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WO1990000579A1 - Stripping composition using n-cyclohexyl-2-pyrrolidone - Google Patents

Stripping composition using n-cyclohexyl-2-pyrrolidone Download PDF

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Publication number
WO1990000579A1
WO1990000579A1 PCT/US1989/003037 US8903037W WO9000579A1 WO 1990000579 A1 WO1990000579 A1 WO 1990000579A1 US 8903037 W US8903037 W US 8903037W WO 9000579 A1 WO9000579 A1 WO 9000579A1
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composition
percent
unexposed
contacting
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PCT/US1989/003037
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French (fr)
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William C. Bowden
Richard L. Brewer
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Advanced Chemical Systems International Corporation
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Publication of WO1990000579A1 publication Critical patent/WO1990000579A1/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • C09D9/005—Chemical paint or ink removers containing organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Definitions

  • This invention relates to an improved stripping composition for the removal of deep-uv, ion implanted, high temperature baked (above 1603C), and other harshly treated positive photoresists or other polymeric layers. More specifically, it relates to (a) a stripping composition comprising N-cyclohexyl-2-pyrrolidone and (b) removal of deep-uv, ion implanted, high temperature baked, and similar difficult to remove positive photoresists or polymeric layers without causing damage to the underlying substrates or metallic layers with such a composition.
  • a stripper including (a) 2-pyrrolidone or its 1 to 3 carbon N-alkyl or N-hydroxyalkyl derivatives and (b) a dialkyl sulfone compound.
  • Johnson U.S. Patent No. 4,592,787, discloses a stripper which comprises a lower alkyl monoether of a propylene glycol (or a mixture of such monoethers) , a 2 to 6 carbon
  • a deep- uv treatment i ⁇ typically used to stabilize and improve definition of photoresist prior to plasma etching of aluminum or aluminum alloys.
  • a typical deep-uv process includes deep-uv exposure, followed by hard bake of the photoresist at 160-2203C prior to etching in a plasma or reactive ion etch system.
  • Ion implantation is also widely used in the manufacturing of integrated circuits to change the conductivity of the semiconductor material.
  • examples of such ion dopants include phosphorus, boron, arsenic, and antimony.
  • a photoresist process i ⁇ typically used prior to ion implantation to restrict ionic species from being implanted into unwanted regions of substrates.
  • a - positive photoresist stripper in accordance with this invention has N-cyclohexyl-2-pyrrolidone (CHP) as " its primary active ingredient.
  • the CHP stripping solutions of this invention are able to remove deep-uv cured, high temperature baked, ion implanted,
  • photoresists are based on the use of a novolac matrix resin and, typically, a diazoquinone photoactive compound or sensitizer.
  • Novolac resins are soluble in common organic solvents and also in aqueous base solutions by virtue of the acidic characteristic of their phenolic functionality.
  • the diazoquinone derivatives are soluble in common organic solvents but are insoluble in aqueous bases. Upon exposure to light, these photoresists undergo a series of reactions that culminate in the formation of an indene carboxylic acid.
  • the photoproduct unlike its precursor, i ⁇ extremely soluble in aqueous bases by virtue of its carboxylic acid functionality.
  • organometallic compounds will react with transition and nontransition metals to form organometallic compounds.
  • transition and nontransition metals will react with transition and nontransition metals to form organometallic compounds.
  • organometallic compounds During deep-uv treatment with subsequent plasma or reactive ion etching of metal or ion implantation these organometallic compounds occur due to the heavy metals present during the ⁇ e proces ⁇ steps.
  • These organometallic compounds have different solubility properties, which make them difficult to remove in commonly used solvents, and
  • SUBSTITUTESHEET they are also impervious to strong oxidizing agents, such as sulf ric acid.
  • the present proces ⁇ preferably uses a combination of CHP solvent, an alkaline solvent, and a polar solvent to remove the organometallic resist by dissolution or lift off.
  • the stripping composition of this invention comprises from about 5 to 100 percent by weight, preferably from about 5 to about 60 percent by weight, and most preferably from about 15 to 25 percent by weight of N-cyclohexyl-2-pyrrolidone (CHP) :
  • N-cyclohexyl-2- pyrrolidone compounds with alkyl, hydroxy, and hydroxyalkyl substituents on the cyclohexyl group will also have the stripping properties of N-cyclohexyl-2- pyrrolidone disclosed herein.
  • the preferred composition includes a polar or non- polar organic solvent.
  • polar organic solvent e.g., benzyl ether
  • SUBST ITUTESHEET solvents include N-methyl-2-pyrrolidone (NMP), ⁇ - butylac-tone, diethylene glycol n-butyl ether, propylene glycol ether acetal, dimethyl formamide, and the like.
  • the most preferred polar organic solvents are NMP and ⁇ butylactone.
  • Suitable nonpolar organic solvents ' ' include aliphatic and aromatic hydrocarbons, preferably aromatic hydrocarbons.
  • the organic solvents are used in the composition from about 0 percent to about 95 percent by weight, are preferably used from about 20 to about 70 percent by weight, and most preferably used from about 30 to 50 percent by weight.
  • the solvents may be used singly or a ⁇ a mixture. High boiling point solvents should be used, due to the elevated temperatures employed in the proces ⁇ .
  • the preferred composition also uses an alkaline solvent, such as the following alkaline amines: monoethanolamine, triethanolamine, diglycolamine (marketed by Texaco), trimethyl-ammonium hydroxide, and the like.
  • alkaline amines are triethanolamine and digycolamine. These alkaline amines are preferably used in the composition from about 20 to about 70 percent by weight, and most preferably used from about 30 to 50 percent by weight. The amines may be used singly or as a mixture.
  • composition of this invention is suitable for use with all commonly employed positive photoresists used in the semiconductor industry.
  • positive photoresists include KTI 820 and 825 resists, Shipley 1400 and 1500 resists, AZ 1300 resists, MacDermid 900 series resists, and Dyna-Chem 800 series resists.
  • the method for stripping photoresi ⁇ t from a substrate in accordance with the invention comprises contacting the positive photore ⁇ i ⁇ t with the CHP composition at a temperature and for a time sufficient to remove the photoresi ⁇ t, typically at a temperature of about 70-1303C for a time of about 1 minute to 75 minutes.
  • Stripper formulas used 1. 20% N-methyl-2-pyrrolidone (NMP)/20% monoethanolamine/ 60% diethylene glycol n-butyl ether. 2. 100% NMP. 3. 50% NMP/50% digycolamine. 4. 20% N-cyclohexyl-2-pyrrolidone (CHP)/5% butylactone/ ⁇ 35% NMP/40% digycolamine.
  • Set 1 Wafers 1. Wafers with Si0 2 deposited with Ti/SiAl/TiN. 2. Coated with positive photoresist and patterned. 3. Deep-uv treated, then baked at 1603C. 4. Reactive ion etched using a chlorinated gas.
  • Set 2 Wafers 1. Processed same as in Set 1 but baked at 2003C.
  • Sets 3 and 4 Wafers 1. Wafers with Si ⁇ 2 deposited with TiW/AlCu. 2. Coated with positive photoresist and patterned. 3. Baked at 1803C for 30 minutes. 4a.
  • Set 3 Wafers processed using chlorinated plasma etch process followed by a fluorinated treatment.
  • Stripper Formula 1 is not suitable for the removal of difficult to remove positive photoresi ⁇ t ⁇ ; (2) Stripper Formula 2 did not accomplish total dissolution of photoresist until a temperature greater than 1203C was used. This formula is unsuitable because it has to be used 103 higher than its flash point for ⁇ ucces ⁇ ful results; (3) Stripper Formula 3 also had difficulty in removing the photoresist at temperatures lower than 1203C; (4) Stripper Formula 4 removed the photoresist using a temperature 15 to 203 lower than the other strippers used (i.e. at " 100 to 1153C), and below the products' flash point (1203C). Scanning electron microscope analysis of the wafers verified these results.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A stripping composition for removing resist materials or other polymeric layers from a substrate contains N-cyclohexyl-2-pyrrolidone. Either or both of an organic solvent and an alkaline amine compound may be added to the stripping composition.

Description

Specification "Stripping Composition Using N-Cyclohexyl-2-Pyrrolidone" BACKGROUND OF THE INVENTION Field of the Invention This invention relates to an improved stripping composition for the removal of deep-uv, ion implanted, high temperature baked (above 1603C), and other harshly treated positive photoresists or other polymeric layers. More specifically, it relates to (a) a stripping composition comprising N-cyclohexyl-2-pyrrolidone and (b) removal of deep-uv, ion implanted, high temperature baked, and similar difficult to remove positive photoresists or polymeric layers without causing damage to the underlying substrates or metallic layers with such a composition.
Description of the Prior Art Stripping compositions utilizing various amine compounds for the removal of positive photoresist from semiconductor wafers using the photoresist process to delineate a pattern on a wafer surface during the manufacturing of integrated circuits are known in the art. Sizensky, U.S. Patent No. 4,617,251, teaches a stripper comprised of an amine compound (such as monoethanolamine or triethanolamine) and an organic polar solvent (including alkyl lactams such as N--methyl- 2-pyrrolidone) . Ward et al., U.S. Patent No. 4,401,747, disclose a stripper including (a) 2-pyrrolidone or its 1 to 3 carbon N-alkyl or N-hydroxyalkyl derivatives and (b) a dialkyl sulfone compound. Johnson, U.S. Patent No. 4,592,787, discloses a stripper which comprises a lower alkyl monoether of a propylene glycol (or a mixture of such monoethers) , a 2 to 6 carbon
SUBSTITUTESHEET alkanol, an alkanolamine, and a base. Bakoε et al. , U.S. Patent No. 4,276,186 teach a solder flux removing composition that includes N-methyl-2-pyrrolidone and an alkanolamine.
In the manufacturing of integrated circuits a deep- uv treatment iε typically used to stabilize and improve definition of photoresist prior to plasma etching of aluminum or aluminum alloys. For example, a typical deep-uv process includes deep-uv exposure, followed by hard bake of the photoresist at 160-2203C prior to etching in a plasma or reactive ion etch system.
Ion implantation is also widely used in the manufacturing of integrated circuits to change the conductivity of the semiconductor material. Examples of such ion dopants include phosphorus, boron, arsenic, and antimony. A photoresist process iε typically used prior to ion implantation to restrict ionic species from being implanted into unwanted regions of substrates.
As a result of such processes as deep-uv, high temperature baking, plasma etching, reactive ion etching, and ion implantation, the positive photoresist becomes extremely difficult to remove. Commercially available photoresist stripping solutions have not" proven to be suitable for removing such photoresists without the help of a plasma ash system. A common method used to remove the photoresist after these processes is: (A) Immersion of substrate into a commercially available photoresist stripper for 30-60 minutes; (B) Plasma ash for 1 hour; and (C) Repeat
SUBSTITUTESHEET step A. This process is very time consuming and expensive for device manufactures.
OBJECTS OF THE INVENTION It is an object of this invention to provide a photoresist stripping solution which will completely and reliably remove polymeric materials, and in particular positive photoresist, that have been subjected to deep-uv curing, high temperature baking, ion implantation, and other processes that harshly treat the materials.
It is another object of the invention to provide such a stripping solution which is usable with commonly used commercially available positive photoresists.
It is still another object of the invention to eliminate or minimize the need to use oxygen plasma equipment and processes to remove deep-uv treated, high temperature baked, ion implanted positive photoresist and other hard to remove polymeric materials from substrates.
These and related objects may be achieved through the use of a novel stripping composition for stripping positive photoresist and other hard to remove polymeric coatings from substrates as herein disclosed. A - positive photoresist stripper in accordance with this invention has N-cyclohexyl-2-pyrrolidone (CHP) as" its primary active ingredient.
Because of its strong dissolving properties, the CHP stripping solutions of this invention are able to remove deep-uv cured, high temperature baked, ion implanted,
SUBSTITUTESHEET and other harshly treated polymeric films used in semiconductor device manufacturing. At the same time, these solutions do not attack the substrates, aluminum, or metal alloys used to manufacture semiconductor devices.
The attainment of the foregoing and related objects, advantages and features of the invention should be more readily apparent to those skilled in the art, after review of the following more detailed description of the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Positive photoresists are based on the use of a novolac matrix resin and, typically, a diazoquinone photoactive compound or sensitizer. Novolac resins are soluble in common organic solvents and also in aqueous base solutions by virtue of the acidic characteristic of their phenolic functionality. The diazoquinone derivatives are soluble in common organic solvents but are insoluble in aqueous bases. Upon exposure to light, these photoresists undergo a series of reactions that culminate in the formation of an indene carboxylic acid. The photoproduct, unlike its precursor, iε extremely soluble in aqueous bases by virtue of its carboxylic acid functionality. These substances will react with transition and nontransition metals to form organometallic compounds. During deep-uv treatment with subsequent plasma or reactive ion etching of metal or ion implantation these organometallic compounds occur due to the heavy metals present during theεe procesε steps. These organometallic compounds have different solubility properties, which make them difficult to remove in commonly used solvents, and
SUBSTITUTESHEET they are also impervious to strong oxidizing agents, such as sulf ric acid. The present procesε preferably uses a combination of CHP solvent, an alkaline solvent, and a polar solvent to remove the organometallic resist by dissolution or lift off.
The stripping composition of this invention comprises from about 5 to 100 percent by weight, preferably from about 5 to about 60 percent by weight, and most preferably from about 15 to 25 percent by weight of N-cyclohexyl-2-pyrrolidone (CHP) :
Figure imgf000007_0001
Experimental testing demonstrated that the CHP was effective in the stripping composition in mixtures of from about 5 to 100 percent by weight. Improvement in performance was not found for mixtureε containing in excess of about 25 percent by weight of CHP.
Although verifying experiments have not been conducted, it is believed that N-cyclohexyl-2- pyrrolidone compounds with alkyl, hydroxy, and hydroxyalkyl substituents on the cyclohexyl group will also have the stripping properties of N-cyclohexyl-2- pyrrolidone disclosed herein.
The preferred composition includes a polar or non- polar organic solvent. Specific suitable polar organic
SUBSTITUTESHEET solvents include N-methyl-2-pyrrolidone (NMP), ^- butylac-tone, diethylene glycol n-butyl ether, propylene glycol ether acetal, dimethyl formamide, and the like. The most preferred polar organic solvents are NMP and ^ butylactone. Suitable nonpolar organic solvents '' include aliphatic and aromatic hydrocarbons, preferably aromatic hydrocarbons. The organic solvents are used in the composition from about 0 percent to about 95 percent by weight, are preferably used from about 20 to about 70 percent by weight, and most preferably used from about 30 to 50 percent by weight. The solvents may be used singly or aε a mixture. High boiling point solvents should be used, due to the elevated temperatures employed in the procesε.
The preferred composition also uses an alkaline solvent, such as the following alkaline amines: monoethanolamine, triethanolamine, diglycolamine (marketed by Texaco), trimethyl-ammonium hydroxide, and the like. The most preferred alkaline amines are triethanolamine and digycolamine. These alkaline amines are preferably used in the composition from about 20 to about 70 percent by weight, and most preferably used from about 30 to 50 percent by weight. The amines may be used singly or as a mixture.
The composition of this invention is suitable for use with all commonly employed positive photoresists used in the semiconductor industry. Examples of such positive photoresists include KTI 820 and 825 resists, Shipley 1400 and 1500 resists, AZ 1300 resists, MacDermid 900 series resists, and Dyna-Chem 800 series resists.
SUBSTITUTESHEET The method for stripping photoresiεt from a substrate in accordance with the invention comprises contacting the positive photoreεiεt with the CHP composition at a temperature and for a time sufficient to remove the photoresiεt, typically at a temperature of about 70-1303C for a time of about 1 minute to 75 minutes.
The effectiveness of the preferred embodiment of the invention is demonstrated by the following non-limiting examples: Stripper formulas used: 1. 20% N-methyl-2-pyrrolidone (NMP)/20% monoethanolamine/ 60% diethylene glycol n-butyl ether. 2. 100% NMP. 3. 50% NMP/50% digycolamine. 4. 20% N-cyclohexyl-2-pyrrolidone (CHP)/5% butylactone/^ 35% NMP/40% digycolamine. Set 1 Wafers 1. Wafers with Si02 deposited with Ti/SiAl/TiN. 2. Coated with positive photoresist and patterned. 3. Deep-uv treated, then baked at 1603C. 4. Reactive ion etched using a chlorinated gas. Set 2 Wafers 1. Processed same as in Set 1 but baked at 2003C. Sets 3 and 4 Wafers 1. Wafers with Siθ2 deposited with TiW/AlCu. 2. Coated with positive photoresist and patterned. 3. Baked at 1803C for 30 minutes. 4a. Set 3: Wafers processed using chlorinated plasma etch process followed by a fluorinated treatment. Set : Wafers ion implanted with As at 150 KeV, at a doping level of 5.0 x 1015.
SUBSTITUTE SHEET Procesε: All wafers were processed through a single bath of each stripper formula, rinsed with deionized water, and manually dried with dry nitrogen gas.
SUBSTITUTESHEET Results For Set 1
Figure imgf000011_0001
Results For Set 2
Stripper Temperature Bath Time Formula Q J (Minutes) Comments 2 90 15 No removal
30 Same.
45
Figure imgf000012_0001
130
90
Figure imgf000012_0002
Figure imgf000012_0003
120 15 Partial reεiεt diεεolution. 30 Complete resist dissolution.
90 15 No removal 30 Same. 45 Same.
100 15 Partial removal with undiεsolved resist in bath.
30 Same. 45 Same. -
110 15 Same as 1003. 30 Complete resist removal with undissolved resiεt in bath.
45 Same. 60 Complete resist dissolution.
SUBSTITUTESHEET Results For Set 3
Stripper Temperature Bath Time
Formula (3C) (Minutes ) Comments 1 90 10 Incomplete strip with undissolved resist in bath.
100 10 Same.
110 10 Same.
(No further testing was completed using Stripper Formula 1 for Set 3 or Set 4)
90 10 Undisεolved resist in both.
Figure imgf000013_0001
130 10 Complete diεεolu¬ tion,
90 10 Undissolved resist in bath.
Figure imgf000013_0002
110
Figure imgf000013_0003
120 10 Partial dissolu¬ tion.
20 Complete dissolu¬ tion^
90 10 Undissolved resiεt in bath. "
20 Same. 30 Same . ■■
100 10 Partial dissolu¬ tion.
20 Same . 30 90% dissolution.
110 10 Complete dissolu¬ tion.
20 Same.
SUBSTITUTESHEET
Figure imgf000014_0001
SUBSTITUTE SHEET The test results above show the following: (1) Stripper Formula 1 is not suitable for the removal of difficult to remove positive photoresiεtε; (2) Stripper Formula 2 did not accomplish total dissolution of photoresist until a temperature greater than 1203C was used. This formula is unsuitable because it has to be used 103 higher than its flash point for εuccesεful results; (3) Stripper Formula 3 also had difficulty in removing the photoresist at temperatures lower than 1203C; (4) Stripper Formula 4 removed the photoresist using a temperature 15 to 203 lower than the other strippers used (i.e. at" 100 to 1153C), and below the products' flash point (1203C). Scanning electron microscope analysis of the wafers verified these results.
Although the present invention has been described in terms of specific embodiments, it is anticipated that alterations and modifications thereof will no doubt become apparent to those skilled in the art. It iε therefore intended that the following claims be interpreted as covering all such alterations and modif- ications as fall within the true spirit and scope of the invention.
SUBSTITUTESHEET

Claims

CLAIMS What iε claimed is: 1. A stripping composition comprising from about 5 to about 100 percent by weight of N-cyclohexyl-2- pyrrolidone.
2. A composition of claim 1 having from about 1 percent to about 95 by weight of an organic polar solvent or mixture thereof.
3. A composition of claim 2 comprising from about 5 to about 80 percent by weight of N-cyclohexyl-2-pyrrolidone and from about 20 to about 95 percent by weight of said organic polar solvent.
4. A composition of claim 2 wherein said organic polar solvent iε selected from the group consisting of N- methyl-2-pyrrolidone, ^ -butylactone, glycol ether, glycol ether acetal, dimethyl formamide, and mixtures thereof.
5. A composition of claim 4 comprising from about 5 to about 80 percent by weight of N-cyclohexyl-2-pyrrolidone and from about 20 to about 95 percent by weight of said organic polar solvent.
6. A composition of claim 1 having from about 20 percent to about 70 percent by weight of an alkaline amine compound or mixtures thereof.
7. A composition of claim 6 wherein said amine is selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, trimethylammonium hydroxide, and mixtures thereof.
SUBSTITUTESHEET
8. A composition of claim 2 having from about 20 percent to about 70 percent by weight of an alkaline amine compound or mixtures thereof.
9. A composition of claim 3 having from about 20 percent to about 70 percent by weight of said amine compound or mixtures thereof.
10. A composition of claim 8, comprising from about 15 to about 25 percent by weight of N-cyclohexyl-2- pyrrolidone, from about 30 to about 50 percent by weight of said organic polar solvent, and from about 30 to about 50 percent by weight of said amine.
11. A composition of claim 8 wherein εaid amine iε selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, trimethylammonium hydroxide, and mixtures thereof, and wherein said organic polar solvent iε selected from the group consiting of N-methyl-2-pyrrolidone, _^ -butylactone, glycol ether, glycol ether acetal, dimethyl forma ide, and mixtures thereof.
12. A composition of claim 9 wherein said amine iε εelected from the group conεiεting of monoethanolamine, triethanolamine, diglycolamine, trimethylammonium hydroxide, and mixtures thereof, and wherein said organic polar solvent is selected from the group consiting of N-methyl-2-pyrrolidone, -butylactone, glycol ether, glycol ether acetal, dimethyl formamide, and mixtures thereof.
SUBSTITUTESHEET
13. A composition of claim 10 wherein said amine iε selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, trimethylammonium hydroxide, and mixtures thereof, and wherein said organic polar solvent is selected from the group consiting of N-methyl-2-pyrrolidone, X -butylactone, glycol ether, glycol ether acetal, dimethyl formamide, and mixtures thereof.
14. A method wherein unexposed photoresiεt is stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 1.
15. A method wherein unexpoεed photoresist is εtripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 2.
16. A method wherein unexposed photoresist iε εtripped from a substrate by contacting the unexposed photoresiεt with a stripping composition the composition of claim 3.
17. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 4.
18. A method wherein unexposed photoresiεt is stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 5.
SUBSTITUTE SHEET
19. A method wherein unexposed photoresist is εtripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 6.
20. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 7.
21. A method wherein unexposed photoresiεt iε εtripped from a substrate by contacting the unexposed photoreεist with a stripping composition the composition of claim 8.
22. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 9.
23. A method wherein unexposed photoresist iε stripped from a substrate by contacting the unexposed photoresiεt with a stripping composition the composition of claim 10.
24. A method wherein unexposed photoresist is stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of 'claim 11.
25. A method wherein unexposed photoresist iε εtripped from a substrate by contacting the unexpoεed photoreεist
SUBSTITUTESHEET with a stripping composition the composition of claim 12.
26. A method wherein unexposed photoresist iε stripped from a substrate by contacting the unexposed photoresist with a stripping composition the composition of claim 13.
SUBSTITUTESHEET
PCT/US1989/003037 1988-07-15 1989-07-12 Stripping composition using n-cyclohexyl-2-pyrrolidone WO1990000579A1 (en)

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US5446094A (en) * 1992-08-21 1995-08-29 Basf Aktiengesellschaft Thermoplastic coupling agent mixture
US6998225B2 (en) * 2002-04-10 2006-02-14 Mitsubishi Denki Kabushiki Kaisha Method of producing compound semiconductor device
WO2012044460A1 (en) * 2010-09-27 2012-04-05 Eastman Chemical Company Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods of using the same
US8309502B2 (en) 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8389455B2 (en) 2009-03-27 2013-03-05 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals

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US4276186A (en) * 1979-06-26 1981-06-30 International Business Machines Corporation Cleaning composition and use thereof
US4453984A (en) * 1982-06-30 1984-06-12 International Business Machines Corporation Method for removing electrically conductive paste from a screening mask
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
US4791043A (en) * 1983-12-20 1988-12-13 Hmc Patents Holding Co., Inc. Positive photoresist stripping composition

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Publication number Priority date Publication date Assignee Title
US3796602A (en) * 1972-02-07 1974-03-12 Du Pont Process for stripping polymer masks from circuit boards
US4276186A (en) * 1979-06-26 1981-06-30 International Business Machines Corporation Cleaning composition and use thereof
US4453984A (en) * 1982-06-30 1984-06-12 International Business Machines Corporation Method for removing electrically conductive paste from a screening mask
US4791043A (en) * 1983-12-20 1988-12-13 Hmc Patents Holding Co., Inc. Positive photoresist stripping composition
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446094A (en) * 1992-08-21 1995-08-29 Basf Aktiengesellschaft Thermoplastic coupling agent mixture
US6998225B2 (en) * 2002-04-10 2006-02-14 Mitsubishi Denki Kabushiki Kaisha Method of producing compound semiconductor device
EP1363167A3 (en) * 2002-04-10 2007-06-06 Mitsubishi Denki Kabushiki Kaisha Method of producing compound semiconductor device
US8309502B2 (en) 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8389455B2 (en) 2009-03-27 2013-03-05 Eastman Chemical Company Compositions and methods for removing organic substances
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