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US20080216885A1 - Spectrally adaptive multijunction photovoltaic thin film device and method of producing same - Google Patents

Spectrally adaptive multijunction photovoltaic thin film device and method of producing same Download PDF

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Publication number
US20080216885A1
US20080216885A1 US11/714,681 US71468107A US2008216885A1 US 20080216885 A1 US20080216885 A1 US 20080216885A1 US 71468107 A US71468107 A US 71468107A US 2008216885 A1 US2008216885 A1 US 2008216885A1
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modules
junction
optical energy
module
energy
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US11/714,681
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Sergey Frolov
Allan James Bruce
Joseph Shmulovich
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SUNLIGHT ACQUISITION Inc
Sunlight Aerospace Inc
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Individual
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Priority to US11/714,681 priority Critical patent/US20080216885A1/en
Assigned to INPLANE PHOTONICS, INC. reassignment INPLANE PHOTONICS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FROLOV, SERGEY, BRUCE, ALLAN JAMES, SHMULOVICH, JOSEPH
Assigned to SUNLIGHT PHOTONICS INC. reassignment SUNLIGHT PHOTONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INPLANE PHOTONICS, INC.
Priority to EP08726292A priority patent/EP2122688A4/fr
Priority to PCT/US2008/002724 priority patent/WO2008108990A1/fr
Publication of US20080216885A1 publication Critical patent/US20080216885A1/en
Assigned to SUNLIGHT ACQUISITION, INC. reassignment SUNLIGHT ACQUISITION, INC. BILL OF SALE AND ASSIGNMENT AGREEMENT Assignors: SUNLIGHT PHOTONICS INC.
Assigned to SUNLIGHT PHOTONICS INC. reassignment SUNLIGHT PHOTONICS INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SUNLIGHT ACQUISITION, INC.
Assigned to VENEARTH FUND, LLC reassignment VENEARTH FUND, LLC SECURITY AGREEMENT Assignors: SUNLIGHT PHOTONICS INC.
Priority to US13/074,390 priority patent/US20110174366A1/en
Priority to US14/146,207 priority patent/US10043929B1/en
Assigned to SUNLIGHT AEROSPACE INC. reassignment SUNLIGHT AEROSPACE INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: SUNLIGHT PHOTONICS INC.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the following relates to photovoltaic devices and methods of producing such devices. More particularly, the following relates to photovoltaic devices that have substantially improved optical spectral responsivity and efficiency, and that can be produced by laminating or otherwise integrating multiples of discrete photovoltaic devices.
  • Photovoltaic devices represent one of the major sources of environmentally clean and renewable energy. They are frequently used to convert optical energy into electrical energy. Typically, a photovoltaic device is made of one semiconducting material with p-doped and n-doped regions. The conversion efficiency of solar power into electricity of this device is limited to a maximum of about 37%, since photon energy in excess of the semiconductor's bandgap is wasted as heat. A photovoltaic device with multiple semiconductor layers of different bandgaps is more efficient: an optimized two-bandgap photovoltaic device has the maximum solar conversion efficiency of 50%, whereas a three-bandgap photovoltaic device has the maximum solar conversion efficiency of 56%. Realized efficiencies are typically less than theoretical values in all cases.
  • Multi-layered or multi-junction devices are currently manufactured as monolithic wafers, where each semiconductor layer is crystal-grown on top of the previous one.
  • the semiconductor layers are electrically connected in series and have to be current-matched, in order to obtain maximum conversion efficiency.
  • This current-matching procedure complicates the design and decreases the efficiency of the device. The latter becomes particularly evident when considering the effect of spectral filtering on the device efficiency. If a part of the solar spectrum is absorbed or scattered, e.g. by water vapors, the resulting disproportional decrease of photocurrent in one of junctions will limit the current through the whole device and thus decrease its conversion efficiency.
  • the apparatus includes a substrate, a plurality of thin-film single-junction photovoltaic layers disposed on said substrate and a plurality of electrical contacts to each of said layers.
  • the plurality of photovoltaic layers may be semi-conducting and have different respective bandgaps so as to increase the conversion efficiency of the device.
  • the said layers may further be at least partially transparent in the spectral energy range below their respective bandgaps.
  • the said layers may further be electrically isolated from each other.
  • the plurality of electrical contacts is arranged to receive independent electrical currents from each of the photovoltaic layers, so as to further increase conversion efficiency and provide spectrally adaptive capabilities of a device with respect color and intensity variations in incident or absorbed light.
  • a method for converting optical energy to electrical energy in a spectrally adaptive manner. The method begins by directing optical energy into a first photovoltaic module that includes non-single crystalline semiconductor layers defining a junction such that a first spectral portion of the optical energy is converted into a first quantity of electrical energy. A second spectral portion of the optical energy unabsorbed by the first module is absorbed by a second photovoltaic module that includes non-single crystalline semiconductor layers defining a junction and converted into a second quantity of electrical energy. The first quantity of electrical energy is conducted from the first module to a first external electrical circuit along a first path. The second quantity of electrical energy is conducted from the second module to a second external electrical circuit along a second path that is in parallel with the first path.
  • a method for converting optical energy with a given spectral profile to electrical energy.
  • the method begins by receiving optical energy on an uppermost module of a photovoltaic device that includes a plurality of modules stacked one on top of another.
  • a first spectral portion of the optical energy is converted to electrical energy.
  • the uppermost module has a first fill factor determined in part by the given spectral profile of the first spectral portion of the optical energy.
  • a remaining portion of the optical energy is transferred to a second module located below the uppermost module. At least a fraction of the remaining portion of the optical energy is converted to electrical energy.
  • the second module has a second fill factor largely independent of the first fill factor of the uppermost module and determined in part by the given spectral profile of the remaining spectral portion of the optical energy.
  • FIG. 1 is the schematic diagram of thin-film multi-junction photovoltaic device with spectrally adaptive capabilities.
  • FIG. 2 is the cross-section of a multi-layered multi-junction photovoltaic thin film stack.
  • FIG. 3 is the schematic diagram for external electrical connections providing a single voltage electrical terminal.
  • Embodiments of this apparatus and method may facilitate the ability to efficiently and economically convert electromagnetic energy in the form of light into electrical energy in the form of electrical current. Embodiments of this apparatus and method may also facilitate large volume production and widespread usage of photovoltaic devices.
  • This invention utilizes thin-film technology as an alternative method of producing a multi-junction photovoltaic device.
  • multi-junction devices in general are a more efficient means for conversion solar energy into electricity.
  • the development of these devices is currently hindered by the complexity of semiconductor manufacturing processes and their high cost.
  • thin-film processing is substantially less complex and expensive. Using new design approaches and thin-film technology, a new efficient photovoltaic device with expanded capabilities and application range can be produced.
  • single-crystal semiconductors are grown epitaxially, layer-by-layer on a monolithic wafer.
  • Thin-film materials in contrast, depending on their chemical origin can be deposited and layered by a variety of different methods, using for example evaporation, sputtering, spraying, inkjet printing etc., some of which could be very inexpensive.
  • some thin-film layers can be produced separately and then integrated hybridly using bonding, lamination and other similar methods.
  • the entire structure may be sequentially grown without the need for any mechanical integration of the individual layers. This flexibility in a manufacturing method makes it possible to implement new design approaches in producing a better photovoltaic device.
  • each junction layer ( 111 , 112 and 113 ) includes a single junction with an optically active semiconductor having a specific bandgap.
  • each so-called junction layer includes at least two sublayers that define a junction at their interface.
  • the junction may be a heterojunction in which the sublayers are formed of dissimilar materials.
  • the junction may be of any type known in the art such as, but not limited to, p-i-n junctions, MIS junctions and the like.
  • the number of junction layers, n may be larger than two.
  • the semiconductor material may be, for example, a compound semiconductor formed from an inorganic, polymer-based material, an organic dye-based material, a nanoparticle composite material, a quantum dot composite material, or a mixture of the above materials.
  • Said junction layers are situated in a stack one above another in said multi-layered device. When this photovoltaic device is illuminated by light 101 , each one of its junction layers may absorb a part of light with photon energies above a corresponding bandgap and transmit a part of light with photon energies below a corresponding bandgap ( 102 and 103 ).
  • junction layers may be arranged so that the bandgaps of lower lying junctions are smaller than the bandgaps of higher lying junctions; this condition improves the conversion efficiency of the device. Furthermore, these junction layers may be electrically isolated from each other and provided with at least two individual electrical contacts 130 of opposite polarity for producing electrical current. All the junction layers may be attached to a common substrate that may be sturdy yet flexible. The substrate also may be coated with a reflective layer. One or more surfaces in this device could be textured to provide a relief pattern for multiple light reflections and scattering, which increase absorption length and improve conversion efficiency.
  • Thin-film technology greatly simplifies the production of a multi-junction, non-single crystalline (e.g., polycrystalline, amorphous) photovoltaic device. Furthermore, it enables the production of large area, single-sheet, photovoltaic multi-junction devices. The latter is not possible using a standard single-crystal semiconductor technology due to the typically limited and small size of semiconductor wafers.
  • Thin-film layers formed from various compound semiconductors may be manufactured as large sheets and laminated, or otherwise joined, together to form a single large area, low-cost device. Moreover, one may define a figure-of-merit for a photovoltaic device as the ratio of its conversion efficiency to the manufacturing cost per unit area:
  • thin-film non-single crystalline multi-junction devices will provide the highest attainable FOM. Indeed, their conversion efficiency is estimated to be in the range of 30% to 50% and comparable to that of a single crystal multi-junction device, whereas a single junction thin-film photovoltaic device has efficiency of less than 20%. Yet at the same time, their manufacturing cost is estimated to be two orders of magnitude lower than that of a single crystal multi-junction device. Thus, it is estimated that FOM of thin-film multi-junction devices could be about 100 times larger than that of a single crystal multi-junction device and 3-5 times larger than that of a single junction thin-film device.
  • this invention further improves photovoltaic conversion technology by providing separate contact layers 130 and electrical contacts 140 for each junction layer in thin-film multijunction device.
  • Each contact pair 140 acts as a separate, independent photovoltaic source, thus producing n sets of currents and voltages: from I 1 and V 1 , I 2 and V 2 , to I n and V n , where n is the number of junctions.
  • This provision eliminates the need for the current matching condition, which in turn results in a simpler design and manufacturing process, a more robust and fault tolerant performance, higher conversion efficiency and an adaptive capability with respect to changes in the spectral content of light used for conversion.
  • the latter property of the multijunction photovoltaic device allows the photovoltaic device to operate at its maximum possible efficiency regardless of any optical filtering effects that may occur during its operation. That is, with spectral adaptation, if the spectral content or profile of the optical energy changes, the conversion efficiency of the device will not decrease to as large an extent as it would if the junctions in the device were required to be current matched. This is because the fill factor of each junction can be largely tailored to the spectral content of the optical energy independent of the other junctions in the device. Also, a failure of any of the thin-film junction layers will not result in failure of the whole device, since they are electrically isolated.
  • An additional benefit of this modular manufacturing approach is that a toolbox of individual cell components with different bandgaps could be separately developed and that the set of such cells used in a multijunction device may be specifically selected to maximize the performance for different illumination conditions including AM0 (Space) without any significant change to the manufacturing approach or processing. It is further conceived that a single manufacturing line could be used for a family of products.
  • FIG. 2 shows an exemplary embodiment of this invention, in which three different junction layers 111 , 112 and 113 are utilized.
  • Maximum sunlight power conversion efficiency of this architecture is about 56% for highly concentrated sunbeam and about 50% for regular sunlight intensity (so called condition AM1.5).
  • All three layers contain active polycrystalline semiconductor materials based, for example, on a CIGS (Copper Indium Gallium Selenide) material system or a related alloy, and the corresponding junctions are produced using single-junction designs known in the art.
  • the bandgaps in layer 111 may be adjusted to about 1.7 eV, in layer 112 —to about 1.4 eV and in layer 113 —to about 1.1 eV.
  • each layer may be in the range of 1 to 10 microns.
  • Each junction layer may also contain buffer layers, such as, for example, a thin CdSe layer with a thickness in the range of 10 to 1000 nm.
  • Each junction layer may be located between appropriately matched transparent conducting layers 130 .
  • the conducting layers 130 may be formed from thin layers of ITO or ZnO with a thickness in the range of 0.1 to 5 ⁇ m. Adjacent conducting layers may be separated by an electrical insulator layer 220 , which is optically transparent in the appropriate spectral range.
  • electrically insulating layers may comprise thin films of polymer coating with a thickness in the range of 0.5 to 10 microns.
  • each junction layer e.g., junction layers 111 , 112 and 113
  • its associated conducting layer from time to time may be referred to as a single module. That is, the photovoltaic device shown in FIG. 2 is formed from three such modules.
  • the various modules shown in FIG. 2 may be laminated together on a common carrier substrate 110 , such as a thin polyimide film with a thickness in the range of 25 to 500 microns.
  • the substrate may be coated with metal such as Al to reflect unabsorbed light back into the individual junction modules.
  • the junction modules may be staggered or laterally offset from one another so that each conducting layer 130 has an exposed region 230 .
  • the exposed regions 230 which may be covered with metal to provide better conductivity, serve as surfaces that can connect the modules to external electrical circuits.
  • the three modules shown in the device of FIG. 2 may have up to six electrical output connectors.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the bandgaps of junction layers 111 , 112 and 113 are 1.8 eV, 1.2 eV and 0.8 eV, respectively.
  • This bandgaps selection is close to the optimum set of three bandgaps for a multijunction photovoltaic device with optimized conversion efficiency.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the active semiconducting material used in producing one or more junction layers is other than the CIGS-based material.
  • This material may be for example CdTe.
  • this material may be a semiconducting polymer material, such as for example poly-phenylene-vinylene and its derivatives.
  • a variety of other known and previously mentioned semiconducting materials may be chosen without departing from the scope of the invention.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the substrate is transparent and is attached on the top of the first junction layer 111 .
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that said junction layers are attached to individual insulating and transparent substrates providing mechanical support such that the common substrate is not necessary.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that three of electrical output connectors may be shorted or connected to the ground without loss of device functionality.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that additional junction layers with different bandgaps may be laminated with additional individual electrical contacts.
  • the total number of junctions and bandgaps may be greater than four, and the bandgap values are chosen to maximize device conversion efficiency for a given number of junctions.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that said junction layers may be produced on separate sacrificial substrates and detached from these substrate before or during the lamination process.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that said junction layers may be bonded together to produce a single multi-layered photovoltaic film.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that said junction layers may be glued together to produce a single multi-layered photovoltaic film.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that intermediate insulating material may have a refractive index matched to the surrounding layers, in order to minimize light reflections at layer interfaces in appropriate regions of the optical spectrum.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that said conducting layers 130 may be covered with a patterned grid of highly conductive metal, such as Cu or Al, to decrease electrical resistance of the corresponding contact layers without substantial decrease in optical transmissivity of the corresponding contact layers.
  • a patterned grid of highly conductive metal such as Cu or Al
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the reflective surface of the bottom substrate may be textured so that reflected light is scattered and absorbed by junction layers more efficiently.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the bottom substrate may be textured and non-uniform so as to provide a textured and non-uniform pattern for all junction layers in order to increase light absorption by junction layers.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the bottom substrate may be transparent and its bottom surface may be reflective and textured in order to increase light scattering and absorption.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that the multi-layered multijunction film has an area larger than 400 cm 2 .
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that at least one electrical contact pair from a junction layer is connected to an individual electrical grid which improves conversion efficiency of the whole photovoltaic film.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that each electrical contact pair from corresponding junction layers is connected to an individual electrical grid which improves conversion efficiency of the whole photovoltaic film.
  • each electrical contact pair from corresponding junction layers is connected to a DC-to-DC voltage converter.
  • each electrical contact pair from corresponding junction layers is connected to a DC-to-AC voltage converter.
  • each electrical contact pair from corresponding junction layers is connected to a voltage converter.
  • Each voltage converter 301 may convert a different junction voltage to a common voltage, so that all junction layers may be connected in parallel without loss of functionality as shown in FIG. 3 thus providing only two output terminals.
  • the apparatus and method described above and shown in FIG. 2 may be modified, so that said junction layers are subdivided into different sections and electrically connected in series to provide a higher output voltage.

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
US11/714,681 2007-03-06 2007-03-06 Spectrally adaptive multijunction photovoltaic thin film device and method of producing same Abandoned US20080216885A1 (en)

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US11/714,681 US20080216885A1 (en) 2007-03-06 2007-03-06 Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
EP08726292A EP2122688A4 (fr) 2007-03-06 2008-02-29 Dispositif à film fin photovoltaïque à jonctions multiples spectralement adaptatives et procédé de fabrication de celui-ci
PCT/US2008/002724 WO2008108990A1 (fr) 2007-03-06 2008-02-29 Dispositif à film fin photovoltaïque à jonctions multiples spectralement adaptatives et procédé de fabrication de celui-ci
US13/074,390 US20110174366A1 (en) 2007-03-06 2011-03-29 Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
US14/146,207 US10043929B1 (en) 2007-03-06 2014-01-02 Spectrally adaptive multijunction photovoltaic thin film device and method of producing same

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US13/074,390 Abandoned US20110174366A1 (en) 2007-03-06 2011-03-29 Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
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US20090215215A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US20090301562A1 (en) * 2008-06-05 2009-12-10 Stion Corporation High efficiency photovoltaic cell and manufacturing method
US20100229921A1 (en) * 2009-03-16 2010-09-16 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
US20110017257A1 (en) * 2008-08-27 2011-01-27 Stion Corporation Multi-junction solar module and method for current matching between a plurality of first photovoltaic devices and second photovoltaic devices
WO2010096715A3 (fr) * 2009-02-19 2011-05-19 Suncore, Inc. Système et procédé de compensation de longueur d'onde de multiples jonctions photovoltaïques
US20110143487A1 (en) * 2008-09-30 2011-06-16 Stion Corporation Method and Structure for Thin Film Tandem Photovoltaic Cell
US20110168245A1 (en) * 2008-08-28 2011-07-14 Stion Corporation Four Terminal Multi-Junction Thin Film Photovoltaic Device and Method
US20120103387A1 (en) * 2010-10-27 2012-05-03 Solarworld Innovations Gmbh Photovoltaic component
US8187906B2 (en) 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
WO2012115602A1 (fr) * 2011-02-21 2012-08-30 Bedjukh Oleksandr Convertisseur photovoltaïque (variantes) et batterie solaire à base d'un tel convertisseur
WO2012115603A1 (fr) * 2011-02-21 2012-08-30 Bedjukh Oleksandr Convertisseur photovoltaïque multijonction et batterie solaire à base d'un tel convertisseur
WO2012074247A3 (fr) * 2010-11-30 2012-10-04 한국전자통신연구원 Procédé pour fabriquer des cellules solaires et cellules solaires fabriquées par celui-ci
US20120298190A1 (en) * 2011-05-28 2012-11-29 Banpil Photonics, Inc. Perpetual energy harvester and method of fabrication
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US20130043733A1 (en) * 2008-10-07 2013-02-21 Sergey Frolov Apparatus and method for producing ac power
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