US6356066B1 - Voltage reference source - Google Patents
Voltage reference source Download PDFInfo
- Publication number
- US6356066B1 US6356066B1 US09/703,632 US70363200A US6356066B1 US 6356066 B1 US6356066 B1 US 6356066B1 US 70363200 A US70363200 A US 70363200A US 6356066 B1 US6356066 B1 US 6356066B1
- Authority
- US
- United States
- Prior art keywords
- voltage
- source
- output voltage
- weight coefficients
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000003247 decreasing effect Effects 0.000 claims description 7
- 238000012886 linear function Methods 0.000 claims description 6
- 238000004377 microelectronic Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/265—Current mirrors using bipolar transistors only
Definitions
- the invention relates to a voltage reference source, and in particular, to the voltage reference source operable at a low voltage supply, for example of the order of 1.5V.
- An object of this invention is to provide an improved voltage reference source.
- a method of forming an output voltage comprising the steps of:
- the method further comprises the step of selecting the weight coefficients so as to provide the output voltage having a predetermined magnitude and predetermined function of the temperature.
- the method comprises the step of selecting the weight coefficients so as to control magnitude and temperature dependence of the output voltage independently.
- the weight coefficients may be selected so as to provide the output voltage which is independent of the temperature, or alternatively, to provide the output voltage which is an increasing or decreasing function of the temperature.
- it may be arranged that the increasing or decreasing function of the temperature are linear functions.
- the first weight coefficient is less than unity, i.e. m 1 ⁇ 1.
- the output voltage is proportional to a bandgap voltage, e.g. equal to a fraction of the bandgap voltage, the bandgap voltage being typically 1.244V.
- a method of forming a reference voltage comprising the steps of:
- the step of forming the output voltage is performed so as to provide that the output voltage is equal to a fraction of the bandgap voltage.
- a voltage reference source comprising:
- the weight coefficients are selected so as to provide the output voltage having a predetermined magnitude and predetermined function of the temperature.
- the weight coefficients are selected so that the magnitude and temperature dependence of the output voltage can be controlled independently, e.g. the magnitude of the output voltage is determined by absolute magnitudes of the weight coefficients, and the temperature dependence of the source is controlled by relative magnitudes of the weight coefficients.
- the output voltage is independent of the temperature or has an increasing or decreasing function of temperature, the function being preferably linear functions.
- the first weight coefficient should be less than unity, i.e. m 1 ⁇ 1.
- the output voltage is proportional to a. bandgap voltage, e.g. equal to a fraction of the bandgap voltage.
- the voltage reference source includes three transistors only which are coupled in parallel and balanced with a number of resistors. It allows for a low voltage supply of the circuitry because the lower limit of the voltage supply is defined by only one base-emitter voltage which is typically below 1V.
- a reference voltage source comprising:
- a voltage reference source comprising:
- collector and base of the first transistor being connected to the base of the second transistor and to a through the first resistor to an output terminal;
- collector of the second transistor being connected to the base of the third transistor and through the second resistor to the output terminal;
- emitters of the first and third transistors being connected to a negative voltage terminal directly with the emitter of the third transistor being connected to the negative voltage terminal through the third resistor;
- fourth and fifth resistors being connected across base-emitter junctions of the third and first transistors respectively.
- the output terminal is connected to a positive voltage terminal through a resistance means or through a current source.
- the reference voltage source is operable at a low voltage supply, wherein the low voltage supply is of the order of 1.5V and lower.
- the voltage reference source circuit includes three transistors only connected in parallel and a number of resistors.
- FIG. 1 illustrates a voltage reference circuit according to an embodiment of the invention.
- FIG. 1 illustrates a voltage reference source 10 according to the embodiment of the invention. It comprises first, second and third NPN transistors 12 , 14 , 16 , and six resistors 18 , 20 , 22 , 24 , 26 and 28 .
- the resistors are referred to as in the following manner: the resistor 18 is referred to as a first resistor, 20 as a second resistor, 22 as a third resistor, 24 as a fourth resistor, 26 as a fifth resistor, and 28 as a sixth resistor.
- the transistor 12 has its emitter connected to negative voltage terminal or ground (0V), and its collector connected to its base and via resistor 18 to an output terminal designated by line 30 on which the circuit produces a reference voltage V r .
- the transistor 14 has its emitter connected via the resistor 22 to ground (0V), its base connected to the base of the transistor 12 .
- the transistor 14 is being sized relative to the transistor 12 to provide a current density through the transistor 14 which is lower than through the transistor 12 , the ratio of current densities being for example of about 8.
- the collector of the transistor 14 is connected via the resistor 20 to the line 30 .
- the transistor 16 has its base connected to the collector of the transistor 14 , its emitter connected to ground (0V), and its collector connected to line 30 .
- Resistors 24 and 26 are connected across base-emitter junctions of transistors 12 and 16 respectively, and the resistor 28 is connected between line 30 and a positive voltage terminal +V.
- the reference voltage V r and voltage produced on the resistor 20 referred to as an output voltage have predetermined temperature characteristics and provide independent control of the voltage magnitude as will be described in detail below.
- the circuit 10 operates in the following manner. According to the Ohm's law, current i 26 through the resistor 26 may be expressed as follows:
- a first voltage V 1 defined as a voltage drop on the resistor 20 produced by the current i 26 is equal to:
- V 1 i 26
- R 20 ( R 20 /R 26 )
- V be16 m 1 V be16 (2)
- R 20 is a magnitude of the resistor 20
- m 1 is a first weight coefficient
- V 2 a second voltage V 2 , defined as a voltage drop on the resistor 20 produced by current i 14 , which flows through the transistor 14 and resistor 22 , can be performed in the following manner.
- a collector current of a bipolar transistor may be expressed as follows (see, e.g. a textbook “Microelectronics Circuits” by Adel S. Sedra and Kenneth C. Smith, Oxford University Press, 1991)
- V T is a thermal voltage
- A is an emitter area
- V be is a voltage between the base and emitter.
- a 12 and A 14 are areas of transistors 12 and 14 respectively, and V be12 and V be14 are corresponding voltages between their bases and emitters.
- V be12 - V be14 V T ⁇ ln ⁇ ⁇ ( i 12 i 14 ⁇ A 14 A 12 ⁇ ) ( 7 )
- i 14 V T ⁇ ln ⁇ ⁇ ( i 12 i 14 ⁇ A 14 A 12 ⁇ ) R 22 ( 8 )
- the output voltage V out equal to the voltage drop on resistor 20 has two components V 1 and V 2 and may be expressed as
- the reference voltage V r is formed by adding another base-emitter voltage V be16 to the output voltage V out , thus providing the required biasing voltage that is widely used in microelectronics applications:
- V r V out +V be16 (11)
- the magnitude and temperature dependence of the output voltage can be controlled independently by proper selection of absolute and relative value's of weight coefficients.
- V r kV bg +V be16 , i.e. the reference voltage is a fraction of the bandgap voltage plus one base-emitter voltage, the voltage which is required for biasing purposes.
- the circuit may comprise different types of transistors, e.g. MOSFET, FET hetero-junction or any other known transistors.
- the first to fifth resistors may comprise a combination of resistors, or alternatively any other semiconductor devices having resistance.
- the sixth resistor 28 may be replaced with any known resistance means or a current source.
- the circuit described above has simple design, occupies less area compared to other known reference voltage circuits and correspondingly dissipates less heat and consumes less power. Due to the use of a minimal number of transistors, which are connected in parallel, the circuit is operable at much lower voltage supply than other known circuits, e.g. of the order of 1.5V or lower. Additionally, it provides an independent control of the magnitude of the reference voltage and its temperature dependence.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2303543 | 2000-03-30 | ||
CA002303543A CA2303543A1 (en) | 2000-03-30 | 2000-03-30 | Voltage reference source |
Publications (1)
Publication Number | Publication Date |
---|---|
US6356066B1 true US6356066B1 (en) | 2002-03-12 |
Family
ID=4165734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/703,632 Expired - Fee Related US6356066B1 (en) | 2000-03-30 | 2000-11-02 | Voltage reference source |
Country Status (2)
Country | Link |
---|---|
US (1) | US6356066B1 (en) |
CA (1) | CA2303543A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060082410A1 (en) * | 2004-10-14 | 2006-04-20 | Khan Qadeer A | Band-gap reference circuit |
US10739808B2 (en) * | 2018-05-31 | 2020-08-11 | Richwave Technology Corp. | Reference voltage generator and bias voltage generator |
WO2024169734A1 (en) * | 2023-02-13 | 2024-08-22 | 南京南瑞继保电气有限公司 | Voltage device, voltage simulation apparatus, and control method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639661A (en) * | 1985-09-03 | 1987-01-27 | Advanced Micro Devices, Inc. | Power-down arrangement for an ECL circuit |
US4775829A (en) * | 1986-12-16 | 1988-10-04 | Deutsche Itt Industries Gmbh | On-chip voltage stabilizing circuit |
US5049806A (en) * | 1988-12-28 | 1991-09-17 | Kabushiki Kaisha Toshiba | Band-gap type voltage generating circuit for an ECL circuit |
US5057709A (en) * | 1990-11-01 | 1991-10-15 | Motorola Inc. | Current threshold detector circuit |
US5721484A (en) * | 1996-12-19 | 1998-02-24 | Vtc, Inc. | Power supply filter with active element assist |
US5754038A (en) * | 1996-09-03 | 1998-05-19 | Motorola, Inc. | Method and circuit for current regulation |
US6225855B1 (en) * | 1993-08-31 | 2001-05-01 | Fujitsu Limited | Reference voltage generation circuit using source followers |
US6232756B1 (en) * | 1999-03-31 | 2001-05-15 | Sony Corporation | Band gap reference circuit |
-
2000
- 2000-03-30 CA CA002303543A patent/CA2303543A1/en not_active Abandoned
- 2000-11-02 US US09/703,632 patent/US6356066B1/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639661A (en) * | 1985-09-03 | 1987-01-27 | Advanced Micro Devices, Inc. | Power-down arrangement for an ECL circuit |
US4775829A (en) * | 1986-12-16 | 1988-10-04 | Deutsche Itt Industries Gmbh | On-chip voltage stabilizing circuit |
US5049806A (en) * | 1988-12-28 | 1991-09-17 | Kabushiki Kaisha Toshiba | Band-gap type voltage generating circuit for an ECL circuit |
US5057709A (en) * | 1990-11-01 | 1991-10-15 | Motorola Inc. | Current threshold detector circuit |
US6225855B1 (en) * | 1993-08-31 | 2001-05-01 | Fujitsu Limited | Reference voltage generation circuit using source followers |
US5754038A (en) * | 1996-09-03 | 1998-05-19 | Motorola, Inc. | Method and circuit for current regulation |
US5721484A (en) * | 1996-12-19 | 1998-02-24 | Vtc, Inc. | Power supply filter with active element assist |
US6232756B1 (en) * | 1999-03-31 | 2001-05-15 | Sony Corporation | Band gap reference circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060082410A1 (en) * | 2004-10-14 | 2006-04-20 | Khan Qadeer A | Band-gap reference circuit |
US7084698B2 (en) | 2004-10-14 | 2006-08-01 | Freescale Semiconductor, Inc. | Band-gap reference circuit |
US10739808B2 (en) * | 2018-05-31 | 2020-08-11 | Richwave Technology Corp. | Reference voltage generator and bias voltage generator |
WO2024169734A1 (en) * | 2023-02-13 | 2024-08-22 | 南京南瑞继保电气有限公司 | Voltage device, voltage simulation apparatus, and control method |
Also Published As
Publication number | Publication date |
---|---|
CA2303543A1 (en) | 2001-09-30 |
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Owner name: NORTEL NETWORKS LIMITED, CANADA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ILIASEVITCH, STEPAN;REEL/FRAME:011294/0767 Effective date: 20001031 |
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