WO1994019814A1 - Improvements in composite electrical contacts - Google Patents
Improvements in composite electrical contacts Download PDFInfo
- Publication number
- WO1994019814A1 WO1994019814A1 PCT/GB1994/000305 GB9400305W WO9419814A1 WO 1994019814 A1 WO1994019814 A1 WO 1994019814A1 GB 9400305 W GB9400305 W GB 9400305W WO 9419814 A1 WO9419814 A1 WO 9419814A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- tungsten
- composite electrical
- electrical contact
- contact according
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 28
- 229910052802 copper Inorganic materials 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 28
- 229910052721 tungsten Inorganic materials 0.000 claims description 25
- 239000010937 tungsten Substances 0.000 claims description 25
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
- H01H11/04—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
- H01H11/041—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by bonding of a contact marking face to a contact body portion
- H01H11/045—Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by bonding of a contact marking face to a contact body portion with the help of an intermediate layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
Definitions
- This invention relates to composite electrical contacts.
- Arc-erosion is clearly the main cause of damage to rotary ignition switches and only occurs on the outer contacts, mainly when the rotor arm traverses the air gap in the outer conductive track and experiences a change in electrical potential in crossing the gap.
- Plastic deformation and abrasive wear also play a role in producing material loss and a mixture of two body, particularly in the case of the inner contacts, and three body abrasion does occur, which is accelerated by removal of contact grease from the conductive tracks during operation.
- Coatings for electrical connectors and switches have traditionally been produced by roll cladding or electro-plating.
- a composite electrical contact comprises a substrate having co-deposited and multi-layer alloy coatings.
- Co-deposited and multi-layer alloy coatings may be deposited by the following two technigues, namely, co-deposition or sequential deposition from two or more unbalanced, or balanced, magnetron cathode arrays.
- Examples of materials which may be used for electrical applications include combinations of materials such as copper and tungsten co-deposited to form a metastable supersaturated alloy, or multi-layered in alternating copper and tungsten layers with multi-layer periods of, for example, 25 nm.
- Other examples of material combinations may include silver and tungsten, copper or silver with molybdenum, copper or silver with chromium, copper with palladium, copper or silver with graphite, copper with cobalt, silver with nickel or nickel and magnesium oxide, or other, generally insoluble, metallic based combinations.
- the preferred coating materials comprise substantially pure tungsten and copper-tungsten alloy containing less than 10% tungsten in supersaturated solid solution.
- the contact resistance and hardness of these films are superior to a commercial sintered copper-tungsten electrode material (78% ) and the cooper-iron strip currently used in service.
- the copper-tungsten multilayers deposited have significantly lower contact resistance values, but the hardness values obtained unexpectedly indicate that they have inferior wear resistance compared to the tungsten and copper-tungsten co-deposited films. A small increase in hardness occurrs as the multilayer period decreases from lOOnm to 25nm.
- an interface layer between the coating and substrate may improve the adhesion and may be a pre-requisite for successful application in some cases.
- Additional application examples include the coating of butting type electrical contacts and electrical connectors.
- PVD Physical Vapour Deposition
- PVD coatings i.e. high surface hardness, improved arc erosion and wear resistance etc. may be enhanced by depositing the multi-layered coating structure.
- the properties obtained are superior to either of the individual constituents of the multi-layer, but only if the thickness of the individual layers is of the order of a few nanometres.
- Figure 2 illustrates unbalanced magnetrons magnetic field configuration.
- Multilayer coatings can be deposited by sequential deposition from two (or more) unbalanced or balanced magnetron cathode arrays.
- the following example describes the deposition of tungsten/copper multilayer coatings.
- Copper - tungsten multilayers were deposited on a range of substrates.
- the depositions were carried out in a Nordiko NS2550 sputtering unit pumped by a CTI
- the Nordiko sputtering unit is particularly versatile, housing three eight inch diameter magnetron sputtering electrodes.
- D.C. or R.F. bias may be applied to the working electrode using a k Advanced Energy power supply or an ENI Power Systems Inc. model ACG-10 1.25k supply respectively.
- a second 1.25kW RF power supply allows RF biasing of the substrate platten.
- the unit also houses a Chell Instruments MKS 2 gas flow control system and has a fully programmable process controller.
- the substrates used included electrical grade copper (99.5%), cold rolled CuFe2, glass microscope slides, aluminium and stainless steel substrates. All the metallic substrates were polished to a 1 ⁇ m finish prior to the deposition of the thin films.
- Substrates were ultrasonically cleaned in toluene for 30 minutes, then acetone for 15 minutes, then methanol for 15 minutes and finally dried, using a hot air blower.
- Coating was carried out for a duration estimated to give a film thickness of about 3 ⁇ m using the appropriate magnetron sputter power, sample height, argon pressure and sputter pre-clean conditions. Coatings were deposited with layer thicknesses of either 25, 50, or 100 nm. The copper and tungsten layers were of equal thickness for each coating.
- the deposition parameters were chosen from the following:
- Magnetron - substrate separation 65 or 125 mm (A 100 RF substrate bias pre-clean for up to 10 minutes was used prior to coating)
- Supersaturated coatings can be produced by co-deposition from 2 (or more) unbalanced or balanced magnetron cathode arrays.
- Copper-tungsten supersaturated coatings were deposited on a range of substrates.
- the coatings were deposited using two 6 inch diameter unbalanced DC magnetrons manufactured by D G Teer Coating Services Ltd.
- the substrates used included electrical grade copper strip, discs and wear test pins.
- Coatings were co-deposited from the two magnetrons such that copper-rich films were formed over the copper target and tungsten-rich films were formed over the tungsten target.
- the position of the substrate relative to the two magnetron target therefore determined the copper and tungsten content of the coating so formed.
- a range of copper-tungsten films were deposited with a weight percentage of tungsten from 3.7% to 95.8%.
- the coating thicknesses ranged from 14.5 ⁇ m to 58 ⁇ m were deposited, however, free-standing material (up to about a millimetre in thickness) can be formed by this process.
- the deposition parameters were chosen from the following:
- Substrate bias either applied -100V 0.44A or self bias -21.5V
- Magnetron-substrate separation i) either (for substrade applied bias) 180mm ii) or (for substrate self bias) 100mm
- the source of the high energy ions is usually a simple DC plasma glow discharge for which argon gas at
- a pressure of approximately 10 mbar is fed into the vacuum system.
- the source material or 'target' is made the cathode of the device and large numbers of positive argon ions bombard the target ejecting the metal atoms.
- Compounds, particularly insulators, can also be deposited by reactive sputtering whereby a reactive gas is introduced along with the argon to react with the sputtered target material.
- Magnetron sputtering involves the introduction of a magnetic field close to the target which causes the emitted electrons to spiral down the magnetic field lines so encapsulating electron travel and, therefore, concentrating and enhancing ionisation of argon atoms.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A composite electrical contact comprises a substrate having co-deposited alloy and multi-layer coatings.
Description
IMPROVEMENTS IN COMPOSITE ELECTRICAL CONTACTS
This invention relates to composite electrical contacts.
As the number of switching contacts in motor vehicles has increased, so too have the demands placed upon the contact materials. As a result of this, establishing the mechanisms of degradation of automotive switching contacts is now the subject of much work.
Arc-erosion is clearly the main cause of damage to rotary ignition switches and only occurs on the outer contacts, mainly when the rotor arm traverses the air gap in the outer conductive track and experiences a change in electrical potential in crossing the gap. Plastic deformation and abrasive wear also play a role in producing material loss and a mixture of two body, particularly in the case of the inner contacts, and three body abrasion does occur, which is accelerated by removal of contact grease from the conductive tracks during operation.
Coatings for electrical connectors and switches have traditionally been produced by roll cladding or electro-plating.
It is already known to make a composite electrical contact by spray atomising or sputtering particulate alternate layers of tungsten and copper onto a brass substrate for wire feeds, in such a way that at least
2 1000 particles/mm are deposited.
According to our invention a composite electrical contact comprises a substrate having co-deposited and multi-layer alloy coatings.
By this method we improve the wear resistance, micro-hardness and arc-erosion properties of moving and fixed electrical contacts, with minimal effect on electrical resistance properties. These improved properties minimise the dependency on greases for lubrication and arc-erosion prevention.
Co-deposited and multi-layer alloy coatings may be deposited by the following two technigues, namely, co-deposition or sequential deposition from two or more unbalanced, or balanced, magnetron cathode arrays.
Examples of materials which may be used for electrical applications include combinations of materials such as copper and tungsten co-deposited to form a metastable supersaturated alloy, or multi-layered in alternating copper and tungsten layers with multi-layer periods of, for example, 25 nm. Other examples of material combinations may include silver and tungsten, copper or silver with molybdenum, copper or silver with chromium, copper with palladium, copper or silver with graphite, copper with cobalt, silver with nickel or nickel and magnesium oxide, or other, generally insoluble, metallic based combinations.
The preferred coating materials comprise substantially pure tungsten and copper-tungsten alloy containing less than 10% tungsten in supersaturated solid solution. The contact resistance and hardness of these films are superior to a commercial sintered copper-tungsten electrode material (78% ) and the cooper-iron strip currently used in service.
The copper-tungsten multilayers deposited have significantly lower contact resistance values, but the hardness values obtained unexpectedly indicate that they have inferior wear resistance compared to the tungsten and copper-tungsten co-deposited films. A small increase in hardness occurrs as the multilayer period decreases from lOOnm to 25nm.
For some coating materials and substrate material combinations an interface layer between the coating and substrate may improve the adhesion and may be a pre-requisite for successful application in some cases.
Additional application examples include the coating of butting type electrical contacts and electrical connectors.
Supersaturated Physical Vapour Deposition (PVD) coatings of two or more insoluble metals have been shown to have novel physical properties. Multi-layer PVD coatings have been shown to offer improvements in performance over their single layer constituent counterparts.
The benefits derived from PVD coatings, i.e. high surface hardness, improved arc erosion and wear resistance etc. may be enhanced by depositing the multi-layered coating structure. The properties obtained are superior to either of the individual constituents of the multi-layer, but only if the thickness of the individual layers is of the order of a few nanometres.
Two deposition processes are illustrated in the accompanying drawings in which:-
Figure 1 is a schematic representation of sputter deposition; and
Figure 2 illustrates unbalanced magnetrons magnetic field configuration.
The deposition processes for the multilayer and the supersaturated coating are described with examples.
The Multilayer Coatings
Multilayer coatings can be deposited by sequential deposition from two (or more) unbalanced or balanced magnetron cathode arrays. The following example describes the deposition of tungsten/copper multilayer coatings.
Multilayer Coating Experimental Procedures
Deposition Eguipment
Copper - tungsten multilayers were deposited on a range of substrates. The depositions were carried out in a Nordiko NS2550 sputtering unit pumped by a CTI
Cryogenics Cryo - Torr 8 cryo pump/rotary vane pump
(Edwards E2M40) combination with an ultimate vacuum of
_7 1 x 10 mbar.
The Nordiko sputtering unit is particularly versatile, housing three eight inch diameter magnetron sputtering electrodes. D.C. or R.F. bias may be applied to the working electrode using a k Advanced Energy power supply or an ENI Power Systems Inc. model ACG-10 1.25k supply respectively. A second 1.25kW RF power supply allows RF biasing of the substrate platten. The unit also houses a Chell Instruments MKS
2 gas flow control system and has a fully programmable process controller.
Materials
For the purpose of this investigation 20mm diameter by 6mm thickness copper and tungsten targets of 99.5% and 99.95% purity respectively were used. The substrates used included electrical grade copper (99.5%), cold rolled CuFe2, glass microscope slides, aluminium and stainless steel substrates. All the metallic substrates were polished to a 1 μm finish prior to the deposition of the thin films.
Substrate Preparation
Substrates were ultrasonically cleaned in toluene for 30 minutes, then acetone for 15 minutes, then methanol for 15 minutes and finally dried, using a hot air blower.
Deposition Process
Coating was carried out for a duration estimated to give a film thickness of about 3 μm using the appropriate magnetron sputter power, sample height, argon pressure and sputter pre-clean conditions. Coatings were deposited with layer thicknesses of either 25, 50, or 100 nm. The copper and tungsten layers were of equal thickness for each coating.
The deposition parameters were chosen from the following:
Magnetron power 1 or 2 kW DC
Substrate bias 100 RF
Magnetron - substrate separation 65 or 125 mm
(A 100 RF substrate bias pre-clean for up to 10 minutes was used prior to coating)
The Supersaturated Coatings
Supersaturated coatings can be produced by co-deposition from 2 (or more) unbalanced or balanced magnetron cathode arrays.
The following example describes the deposition of cooper-tungsten supersaturated coatings.
Supersaturated Coating Experimental Procedures
Deposition Equipment
Copper-tungsten supersaturated coatings were deposited on a range of substrates. The coatings were deposited using two 6 inch diameter unbalanced DC magnetrons manufactured by D G Teer Coating Services Ltd.
Materials
For the purpose of this investigation 6 inch diameter copper and tungsten targets. The substrates used included electrical grade copper strip, discs and wear test pins.
Deposition Process
Coatings were co-deposited from the two magnetrons such that copper-rich films were formed over the copper target and tungsten-rich films were formed over the tungsten target. The position of the substrate relative to the two magnetron target therefore
determined the copper and tungsten content of the coating so formed.
A range of copper-tungsten films were deposited with a weight percentage of tungsten from 3.7% to 95.8%. The coating thicknesses ranged from 14.5 μm to 58 μm were deposited, however, free-standing material (up to about a millimetre in thickness) can be formed by this process.
The deposition parameters were chosen from the following:
Magnetron power: Copper targer 3kW
Tungsten target 3 to 2.5kW
Substrate bias: either applied -100V 0.44A or self bias -21.5V
Magnetron-substrate separation: i) either (for substrade applied bias) 180mm ii) or (for substrate self bias) 100mm
Magnetron Sputter Coating
In simple sputter coating as illustrated in Figure 1 of the accompanying drawings high energy ions bombard the surface of the source material causing ejection of atoms into the vacuum system with energies of several eV.
The source of the high energy ions is usually a simple DC plasma glow discharge for which argon gas at
_2 a pressure of approximately 10 mbar is fed into the vacuum system. The source material or 'target' is made
the cathode of the device and large numbers of positive argon ions bombard the target ejecting the metal atoms.
For insulating materials such as ceramics a simple DC plasma glow discharge cannot be used and instead of RF plasma discharge is struck which maintains a DC bias on the 'target1 surface.
Compounds, particularly insulators, can also be deposited by reactive sputtering whereby a reactive gas is introduced along with the argon to react with the sputtered target material. Magnetron sputtering involves the introduction of a magnetic field close to the target which causes the emitted electrons to spiral down the magnetic field lines so encapsulating electron travel and, therefore, concentrating and enhancing ionisation of argon atoms.
Unbalanced Magnetron Sputtering
In the past, the main shortcoming of the high rate, magnetron sputtering ion plating process was the decrease in the density of the ion current incident on the substrates at distances greater than about 6cm. This problem was partly overcome by Window and Savvides, in recognising the benefit of 'unbalancing' the magnetic field configuration of the conventional magnetrons, so that the plasma in the target region was allowed to flow out towards the substrates, see Figure 2 of the accompanying drawings. This allowed some of the secondary electrons produced during sputtering to follow the magnetic field lines away from the target, toward the substrates, causing further ionising collisions. The unbalancing resulted in enhanced levels of ionisation near the substrates since the positive species followed the electrons away from
the magnetron due to their electrostatic attraction. Researchers quickly adopted various unbalanced magnetron configurations and the immediate benefits for deposition became apparent.
In the use of PVD deposition techniques to produce supersaturated solutions of thermodynamically insoluble elements, the limit of tungsten supersaturation in copper was 13wt%, and the limit of supersaturation of copper in tungsten was 18wt%.
Claims
1. A composite electrical contact comprising a substrate having co-deposited and multi-layer alloy coatings.
2. A composite electrical contact according to claim 1, in which combinations of coating materials are co-deposited to form a metastable supersaturated alloy.
3. A composite electrical contact according to claim 1, in which the coating materials are multi-layered in alternating layers.
4. A composite electrical contact according to claim 3, in which the multi-layer periods are 25nm.
5. A composite electrical contact according to any of claims 2-4, in which the coating materials comprise combinations of copper and tungsten, silver and tungsten, copper or silver with molybdenum, copper or silver with chomium, copper with palladuim, copper or silver with graplite, copper with cobalt, or silver with nickel or nickel and magnesium oxide.
6. A composite electrical contact according to claim 5, in which the coating materials comprise substantially pure tungsten and copper-tungsten alloy containing less than 10% tungsten in supersaturated solid solution.
7. A composite electrical contact according to claim 5 or claim 6, in which the limit of tungsten supersaturation in copper is 13wt% and the limit of supersaturation of copper in tungsten is 18wt%.
8. A composite electrical contact according to any preceding claim, in which an interface layer is provided between the coating and the substrate.
9. A composite electrical contact according to any preceding claim, in which the contact is provided on a rotor arm for a rotary ignition switch of a vehicle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU60082/94A AU6008294A (en) | 1993-02-16 | 1994-02-15 | Improvements in composite electrical contacts |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9303039.3 | 1993-02-16 | ||
| GB939303039A GB9303039D0 (en) | 1993-02-16 | 1993-02-16 | Improvements in composite electrical contacts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1994019814A1 true WO1994019814A1 (en) | 1994-09-01 |
Family
ID=10730481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1994/000305 WO1994019814A1 (en) | 1993-02-16 | 1994-02-15 | Improvements in composite electrical contacts |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU6008294A (en) |
| GB (1) | GB9303039D0 (en) |
| WO (1) | WO1994019814A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001041167A3 (en) * | 1999-11-30 | 2002-01-17 | Abb Ab | A contact element and a contact arrangement |
| WO2007031202A1 (en) * | 2005-09-13 | 2007-03-22 | Abb Technology Ag | Vacuum interrupter chamber |
| EP1616372B1 (en) * | 2003-04-17 | 2009-06-24 | AMI Doduco GmbH | Electrical plug contacts and a semi-finished product for the production thereof |
| CN117337475A (en) * | 2021-05-10 | 2024-01-02 | Abb瑞士股份有限公司 | Graphene-copper coated electrical contacts |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4307360A (en) * | 1979-08-30 | 1981-12-22 | Bell Telephone Laboratories, Incorporated | Sealed electrical contacts |
| US4316209A (en) * | 1979-08-31 | 1982-02-16 | International Business Machines Corporation | Metal/silicon contact and methods of fabrication thereof |
| DE3509022A1 (en) * | 1984-04-18 | 1985-11-07 | Villamosipari Kutató Intézet, Budapest | Method for producing electrical contact parts |
-
1993
- 1993-02-16 GB GB939303039A patent/GB9303039D0/en active Pending
-
1994
- 1994-02-15 WO PCT/GB1994/000305 patent/WO1994019814A1/en active Application Filing
- 1994-02-15 AU AU60082/94A patent/AU6008294A/en not_active Abandoned
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4307360A (en) * | 1979-08-30 | 1981-12-22 | Bell Telephone Laboratories, Incorporated | Sealed electrical contacts |
| US4316209A (en) * | 1979-08-31 | 1982-02-16 | International Business Machines Corporation | Metal/silicon contact and methods of fabrication thereof |
| DE3509022A1 (en) * | 1984-04-18 | 1985-11-07 | Villamosipari Kutató Intézet, Budapest | Method for producing electrical contact parts |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001041167A3 (en) * | 1999-11-30 | 2002-01-17 | Abb Ab | A contact element and a contact arrangement |
| US6838627B1 (en) | 1999-11-30 | 2005-01-04 | Abb Ab | Contact element and a contact arrangement |
| EP1616372B1 (en) * | 2003-04-17 | 2009-06-24 | AMI Doduco GmbH | Electrical plug contacts and a semi-finished product for the production thereof |
| US8697247B2 (en) | 2003-04-17 | 2014-04-15 | Doduco Gmbh | Electrical plug contacts and a semi-finished product for the production thereof |
| WO2007031202A1 (en) * | 2005-09-13 | 2007-03-22 | Abb Technology Ag | Vacuum interrupter chamber |
| US7939777B2 (en) | 2005-09-13 | 2011-05-10 | Abb Technology Ag | Vacuum interrupter chamber |
| CN117337475A (en) * | 2021-05-10 | 2024-01-02 | Abb瑞士股份有限公司 | Graphene-copper coated electrical contacts |
| CN117337475B (en) * | 2021-05-10 | 2025-03-04 | Abb瑞士股份有限公司 | Graphene-copper coated electrical contacts |
Also Published As
| Publication number | Publication date |
|---|---|
| AU6008294A (en) | 1994-09-14 |
| GB9303039D0 (en) | 1993-03-31 |
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