes for LaBe. Example 39
Ball mill 100 grams (g) AIN powder (The Dow Chemical Company as XUS 35544, oxygen content of 1.1 ± 0.1 wt%, carbon content of less than 0.08 wt%, both percentages being based on powder weight, and a surface area of 3.2 ± 0.2 m2/g), 2 g Y2O3 powder
(Unocal Molycorp, 99.99% purity), 0.9 g CaCO3 powder (Fisher Scientific), 0.25 g AIB2 (Aldrich Chemical Co., Inc.) and 3.1 g of a binder composition in 60.5 g of a solvent blend. The binder composition is a 35/65 weight ratio blend of polyethyloxazoline and polyethylene glycol 3350 (The Dow Chemical Company). The solvent blend is a 50/50 (by volume) blend of ethanol and chlorothene. The binder is dissolved in the solvent blend before the AIN, Y2O3, AIB2 and CaCO3 powders are added. Ball milling continues for a period of 4 hours to provide a milled slip. Solids contained in the milled slip are separated from most of the solvent blend using a rotary evaporator. Remaining solvent blend removal occurs via drying under vacuum at a
temperature of 60°C for a period of 15 hours. After drying is complete, the solids are crushed and screened through a 60 mesh (250 μm sieve opening) sieve to provide a dried powder.
The dried powder is dry pressed into greenware using a 7/8 inch (2.2 cm) round die under uniaxial pressure of 15,000 pounds per square inch (psi) (about 103 megapascals (MPa)). The binder composition is removed from the greenware in the presence of flowing nitrogen (N2 BBO). Binder removal employs a heating rate of 90°C/hour up to 575°C, a four hour hold at that temperature and a cooling rate of 3°C/min down to room temperature (25°C).
After binder removal is complete, the greenware is enclosed in a boron nitride setterthat is placed in a boron nitride crucible to establish a neutral environment. The crucible is placed in a graphite furnace (one cubic foot (0.028 cubic meter) capacity, Thermal
Technology Model 121212G). The crucible and its contents are heated, in the presence of nitrogen flowing at a rate of 2 standard cubic feet per hour (scfh) (about 0.057 standard cubic meters per hour (scmh)) using a heating schedule that starts with heating to a temperature of 1200°C at a rate of 25°C/min, held at 1200°C for 30 minutes to ensure conversion of CaCO3 to CaO), heated to 1625°C at a rate of 10°C/min, held at 1625°C for 6 hours and then cooled at a rate of 25°C/min down to 1000°C. The crucible contents, now sintered parts, are opaque, gray in color, with a smooth surface finish. The sintered parts have a density of 3.20 g/cm3 (greater than 97% of theoretical density) and a thermal conductivity (laser flash method) of 157 W/m K. X-ray diffraction (XRD) analysis of the sintered parts reveals yttrium aluminate (AI2Y4O9) and calcium-yttrium aluminate (CaYAIO4) as secondary phases. Boron Kα X-ray mapping using a microprobe shows a generally uniform distribution of boron containing phases. Analytical transmission electron microscopy (ATEM) shows that these phases are boron nitride.
Repeating this example, but without the AIB2, leads to a lower density, a lower thermal conductivity, and a secondary phase chemistry that is predominantly AI2Y4O9.
Examples 40-56
Repeat Example 39 using the formulations shown in Table III. The CaO amounts are equivalents resulting from higher amounts of CaCO3. For example, about 0.9 wt% CaCO3 results in 0.5 wt% CaO.
The data in Table III, especially Example 55 and 56* and 41 *, 46 and 47, demonstrate that a ternary sintering aid composition (Y2O3, CaO and AIB2) leads to a combination of density and thermal conductivity that exceeds the combination attainable with similar amounts of a binary sintering aid composition (Y2O3 and CaO). The data also demonstrate that a low rare earth metal oxide content, as in Examples 53 and 54, leads to a lower thermal conductivity than a greater rare earth metal oxide content as in Example 51. Examples 57-73
Repeat Examples 40-56 at a sintering temperature of 1650°C using a tungsten furnace and enclosing the greenware in molybdenum-tungsten setters rather than boron nitride setters. Data similar to that of Table ill are shown in Table IV.
The data in Table IV, especially Example 72 in comparison with Example 73*and Example 58* in comparison with Examples 63 and 64, verify the observation made following Table III in that the ternary sintering aid composition including a boron source provides better results than a binary sintering aid composition lacking a boron source. A comparison of Examples 45, 62*, 63, 68* and 71 * shows that a metal refractory furnace may require an added amount of alkaline earth metal oxide in order to obtain performance equivalent to a graphite furnace using a boron nitride crucible. Example 71 shows that, at the constant total sintering aid level used in these examples, an excessive amount of AIB2 relative to other components of the sintering aid composition leads to unacceptably low levels of density and thermal conductivity.
Examples 74-76
Repeat Example 55, but change the AIN powder and vary the temperature as shown in Table V. Examples 74-76 therefore contain 1.875 wt% Y2O3, 0.625 wt% CaO and 0.25 wt% AIB2. The AIN powder has a surface area of 3.8 m2/g, an oxygen content of 1.35 wt% and a carbon content of 0.09 wt% (experimental powder designated 6419R, The Dow Chemical
Company). The density and thermal conductivity data are shown in Table V.
Examples 77-78
Repeat Example 72, but vary the temperature as shown in Table VI and use the AIN powder of Examples 74-76. The density and thermal conductivity data are shown in Table VI.
The data in Tables V and VI show that an increase in AIN surface area improves sinterability as determined by maintaining acceptable density at lower temperatures than those used in Examples 55 and 72. The data also show that an increase in oxygen content over that used in Examples 55 and 72 causes a minor decrease in thermal conductivity, but may also contribute to enhanced densification.
Examples 79-95
Repeat Example 39, but use a different lot of the AIN powder used in Example 39, change the furnace to the tungsten used in Examples 57-73, increase the sintering temperature to 1650°C and, for some examples, add an amount of Al2O3. The AIN powder has a surface area of 3.43 m2/g, an oxygen content of 1.16 wt% and a carbon content of 0.07 wt% . The component amounts, density and thermal conductivity data are shown in Table VII.
The data in Table VII demonstrate that the sintering aid combination of Y2O3, CaO and AIB2 tolerates higher levels of oxygen without significant adverse effects as measured by either density or thermal conductivity. Substantially higher levels of oxygen that accompany much higher levels of Al2O3 should lead to improvements in density at the expense of decreases in thermal conductivity.
Examples 96-97
Repeat Examples 41 and 56 as, respectively Examples 96 and 97, but sinter in the presence of a green body containing 2 wt% AIB2. Table VIII shows comparative data for Examples 41, 56, 96and97.
The data in Table VIII show that a volatile species such as boron enhances sintering of aluminum nitride compositions even when it is not part of the composition, so long as it is present, for example, in a crucible used to sinter the compositions.
Examples 98-102
Repeat Example 47, but vary the boron source to provide the data in Table IX.
Examples 47 and 98-102 all contain 2 wt% Y2O3 and 0.5 wt% CaO. Although the weight percent of the various boron sources differs, each source is present in an equivalent molar percentage.
The data in Table IX show that a variety of boron sources provide satisfactory results in terms of density and thermal conductivity at 1625°C in a graphite furnace.
Examples 103-108
Repeat Examples 47, 98-102, but change the sintering temperature to 1600°C to provide the data in Table X.
105, when compared to that of Examples 103, 104 and 106-108 simply show that some boron sources provide enhanced performance over other boron sources. Grinding YB6 may provide better dispersion ofthe boron source and lead to improved results comparable to those of the other examples.
Examples 109-123
Repeat Example 39, but change the heating schedule to: heat to a temperature of 1400°C at a rate of 10°C/minute, hold at 1400°C for one hour, heat to 1850°C at a rate of 2.5°C/minute, hold at 1850°C for two hours, and then cool to 1000°C at a rate of 10°C/minute. The formulations and resulting thermal conductivity are shown in Table XI.
Y2O3-CaO-AIB2 (Examples 110,1 11 , 121 and 123) and four component sintering aid
combination of Y2O3-CaO-AIB2-AI2O3 (Examples 1 12-120 and 122), when used in sintering sinterable AIN compositions at temperatures as high as 1850°C, yield thermal conductivities that are statistically equivalent to that provided by a standard sinterable AIN composition using only 3 g Y2O3 at the same temperature (Example 109*). When sintered under equivalent conditions, authors writing in open literature would predict that addition of CaO, AI2O3 or both to Y2O3 would yield thermal conductivities below that provided by Y2O3 as a sole sintering aid. The data in Table XI show that the presence of a small amount of a boron source as a sintering aid counters this prediction. Similar results are expected with other alkaline earth metal sources, rare earth metal sources, boron sources and aluminum oxide sources.
Example 124
Prepare a milled slip using the procedure of Example 39 and 300 g AIN powder, 3.35 g CaCO3 powder 5.62 g Y2O3 powder, 0.45 g AIB2 powder, 93 g of toluene as the solvent,
33 g of a binder/dispersant (Rohm and Haas Co, ACRYLOID™ B-72) and 9 g of a plasticizer (Aristech Chemical Company, PX-316). The powders are the same as used in Example 39. The milled slip is converted to a cast green tape using conventional doctor blade techniques. The green tape is screen printed with a test ink pattern using a tungsten ink (Crystalero, #2003 ink). Multilayertest pieces are fabricated by stacking and thermally laminating screen printed green tape pieces under an isostatic pressure of 2000 pounds per square inch (psi) (13.8 megapascals) at a temperature of 70°C. Binder burnout occurs in a flowing nitrogen atmosphere using a heating rate of 90°C/hour up to 750°C, holding at 750°C for four hours and cooling at a rate of 180°C/hour to room temperature (25°C).
The multilayer test pieces are sintered in the tungsten.furnace used in Examples
57-73 using the same sintering conditions as in Examples 57-73 to produce cofired (also known as cosintered) substrates. The cofired substrates have a density of 3.175 g/cm3 (96.4 % of theoretical) and a thermal conductivity of 134 W/m K. Test circuit patterns resulting from the ink have an electrical resistance that varies from 13 to 26 milliohms/square.
Example 125
Repeat Example 124, but reduce the amount of AIB2 powder to 0.30 g. The cofired substrates have a density of 3.174 g/cm3 and a thermal conductivity of 124 W/m.K. Test circuit patterns resulting from the ink have an electrical resistance that varies from 13.1 to 13.6 milliohms/square.
Examples 124 and 125 demonstrate the suitability of sinterable compositions of the invention for use in preparing multilayer, cofired substrate materials. The narrow variability of electrical resistance in Example 125 relative to Example 124 suggests that boron source levels should be kept relatively low. By way of illustration, when using AIB2 as the boron source, the level should be at or below 0.15 wt%, based on sintered body weight, for more consistent results. Similar results are expected with other sinterable compositions and AIN powders, both of which are disclosed herein.
Claims
1. A sinterable aluminum nitride powder composition comprising aluminum nitride powder and a sintering aid combination that consists essentially of a rare earth metal oxide source, an alkaline earth metal oxide source, a boron source, and, optionally, a source of aluminum oxide.
2. A sinterable aluminum nitride powder composition comprising aluminum nitride powder and a sintering aid combination that consists essentially of a rare earth metal oxide source, an alkaline earth metal oxide source, a boron source selected from the group consisting of aluminum boride, aluminum diboride, calcium boride, yttrium boride, strontium boride, barium boride, cerium boride, praseodymium boride, samarium boride and neodymium boride, and, optionally, a source of aluminum oxide.
3. A powder composition as claimed in Claim 1 or Claim 2, whereinthe alkaline earth metal oxide source is present in an amount sufficient to provide an equivalent alkaline earth metal oxide content within a range of from 0.2 to 5 percent by weight, the rare earth metal oxide source is present in an amount sufficient to provide an equivalent rare earth metal oxide content within a range of from 0.25 to 5 percent by weight, and the source of boron is present in an amount sufficient to provide an equivalent boron content within a range of from 0.01 to 1 percent by weight, all percentages being based upon sinterable composition weight.
4. A powder composition as claimed in Claim 3, wherein the equivalent alkaline earth metal oxide content is within a range of from 0.5 to 5 percent by weight when the composition is to be sintered in a metal refractory furnace.
5. A powder composition as claimed in Claim 3, whereirrthe sintering aid combination includes a source of alumina in an amount sufficient to provide an equivalent alumina content within a range of from greater than zero percent by weight to 2 percent by weight, based upon sinterable composition weight.
6. A powder composition as claimed in Claim 5, wherein the sintering aid combination is present in an amount of from 0.5 to 10 percent by weight, based upon sinterable composition weight.
7. A powder composition as claimed in Claim 6, wherein the rare earth metal oxide source is yttrium oxide, the alkaline earth metal oxide source is calcium carbonate and the boron source is aluminum diboride or aluminum boride.
8. A sintered aluminum nitride body having a high thermal conductivity and comprising, based upon body weight, from 90 to 99.5 percent by weight aluminum nitride as a primary phase, from 0.5 to 10 percent by weight of a secondary phase selected from the group consisting of rare earth metal aluminates, alkaline earth metal-rare earth metal aluminates, complex alkaline earth metal-rare earth metal oxides and mixtures thereof, optionally with an alkaline earth metal aluminate, and boron at a level of from 50 to 5000 parts by weight per million parts of body weight, as determined by secondary ion mass spectrometry.
9. A sintered aluminum nitride body as claimed in Claim 8, wherein the rare earth metal is yttrium and the alkaline earth metal is calcium.
10. A sintered aluminum nitride body as claimed in Claim 8, wherein the boron is present as a boron derivative that is a secondary phase or is dispersed throughout the secondary phase(s), or is dispersed on an atomic level within aluminum nitride's crystal lattice or a combination thereof.
11. The sintered aluminum nitride body as claimed in any of Claims 8-10, wherein the secondary phase is at least one of AI2Y4O9, AIYO3, Al5Y3O12, CaYAlO4 and CaY2O4.
12. The sintered aluminum nitride body as claimed in Claim 1 1 , wherein the body has a density of at least 95 percent of theoretical density.
13. The sintered aluminum nitride body as claimed in Claim 12, wherein the thermal conductivity is from 100 to 230 W/m.K.
14. A process for preparing a sintered aluminum nitride body having a high thermal conductivity that comprises heating a sinterable composition to a temperature of from 1570°C to 1850°C in a nonoxidizing atmosphere for a period of time sufficient to attain a density of at least 95 percent of theoretical density, the sinterable composition comprising aluminum nitride in an amount of from 90 to 99.5 percent by weight of composition and from 0.5 to 10 percent by weight of composition of a sintering aid combination that consists essentially of a rare earth metal oxide source, an alkaline earth metal oxide source and a boron source selected from the group consisting of aluminum boride, aluminum diboride, calcium boride, yttrium boride, strontium boride, barium boride, cerium boride, praseodymium boride, samarium boride and neodymium boride, and, optionally, a source of aluminum oxide.
15. A process as claimed in Claim 14, wherein the temperature is from 1570°C to 1650°C.
16. A process as claimed in Claim 14 or Claim 15, wherein the sinterable composition comprises from 95 to 99.5 percent by weight of aluminum nitride and from 0.5 to 5 percent by weight of the sintering aid combination, both percentages being based upon sinterable composition weight and totaling 100 percent by weight.
17. A process as claimed in Claim 16, wherein the alkaline earth metal oxide source is present in an amount sufficient to provide an equivalent alkaline earth metal oxide content within a range of from 0.2 to 5 percent by weight, the rare earth metal oxide source is present in an amount sufficient to provide an equivalent rare earth metal oxide content within a range of from 0.25 to 5 percent by weight, and the source of boron is present in an amount sufficient to provide an equivalent boron content within a range of from 0.01 to 1 percent by weight, all percentages being based upon sinterable composition weight.
18. A process as claimed in Claim 17, wherein the sintering aid combination includes a source of aluminum oxide in an amount sufficient to provide an equivalent aluminum oxide content within a range of from greater than zero percent by weight to 2 percent by weight, based upon sinterable composition weight.
19. The process of Claim 14, wherein the sintered body has a thermal conductivity of from 100 to 230 W/m.K.
20. In a process for producing an aluminum nitride sintered product, which comprises the steps of adding sintering aids to AIN powder, compacting a resulting mixture and then sintering the compacted mixture at a sintering temperature in a non-oxidizing atmosphere;
said aluminum nitride powder having a specific surface area in a range of about 3 to 8 square meters per gram and an oxygen content between 0.5 and 1.8 percent by weight;
said sintering aids including:
a first sintering aid including at least one selected from the group consisting of rare earth oxides and rare earth compounds which are compounded to corresponding rare earth oxides by said sintering, said first sintering aid being incorporated such that an equivalent rare earth oxide amount thereof is i n a range of 0.5 to 10 percent by weight in relation to the aluminum nitride sintered product;
a second sintering aid including at least one selected from the group consisting of alkaline earth oxides and alkaline earth compounds which are compounded to corresponding alkaline earth oxides by said sintering, said first sintering aid being incorporated such that an equivalent alkaline earth oxide amount thereof is in a range of 0.5 to 10 percent by weight in relation to the aluminum nitride sintered product; and
a third sintering aid including at least one selected from the group consisting of LaB6, NbC, and WB, an additive amount of LaB6 being in a range of 0.05 to 3 percent by weight of the aluminum nitride sintered product, additive amounts of WB and NbC being respectively in a range of 0.05 to 5 percent by weight of the aluminum nitride sintered product.
21. A process as claimed in Claim 20, wherein the sintering temperature is 1650°C or less.
22. A process as claimed in Claim 20 or Claim 21, wherein the specific surface area of the aluminum nitride powder is in a range of 4.5 to 7.5 square meters per gram.
23. A method of preparing a cofired, multilayer aluminum nitride substrate, the method comprising:
a. preparing at least two ceramic green sheets from the sinterable composition of Claim 1 ;
b. depositing a desired pattern of a refractory metal ink on at least one major planar surface of at least one ceramic green sheet;
c. preparing a laminate of a desired number of ceramic green sheets having refractory metal ink deposited thereon; d. heating the laminate in a non-oxidizing atmosphere, at atmospheric pressure and at a temperature of from 1570 to 1850°C to effect sintering of both the ceramic sheets and the refractory metal ink deposited on said sheets.
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190790B1 (en) * | 1998-02-23 | 2001-02-20 | Murata Manufacturing Co., Ltd. | Resistor material, resistive paste and resistor using the resistor material, and multi-layered ceramic substrate |
CN112811910A (en) * | 2021-03-26 | 2021-05-18 | 无锡海古德新技术有限公司 | Aluminum nitride-based functional ceramic material and preparation method thereof |
CN112830795A (en) * | 2019-11-22 | 2021-05-25 | 福建臻璟新材料科技有限公司 | Preparation process for preparing aluminum nitride blank by using water-based gel system |
CN112830794A (en) * | 2019-11-22 | 2021-05-25 | 福建臻璟新材料科技有限公司 | Preparation process for preparing high-thermal-conductivity and high-strength aluminum nitride ceramic by organic monomer gel method |
CN113480317A (en) * | 2021-07-05 | 2021-10-08 | 哈尔滨理工大学 | Preparation method of high-thermal-conductivity AlN ceramic by low-temperature sintering |
WO2022100249A1 (en) * | 2020-11-12 | 2022-05-19 | 广东工业大学 | Slurry and preparation method for high-performance aluminum nitride ceramic substrate |
CN115504793A (en) * | 2022-10-18 | 2022-12-23 | 福建华清电子材料科技有限公司 | Preparation method of high-thermal-conductivity aluminum nitride ceramic |
CN115974012A (en) * | 2022-12-30 | 2023-04-18 | 雅安百图高新材料股份有限公司 | Aluminum nitride powder and preparation process thereof |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190790B1 (en) * | 1998-02-23 | 2001-02-20 | Murata Manufacturing Co., Ltd. | Resistor material, resistive paste and resistor using the resistor material, and multi-layered ceramic substrate |
CN112830795A (en) * | 2019-11-22 | 2021-05-25 | 福建臻璟新材料科技有限公司 | Preparation process for preparing aluminum nitride blank by using water-based gel system |
CN112830794A (en) * | 2019-11-22 | 2021-05-25 | 福建臻璟新材料科技有限公司 | Preparation process for preparing high-thermal-conductivity and high-strength aluminum nitride ceramic by organic monomer gel method |
WO2022100249A1 (en) * | 2020-11-12 | 2022-05-19 | 广东工业大学 | Slurry and preparation method for high-performance aluminum nitride ceramic substrate |
CN112811910A (en) * | 2021-03-26 | 2021-05-18 | 无锡海古德新技术有限公司 | Aluminum nitride-based functional ceramic material and preparation method thereof |
CN113480317A (en) * | 2021-07-05 | 2021-10-08 | 哈尔滨理工大学 | Preparation method of high-thermal-conductivity AlN ceramic by low-temperature sintering |
CN115504793A (en) * | 2022-10-18 | 2022-12-23 | 福建华清电子材料科技有限公司 | Preparation method of high-thermal-conductivity aluminum nitride ceramic |
CN115504793B (en) * | 2022-10-18 | 2023-07-28 | 福建华清电子材料科技有限公司 | Preparation method of high-heat-conductivity aluminum nitride ceramic |
CN115974012A (en) * | 2022-12-30 | 2023-04-18 | 雅安百图高新材料股份有限公司 | Aluminum nitride powder and preparation process thereof |
Also Published As
Publication number | Publication date |
---|---|
AU7014894A (en) | 1995-02-13 |
CA2171548A1 (en) | 1995-01-26 |
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