+

US9726753B2 - Circuit configuration for radar applications - Google Patents

Circuit configuration for radar applications Download PDF

Info

Publication number
US9726753B2
US9726753B2 US14/117,147 US201214117147A US9726753B2 US 9726753 B2 US9726753 B2 US 9726753B2 US 201214117147 A US201214117147 A US 201214117147A US 9726753 B2 US9726753 B2 US 9726753B2
Authority
US
United States
Prior art keywords
oscillator
printed board
integrated circuit
phase
semiconductor modules
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related, expires
Application number
US14/117,147
Other versions
US20150002330A1 (en
Inventor
Thomas Binzer
Oliver Brueggmann
Christian Waldschmidt
Dirk Steinbuch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Assigned to ROBERT BOSCH GMBH reassignment ROBERT BOSCH GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WALDSCHMIDT, CHRISTIAN, BINZER, THOMAS, BRUEGGEMANN, OLIVER, STEINBUCH, DICK
Publication of US20150002330A1 publication Critical patent/US20150002330A1/en
Application granted granted Critical
Publication of US9726753B2 publication Critical patent/US9726753B2/en
Expired - Fee Related legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/03Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
    • G01S7/032Constructional details for solid-state radar subsystems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19Manufacturing methods of high density interconnect preforms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/88Radar or analogous systems specially adapted for specific applications
    • G01S13/93Radar or analogous systems specially adapted for specific applications for anti-collision purposes
    • G01S13/931Radar or analogous systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/88Radar or analogous systems specially adapted for specific applications
    • G01S13/93Radar or analogous systems specially adapted for specific applications for anti-collision purposes
    • G01S13/931Radar or analogous systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G01S2013/9321Velocity regulation, e.g. cruise control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6661High-frequency adaptations for passive devices
    • H01L2223/6677High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect

Definitions

  • the present invention relates to a circuit configuration for radar applications, in particular motor vehicle radar applications.
  • the present invention further relates to a radar sensor having such a circuit configuration as well as a motor vehicle radar system having a circuit configuration of this type.
  • Radar sensors are used for measuring the distance and/or speed of objects.
  • radar systems are known in which speeds and distances of multiple objects are detected simultaneously.
  • vehicle speed regulators are known for motor vehicles having a radar system for locating a preceding vehicle and for measuring the distance to same.
  • Such a distance regulating system is also referred to as an ACC (adaptive cruise control) system.
  • Radar systems which form distributor networks to antenna elements on HF substrates.
  • German patent document DE 10 2007 051 875 A1 discusses an HF assembly having a printed board unit having a carrier onto which HF chips of HF chip modules are mounted. Multiple antenna devices may be situated centrally on the front side of each HF chip. On both narrow sides of the front side of the HF chip are located two rows of contact surfaces, which are used to conductively connect the HF chip to contacts of the substrate of the HF chip module. Assembly takes place using flip-chip technology. The substrates of the chip modules are in turn connected to terminal areas of the printed board unit.
  • integrated microwave circuits of the type MMIC microwave monolithic integrated circuit
  • Wafer assemblies are known in which the assembly is manufactured having a rewiring layer for an IC component at the wafer level.
  • Such a wafer assembly is also referred to as an embedded grid array at the wafer level (eWLB, embedded wafer level ball grid array).
  • German patent document DE 10 2010 001 407 A1 discusses a semiconductor module in which antennas are integrated at the wafer level.
  • the semiconductor module includes a first housing mold compound layer and an IC component having an integrated circuit that is embedded in the first housing mold compound layer.
  • An intermediate layer includes a rewiring layer, which is connected to the IC component and is used to connect the IC component externally.
  • An integrated antenna structure is situated within the intermediate layer and is connected to the IC component.
  • Such a semiconductor module may be manufactured with a precision suitable for the high-frequency range, for example, 77 GHz.
  • Such an eWLB semiconductor module having antennas integrated into the housing is also referred to as antenna in package (AiP).
  • AuP antenna in package
  • the spatial extension of the semiconductor module having an integrated circuit and antennas may not be of arbitrary size. For that reason, only one or a few antenna elements may be accommodated in the eWLB semiconductor module.
  • the object of the present invention is to provide a novel circuit configuration for radar applications which makes it possible to design a radar sensor having a larger aperture.
  • this object is achieved by a circuit configuration for radar applications having a printed board and semiconductor modules mounted on it, each of the semiconductor modules having an integrated circuit, a rewiring layer for connecting the integrated circuit to the printed board and at least one antenna element integrated into the semiconductor module and connected to the integrated circuit for transmitting and/or receiving radar signals, the integrated circuit including at least one HF oscillator and a frequency splitter connected to the HF oscillator, the circuit configuration including phase-locked loops for controlling the HF oscillators, each of the phase-locked loops having the frequency splitter and a phase detector for comparing a split-frequency signal of the HF oscillator with a reference signal, and it being possible for the reference signals to be fed to the phase-locked loops via the printed board.
  • the frequency splitter of which is formed in each case in the integrated circuit of the semiconductor module By controlling the HF oscillators of the semiconductor modules via phase-locked loops, the frequency splitter of which is formed in each case in the integrated circuit of the semiconductor module, it is possible to couple, in particular to synchronize, the HF oscillators of the semiconductor modules via reference signals of lower frequency, in particular without the need for an HF signal to be conducted on the printed board. It is thus possible to design the printed board without an HF substrate. This simplifies the design of the circuit configuration considerably, and it is significantly more cost-effective to manufacture.
  • the integration of the antenna elements into the semiconductor modules results in a particularly efficient and reliable design. It is in particular advantageous that it is possible to couple multiple semiconductor modules having eWLB housings to integrated antennas, it being possible to integrate all high-frequency-conducting components into the particular semiconductor modules.
  • the HF oscillators are in particular oscillators for generating frequencies in the microwave range, i.e., decimeter, centimeter, and/or millimeter waves.
  • phase-locked loops and, accordingly, the HF oscillators, may be coupled via the reference signals which may be fed to them via the printed board.
  • Apertures, which exceed the extension of a semiconductor module, may be implemented using multiple RF oscillators coupled to particular antenna elements.
  • coupled reference signals may be provided for the phase-locked loops, in particular reference signals based on a common reference signal.
  • the common reference signal may have a frequency below 1 MHz, which may be below 100 kHz.
  • the phase-locked loops may be coupled via a common reference signal which may be fed to them via the printed board.
  • the reference signals of the phase-locked loops are thus formed in each case by the common reference signal.
  • the semiconductor modules may each have a wafer unit and an interface layer, the wafer unit having a semiconductor chip forming the integrated circuit, and having a housing layer in which the semiconductor chip is embedded, and the interface layer having the rewiring layer, which connects the integrated circuit to terminals of the interface layer connected to the printed board.
  • the semiconductor module may be an eWLB package.
  • the at least one antenna element may be situated in the interface layer.
  • the antenna element may be manufactured in one method step together with the rewiring layer.
  • the at least one antenna element is, for example, situated in the rewiring layer.
  • the at least one antenna element may be offset laterally with respect to the semiconductor chip.
  • the at least one antenna element is situated in an area outside of the semiconductor chip in the interface layer laterally offset with respect to the semiconductor chip.
  • the wafer unit and the interface layer for example, extend in parallel, the interface layer extending across an area of the semiconductor chip and across an area outside of the semiconductor chip.
  • the circuit configuration has an oscillator situated on the printed board for generating a reference signal, in particular a common reference signal.
  • the reference signal may be fed to the phase-locked loops via the printed board.
  • the oscillator may be a crystal oscillator.
  • the oscillator is an oscillator circuit including an oscillating crystal. This makes it possible to achieve a high level of consistency of the reference signal.
  • multiple semiconductor modules are situated in a regular pattern in one row on the printed board. This makes it possible to achieve a locally distributed positioning of the antenna elements integrated into the semiconductor modules.
  • FIG. 1 shows a schematic representation of a circuit configuration of a radar sensor having a monostatic antenna concept.
  • FIG. 2 shows a schematic cross-sectional view of a semiconductor module of the circuit configuration.
  • FIG. 3 shows a schematic representation of the design of a radar sensor of a motor vehicle radar system having antenna elements situated in series and a dielectric lens.
  • FIG. 4 shows a schematic representation of a matrix system of antenna elements.
  • FIG. 5 shows a schematic view of one specific embodiment of a circuit configuration having a bistatic antenna concept.
  • FIG. 1 schematically shows a circuit configuration having multiple semiconductor modules 10 , one of which is shown in cross section in FIG. 2 .
  • Semiconductor modules 10 are, for example, mounted in one row on a printed board 12 .
  • FIG. 1 two of semiconductor modules 10 are shown as examples.
  • Each of semiconductor modules 10 includes an integrated antenna element 14 and an integrated circuit 16 in the form of a semiconductor chip.
  • the antenna element is, for example, a patch element which is used for transmitting and receiving a radar signal in the example shown.
  • Integrated circuit 16 includes the HF component of a transmission and reception circuit and is connected to antenna element 14 .
  • integrated circuit 16 includes an HF oscillator 18 for generating a radar signal for emission by antenna element 14 . Furthermore, in a known manner, integrated circuit 16 includes a mixer 20 for mixing the received radar signal with the transmitted signal. Antenna element 14 is, for example, connected via a coupler 21 in the form of a rat-race ring to oscillator 18 and mixer 20 in order to separate the transmission and reception signals. The mixed HF signal is, for example, filtered and fed to an A/D converter 22 for further processing. Integrated circuit 16 is a so-called MMIC chip (monolithic microwave integrated circuit).
  • controllable HF oscillator 18 is regulated using a phase-locked loop 24 which includes a frequency splitter 26 , a phase discriminator or phase detector 28 and a loop filter or regulating filter 30 .
  • HF oscillator 18 is a voltage-controlled oscillator (VCO).
  • VCO voltage-controlled oscillator
  • Oscillator 34 is a crystal oscillator that includes an oscillating crystal.
  • Phase-locked loops 24 are coupled together by the common reference signal. In the example described, they are synchronized in particular, so that HF oscillators 18 oscillate synchronously.
  • Particular phase detector 28 compares the signal of the HF oscillator which is divided down by frequency splitter 26 using the reference signal supplied via conductor structure 32 .
  • Regulating filter 30 converts the output signal of phase detector 28 into a control signal for controllable HF oscillator 18 .
  • integrated circuit 16 includes all the HF-conducting components assigned to particular antenna element 14 .
  • integrated circuit 16 also includes frequency splitter 26 and mixer 20 .
  • particular antenna elements 14 and coupler 21 are integrated into semiconductor modules 10 .
  • Printed board 12 may therefore be an ordinary printed board without an HF substrate.
  • FIG. 2 schematically shows the design of one of semiconductor modules 10 .
  • Semiconductor module 10 is a so-called eWLB package, in which a wafer unit includes the semiconductor chip which forms integrated circuit 16 and a housing mold compound layer which forms a housing layer 38 , into which the semiconductor chip is embedded.
  • This wafer unit 36 which is assembled during manufacturing, is also referred to as a reconstituted wafer. It is provided with an interface layer 40 which has a rewiring layer 42 and terminals 44 in the form of 3D connecting structures, in particular solder balls.
  • the rewiring layer has contact points on a first side, which contact the contact points of wafer unit 36 . On a second side, the rewiring layer is connected to terminals 44 for external contacting.
  • integrated circuit 16 is connected to terminals 44 of interface layer 40 which are connected to printed board 12 .
  • FIG. 2 shows as an example four terminals 44 which are connected to printed conductor tracks on printed board 12 .
  • Semiconductor module 10 may be mounted onto printed board 12 using standard processes, in particular surface mount processes.
  • antenna element 14 is integrated into interface layer 40 , and connected to integrated circuit 16 via coupler 21 which is also integrated into the interface layer.
  • coupler 21 is also integrated into the semiconductor chip of integrated circuit 16
  • integrated circuit 16 may include coupler 21 .
  • Antenna element 14 is laterally offset with respect to the semiconductor chip and thus lies in the area adjacent to housing layer 38 , outside of an area of interface layer 40 which is adjacent to the semiconductor chip.
  • a main emission direction of antenna element 14 perpendicular to wafer unit 36 is shown in FIG. 2 as a dashed line.
  • printed board 12 is provided with a reflector 46 in the form of a conductive area.
  • Antenna element 14 is connected via coupler 21 to the semiconductor chip via contact points on the first side of rewiring layer 42 .
  • This circuit configuration makes it possible to implement a radar front end of a radar sensor without an HF substrate, since only the low-frequency portion of the phase-locked loop is located along with the other circuit elements on printed board 12 , while the high-frequency circuit components are integrated into semiconductor modules 10 .
  • FIG. 3 schematically shows a radar sensor having a one-row arrangement of antenna elements 14 of the circuit configuration from FIG. 1 .
  • Antenna elements 14 are situated in front of a beam forming device 48 in the form of a dielectric cylindrical lens having a circular-segment-shaped cross section.
  • Antenna elements 14 are situated side by side in the transverse direction (Y-direction) and have a main emission direction in the direction of the lens (the X direction).
  • the lens causes a bundling or focusing of the radar signal in the vertical direction (Z-direction), i.e., relating to the elevation.
  • the beam forming device may contain other dielectric elements or lenses, for example, for azimuthal focusing of the radar signal in the Y direction.
  • FIG. 4 shows a variant in which the semiconductor modules and hence antenna elements 14 form a matrix system on printed board 12 .
  • Antenna elements 14 are situated at regular intervals in rows and columns in the Y direction and the Z direction.
  • the above-described circuit configuration makes it possible to synchronize the phase position of antenna elements 14 in relation to one another, so that in a manner known per se, inferences may be drawn concerning the direction of an object reflecting the radar signal, for example, from the phase position of the received signals.
  • FIG. 1 shows a monostatic circuit configuration in which antenna elements 14 each act as a transmitting antenna and as a receiving antenna
  • FIG. 5 shows an example of a bistatic circuit configuration in which separate semiconductor modules 50 having transmitting antenna elements 14 and semiconductor modules 60 having receiving antenna elements 14 are provided, in each case without a coupler 21 .
  • the circuit configuration corresponds to the circuit configuration described with reference to FIG. 1 , and semiconductor modules 50 , 60 are configured similarly to circuit modules 10 .
  • mixer 20 is provided only in receiving semiconductor module 60 .
  • multiple transmitting semiconductor modules 50 are situated in one row, and multiple receiving semiconductor modules 60 are situated in parallel to them in one row.
  • transmitting semiconductor modules 50 each include an antenna element 14 and an integrated circuit 56 in the form of a semiconductor chip, which includes HF oscillator 18 and frequency splitter 26 .
  • Receiving semiconductor modules 60 each include an antenna element 14 and an integrated circuit 66 in the form of a semiconductor chip, which includes HF oscillator 18 , frequency splitter 26 and mixer 20 .
  • the radar sensor having one of the above-described circuit configurations is, for example, a component of a motor vehicle radar system, in particular of a motor vehicle radar system for driver assistance.
  • a common reference signal is fed to phase-locked loops 24 via conductor structure 32 , the common reference signal being used directly for activating frequency splitter 28 in order to synchronize HF oscillators 18 with one another.
  • a coupling in particular a defined phase relationship between HF oscillators 18 in the same or different oscillation frequencies, may be caused, for example, by supplying the common reference signal to phase detector 28 via a frequency splitter and/or a mixer.
  • reference signals provided with a frequency offset may be fed to the individual phase-locked loops.
  • the reference signals are based on the common reference signal. It is also conceivable to provide multiple coupled oscillators 34 for supplying the particular phase-locked loops via appropriate conductor structures 32 .
  • the antenna elements are patch elements. However, it is also possible to provide antenna elements in the form of electric dipoles, for example, printed dipoles, or magnetic dipoles.

Landscapes

  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

A circuit configuration for radar applications having a printed board and semiconductor modules mounted on it, each of the semiconductor modules including an integrated circuit, a rewiring layer for connecting the integrated circuit to the printed board and at least one antenna element integrated into the semiconductor module and connected to the integrated circuit for transmitting and/or receiving radar signals, the integrated circuit including at least one HF oscillator and a frequency splitter connected to the HF oscillator, the circuit configuration including phase-locked loops for controlling the HF oscillators, each of the phase-locked loops having the frequency splitter and a phase detector for comparing a split-frequency signal of the HF oscillator with a reference signal, and the reference signals may be fed to the phase-locked loops via the printed board.

Description

FIELD OF THE INVENTION
The present invention relates to a circuit configuration for radar applications, in particular motor vehicle radar applications. The present invention further relates to a radar sensor having such a circuit configuration as well as a motor vehicle radar system having a circuit configuration of this type.
BACKGROUND INFORMATION
Radar sensors are used for measuring the distance and/or speed of objects. In particular, radar systems are known in which speeds and distances of multiple objects are detected simultaneously. For example, vehicle speed regulators are known for motor vehicles having a radar system for locating a preceding vehicle and for measuring the distance to same. Such a distance regulating system is also referred to as an ACC (adaptive cruise control) system.
Radar systems are known which form distributor networks to antenna elements on HF substrates.
German patent document DE 10 2007 051 875 A1 discusses an HF assembly having a printed board unit having a carrier onto which HF chips of HF chip modules are mounted. Multiple antenna devices may be situated centrally on the front side of each HF chip. On both narrow sides of the front side of the HF chip are located two rows of contact surfaces, which are used to conductively connect the HF chip to contacts of the substrate of the HF chip module. Assembly takes place using flip-chip technology. The substrates of the chip modules are in turn connected to terminal areas of the printed board unit.
To simplify the design of HF circuits for radar applications, integrated microwave circuits of the type MMIC (microwave monolithic integrated circuit) are increasingly being used for the transmission and reception circuits.
Wafer assemblies are known in which the assembly is manufactured having a rewiring layer for an IC component at the wafer level. Such a wafer assembly is also referred to as an embedded grid array at the wafer level (eWLB, embedded wafer level ball grid array).
German patent document DE 10 2010 001 407 A1 discusses a semiconductor module in which antennas are integrated at the wafer level. The semiconductor module includes a first housing mold compound layer and an IC component having an integrated circuit that is embedded in the first housing mold compound layer. An intermediate layer includes a rewiring layer, which is connected to the IC component and is used to connect the IC component externally. An integrated antenna structure is situated within the intermediate layer and is connected to the IC component. Such a semiconductor module may be manufactured with a precision suitable for the high-frequency range, for example, 77 GHz.
Such an eWLB semiconductor module having antennas integrated into the housing is also referred to as antenna in package (AiP).
SUMMARY OF THE INVENTION
In a eWLB semiconductor module having an integrated circuit and integrated antennas, for reasons of reliability and manufacturability, the spatial extension of the semiconductor module having an integrated circuit and antennas may not be of arbitrary size. For that reason, only one or a few antenna elements may be accommodated in the eWLB semiconductor module.
For the design of automotive radar sensors having a long range, apertures of the antenna structures are needed, which cannot be implemented within such a semiconductor module due to the limitation of the size of an eWLB semiconductor module.
The object of the present invention is to provide a novel circuit configuration for radar applications which makes it possible to design a radar sensor having a larger aperture.
According to the present invention, this object is achieved by a circuit configuration for radar applications having a printed board and semiconductor modules mounted on it, each of the semiconductor modules having an integrated circuit, a rewiring layer for connecting the integrated circuit to the printed board and at least one antenna element integrated into the semiconductor module and connected to the integrated circuit for transmitting and/or receiving radar signals, the integrated circuit including at least one HF oscillator and a frequency splitter connected to the HF oscillator, the circuit configuration including phase-locked loops for controlling the HF oscillators, each of the phase-locked loops having the frequency splitter and a phase detector for comparing a split-frequency signal of the HF oscillator with a reference signal, and it being possible for the reference signals to be fed to the phase-locked loops via the printed board.
By controlling the HF oscillators of the semiconductor modules via phase-locked loops, the frequency splitter of which is formed in each case in the integrated circuit of the semiconductor module, it is possible to couple, in particular to synchronize, the HF oscillators of the semiconductor modules via reference signals of lower frequency, in particular without the need for an HF signal to be conducted on the printed board. It is thus possible to design the printed board without an HF substrate. This simplifies the design of the circuit configuration considerably, and it is significantly more cost-effective to manufacture. In addition, the integration of the antenna elements into the semiconductor modules results in a particularly efficient and reliable design. It is in particular advantageous that it is possible to couple multiple semiconductor modules having eWLB housings to integrated antennas, it being possible to integrate all high-frequency-conducting components into the particular semiconductor modules.
The HF oscillators are in particular oscillators for generating frequencies in the microwave range, i.e., decimeter, centimeter, and/or millimeter waves.
For example, the phase-locked loops, and, accordingly, the HF oscillators, may be coupled via the reference signals which may be fed to them via the printed board. Apertures, which exceed the extension of a semiconductor module, may be implemented using multiple RF oscillators coupled to particular antenna elements.
For example, coupled reference signals may be provided for the phase-locked loops, in particular reference signals based on a common reference signal. The common reference signal may have a frequency below 1 MHz, which may be below 100 kHz.
The phase-locked loops may be coupled via a common reference signal which may be fed to them via the printed board. The reference signals of the phase-locked loops are thus formed in each case by the common reference signal.
The semiconductor modules may each have a wafer unit and an interface layer, the wafer unit having a semiconductor chip forming the integrated circuit, and having a housing layer in which the semiconductor chip is embedded, and the interface layer having the rewiring layer, which connects the integrated circuit to terminals of the interface layer connected to the printed board. In particular, the semiconductor module may be an eWLB package.
The at least one antenna element may be situated in the interface layer. For example, the antenna element may be manufactured in one method step together with the rewiring layer. The at least one antenna element is, for example, situated in the rewiring layer.
The at least one antenna element may be offset laterally with respect to the semiconductor chip. For example, the at least one antenna element is situated in an area outside of the semiconductor chip in the interface layer laterally offset with respect to the semiconductor chip. The wafer unit and the interface layer, for example, extend in parallel, the interface layer extending across an area of the semiconductor chip and across an area outside of the semiconductor chip.
In one exemplary embodiment, the circuit configuration has an oscillator situated on the printed board for generating a reference signal, in particular a common reference signal. The reference signal may be fed to the phase-locked loops via the printed board. The oscillator may be a crystal oscillator. For example, the oscillator is an oscillator circuit including an oscillating crystal. This makes it possible to achieve a high level of consistency of the reference signal.
In one exemplary embodiment, multiple semiconductor modules are situated in a regular pattern in one row on the printed board. This makes it possible to achieve a locally distributed positioning of the antenna elements integrated into the semiconductor modules.
Exemplary embodiments of the present invention will be elucidated in the following with reference to the drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a schematic representation of a circuit configuration of a radar sensor having a monostatic antenna concept.
FIG. 2 shows a schematic cross-sectional view of a semiconductor module of the circuit configuration.
FIG. 3 shows a schematic representation of the design of a radar sensor of a motor vehicle radar system having antenna elements situated in series and a dielectric lens.
FIG. 4 shows a schematic representation of a matrix system of antenna elements.
FIG. 5 shows a schematic view of one specific embodiment of a circuit configuration having a bistatic antenna concept.
DETAILED DESCRIPTION
FIG. 1 schematically shows a circuit configuration having multiple semiconductor modules 10, one of which is shown in cross section in FIG. 2. Semiconductor modules 10 are, for example, mounted in one row on a printed board 12. In FIG. 1, two of semiconductor modules 10 are shown as examples.
Each of semiconductor modules 10 includes an integrated antenna element 14 and an integrated circuit 16 in the form of a semiconductor chip. The antenna element is, for example, a patch element which is used for transmitting and receiving a radar signal in the example shown. Integrated circuit 16 includes the HF component of a transmission and reception circuit and is connected to antenna element 14.
In particular, integrated circuit 16 includes an HF oscillator 18 for generating a radar signal for emission by antenna element 14. Furthermore, in a known manner, integrated circuit 16 includes a mixer 20 for mixing the received radar signal with the transmitted signal. Antenna element 14 is, for example, connected via a coupler 21 in the form of a rat-race ring to oscillator 18 and mixer 20 in order to separate the transmission and reception signals. The mixed HF signal is, for example, filtered and fed to an A/D converter 22 for further processing. Integrated circuit 16 is a so-called MMIC chip (monolithic microwave integrated circuit).
The frequency and phase position of controllable HF oscillator 18 is regulated using a phase-locked loop 24 which includes a frequency splitter 26, a phase discriminator or phase detector 28 and a loop filter or regulating filter 30. For example, HF oscillator 18 is a voltage-controlled oscillator (VCO). Via a conductor structure 32 on printed board 12, a common reference signal from an oscillator 34 is fed to phase detectors 28 of the particular phase control circuits. Oscillator 34 is a crystal oscillator that includes an oscillating crystal. Phase-locked loops 24 are coupled together by the common reference signal. In the example described, they are synchronized in particular, so that HF oscillators 18 oscillate synchronously. Particular phase detector 28 compares the signal of the HF oscillator which is divided down by frequency splitter 26 using the reference signal supplied via conductor structure 32. Regulating filter 30 converts the output signal of phase detector 28 into a control signal for controllable HF oscillator 18.
As an option, except for the rat-race ring of coupler 21, integrated circuit 16 includes all the HF-conducting components assigned to particular antenna element 14. In particular, in addition to HF oscillator 18, integrated circuit 16 also includes frequency splitter 26 and mixer 20. As described below, particular antenna elements 14 and coupler 21 are integrated into semiconductor modules 10. Thus, all high-frequency processing circuit components of the circuit configuration, including the high-frequency processing circuit components of the phase-locked loops, may be integrated into semiconductor modules 10. Printed board 12 may therefore be an ordinary printed board without an HF substrate. This is made possible since, on the one hand, only a low-frequency signal is required for coupling the phase-locked loops, and since on the other hand both the antenna elements and the HF-conducting circuit components, including frequency splitter 26, are integrated into the particular semiconductor modules.
FIG. 2 schematically shows the design of one of semiconductor modules 10.
Semiconductor module 10 is a so-called eWLB package, in which a wafer unit includes the semiconductor chip which forms integrated circuit 16 and a housing mold compound layer which forms a housing layer 38, into which the semiconductor chip is embedded. This wafer unit 36, which is assembled during manufacturing, is also referred to as a reconstituted wafer. It is provided with an interface layer 40 which has a rewiring layer 42 and terminals 44 in the form of 3D connecting structures, in particular solder balls. The rewiring layer has contact points on a first side, which contact the contact points of wafer unit 36. On a second side, the rewiring layer is connected to terminals 44 for external contacting. In this way, integrated circuit 16 is connected to terminals 44 of interface layer 40 which are connected to printed board 12. FIG. 2 shows as an example four terminals 44 which are connected to printed conductor tracks on printed board 12. Semiconductor module 10 may be mounted onto printed board 12 using standard processes, in particular surface mount processes.
In addition, antenna element 14 is integrated into interface layer 40, and connected to integrated circuit 16 via coupler 21 which is also integrated into the interface layer. In particular, antenna element 14 and coupler 21 as a part of rewiring layer 42 are integrated into the interface layer. Diverging, however, from the representation shown in FIG. 1, coupler 21 may also be integrated into the semiconductor chip of integrated circuit 16, and integrated circuit 16 may include coupler 21.
Antenna element 14 is laterally offset with respect to the semiconductor chip and thus lies in the area adjacent to housing layer 38, outside of an area of interface layer 40 which is adjacent to the semiconductor chip. A main emission direction of antenna element 14 perpendicular to wafer unit 36 is shown in FIG. 2 as a dashed line. On the opposite side, printed board 12 is provided with a reflector 46 in the form of a conductive area. Antenna element 14 is connected via coupler 21 to the semiconductor chip via contact points on the first side of rewiring layer 42. The integration of antenna element 14 into the semiconductor module manufactured at the wafer level with antenna in the housing (antenna in package, AiP) makes a precise connection of the antenna element possible, so that particularly efficient manufacturing is made possible. In particular in contrast to conventional antenna patches, which are to be connected to an HF circuit externally, the need for an HF substrate on the printed board is eliminated. Nonetheless, the described coupled phase-locked loops of HF oscillators 18 make it possible to achieve a defined phase relationship of the radar signals emitted by antenna elements 14.
This circuit configuration makes it possible to implement a radar front end of a radar sensor without an HF substrate, since only the low-frequency portion of the phase-locked loop is located along with the other circuit elements on printed board 12, while the high-frequency circuit components are integrated into semiconductor modules 10.
FIG. 3 schematically shows a radar sensor having a one-row arrangement of antenna elements 14 of the circuit configuration from FIG. 1. Antenna elements 14 are situated in front of a beam forming device 48 in the form of a dielectric cylindrical lens having a circular-segment-shaped cross section. Antenna elements 14 are situated side by side in the transverse direction (Y-direction) and have a main emission direction in the direction of the lens (the X direction). The lens causes a bundling or focusing of the radar signal in the vertical direction (Z-direction), i.e., relating to the elevation.
In a manner known per se, the beam forming device may contain other dielectric elements or lenses, for example, for azimuthal focusing of the radar signal in the Y direction.
FIG. 4 shows a variant in which the semiconductor modules and hence antenna elements 14 form a matrix system on printed board 12. Antenna elements 14 are situated at regular intervals in rows and columns in the Y direction and the Z direction.
In the exemplary embodiments of FIGS. 3 and 4, the above-described circuit configuration makes it possible to synchronize the phase position of antenna elements 14 in relation to one another, so that in a manner known per se, inferences may be drawn concerning the direction of an object reflecting the radar signal, for example, from the phase position of the received signals.
While FIG. 1 shows a monostatic circuit configuration in which antenna elements 14 each act as a transmitting antenna and as a receiving antenna, FIG. 5 shows an example of a bistatic circuit configuration in which separate semiconductor modules 50 having transmitting antenna elements 14 and semiconductor modules 60 having receiving antenna elements 14 are provided, in each case without a coupler 21. In other respects, the circuit configuration corresponds to the circuit configuration described with reference to FIG. 1, and semiconductor modules 50, 60 are configured similarly to circuit modules 10. In this case, for example, mixer 20 is provided only in receiving semiconductor module 60. For example, multiple transmitting semiconductor modules 50 are situated in one row, and multiple receiving semiconductor modules 60 are situated in parallel to them in one row. In turn, all high-frequency-carrying components are integrated together with antenna elements 14 into semiconductor modules 50, 60. In this case, transmitting semiconductor modules 50 each include an antenna element 14 and an integrated circuit 56 in the form of a semiconductor chip, which includes HF oscillator 18 and frequency splitter 26. Receiving semiconductor modules 60 each include an antenna element 14 and an integrated circuit 66 in the form of a semiconductor chip, which includes HF oscillator 18, frequency splitter 26 and mixer 20.
The radar sensor having one of the above-described circuit configurations is, for example, a component of a motor vehicle radar system, in particular of a motor vehicle radar system for driver assistance.
In the examples described, a common reference signal is fed to phase-locked loops 24 via conductor structure 32, the common reference signal being used directly for activating frequency splitter 28 in order to synchronize HF oscillators 18 with one another. Divergent from this, other forms of coupling the HF oscillators using reference signals supplied via printed board 12 are conceivable. A coupling, in particular a defined phase relationship between HF oscillators 18 in the same or different oscillation frequencies, may be caused, for example, by supplying the common reference signal to phase detector 28 via a frequency splitter and/or a mixer. In this way, reference signals provided with a frequency offset may be fed to the individual phase-locked loops. In this connection, the reference signals are based on the common reference signal. It is also conceivable to provide multiple coupled oscillators 34 for supplying the particular phase-locked loops via appropriate conductor structures 32.
In the examples described, the antenna elements are patch elements. However, it is also possible to provide antenna elements in the form of electric dipoles, for example, printed dipoles, or magnetic dipoles.

Claims (11)

What is claimed:
1. A circuit configuration for a radar application, comprising:
a printed board;
semiconductor modules mounted on the printed board, each of the semiconductor modules including an integrated circuit, a rewiring layer for connecting the integrated circuit to the printed board and at least one antenna element integrated into the semiconductor module and connected to the integrated circuit for at least one of transmitting and receiving radar signals, and wherein integrated circuits of the semiconductor modules each include at least one HF oscillator and a frequency splitter connected to the HF oscillator; and
phase-locked loops for controlling the at least one HF oscillator, each of the phase-locked loops having the frequency splitter and a phase detector for comparing a split-frequency signal of the HF oscillator with a reference signal, wherein the reference signals are feedable to the phase-locked loops via the printed board, and wherein the phase detector is external to the semiconductor module,
wherein at least one integrated circuit of the semiconductor modules consists of exactly one HF oscillator and exactly one frequency splitter.
2. The circuit configuration of claim 1, wherein the semiconductor modules each have a wafer unit and an interface layer, the wafer unit having a semiconductor chip, which forms the integrated circuit, and a housing layer, in which the semiconductor chip is embedded, and the interface layer having the rewiring layer which connects the integrated circuit to terminals of the interface layer connected to the printed board.
3. The circuit configuration of claim 2, wherein the at least one antenna element is situated in the interface layer.
4. The circuit configuration of claim 1, further comprising:
an oscillator situated on the printed board for generating a reference signal.
5. The circuit configuration of claim 4, wherein the reference signal is a common reference signal for the phase-locked loops.
6. The circuit configuration of claim 1, wherein multiple semiconductor modules are situated in a regular pattern in one row on the printed board.
7. The circuit configuration of claim 1, wherein a beam forming device is situated in front of the semiconductor modules on a side of the semiconductor modules facing away from the printed board.
8. The circuit configuration of claim 1, wherein the semiconductor modules are situated at regular intervals in rows and columns on the printed board.
9. A radar sensor, comprising:
a circuit configuration for a radar application, including:
a printed board;
semiconductor modules mounted on the printed board, each of the semiconductor modules including an integrated circuit, a rewiring layer for connecting the integrated circuit to the printed board and at least one antenna element integrated into the semiconductor module and connected to the integrated circuit for at least one of transmitting and receiving radar signals, and wherein integrated circuits of the semiconductor modules each include at least one HF oscillator and a frequency splitter connected to the HF oscillator; and
phase-locked loops for controlling the at least one HF oscillator, each of the phase-locked loops having the frequency splitter and a phase detector for comparing a split-frequency signal of the HF oscillator with a reference signal, wherein the reference signals are feedable to the phase-locked loops via the printed board, and wherein the phase detector is external to the semiconductor module,
wherein at least one integrated circuit of the semiconductor modules consists of exactly one HF oscillator and exactly one frequency splitter.
10. A motor vehicle radar system, comprising:
a circuit configuration for a radar application, including:
a printed board;
semiconductor modules mounted on the printed board, each of the semiconductor modules including an integrated circuit, a rewiring layer for connecting the integrated circuit to the printed board and at least one antenna element integrated into the semiconductor module and connected to the integrated circuit for at least one of transmitting and receiving radar signals, and wherein integrated circuits of the semiconductor modules each include at least one HF oscillator and a frequency splitter connected to the HF oscillator; and
phase-locked loops for controlling the at least one HF oscillator, each of the phase-locked loops having the frequency splitter and a phase detector for comparing a split-frequency signal of the HF oscillator with a reference signal, wherein the reference signals are feedable to the phase-locked loops via the printed board, and wherein the phase detector is external to the semiconductor module
wherein at least one integrated circuit of the semiconductor modules consists of exactly one HF oscillator and exactly one frequency splitter.
11. The circuit configuration of claim 1, wherein at least one other integrated circuit of the semiconductor modules consists of exactly one other HF oscillator, exactly one other frequency splitter, and a mixer.
US14/117,147 2011-05-10 2012-03-13 Circuit configuration for radar applications Expired - Fee Related US9726753B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102011075552.7 2011-05-10
DE102011075552 2011-05-10
DE102011075552A DE102011075552A1 (en) 2011-05-10 2011-05-10 Circuit arrangement for radar applications
PCT/EP2012/054332 WO2012152474A1 (en) 2011-05-10 2012-03-13 Circuit configuration for radar applications

Publications (2)

Publication Number Publication Date
US20150002330A1 US20150002330A1 (en) 2015-01-01
US9726753B2 true US9726753B2 (en) 2017-08-08

Family

ID=45922659

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/117,147 Expired - Fee Related US9726753B2 (en) 2011-05-10 2012-03-13 Circuit configuration for radar applications

Country Status (5)

Country Link
US (1) US9726753B2 (en)
EP (1) EP2707742A1 (en)
CN (1) CN103502837A (en)
DE (1) DE102011075552A1 (en)
WO (1) WO2012152474A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11719802B2 (en) 2017-08-18 2023-08-08 Infineon Technologies Ag Radar front-end with RF oscillator monitoring

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103091663B (en) * 2013-01-05 2015-02-11 中国兵器工业集团第二一四研究所苏州研发中心 Phased array radar incentive drive control circuit
JP5916878B2 (en) 2013-05-01 2016-05-11 古河電気工業株式会社 Radar system
IL242588B (en) * 2015-11-12 2022-07-01 Israel Aerospace Ind Ltd Architecture of an electromagnetic head
DE102016224900A1 (en) * 2016-12-14 2018-06-14 Robert Bosch Gmbh MIMO radar sensor for motor vehicles
EP3502733B1 (en) * 2017-12-19 2023-02-15 NXP USA, Inc. Radar system comprising coupling device
GB2569827B (en) * 2018-01-02 2022-03-30 S&Ao Ltd A radar device
DE102018200647A1 (en) * 2018-01-16 2019-07-18 Vega Grieshaber Kg RADAR TRANSCEIVER CHIP
DE102018203934A1 (en) * 2018-03-15 2019-09-19 Robert Bosch Gmbh Radar sensor system and method for operating a radar sensor system
DE102018216538A1 (en) * 2018-09-27 2020-04-02 Robert Bosch Gmbh Radar sensor with synchronized high-frequency components
US11664872B2 (en) 2019-01-31 2023-05-30 Spreadtrum Communications (Shanghai) Co., Ltd. Beam detection method and device, beam adjusting method and device, antenna module selection method and device, and computer readable storage media
CN111294093B (en) * 2019-01-31 2022-03-22 展讯通信(上海)有限公司 AiP structure-based beam detection method and device and computer-readable storage medium

Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490721A (en) * 1980-11-17 1984-12-25 Ball Corporation Monolithic microwave integrated circuit with integral array antenna
US4731614A (en) * 1986-08-11 1988-03-15 Crane Patrick E Phased array scanning system
US5376942A (en) * 1991-08-20 1994-12-27 Sumitomo Electric Industries, Ltd. Receiving device with separate substrate surface
US5493305A (en) * 1993-04-15 1996-02-20 Hughes Aircraft Company Small manufacturable array lattice layers
US6323735B1 (en) * 2000-05-25 2001-11-27 Silicon Laboratories, Inc. Method and apparatus for synthesizing high-frequency signals utilizing on-package oscillator circuit inductors
US20030201930A1 (en) * 2002-04-26 2003-10-30 Hitachi, Ltd. Radar sensor
US6686867B1 (en) * 1999-07-30 2004-02-03 Volkswagen Ag Radar sensor and radar antenna for monitoring the environment of a motor vehicle
DE10300955A1 (en) 2003-01-13 2004-07-29 Epcos Ag Radar transceiver for microwave and millimeter wave applications
US20050156780A1 (en) * 2004-01-16 2005-07-21 Ghz Tr Corporation Methods and apparatus for automotive radar sensors
US20050225481A1 (en) * 2004-04-12 2005-10-13 Bonthron Andrew J Method and apparatus for automotive radar sensor
US20050285773A1 (en) * 2002-06-06 2005-12-29 Roadeye Flr General Partnership Forward-looking radar system
US7049682B1 (en) * 2001-05-14 2006-05-23 Amkor Technology, Inc. Multi-chip semiconductor package with integral shield and antenna
DE102004059332A1 (en) 2004-12-09 2006-06-14 Robert Bosch Gmbh Radar transceiver
US20060262007A1 (en) * 2004-01-16 2006-11-23 Clariant Technologies, Corp. Methods and apparatus for automotive radar sensors
DE102007051875A1 (en) 2007-10-30 2009-05-07 Robert Bosch Gmbh RF chip module, RF assembly, and method of making an RF assembly
US20090251362A1 (en) * 2008-04-04 2009-10-08 Alexandros Margomenos Three dimensional integrated automotive radars and methods of manufacturing the same
US20090251357A1 (en) * 2008-04-04 2009-10-08 Toyota Motor Engineering & Manufacturing North America, Inc. Dual-band antenna array and rf front-end for mm-wave imager and radar
US20090267822A1 (en) * 2008-04-28 2009-10-29 Hitachi, Ltd. Mobile radar and planar antenna
US20100117891A1 (en) * 2007-04-02 2010-05-13 National Ins. Of Info. And Communications Tech. Microwave/millimeter wave sensor apparatus
US20100164783A1 (en) * 2008-12-31 2010-07-01 Debabani Choudhury Platform Integrated Phased Array Transmit/Receive Module
US20100193935A1 (en) * 2009-01-30 2010-08-05 Infineon Technologies Ag Integrated antennas in wafer level package
US7876261B1 (en) * 2008-10-28 2011-01-25 Lockheed Martin Corporation Reflected wave clock synchronization
US20110285575A1 (en) * 2009-02-13 2011-11-24 Freescale Semiconductor, Inc. Integrated circuit comprising frequency generation circuitry for controlling a frequency source
US20110304498A1 (en) * 2009-10-22 2011-12-15 Toyota Motor Europe Nv/Sa Submillimeter radar using phase information
US20120104574A1 (en) * 2010-10-28 2012-05-03 Infineon Technologies Ag Integrated antennas in wafer level package
US8456351B2 (en) * 2010-04-20 2013-06-04 International Business Machines Corporation Phased array millimeter wave imaging techniques
US8633851B2 (en) * 2010-02-19 2014-01-21 Honeywell International Inc. Low power, space combined, phased array radar
US20140266866A1 (en) * 2013-03-12 2014-09-18 Nokia Corporation Steerable transmit, steerable receive frequency modulated continuous wave radar transceiver

Patent Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490721A (en) * 1980-11-17 1984-12-25 Ball Corporation Monolithic microwave integrated circuit with integral array antenna
US4731614A (en) * 1986-08-11 1988-03-15 Crane Patrick E Phased array scanning system
US5376942A (en) * 1991-08-20 1994-12-27 Sumitomo Electric Industries, Ltd. Receiving device with separate substrate surface
US5493305A (en) * 1993-04-15 1996-02-20 Hughes Aircraft Company Small manufacturable array lattice layers
US6686867B1 (en) * 1999-07-30 2004-02-03 Volkswagen Ag Radar sensor and radar antenna for monitoring the environment of a motor vehicle
US6323735B1 (en) * 2000-05-25 2001-11-27 Silicon Laboratories, Inc. Method and apparatus for synthesizing high-frequency signals utilizing on-package oscillator circuit inductors
US7049682B1 (en) * 2001-05-14 2006-05-23 Amkor Technology, Inc. Multi-chip semiconductor package with integral shield and antenna
US20030201930A1 (en) * 2002-04-26 2003-10-30 Hitachi, Ltd. Radar sensor
US20050285773A1 (en) * 2002-06-06 2005-12-29 Roadeye Flr General Partnership Forward-looking radar system
DE10300955A1 (en) 2003-01-13 2004-07-29 Epcos Ag Radar transceiver for microwave and millimeter wave applications
US20060097906A1 (en) * 2003-01-13 2006-05-11 Patric Heide Radar-transceiver for microwave and millimetre applications
US20060262007A1 (en) * 2004-01-16 2006-11-23 Clariant Technologies, Corp. Methods and apparatus for automotive radar sensors
US20050156780A1 (en) * 2004-01-16 2005-07-21 Ghz Tr Corporation Methods and apparatus for automotive radar sensors
US20050225481A1 (en) * 2004-04-12 2005-10-13 Bonthron Andrew J Method and apparatus for automotive radar sensor
US20080117097A1 (en) * 2004-12-09 2008-05-22 Thomas Walter Radar Transceivers
DE102004059332A1 (en) 2004-12-09 2006-06-14 Robert Bosch Gmbh Radar transceiver
CN101076740A (en) 2004-12-09 2007-11-21 罗伯特·博世有限公司 Single-chip radar for motor vehicle applications
US20100117891A1 (en) * 2007-04-02 2010-05-13 National Ins. Of Info. And Communications Tech. Microwave/millimeter wave sensor apparatus
DE102007051875A1 (en) 2007-10-30 2009-05-07 Robert Bosch Gmbh RF chip module, RF assembly, and method of making an RF assembly
US20090251362A1 (en) * 2008-04-04 2009-10-08 Alexandros Margomenos Three dimensional integrated automotive radars and methods of manufacturing the same
US20090251357A1 (en) * 2008-04-04 2009-10-08 Toyota Motor Engineering & Manufacturing North America, Inc. Dual-band antenna array and rf front-end for mm-wave imager and radar
US20090267822A1 (en) * 2008-04-28 2009-10-29 Hitachi, Ltd. Mobile radar and planar antenna
US7876261B1 (en) * 2008-10-28 2011-01-25 Lockheed Martin Corporation Reflected wave clock synchronization
US20100164783A1 (en) * 2008-12-31 2010-07-01 Debabani Choudhury Platform Integrated Phased Array Transmit/Receive Module
US20100193935A1 (en) * 2009-01-30 2010-08-05 Infineon Technologies Ag Integrated antennas in wafer level package
DE102010001407A1 (en) 2009-01-30 2010-09-30 Infineon Technologies Ag Integrated antennas at wafer level
US8278749B2 (en) * 2009-01-30 2012-10-02 Infineon Technologies Ag Integrated antennas in wafer level package
US20110285575A1 (en) * 2009-02-13 2011-11-24 Freescale Semiconductor, Inc. Integrated circuit comprising frequency generation circuitry for controlling a frequency source
US20110304498A1 (en) * 2009-10-22 2011-12-15 Toyota Motor Europe Nv/Sa Submillimeter radar using phase information
US8633851B2 (en) * 2010-02-19 2014-01-21 Honeywell International Inc. Low power, space combined, phased array radar
US8456351B2 (en) * 2010-04-20 2013-06-04 International Business Machines Corporation Phased array millimeter wave imaging techniques
US20120104574A1 (en) * 2010-10-28 2012-05-03 Infineon Technologies Ag Integrated antennas in wafer level package
US20140266866A1 (en) * 2013-03-12 2014-09-18 Nokia Corporation Steerable transmit, steerable receive frequency modulated continuous wave radar transceiver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11719802B2 (en) 2017-08-18 2023-08-08 Infineon Technologies Ag Radar front-end with RF oscillator monitoring

Also Published As

Publication number Publication date
US20150002330A1 (en) 2015-01-01
WO2012152474A1 (en) 2012-11-15
CN103502837A (en) 2014-01-08
EP2707742A1 (en) 2014-03-19
DE102011075552A1 (en) 2012-11-15

Similar Documents

Publication Publication Date Title
US9726753B2 (en) Circuit configuration for radar applications
CN108428693B (en) Integrated circuit package
US20170234971A1 (en) Phase calibration device for a plurality of transmission antennas
US10978778B2 (en) Wafer level package with integrated antennas and means for shielding
US8981998B2 (en) Built-in transmitting and receiving integrated radar antenna
US9797989B2 (en) Semiconductor module having integrated antenna structures
Hasch et al. Millimeter-wave technology for automotive radar sensors in the 77 GHz frequency band
US20150048471A1 (en) Semiconductor module having an integrated waveguide for radar signals
US8018384B2 (en) Method and apparatus for packaging an integrated chip and antenna
US6686867B1 (en) Radar sensor and radar antenna for monitoring the environment of a motor vehicle
US6717544B2 (en) Radar sensor
US20090251357A1 (en) Dual-band antenna array and rf front-end for mm-wave imager and radar
Metz et al. Fully integrated automotive radar sensor with versatile resolution
DE10355796B4 (en) Integrated circuit for distance and / or speed measurement of objects
US20100141350A1 (en) High-Frequency Circuit Board, High-Frequency Circuit Module, and Radar Apparatus
US7671806B2 (en) Antenna system for a radar transceiver
CN113678250A (en) Packaged antenna integrated circuit device
CN111755832A (en) Integrated cavity-backed slot array antenna system
US20080316126A1 (en) Antenna System for a Radar Transceiver
US20080117097A1 (en) Radar Transceivers
US20090040111A1 (en) Antenna System for a Radar Sensor
US11416730B2 (en) Radio-frequency device with radio-frequency signal carrying element and associated production method
US20250044404A1 (en) Radar apparatus and method for producing a radar apparatus
US20230291115A1 (en) Antenna device, radar sensor device and method for producing an antenna device
US20200083183A1 (en) Electronic component and electronic device

Legal Events

Date Code Title Description
AS Assignment

Owner name: ROBERT BOSCH GMBH, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BINZER, THOMAS;BRUEGGEMANN, OLIVER;WALDSCHMIDT, CHRISTIAN;AND OTHERS;SIGNING DATES FROM 20131126 TO 20131216;REEL/FRAME:033763/0833

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20210808

点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载