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WO1989005280A1 - Procede de production de fines poudres ceramiques et ses produits - Google Patents

Procede de production de fines poudres ceramiques et ses produits Download PDF

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Publication number
WO1989005280A1
WO1989005280A1 PCT/US1988/004235 US8804235W WO8905280A1 WO 1989005280 A1 WO1989005280 A1 WO 1989005280A1 US 8804235 W US8804235 W US 8804235W WO 8905280 A1 WO8905280 A1 WO 8905280A1
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WO
WIPO (PCT)
Prior art keywords
phase
particles
metal
phase particles
powder
Prior art date
Application number
PCT/US1988/004235
Other languages
English (en)
Inventor
Dennis Charles Nagle
John Michael Brupbacher
Leontios Christodoulou
Original Assignee
Martin Marietta Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Martin Marietta Corporation filed Critical Martin Marietta Corporation
Priority to JP1500600A priority Critical patent/JPH08505350A/ja
Publication of WO1989005280A1 publication Critical patent/WO1989005280A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/32—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process
    • C01B13/322—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state
    • C01B13/324—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state by solid combustion synthesis
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0761—Preparation by direct nitridation of titanium, zirconium or hafnium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0765—Preparation by carboreductive nitridation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/907—Oxycarbides; Sulfocarbides; Mixture of carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/921—Titanium carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/058—Mixtures of metal powder with non-metallic powder by reaction sintering (i.e. gasless reaction starting from a mixture of solid metal compounds)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Products (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Cette invention concerne un procédé de production de matières en fine poudre et ses produits. Le procédé met en oeuvre la précipitation in-situ de particules de seconde phase telles que des céramiques ou des produits intermétalliques, dans une matrice métallique, suivie par la séparation des particules tirées de la matrice afin de produire une poudre comprenant les particules de seconde phase. Les particules formées selon ce procédé ont une taille typiquement comprise entre 0,01 et 10 microns et ont une morphologie régulée, une distribution granulométrique étroite, une stoechiomètrie bien définie et une pureté relativement élevée. On peut citer à titre d'exemple des particules de seconde phase formées selon ce procédé, les borures, les carbures, les nitrures, les oxydes, les siliciures et les alliages de béryl métalliques, comprenant TiB2, ZrB2, VB2, MoB2, TiC, WC, VC, TiN, ZrSi2, MoSi2, Ti5Si3, et TiBe12.
PCT/US1988/004235 1987-11-30 1988-11-28 Procede de production de fines poudres ceramiques et ses produits WO1989005280A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1500600A JPH08505350A (ja) 1987-11-30 1988-11-28 微細セラミックス粉末の鍛造方法及びその生成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12632887A 1987-11-30 1987-11-30
US126,328 1987-11-30

Publications (1)

Publication Number Publication Date
WO1989005280A1 true WO1989005280A1 (fr) 1989-06-15

Family

ID=22424220

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1988/004235 WO1989005280A1 (fr) 1987-11-30 1988-11-28 Procede de production de fines poudres ceramiques et ses produits

Country Status (3)

Country Link
EP (1) EP0397684A1 (fr)
JP (1) JPH08505350A (fr)
WO (1) WO1989005280A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683520A1 (fr) * 1991-11-08 1993-05-14 Max Planck Gesellschaft Particules en forme de plaquettes des composes du type alb2 et w2b5 et leur elaboration.
WO1999047454A1 (fr) * 1998-03-16 1999-09-23 Sep Bienvenu-Lacoste Procede de synthese de ceramiques complexes pulverulentes de metaux refractaires
WO1999067449A1 (fr) * 1998-06-25 1999-12-29 Forschungszentrum Jülich GmbH Production d'une poudre monocristalline et d'une membrane monograin
US7800741B2 (en) 2005-08-22 2010-09-21 Galatea Ltd. Method for evaluation of a gemstone
US8098368B2 (en) 2005-08-22 2012-01-17 Galatea Ltd. Method for evaluation of a gemstone
CN112207285A (zh) * 2020-03-12 2021-01-12 赵远云 粉体材料的制备方法及其应用
CN112355315A (zh) * 2020-11-09 2021-02-12 攀枝花学院 球形铁基碳化钒钛金属陶瓷粉末的制备方法
CN118026653A (zh) * 2024-02-19 2024-05-14 湖南省新化县林海陶瓷有限公司 一种新能源汽车继电器用陶瓷材料及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2960303B1 (fr) * 2010-05-18 2013-04-05 Onectra Appareil de detection de neutrons et procede de depot d'une couche solide de bore pour un tel appareil
JP5780540B2 (ja) * 2010-12-24 2015-09-16 国立研究開発法人物質・材料研究機構 二ホウ化ジルコニウム粉末及びその合成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096149A (en) * 1959-07-16 1963-07-02 Monsanto Chemicals Process for the production of metal borides
US3258316A (en) * 1963-07-29 1966-06-28 M S A Res Corp Preparation of metal borides
US3726643A (en) * 1970-04-09 1973-04-10 I Khim Fiz Akademii Nauk Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system
FR2207194A1 (fr) * 1972-11-17 1974-06-14 Int Nickel Ltd
FR2476139A1 (fr) * 1980-02-20 1981-08-21 Inst Khim Fiz An Sssr Alliage dur sans tungstene et procede d'elaboration de cet alliage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096149A (en) * 1959-07-16 1963-07-02 Monsanto Chemicals Process for the production of metal borides
US3258316A (en) * 1963-07-29 1966-06-28 M S A Res Corp Preparation of metal borides
US3726643A (en) * 1970-04-09 1973-04-10 I Khim Fiz Akademii Nauk Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system
FR2207194A1 (fr) * 1972-11-17 1974-06-14 Int Nickel Ltd
FR2476139A1 (fr) * 1980-02-20 1981-08-21 Inst Khim Fiz An Sssr Alliage dur sans tungstene et procede d'elaboration de cet alliage

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Japanese Journal of Appled Physics, volume 22, no. 9, part I, September 1983, (Tokyo, JP), H. Takei et al.: "Growth of ErRh4B4 single crystals by the flux method", page 1463 *
Journal of Crystal Growth, volume 33, no. 2, May 1976, North-Holland Publishing Company, (Amsterdam, NL), I. Higashi et al.: "Crystal growth of borides and carbides of transiton metals from molten aluminum solutions", pages 207-211 *
Journal of Crystal Growth, volume 62, no. 3, August 1983, North-Holland Publishing Company, (Amsterdam, NL) S. Shimada et al.: "Crystal growth of NbC by method", pages 557-560 *
Materials Research Bulletin, volume 17, no. 11, November 1982, Pergamon Press Ltd, (Clearfield, Pennsylvania, US), M. Bouchacourt et al.: "A new method for growing crystals of SiB2.8-4 type silicon boride from a metallic melt", pages 1353-1358 *
Metal Progress, volume 36, 1939, (Metals Park, Ohio, US), P.M. McKenna: "Hard intermetallic compounds for new metal cutting tools", pages 152-155 *
Russian Chemical Reviews, volume 41, no. 4, 1972, (London, GB), V.N. Gurin: "Methods for the preparation of refractory compounds of transition metals and prospects for their development", pages 323-340 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683520A1 (fr) * 1991-11-08 1993-05-14 Max Planck Gesellschaft Particules en forme de plaquettes des composes du type alb2 et w2b5 et leur elaboration.
WO1999047454A1 (fr) * 1998-03-16 1999-09-23 Sep Bienvenu-Lacoste Procede de synthese de ceramiques complexes pulverulentes de metaux refractaires
WO1999067449A1 (fr) * 1998-06-25 1999-12-29 Forschungszentrum Jülich GmbH Production d'une poudre monocristalline et d'une membrane monograin
US6488770B1 (en) 1998-06-25 2002-12-03 Forschungszentrum Jülich GmbH Monocrystalline powder and monograin membrane production
US7800741B2 (en) 2005-08-22 2010-09-21 Galatea Ltd. Method for evaluation of a gemstone
US8098368B2 (en) 2005-08-22 2012-01-17 Galatea Ltd. Method for evaluation of a gemstone
CN112207285A (zh) * 2020-03-12 2021-01-12 赵远云 粉体材料的制备方法及其应用
CN112355315A (zh) * 2020-11-09 2021-02-12 攀枝花学院 球形铁基碳化钒钛金属陶瓷粉末的制备方法
CN112355315B (zh) * 2020-11-09 2023-04-18 攀枝花学院 球形铁基碳化钒钛金属陶瓷粉末的制备方法
CN118026653A (zh) * 2024-02-19 2024-05-14 湖南省新化县林海陶瓷有限公司 一种新能源汽车继电器用陶瓷材料及其制备方法

Also Published As

Publication number Publication date
JPH08505350A (ja) 1996-06-11
EP0397684A1 (fr) 1990-11-22

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