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WO1993013241A1 - Gaz purgeur dans la selection de zone de revetement de tranches - Google Patents

Gaz purgeur dans la selection de zone de revetement de tranches Download PDF

Info

Publication number
WO1993013241A1
WO1993013241A1 PCT/US1992/011028 US9211028W WO9313241A1 WO 1993013241 A1 WO1993013241 A1 WO 1993013241A1 US 9211028 W US9211028 W US 9211028W WO 9313241 A1 WO9313241 A1 WO 9313241A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
support means
purge
slot
purge gas
Prior art date
Application number
PCT/US1992/011028
Other languages
English (en)
Inventor
Johannes J. Schmitz
Frederick J. Scholz
Raymond L. Chow
Frank O. Uher
Steven C. Selbrede
Sien G. Kang
Norman L. Turner
Original Assignee
Genus, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genus, Inc. filed Critical Genus, Inc.
Publication of WO1993013241A1 publication Critical patent/WO1993013241A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Definitions

  • Fig. IB is a section through a via in a coated wafer to show the closing of a via as aspect ratio becomes larger and coating thickness remains constant.
  • Fig. 3 is a face-on view of the face of CVD chuck assembly 15 in the direction of arrow 22, without wafer 31 or wafer seal apparatus 21.
  • Fig. 4 is a side view of the chuck assembly of Fig. 3, disconnected from the central turret at flange 20.
  • a wafer when loaded on the chuck assembly, rests on pins 61 and 63, which protrude from surface 41 of the chuck assembly and extend beyond surface 43, such that a loaded wafer rests against surface 43.
  • the pins project from surface 43, and surface 43 is somewhat larger in diameter than the wafer to be processed.
  • the spacing D8 between surfaces 47 and 51 is controlled in machining relative to distance D9 and the thickness D10 of wafer 29 to control gap dimension Dll between surface 41 of the CVD chuck and surface 47 of the wafer seal ring.
  • a diffusion constant is a statement of the expected rate of diffusion in all directions from a source point of one gas in another gas, and are typically expressed as square centimeters per second. Diffusion constants under various
  • Fig. 13 is a perspective view of clamp ring 229 to better illustrate the geometry that forms a controlled slot between the clamp ring and the wafer.
  • a portion of clamp ring 229 is shown in contact with wafer 227 by two of the contact pads (287 and 293 are shown).
  • the clamp ring has a lip portion 298 of width D23 that forms a surface parallel to the wafer everywhere except at the contact pads.
  • the width D23 of each contact pad is about 1 mm.
  • the height D24 of each of the contact pads is about .127 mm ( .005 inch).
  • the height of the contact pads may be controlled by changing the clamp ring, so different heights may be used for different processes.
  • When the clamp ring is in contact with the wafer there is a controlled slot of .127 mm height nearly all the way around the wafer periphery. Purge gas
  • Fig. 11 without departing from the spirit and scope of the invention.
  • a single-station apparatus has been tested for wafers of nominal 150 mm diameter. Scaling of parts of the system allows stations to be built for wafers of other sizes as well. In the mode described there are three flexible wafer supports and three contact points for the clamp ring, but there could be more than three of either. For a larger
  • Purge gas is delivered to region 319 in this embodiment through passages such as passage 323 through the chuck.
  • a two-level circumferential groove 325 is machined in face 327 of the vacuum chuck, and face 327 is machined to be sufficient in circumference to accommodate this groove.
  • a distribution insert ring 329 is inset into the upper region of groove 325 to be level with face 327 of the chuck, and the inset ring has holes, such as hole 331, substantially equally spaced around the
  • purge gas is conducted to an annulus around a wafer formed by the wafer and the seal ring, and continuously withdrawn by use of a vacuum system connected to passages opening into the annular region
  • the gas may be introduced into the annular region, and many manifolding schemes for the vacuum passages as well.
  • contact pins or extensions may be mounted to the seal ring to contact a wafer and urge it against the chuck.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

On décrit un appareil comportant un support (223, 225) et une alimentation de gaz purgeur (241) qui empêche le revêtement marginal et arrière d'une tranche (227) dans la fabrication de circuits intégrés. On décrit également divers éléments de type boîtiers et des procédés prévus respectivement pour contenir et diriger le gaz purgeur, ainsi qu'un système de déposition chimique en phase vapeur (DCV) incorporant les éléments de l'invention.
PCT/US1992/011028 1991-12-23 1992-12-21 Gaz purgeur dans la selection de zone de revetement de tranches WO1993013241A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81273491A 1991-12-23 1991-12-23
US07/812,734 1991-12-23

Publications (1)

Publication Number Publication Date
WO1993013241A1 true WO1993013241A1 (fr) 1993-07-08

Family

ID=25210467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1992/011028 WO1993013241A1 (fr) 1991-12-23 1992-12-21 Gaz purgeur dans la selection de zone de revetement de tranches

Country Status (1)

Country Link
WO (1) WO1993013241A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2279366A (en) * 1993-06-24 1995-01-04 Tokyo Electron Ltd Semiconductor processing apparatus
EP0698674A3 (fr) * 1994-08-23 1997-10-29 Novellus Systems Inc Appareillage et procédé de dépÔt chimique en phase vapeur, permettant d'exclure le dépÔt et la contamination sur la face arrière et la périphérie des plaquettes
EP0688888A3 (fr) * 1994-06-20 1998-02-04 Applied Materials, Inc. Appareillage et procédé de traitement de substrats
EP0721999A3 (fr) * 1994-12-16 1998-06-17 Applied Materials, Inc. Chambre de dépÔt et appareillage pour sa mise en oeuvre
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5925411A (en) * 1990-07-16 1999-07-20 Siliconix Incorporated Gas-based substrate deposition protection
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
WO2005087976A1 (fr) * 2004-03-05 2005-09-22 Applied Materials, Inc. Materiel mis au point pour reduire un depot sur un meplat
WO2023041185A1 (fr) * 2021-09-20 2023-03-23 Applied Materials, Inc. Élément de support de cadre de masque, masque d'exclusion de bord, élément de cadre de masque, support de substrat, appareil de traitement de substrat et procédé de fabrication d'un ou de plusieurs dispositifs sur un substrat

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US4932358A (en) * 1989-05-18 1990-06-12 Genus, Inc. Perimeter wafer seal
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US5925411A (en) * 1990-07-16 1999-07-20 Siliconix Incorporated Gas-based substrate deposition protection
US5882417A (en) * 1990-07-16 1999-03-16 Novellus Systems, Inc. Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition apparatus
US5769951A (en) * 1990-07-16 1998-06-23 Novellus Systems Inc Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US5462603A (en) * 1993-06-24 1995-10-31 Tokyo Electron Limited Semiconductor processing apparatus
GB2279366B (en) * 1993-06-24 1996-12-18 Tokyo Electron Ltd Semiconductor processing apparatus
GB2279366A (en) * 1993-06-24 1995-01-04 Tokyo Electron Ltd Semiconductor processing apparatus
EP0688888A3 (fr) * 1994-06-20 1998-02-04 Applied Materials, Inc. Appareillage et procédé de traitement de substrats
EP0698674A3 (fr) * 1994-08-23 1997-10-29 Novellus Systems Inc Appareillage et procédé de dépÔt chimique en phase vapeur, permettant d'exclure le dépÔt et la contamination sur la face arrière et la périphérie des plaquettes
EP0721999A3 (fr) * 1994-12-16 1998-06-17 Applied Materials, Inc. Chambre de dépÔt et appareillage pour sa mise en oeuvre
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
WO2005087976A1 (fr) * 2004-03-05 2005-09-22 Applied Materials, Inc. Materiel mis au point pour reduire un depot sur un meplat
KR100926587B1 (ko) * 2004-03-05 2009-11-11 어플라이드 머티어리얼스, 인코포레이티드 경사면 증착을 줄이기 위한 하드웨어 개발
KR100926841B1 (ko) * 2004-03-05 2009-11-13 어플라이드 머티어리얼스, 인코포레이티드 경사면 증착을 줄이기 위한 하드웨어 개발
KR100929279B1 (ko) * 2004-03-05 2009-11-27 어플라이드 머티어리얼스, 인코포레이티드 경사면 증착을 줄이기 위한 하드웨어 개발
WO2023041185A1 (fr) * 2021-09-20 2023-03-23 Applied Materials, Inc. Élément de support de cadre de masque, masque d'exclusion de bord, élément de cadre de masque, support de substrat, appareil de traitement de substrat et procédé de fabrication d'un ou de plusieurs dispositifs sur un substrat

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