USB520115I5 - - Google Patents

Info

Publication number: USB520115I5
Authority: US; United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-04-20

Filing date

1974-11-01

Publication date

1976-03-23

1972-04-20 Priority claimed from JP3975972A external-priority patent/JPS5320194B2/ja

1974-11-01 Application filed filed Critical

1974-11-01 Priority to US05/520,115 priority Critical patent/US4003072A/en

1976-03-23 Publication of USB520115I5 publication Critical patent/USB520115I5/en

1977-01-11 Application granted granted Critical

1977-01-11 Publication of US4003072A publication Critical patent/US4003072A/en

1994-01-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

US05/520,115 1972-04-20 1974-11-01 Semiconductor device with high voltage breakdown resistance Expired - Lifetime US4003072A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
US05/520,115 US4003072A (en)	1972-04-20	1974-11-01	Semiconductor device with high voltage breakdown resistance

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JA47-39759		1972-04-20
JP3975972A JPS5320194B2 (fr)	1972-04-20	1972-04-20
US35117273A	1973-04-17	1973-04-17
US05/520,115 US4003072A (en)	1972-04-20	1974-11-01	Semiconductor device with high voltage breakdown resistance

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
US35117273A Continuation	1972-04-20	1973-04-17

Publications (2)

Publication Number	Publication Date
USB520115I5 true USB520115I5 (fr)	1976-03-23
US4003072A US4003072A (en)	1977-01-11

Family

ID=27290261

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
US05/520,115 Expired - Lifetime US4003072A (en)	1972-04-20	1974-11-01	Semiconductor device with high voltage breakdown resistance

Country Status (1)

Country	Link
US (1)	US4003072A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2361750A1 (fr) *	1976-08-09	1978-03-10	Philips Nv	Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur
WO1996026547A1 (fr) *	1995-02-20	1996-08-29	Rohm Co., Ltd.	Dispositif a semiconducteur a anneau de garde, et son procede de fabrication

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SU793421A3 (ru) *	1976-06-02	1980-12-30	Ббц Аг Браун	Фототиристор
US4055884A (en) *	1976-12-13	1977-11-01	International Business Machines Corporation	Fabrication of power field effect transistors and the resulting structures
US4158206A (en) *	1977-02-07	1979-06-12	Rca Corporation	Semiconductor device
CH633907A5 (de) *	1978-10-10	1982-12-31	Bbc Brown Boveri & Cie	Leistungshalbleiterbauelement mit zonen-guard-ringen.
JPS6011815B2 (ja) *	1979-07-09	1985-03-28	三菱電機株式会社	サイリスタ
JPS56126968A (en) *	1980-03-10	1981-10-05	Mitsubishi Electric Corp	Semiconductor device
US4868624A (en) *	1980-05-09	1989-09-19	Regents Of The University Of Minnesota	Channel collector transistor
DE3029553A1 (de) *	1980-08-04	1982-03-11	Siemens AG, 1000 Berlin und 8000 München	Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
US4494134A (en) *	1982-07-01	1985-01-15	General Electric Company	High voltage semiconductor devices comprising integral JFET
GB2131603B (en) *	1982-12-03	1985-12-18	Philips Electronic Associated	Semiconductor devices
US4779126A (en) *	1983-11-25	1988-10-18	International Rectifier Corporation	Optically triggered lateral thyristor with auxiliary region
GB2165090A (en) *	1984-09-26	1986-04-03	Philips Electronic Associated	Improving the field distribution in high voltage semiconductor devices
JPS61158177A (ja) *	1984-12-28	1986-07-17	Toshiba Corp	半導体装置
GB2173037A (en) *	1985-03-29	1986-10-01	Philips Electronic Associated	Semiconductor devices employing conductivity modulation
JPH061831B2 (ja) *	1986-07-08	1994-01-05	株式会社日立製作所	ゲ−トタ−ンオフサイリスタ
JPS63253664A (ja) *	1987-04-10	1988-10-20	Sony Corp	バイポ−ラトランジスタ
EP0450082B1 (fr) *	1989-08-31	2004-04-28	Denso Corporation	Transistor bipolaire a grille isolee
US5218226A (en) *	1989-11-01	1993-06-08	U.S. Philips Corp.	Semiconductor device having high breakdown voltage
US6081009A (en) *	1997-11-10	2000-06-27	Intersil Corporation	High voltage mosfet structure
SE9704149D0 (sv) *	1997-11-13	1997-11-13	Abb Research Ltd	A semiconductor device of SiC and a transistor of SiC having an insulated gate
DE19823944A1 (de)	1998-05-28	1999-12-02	Siemens Ag	Leistungsdioden-Struktur
DE19840032C1 (de) *	1998-09-02	1999-11-18	Siemens Ag	Halbleiterbauelement und Herstellungsverfahren dazu
GB2354879B (en) *	1999-08-11	2004-05-12	Mitel Semiconductor Ltd	A semiconductor device
US6461918B1 (en) *	1999-12-20	2002-10-08	Fairchild Semiconductor Corporation	Power MOS device with improved gate charge performance
JP4635304B2 (ja) *	2000-07-12	2011-02-23	富士電機システムズ株式会社	双方向超接合半導体素子およびその製造方法
US7745289B2 (en) *	2000-08-16	2010-06-29	Fairchild Semiconductor Corporation	Method of forming a FET having ultra-low on-resistance and low gate charge
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US6916745B2 (en) *	2003-05-20	2005-07-12	Fairchild Semiconductor Corporation	Structure and method for forming a trench MOSFET having self-aligned features
US6803626B2 (en)	2002-07-18	2004-10-12	Fairchild Semiconductor Corporation	Vertical charge control semiconductor device
US7132712B2 (en) *	2002-11-05	2006-11-07	Fairchild Semiconductor Corporation	Trench structure having one or more diodes embedded therein adjacent a PN junction
US7345342B2 (en) *	2001-01-30	2008-03-18	Fairchild Semiconductor Corporation	Power semiconductor devices and methods of manufacture
US6677641B2 (en)	2001-10-17	2004-01-13	Fairchild Semiconductor Corporation	Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6818513B2 (en) *	2001-01-30	2004-11-16	Fairchild Semiconductor Corporation	Method of forming a field effect transistor having a lateral depletion structure
US6710403B2 (en) *	2002-07-30	2004-03-23	Fairchild Semiconductor Corporation	Dual trench power MOSFET
US7061066B2 (en) *	2001-10-17	2006-06-13	Fairchild Semiconductor Corporation	Schottky diode using charge balance structure
US6819089B2 (en) *	2001-11-09	2004-11-16	Infineon Technologies Ag	Power factor correction circuit with high-voltage semiconductor component
US6828609B2 (en) *	2001-11-09	2004-12-07	Infineon Technologies Ag	High-voltage semiconductor component
KR100859701B1 (ko) *	2002-02-23	2008-09-23	페어차일드코리아반도체 주식회사	고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US7576388B1 (en)	2002-10-03	2009-08-18	Fairchild Semiconductor Corporation	Trench-gate LDMOS structures
US7033891B2 (en) *	2002-10-03	2006-04-25	Fairchild Semiconductor Corporation	Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en)	2002-10-11	2004-03-23	Fairchild Semiconductor Corporation	Schottky rectifier with insulation-filled trenches and method of forming the same
DE602004018614D1 (de) *	2003-02-18	2009-02-05	Nxp Bv	Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements
US7652326B2 (en)	2003-05-20	2010-01-26	Fairchild Semiconductor Corporation	Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) *	2003-11-28	2010-11-16	페어차일드코리아반도체 주식회사	슈퍼정션 반도체장치
US7368777B2 (en)	2003-12-30	2008-05-06	Fairchild Semiconductor Corporation	Accumulation device with charge balance structure and method of forming the same
US20050199918A1 (en) *	2004-03-15	2005-09-15	Daniel Calafut	Optimized trench power MOSFET with integrated schottky diode
US7352036B2 (en)	2004-08-03	2008-04-01	Fairchild Semiconductor Corporation	Semiconductor power device having a top-side drain using a sinker trench
EP1790013A1 (fr) *	2004-08-31	2007-05-30	Freescale Semiconductor, Inc.	Dispositif de puissance a semi-conducteurs
US7265415B2 (en) *	2004-10-08	2007-09-04	Fairchild Semiconductor Corporation	MOS-gated transistor with reduced miller capacitance
KR20120127677A (ko) *	2005-04-06	2012-11-22	페어차일드 세미컨덕터 코포레이션	트랜치-게이트 전계효과 트랜지스터 및 그 형성 방법
US7385248B2 (en)	2005-08-09	2008-06-10	Fairchild Semiconductor Corporation	Shielded gate field effect transistor with improved inter-poly dielectric
US7446374B2 (en)	2006-03-24	2008-11-04	Fairchild Semiconductor Corporation	High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en)	2006-06-19	2008-01-15	Fairchild Semiconductor Corporation	Shielded gate trench FET with the shield and gate electrodes being connected together
US8928077B2 (en) *	2007-09-21	2015-01-06	Fairchild Semiconductor Corporation	Superjunction structures for power devices
US7772668B2 (en)	2007-12-26	2010-08-10	Fairchild Semiconductor Corporation	Shielded gate trench FET with multiple channels
US20120273916A1 (en)	2011-04-27	2012-11-01	Yedinak Joseph A	Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en)	2008-12-08	2012-05-08	Fairchild Semiconductor Corporation	Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8154078B2 (en) *	2010-02-17	2012-04-10	Vanguard International Semiconductor Corporation	Semiconductor structure and fabrication method thereof
US8319290B2 (en)	2010-06-18	2012-11-27	Fairchild Semiconductor Corporation	Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8487371B2 (en)	2011-03-29	2013-07-16	Fairchild Semiconductor Corporation	Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8673700B2 (en)	2011-04-27	2014-03-18	Fairchild Semiconductor Corporation	Superjunction structures for power devices and methods of manufacture
US8772868B2 (en)	2011-04-27	2014-07-08	Fairchild Semiconductor Corporation	Superjunction structures for power devices and methods of manufacture
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US8872278B2 (en)	2011-10-25	2014-10-28	Fairchild Semiconductor Corporation	Integrated gate runner and field implant termination for trench devices
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1974
- 1974-11-01 US US05/520,115 patent/US4003072A/en not_active Expired - Lifetime

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2361750A1 (fr) *	1976-08-09	1978-03-10	Philips Nv	Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur
WO1996026547A1 (fr) *	1995-02-20	1996-08-29	Rohm Co., Ltd.	Dispositif a semiconducteur a anneau de garde, et son procede de fabrication
US5841181A (en) *	1995-02-20	1998-11-24	Rohm Co., Ltd.	Semiconductor apparatus having field limiting rings

Also Published As

Publication number	Publication date
US4003072A (en)	1977-01-11

Publication	Publication Date	Title
USB520115I5 (fr)	1976-03-23
FR2200047A1 (fr)	1974-04-19
FR2184326A5 (fr)	1973-12-21
JPS4944538A (fr)	1974-04-26
JPS5738617Y2 (fr)	1982-08-25
JPS4927879A (fr)	1974-03-12
CH577923A5 (fr)	1976-07-30
CH577087A5 (fr)	1976-06-30
CH560467A5 (fr)	1975-03-27
NL7301136A (fr)	1973-07-31
CH560380A5 (fr)	1975-03-27
CH560056A5 (fr)	1975-03-27
CH560635A5 (fr)	1975-04-15
CH560039A5 (fr)	1975-03-27
CH545908A (fr)	1974-02-15
CH16372A4 (fr)	1974-05-15
CH1043973A4 (fr)	1976-08-31
BG20480A1 (fr)	1975-12-05
BG20015A1 (fr)	1975-10-30
BG20008A1 (fr)	1975-10-30
BG19955A1 (fr)	1975-10-30
CH560851A5 (fr)	1975-04-15
PL76634B1 (fr)	1975-02-28
CH560888A5 (fr)	1975-04-15
CH576319A5 (fr)	1976-06-15