US9397218B2

US9397218B2 - Method and apparatus for mitigating effects of parasitic capacitance in semiconductor devices

Info

Publication number: US9397218B2
Application number: US14/567,971
Authority: US
Inventors: Chuan-Cheng Cheng; Runzi Chang
Original assignee: Marvell World Trade Ltd
Current assignee: Marvell International Ltd; Cavium International; Marvell Asia Pte Ltd
Priority date: 2014-01-09
Filing date: 2014-12-11
Publication date: 2016-07-19
Anticipated expiration: 2034-12-11
Also published as: CN105900242B; CN105900242A; TWI638409B; US20150194518A1; WO2015105625A1; TW201528380A

Abstract

Embodiments include a semiconductor device comprising: a gate layer comprising (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer; and a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance.

Description

CROSS REFERENCE TO RELATED APPLICATIONS

The present disclosure claims priority to U.S. Provisional Patent Application No. 61/925,481, filed on Jan. 9, 2014, which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

Embodiments of the present disclosure relate to a management of parasitic capacitance, and in particular to method and apparatus for mitigating effects of parasitic capacitance in semiconductor devices.

BACKGROUND

Semiconductor devices are becoming increasingly smaller in size. With the decrease in size, a distance between two components (e.g., a gate layer and a drain contact) of a semiconductor device also continues to decrease, leading to, for example, generation of parasitic capacitance between the two components. For example, parasitic capacitance between may be generated between a gate layer and a drain contact of a semiconductor device, due to, for example, a relatively small distance between the gate layer and the drain contact. Such parasitic capacitance may have undesirable effect while the semiconductor device is used, for example, in high frequency switching operation.

SUMMARY

In various embodiments, the present disclosure provides a semiconductor device comprising: a gate layer comprising (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer; and a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance.

In various embodiments, the present disclosure also provides a method of forming a semiconductor device, comprising: forming a gate layer, wherein the gate layer comprises (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer; and forming a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure will be readily understood by the following detailed description in conjunction with the accompanying drawings. To facilitate this description, like reference numerals designate like structural elements. Various embodiments are illustrated by way of example and not by way of limitation in the figures of the accompanying drawings.

FIG. 1 schematically illustrates a top view of a semiconductor device having a non-linear gate layer.

FIG. 2 illustrates a design of a semiconductor device, where the design comprises a linearity indication layer to indicate non-linearity of a gate layer.

FIGS. 3A-3F illustrate various operations associated with formation of a semiconductor device.

FIGS. 4A and 4B illustrate a semiconductor device, with sections of a gate layer of the semiconductor device being cut.

FIG. 5 schematically illustrates a top view of a device comprising a plurality of semiconductor devices.

FIG. 6 is a flow diagram of an example method of formation of a semiconductor device.

DETAILED DESCRIPTION

FIG. 1 schematically illustrates a top view of a semiconductor device 100 (henceforth also referred to as “device 100”) having a non-linear gate layer 106 a. In an embodiment, the device 100 comprises, for example, a plurality of transistors.

In an embodiment, the device 100 comprises a plurality of

diffusion layers

102 a, 102 b, 102 c. In an example, the device 100 comprises a FinFET device, in which one or more of the

diffusion layers

102 a, 102 b, 102 c are fins of the device. In an example, the

diffusion layers

102 a, 102 b, 102 c are conducting channels, wrapped by thin silicon fin, to form a body of the device 100. In an example, individual ones of the

diffusion layers

102 a, 102 b, 102 c represents any appropriate region of the device 100, e.g., a source region, a drain region, or the like. Although three diffusion layers are illustrated in FIG. 1, the device 100 can have any different number of diffusion layers.

In an embodiment, the device 100 further comprises a plurality of

contacts

104 a, 104 b, 104 c and 104 d. In an example, individual ones of the

contacts

104 a, 104 b, 104 c and 104 d is a source contact or a drain contact. The

contacts

104 a, 104 b, 104 c and 104 d are, for example, metal contacts that are coupled to corresponding regions. For example, although not illustrated in FIG. 1, individual ones of the

contacts

104 a, 104 b, 104 c and 104 d is electrically connected to a corresponding one or more of the diffusion layers 102 a, . . . , 102 c. Although four contacts 104 a, . . . , 104 d are illustrated in FIG. 1, the device 100 may have any different number of contacts.

In an embodiment, the device 100 further comprises a plurality of

gate layers

106 a, 106 b and 106 c. In an example, one or more of the

gate layers

106 a, 106 b and 106 c comprises metal. In another example, one or more of the

gate layers

106 a, 106 b and 106 c comprises any other appropriate material, e.g., polysilicon (in case a gate layer comprises polysilicon, the gate layer may also be referred to as a poly gate layer).

In an example, the

contacts

104 a and 104 b, and the gate layer 106 a, along with one or more other components, form a first transistor 108 a; the

contacts

104 b and 104 c, and the gate layer 106 b, along with one or more other components, form a second transistor 108 b; and the

contacts

104 c and 104 d, and the gate layer 106 c, along with one or more other components, form a third transistor 108 c. Thus, for example, the contact 104 b is a part of both the first transistor 108 a and the second transistor 108 b. In an example, the contact 104 b acts as a drain contact (e.g., contact for a drain region) for the first transistor 108 a, and also acts as a source contact (e.g., contact for a source region) for the second transistor 108 b. As individual ones of the contacts 104 a, . . . , 104 d can act as a source contact and/or a drain contact, the contacts 104 a, . . . , 104 d are also referred to herein as source/drain contacts.

In an embodiment, the gate layer 106 b is formed substantially at equal distance from the

adjacent contacts

104 b and 104 c. For example, a distance between the gate layer 106 b and the contact 104 b is X units (wherein X may have any appropriate value), and a distance between the gate layer 106 b and the contact 104 c is also substantially X units, as illustrated in FIG. 1. Similarly, the gate layer 106 c is formed substantially at equal distance from the

adjacent contacts

104 c and 104 d.

In an embodiment, the gate layer 106 a has a non-linear shape. For example, the gate layer 106 a comprises a section 106 a 1, a section 106 a 2 and a section 106 a 3. In an embodiment, the section 106 a 2 of the gate layer 106 a is offset with respect to the sections 106 a 1 and 106 a 3 of the gate layer 106 a. In an embodiment, the section 106 a 1 is not offset relative to the section 106 a 3. The sections 106 a 1 and 106 a 3 form two end portions of the gate layer 106 a, while the section 106 a 2 forms a middle portion of the gate layer 106 a, as illustrated in FIG. 1. In an example, a distance between the section 106 a 1 of the gate layer 106 a and each of the

contacts

104 a and 104 b is substantially equal to X units; and a distance between the section 106 a 3 of the gate layer 106 a and each of the

contacts

104 a and 104 b is also substantially equal to X units, as illustrated in FIG. 1. However, a distance between the section 106 a 2 of the gate layer 106 a and the contact 104 a is Y1 units; while a distance between the section 106 a 2 of the gate layer 106 a and the contact 104 b is Y2 units, where Y1 is different from Y2. In the example of FIG. 1, Y2 is higher than Y1 (i.e., the section 106 a 2 of the gate layer 106 is closer to the contact 104 a, compared to the contact 104 b). In an example, the contact 104 b forms a drain contact of the first transistor 108 a, and the contact 104 a forms a source contact of the first transistor 108 a. In an embodiment, based on the contact 104 b forming the drain contact of the first transistor 108 a, the distance Y2 is higher than the distance Y1.

In a semiconductor device comprising multiple transistors, one or more transistors may be more critical than one or more other transistors of the semiconductor device. For example, a critical transistor may be employed for a critical operation (e.g., for high speed and high frequency switching), and it may be desirable to reduce parasitic or Miller capacitance between a gate layer and an adjacent metal contact in the critical transistor. For example, it may be desirable to reduce parasitic capacitance or Miller capacitance between a gate layer and a drain contact of a critical transistor, e.g., compared to reducing parasitic capacitance between the gate layer and a source contact of the critical transistor.

In an example, the transistor 108 a is a critical transistor (e.g., relative to the

transistors

108 b and 108 c). For example, the transistor 108 a may be used for a high speed and high frequency switching operation. As an example, it is desirable to reduce parasitic capacitance or Miller capacitance between the gate layer 106 a and an adjacent contact in the transistor 108 a (e.g., compared to reducing capacitance in transistors 108 b and/or 108 c). The parasitic or Miller capacitance between the gate layer 106 a and an adjacent contact is based on a distance between the gate layer 106 and the adjacent contact. Also, it may be more desirable to reduce parasitic capacitance or Miller capacitance between the gate layer 106 a and the drain contact 104 b of the transistor 108 a, e.g., compared to reducing parasitic capacitance or Miller capacitance between the gate layer 106 a and the source contact 104 a of the transistor 108 a.

In an embodiment, forming the non-linear gate layer 106 a results in an increase in a distance between the section 106 a 2 of the gate layer 106 and the contact 104 b, while resulting in a decrease in distance between the section 106 a 2 of the gate layer 106 and the contact 104 a. Also, in an example, the contact 104 b acts as a drain contact for the transistor 108 a. Accordingly, the parasitic or Miller capacitance between the gate layer 106 a and the drain contact 104 b of the transistor 108 a is reduced, due to the non-linear shape of the gate layer 106 a. The non-linear shape of the gate layer 106 a also results in an increase in the parasitic or Miller capacitance between the gate layer 106 a and the source contact 104 a of the transistor 108 a. However, as previously discussed herein, for high frequency operations, reduction of capacitance between a gate layer and a drain contact of a transistor is more critical (e.g., even if it results in an increase in the capacitance between the gate layer and the source contact of the transistor). Thus, the non-linear shape of the gate layer 106 a results in a decrease in parasitic or Miller capacitance between the gate layer 106 a and the drain contact 104 b, and thereby improving a performance of the transistor 108 a.

In an embodiment, formation of the device 100 is based on a database, and a design algorithm that controls formation of the device 100. For example, a system (not illustrated in the figures) comprises one or more a processors, and a non-transitory computer-readable storage medium (e.g., memory), wherein instructions are tangibly stored on the computer-readable storage medium. The instructions are executable by the one or more processors to enable the processors to control formation of the device 100. The database and the algorithm that controls formation of the device 100 may be stored on the computer-readable storage medium.

In an embodiment, the database stores data required for forming the device 100 (e.g., data that indicates forming various components of the device 100, the shapes and sizes of the components, the connections between the components, and/or the like). The database, for example, includes data that indicates formation of the gate layers 106 a, 106 b and 106 c.

In an embodiment, the database also includes data that indicates that the gate layer 106 a is to have a non-linear shape, and also includes data that indicates a side to which the middle portion of the gate layer 106 s is to be shifted. For example, the database can include a two bit flag corresponding to each of the gate layers 106 a, 106 b and 106 c. A first bit of the flag, for example, indicates whether the corresponding gate layer is to be linear or non-linear; and a second bit of the flag indicates, if the corresponding gate layer is non-linear, a direction in which the middle section of the corresponding gate layer is to be shifted. A 00 value of the flag, for example, indicates that the corresponding gate layer is to be linear. For example, the flags corresponding to the gate layers 106 b and 106 c have a value of 00. A 10 or 11 value of the flag indicates that the corresponding gate layer is to be non-linear. For example, a 10 value of the flag indicates that the corresponding gate layer is to be non-linear, and the middle section of the corresponding gate layer is to be shifted to the right; and a 01 value of the flag indicates that the corresponding gate layer is to be non-linear, and the middle section of the corresponding gate layer is to be shifted to the left. In the example of FIG. 1, the flag corresponding to the gate layer 106 a has a value of 01.

In another example, instead of (or in addition to) a flag corresponding to a gate layer, any other type of data may be included in the database to indicate that a gate layer is to be non-linear. For example, in the database, for a gate layer that is to be formed non-linearly, a linearity indication layer is associated with the corresponding gate layer. FIG. 2 illustrates a design 200 of the device 100, as included in a database that is used to form the device 100, where the design 200 comprises a linearity indication layer 210 to indicate non-linearity of a gate layer. The design 200 includes diffusion layers 202 a, 202 b, 202 c,

contacts

204 a, 204 b, 204 c and 204 d, and gate layers 206 a, 206 b and 206 c, which represent the corresponding components of the device 100. In the design 200, the gate layer 206 a is designed to be a linear gate layer. The design 200 further comprises the linearity indication layer 210 that is superimposed over the gate layer 206 a and the contact 204 b. The linearity indication layer 210 acts as an indicator, to indicate that the gate layer 106 a is to be non-linear while the device 100 is to be formed or fabricated, and also indicates that a middle section of the gate layer 106 a is to be skewed away from the contact 104 b in the device 100. The linearity indication layer 210 is a virtual layer—that is, the linearity indication layer 210 exists in the design 200 included in the database, but is not actually present in the device 100. The linearity indication layer 210 indicates that the corresponding gate layer (e.g., on which the linearity indication layer 210 is superimposed) is to be formed in a non-linear manner, as illustrated in FIG. 1. By using the linearity indication layer 210, e.g., instead of actually designing the gate layer 206 a to have a non-linear shape in the design 200, may simplify the generation of the design 200 for the device 100. In an embodiment, the linearity indication layer 210 is an optical proximity correction (OPC) optimization layer.

FIGS. 3A-3F illustrate various operations associated with formation of the device 100 of FIG. 1. Similar to FIG. 1, FIGS. 3A-3F illustrate top views of the device 100, while the device 100 is being formed.

Referring to FIG. 3A, a plurality of diffusion layers 102 a, . . . , 102 c are formed. The diffusion layers 102 a, . . . , 102 c may be formed using any appropriate operation for formation of such diffusion layers. Although not illustrated in the figures, the diffusion layers 102 a, . . . , 102 c may be formed over any appropriate component or layer, e.g., may be formed over a substrate.

FIGS. 3B-3E are directed to formation of the gate layers 106 a, . . . , 106 c. Referring to FIG. 3B, a layer 306 is deposited at least partially over the diffusion layers 102 a, . . . , 102 c. In an example, the layer 306 comprises material that is used to form the gate layers 106 a, . . . , 106 c. For example, if the gate layers 106 a, . . . , 106 c comprises an appropriate metal, then the layer 306 comprises the metal. In another example, if the gate layers 106 a, . . . , 106 c comprises polysilicon, then the layer 306 comprises polysilicon.

FIG. 3C illustrates deposition of mask layers 306 a, 306 b and 306 c over the layer 306. The mask layers 306 a, 306 b and 306 c may be formed using any appropriate operation for formation of such mask layers. In an example, the shape and position of the mask layers 306 a, 306 b and 306 c respectively correspond to the shape and position of the gate layers 106 a, . . . , 106 c. In an embodiment, the mask layers 306 b and 306 c are linearly shaped, while the mask layer 306 a is shaped non-linearly corresponding to the shape of the gate layer 106 a. For example, the mask layer 306 a comprises sections 306 a 1, 306 a 2 and 306 a 3, which correspond to the respective sections 106 a 1, 106 a 2 and 106 a 3 of the gate layer 106 a of FIG. 1.

In an example, the design 200 of FIG. 2 illustrates the linearity indication layer 210 formed over the gate layer 206 a, and the mask layer 306 a is shaped non-linearly based on the linearity indication layer 210 being formed over the gate layer 206 a in the design 200. In another example, the mask layer 306 a is shaped non-linearly, based on a flag associated with the gate layer 106 a in the design of the device 100 indicating that the gate layer 106 a is to be formed non-linearly (e.g., the flag having a value of 01), as previously discussed herein.

Subsequent to the deposition of the mask layers 306 a, . . . , 306 c, the unexposed portions of the layer 306 is etched, as illustrated in FIG. 3D. While the layer 306 is being selectively etched, sections of the layer 306, which are covered by the mask layers 306 a, . . . , 306 c, are not etched. Subsequent to the selective etching of the layer 306, the mask layers 306 a, . . . , 306 c are etched, thereby forming the gate layers 106 a, . . . , 106 c, as illustrated in FIG. 3E. Selective etching of the layer 306 and the mask layers 306 a, . . . , 306 c can be performed using any appropriate manner (e.g., by employing laser etching, chemical etching, and/or the like).

Once the gate layers 106 a, . . . , 106 c are formed, the contacts 104 a, . . . , 104 d are formed, as illustrated in FIG. 3F, thereby forming the device 100. Formation of the contacts 104 a, . . . , 104 d may be performed by any appropriate operations used for forming such contacts. Although FIGS. 3A-3F illustrate formation of the contacts 104 a, . . . , 104 d subsequent to formation of the gate layers 106 a, . . . , 106 c, in another embodiment (and although not illustrated in the figures), the contacts 104 a, . . . , 104 d may be formed prior to (or along with) formation of the gate layers 106 a, . . . , 106 c.

FIGS. 4A and 4B illustrate the device 100, with sections of the gate layer 106 a being cut. FIG. 4A illustrate

jog lines

402 a and 402 b being superimposed over the device 100. The jog lines 402 a and 402 b may be formed, for example, on the design 200 of FIG. 2. The jog lines 402 a and 402 b encapsulate portions of the gate layers 106 a, . . . , 106 c. For example, the

jog lines

402 a and 402 b encapsulate portions of the section 106 a 1 and 106 a 3, respectively, of the gate layers 106 a. In an example, the

jog lines

402 a and 402 b encapsulate the boundary between the sections 160 a 1 and 160 a 2, and the boundary between the sections 160 a 2 and 160 a 3, respectively, of the gate layer 106 a.

As illustrated in FIG. 4B, the gate layers 106 a, . . . , 106 c are cut along the

jog lines

402 a and 402 b. The resultant device 400 of FIG. 4B has gate layers 406 a, 406 b and 406 c, which are formed by cutting the gate layers 106 a, . . . , 106 c, respectively. The gate layer 406 a corresponds to the section 106 a 2 of the device 100 of FIG. 1 (e.g., as the sections 106 a 1 and 106 a 3 are cut). That is, the gate layer 406 a is formed by separating the section 106 a 2 from other sections of the gate layer 106 a, such that the gate layer 406 a comprises at least a part of only the section 106 a 2. In one embodiment, the gate layer 406 a is linearly shaped.

Similar to FIG. 1, the gate layer 406 b is at a distance X from each of the

adjacent contacts

104 b and 104 c. The gate layer 406 a is at the distance Y1 from the adjacent source contact 104 a of the transistor 108 a, and is at the distance Y2 from the adjacent drain contact 104 b of the transistor 108 b. As previously discussed with respect to FIG. 1, the parasitic contact between the gate layer 406 a and the drain contact 108 b of the transistor 108 a in FIG. 4 is relatively less (e.g., due to the distance Y2 being higher than the distance Y1), thereby leading to an improved performance of the transistor 108 a of the device 400.

FIG. 5 schematically illustrates a top view of a device 500 comprising a plurality of semiconductor devices. For example, the device 500 comprises the device 100 of FIG. 1, and also

semiconductor devices

500 a and 500 b. Each of the

semiconductor devices

500 a and 500 b are at least in part similar to the device 100 of FIG. 1. For example, each of the

semiconductor devices

500 a and 500 b comprises a plurality of diffusion layers, a plurality of contacts, and a plurality of gate layers (for purposes of clarity, some of these components are not labeled in FIG. 5). For example, the device 500 a comprises gate layers 506 a, 506 b and 506 c, and the device 500 b comprises gate layers 526 a, 526 b and 526 c.

As illustrated in FIG. 5, a gate layer of one of the

semiconductor devices

100, 500 a and 500 b is coupled to a corresponding gate layer of an adjacent semiconductor device. For example, the gate layers 506 a, 106 a and 526 a are coupled or connected, resulting in a continuous gate layer. In an embodiment, the gate layers 506 a, 106 a and 526 a are formed together, e.g., using a single mask layer, as discussed with respect to FIGS. 3C-3E.

In the example of FIG. 5, none of the gate layers 506 a, 506 b and 506 c of the semiconductor device 500 a is non-linear, while the gate layer 526 b of the semiconductor device 500 b is non-linear. Although not illustrated in FIG. 5, in an embodiment, the gate layers between two adjacent semiconductor devices may be cut or segregated subsequent to the formation of the device 500, e.g., as discussed with respect to FIGS. 4A and 4B.

As illustrated in FIG. 5, the sections 106 a 1 and 106 a 3 of the gate layer 106 a of the device 100 are connected to corresponding gate layers of

adjacent semiconductor devices

500 a and 500 b, respectively. Accordingly, it is not possible to entirely shift the gate layer 106 a towards the contact 104 a (e.g., instead of making the gate layer 106 a non-linear). Put differently, as the sections 106 a 1 and 106 a 3 of the gate layer 106 a of the device 100 are connected to corresponding gate layers of

adjacent semiconductor devices

500 a and 500 b, respectively, the sections 106 a 1 and 106 a 3 of the gate layer 106 a cannot be shifted towards the contact 104 a. Accordingly, in the example of FIGS. 1 and 5, only the middle section 106 a 2 of the gate layer 106 a is shifted towards the contact 104 a, thereby resulting in the non-linear shape of the gate layer 106 a.

FIG. 6 is a flow diagram of an example method 600 for forming a semiconductor device (e.g., the

devices

100 and 400 of FIGS. 1 and 4, respectively). At 604, while designing a semiconductor device comprising a plurality of transistors, a transistor (e.g., the transistor 108 a of the device 100) for which a parasitic capacitance between a gate layer and a drain contact is to be decreased is identified. In an example, the identified transistor is used for high frequency switching operation.

At 608, while designing the semiconductor device, the design data is modified to indicate a non-linear gate layer (e.g., gate layer 106 a of FIG. 1) for the transistor. For example, in the design data, a flag with an appropriate value and/or a linearity indication layer is associated with the gate layer of the transistor to indicate the non-linear shape of the gate layer.

At 612, while forming the semiconductor device, the gate layer of the transistor is formed to have a non-linear shape. In an example, the gate layer comprises (i) a first section (e.g., section 106 a 2 of the gate layer 106 a) and (ii) a second section (e.g., section 106 a 1 of the gate layer 106 a), and the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer.

At 616, a first contact (e.g., contact 104 a of FIG. 1) and a second contact (e.g., contact 104 b of FIG. 1) are formed. In an example, the first section of the gate layer is at (i) a first distance (e.g., distance Y1) from the first contact and (ii) a second distance (e.g., distance Y2) from the second contact, and the first distance is different from the second distance. In an example, the first distance is less than the second distance. In an example, based on the first distance being less than the second distance, a parasitic or Miller capacitance between the gate layer and the second contact is less than a parasitic or Miller capacitance between the gate layer and the first contact.

The description may use the phrases “in an embodiment,” or “in embodiments,” which may each refer to one or more of the same or different embodiments. The phrase “in some embodiments” is used repeatedly. The phrase generally does not refer to the same embodiments; however, it may. The terms “comprising,” “having,” and “including” are synonymous, unless the context dictates otherwise. The phrase “A and/or B” means (A), (B), or (A and B). The phrase “A/B” means (A), (B), or (A and B), similar to the phrase “A and/or B.” The phrase “at least one of A, B and C” means (A), (B), (C), (A and B), (A and C), (B and C) or (A, B and C). The phrase “(A) B” means (B) or (A and B), that is, A is optional.

Although certain embodiments have been illustrated and described herein, a wide variety of alternate and/or equivalent embodiments or implementations calculated to achieve the same purposes may be substituted for the embodiments illustrated and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the embodiments discussed herein. Therefore, it is manifestly intended that embodiments in accordance with the present invention be limited only by the claims and the equivalents thereof.

Claims

What is claimed is:

1. A semiconductor device comprising:

a gate layer comprising (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer, and wherein the first section of the gate layer and the second section of the gate layer form a continuous section of the gate layer; and

a first contact, a second contact, a third contact, and a fourth contact,

wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance,

wherein the second section of the gate layer is substantially at a third distance from each of the third contact and the fourth contact,

wherein at least a part of the first section of the gate layer is included in a first transistor,

wherein at least a part of the second section of the gate layer is included in a second transistor, and

wherein the second transistor is different from and adjacent to the first transistor.

2. The semiconductor device of claim 1, wherein the second section of the gate layer is substantially at a same distance from each of the first contact and the second contact.

3. The semiconductor device of claim 1, wherein:

the gate layer further comprises a third section; and

the first section of the gate layer is offset with respect to the third section of the gate layer.

4. The semiconductor device of claim 3, wherein:

the second section of the gate layer is linear with respect to the third section of the gate layer.

5. The semiconductor device of claim 1, wherein:

the first contact is a drain contact of a transistor; and

the second contact is a source contact of the transistor.

6. The semiconductor device of claim 5, wherein:

based on the first contact being the drain contact and the second contact being the source contact of the transistor, the first distance is higher than the second distance.

7. The semiconductor device of claim 1, wherein:

the first contact is electrically coupled to a drain region of the first transistor; and

the second contact is electrically coupled to a source region the first transistor.

8. The semiconductor device of claim 7, wherein the first transistor comprises (i) the drain region, (ii) the first contact coupled to the drain region, (iii) the source region, (iv) the second contact coupled to the source region, and (v) at least the part of the first section of the gate layer.

9. The semiconductor device of claim 1, wherein:

a first parasitic capacitance is generated between the gate layer and the first contact;

a second parasitic capacitance is generated between the gate layer and the second contact; and

based on the non-linear shape of the gate layer, the first parasitic capacitance is different from the second parasitic capacitance.

10. A semiconductor device comprising:

a first gate layer comprising (i) a first section and (ii) a second section, wherein the first gate layer is non-linear such that the first section of the first gate layer is offset with respect to the second section of the first gate layer;

a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance;

a second gate layer, wherein the second gate layer is linearly shaped; and

a third contact,

wherein the second gate layer is at substantially a same distance from each of the second contact and the third contact.

11. A method of forming a semiconductor device, comprising:

forming a gate layer, wherein the gate layer comprises (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer, and wherein the first section of the gate layer and the second section of the gate layer form a continuous section of the gate layer;

forming a first contact, a second contact, a third contact, and a fourth contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance, wherein the second section of the gate layer is at a third distance from each of the third contact and the fourth contact;

forming a first transistor such that at least a part of the first section of the gate layer is included in the first transistor; and

forming a second transistor such that at least a part of the second section of the gate layer is included in the second transistor, wherein the second transistor is different from and adjacent to the first transistor.

12. The method of claim 11, wherein the second section of the gate layer is substantially at a same distance from each of the first contact and the second contact.

13. The method of claim 11, wherein:

the gate layer further comprises a third section;

the first section of the gate layer is offset with respect to the third section of the gate layer; and

14. The method of claim 11, further comprising:

forming a drain region of the first transistor, wherein the first contact is a drain contact that is electrically coupled to the drain region; and

forming a source region of the first transistor, wherein the second contact is a source contact that is electrically coupled to the source region,

wherein based on the first contact being the drain contact and the second contact being the source contact of the first transistor, the first distance is higher than the second distance.

15. A method of forming a semiconductor device, comprising:

while designing the semiconductor device, assigning a first value to a flag in a design of the semiconductor device, wherein the flag is associated with a gate layer, and wherein the first value indicates that the gate layer is to be non-linear and to be skewed towards a first contact;

based on the first value being assigned to the flag associated with the gate layer, forming the gate layer such that (i) the gate layer comprises the first section and a second section, (ii) the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer, and (iii) the first section of the gate layer is skewed towards the first contact; and

forming the first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance.

16. A method of forming a semiconductor device, comprising:

while designing the semiconductor device and in a design of the semiconductor device, associating a linearity indication layer with a gate layer and a first contact;

based on the linearity indication layer being associated with the gate layer and the first contact, forming the gate layer such that (i) the gate layer comprises the first section and a second section, (ii) the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer, and (iii) the first section of the gate layer is skewed towards the first contact; and

17. The method of claim 16, wherein the linearity indication layer comprises an optical proximity correction (OPC) optimization layer.

18. A method of forming a semiconductor device, comprising:

forming a gate layer, wherein the gate layer comprises (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer; and

forming a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance,

wherein forming the gate layer comprises

forming a plurality of diffusion layers,

forming a first layer over the plurality of diffusion layers,

masking at least a part of the first layer using a first mask, wherein a shape of the first mask corresponds to a shape of the gate layer,

subsequent to masking at least the part of the first layer, etching portions of the first layer that is not masked, and

subsequent to etching portions of the first layer, etching the first mask to form the gate layer.

19. A method of forming a semiconductor device, comprising:

forming a gate layer, wherein the gate layer comprises (i) a first section and (ii) a second section, wherein the gate layer is non-linear such that the first section of the gate layer is offset with respect to the second section of the gate layer;

forming a first contact and a second contact, wherein the first section of the gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance; and

forming a modified gate layer from the gate layer such that the modified gate layer comprises at least a part of the first section of the gate layer, wherein the modified gate layer does not include the second section of the gate layer.

20. A method of forming a semiconductor device, comprising:

forming a first gate layer, wherein the first gate layer comprises (i) a first section and (ii) a second section, wherein the first gate layer is non-linear such that the first section of the first gate layer is offset with respect to the second section of the first gate layer; and

forming a first contact and a second contact, wherein the first section of the first gate layer is at (i) a first distance from the first contact and (ii) a second distance from the second contact, wherein the first distance is different from the second distance,

forming a second gate layer, wherein the second gate layer is linearly shaped; and

forming a third contact, wherein the second gate layer is at substantially a same distance from each of the second contact and the third contact.