US9035679B2 - Standard cell connection for circuit routing - Google Patents
Standard cell connection for circuit routing Download PDFInfo
- Publication number
- US9035679B2 US9035679B2 US13/886,423 US201313886423A US9035679B2 US 9035679 B2 US9035679 B2 US 9035679B2 US 201313886423 A US201313886423 A US 201313886423A US 9035679 B2 US9035679 B2 US 9035679B2
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- Prior art keywords
- cells
- contact bar
- cell
- computer program
- jumper
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- G06F17/5077—
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/394—Routing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5221—Crossover interconnections
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- H01L27/0207—
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- H01L27/11807—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates generally to integrated circuit (IC) cell design and, more particularly, to manufacturing approaches for enhanced circuit routing.
- Computer-aided cell-based design has been developed for quickly designing large scale ICs such as application specific integrated circuits (ASICs) and gate arrays.
- the cell is a circuit that has been pre-designed and pre-verified as a building block.
- Design technologies known as standard cell and gate array use different types of such building blocks.
- each distinct cell in a library may have unique geometries of active, gate, and metal levels. Examples of a standard cell or gate array cell include an inverter, a NAND gate, a NOR gate, a flip-flop, and other similar logic circuits.
- CMOS complementary metal oxide semiconductor
- the cells generally have a fixed height but a variable width, which enables the cells to be placed in rows. Cells typically do not change from one design to the next, but the way in which they are interconnected will, to achieve the desired function in a given design.
- the designer can quickly implement a desired functionality without having to custom design the entire integrated circuit from scratch. Thus, the designer will have a certain level of confidence that the integrated circuit will work as intended when manufactured without having to worry about the details of the individual transistors that make up each cell.
- Cells are normally designed so that routing connections between cells can be made as efficiently as possible. Routing in an IC design is accomplished through routing elements, such as wires in one or more metal layers. Each metal layer is separated from other metal layers by insulating layers, and vias connect one metal layer to another. These routing elements perform at least two functions: they connect individual transistors that make up a cell, and they connect cells to each other globally (i.e., on a chip-level) to implement the desired functionality of the integrated circuit. For example, clock signals, reset signals, test signals, and supply voltages may be carried through these routing elements.
- a well-designed cell layout minimizes congestion in routing global interconnections, which reduces the number of metal layers in or overall size of an integrated circuit layout.
- a common standard cell architecture will have metal 1 (M 1 ) pins that are primarily on a vertical orientation and connected by horizontal metal 2 (M 2 ) wires.
- M 1 metal 1
- M 2 metal 2
- the available horizontal M 2 routing resources to connect each cell are also fixed. Therefore, when no horizontal M 2 route resource is available to connect to the M 1 pin, a bended M 2 wire may be used, as shown in FIG. 2 .
- the bended M 2 wire is inefficient as it blocks other horizontal M 2 tracks.
- an M 2 power rail is provided to reduce current density on existing M 1 power rails and to improve circuit reliability. Unfortunately, this makes cross-power-rail M 2 bending impossible. Therefore, what is needed is a solution to at least this deficiency of the prior art.
- an IC device having a plurality of cells, a first metal layer (M 1 ) pin coupled to a contact bar extending from a first cell of the plurality of cells, and a second metal layer (M 2 ) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail.
- M 1 first metal layer
- M 2 second metal layer
- One aspect of the present invention includes an integrated circuit (IC) device comprising: a plurality of cells; a first metal layer (M 1 ) pin coupled to a contact bar extending from a first cell of the plurality of cells; and a second metal layer (M 2 ) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail.
- IC integrated circuit
- Another aspect of the present invention includes a computer program product for an improved standard cell connection for circuit routing, the computer program product comprising: a computer readable storage device storing computer program instructions, the computer program instructions being executable by a computer, the computer program instructions including: providing a plurality of cells; forming a first metal layer (M 1 ) pin coupled to a contact bar extending from a first cell of the plurality of cells; and forming a second metal layer (M 2 ) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail.
- a computer readable storage device storing computer program instructions, the computer program instructions being executable by a computer, the computer program instructions including: providing a plurality of cells; forming a first metal layer (M 1 ) pin coupled to a contact bar extending from a first cell of the plurality of cells; and forming a second metal layer (M 2 ) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail.
- M 1 first metal layer
- M 2
- Another aspect of the present invention provides a method for an improved standard cell connection for circuit routing in an integrated circuit (IC), the method comprising: providing a plurality of cells; forming a first metal layer (M 1 ) pin coupled to a contact bar extending from a first cell of the plurality of cells; and forming a second metal layer (M 2 ) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail.
- IC integrated circuit
- FIG. 1 shows a top view of a prior art semiconductor device
- FIG. 2 shows a top view of a prior art semiconductor device with a bended M 2 wire
- FIG. 3 shows a side cross-sectional view of an IC device following its formation according to an illustrative embodiment
- FIG. 4 shows a top cross sectional view of the IC device following its formation according to illustrative embodiments.
- FIG. 5 shows a schematic of an exemplary computing environment according to illustrative embodiments.
- an IC device having a plurality of cells, a first metal layer (M 1 ) pin coupled to a contact bar extending from a first cell of the plurality of cells, and a second metal layer (M 2 ) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail.
- M 1 first metal layer
- M 2 second metal layer
- first element such as a first structure, e.g., a first layer
- second element such as a second structure, e.g. a second layer
- intervening elements such as an interface structure, e.g. interface layer
- a cell described herein refers to predefined circuit unit or circuit element that is provided, as part of a cell library of many different types of circuit units, to an integrated circuit designer.
- the cell is typically re-used in multiple instances as needed to make up the integrated circuit.
- a cell may be an inverter, a NAND gate, a NOR gate, a flip flop, and other similar logic circuits.
- Each cell has a boundary, typically consisting of four edges that form a rectangular shape.
- a cell pin, (i.e., metal pin, pin, etc.) described herein refers to metal wires within a cell that serve as connection points for external connections to a cell (e.g., connections between one cell and another cell).
- Cell pins are sometimes referred to as cell ports, although the term cell pin is meant to include both cell pins and cell ports.
- Cell pins may be input pins, which are the connection points for the input signals of a standard cell.
- Cell pins may be output pins, which are connection points for the output signals of a standard cell. The locations of the pins are designated by the designer of the cell when creating.
- the present invention extends a contact bar across at least one power rail to route and extend the M 1 pin.
- FIG. 3 shows a cross section of IC device 100 following formation of a set of gates 102 in dielectric material 104 , and a subsequent deposition and planarization of a hard mask (not shown).
- IC device 100 further comprises source/drain (S/D) contacts 112 , formed by a Ca pattern defined in the photoresist by a lithography process.
- a selective Ca etch is performed to remove the opened (i.e., exposed) dielectric material and hard mask, and the remaining trenches are filled with a conductive material (e.g., Tungsten) to form Ca contacts 112 .
- This process is repeated to form gate contacts 114 in IC device 100 .
- a Cb pattern is defined in the photoresist by a lithography process.
- a selective Cb etch is then performed to remove the opened (i.e., exposed) dielectric material and hard mask, and the remaining trenches are filled with a conductive material (e.g., Tungsten) to form Cb contacts 114 .
- IC device 100 further comprises a second hard mask layer 118 formed over Ca contacts 112 and Cb contacts 114 , a third dielectric layer 120 formed over second hard mask layer 118 , a third hard mask layer 122 formed over third dielectric layer 120 , and a fourth dielectric layer 124 formed over third mask layer 122 .
- IC device 100 further comprises first metal layers 130 and VO, and a metal cap 132 is atop first metal layers 130 , as shown in FIG. 3 .
- IC 100 comprises a plurality of cells 140 A-N and a set of power rails 142 A-N extending along intersections between one or more cells.
- a first metal layer (M 1 ) pin 130 -A is shown formed on first cell 140 A, and couples with VO.
- M 2 second metal layer
- a contact bar 154 configured to extend across a boundary of first cell 140 A and power rail 142 A, thereby connecting M 1 pin 130 -A with an M 1 jumper 130 -B and second metal layer 150 .
- M 1 jumper 130 -B is generated on contact bar 154 , and couples to second metal layer 150 at V 1 .
- contact bar 154 is formed to extend into an open (i.e., free) area 158 of IC device 100 between plurality of cells 140 A-N. That is, inherent to the manufacture and design process, is a large number of open areas that are generally underutilized. However, the approach herein takes advantage of this space by extending contact bar 154 across the boundary of first cell 140 A and power rail 142 A, and into open area 158 . Contact bar 154 passes under power rail 142 A to connect M 1 and M 2 via M 1 jumper 130 -B Therefore, contact bar 154 provides this connection to enable the desired functionality for the design.
- system 200 that facilitates extending pin accessibility for circuit routing in an integrated circuit (IC).
- system 200 includes computer system 202 deployed within a computer infrastructure 204 .
- This is intended to demonstrate, among other things, that embodiments can be implemented within a network environment 206 (e.g., the Internet, a wide area network (WAN), a local area network (LAN), a virtual private network (VPN), etc.), a cloud-computing environment, or on a stand-alone computer system.
- network environment 206 e.g., the Internet, a wide area network (WAN), a local area network (LAN), a virtual private network (VPN), etc.
- VPN virtual private network
- computer infrastructure 204 is intended to demonstrate that some or all of the components of system 200 could be deployed, managed, serviced, etc., by a service provider who offers to implement, deploy, and/or perform the functions of the present invention for others.
- Computer system 202 is intended to represent any type of computer system that may be implemented in deploying/realizing the teachings recited herein.
- computer system 202 represents an illustrative system for an improved standard cell connection for circuit routing in an IC. It should be understood that any other computers implemented under various embodiments may have different components/software, but will perform similar functions.
- computer system 202 includes a processing unit 208 capable of operating with a layout tool 210 stored in a memory unit 212 to provide pin accessibility for circuit routing. Also shown is a bus 213 , and device interfaces 215 .
- Processing unit 208 refers, generally, to any apparatus that performs logic operations, computational tasks, control functions, etc.
- a processor may include one or more subsystems, components, and/or other processors.
- a processor will typically include various logic components that operate using a clock signal to latch data, advance logic states, synchronize computations and logic operations, and/or provide other timing functions.
- processing unit 108 receives signals transmitted over a LAN and/or a WAN (e.g., T1, T3, 56 kb, X.25), broadband connections (ISDN, Frame Relay, ATM), wireless links (802.11, Bluetooth, etc.), and so on.
- the signals may be encrypted using, for example, trusted key-pair encryption.
- Different systems may transmit information using different communication pathways, such as Ethernet or wireless networks, direct serial or parallel connections, USB, Firewire®, Bluetooth®, or other proprietary interfaces.
- Ethernet is a registered trademark of Apple Computer, Inc.
- Bluetooth is a registered trademark of Bluetooth Special Interest Group (SIG)).
- processing unit 208 executes computer program code, such as program code for layout tool 210 , which is stored in memory unit 212 and/or storage system 214 . While executing computer program code, processing unit 208 can read and/or write data to/from memory unit 212 and storage system 214 .
- Storage system 214 may comprise VCRs, DVRs, RAID arrays, USB hard drives, optical disk recorders, flash storage devices, and/or any other data processing and storage elements for storing and/or processing data.
- computer system 202 could also include I/O interfaces that communicate with one or more hardware components of computer infrastructure 204 that enable a user to interact with computer system 202 (e.g., a keyboard, a display, camera, etc.).
- Layout tool 210 of computer infrastructure 204 is configured to operate with a fabricator 218 for designing and patterning features of an IC.
- layout tool 210 can be provided and configured to create the datasets used to pattern the semiconductor layers as described herein. For example data sets can be created to generate photomasks used during lithography operations to pattern the layers for structures as described herein.
- Such design tools can include a collection of one or more modules and can also be comprised of hardware, software or a combination thereof.
- layout tool 210 can be a collection of one or more software modules, hardware modules, software/hardware modules or any combination or permutation thereof.
- layout tool 210 can be a computing device or other appliance on which software runs or in which hardware is implemented.
- a module might be implemented utilizing any form of hardware, software, or a combination thereof.
- processors for example, one or more processors, controllers, ASICs, PLAs, logical components, software routines or other mechanisms might be implemented to make up a module.
- the various modules described herein might be implemented as discrete modules or the functions and features described can be shared in part or in total among one or more modules.
- the various features and functionality described herein may be implemented in any given application and can be implemented in one or more separate or shared modules in various combinations and permutations.
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Abstract
Description
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US13/886,423 US9035679B2 (en) | 2013-05-03 | 2013-05-03 | Standard cell connection for circuit routing |
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US13/886,423 US9035679B2 (en) | 2013-05-03 | 2013-05-03 | Standard cell connection for circuit routing |
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US20140327153A1 US20140327153A1 (en) | 2014-11-06 |
US9035679B2 true US9035679B2 (en) | 2015-05-19 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9859891B1 (en) | 2016-06-24 | 2018-01-02 | Qualcomm Incorporated | Standard cell architecture for reduced parasitic resistance and improved datapath speed |
US10283526B2 (en) | 2016-12-21 | 2019-05-07 | Qualcomm Incorporated | Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop |
WO2019132870A1 (en) * | 2017-12-27 | 2019-07-04 | Intel Corporation | Pin must-connects for improved performance |
US10366954B1 (en) | 2018-04-25 | 2019-07-30 | Globalfoundries Inc. | Structure and method for flexible power staple insertion |
US10541243B2 (en) | 2015-11-19 | 2020-01-21 | Samsung Electronics Co., Ltd. | Semiconductor device including a gate electrode and a conductive structure |
US10699998B2 (en) | 2017-09-11 | 2020-06-30 | Samsung Electronics Co., Ltd. | Semiconductor devices with insulated source/drain jumper structures |
TWI709214B (en) * | 2015-11-19 | 2020-11-01 | 南韓商三星電子股份有限公司 | Semiconductor devices and methods of fabricating the same |
US20210286927A1 (en) * | 2018-10-31 | 2021-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pin access hybrid cell height design |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9165102B1 (en) * | 2014-04-07 | 2015-10-20 | Freescale Semiconductor, Inc. | Routing standard cell-based integrated circuits |
US10262981B2 (en) * | 2016-04-29 | 2019-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit, system for and method of forming an integrated circuit |
US10740531B2 (en) | 2016-11-29 | 2020-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit, system for and method of forming an integrated circuit |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10541243B2 (en) | 2015-11-19 | 2020-01-21 | Samsung Electronics Co., Ltd. | Semiconductor device including a gate electrode and a conductive structure |
TWI709214B (en) * | 2015-11-19 | 2020-11-01 | 南韓商三星電子股份有限公司 | Semiconductor devices and methods of fabricating the same |
US9859891B1 (en) | 2016-06-24 | 2018-01-02 | Qualcomm Incorporated | Standard cell architecture for reduced parasitic resistance and improved datapath speed |
US10283526B2 (en) | 2016-12-21 | 2019-05-07 | Qualcomm Incorporated | Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop |
US10699998B2 (en) | 2017-09-11 | 2020-06-30 | Samsung Electronics Co., Ltd. | Semiconductor devices with insulated source/drain jumper structures |
US11398425B2 (en) | 2017-09-11 | 2022-07-26 | Samsung Electronics Co., Ltd. | Semiconductor devices with insulated source/drain jumper structures |
WO2019132870A1 (en) * | 2017-12-27 | 2019-07-04 | Intel Corporation | Pin must-connects for improved performance |
US11409935B2 (en) | 2017-12-27 | 2022-08-09 | Intel Corporation | Pin must-connects for improved performance |
US10366954B1 (en) | 2018-04-25 | 2019-07-30 | Globalfoundries Inc. | Structure and method for flexible power staple insertion |
US10658294B2 (en) | 2018-04-25 | 2020-05-19 | Globalfoundries Inc. | Structure and method for flexible power staple insertion |
US20210286927A1 (en) * | 2018-10-31 | 2021-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pin access hybrid cell height design |
US11768991B2 (en) * | 2018-10-31 | 2023-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pin access hybrid cell height design |
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