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TWI367396B - - Google Patents

Info

Publication number
TWI367396B
TWI367396B TW096134999A TW96134999A TWI367396B TW I367396 B TWI367396 B TW I367396B TW 096134999 A TW096134999 A TW 096134999A TW 96134999 A TW96134999 A TW 96134999A TW I367396 B TWI367396 B TW I367396B
Authority
TW
Taiwan
Application number
TW096134999A
Other languages
Chinese (zh)
Other versions
TW200836014A (en
Inventor
Toshikazu Takayama
Keita Ishiduka
Satoshi Maemori
Shigeru Yokoi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200836014A publication Critical patent/TW200836014A/zh
Application granted granted Critical
Publication of TWI367396B publication Critical patent/TWI367396B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
TW96134999A 2006-09-20 2007-09-19 Composition for formation of resist protection film, and method for formation of resist pattern using the same TW200836014A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006254465 2006-09-20

Publications (2)

Publication Number Publication Date
TW200836014A TW200836014A (en) 2008-09-01
TWI367396B true TWI367396B (ja) 2012-07-01

Family

ID=39200466

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96134999A TW200836014A (en) 2006-09-20 2007-09-19 Composition for formation of resist protection film, and method for formation of resist pattern using the same

Country Status (3)

Country Link
JP (1) JP4918095B2 (ja)
TW (1) TW200836014A (ja)
WO (1) WO2008035640A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1770442B1 (en) * 2005-10-03 2014-06-04 Rohm and Haas Electronic Materials, L.L.C. Compositions and processes for photolithography
JP4844756B2 (ja) * 2006-12-19 2011-12-28 信越化学工業株式会社 パターン形成方法
JP4822028B2 (ja) * 2008-12-02 2011-11-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR101813298B1 (ko) 2010-02-24 2017-12-28 바스프 에스이 잠재성 산 및 그의 용도

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4484603B2 (ja) * 2004-03-31 2010-06-16 セントラル硝子株式会社 トップコート組成物
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4551704B2 (ja) * 2004-07-08 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP2006030477A (ja) * 2004-07-14 2006-02-02 Fuji Photo Film Co Ltd 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
KR101108754B1 (ko) * 2004-09-30 2012-03-14 제이에스알 가부시끼가이샤 공중합체 및 상층막 형성 조성물
JP2006243309A (ja) * 2005-03-03 2006-09-14 Jsr Corp 液浸上層膜用重合体および液浸上層膜用樹脂組成物
US8076053B2 (en) * 2005-10-27 2011-12-13 Jsr Corporation Upper layer-forming composition and photoresist patterning method
JP5055743B2 (ja) * 2005-11-04 2012-10-24 セントラル硝子株式会社 含フッ素高分子コーティング用組成物、該コーティング用組成物を用いた含フッ素高分子膜の形成方法、ならびにフォトレジストまたはリソグラフィーパターンの形成方法。
JP4771083B2 (ja) * 2005-11-29 2011-09-14 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4553146B2 (ja) * 2006-01-31 2010-09-29 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4861237B2 (ja) * 2006-05-26 2012-01-25 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4763511B2 (ja) * 2006-05-26 2011-08-31 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4848888B2 (ja) * 2006-08-21 2011-12-28 Jsr株式会社 上層膜形成組成物、及びフォトレジストパターン形成方法
JP4615497B2 (ja) * 2006-09-20 2011-01-19 東京応化工業株式会社 レジスト保護膜形成用組成物及びこれを用いたレジストパターンの形成方法

Also Published As

Publication number Publication date
TW200836014A (en) 2008-09-01
JPWO2008035640A1 (ja) 2010-01-28
WO2008035640A1 (fr) 2008-03-27
JP4918095B2 (ja) 2012-04-18

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