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US7303993B2 - Chemical mechanical polishing compositions and methods relating thereto - Google Patents

Chemical mechanical polishing compositions and methods relating thereto Download PDF

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US7303993B2
US7303993B2 US10/882,568 US88256804A US7303993B2 US 7303993 B2 US7303993 B2 US 7303993B2 US 88256804 A US88256804 A US 88256804A US 7303993 B2 US7303993 B2 US 7303993B2
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Prior art keywords
copolymer
acid
gum
polishing
composition
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US20060000151A1 (en
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Francis J. Kelley
John Quanci
Joseph K. So
Hongyu Wang
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Rohm and Haas Electronic Materials CMP Holdings Inc
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Assigned to ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC. reassignment ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KELLEY, FRANCIS J., SO, JOSEPH K., WANG, HONGYU, QUANCI, JOHN
Priority to CNB200510082371XA priority patent/CN100355820C/en
Priority to TW094121112A priority patent/TWI396727B/en
Priority to JP2005193259A priority patent/JP4937536B2/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the invention relates to chemical mechanical planarization (CMP) of semiconductor wafer materials and, more particularly, to CMP compositions and methods for polishing metal interconnects on semiconductor wafers in the presence of dielectrics and barrier materials.
  • CMP chemical mechanical planarization
  • a semiconductor wafer is a wafer of silicon with a dielectric layer containing multiple trenches arranged to form a pattern for circuit interconnects within the dielectric layer.
  • the pattern arrangements usually have a damascene structure or dual damascene structure.
  • a barrier layer covers the patterned dielectric layer and a metal layer covers the barrier layer.
  • the metal layer has at least sufficient thickness to fill the patterned trenches with metal to form circuit interconnects.
  • CMP processes often include multiple polishing steps. For example, a first step removes excess interconnect metals, such as copper at an initial high rate. After the first step removal, a second step polishing can remove metal that remains on the barrier layer outside of the metal interconnects. Subsequent polishing removes the barrier from an underlying dielectric layer of a semiconductor wafer to provide a planar polished surface on the dielectric layer and the metal interconnects.
  • a first step removes excess interconnect metals, such as copper at an initial high rate.
  • a second step polishing can remove metal that remains on the barrier layer outside of the metal interconnects. Subsequent polishing removes the barrier from an underlying dielectric layer of a semiconductor wafer to provide a planar polished surface on the dielectric layer and the metal interconnects.
  • the metal in a trench or trough on the semiconductor substrate provides a metal line forming a metal circuit.
  • One of the problems to be overcome is that the polishing operation tends to remove metal from each trench or trough, causing recessed dishing of such metal. Dishing is undesirable as it causes variations in the critical dimensions of the metal circuit.
  • polishing is performed at a lower polishing pressure. However, merely reducing the polishing pressure would require that polishing continue for a lengthened duration. However, dishing would continue to be produced for the entire lengthened duration. What is needed is a method to reduce dishing of metal in trenches or troughs without lengthening the duration of the polishing operation. Polishing compositions that leave a surface clear of interconnect metal residue after a short second step polishing time are needed.
  • U.S. Pat. No. 6,632,259 describes the use of engineered copolymers in aqueous polishing compositions for CMP. These include copolymers derived from a mixture comprising acrylic acid monomer and methacrylic acid monomer at a mole ratio of acrylic acid monomer to methacrylic acid monomer of about 1:20 to about 20:1. These are disclosed in polishing compositions that do not comprise a modified cellulose.
  • the present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.
  • the present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer blends of a first and a second copolymer formed from acrylic acid and methacrylic acid, the first copolymer being different than the second copolymer and balance water, wherein the copolymers of acrylic acid and methacrylic acid have a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymers have a molecular weight in the range of 1 K to 1000 K.
  • the invention provides a method for polishing of a nonferrous metal on a semiconductor wafer comprising, contacting the wafer with a polishing composition, the wafer containing the nonferrous metal, the polishing composition comprising oxidizer, inhibitor for the nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer blends of a first and a second copolymer formed from acrylic acid and methacrylic acid, the first copolymer being different from the second copolymer and balance water, wherein the copolymer blends of acrylic acid and methacrylic acid have a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:9 to 9:1 and the copolymers have a molecular weight in the range of 1 K to 1000 K, and polishing the wafer with a polishing pad.
  • a polishing composition comprising oxidizer, inhibitor for the nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01
  • FIG. 1 is a graphical description of clear time.
  • the composition and method provide good metal removal rates and adequate metal clearing without excessive dishing of the metal interconnects when a semiconductor wafer is exposed to CMP.
  • the composition of the present invention utilizes water soluble copolymers of acrylic acid and methacrylic acid along with water soluble cellulose modified with carboxylic acid functionality.
  • the present invention has particular usefulness in copper interconnects, the present aqueous polishing composition also provides enhanced polishing of other nonferrous metal interconnects, such as aluminum, gold, nickel, platinum group metals, silver, tungsten, and alloys thereof.
  • copolymer blend refers to solutions containing two or more different copolymers, such as different molecular weights or monomer blend ratios. Typically, one copolymer has a different or greater molecular weight than a second copolymer. Alternatively, the copolymers may have different blend ratios or different polymer structures. Typically, the copolymer blend improves the composition's clearing ability and dishing performance. Optionally, adjusting the proportion of copolymers in the blend can control or effect the nonferrous metal's removal rate, such as copper removal rate. Preferably, the polishing composition contains 0.001 to 10 weight percent total copolymer blend.
  • suitable monomers that may be used for producing the copolymer blend are silicon containing compounds (e.g., silanes, cyclic siloxanes); metal containing compounds (e.g., tributyl tin methacrylate, vinyl ferrocene); nitroso containing compounds (e.g., tri-fluoro-nitrosomethane); aromatic or (cyclo)aliphatic esters (e.g., diallyl pththalates); aromatic compounds substituted by hetero atoms/groups (e.g., bisphenol allylether, cinnamic acid, coumarone, vinyl benzene sulfonic acid, chloromethyl styrene, vinyl benzoate); alkenyl aromatic compounds or aromatic compounds substituted by hydrocarbyl groups (e.g., divinylbenzene, divinyltoluene, vinyl toluene, styrene, alpha-methyl styrene); (cyclo)alipha
  • the copolymer blend constitutes a combination of two or more copolymers formed from acrylic acid and methacrylic acid.
  • a first copolymer formed from acrylic acid and methacrylic acid may have a molecular weight of 1 K to 100 K and the second copolymer may have a molecular weight of greater than 100 K to 1000 K.
  • molecular weight refers to weight average molecular weight.
  • a first copolymer formed from acrylic acid and methacrylic acid may have a molecular weight of 1 K to 100 K and the second copolymer may have a molecular weight of greater than 100 K to 1000 K.
  • the copolymers of this invention are synthesized utilizing acrylic acid monomer and methacrylic acid monomer at a mole ratio in a range of 1:30 to 30:1; preferably in a range of 1:9 to 9:1; and most preferably about 2:3.
  • the copolymers of this invention have a molecular weight in the range of 1 K to 1000 K; preferably in the range of 10 K to 500 K.
  • the polishing composition of this invention contains water soluble cellulose modified with carboxylic acid functionality.
  • the composition contains 0.01 to 5.0 weight percent of water soluble cellulose.
  • the composition contains about 0.3 weight percent of water soluble cellulose.
  • modified cellulose are anionic gums such as agar gum, arabic gum, ghatti gum, karaya gum, guar gum, pectin, locust bean gum, tragacanth gums, tamarind gum, carrageenan gum, and xantham gum, modified starch, alginic acid, mannuronic acid, guluronic acid, and their modifications and combinations.
  • the preferred water soluble cellulose carboxy methyl cellulose (CMC)
  • CMC carboxy methyl cellulose
  • Degree of substitution in CMC is the number of hydroxyl groups on each anhydroglucose unit in the cellulose molecule that is substituted. It can be considered as a measure of the “density” of carboxylic acid groups in the CMC.
  • the solution contains up to 25 weight percent oxidizer. More preferably, the oxidizer is in the range of 5 to 10 weight percent.
  • the oxidizer is particularly effective at assisting the solution in removing copper at low pH ranges.
  • the oxidizing agent can be at least one of a number of oxidizing compounds, such as hydrogen peroxide (H 2 O 2 ), monopersulfates, iodates, magnesium perphthalate, peracetic acid and other per-acids, persulfates, bromates, periodates, nitrates, iron salts, cerium salts, Mn (III), Mn (IV) and Mn (VI) salts, silver salts, copper salts, chromium salts, cobalt salts, halogens, hypochlorites and a mixture thereof.
  • the polishing slurry contains an unstable oxidizing agent such as, hydrogen peroxide, it is often most advantageous to mix the oxidizer into the composition
  • the solution contains inhibitor to control copper interconnect removal rate by static etch or other removal mechanism. Adjusting the concentration of an inhibitor adjusts the interconnect metal removal rate by protecting the metal from static etch.
  • the solution contains 0.05 to 5.0 weight percent inhibitor. Most preferably, the solution contains 0.2 to 1.0 weight percent inhibitor.
  • the inhibitor may consist of a mixture of inhibitors.
  • Azole inhibitors are particularly effective for copper and silver interconnects. Typical azole inhibitors include benzotriazole (BTA), mercaptobenzothiazole (MBT), tolytriazole (TTA) and imidazole. BTA is a particularly effective inhibitor for copper and silver.
  • the composition preferably contains complexing agent for the nonferrous metal.
  • the complexing agent may facilitate the removal rate of the metal film, such as copper.
  • the composition contains 0.01 to 15 weight percent complexing agent for the nonferrous metal.
  • the composition contains 0.1 to 1 weight percent complexing agent for the nonferrous metal.
  • Example complexing agents include acetic acid, citric acid, ethyl acetoacetate, glycolic acid, lactic acid, malic acid, oxalic acid, salicylic acid, sodium diethyl dithiocarbamate, succinic acid, tartaric acid, thioglycolic acid, glycine, alanine, aspartic acid, ethylene diamine, trimethyl diamine, malonic acid, gluteric acid, 3-hydroxybutyric acid, propionic acid, phthalic acid, isophthalic acid, 3-hydroxy salicylic acid, 3,5-dihydroxy salicylic acid, gallic acid, gluconic acid, pyrocatechol, pyrogallol, tannic acid, including, salts and mixtures thereof.
  • the complexing agent is selected from the group consisting of acetic acid, citric acid, ethyl acetoacetate, glycolic acid, lactic acid, malic acid, oxalic acid and mixtures thereof. Most preferably, the complexing agent is malic acid.
  • the compounds provide efficacy over a broad pH range in solutions containing a balance of water.
  • This solution's useful pH range extends from at least 2 to 5.
  • the solution preferably relies upon a balance of deionized water to limit incidental impurities.
  • the pH of the polishing fluid of this invention is preferably from 2.5 to 4.2, more preferably a pH of 2.6 to 3.8.
  • the acids used to adjust the pH of the composition of this invention are, for example, nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid and the like.
  • Exemplary bases used to adjust the pH of the composition of this invention are, for example, ammonium hydroxide and potassium hydroxide.
  • the polishing composition may optionally contain up to 3 weight percent abrasive to facilitate metal layer removal. Within this range, it is desirable to have the abrasive present in an amount of less than or equal to 1 weight percent. Most preferably, the polishing compositions of the present invention are abrasive free.
  • the abrasive has an average particle size of less than or equal to 500 nanometers (nm) for preventing excessive metal dishing, dielectric erosion and improving planarization.
  • particle size refers to the average particle size of the abrasive. More preferably, it is desirable to use a colloidal abrasive having an average particle size of less than or equal to 100 nm. Further, decreased dielectric erosion and metal dishing occur with colloidal silica having an average particle size of less than or equal to 70 nm.
  • the preferred colloidal abrasive may include additives, such as dispersants, surfactants, buffers, and biocides to improve the stability of the colloidal abrasive.
  • One such colloidal abrasive is colloidal silica from Clariant S. A., of Puteaux, France.
  • other abrasives including, those that are fumed, precipitated, agglomerated, etc., may be utilized.
  • the polishing composition may include the abrasive for “mechanical” removal of metal interconnect layers.
  • Example abrasives include inorganic oxides, inorganic hydroxides, inorganic hydroxide oxides, metal borides, metal carbides, metal nitrides, polymer particles and mixtures comprising at least one of the foregoing.
  • Suitable inorganic oxides include, for example, silica (SiO 2 ), alumina (Al 2 O 3 ), zirconia (ZrO 2 ), ceria (CeO 2 ), manganese oxide (MnO 2 ), titanium oxide (TiO 2 ) or combinations comprising at least one of the foregoing oxides.
  • Suitable inorganic hydroxide oxides include, for example, aluminum hydroxide oxide (“boehmite”). Modified forms of these inorganic oxides, such as, organic polymer-coated inorganic oxide particles and inorganic coated particles may also be utilized if desired.
  • Suitable metal carbides, boride and nitrides include, for example, silicon carbide, silicon nitride, silicon carbonitride (SiCN), boron carbide, tungsten carbide, zirconium carbide, aluminum boride, tantalum carbide, titanium carbide, or combinations comprising at least one of the foregoing metal carbides, boride and nitrides. Diamond may also be utilized as an abrasive if desired.
  • Alternative abrasives also include polymeric particles, coated polymeric particles, and surfactant stabilized particles. The preferred abrasive, if utilized, is silica.
  • composition of the present invention is applicable to any semiconductor wafer containing a conductive metal, such as copper, aluminum, tungsten, platinum, palladium, gold, or iridium; a barrier or liner film, such as tantalum, tantalum nitride, titanium, or titanium nitride; and an underlying dielectric layer.
  • a conductive metal such as copper, aluminum, tungsten, platinum, palladium, gold, or iridium
  • barrier or liner film such as tantalum, tantalum nitride, titanium, or titanium nitride
  • dielectric refers to a semi-conducting material of dielectric constant, k, which includes low-k and ultra-low k dielectric materials.
  • composition and method are excellent for preventing erosion of multiple wafer constituents, for example, porous and nonporous low-k dielectrics, organic and inorganic low-k dielectrics, organic silicate glasses (OSG), fluorosilicate glass (FSG), carbon doped oxide (CDO), tetraethylorthosilicate (TEOS) and a silica derived from TEOS.
  • OSG organic silicate glasses
  • FSG fluorosilicate glass
  • CDO carbon doped oxide
  • TEOS tetraethylorthosilicate
  • TEOS tetraethylorthosilicate
  • silica derived from TEOS a silica derived from TEOS.
  • the compositions of this invention may also be used for ECMP (Electrochemical Mechanical Polishing).
  • reaction mixture is held for another 1 hr at 92° C. then let cool to room temperature.
  • 20 g of 50% NaOH and 380 g of water is used to dilute crude product to 24.45%, 800 g of crude product is diluted further to 10% solution.
  • compositions contain, by weight percent, 0.50 BTA, 0.22 malic acid, 0.32 carboxymethylcellulose (CMC), and 9.00 hydrogen peroxide at a pH of 2.8.
  • the experiment measured copper polishing rates and determined the clearing of residual copper from a semiconductor wafer at a moderate down force pressure.
  • the test determined the effect of the utilization of modified cellulose compounds in the presence of copolymers of acrylic acid and methacrylic acid on the polishing rate, clear time, and residual copper clearing.
  • Clear time is defined as EPD2-EPD1, where EPD1 is the initial endpoint detection time at which the reflection of the metal films on the wafer starts to change. EPD2 is the detection time at which the reflection at the metal films on the wafer stops changing.
  • FIG. 1 graphically shows this definition of clear time. An Applied Materials, Inc.
  • Mirra 200 mm polishing machine equipped with an ISRM detector system using an IC1010TM polyurethane polishing pad (Rohm and Haas Electronic Materials CMP Inc.) under downforce conditions of about 2 psi (13.8 kPa), a polishing solution flow rate of 150 cc/min, a platen speed of 80 RPM, and a carrier speed of 40 RPM planarized the samples.
  • the polishing solutions had a pH adjusted with nitric acid. All solutions contained deionized water.

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Abstract

The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Description

BACKGROUND OF THE INVENTION
The invention relates to chemical mechanical planarization (CMP) of semiconductor wafer materials and, more particularly, to CMP compositions and methods for polishing metal interconnects on semiconductor wafers in the presence of dielectrics and barrier materials.
Typically, a semiconductor wafer is a wafer of silicon with a dielectric layer containing multiple trenches arranged to form a pattern for circuit interconnects within the dielectric layer. The pattern arrangements usually have a damascene structure or dual damascene structure. A barrier layer covers the patterned dielectric layer and a metal layer covers the barrier layer. The metal layer has at least sufficient thickness to fill the patterned trenches with metal to form circuit interconnects.
CMP processes often include multiple polishing steps. For example, a first step removes excess interconnect metals, such as copper at an initial high rate. After the first step removal, a second step polishing can remove metal that remains on the barrier layer outside of the metal interconnects. Subsequent polishing removes the barrier from an underlying dielectric layer of a semiconductor wafer to provide a planar polished surface on the dielectric layer and the metal interconnects.
The metal in a trench or trough on the semiconductor substrate provides a metal line forming a metal circuit. One of the problems to be overcome is that the polishing operation tends to remove metal from each trench or trough, causing recessed dishing of such metal. Dishing is undesirable as it causes variations in the critical dimensions of the metal circuit. To reduce dishing, polishing is performed at a lower polishing pressure. However, merely reducing the polishing pressure would require that polishing continue for a lengthened duration. However, dishing would continue to be produced for the entire lengthened duration. What is needed is a method to reduce dishing of metal in trenches or troughs without lengthening the duration of the polishing operation. Polishing compositions that leave a surface clear of interconnect metal residue after a short second step polishing time are needed.
U.S. Pat. No. 6,632,259 describes the use of engineered copolymers in aqueous polishing compositions for CMP. These include copolymers derived from a mixture comprising acrylic acid monomer and methacrylic acid monomer at a mole ratio of acrylic acid monomer to methacrylic acid monomer of about 1:20 to about 20:1. These are disclosed in polishing compositions that do not comprise a modified cellulose.
STATEMENT OF THE INVENTION
In a first aspect, the present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.
In a second aspect, the present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer blends of a first and a second copolymer formed from acrylic acid and methacrylic acid, the first copolymer being different than the second copolymer and balance water, wherein the copolymers of acrylic acid and methacrylic acid have a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymers have a molecular weight in the range of 1 K to 1000 K.
In a third aspect, the invention provides a method for polishing of a nonferrous metal on a semiconductor wafer comprising, contacting the wafer with a polishing composition, the wafer containing the nonferrous metal, the polishing composition comprising oxidizer, inhibitor for the nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer blends of a first and a second copolymer formed from acrylic acid and methacrylic acid, the first copolymer being different from the second copolymer and balance water, wherein the copolymer blends of acrylic acid and methacrylic acid have a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:9 to 9:1 and the copolymers have a molecular weight in the range of 1 K to 1000 K, and polishing the wafer with a polishing pad.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a graphical description of clear time.
 DETAILED DESCRIPTION
The composition and method provide good metal removal rates and adequate metal clearing without excessive dishing of the metal interconnects when a semiconductor wafer is exposed to CMP. The composition of the present invention utilizes water soluble copolymers of acrylic acid and methacrylic acid along with water soluble cellulose modified with carboxylic acid functionality. Although the present invention has particular usefulness in copper interconnects, the present aqueous polishing composition also provides enhanced polishing of other nonferrous metal interconnects, such as aluminum, gold, nickel, platinum group metals, silver, tungsten, and alloys thereof.
For purposes of the specification, copolymer blend refers to solutions containing two or more different copolymers, such as different molecular weights or monomer blend ratios. Typically, one copolymer has a different or greater molecular weight than a second copolymer. Alternatively, the copolymers may have different blend ratios or different polymer structures. Typically, the copolymer blend improves the composition's clearing ability and dishing performance. Optionally, adjusting the proportion of copolymers in the blend can control or effect the nonferrous metal's removal rate, such as copper removal rate. Preferably, the polishing composition contains 0.001 to 10 weight percent total copolymer blend. Examples of suitable monomers that may be used for producing the copolymer blend are silicon containing compounds (e.g., silanes, cyclic siloxanes); metal containing compounds (e.g., tributyl tin methacrylate, vinyl ferrocene); nitroso containing compounds (e.g., tri-fluoro-nitrosomethane); aromatic or (cyclo)aliphatic esters (e.g., diallyl pththalates); aromatic compounds substituted by hetero atoms/groups (e.g., bisphenol allylether, cinnamic acid, coumarone, vinyl benzene sulfonic acid, chloromethyl styrene, vinyl benzoate); alkenyl aromatic compounds or aromatic compounds substituted by hydrocarbyl groups (e.g., divinylbenzene, divinyltoluene, vinyl toluene, styrene, alpha-methyl styrene); (cyclo)aliphatic nitriles (e.g., acrylonitrile, cyanoacrylic acid, cyanoacrylates, vinylidene cyanide); (cyclo)aliphatic aldehydes or ketones (e.g., acrolein, diacetone acrylamide); (cyclo)aliphatic carboxylic acids, anhydrides or salts (acrylic acid, maleic anhydride, acrylic anhydrides); alcohols (e.g., methanol, ethanol, propanol, dihydric and polyhydric alcohols, ethylene glycol, pentaerythritol, cyclohexane dimethanol); cycloaliphatic alcohols (e.g., allyl alcohol); (cyclo)aliphatic carboxylic esters (e.g., methyl methacrylate, vinyl acetate, dibutyl maleate, aminoalkyl acrylates); (cyclo)aliphatic halides (e.g., vinylidene chloride, tetrafluoroethylene, fluoroacrylates); (cyclo)aliphatic hydrocarbons (e.g., ethylene, propylene, tetrafluoroethylene, diisobutylene, norbornene); (cyclo)aliphatic hydrocarbons substituted with hydrocarbyl groups (e.g., butadiene, isoprene, allene, dicyclopentadiene, piperylene); triazines (e.g., melamines, guanamines); isothiocyanates (toluene diisocyanate, isophorone diisocyanate); amides (e.g., ureas); lactams or amino acids (e.g., caprolactam, aminocaproic acid, glutamic acid); amines (aniline, hexamethylene diamine, hexamethylene tetramine, piperidene, ethylene imine); mono-epoxy compounds (epihalohydrin, ethylene oxide, monoglycidyl ether/ester; glycidol, thiiranes); cyclic ethers (e.g., tetrahydrofuran); aldehydes; ketones; cyclic thioethers; phenols (monohydric phenols, polyhydric phenols, cresols, resorcinol, bisphenol A); compounds containing carbon-carbon double bonds (trimethylolpropane triacrylate, diallyl maleate, pentaerythritol tetraacrylate); compounds containing carbon-carbon triple bonds (acetylene, propargyl alcohol); compounds containing both carbon-carbon double and carbon-carbon triple bonds (e.g., vinyl acetylene, dimethyl vinyl ethynyl carbinol); or combinations comprising at least one of the foregoing monomers. Preferably, the copolymer blend constitutes a combination of two or more copolymers formed from acrylic acid and methacrylic acid. For example, a first copolymer formed from acrylic acid and methacrylic acid may have a molecular weight of 1 K to 100 K and the second copolymer may have a molecular weight of greater than 100 K to 1000 K. For purposes of this specification, molecular weight refers to weight average molecular weight. Preferably, a first copolymer formed from acrylic acid and methacrylic acid may have a molecular weight of 1 K to 100 K and the second copolymer may have a molecular weight of greater than 100 K to 1000 K.
Preferably, the copolymers of this invention are synthesized utilizing acrylic acid monomer and methacrylic acid monomer at a mole ratio in a range of 1:30 to 30:1; preferably in a range of 1:9 to 9:1; and most preferably about 2:3. The copolymers of this invention have a molecular weight in the range of 1 K to 1000 K; preferably in the range of 10 K to 500 K.
The polishing composition of this invention contains water soluble cellulose modified with carboxylic acid functionality. Preferably, the composition contains 0.01 to 5.0 weight percent of water soluble cellulose. Most preferably, the composition contains about 0.3 weight percent of water soluble cellulose. Exemplary modified cellulose are anionic gums such as agar gum, arabic gum, ghatti gum, karaya gum, guar gum, pectin, locust bean gum, tragacanth gums, tamarind gum, carrageenan gum, and xantham gum, modified starch, alginic acid, mannuronic acid, guluronic acid, and their modifications and combinations. The preferred water soluble cellulose, carboxy methyl cellulose (CMC), has a degree of substitution of 0.1 to 3.0 with a molecular weight of 1 K to 1000 K. More preferred CMC has a degree of substitution of 0.7 to 1.2 with a molecular weight of 40 K to 250 K. Degree of substitution in CMC is the number of hydroxyl groups on each anhydroglucose unit in the cellulose molecule that is substituted. It can be considered as a measure of the “density” of carboxylic acid groups in the CMC.
Preferably, the solution contains up to 25 weight percent oxidizer. More preferably, the oxidizer is in the range of 5 to 10 weight percent. The oxidizer is particularly effective at assisting the solution in removing copper at low pH ranges. The oxidizing agent can be at least one of a number of oxidizing compounds, such as hydrogen peroxide (H2O2), monopersulfates, iodates, magnesium perphthalate, peracetic acid and other per-acids, persulfates, bromates, periodates, nitrates, iron salts, cerium salts, Mn (III), Mn (IV) and Mn (VI) salts, silver salts, copper salts, chromium salts, cobalt salts, halogens, hypochlorites and a mixture thereof. Furthermore, it is often advantageous to use a mixture of oxidizer compounds. When the polishing slurry contains an unstable oxidizing agent such as, hydrogen peroxide, it is often most advantageous to mix the oxidizer into the composition at the point of use.
Further, the solution contains inhibitor to control copper interconnect removal rate by static etch or other removal mechanism. Adjusting the concentration of an inhibitor adjusts the interconnect metal removal rate by protecting the metal from static etch. Preferably, the solution contains 0.05 to 5.0 weight percent inhibitor. Most preferably, the solution contains 0.2 to 1.0 weight percent inhibitor. The inhibitor may consist of a mixture of inhibitors. Azole inhibitors are particularly effective for copper and silver interconnects. Typical azole inhibitors include benzotriazole (BTA), mercaptobenzothiazole (MBT), tolytriazole (TTA) and imidazole. BTA is a particularly effective inhibitor for copper and silver.
In addition to the inhibitor, the composition preferably contains complexing agent for the nonferrous metal. The complexing agent may facilitate the removal rate of the metal film, such as copper. Preferably, the composition contains 0.01 to 15 weight percent complexing agent for the nonferrous metal. Most preferably, the composition contains 0.1 to 1 weight percent complexing agent for the nonferrous metal. Example complexing agents include acetic acid, citric acid, ethyl acetoacetate, glycolic acid, lactic acid, malic acid, oxalic acid, salicylic acid, sodium diethyl dithiocarbamate, succinic acid, tartaric acid, thioglycolic acid, glycine, alanine, aspartic acid, ethylene diamine, trimethyl diamine, malonic acid, gluteric acid, 3-hydroxybutyric acid, propionic acid, phthalic acid, isophthalic acid, 3-hydroxy salicylic acid, 3,5-dihydroxy salicylic acid, gallic acid, gluconic acid, pyrocatechol, pyrogallol, tannic acid, including, salts and mixtures thereof. Preferably, the complexing agent is selected from the group consisting of acetic acid, citric acid, ethyl acetoacetate, glycolic acid, lactic acid, malic acid, oxalic acid and mixtures thereof. Most preferably, the complexing agent is malic acid.
The compounds provide efficacy over a broad pH range in solutions containing a balance of water. This solution's useful pH range extends from at least 2 to 5. In addition, the solution preferably relies upon a balance of deionized water to limit incidental impurities. The pH of the polishing fluid of this invention is preferably from 2.5 to 4.2, more preferably a pH of 2.6 to 3.8. The acids used to adjust the pH of the composition of this invention are, for example, nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid and the like. Exemplary bases used to adjust the pH of the composition of this invention are, for example, ammonium hydroxide and potassium hydroxide.
Further, the polishing composition may optionally contain up to 3 weight percent abrasive to facilitate metal layer removal. Within this range, it is desirable to have the abrasive present in an amount of less than or equal to 1 weight percent. Most preferably, the polishing compositions of the present invention are abrasive free.
The abrasive has an average particle size of less than or equal to 500 nanometers (nm) for preventing excessive metal dishing, dielectric erosion and improving planarization. For purposes of this specification, particle size refers to the average particle size of the abrasive. More preferably, it is desirable to use a colloidal abrasive having an average particle size of less than or equal to 100 nm. Further, decreased dielectric erosion and metal dishing occur with colloidal silica having an average particle size of less than or equal to 70 nm. In addition, the preferred colloidal abrasive may include additives, such as dispersants, surfactants, buffers, and biocides to improve the stability of the colloidal abrasive. One such colloidal abrasive is colloidal silica from Clariant S. A., of Puteaux, France. Also, other abrasives, including, those that are fumed, precipitated, agglomerated, etc., may be utilized.
The polishing composition may include the abrasive for “mechanical” removal of metal interconnect layers. Example abrasives include inorganic oxides, inorganic hydroxides, inorganic hydroxide oxides, metal borides, metal carbides, metal nitrides, polymer particles and mixtures comprising at least one of the foregoing. Suitable inorganic oxides include, for example, silica (SiO2), alumina (Al2O3), zirconia (ZrO2), ceria (CeO2), manganese oxide (MnO2), titanium oxide (TiO2) or combinations comprising at least one of the foregoing oxides. Suitable inorganic hydroxide oxides include, for example, aluminum hydroxide oxide (“boehmite”). Modified forms of these inorganic oxides, such as, organic polymer-coated inorganic oxide particles and inorganic coated particles may also be utilized if desired. Suitable metal carbides, boride and nitrides include, for example, silicon carbide, silicon nitride, silicon carbonitride (SiCN), boron carbide, tungsten carbide, zirconium carbide, aluminum boride, tantalum carbide, titanium carbide, or combinations comprising at least one of the foregoing metal carbides, boride and nitrides. Diamond may also be utilized as an abrasive if desired. Alternative abrasives also include polymeric particles, coated polymeric particles, and surfactant stabilized particles. The preferred abrasive, if utilized, is silica.
The composition of the present invention is applicable to any semiconductor wafer containing a conductive metal, such as copper, aluminum, tungsten, platinum, palladium, gold, or iridium; a barrier or liner film, such as tantalum, tantalum nitride, titanium, or titanium nitride; and an underlying dielectric layer. For purposes of the specification, the term dielectric refers to a semi-conducting material of dielectric constant, k, which includes low-k and ultra-low k dielectric materials. The composition and method are excellent for preventing erosion of multiple wafer constituents, for example, porous and nonporous low-k dielectrics, organic and inorganic low-k dielectrics, organic silicate glasses (OSG), fluorosilicate glass (FSG), carbon doped oxide (CDO), tetraethylorthosilicate (TEOS) and a silica derived from TEOS. The compositions of this invention may also be used for ECMP (Electrochemical Mechanical Polishing).
EXAMPLES
To make high molecular weight (˜200,000 MW) AA/MAA 2:3 by mole) copolymer use 75 g AA 100% acrylic acid, 135 g MAA 100% methacrylic acid, 0.5 g+1.9 g NaPS Na2S2O8, MW=238.1, 270 g+42 g+380 g DI water, 20 g 50% NaOH. 25 g of mixed monomers is charged to a 4-neck 2000 ml reactor followed by 270 g of DI water and 0.5 g of sodium persulfate. The mixture is heated up to 92° C. then the rest of mixed monomers and the solution of 1.9 g of sodium persulfate in 42 g of water are co-fed to the reactor for 40 and 50 minutes. The reaction mixture is held for another 1 hr at 92° C. then let cool to room temperature. GC and GPC of crude product are checked and 10% acid is neutralized by 50% NaOH solution. This procedure gives Mw/Mn=198,000/30,000, AA=532 ppm, MAA=38 ppm, pH=3.7, % solid of the crude product is 45.6%. 20 g of 50% NaOH and 380 g of water is used to dilute crude product to 24.45%, 800 g of crude product is diluted further to 10% solution.
To make a low MW (˜27,000) AA/MAA (2:3 by mole) copolymer use 179 g AA (100% acrylic acid), 321 g MAA (100% methacrylic acid), 23.4 g NaPS (Na2S208), 815 g+110 g DI water, and 49.7 g 50% NaOH solution. 25 g of mixed monomers is charged to a 4-necked 2000 ml reactor followed by 815 g of DI water and 2.4 g of sodium persulfate. The mixture is heated to 95° C. then the rest of mixed monomers and the solution of 21 g of sodium persulfate in 110 g of water are co-fed to the reactor for 140 and 160 minutes, respectively. The reaction mixture is held for another 1 hr at 92° C. then let cool to room temperature. 49.7 g of 50% NaOH is used to neutralize 10% acid. This procedure gives Mw/Mn=30860/6656, AA=0 ppm, MAA=47 ppm, pH=1.2. 49.7 g of 50% NaOH is used to neutralize the crude product to pH=3.6. Final % solids=37.8%.
In the Example all compositions contain, by weight percent, 0.50 BTA, 0.22 malic acid, 0.32 carboxymethylcellulose (CMC), and 9.00 hydrogen peroxide at a pH of 2.8.
The experiment measured copper polishing rates and determined the clearing of residual copper from a semiconductor wafer at a moderate down force pressure. In particular, the test determined the effect of the utilization of modified cellulose compounds in the presence of copolymers of acrylic acid and methacrylic acid on the polishing rate, clear time, and residual copper clearing. Clear time is defined as EPD2-EPD1, where EPD1 is the initial endpoint detection time at which the reflection of the metal films on the wafer starts to change. EPD2 is the detection time at which the reflection at the metal films on the wafer stops changing. FIG. 1 graphically shows this definition of clear time. An Applied Materials, Inc. Mirra 200 mm polishing machine equipped with an ISRM detector system using an IC1010™ polyurethane polishing pad (Rohm and Haas Electronic Materials CMP Inc.) under downforce conditions of about 2 psi (13.8 kPa), a polishing solution flow rate of 150 cc/min, a platen speed of 80 RPM, and a carrier speed of 40 RPM planarized the samples. The polishing solutions had a pH adjusted with nitric acid. All solutions contained deionized water.
TABLE 1
Av. Dishing Clear
Blend AA/MAA MW Wt % 90%/100 um Clearing Time
1 2:3  27K 0.05 567/551 No 24
2:3  23K 0.05
2 2:3  22K 0.033 732/885 Yes 22
2:3 200K 0.033
2:3  23K 0.033
3 2:3 200K 0.033 651/536 Yes 24
2:3  27K 0.033
2:3  23K 0.033
4 2:3  22K 0.033 520/514 No 23
2:3  27K 0.033
2:3  23K 0.033
5 2:3  22K 0.05 714/557 Yes
2:3 200K 0.05
6 2:3 200K 0.05 502/552 Yes
2:3  27K 0.05
7 2:3 200K 0.05 616/557 Yes
2:3  23K 0.05
As illustrated in Table 1, the addition of copolymer blends at a mole ratio of 2:3 acrylic acid to methacrylic acid and at an amount of 0.1 weight percent provides both adequate dishing and clearing. The dishing results are an average of step height ASH results for center and edge positions at 90% and 100 μm on a 200 mm Sematech 854 mask TEOS wafer. Although some residual copper was found on most samples, the clear times were all less than 30 seconds. One can see that a copolymer blend which contains at least 0.033 of a high molecular weight copolymer (˜200 K) always provides residual copper clearing. The presence of high molecular weight copolymer does give higher dishing results so that one can tune the amounts and the molecular weights to give adequate clearing and satisfactory dishing. Furthermore, adjusting the proportion of high and low molecular weight copolymer can control (increase or decrease) the copper removal rate.

Claims (7)

1. A method for polishing of a semiconductor wafer, the semiconductor wafer having copper interconnect metal and residual copper, comprising the steps of:
contacting the wafer with a polishing composition, the polishing composition comprising oxidizer, inhibitor for the copper interconnect metal, complexing agent for copper, 0 to 3% by weight abrasive particle, 0.01 to 3% by weight modified cellulose, the modified cellulose having carboxylic acid functionality, 0.01 to 5% by weight copolymer blends of a first and a second copolymer each being formed from acrylic acid and methacrylic acid, the first copolymer being different from the second copolymer and balance water, wherein the copolymer blends of acrylic acid and methacrylic acid have a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymers have a molecular weight in the range of 1K to 1000K, and polishing the wafer with a polishing pad and the molecular weight of the first copolymer is different than the second copolymer; and
clearing residual copper from the wafer with a polishing pad, wherein a weight percent ratio of the first copolymer to the second copolymer adjusts dishing and clearing of the copper interconnect metal, and further wherein a clearing time for clearing residual copper from the wafer is less than 30 seconds.
2. The method of claim 1 wherein the first copolymer has a molecular weight of 1K to 100K and the second copolymer has a molecular weight of above 100K to 1000K.
3. The method of claim 1 including a modified cellulose that is water soluble cellulose modified with a carboxylic acid functionality selected from carboxy methyl cellulose, agar gum, arabic gum, ghatti gum, karaya gum, guar gum, pectin, locust bean gum, tragacanth gums, tamarind gum, carrageenan gum, and xantham gum, modified starch, alginic acid, mannuronic acid, guluronic acid, and their modifications, copolymers, and mixtures.
4. The method of claim 3 wherein the modified cellulose is carboxy methyl cellulose.
5. The method of claim 1 wherein the composition is abrasive free.
6. The method of claim 2 wherein the composition is abrasive free.
7. The method of claim 4 wherein the composition is abrasive free.
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