+

WO1991017575A3 - Dispositif optoelectronique - Google Patents

Dispositif optoelectronique Download PDF

Info

Publication number
WO1991017575A3
WO1991017575A3 PCT/GB1991/000702 GB9100702W WO9117575A3 WO 1991017575 A3 WO1991017575 A3 WO 1991017575A3 GB 9100702 W GB9100702 W GB 9100702W WO 9117575 A3 WO9117575 A3 WO 9117575A3
Authority
WO
WIPO (PCT)
Prior art keywords
type
layer
active layer
junction
type material
Prior art date
Application number
PCT/GB1991/000702
Other languages
English (en)
Other versions
WO1991017575A2 (fr
Inventor
David Wake
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm filed Critical British Telecomm
Priority to JP50824791A priority Critical patent/JP3321160B2/ja
Priority to US07/946,465 priority patent/US5446751A/en
Priority to AU77587/91A priority patent/AU651111B2/en
Publication of WO1991017575A2 publication Critical patent/WO1991017575A2/fr
Publication of WO1991017575A3 publication Critical patent/WO1991017575A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Undergarments, Swaddling Clothes, Handkerchiefs Or Underwear Materials (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

Un dispositif optoélectronique comprend une première couche épitaxiale de type n (2), une couche active (3) comprenant une seconde couche épitaxiale qu'on fait pousser sur ladite première couche et une troisième couche épitaxiale (8) composée d'un matériau de type p sous forme d'une structure à crête (8') qu'on fait pousser de manière sélective sur la couche active ou par-dessus celle-ci, et dans laquelle une jonction p-n est formée dans la couche active entre une région d'un matériau de type p alignée sous ladite crête, et des régions adjacentes de type n de la couche active, la première couche sous-jacente (2) étant entièrement de type n. Un procédé de fabrication de ce dispositif consiste à faire pousser une structure plane entièrement de type n, à former un masque diélectrique (5) par-dessus, à faire pousser par épitaxie sélective la structure à crête faite d'un matériau de type p, et à former simultanément la junction p-n par diffusion sur ladite structure.
PCT/GB1991/000702 1990-05-01 1991-05-01 Dispositif optoelectronique WO1991017575A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50824791A JP3321160B2 (ja) 1990-05-01 1991-05-01 光電子半導体装置およびその製造方法
US07/946,465 US5446751A (en) 1990-05-01 1991-05-01 Optoelectronic device
AU77587/91A AU651111B2 (en) 1990-05-01 1991-05-01 Optoelectronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9009726.2 1990-05-01
GB909009726A GB9009726D0 (en) 1990-05-01 1990-05-01 Optoelectronic device

Publications (2)

Publication Number Publication Date
WO1991017575A2 WO1991017575A2 (fr) 1991-11-14
WO1991017575A3 true WO1991017575A3 (fr) 1992-03-05

Family

ID=10675255

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1991/000702 WO1991017575A2 (fr) 1990-05-01 1991-05-01 Dispositif optoelectronique

Country Status (7)

Country Link
US (1) US5446751A (fr)
EP (1) EP0527827A1 (fr)
JP (1) JP3321160B2 (fr)
AU (1) AU651111B2 (fr)
CA (1) CA2081898C (fr)
GB (1) GB9009726D0 (fr)
WO (1) WO1991017575A2 (fr)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757027A (en) * 1995-11-06 1998-05-26 International Business Machines Corporation Semiconductor wafer testing method and apparatus
KR100220250B1 (ko) * 1996-10-19 1999-09-15 김영환 광전자 집적 회로의 제조 방법
GB2345188B (en) * 1998-12-22 2001-02-14 Hitachi Ltd Semiconductor radiation detector and manufacture thereof
WO2000065665A1 (fr) 1999-04-27 2000-11-02 Services Petroliers Schlumberger Source de rayonnement
US6417528B1 (en) * 2000-01-28 2002-07-09 Agere Systems Guardian Corp. High speed semiconductor photodetector
JP4157698B2 (ja) * 2001-11-26 2008-10-01 ユーディナデバイス株式会社 半導体受光素子およびその駆動方法
US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
JP3985159B2 (ja) 2003-03-14 2007-10-03 日本電気株式会社 利得クランプ型半導体光増幅器
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7279731B1 (en) 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US8519503B2 (en) * 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7242069B2 (en) * 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8686529B2 (en) * 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US7256470B2 (en) 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US7656001B2 (en) 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
GB2431538B (en) * 2005-10-24 2010-12-22 E2V Tech CCD device
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
US8431814B2 (en) * 2008-07-17 2013-04-30 Mark A. Wessels Laser pick-up for a stringed musical instrument
EP2335288A4 (fr) * 2008-09-15 2013-07-17 Osi Optoelectronics Inc Photodiode en arête de poisson à couche active mince comportant une couche n+ peu profonde et son procédé de fabrication
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP2011166108A (ja) * 2010-01-15 2011-08-25 Ricoh Co Ltd 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP2014126718A (ja) * 2012-12-26 2014-07-07 V Technology Co Ltd 半導体光集積回路
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US10928659B2 (en) 2014-02-24 2021-02-23 Rockley Photonics Limited Optoelectronic device
US10222677B2 (en) 2014-02-24 2019-03-05 Rockley Photonics Limited Optoelectronic device
US10921616B2 (en) 2016-11-23 2021-02-16 Rockley Photonics Limited Optoelectronic device
US10216059B2 (en) 2015-03-05 2019-02-26 Rockley Photonics Limited Waveguide modulator structures
US10191350B2 (en) 2015-03-05 2019-01-29 Rockley Photonics Limited Waveguide modulators structures
US10678115B2 (en) 2015-03-05 2020-06-09 Rockley Photonics Limited Waveguide modulator structures
US11150494B2 (en) 2015-03-05 2021-10-19 Rockley Photonics Limited Waveguide modulator structures
US11101256B2 (en) 2016-11-23 2021-08-24 Rockley Photonics Limited Optical modulators
WO2018096038A1 (fr) * 2016-11-23 2018-05-31 Rockley Photonics Limited Dispositif électro-optiquement actif
CN110325900B (zh) 2016-12-02 2023-11-17 洛克利光子有限公司 波导光电器件
CN110291450B (zh) 2016-12-02 2023-05-23 洛克利光子有限公司 波导装置和掺杂波导装置的方法
GB2576652B (en) 2017-07-05 2021-12-22 Rockley Photonics Ltd Optoelectronic device
US11456577B2 (en) * 2020-07-28 2022-09-27 Raytheon Company Monolithic quantum cascade laser (QCL)/avalanche photodiode (APD) infrared transceiver

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163952A (en) * 1975-01-09 1979-08-07 International Standard Electric Corporation Injection lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108386A (ja) * 1982-12-14 1984-06-22 Fujitsu Ltd 半導体発光装置
JPS62179790A (ja) * 1986-02-04 1987-08-06 Seiko Epson Corp 半導体レ−ザ
JPS63278289A (ja) * 1987-03-30 1988-11-15 Hitachi Ltd 半導体発光装置
JPH01103893A (ja) * 1987-10-16 1989-04-20 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPH0246406A (ja) * 1988-08-06 1990-02-15 Seiko Epson Corp 光導波路及びその製造方法
JPH0271575A (ja) * 1988-09-06 1990-03-12 Seiko Epson Corp 光集積回路
JP2928578B2 (ja) 1990-03-30 1999-08-03 株式会社東芝 半導体レーザの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163952A (en) * 1975-01-09 1979-08-07 International Standard Electric Corporation Injection lasers

Non-Patent Citations (12)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS LETTERS vol. 21, no. 13, 20 June 1985, STEVENAGE, GB pages 571 - 573; N.K. DUTTA ET AL.: 'Fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback multi-quantum-well lasers' see the whole document *
ELECTRONICS LETTERS vol. 22, no. 21, 9 October 1986, STEVENAGE, GB pages 1117 - 1118; A. KUROBE ET AL.: 'Sumbilliampere lasing of Zn-diffused mesa buried-hetero AIxGa1-xAs/GaAs multi-quantum-well lasers at 77K' see the whole document *
ELECTRONICS LETTERS. vol. 25, no. 15, 20 July 1989, ENAGE GB pages 954 - 956; T. MATSUI ET AL.: 'GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching' see the whole document *
ELECTRONICS LETTERS. vol. 26, no. 15, 19 July 1990, STEVENAGE GB pages 1166 - 1168; D. WAKE ET AL.: 'Monolithic integration of 1.5 um optical preamplifier and pin photodetector with a gain of 20dB and a bandwidth of 35GHz' see the whole document *
JOURNAL OF CRYSTAL GROWTH vol. 95, no. 1-4, February 1989, AMSTERDAM, NL pages 167 - 170; D.A. ANDREWS ET AL.: 'Selective area of growth of indium phosphide based heterostructures by metalorganic molecular beam epitaxy' see the whole document *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 24 (E-576)23 January 1988 & JP,A,62 179 790 ( SEIKO EPSON CORP. ) 6 August 1987 see abstract *
PATENT ABSTRACTS OF JAPAN vol. 13, no. 106 (E-726)14 March 1989 & JP,A,63 278 289 ( HITACHI LTD ) 15 November 1988 see abstract *
PATENT ABSTRACTS OF JAPAN vol. 13, no. 346 (E-798)3 August 1989 & JP,A,1 103 893 ( MATSUSHITA ELECTRIC IND. CO. LTD ) 20 April 1989 see abstract *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 207 (P-1043)26 April 1990 & JP,A,2 046 406 ( SEIKO EPSON CORP. ) 15 February 1990 see abstract *
PATENT ABSTRACTS OF JAPAN vol. 14, no. 248 (E-933)28 May 1990 & JP,A,2 071 575 ( SEIKO EPSON CORP. ) 12 March 1990 see abstract *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 226 (E-272)(1663) 17 October 1984 & JP,A,59 108 386 ( FUJITSU K.K. ) 22 June 1984 see abstract *
TRANSACTIONS OF THE INSTITUTE OF ELECTRONICS ANDCOMMUNICATION vol. E69, no. 4, April 1986, TOKYO JP pages 392 - 396; M. HIROSE ET AL.: 'An array of GaAIAs composite-cavity lasers monolithically integrated with photodetectors' see the whole document *

Also Published As

Publication number Publication date
AU7758791A (en) 1991-11-27
WO1991017575A2 (fr) 1991-11-14
GB9009726D0 (en) 1990-06-20
JPH05507175A (ja) 1993-10-14
AU651111B2 (en) 1994-07-14
CA2081898C (fr) 1997-01-14
US5446751A (en) 1995-08-29
EP0527827A1 (fr) 1993-02-24
JP3321160B2 (ja) 2002-09-03

Similar Documents

Publication Publication Date Title
WO1991017575A3 (fr) Dispositif optoelectronique
US4148045A (en) Multicolor light emitting diode array
EP0383215A3 (fr) Structure de croissance épitaxiale pour un dispositif émetteur de lumière à semi-conducteur et dispositif à semi-conducteur émetteur de lumière comportant cette structure
WO1996030945A3 (fr) Materiaux pour semi-conducteurs a heterostructures integrees a base de nitrures du groupe iii-v et leur procede de fabrication
CA2321118A1 (fr) Procede permettant de produire des couches semi-conductrices de nitrure de gallium par croissance de recouvrement laterale a travers des masques, et structures semi-conductrices de nitrure de gallium ainsi produites
EP0778621A3 (fr) Dispositif semi-conducteur comprenant une photodiode et un élément bipolaire, et méthode de fabrication
WO1989010007A3 (fr) Photodetecteurs infrarouges a jonctions noyees
KR850005164A (ko) 반도체 장치
US4199385A (en) Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion
EP0349021A3 (fr) Dispositif semi-conducteur et procédé pour sa fabrication
EP0304048A3 (fr) Photodiode planaire à avalanche à hétérojonction
JPS55105344A (en) Semiconductor device
CA2088800A1 (fr) Methode permettant de fabriquer des elements a semiconducteur recevant la lumiere
JPS57154884A (en) Semiconductor laser device
JPS5513957A (en) Semiconductor device
US4167016A (en) Optically isolated monolithic light emitting diode array
JPS5586182A (en) Manufacture of semiconductor device
JPS57190371A (en) Semiconductor photoelectric converter and manufacture thereof
JPS5539685A (en) Semiconductor device
JPH07507659A (ja) カンタムワイヤーの製作方法
JPS6459956A (en) Heterostructure bipolar transistor and manufacture thereof
JPS6457786A (en) Manufacture of semiconductor laser device
JPS6450591A (en) Semiconductor device and manufacture thereof
JPS5637622A (en) Manufacture of semiconductor device
JPS6421990A (en) Manufacture of semiconductor light-emitting device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AU CA JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE

AK Designated states

Kind code of ref document: A3

Designated state(s): AU CA JP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE

WWE Wipo information: entry into national phase

Ref document number: 2081898

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 1991908775

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1991908775

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1991908775

Country of ref document: EP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载