US9576615B1 - Memory module with power management system and method of operation thereof - Google Patents
Memory module with power management system and method of operation thereof Download PDFInfo
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- US9576615B1 US9576615B1 US14/884,369 US201514884369A US9576615B1 US 9576615 B1 US9576615 B1 US 9576615B1 US 201514884369 A US201514884369 A US 201514884369A US 9576615 B1 US9576615 B1 US 9576615B1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/325—Power saving in peripheral device
- G06F1/3275—Power saving in memory, e.g. RAM, cache
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Definitions
- the present invention relates generally to a memory module, and more particularly to a system for power management within the memory module.
- the integrated circuit and memory modules are the building block used in high performance electronic systems to provide applications for usage in products such as automotive vehicles, computers, servers, data centers, cell phones, intelligent portable military devices, aeronautical spacecraft payloads, and a vast line of other similar products that require small compact electronics supporting many complex functions.
- Products must compete in world markets and attract many consumers or buyers in order to be successful. It is very important for products to continue to improve in features, performance, and reliability while reducing product costs, product size, and to be available quickly for purchase by the consumers or buyers. As environmental concerns grow larger in the mind of consumers, power management becomes more and more important. In a time of devices which must work on demand, it is not enough to simply turn off unused components, which can impact the user experience.
- the present invention provides a method of operation of a memory module with power management system that includes providing a base power plane and a managed power plane; electrically connecting the base power plane and the managed power plane only through a power management circuit; electrically connecting a memory array to the managed power plane; monitoring power usage of the memory array with the power management circuit; and modifying input voltage to the managed power plane based on the power usage of the memory array.
- the present invention provides a memory module with power management system that includes a base power plane; a power management circuit electrically connected to the base power plane; a managed power plane electrically connected to the base power plane only through the power management circuit; and a memory array electrically connected to the managed power plane.
- FIG. 1 is a functional block diagram of a memory module with a power management system in a first embodiment of the present invention.
- FIG. 2 is a double sided view of a memory module in a second embodiment of the present invention.
- FIG. 3 is a more detailed view of features and components which may reside within the memory module of FIG. 1 .
- FIG. 4 is a flow chart of a method of operation of a memory module with power management system in a further embodiment of the present invention.
- the term “horizontal” as used herein is defined s a plane parallel to the plane or connection surface of the DIMM (dual in-line memory module), regardless of its orientation.
- the term “vertical” refers to a direction perpendicular to the horizontal as just defined. Terms, such as “above”, “below”, “bottom”, “top”, “side” (as in “sidewall”), “higher”, “lower”, “upper”, “over”, and “under”, are defined with respect to the horizontal plane, as shown in the figures.
- the term “on” means that there is direct contact between elements.
- the term “directly on” means that there is direct contact between one element and another element without an intervening element.
- active side refers to a side of a die, a module, a package, or an electronic structure having active circuitry fabricated thereon or having elements for connection to the active circuitry within the die, the module, the package, or the electronic structure.
- the memory module 100 can be electrically coupled to a motherboard 102 .
- the memory module 100 can include a base power plane 104 , a power management circuit 106 , a managed power plane 108 , a memory array 110 , a register 112 , and an EEPROM (electrically erasable programmable read-only memory) 114 .
- EEPROM electrically erasable programmable read-only memory
- the memory module 100 is defined as a device for holding data to be accessed in any order or in bursts for use during the operation of the various components connected to the motherboard 102 .
- the memory module 100 can be a dual in-line memory module (DIMM) and which can take many forms such as RDIMMs, SO-DIMMs (Small Outline DIMMs), Mini-DIMMs, Micro-DIMMs, or other types of memory modules.
- DIMM dual in-line memory module
- the motherboard 102 can provide power to various components of the memory module 100 .
- the motherboard 102 can provide power to the base power plane 104 and separately to the EEPROM 114 through an input power plane 116 .
- the input power plane 116 is also labeled as VSPD (more commonly shown as V SPD or V DDSPD , which stands for serial presence detect).
- the input power plane 116 supplies input voltage to the EEPROM 114 .
- the EEPROM 114 is also connected to a ground plane 118 , which is labeled in this example in this figure as GND.
- the base power plane 104 can also be called the VDD (also V DD ) power plane, and is defined as the first power plane used to pass power to the memory array 110 .
- the motherboard 102 first passes power to the base power plane 104 through various inputs of the memory module 100 .
- the base power plane 104 aggregates power from the motherboard 102 and sends it directly to the power management circuit 106 .
- the base power plane 104 is electrically coupled to the power management circuit 106 .
- the power management circuit 106 is electrically coupled to the managed power plane 108 , which is electrically coupled to the memory array 110 and the register 112 .
- the managed power plane 108 can also be called the VDDMEM power plane (or V DDMEM ) to differentiate it from the VDD power plane.
- the base power plane 104 is electrically coupled to the managed power plane 108 only through the power management circuit 106 , and is never directly coupled to the managed power plane 108 .
- the power management circuit 106 can take the form of a chip containing the power management circuitry or the circuitry of the power management circuit 106 can be embedded directly within the memory module 100 . Though the power management circuit 106 is described as a circuit, it may also be a self-contained chip or integrated circuit package, for example.
- the power management circuit 106 sits between the managed power plane 108 and the base power plane 104 , which are only connected through the power management circuit 106 .
- the memory array 110 and the register 112 draw power through the managed power plane 108 .
- the memory array 110 can include many different types of volatile and nonvolatile memory such as random access memory (RAM) including DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM, and other implementations of RAM on a memory module.
- RAM random access memory
- the register 112 can take various forms and can include a register, a memory buffer, a data buffer, or some combination thereof, for example.
- the power management circuit 106 can monitor the managed power plane 108 in order to see how much power the memory array 110 or the register 112 are demanding. When the memory array 110 is idle, the power or input voltage supplied to the managed power plane 108 is reduced. As the demand for current by the memory array 110 increases, the power supply to the managed power plane 108 is increased in real-time to provide the necessary power.
- the base power plane 104 can appear to the motherboard 102 to be the same as a typical VDD power plane, and the motherboard 102 does not need to be modified to deal with the managed power plane 108 .
- the managed power plane 108 can be managed entirely by the power management circuit 106 , for example.
- the power management circuit 106 electrically connected to the input power plane 116 and the ground plane 118 . This can be done in order to isolate the power supply of the power management circuit 106 from that of the memory array 110 in order to cut down on potential interference.
- the use of the input power plane 116 can keep the power to the power management circuit 106 itself more stable; fluctuations of the power due to varying demands from the memory array 110 can be avoided.
- This connection to the input power plane 116 is for illustrative purposes only, and it is understood that the power management circuit 106 can be connected to other power supplies as necessary or convenient.
- each idle rank connected to its own power management circuit (such as the power management circuit 106 ) will require less power and can have power drawn by those idle ranks reduced rather than having one rank within the memory array 110 cause an increase in power draw for the entire memory array 110 .
- the power management circuit 106 can also be assigned to two ranks, four ranks, or any subset of the total number of ranks within the memory array 110 . The total number of power management circuits used can be adjusted as necessary depending on available space within the physical structure of the memory module 100 .
- FIG. 2 therein is shown a double sided view of a memory module 200 in a second embodiment of the present invention.
- the figure shows two sides of the same memory module, and the bottom portion can be considered as the view after rotating the top portion around an imaginary line between the two portions of the figure. This is why the two views of the memory module 200 are not simply mirror images of one another, though they do share some of the same elements.
- the memory module 200 is an example of the physical structure of a memory module, though it is understood that this physical structure is for example only, and that different physical configurations are possible.
- the top portion of the figure is shown one side of the memory module 200 with the various chips of a memory array 210 , a register 212 , and an EEPROM 214 clearly visible. Only two of the chips of the memory array 210 are labeled, though it is understood that the other chips currently unlabeled can also be chips within the memory array 210 .
- a base power plane 204 and a managed power plane 208 Shown with dotted lines are a base power plane 204 and a managed power plane 208 ; these power planes are physically separate from one another and are represented by dotted lines in order to show that the power planes are physically located within the board of the memory module 200 rather than being exposed on the surface.
- the base power plane 204 and the managed power plane 208 are linked together by a power management circuit 206 .
- the power management circuit 206 is shown as a self-contained chip located in particular spot physically directly between the base power plane 204 and the managed power plane 208 , although it is understood that the power management circuit 206 can be located in other locations or take other forms so long as room for appropriate circuitry and traces is available.
- the power management circuit 206 can take the form of a self-contained chip or integrated circuit package, or the power management circuit 206 can be the circuitry itself. If the power management circuit 206 takes the form of an integrated circuit package, for example, the power management circuit 206 can be stacked on top of other chips in order to save space and share a power supply with other chips such as the register 212 or the EEPROM 214 .
- the power management circuit 206 can be the power management circuitry itself or an integrated circuit package embedded within the board of the memory module 200 . It is understood that the power management circuit 206 does not need to be physically between the base power plane 204 and the managed power plane 208 so long as the power management circuit 206 is electrically in between the two power planes.
- Electrical signals and power can be provided to the memory module 200 through input pins 222 , which can also be called gold fingers.
- the input voltage can be supplied separately to the EEPROM 214 and to the base power plane 204 .
- the base power plane 204 aggregates this power from the various pins of the input pins 222 and sends it directly to the power management circuit 206 .
- the base power plane 204 is electrically coupled to the power management circuit 206 .
- the power management circuit 206 is in turn electrically coupled to the managed power plane 208 , which is electrically coupled to the various chips of the memory array 210 and the register 212 .
- the power management circuit 206 sits between the managed power plane 208 and the base power plane 204 , which are only connected through the power management circuit 206 .
- the memory array 210 and the register 212 draw power through the managed power plane 208 .
- the memory array 210 can include many different types of volatile and nonvolatile memory such as random access memory (RAM) including DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM, and other implementations of RAM on a memory module.
- RAM random access memory
- the power management circuit 206 can monitor the managed power plane 208 in order to see how much power the memory array 210 or the register 212 are demanding. When the memory array 210 is idle, the power or voltage supplied to the managed power plane 208 is reduced. As the demand for current by the memory array 210 increases, the power supply to the managed power plane 208 is increased in real-time to provide the necessary power.
- the base power plane 204 can appear to the motherboard 102 of FIG. 1 to be the same as a typical VDD power plane, and the motherboard 102 does not need to be modified to deal with the managed power plane 208 or the fact that the power plane has now been split in two.
- the managed power plane 208 can be managed entirely by the power management circuit 206 , for example.
- the power management circuit 206 manage the power to the memory array 210 can allow the memory module 200 with the power management circuit 206 to be a direct replacement for standard memory modules with no change to the motherboard 102 . Because the motherboard 102 sends power to the base power plane 204 which appears the same to the motherboard 102 as a typical VDD power plane, and the power management is all internal to the memory module 200 , no additional code or hardware is required for the motherboard 102 to use the memory module 200 . Additionally, the use of the power management circuit 206 can keep the memory module 200 within JEDEC mechanical and electrical standards, which allows for the memory module 200 to be fully interchangeable with typical memory modules lacking a power management system.
- the power usage efficiency of the memory module 200 can be increased greatly. Because the power management circuit 206 can monitor the power usage of the memory array 210 through the managed power plane 208 , the power management circuit 206 can intelligently determine when to increase or decrease the voltage. Intelligent reduction of power usage based on what the memory array 210 is requiring by the power management circuit 206 allows for anywhere from a 10% to 25% decrease in power usage.
- FIG. 3 therein is shown a more detailed view of features and components which may reside within the memory module 100 of FIG. 1 .
- a more simplified functional block diagram with the power management circuit 106 between the base power plane 104 and the managed power plane 108 .
- the power management circuit is also shown electrically connected to the EEPROM 114 .
- Standard memory modules contain an I2C (I-squared-C, IIC, or inter-integrated circuit) bus for connecting various components within the memory module.
- I2C I-squared-C, IIC, or inter-integrated circuit
- a connection to the I2C bus can also be used to program any of the components attached to the bus, as each of the components has its own address.
- simply connecting the power management circuit 106 to the I2C bus for power and addressing purposes can cause interference and conflicts with other devices also connected to the I2C bus.
- the inventors have discovered that it was necessary to disconnect the power management circuit 206 from the I2C bus in order to avoid this conflict or interference.
- a first test point 334 is electrically connected to the serial clock line 330 and the serial data line 332 through resistors in this example.
- a second test point 336 is attached to the serial clock line 330 in this example.
- a third test point 338 is connected to the serial data line 332 in this example.
- a fourth test point 340 is connected to ground in this example.
- the first test point 334 , the second test point 336 , the third test point 338 , and the fourth test point 340 are used to allow for programming of the power management circuit 106 . It is understood that the particular configuration and numbers of test points are for example only and that other configurations are possible.
- the test points can allow for the power management circuit 106 to be programmed in advance of attachment or on the memory module 100 itself.
- the EEPROM 114 can take different forms and have different properties depending on the application. If the EEPROM 114 is one that can be reversibly locked, it has been found that a protection circuit 328 is necessary to protect the power management circuit 106 from damage. A reversibly locked EEPROM can be opened or unlocked for rewriting by applying a high voltage on the proper pin to the EEPROM 114 , for example. Because the power management circuit 106 in this example is electrically connected to the EEPROM 114 , this high voltage can potentially damage the power management circuit 106 during the process of locking or unlocking the EEPROM 114 . The protection circuit 328 can protect the power management circuit 106 by providing an alternate path for current, for example. As an example, the protection circuit can take the form of a Zener diode connected to ground.
- the method 400 includes: providing a base power plane and a managed power plane in a block 402 ; electrically connecting the base power plane and the managed power plane only through a power management circuit in a block 404 ; electrically connecting a memory array to the managed power plane in a block 406 ; monitoring power usage of the memory array with the power management circuit in a block 408 ; and modifying input voltage to the managed power plane based on the power usage of the memory array in a block 410 .
- the resulting method, process, apparatus, device, product, and/or system is straightforward, cost-effective, uncomplicated, highly versatile, accurate, sensitive, and effective, and can be implemented by adapting known components for ready, efficient, and economical manufacturing, application, and utilization.
- Another important aspect of the present invention is that it valuably supports and services the historical trend of reducing costs, simplifying systems, and increasing performance.
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US14/884,369 US9576615B1 (en) | 2015-10-15 | 2015-10-15 | Memory module with power management system and method of operation thereof |
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Cited By (3)
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US10410686B2 (en) | 2017-10-13 | 2019-09-10 | Samsung Electronics Co., Ltd. | Memory modules storing a trimming control code associated with a minimum level of a power supply voltage, methods of operating the memory modules, and test systems of the memory modules |
US10891988B2 (en) | 2017-10-13 | 2021-01-12 | Samsung Electronics Co., Ltd. | Memory modules and memory systems including a power management integrated circuit |
US20210407553A1 (en) * | 2021-07-07 | 2021-12-30 | Intel Corporation | Method and apparatus for improved memory module supply current surge response |
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