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WO1992005576A1 - Nouvelle structure et nouveau procede pour fabriquer des lasers a semi-conducteurs dont l'heterostructure est noyee dans du phosphure d'indium/phospure d'arseniure imdium gallium - Google Patents

Nouvelle structure et nouveau procede pour fabriquer des lasers a semi-conducteurs dont l'heterostructure est noyee dans du phosphure d'indium/phospure d'arseniure imdium gallium Download PDF

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Publication number
WO1992005576A1
WO1992005576A1 PCT/US1991/006600 US9106600W WO9205576A1 WO 1992005576 A1 WO1992005576 A1 WO 1992005576A1 US 9106600 W US9106600 W US 9106600W WO 9205576 A1 WO9205576 A1 WO 9205576A1
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Prior art keywords
layer
semiconductor
wafer
cap
active layer
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PCT/US1991/006600
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English (en)
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Roger P. Holmstrom
Edmund Meland
William Powazinik
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Gte Laboratories Incorporated
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Publication of WO1992005576A1 publication Critical patent/WO1992005576A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Definitions

  • This invention pertains to semiconductor lasers and more particularly to high modulation bandwidth single transverse mode semiconductor lasers.
  • Background Art As fiber optic communication systems continue to push to even higher data rates and larger bandwidths, the availability of reproducible and reliable high-speed lasers becomes increasingly important. This is particularly true for microwave modulation schemes like subcarrier multiplexing, where low relative intensity noise (RIN) is very important, or for phase modulated systems, where the avoidance of phase noise is crucial. In both of these modulation schemes it is very important to avoid operating near the resonance peak of the laser, where RIN peaks and a phase shift occurs. Both of these phenomena have a deleterious effect on the noise performance of the system. The further below the resonance peak the fiber optic system can be designed to operate, the better its noise performance will be. Clearly, demands on the system designer are reduced by the availability of lasers with higher resonance frequencies and modulation bandwidths.
  • Fabrication of single transverse mode semiconductor lasers with modulation bandwidth in excess of 15 GHz depends heavily upon both the accurate control of the active layer doping, width, and thickness, and upon providing a lateral optical cladding of the active layer which minimizes surface recombination and carrier leakage while not affecting the single transverse modal properties of the laser.
  • a low capacitance and low series resistance structure is required to minimize electrical parasitics.
  • High frequency single transverse mode semiconductor lasers have been achieved by constricted mesa (Bowers, et al., "High-speed InGaAsP constricted mesa lasers", IEEE J. Quantum Electron., Vol. QE-22, pp. 833-884, June 1986), mass transport (Liau, et al., "A novel technique for GalnAsP/InP buried heterostructure fabrication", Appl. Phys. Lett., Vol. 40, pp.568-570, Apr. 1982) and vapor phase regrowth (Su, et al. , "Ultra-high frequency modulation of InGaAsP lasers", Tech. Dig. Conf. Optical Fiber Communication, pp. 90-91, Feb.
  • an indium phosphide-based semiconductor laser is produced such that the epitaxial layer configurations (composition, thickness and doping) are appropriate for high frequency laser applications. This is accomplished by sandwiching a thin, narrow active layer of small bandgap material between thicker, larger bandgap material and filling the interstices on each side of the active layer with a semi-insulating layer in such manner that the sidewalls of the device form a smooth surface, thereby reducing the homojunction capacitance and carrier leakage.
  • the method of fabrication of a 1.3 ⁇ InGaAsP laser with three dB bandwidth of 24 GHz and intrinsic resonance frequencies uses a dry-etched vapor phase regrowth structure to fabricate lasers from LPE-grown, 1.3 ⁇ double heterostructure material, or any suitable epitaxial growth technique, i.e., (VPE, MOCVD, and MBE) that will produce InGaAsP/InP double heterostructure material.
  • the method comprises the steps of dry-etching channels, followed by selective etching to undercut the active layer, then InP regrowth on the sidewalls in a halide vapor phase system.
  • SiO-, and the p- and n-contact metallizations are alloyed ZnAu and SnAu, respectively, using a flood exposure technique.
  • FIG. 1 is a cross-sectional view of a semiconductor wafer from which an embodiment of the laser of the present invention can be formed;
  • FIGS. 2a through 2f are cross-sectional views of a portion of the wafer during various stages of fabrication of the embodiment of Fig. 1;
  • FIGS. 3a and 3b are cross-sectional views of a portion of the wafer during various stages of fabrication of the embodiment of Fig. 1;
  • FIGS. 4a through 4d are cross-sectional views of a portion of the wafer during various stages of fabrication of the embodiment of Fig. 1;
  • FIG. 5 is a perspective view in cross-section showing the structure of the injection type semiconductor laser embodiment of the present invention
  • FIGS. 6, 7, 8, and 9 are diagrams illustrating operating characteristics of an embodiment of a laser in accordance with the present invention. Best Mode for Carrying out the Invention
  • An injection type semiconductor laser device embodying the present invention will now be described in detail by reference to a laser device of a InGaAsP-InP double heterostructure as an example.
  • FIG. 1 A typical wafer as an initial starting point in the fabrication process is illustrated in FIG. 1.
  • the substrate is typically composed of crystalline InP and is covered by a buffer layer of n-InP of about 1-2 microns thick.
  • the active layer is composed of In _._ Galois As 6 _ P ., deliberately and has a thickness ideally of 0.2 microns.
  • On top of the active layer is a cladding layer of InP approximately 1 micron thick.
  • the fourth layer comprises a cap layer of In g0 Ga 2 n As 0 P 60 ° ⁇ from 0.2-0.3 microns in thickness.
  • the initial step to produce the laser of the present invention is to define the mesa.
  • the mesa width is deter ⁇ mined by the desired final active layer width, the desired amount of regrowth on both sides of the active layer and any processing variables encountered in the photolithographic, dry etching and wet etching steps.
  • the initial mask for the mesa would be in the order of 2.0 ; microns.
  • the first step is to deposit a mask material, for example, 0.3 microns of SiO ⁇ , on the epitaxial cap layer that is compatible with said layer and with the dry and wet processing chemistries used in defining the mesa.
  • the next step is to apply a layer of photoresist material using standard photolithographic techniques.
  • the next step is to align and delineate stripes in the photoresist along the (110) crystallographic direction of the InP material, as shown in Fig. 2a.
  • the exposed mask material is then plasma etched in accordance with well known plasma etching techniques, for example utilizing CF. , to expose the underlying InGaAsP cap material.
  • plasma etching in accordance with well known plasma etching techniques, for example C ForceH_/H_ , to etch through the InGaAsP cap layer and stopping in the InP cladding layer in regions not protected by the SiO ⁇ mask, resulting in a wafer as shown in Fig. 2b.
  • the wafer is then subjected to a wet chemical etch of a 1:9 ratio of HC1 and H_P0 4 acid mixture to selectively and anisotropically remove the InP cladding layer, using the InGaAsP cap layer as a mask, resulting in a wafer having the appearance as shown in Fig. 2c.
  • the wafer is again subjected to a plasma etch with the SiOgon, the cap and the cladding layer now acting as a mask to etch through the InGaAsP active layer, stopping in the InP buffer layer, resulting in a wafer as shown in Fig. 2d.
  • the wafer is again subjected to a wet chemical etch using the aforementioned HC1 and H_PO. acid mixture for a time sufficient to remove a portion, approximately one-half, of the exposed InP buffer layer, using the InGaAsP active layer as a mask, as shown in Fig. 2e.
  • the wafer is again exposed to wet chemical etching, this time in a solution of K_Fe(CN) fi :KOH:H 0, which is well known, to selectively etch the InGaAsP cap and active layers laterally as shown in Fig. 2f.
  • the solution etches the active layer at about twice the rate of the cap layer. Since the amount of lateral etching required is only on the order of 0.4 microns or less, the resulting active layer is very uniform across the entire wafer.
  • the SiOtude mask is removed by hydrofluoric acid.
  • the Wafer is then exposed to vapor phase epitaxial growth of an overlayer of semi-insulating InP as shown in FIG. 3A.
  • the amount of regrowth is limited to minimize intentional diffusion of dopants into and out of the various device layers thus degrading the quality of the devices.
  • the exact amount and uniformity of regrowth is critical only to the extent that the undercut regions be completely filled laterally.
  • the wafer is again etched in the 1:9 hydrochloric and phosphoric acid mixture, leaving an unetched amount of regrowth cladding on the side, wall of the active layer, the lateral dimension of this cladding being determined solely by the relative undercutting of the active layer with respect to the cap layer, and in view of the relative etch rate of the lateral etching and the amount of etching of the active layer (i.e. about 0.3-0.4 microns) the width of the cladding will be about 0.1-0.2 micron uniformly along the active layer.
  • This technique automatically controls the width of the regrown InP and symmetrically aligns the regrown material around the active layer.
  • the active layer width is poorly controlled due to oversized mesa and/or the amount of regrowth is relatively large (e.g. greater than 1 micron) or highly non-uniform for regrowth of less than 0.5 microns.
  • the advantage of achieving a thin regrown region is that it reduces homojunction capacitance and carrier leakage.
  • a dielectric material for example approximately 0.4 microns SiO_, is deposited on the mesa side of the wafer, conforming to and encapsulating the mesa, the channels and covering the cap layer.
  • This dielectric serves a number of purposes; it defines the p-contact using localized flood exposure, as disclosed in the cross-referenced application; it acts as a diffusion barrier during the diffusion step; it electrically isolates the p-metal overlay from the cap layer and is intrinsic to the reduction of the electrical parasitics of the device.
  • the contact openings are formed by using the localized flood exposure described in the copending application filed of even date herewith and assigned to the same assignee as the present application and is incorporated herein by reference thereto.
  • the entire mesa top and an appreciable amount of the mesa sidewall is bared as is shown in FIG. 4a.
  • Diffusion of an acceptor dopant, such as zinc, to p-type epitaxial layers can be performed as shown in FIG. 4b so that the entire exposed surface is electrically modified to yield a higher differential gain, lower resistivity and lower contact resistance.
  • the active layer can be heavily doped beyond the levels possible in as-grown epitaxial layers, a necessity for achieving high frequency operation.
  • Ohmic contact metal may then be deposited over the entire exposed surface such that the largest area of contact possible in this structure is achieved as shown in FIG.
  • the substrate, or bottom, side of the wafer is thinned to facilitate cleaving.
  • An electrode is formed on the bottom of the wafer, opposite to the ohmic contact on the top of the mesa structure, the wafer is divided into chips and made into laser devices as illustrated in FIG. 5 in a manner /well known in the art.
  • the intrinsic resonance of a semiconductor laser is proportional to the product of the total loss, the differential gain ⁇ g/ ⁇ N, and the photon density. If these parameters are optimized, it is then necessary to minimize electrical parasitics (i.e., the RC time constant) to fully exploit the modulation capabilities of the laser.
  • This invention utilizes a dry-etched, vapor-phase regrowth structure to fabricate lasers from LPE-grown, 1.3 ⁇ m double heterostructure material. This technique is a modification of the wet-etched, vapor-phase-regrowth technique previously used.
  • SiO_ is used as a mask and for electrical isola- tion, and the p- and n-contact metallizations are alloyed ZnAu and SnAu, respectively.
  • the dry-etched perpendicular sidewalls result in two improvements compared to previously wet-etched vapor-phase-regrown lasers: 1) well-controlled regrowth widths of about 0.2 ⁇ m per side.
  • a third improvement was aimed at increasing the photon density in the laser cavity. Because of the perpendicular mesa sidewalls and the minimized regrowth, it was possible to accurately control the width of the emitting region to 0.9 ⁇ 0.1 ⁇ m. This dimension, coupled with active layer thicknesses of about 0.2 ⁇ m and cavity lengths of 100 to 130 ⁇ m, resulted in extremely high photon densities in a single spatial mode, even at moderate drive currents.
  • Lasers made in accordance with this invention have achieved a modulation bandwidth of 24 GHz at room tempera ⁇ ture and intrinsic resonance frequencies in excess of 22 GHz. The lasers are also characterized by a linear power- current curve, resulting in excellent modulation efficien- cies even at 24 GHz.
  • the swept frequency response (S-,-) is shown in FIG. 6 of a laser with a 3-dB bandwidth of 24 GHz.
  • the 3-dB bandwidths for lasers according to this invention ranged from 18 to 24 GHz for lasers with cavity lengths of about 130 microns.
  • FIG. 6 shows that the modulation efficiency at 24 GHz has dropped only 3 dB with a 100 mA bias current compared to its low-frequency, low-bias values.
  • the intrinsic resonance frequency, f of the lasers was found from the measured relative intensity noise (RIN) spectral density.
  • the RIN spectrum shown in FIG.7, indi ⁇ cates that even at bias currents as low as 60 mA the response peak is beyond 18 GHz.
  • These data, together with the S ? -. data of FIG. 6, indicate that the intrinsic resonance of this laser is in excess of 22 GHz.
  • the resonance frequency, f , and damping rate, ⁇ are accurately determined, free of any electrical parasitics.
  • the maximum achievable bandwidth in the absence of parasitics i.e. limited only by damping
  • FIG. 8 shows the fitted . ⁇ versus fo for the same laser. From the slope, K is found to be 0.19 ns, while more typical values are approximately 0.3 ns. These values of K suggest that the maximum damping-limited bandwidth could be as high as 44 GHz.
  • the intrinsic resonance frequency is plotted as a function of the square root of the optical power in FIG.
  • a record modulation bandwidth of 24 GHz at room-temperature is reported for 1.3 ⁇ m lasers fabricated using a dry-etched, vapor phase regrowth technique. This and other dynamic characteristics are significantly better than the previous record of 22 GHz set by 1.3 ⁇ m VPR-BH lasers, and the 15 to 18 GHz bandwidths which are more typical for high-frequency InGaAsP laser structures. Furthermore, we observe intrinsic resonance frequencies in excess of 22 GHz, the highest yet obtained for either conventional double heterostructure or quantum well InGaAsP lasers. These improvements are accomplished by using a dry-etched, vapor phase regrowth technique. These lasers exhibit reduced leakage currents and electrical parasitics, and are characterized by a linear power-current curve, resulting in excellent modulation efficiencies even at 24 GHz.

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Abstract

On fabrique un laser à semi-conducteurs ayant une largeur de bande à modulation élevée en utilisant une couche supérieure InGaAsP (14) et une couche active InGaAsP (12) dont les structures cristallines sont différentes. Des gorges (21 et 22) sont formées par attaque à l'acide par procédé anisotrope dans les couches supérieure (14), de placage (13) et active (12) et partiellement dans la couche intermédiaire (11). Les couches active (12) et supérieure (14) sont attaquées latéralement et un matériau semi-isolant (30) est déposé sur les parois latérales. Une autre attaque à l'acide ne laisse qu'une mince paroi (31 et 32) de matériau semi-isolant autour de la couche active (12). On a fabriqué avec succès à l'aide de ce procédé des lasers InGaAsp 1,3 νm avec des largeurs de bandes 3 dB de 24 GHz et des fréquences de résonance intrinsèque dépassant 22 GHz. Il s'agit de la plus grande largeur de bande jamais enregistrée pour un laser à semi-conducteurs et de la plus importante fréquence de résonance pour des lasers InGaAsP. On a observé d'excellentes efficacités de modulation à des fréquences élevées.
PCT/US1991/006600 1990-09-14 1991-09-12 Nouvelle structure et nouveau procede pour fabriquer des lasers a semi-conducteurs dont l'heterostructure est noyee dans du phosphure d'indium/phospure d'arseniure imdium gallium WO1992005576A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/583,409 US5082799A (en) 1990-09-14 1990-09-14 Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US583,409 1990-09-14

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US (1) US5082799A (fr)
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JP (1) JPH05502761A (fr)
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JPH05502761A (ja) 1993-05-13
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US5082799A (en) 1992-01-21
CA2072632A1 (fr) 1992-03-15

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