TW201816841A - Substrate processing device and substrate processing method - Google Patents

Abstract

A substrate processing device comprises: a rotating unit which rotates a substrate being held on a substrate holding unit accommodated in a chamber about a vertical rotating axis; a nozzle which includes an ejection opening and which ejects, toward a main surface of the substrate being held on the rotating unit, a liquid via the ejection opening; a first chemical liquid supply unit for supplying a first chemical liquid to the nozzle; a processing cup which includes a plurality of tubular guards including a tubular first guard surrounding the substrate holding unit, and a tubular second guard surrounding the first guard, and which accommodates the substrate holding unit; a raising/lowering unit for raising/lowering at least one guard among the plurality of guards; and a control device which controls the rotating unit, the first chemical liquid supply unit, and the raising/lowering unit. The control device executes: an upper position arranging step of arranging at least one guard among the plurality of guards at an upper position which is a predetermined upper position that is set above a predetermined liquid reception position at which the first chemical liquid flying off the substrate being rotated by the rotating unit can be received by the guard, the upper position enabling the liquid flying off the substrate to be received by the guard; and a first chemical liquid supplying step of supplying the first chemical liquid to the main surface of the substrate while the substrate is being rotated by the rotating unit, with the guard arranged at the upper position.

Description

   Substrate processing device and substrate processing method   

The present invention relates to a substrate processing method for a substrate processing apparatus for processing a substrate using a chemical solution. Examples of the substrate include semiconductor substrates, substrates for liquid crystal display devices, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, A substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.

In the manufacturing process of a semiconductor device liquid crystal display device, in order to apply a chemical solution to the surface of a substrate such as a semiconductor substrate, a blade type substrate processing device for processing the substrate one by one may be used. The chamber of the blade-type substrate processing apparatus includes, for example, a spin chuck that holds the substrate substantially horizontally and rotates the substrate, and a nozzle that supplies medicine to the substrate rotated by the spin chuck. A processing cup for receiving a processing liquid scattered from the substrate and draining the processing liquid; and a disc-shaped barrier plate connected to the surface of the substrate held by a rotation jig (top) Surface) facing configuration.

The processing cover is, for example, formed into a substantially cylindrical shape with the rotation axis of the substrate caused by the rotation jig as the center axis, and an opening (upper opening) is provided at the upper end. The processing cover is provided with a cup portion to be fixedly accommodated, and a guard provided to be able to move up and down with respect to the cover portion and to receive a chemical solution scattered from a substrate rotated by a rotation jig. . In a common example, at the time of liquid processing of the substrate, the height position of at least the outermost protective cover is set to a predetermined liquid contact position, and the liquid contact position can catch the chemical liquid scattered from the substrate through the protective cover. .

In this state, while the substrate is rotated by the rotation jig, the chemical solution is supplied from the nozzle to the surface of the substrate, thereby applying the chemical solution to the surface of the substrate. The chemical solution supplied to the surface of the substrate is subjected to centrifugal force caused by the rotation of the substrate, and is scattered from the peripheral portion of the substrate to the side. The medicinal solution scattered to the side is caught by the protective cover, and is supplied to the cover part along the inner wall of the protective cover, and is then drained.

[Prior technical literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Laid-Open No. 9-97757.

However, in order to achieve the purpose of catching the chemical liquid scattered from the substrate, the height of the liquid contact position of the protective cover is a sufficient height, but in the case of a lower height position, even if the inside of the processing cover is provided by the exhaust mechanism The exhaust gas may cause the atmosphere including the mist of the chemical solution in the interior of the processing cover to flow out of the processing cover through the upper opening of the processing cover and diffuse into the interior of the chamber. Since the atmosphere including the mist and the like containing the chemical liquid becomes particles and becomes a cause of adhering to the substrate and contaminating the substrate and the inner wall of the contamination chamber, it is desirable to suppress or prevent such an atmosphere from spreading to the surroundings.

Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing diffusion of an atmosphere containing a chemical solution supplied to a main surface of a substrate to the surroundings.

The present invention provides a substrate processing apparatus including: a chamber; a substrate holding unit housed in the chamber to hold the substrate in a horizontal posture; and a rotating unit that surrounds the substrate held by the substrate holding unit. The vertical axis of rotation rotates; the nozzle has a discharge port for discharging liquid from the discharge port toward the main surface of the substrate held by the rotation unit; and a first chemical liquid supply unit for supplying the first medicine to the nozzle A processing cover for receiving the substrate holding unit and having a plurality of cylindrical protective covers, the plurality of cylindrical protective covers including a first protective cover in a cylindrical shape surrounding the periphery of the substrate holding unit; A cylindrical second protective cover surrounding the first protective cover; a lifting unit for lifting and lowering at least one protective cover of the plurality of protective covers; and a control device for controlling the rotating unit and the first The medicinal solution supply unit and the lifting unit; the control device executes: an upper position configuration step, which involves disposing the plurality of protective covers At least one protective cover is disposed at a predetermined upper position above the predetermined liquid-contacting position and the liquid-scattering liquid scattered from the substrate can be received by the protective cover. The position is such that the first chemical liquid scattered from the substrate rotated by the rotating unit can be received by the protective cover; and the first chemical liquid supplying step is in a state where the protective cover is disposed in the upper position while The rotation unit supplies the first chemical solution to the main surface of the substrate while rotating the substrate.

According to this configuration, the first chemical solution is supplied to the main surface of the substrate in a rotating state with at least one of the plurality of protective covers arranged in an upper position set above the liquid-contacting position. In a state where at least one of the plurality of protective covers is arranged in the upper position, the distance between the upper opening of the processing cover and the substrate is greatly ensured. In the first chemical liquid supply step, the chemical liquid mist is generated by supplying the first chemical liquid to the substrate. However, since the distance between the upper opening of the processing cover and the substrate is greatly ensured, the chemical liquid mist is included. The atmosphere cannot easily flow out of the processing cover through the upper opening of the processing cover. Accordingly, it is possible to provide a substrate processing apparatus capable of suppressing diffusion of the atmosphere containing the first chemical solution supplied to the main surface of the substrate to the surroundings.

In one embodiment of the present invention, it further includes an opposing member disposed above the protective cover, and between the protective cover and the upper end of the protective cover in a state where the protective cover is disposed in the upper position. An annular gap is formed and a substrate facing surface is provided, and the substrate facing surface is opposed to the upper surface of the substrate held by the substrate holding unit above.

According to this configuration, in order to allow the atmosphere inside the processing cover to flow out into the chamber, the atmosphere inside the processing cover must not only flow out through the upper opening to the outside of the processing cover, but also need to pass through the upper end of the protective cover disposed in the upper position and The annular gap between the opposing surfaces of the substrate reaches the inside of the chamber. In this case, the upper position of the protective cover is set in such a manner that the annular gap is narrowed, thereby effectively suppressing or preventing the amount of the atmosphere from flowing out to the inside of the chamber through the annular gap.

The substrate processing apparatus may further include a nozzle arm configured to hold the nozzle and to move the nozzle along a main surface of the substrate held by the substrate holding unit so as to be swingably provided around a predetermined swing axis. The predetermined shaking axis is set outside the rotation range of the substrate. In this case, the annular gap may be set to be larger than the vertical width of the nozzle arm so that the nozzle arm can span the inside and outside of the rotation range.

According to this configuration, by setting the annular gap to such a size, the nozzle arm can span the inside and outside of the rotation range while passing through the annular gap. Furthermore, the annular gap can be made as small as possible, so that the annular gap can be set to a minimum size within a range that allows the nozzle arm to pass. In this case, the amount of the atmosphere flowing out from the inside of the processing cover to the inside of the chamber can be effectively reduced. Thereby, the diffusion of the atmosphere containing the first medicinal solution to the surroundings can be more effectively suppressed.

The substrate processing apparatus may further include a nozzle arm that holds the nozzle and is rotatably provided around a predetermined shaking axis so as to move the nozzle along a main surface of the substrate held by the substrate holding unit. The predetermined shaking axis is set to the side of the substrate holding unit. In this case, the first space between the upper end of the protective cover and the lower end of the nozzle arm may be a state where the upper position is disposed in the upper position. The second interval is still narrow.

According to this configuration, by setting the magnitude relationship between the first interval and the second interval in this way, the amount of the atmosphere flowing out from the processing cover to the inside of the chamber can be effectively reduced. Thereby, the diffusion of the atmosphere containing the first medicinal solution to the surroundings can be more effectively suppressed.

The upper position may be a position where the upper end of the shield is disposed above the intermediate position between the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit.

According to this configuration, by setting the upper position to the position described above, the amount of the atmosphere flowing from the processing cover to the inside of the chamber can be effectively reduced. Thereby, the diffusion of the atmosphere containing the first medicinal solution to the surroundings can be more effectively suppressed.

The substrate processing apparatus may further include a second chemical liquid supply unit configured to supply a second chemical liquid of a different type from the first chemical liquid to the main surface of the substrate. In this case, the control device may further control the second chemical liquid supply unit; the control device may further perform: disposing the first protective cover at an upper end of the first protective cover than by the substrate holding unit And a step of disposing the second protective cover at the liquid-receiving position, and a second medicinal solution supplying step, in which the first protective cover is disposed at the lower position and the second protective cover is disposed. In a state of being disposed at the liquid-receiving position, the second chemical solution is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit.

According to this configuration, the second chemical liquid supply step is performed in a state where the first protective cover is disposed at the lower position and the second protective cover is disposed at the liquid-receiving position. Therefore, in the second chemical liquid supply step, the second chemical liquid scattered from the substrate can be well received by the second protective cover located at the liquid-contacting position.

The control device may also perform the step of disposing the first protective cover and the second protective cover in the upper position as the upper position disposing step.

According to this configuration, the first chemical liquid supply step is performed in a state where the first protective cover and the second protective cover are disposed at the upper positions. Therefore, in the first chemical liquid supply step, the first protective cover can be arranged as far as possible, and the first chemical liquid scattered from the substrate can be well received by the first protective cover. Thereby, in the first medicinal solution supplying step, the atmosphere containing the first medicinal solution can be more effectively suppressed from spreading to the surroundings.

The substrate processing apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. The aforementioned control device may further perform the steps of disposing the first protective cover and the second protective cover at the liquid-contacting position; and the water supply step, which is disposed at the first protective cover and the second protective cover at the foregoing In the state of the liquid contact position, water is supplied to the main surface of the substrate while the substrate is rotated by the rotation unit.

According to this configuration, the water supply step is performed in a state where the first protective cover and the second protective cover are arranged at the liquid contact position. Therefore, in the water supply step, it is possible to satisfactorily catch the water scattered from the substrate with the first protective cover located at the liquid contact position.

In the water supply step, since there is almost no mist of the chemical liquid around the main surface of the substrate, even if the first protective cover is located at the liquid-contacting position, the mist of the chemical liquid hardly flows out of the processing cover to the inside of the chamber.

The control device may also perform the step of disposing the first protective cover at the liquid-contacting position and the second protective cover at the upper position as the upper position disposing step.

According to this configuration, the first chemical liquid supply step is performed in a state where the first protective cover is disposed at the liquid-receiving position and the second protective cover is disposed at the upper position. The second protective cover located at the upper position is arranged as much as possible above, so that the mist flow of the first chemical liquid can be prevented from flowing out of the processing cover. Therefore, in the first chemical liquid supply step, the first chemical liquid scattered from the substrate can be caught by the first protective cover located at the liquid contact position, and the atmosphere containing the mist containing the first chemical liquid can be prevented from flowing out of the processing cover. . Thereby, in the first medicinal solution supplying step, the atmosphere containing the first medicinal solution can be more effectively suppressed from spreading to the surroundings.

The substrate processing apparatus may further include a water supply unit for supplying water to the nozzle. The control device may further control the water supply unit. The control device may further perform: disposing the first protective cover at an upper end of the first protective cover at a position lower than a substrate held by the substrate holding unit, and disposing the second protective cover at the liquid contact. A position step; and a water supply step, in a state in which the first protective cover is disposed in the lower position and the second protective cover is disposed in the liquid contact position, the substrate is rotated by the rotating unit while the substrate is rotated. The main surface of the substrate is supplied with water.

According to this configuration, the water supply step is performed in a state where the first protective cover is disposed at the lower position and the second protective cover is disposed at the liquid-receiving position. Therefore, in the water supply step, it is possible to satisfactorily catch the water scattered from the substrate with the second protective cover located at the liquid contact position. In addition, in the first medicinal solution supplying step, since the first protective cover is disposed at the liquid contact position and the second protective cover is disposed at the upper position, there is a mist of the first medicinal solution after the first medicinal solution supplying step. It is possible to attach to the wall of the partitioned internal space between the first protective cover and the second protective cover. However, in the water supply step, it is possible to supply to the internal space partitioned between the first shield and the second shield. Therefore, even in a case where the mist of the first chemical liquid is attached to the wall of the internal space partitioned between the first protective cover and the second protective cover, the aforementioned first first can be flushed with water by performing the water supply step. Fog of liquid medicine.

The control device may also execute the water supply step before and / or after the execution of the first chemical liquid supply step and / or before and / or after the execution of the second chemical liquid supply step.

According to this configuration, the first chemical liquid supply step and the second chemical liquid supply step using different types of chemical liquids are executed in a common chamber. In addition, the water supply step is performed before and / or after execution of the first chemical liquid supply step and / or before and / or after execution of the second chemical liquid supply step.

After the first medicinal solution supplying step is completed and / or before the second medicinal solution supplying step is started, a mist of the first medicinal solution is attached to the wall of the internal space partitioned between the first protective cover and the second protective cover. Yu. In this case, the water supply step is performed after the end of the first chemical liquid supply step and / or before the start of the second chemical liquid supply step, whereby water can be supplied to the internal space, and the wall attached to the internal space can be flushed. The mist of the first liquid medicine. Therefore, the mist of the first chemical solution does not remain on the wall of the internal space at the start of the second chemical solution supplying step. Therefore, even if the second chemical liquid enters the internal space in the second chemical liquid supply step, the second chemical liquid will not be mixed with the first chemical liquid in contact with it. Thereby, it is possible to prevent the first chemical liquid and the second chemical liquid from coming into contact with each other in the interior of the internal space.

The substrate processing apparatus may further include a partition plate that vertically divides a lateral region of the substrate holding unit into an upper space on the upper side and a lower space on the lower side in the chamber. In this case, an exhaust port may be opened in the lower space, and a gap may be formed between the second protective cover and the partition plate. The second protective cover may further include an occlusion portion for occluding the gap. Furthermore, the gap may be closed by the blocking portion in a state where the second protective cover is disposed at the upper position, and the second protective cover may be disposed at a predetermined lower position set below the upper position. The aforementioned gap is formed in a state of.

According to this configuration, when the gap is opened, the airflow flowing inside the chamber flows to both the inside of the processing cover and the lower space. On the other hand, when the gap is closed, the airflow flowing inside the chamber does not flow to the lower space, but gathers inside the processing cover.

In the case where the first chemical liquid supply step is performed with the second protective cover in the upper position, an air flow can be formed from the inside of the chamber toward the inside of the processing cover in the first chemical liquid supply step. This makes it possible to more effectively suppress the atmosphere of the mist containing the chemical solution from flowing out of the processing cover into the chamber.

In addition, the first chemical solution may include a mixed solution of sulfuric acid and hydrogen peroxide water.

The invention provides a substrate processing method, which is executed in a substrate processing apparatus. The substrate processing apparatus includes: a chamber; a substrate holding unit housed in the chamber to hold the substrate in a horizontal posture; a rotating unit To rotate the substrate held by the substrate holding unit around a vertical axis of rotation; and a plurality of protective covers including a cylindrical first protective cover surrounding the periphery of the substrate holding unit and surrounding the first protective cover A second cylindrical protective cover around the substrate; the substrate processing method includes: a substrate holding step for holding the substrate by the substrate holding unit; and an upper position disposing step for protecting at least one of the plurality of protective covers. The cover is arranged at an upper position, which is set to a predetermined upper position which is higher than a predetermined liquid contact position and can receive the liquid scattered from the substrate through the protective cover. The predetermined liquid contact position can be borrowed. A liquid that is scattered from a substrate rotated by the rotating unit is received by the protective cover; and a first chemical liquid supplying step, The first chemical solution is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit in a state where the protective cover is disposed at the upper position.

According to this method, the substrate is rotated and the first chemical solution is supplied to the main surface of the substrate in a state where at least one of the plurality of protective covers is disposed at an upper position above the liquid contact position. In a state where at least one of the plurality of protective covers is arranged in the upper position, the distance between the upper opening of the processing cover and the substrate is greatly ensured. In the first chemical liquid supply step, the chemical liquid mist is generated by supplying the first chemical liquid to the substrate. However, since the distance between the upper opening of the processing cover and the substrate is greatly ensured, the chemical liquid mist is included. The atmosphere cannot easily flow out of the processing cover through the upper opening of the processing cover. Thereby, it is possible to provide a substrate processing method capable of suppressing diffusion of the atmosphere containing the first chemical solution supplied to the main surface of the substrate to the surroundings.

In one embodiment of the present invention, the substrate processing method further includes: disposing the first protective cover at an upper end of the first protective cover at a position lower than a substrate held by the substrate holding unit, and The step of disposing the second protective cover at the liquid contact position; and the step of supplying the second chemical liquid in a state where the first protective cover is disposed at the lower position and the second protective cover is disposed at the liquid contact position A second chemical solution is supplied to the main surface of the substrate while the substrate is rotated by the rotation unit.

According to this method, the second medicinal solution supply step is performed in a state where the first protective cover is arranged in the lower position and the second protective cover is arranged in the liquid-contacting position. Therefore, in the second chemical liquid supply step, the second chemical liquid scattered from the substrate can be well received by the second protective cover located at the liquid-contacting position.

The step of disposing the upper position may also include a step of disposing the first protective cover and the second protective cover in the upper position.

According to this method, the first chemical liquid supply step is performed in a state where the first protective cover and the second protective cover are arranged at the upper positions. Therefore, in the first chemical liquid supply step, the first protective cover can be arranged as far as possible, and the first chemical liquid scattered from the substrate can be well received by the first protective cover. Thereby, in the first medicinal solution supplying step, the atmosphere containing the first medicinal solution can be more effectively suppressed from spreading to the surroundings.

The substrate processing method may further include: a step of disposing the first protective cover and the second protective cover at the liquid-contacting position; and a water supply step, which is arranged in the first protective cover and the second protective cover. In the state of the liquid contact position, water is supplied to the main surface of the substrate while the substrate is rotated by the rotation unit.

According to this method, the water supply step is performed in a state where the first protective cover and the second protective cover are arranged at the liquid-contacting position. Therefore, in the water supply step, it is possible to satisfactorily catch the water scattered from the substrate with the first protective cover located at the liquid contact position.

In the water supply step, since there is almost no mist of the chemical liquid around the main surface of the substrate, even if the first protective cover is located at the liquid-contacting position, the mist of the chemical liquid hardly flows out of the processing cover to the inside of the chamber.

The step of disposing the upper position may further include a step of disposing the first protective cover at the liquid contact position and disposing the second protective cover at the upper position.

According to this method, the first medicinal solution supply step is performed in a state where the first protective cover is disposed at the liquid-receiving position and the second protective cover is disposed at the upper position. The second protective cover located at the upper position is arranged as much as possible above, so that the mist flow of the first chemical liquid can be prevented from flowing out of the processing cover. Therefore, in the first chemical liquid supply step, the first chemical liquid scattered from the substrate can be caught by the first protective cover located at the liquid contact position, and the atmosphere containing the mist containing the first chemical liquid can be prevented from flowing out of the processing cover. . Thereby, in the first medicinal solution supplying step, the atmosphere containing the first medicinal solution can be more effectively suppressed from spreading to the surroundings.

The substrate processing method may further include: a step of disposing the first protective cover and the second protective cover at the liquid contact position; and disposing the first protective cover at an upper end of the first protective cover at a position higher than that of the first protective cover. A step in which the substrate held by the substrate holding unit is in a lower and lower position and the second protective cover is disposed at the liquid contact position; and a water supply step is performed when the first protective cover is disposed in the lower position and the second protective cover is disposed In a state of being disposed at the liquid contact position, water is supplied to the main surface of the substrate while the substrate is rotated by the rotation unit.

According to this method, the water supply step is performed in a state where the first protective cover is disposed at the lower position and the second protective cover is disposed at the liquid-contacting position. Therefore, in the water supply step, it is possible to satisfactorily catch the water scattered from the substrate with the second protective cover located at the liquid contact position. In addition, in the first medicinal solution supplying step, since the first protective cover is disposed at the liquid contact position and the second protective cover is disposed at the upper position, there is a mist of the first medicinal solution after the first medicinal solution supplying step. It is possible to attach to the wall of the partitioned internal space between the first protective cover and the second protective cover. However, in the water supply step, it can be supplied to the internal space partitioned between the first shield and the second shield. Therefore, even in a case where the mist of the first chemical liquid is attached to the wall of the internal space partitioned between the first protective cover and the second protective cover, the aforementioned first first can be flushed with water by performing the water supply step. Fog of liquid medicine.

The water supply step may also be performed before and / or after the execution of the first chemical liquid supply step and / or before and / or after the execution of the second chemical liquid supply step.

According to this method, the first chemical liquid supply step and the second chemical liquid supply step using different types of chemical liquids are performed in a common chamber. In addition, the water supply step is performed before and / or after execution of the first chemical liquid supply step and / or before and / or after execution of the second chemical liquid supply step.

After the first medicinal solution supplying step is completed and / or before the second medicinal solution supplying step is started, a mist of the first medicinal solution is attached to the wall of the internal space partitioned between the first protective cover and the second protective cover. Yu. In this case, the water supply step is performed after the end of the first chemical liquid supply step and / or before the start of the second chemical liquid supply step, whereby water can be supplied to the internal space, and the wall attached to the internal space can be flushed. The mist of the first liquid medicine. Therefore, the mist of the first chemical solution does not remain on the wall of the internal space at the start of the second chemical solution supplying step. Therefore, even if the second chemical liquid enters the internal space in the second chemical liquid supply step, the second chemical liquid will not be mixed with the first chemical liquid in contact with it. Thereby, it is possible to prevent the first chemical liquid and the second chemical liquid from coming into contact with each other in the interior of the internal space.

The foregoing objects, features, and effects of the present invention and other objects, features, and effects are made clearer with reference to the accompanying drawings and the following description of embodiments.

1‧‧‧ substrate processing device

2‧‧‧ processing unit

3‧‧‧control device

4‧‧‧ chamber

4a‧‧‧lower space

5‧‧‧rotation fixture

6‧‧‧ Opposite side of substrate

7‧‧‧ Opposing member

8‧‧‧SPM supply unit

9‧‧‧ exhaust port

9a‧‧‧Exhaust duct

10‧‧‧Organic solvent supply unit

11‧‧‧Water supply unit

12‧‧‧ treatment cover

12a‧‧‧ Upper opening

13‧‧‧ next door

14‧‧‧FFU

15‧‧‧side area

15a‧‧‧upper area

15b‧‧‧lower area

16‧‧‧ divider

17‧‧‧ rotation motor

18‧‧‧ lower rotation axis

19‧‧‧rotation base

19a‧‧‧upper surface

20‧‧‧ clamping member

21‧‧‧Barrier

22‧‧‧up rotation axis

23‧‧‧through hole

24‧‧‧first nozzle

25‧‧‧Second Nozzle

26‧‧‧Baffle rotating unit

27‧‧‧Baffle lift unit

28‧‧‧SPM nozzle

28a‧‧‧jet outlet

29‧‧‧ Nozzle Arm

29a‧‧‧ bottom face

30‧‧‧SPM piping

31‧‧‧SPM valve

32‧‧‧ Nozzle moving unit

33‧‧‧ central axis nozzle

34‧‧‧shell

34a‧‧‧jet outlet

35‧‧‧First spray outlet

36‧‧‧ground second spray outlet

37‧‧‧Organic solvent piping

38‧‧‧The first organic solvent valve

38a‧‧‧ bottom face

39‧‧‧Second Organic Solvent Valve

40‧‧‧ divergence

41‧‧‧ suction pipe

42‧‧‧ Suction Valve

43‧‧‧ Downstream side of organic solvent

44‧‧‧ Attraction unit

46‧‧‧Water piping

47‧‧‧Water valve

48‧‧‧Inert gas piping

49‧‧‧Inert gas valve

50‧‧‧ cylindrical member

51‧‧‧First cover

52‧‧‧Second hood

53‧‧‧First protective cover

54‧‧‧Second protective cover

55‧‧‧Protective cover lifting unit

59‧‧‧The first liquid tank

61‧‧‧First liquid piping

62‧‧‧Second Row Liquid Tank

64‧‧‧Second discharge pipe

66‧‧‧Guide

67‧‧‧ treatment liquid separation wall

68‧‧‧ lower end

69‧‧‧Thick-walled

70‧‧‧ middle section

71‧‧‧ Upper Section

72‧‧‧ cylinder

73‧‧‧ upper end

74‧‧‧Return Department

75‧‧‧ protrusion

86‧‧‧ annular gap

87‧‧‧ the first interval

88‧‧‧Second interval

102‧‧‧Water branch piping

103‧‧‧IPA branch piping

105‧‧‧Water on-off valve

106‧‧‧IPA on-off valve

A1, A2‧‧‧‧Axis of rotation

A3‧‧‧ Shake axis

C‧‧‧Carrier

CR‧‧‧ substrate handling robot

DF1, DF2, DF3‧‧‧ Downstream

H‧‧‧hand

IR‧‧‧handling robot

LP‧‧‧ Loading port

M‧‧‧ middle position

MI‧‧‧Mist

P1‧‧‧up position

P2‧‧‧ Wetted position

P3‧‧‧ down position

S, S0‧‧‧ clearance

S1, S2‧‧‧‧ steps

S3‧‧‧SPM supply steps

S4‧‧‧Water supply steps

S5‧‧‧Organic solvent supply steps

S6‧‧‧centrifugation dehydration step

W‧‧‧ substrate

W1‧‧‧Up and down width

FIG. 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus according to an embodiment of the present invention.

2A is a schematic cross-sectional view illustrating a configuration example of a processing unit provided in the substrate processing apparatus.

FIG. 2B is a diagram for specifically explaining the configuration of the periphery of the facing member included in the processing unit.

FIG. 3A is a schematic diagram for explaining a flow of an air flow inside the chamber in a state where the second protective cover shown in FIG. 2A is in a lower position. FIG.

FIG. 3B is a schematic diagram for explaining a flow of an air flow inside the chamber in a state where the second protective cover is located at the liquid contact position.

FIG. 3C is a schematic diagram for explaining a flow of an air flow inside the chamber in a state where the second protective cover is in an upper position.

FIG. 4 is a block diagram illustrating the electrical configuration of the main part of the substrate processing apparatus.

Fig. 5 is a flowchart illustrating a first substrate processing example for the aforementioned processing unit.

6A and 6B are schematic diagrams for explaining the aforementioned first substrate processing example.

FIG. 6C and FIG. 6D are schematic diagrams for describing steps subsequent to FIG. 6B.

FIG. 6E is a schematic diagram for explaining a step following FIG. 6D.

FIG. 7 is a schematic cross-sectional view illustrating a configuration example of a lower portion of the processing unit in an enlarged manner.

8A and 8B are schematic diagrams for explaining a second substrate processing example for the foregoing processing unit.

FIG. 8C is a schematic diagram for explaining a second substrate processing example for the foregoing processing unit.

FIG. 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing a substrate W such as a silicon wafer one by one. In this embodiment, the substrate W is a disc-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing a substrate W with a processing liquid; and a load port LP for carrying a carrier C, which is used for housing The plurality of substrates W processed by the processing unit 2; the transfer robot IR and the transfer robot CR transfer the substrate W between the loading port LP and the processing unit 2; and the control device 3 controls the substrate processing device 1. The transfer robot IR transfers the substrate W between the carrier C and the substrate transfer robot CR. The substrate transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example.

FIG. 2A is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.

The processing unit 2 includes: a box-shaped chamber 4; and a rotation fixture (substrate holding unit) 5 which holds a substrate W in a horizontal posture in the chamber 4 so that the substrate W is vertically passed through the center of the substrate W The rotation axis A1 rotates; the facing member 7 has a substrate facing surface 6 facing the upper surface (main surface) of the substrate W held by the rotation jig 5; SPM (sulfuric acid / hydrogen peroxide mixture; Hydrogen-water mixed liquid) supply unit (first chemical liquid supply unit) 8 for supplying a sulfuric acid hydrogen peroxide aqueous mixed liquid (SPM) as the first chemical liquid to the substrate W held by the rotation jig 5; organic solvent The supply unit (second chemical liquid supply unit) 10 is an example of supplying an organic solvent (organic solvent with low surface tension) as a second chemical liquid to the surface (upper surface) of the substrate W held by the rotation jig 5. Isopropyl alcohol (IPA) liquid; a water supply unit 11 for supplying water as a cleaning liquid to the surface (upper surface) of the substrate W held by the rotation jig 5; and a cylindrical processing cover 12 , Department around the rotation fixture 5.

The chamber 4 includes: a box-shaped partition wall 13 for containing the rotation jig 5 or a nozzle; and an FFU (fan filter unit) 14 as a fan unit for conveying and cleaning the inside of the partition wall 13 from the upper part Air (air filtered by the filter); and a partition plate 16 that partitions the lateral region 15 of the processing cover 12 in the chamber 4 up and down into an upper region 15 a and a lower region 15 b in the interior of the chamber 4.

The FFU 14 is arranged above the partition wall 13 and is mounted on the top of the partition wall 13. The control device 3 controls the FFU 14 such that the FFU 14 sends clean air from the top of the partition wall 13 downward into the chamber 4.

An exhaust port 9 is opened at the lower or bottom of the partition wall 13. An exhaust duct 9 a is connected to the exhaust port 9. The exhaust device sucks the atmosphere of the lower space 4a (the space in the inner space of the chamber 4 below the partition plate 16 in the vertical direction), and exhausts the lower space 4a.

The FFU 14 supplies clean air to the inside of the chamber 4 and the exhaust device exhausts the lower space 4 a of the chamber 4, thereby forming a down flow (downflow) in the chamber 4. The processing of the substrate W is performed in a state where a downflow is formed in the chamber 4.

The partition wall 16 is disposed between the outer wall of the processing cover 12 and the partition wall 13 (lateral partition wall) of the chamber 4. The inner end portion of the partition plate 16 is arranged along the outer peripheral surface of the outer wall of the processing cover 12. The outer end portion of the partition plate 16 is arranged along the inner surface of the partition wall 13 (lateral partition wall) of the chamber 4. The SPM nozzle 28 and the nozzle arm 29 described later are arranged above the partition plate 16. The partition 16 may be a single board or a plurality of boards arranged at the same height. The upper surface of the partition plate 16 may be horizontal or may extend obliquely upward toward the rotation axis A1.

As the rotation jig 5, a clamp-type jig for sandwiching the substrate W in a horizontal direction and horizontally holding the substrate W is used. Specifically, the rotation fixture 5 includes: a spin motor (rotation unit) 17; a lower rotation shaft 18 integrated with a driving shaft of the rotation motor 17; and a disc-shaped spin base ) 19, which is installed on the upper end of the lower rotation shaft 18 slightly horizontally. The rotation base 19 is provided with the upper surface 19a which consists of a flat surface.

A plurality of (three or more, for example, six) clamping members 20 are arranged on a peripheral edge portion of the upper surface 19 a of the rotation base 19. The plurality of clamping members 20 are arranged at appropriate intervals on the circumference corresponding to the outer peripheral shape of the substrate W in the upper peripheral portion of the rotation base 19.

In addition, the rotation jig 5 is not limited to a clamping type rotation jig. For example, a vacuum suction type rotation jig (vacuum jig) may be used. The vacuum suction type rotation jig is a vacuum suction of the back surface of the substrate W. The substrate W is held in a horizontal posture, and in this state, the substrate W is rotated about a vertical rotation axis, and the substrate W held by the rotation jig 5 is rotated.

The opposing member 7 includes: a barrier plate 21; and an upper rotation shaft 22, which is coaxially disposed on the barrier plate 21. The barrier plate 21 has a circular plate shape and has a diameter substantially the same as or larger than the diameter of the substrate W. The substrate-opposing surface 6 forms a lower surface of the barrier plate 21, and has a circular shape facing the entire area of the upper surface of the substrate W.

A cylindrical through hole 23 (see FIG. 2B) is formed in the central portion of the substrate facing surface 6. The through hole 23 penetrates the blocking plate 21 and the upper rotation shaft 22 vertically. The inner peripheral wall system of the through hole 23 is partitioned by a cylindrical surface. A first nozzle 24 and a second nozzle 25 extending upward and downward are respectively inserted in the through hole 23.

A barrier rotation unit 26 is coupled to the upper rotation shaft 22. The barrier rotation unit 26 rotates the upper rotation shaft 22 together with the barrier 21 around the rotation axis A2. A barrier lift unit 27 including an electric motor, a ball screw, and the like is coupled to the barrier 21. The barrier lift unit 27 vertically lifts the barrier 21 together with the first nozzle 24 and the second nozzle 25. The barrier lift unit 27 raises and lowers the barrier 21, the first nozzle 24, and the second nozzle 25 between an approach position (see FIG. 6D and the like) and a retracted position (see FIGS. 2A and 6A and the like), and the approach position is a barrier The substrate facing surface 6 of the plate 21 approaches the position of the upper surface of the substrate W held by the rotation jig 5, and the retreat position is provided above the approach position. The barrier lift unit 27 can hold the barrier 21 at various positions between the approach position and the retracted position.

The SPM supply unit 8 includes: an SPM nozzle (nozzle) 28; a nozzle arm 29 with an SPM nozzle 28 installed at the front end; an SPM pipe 30 connected to the SPM nozzle 28; an SPM valve 31 connected to the SPM pipe 30 And the nozzle moving unit 32, which is connected to the nozzle arm 29 and swings the nozzle arm 29 about the swing axis A3 to move the SPM nozzle 28. The nozzle moving unit 32 includes a motor and the like.

The SPM nozzle 28 is, for example, a straight nozzle that discharges liquid in a continuous flow state. In this embodiment, an ejection port 28a is formed on the outer peripheral surface of the body of the SPM nozzle 28, and the SPM is ejected laterally from the ejection port 28a. However, instead of this configuration, a configuration may be adopted in which a spray port is formed at the lower end of the body of the SPM nozzle 28, and the SPM is sprayed downward from the spray port 28a.

The SPM pipe 30 is supplied with a sulfuric acid hydrogen peroxide water mixed solution (SPM) from a sulfuric acid hydrogen peroxide water supply source. In this embodiment, the SPM supplied to the SPM pipe 30 is at a high temperature (for example, about 170 ° C to about 180 ° C). The SPM pipe 30 is supplied with SPM heated to the above-mentioned high temperature by the reaction heat of sulfuric acid and hydrogen peroxide water.

When the SPM valve 31 is opened, the high-temperature SPM supplied from the SPM pipe 30 to the SPM nozzle 28 is discharged from the discharge port 28a of the SPM nozzle 28. When the SPM valve 31 is closed, the ejection of the high-temperature SPM from the SPM nozzle 28 is stopped. The nozzle moving unit 32 moves the SPM nozzle 28 between a processing position where the high-temperature SPM sprayed from the SPM nozzle 28 is supplied to the upper surface of the substrate W and a retreat position when viewed from above. The SPM nozzle 28 has been retracted to a position on the side of the rotation jig 5.

FIG. 2B is a diagram for specifically explaining the configuration of the periphery of the facing member 7 included in the processing unit 2.

A central axis nozzle 33 extending vertically is inserted into the through hole 23. The central axis nozzle 33 includes a first nozzle 24, a second nozzle 25, and a cylindrical casing 34 surrounding the first nozzle 24 and the second nozzle 25.

A first ejection port 35 is formed at a lower end of the first nozzle 24 to eject the liquid downward. A second ejection port 36 is formed at the lower end of the second nozzle 25 to eject the liquid downward. In this embodiment, each of the first nozzle 24 and the second nozzle 25 is an inner tube. The casing 34 extends in the vertical direction along the rotation axis A2. The case 34 is inserted into the through hole 23 in a non-contact state. Therefore, the inner periphery of the barrier plate 21 surrounds the outer periphery of the case 34 in the radial direction with an interval therebetween.

The organic solvent supply unit 10 includes: a first nozzle 24; an organic solvent piping 37 connected to the first nozzle 24 and internally connected to the first discharge port 35; and a first organic solvent valve 38 sandwiched between the organic solvents A piping 37 is used to open and close the organic solvent; and a second organic solvent valve 39 is provided to open and close the organic solvent piping 37 provided downstream of the first organic solvent valve 38.

A suction pipe 41 is connected to the branch position 40 between the first organic solvent valve 38 and the second organic solvent valve 39 in the organic solvent piping 37, and a suction device (not shown) is connected to the front end of the suction pipe 41. ). A suction valve 42 is provided between the suction pipe 41 to open and close the suction pipe 41.

When the first organic solvent valve 38 is opened, an organic solvent from an organic solvent supply source is supplied to the second organic solvent valve 39. In this state, when the second organic solvent valve 39 is opened, the organic solvent supplied to the second organic solvent valve 39 is discharged from the first discharge port 35 toward the center portion of the upper surface of the substrate W.

In the operating state of the suction device, when the suction valve 42 is opened in a state where the first organic solvent valve 38 is closed and the second organic solvent valve 39 is opened, the operation of the suction device is activated, and the ratio in the organic solvent piping 37 diverges. The position 40 also exhausts the inside of the downstream portion 43 (hereinafter referred to as "organic solvent downstream portion 43") of the downstream side, and the organic solvent contained in the organic solvent downstream portion 43 is sucked into the suction pipe 41. The suction device and the suction valve 42 are included in the suction unit 44.

The water supply unit 11 includes: a second nozzle 25; a water pipe 46 connected to the second nozzle 25 and internally connected to the second discharge port 36; and a water valve 47 for opening and closing the water pipe 46, and The water supply from the water pipe 46 to the second nozzle 25 is switched and the water supply is stopped. When the water valve 47 is opened, the water system from the water supply source is supplied to the water pipe 46 and is ejected from the second ejection port 36 toward the center portion of the upper surface of the substrate W. The water system supplied to the water pipe 46 is, for example, carbonated water, but it is not limited to carbonated water, and may also be deionized water (DIW), electrolytic ion water, hydrogen water, ozone water, and a diluted concentration (for example, 10 ppm to About 100 ppm) in hydrochloric acid water.

The processing unit 2 further includes an inert gas pipe 48 for supplying an inert gas to a cylindrical space between the outer periphery of the casing 34 and the inner periphery of the barrier plate 21; and an inert gas valve 49 interposed between the inert gas Piping 48. When the inert gas valve 49 is opened, the inert gas system from the inert gas supply source is ejected downward from the center portion of the lower surface of the barrier plate 21 through the outer periphery of the casing 34 and the inner periphery of the barrier plate 21. Therefore, when the inert gas valve 49 is opened in a state where the barrier plate 21 is disposed at the close position, the inert gas ejected from the central portion of the lower surface of the barrier plate 21 is on the upper surface of the substrate W and faces the substrate of the barrier plate 21 The space between 6 extends outward (in a direction away from the rotation axis A1), and the air system between the substrate W and the barrier plate 21 is replaced with an inert gas. The inert gas system flowing in the inert gas pipe 48 is, for example, nitrogen. The inert gas is not limited to nitrogen, and may be other inert gas such as helium or argon.

As shown in FIG. 2A, the processing cover 12 includes: a plurality of cover portions (a first cover portion 51 and a second cover portion 52), which are fixedly arranged so as to doublely surround the rotation jig 5; and a plurality of protective covers (The first protective cover 53 and the second protective cover 54) are used to catch the processing liquid (SPM, organic solvent or water) scattered around the substrate W; and the protective cover lifting unit (elevating unit) 55 is independent Lift each protective cover to ground. The shield lifting unit 55 has a structure including a ball screw mechanism, for example.

The processing cover 12 can be accommodated in an overlapping manner in the up-down direction, and the protective cover lifting unit 55 lifts and lowers at least one of the first protective cover 53 and the second protective cover 54, thereby unfolding and folding the processing cover 12.

The first cover 51 has a circular shape and surrounds the rotation jig 5 between the rotation jig 5 and the cylindrical member 50. The first cover portion 51 has a shape that is substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W. The first cover portion 51 has a U-shaped cross section and defines a first liquid discharge tank 59. The first liquid discharge tank 59 is used to discharge the processing liquid that has been used for the substrate W. A first drain port (not shown) is opened at the lowest part of the bottom of the first drain tank 59, and a first drain pipe 61 is connected to the first drain port. The treatment liquid discharged through the first liquid discharge pipe 61 is transferred to a predetermined recovery device or a waste device, and is processed by the recovery device or a waste device. The second cover portion 52 is annular and surrounds the periphery of the first cover portion 51. The second cover portion 52 has a shape that is substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W. The second cover 52 has a U-shaped cross section and defines a second liquid discharge tank 62. The second liquid discharge tank 62 is used to collect and recover the processing liquid used for the substrate W processing. A second liquid discharge port (not shown) is opened at the lowest part of the bottom of the second liquid discharge tank 62, and a second liquid discharge pipe 64 is connected to the second liquid discharge port. The processing liquid discharged through the second liquid discharge pipe 64 is sent to a predetermined recovery device or waste device, and is processed by the recovery device or waste device.

The inner first protective cover 53 surrounds the periphery of the rotation jig 5 and has a shape that is substantially rotationally symmetric with respect to the rotation axis A1 of the substrate W for which the rotation jig 5 is. The first protective cover 53 is integrally provided with a cylindrical guide portion 66 that surrounds the periphery of the rotation jig 5 and a cylindrical processing liquid separation wall 67 that is connected to the guide portion 66. The guide portion 66 includes a cylindrical lower end portion 68 surrounding the rotation jig 5 and a cylindrical thick wall portion 69 extending outward from the upper end of the lower end portion 68 (away from the rotation axis A1 of the substrate W). Direction) extends; the cylindrical middle section 70 extends vertically upward from the outer peripheral portion of the upper surface of the thick-walled section 69; and the ring-shaped upper end section 71 extends inward from the upper end of the middle section 70 (close to the substrate W) Direction of rotation axis A1) extends obliquely upward.

The treatment liquid separation wall 67 extends slightly from the outer peripheral portion of the thick-walled portion 69 to the vertical downward direction, and is located on the second liquid discharge tank 62. In addition, the lower end portion 68 of the guide portion 66 is located on the first liquid discharge tank 59 and is housed inside the first liquid discharge tank 59 in a state closest to the first protective cover 53 and the first cover portion 51. The inner peripheral end of the upper end portion 71 of the guide portion 66 has a circular shape having a larger diameter than the substrate W held by the rotation jig 5 when viewed from above. In addition, as shown in FIG. 2A and the like, the cross-sectional shape of the upper end portion 71 of the guide portion 66 may be linear, or may be extended while drawing a smooth arc shape, for example.

The outer second protective cover 54 surrounds the periphery of the rotation jig 5 in the outer side of the first protective cover 53 and has a substantially rotationally symmetrical shape with respect to the rotation axis A1 of the substrate W for which the rotation jig 5 is formed. The second protective cover 54 includes a cylindrical portion 72 coaxially with the first protective cover 53 and an upper end portion 73 slanting upward from the upper end of the cylindrical portion 72 toward the center side (in the direction close to the rotation axis A1 of the substrate W). Extending; and a ring-shaped projection (occlusion portion) 75 protruding outward from the lower end portion of the cylindrical portion 72, for example. The inner peripheral end of the upper end portion 73 is formed in a circular shape having a larger diameter than that of the substrate W held by the rotation jig 5 in a plan view. In addition, as shown in FIG. 2A and the like, the cross-sectional shape of the upper end portion 73 may be linear, or may be extended while drawing a smooth arc, for example. The front end of the upper end portion 73 partitions the upper opening portion 12 a of the processing cover 12 (see FIG. 2A).

The cylindrical portion 72 is located on the second liquid discharge tank 62. In addition, the upper end portion 73 is provided so as to overlap the upper end portion 71 of the guide portion 66 of the first protective cover 53 in the vertical direction, and is held in a state where the first protective cover 53 and the second protective cover 54 are closest to each other. A minute gap is formed so as to approach the upper end portion 71 of the guide portion 66. The folded-back portion 74 is formed so as to overlap the upper end portion 71 of the guide portion 66 in the horizontal direction in a state where the first protective cover 53 and the second protective cover 54 are closest to each other. The projection 75 has an annular upper surface formed by a flat horizontal surface.

The shield raising / lowering unit 55 raises and lowers each shield between the upper position P1 (refer FIG. 3B etc.) mentioned below, and the lower position P3 (refer FIG. 3C etc.) of the upper end part of the shield below the board | substrate W.

The upper positions P1 of the first protective cover 53 and the second protective cover 54 are respectively set to a height position higher than the liquid contact position P2 (see FIG. 3A and the like) described below. The upper position P1 of each protective cover (the first protective cover 53 and the second protective cover 54) is an annular gap 86 (see FIG. 6B) formed between the upper end of the protective cover and the opposing member 7 (substrate opposing surface 6). ) Becomes a position (width in the vertical direction) larger than the vertical width W1 of the nozzle arm 29.

From another viewpoint, the upper position P1 of each shield is a position lower than the lower end surface 29 a of the nozzle arm 29 and higher than the ejection port 28 a. More specifically, the upper position P1 of each protective cover is the first interval 87 (see FIG. 6B) between the upper end of the protective cover and the lower end surface 29 a (lower end of the nozzle arm 29) of the nozzle arm 29 and the nozzle arm 29. The second interval 88 (see FIGS. 6A and 6B) 88 between the lower end surface 29 a of the SPM nozzle 28 and the discharge port 28 a of the SPM nozzle 28 is equal to or narrower than the second interval 88. More specifically, the upper position P1 of each protective cover is the upper end of the protective cover than the intermediate position M between the lower end surface 29a of the nozzle arm 29 and the upper surface of the substrate W held by the rotation jig 5 (see FIG. 3B). Also above the position.

The shield lifting unit 55 can hold the first shield 53 and the second shield 54 at any position between the upper position P1 and the lower position P3. Specifically, the protective cover lifting unit 55 holds the first protective cover 53 and the second protective cover 54 at the upper position P1, the lower position P3, and the wetted position P2 set between the upper position P1 and the lower position P3, respectively. The liquid-receiving position P2 of the first protective cover 53 and the second protective cover 54 is an upper end portion of the protective cover at a position higher than the substrate W. The supply of the processing liquid to the substrate W and the drying of the substrate W are performed in a state where a certain shield (the first shield 53 and the second shield 54) faces the peripheral end surface of the substrate W.

3A to 3C are schematic diagrams for explaining the height positions of the first protective cover 53 and the second protective cover 54 and the flow of the airflow inside the chamber 4. FIG. 3A shows a state where the second protective cover 54 is disposed at the liquid-receiving position P2. FIG. 3B shows a state where the second protective cover 54 is disposed at the upper position P1. FIG. 3C shows a state where the second protective cover 54 is disposed at the lower position P3.

As a method of facing the inner first protective cover 53 to the peripheral end surface of the substrate W, there are two methods described below.

As shown by a solid line in FIG. 3B, the first method is to arrange both the first protective cover 53 and the second protective cover 54 at the upper position P1. Hereinafter, the state of such a processing cover 12 is referred to as a "first upper position state". Further, in the first upper position state, the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first protective cover 53 and the second protective cover 54 overlap with a narrow interval.

As shown by the solid line in FIG. 3A, the second method is a method in which both the first protective cover 53 and the second protective cover 54 are arranged at the liquid contact position P2. Hereinafter, the state of the processing cover 12 is referred to as a "first liquid contact position state". In addition, in the state of the first liquid contact position, the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction, that is, the first protective cover 53 and the second protective cover 54 overlap with a narrow interval.

In addition, as a method of facing the outer second protective cover 54 and the peripheral end surface of the substrate W, there are two methods described below.

As shown by the two-dot chain line in FIG. 3B, the first method is a method of disposing the first protective cover 53 at the lower position P3 and the second protective cover 54 at the upper position P1. The state of such a processing cover 12 is hereinafter referred to as a "second upper position state".

As shown by the two-dot chain line in FIG. 3A, the second method is a method of disposing the first protective cover 53 at the lower position P3 and the second protective cover 54 at the liquid-contacting position P2. Hereinafter, the state of the processing cover 12 is referred to as a "second liquid-contact position state". In the state of the second liquid contact position, the interval between the first protective cover 53 and the second protective cover 54 is expanded vertically.

In addition, as shown in FIG. 3C, the processing cover 12 can also be made into all the protective covers (the first protective cover 53 and the second protective cover 54) not facing the peripheral end surface of the substrate W. In this state, the first protective cover 53 and the second protective cover 54 are both disposed at the lower position P3. The state of such a processing cover 12 is hereinafter referred to as a "closed state".

As shown in FIG. 3C, in the retracted state of the processing cover 12, there is a large gap (upper and lower directions) between the protrusion 75 (the upper surface) of the second protective cover 54 and the partition plate 16 (the lower surface). The interval is about 70mm) W2. Therefore, when the gas passes between the projection 75 and the partition plate 16, there is almost no pressure loss of the gas.

On the other hand, in this state, since the upper end of the second protective cover 54 is located below the peripheral end surface of the substrate W, the rotation jig 5 (rotation base 19) and the front end of the second protective cover 54 (folded portion 74) Since the interval between them is narrow, the pressure loss of the gas is large when the gas passes through the gap S0 between the rotation jig 5 and the front end of the second shield 54. Therefore, the downflow DF1 flowing inside the chamber 4 in the retracted state of the processing cover 12 specifically passes between the projection 75 and the partition plate 16 and enters the lower space 4 a of the chamber 4.

In addition, as shown in FIG. 3A, in the first liquid-receiving position state or the second liquid-receiving position state of the processing cover 12, the protrusion 75 (the upper surface) of the second protective cover 54 and the lower part of the partition plate 16 ( The gap S between the surfaces) is narrower than in the retracted state (the interval in the up-down direction is about 30 mm and the interval in the left-right direction is about 2 mm). Therefore, the pressure loss of the gas passing through the gap S between the protruding portion 75 and the partition plate 16 becomes larger than in the retreated state. In addition, since the upper end of the second protective cover 54 is located above the peripheral end surface of the substrate W, the gap S0 between the rotation jig 5 and the front end of the second protective cover 54 is wider than in the retracted state, so that the gas passes through the rotation jig The pressure loss between 5 and the front end of the second protective cover 54 is smaller than that in the retracted state (that is, to some extent). Therefore, the downflow DF2 inside the chamber 4 in the first wetted state or the second wetted state of the processing cover 12 passes through the gap S between the protrusion 75 and the partition plate 16 and the rotation jig 5 Both of the gaps S0 from the front end of the second protective cover 54 enter the lower space 4 a of the chamber 4.

As shown in FIG. 3B, the upper surface of the protrusion 75 of the second protective cover 54 is in contact with the lower surface of the partition plate 16 in the first upper position state or the second upper position state of the processing cover 12, whereby the protrusion 75 The gap S with the partition plate 16 is slightly zero (substantially closed, and more strictly, the interval in the up-down direction is about 3 mm and the interval in the left-right direction is about 2 mm).

On the other hand, in this state, since the upper end of the second protective cover 54 is located far above the peripheral end surface of the substrate W, the interval between the rotation jig 5 (rotation base 19) and the front end of the second protective cover 54 It is so large that almost no pressure loss of the gas is generated when the gas passes between the rotation jig 5 and the front end of the second protective cover 54. Therefore, the downflow DF3 flowing inside the chamber 4 in the first upper position state or the second upper position state of the processing cover 12 passes exclusively between the rotation jig 5 and the front end of the second protective cover 54 and enters The lower space 4a of the chamber 4.

FIG. 4 is a block diagram illustrating the electrical configuration of the main parts of the substrate processing apparatus 1.

The control device 3 is configured using, for example, a microcomputer. The control device 3 includes an arithmetic unit such as a CPU (Central Processing Unit), a memory unit such as a fixed memory device and a hard disk drive, and an input / output unit. The memory unit stores a program for the arithmetic unit to execute.

The control device 3 controls operations of the rotation motor 17, the nozzle moving unit 32, the barrier rotation unit 26, the barrier lift unit 27, and the hood lift unit 55, and the like. The control device 3 opens and closes the SPM valve 31, the first organic solvent valve 38, the second organic solvent valve 39, the suction valve 42, the water valve 47, the inert gas valve 49, and the like.

FIG. 5 is a flowchart for explaining a first substrate processing example performed by the processing unit 2. 6A to 6E are schematic diagrams for explaining a first substrate processing example.

Hereinafter, a first substrate processing example will be described with reference to FIGS. 2A, 2B, and 5. 3A to 3C and 6A to 6E are appropriately referred to. The first substrate processing example is a resist removal processing for removing a resist formed on the upper surface of the substrate W. As described below, the first substrate processing example includes an SPM supply step (first chemical solution supply step) S3, which supplies SPM to the upper surface of the substrate W, and an organic solvent step (second chemical solution supply step). S5 is to supply a liquid organic solvent such as IPA to the upper surface of the substrate W. SPM and organic solvents are a combination of chemical liquids that are dangerous (in this case, a rush reaction) by contact with the mixture.

When the substrate W is subjected to a resist removal treatment by the processing unit 2, the substrate W after the high-dose ion implantation processing is carried into the chamber 4 (step S1 in FIG. 5). The carried-in substrate W is a substrate that has not been subjected to a treatment for ashing the resist. In addition, a fine pattern with a high aspect ratio is formed on the surface of the substrate W.

In a state where the opposing member 7 (that is, the barrier plate 21 and the central axis nozzle 33) is retracted to the retracted position, the SPM nozzle 28 is retracted from above the rotation jig 5, and the first protective cover 53 and the second protective cover 54 are lowered to the lower position. (The upper ends of the first protective cover 53 and the second protective cover 54 are both arranged below the holding position of the substrate W.) The control device 3 controls the substrate transfer robot CR (see FIG. 1) holding the substrate W. The hand H (see FIG. 1) enters the inside of the chamber 4. Thereby, the substrate W is transferred to the rotation jig 5 with the surface of the substrate W (resist-forming surface) facing upward. Thereafter, the substrate W is held by the rotation jig 5.

Thereafter, the control device 3 starts the rotation of the substrate W by the rotation motor 17 (step S2 in FIG. 5). The substrate W is raised to a predetermined liquid processing speed (in the range of about 10 rpm to 500 rpm, for example, about 400 rpm) and maintained at the liquid processing speed.

Next, the control device 3 performs an SPM supply step for supplying a high-temperature SPM to the upper surface of the substrate W (step S3 in FIG. 5). In the SPM supply step S3, the control device 3 supplies the high-temperature SPM from the SPM nozzle 28 to, for example, the central portion of the upper surface of the substrate W, and peels off the resist from the surface of the substrate W.

Specifically, the control device 3 controls the nozzle moving unit 32 to move the SPM nozzle 28 from the retracted position to the processing position. Thereby, as shown in FIG. 6A, the SPM nozzle 28 is disposed above the center portion of the substrate W.

After the SPM nozzle 28 is disposed at the processing position (for example, the central position), the control device 3 controls the protective cover lifting unit 55 to raise the first protective cover 53 and the second protective cover 54 to the upper positions, respectively (to shift the state of the processing cover 12 to (First upper position state), and the first protective cover 53 faces the peripheral end surface of the substrate W.

As shown in FIG. 6B, in the first upper position of the processing cover 12, the first interval 87 (for example, slightly zero) between the upper end of the second protective cover 54 and the lower end surface 29 a of the nozzle arm 29 becomes smaller than the nozzle The second gap 88 (for example, about 5 mm) between the lower end surface 29 a of the arm 29 and the discharge port 28 a of the SPM nozzle 28 is narrow. Furthermore, in the first upper position of the processing cover 12, the upper end of the second protective cover 54 is located at an intermediate position between the lower end surface 29 a of the nozzle arm 29 and the upper surface of the substrate W held by the rotation jig 5. M (see FIG. 3B) is also an upper position.

After the first protective cover 53 and the second protective cover 54 are raised, the control device 3 opens the SPM valve 31. Thereby, as shown in FIG. 6B, the high-temperature (for example, about 170C to about 180C) SPM is supplied from the SPM pipe 30 to the SPM nozzle 28, and the high-temperature SPM is sprayed from the discharge port 28a of the SPM nozzle 28. The high-temperature SPM sprayed from the SPM nozzle 28 passes the liquid to the center of the upper surface of the substrate W, and receives the rotation of the substrate W so that the centrifugal force flows outward along the upper surface of the substrate W. Thereby, the entire upper surface of the substrate W is covered with the liquid film of the SPM. With the high-temperature SPM, the resist is peeled from the surface of the substrate W and removed from the surface of the substrate W. In addition, the supply position of the high-temperature SPM from the SPM nozzle 28 may be moved (scanned) between the central portion of the upper surface of the substrate W and the peripheral portion of the upper surface.

The SPM supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is received by the inner wall of the first protective cover 53. Next, the SPM flowing down the inner wall of the first protective cover 53 is guided to the first liquid discharge pipe 61 after being collected in the first liquid discharge tank 59 and is used to discharge the SPM. Discharge liquid processing device (not shown) for processing.

In the SPM supply step S3, since the SPM used is very high temperature (for example, about 170 ° C. to about 180 ° C.), a large amount of mist MI of the SPM is generated. By supplying the SPM to the substrate W, the mist MI of the SPM generated in a large amount around the upper surface of the substrate W floats on the upper surface of the substrate W.

In the SPM supply step S3, the height of the protective cover (at least the second protective cover 54) is a sufficient height for the purpose of catching the chemical liquid scattered from the substrate W. However, in the case of a lower height position, The atmosphere of the mist MI or the like containing SPM in the inside of the processing cover 12 may flow out of the processing cover 12 through the upper opening 12 a of the processing cover 12 and spread to the inside of the chamber 4. Since the atmosphere of the mist MI and the like containing SPM becomes fine particles and becomes a cause for adhering to the substrate W and contaminating the substrate W and the inner wall of the partition wall 13 of the contamination chamber 4, such an atmosphere is not expected to spread to the surroundings.

In the SPM supply step S3 of the first substrate processing example, in a state where the first protective cover 53 and the second protective cover 54 are arranged at the upper position (that is, the first upper position of the processing cover 12), the high-temperature SPM is removed. It is supplied to the upper surface of the substrate W in a rotating state. In the first upper position of the processing cover 12, an annular gap 86 (see FIG. 2) formed between the upper end of the second protective cover 54 and the substrate facing surface 6 of the barrier plate 21 in a state of being disposed at the upper position P1 (see FIG. 3B) is set to narrow. Therefore, it is difficult for the atmosphere in the processing cover 12 to flow out into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere of the mist MI including the SPM in the interior of the processing cover 12 from flowing out to the interior of the chamber 4.

In addition, in the first upper position of the processing cover 12, the gap S between the protrusion 75 and the partition plate 16 becomes slightly zero, so the downflow DF3 (see FIG. 3B) flowing inside the chamber 4 is The lower space 4 a of the chamber 4 is entered between the rotation clamp 5 and the front end of the second protective cover 54. This can more effectively suppress the atmosphere of the mist MI containing the SPM from flowing out of the processing cover 12 into the interior of the chamber 4.

In addition, in the first upper position state of the processing cover 12 (the state shown by a solid line in FIG. 3B), the first protective cover 53 is closest to the second protective cover 54. In this state, the folded-back portion 74 overlaps the upper end portion 71 of the guide portion 66 in the horizontal direction. Therefore, in the SPM supply step S3, the mist MI of the SPM floating on the upper surface of the substrate W does not enter between the first protective cover 53 and the second protective cover 54. Before the start of the SPM supply step S3, the IPA may be attached to the inner wall of the second protective cover 54. However, since the mist MI of the SPM does not enter between the first protective cover 53 and the second protective cover 54, it is possible to suppress or prevent the SPM and IPA from coming into contact with each other in the inside of the processing cover 12 in the SPM supply step S3. Thereby, the inside of the processing cover 12 can be suppressed or prevented from being a source of particle generation.

When a predetermined period has elapsed from the start of the high-temperature SPM, the SPM supply step S3 ends. Specifically, the control device 3 closes the SPM valve 31 and stops ejecting the high-temperature SPM from the SPM nozzle 28. In addition, the control device 3 controls the shield lifting unit 55 so that the first shield 53 and the second shield 54 are lowered to the liquid-receiving position P2, respectively. After the first protective cover 53 and the second protective cover 54 start to descend, the control device 3 controls the nozzle moving unit 32 to retreat the SPM nozzle 28 to the retreat position.

Next, a water supply step (step S4 in FIG. 5) is performed to supply water as the cleaning liquid to the upper surface of the substrate W. Specifically, the control device 3 opens the water valve 47. Thereby, as shown in FIG. 6C, water is sprayed from the central axis nozzle 33 (the second nozzle 25 (see FIG. 2B)) toward the center portion of the upper surface of the substrate W. The water sprayed from the central axis nozzle 33 flows into the center of the upper surface of the substrate W, receives the centrifugal force caused by the rotation of the substrate W, and flows toward the peripheral edge portion of the substrate W on the upper surface of the substrate W. The SPM on the substrate W is flushed to the outside by the water and discharged to the periphery of the substrate W. As a result, the liquid film system of SPM on the substrate W is replaced with a liquid film for covering the entire area of the upper surface of the substrate W. That is, SPM is flushed from the upper surface of the substrate W by water as the cleaning liquid.

The water flowing on the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W, and is caught by the inner wall of the first protective cover 53. Next, the water system flowing down the inner wall of the first protective cover 53 is collected in the first liquid discharge tank 59, and then guided to the first liquid discharge pipe 61, and is guided to the water for liquid drainage treatment. Drainage treatment device (not shown). When the liquid of the SPM used in the SPM supply step adheres to the inner wall of the first protective cover 53, the first drain tank 59, and / or the tube wall of the first drain pipe 61, the SPM liquid system Swept by water.

When a predetermined period of time has elapsed from the start of the water ejection, the control device 3 closes the water valve 47 to stop the water ejection from the second nozzle 25. This completes the water supply step S4.

Next, an organic solvent step for supplying IPA as an organic solvent to the upper surface of the substrate W is performed (step S5 in FIG. 5). Specifically, as shown in FIG. 6D, the control device 3 controls the barrier-barrier elevating unit 27 and arranges the barrier-barrier 21 at an approach position. When the barrier plate 21 is located at the close position, the barrier plate 21 blocks the upper surface of the substrate W from the space around the substrate W.

In addition, the control device 3 controls the shield lifting unit 55, and in a state where the first shield 53 is arranged in the lower position P3, the second shield 54 is arranged in the upper position P1, and the second shield 54 and the substrate W The peripheral end faces are opposite.

In addition, the control device 3 decelerates the rotation of the substrate W to a predetermined paddle speed. The liquid-covering speed means that the centrifugal force of the liquid acting on the upper surface of the substrate W when the substrate W is rotated at the liquid-covering speed is smaller than the surface tension acting between the cleaning liquid and the upper surface of the substrate W or the centrifugal force and the surface The tension is roughly the speed of resistance.

Next, after the rotation speed of the substrate W is lowered to the liquid-covering speed, the control device 3 opens the second organic solvent valve 39 and closes the suction valve 42, and opens the first organic solvent valve 38. Thereby, the IPA from the organic solvent supply source is supplied to the first nozzle 24, and the IPA is ejected from the first nozzle 24 and is deposited on the upper surface of the substrate W.

In the organic solvent step S5, by ejecting IPA from the first nozzle 24, the water system contained in the liquid film on the upper surface of the substrate W is sequentially replaced with IPA. Thereby, the liquid film of IPA for covering the entire upper surface of the substrate W is kept in a liquid-covered state on the upper surface of the substrate W. After the entire liquid film on the upper surface of the substrate W is replaced with the liquid film of the IPA, the supply of the IPA to the upper surface of the substrate W is continued. Therefore, the IPA is discharged from the peripheral edge portion of the substrate W.

The IPA discharged from the peripheral portion of the substrate W is received by the inner wall of the second protective cover 54. Next, the IPA system flowing down the inner wall of the second protective cover 54 is collected into the second liquid discharge tank 62 and then guided to the second liquid discharge pipe 64 and is used to discharge the IPA for liquid treatment. Processing device (not shown).

In this embodiment, the IPA discharged from the peripheral edge portion of the substrate W is caught by the inner wall of the second protective cover 54 facing the peripheral end surface of the substrate W, and is not retreated from the peripheral end surface of the substrate W. The inner wall of the lower first protective cover 53 is closed. Moreover, in the organic solvent step S5, the mist of IPA generated around the substrate W is small, and the mist of IPA is not introduced to the inner wall of the first protective cover 53. The SPM attached to the first protective cover 53 in the SPM supply step S3 is flushed by the water supply in the water supply step S4. Therefore, mixed contact of IPA and SPM does not occur in the organic solvent step S5.

When a predetermined period of time has passed from the start of the IPA ejection, the control device 3 closes the first organic solvent valve 38 and stops the IPA ejection from the second nozzle 25. This completes the organic solvent step S5.

Next, a spin-drying step for drying the substrate W is performed (step S6 in FIG. 5). Specifically, the control device 3 controls the rotation motor 17 in a state where the barrier device 21 is disposed at the close position, thereby accelerating the substrate W as shown in FIG. 6E from the SPM supply step S3 to The rotation speed in each step up to the organic solvent step S5 is a drying rotation speed (for example, several thousand rpm), and the substrate W is rotated at the drying rotation speed. Thereby, a large centrifugal force is applied to the liquid on the substrate W, and the liquid system adhered to the substrate W is thrown away from the periphery of the substrate W. In this manner, the liquid is removed from the substrate W and the substrate W is dried. In addition, the control device 3 controls the baffle plate rotation unit 26 to rotate the baffle plate 21 in the rotation direction of the substrate W at a high speed.

In addition, the organic solvent suction step for sucking the organic solvent in the organic solvent pipe 37 is performed in parallel with the centrifugal dehydration step S6. In the organic solvent suction step, the organic solvent existing in the organic solvent pipe 37 after the organic solvent step S5 is sucked by the suction unit 44.

Specifically, after the organic solvent step S5 is completed, the control device 3 opens the second organic solvent valve 39, closes the first organic solvent valve 38, and opens the suction valve 42. Thereby, the inside of the organic solvent downstream side portion 43 is exhausted, and the IPA system existing in the organic solvent downstream side portion 43 is introduced (sucked) to the suction pipe 41. The suction of the IPA is performed until the front end surface of the IPA is retracted to a predetermined standby position in the pipe. When the front end surface of the IPA is retracted to the standby position, the control device 3 closes the suction valve 42. This prevents IPA from dripping (dripping) from the organic solvent pipe 37 in the centrifugal dehydration step S6.

When a predetermined period of time has passed from the substrate W acceleration, the control device 3 controls the rotation motor 17 to stop the rotation jig 5 from rotating the substrate W (step S7 in FIG. 5), and controls the blocking plate rotation unit 26 to stop the blocking plate 21 from rotating.

Thereafter, the substrate W is carried out from the chamber 4 (step S8 in FIG. 5). Specifically, the control device 3 raises the barrier plate 21 and arranges it in the retracted position, and lowers the second protective cover 54 to the lower position P3, and arranges the first protective cover 53 and the second protective cover 54 to be held by the substrate W. The location is also below. After that, the control device 3 keeps the hand of the substrate transfer robot CR holding the substrate W on the rotation jig 5 and retracts the hand H of the substrate transfer robot CR from the inside of the chamber 4. Thereby, the substrate W from which the resist has been removed from the surface is carried out from the chamber 4. According to this first substrate processing example, the SPM supply step S3 is performed in the first upper position of the processing cover 12. Therefore, in the SPM supply step S3, the first protective cover 53 can be arranged as much as possible, and the first chemical liquid scattered from the substrate can be well received by the first protective cover 53.

In addition, in the SPM supply step S3 and the organic solvent supply step S5, since the protective covers (the first protective cover 53 and the second protective cover 54) for receiving the processing liquid are separated, it is possible to suppress or prevent the processing cover 12 SPM is mixed in contact with IPA. Thereby, the inside of the processing cover 12 can be suppressed or prevented from being a source of particle generation.

FIG. 7 is a schematic cross-sectional view showing an example of a configuration example of a lower portion of the processing unit 2 in an enlarged manner. A branch pipe for water 102 and a branch pipe for IPA 103 may be connected to the tip of the second liquid discharge pipe 64 of the second cover portion 52. That is, the destination of the liquid flowing through the second liquid discharge pipe 64 (the destination of the liquid passing through the partitioned internal space between the first protective cover 53 and the second protective cover 54) is divided into two. Branch piping (water branch piping 102 and IPA branch piping 103). The case where such two branch pipes are used is described below.

A water opening / closing valve 105 for opening and closing the water branching pipe 102 is sandwiched between the water branching pipe 102. An IPA on-off valve 106 is provided between the IPA branch piping 103 to open and close the IPA branch piping 103. When the water on-off valve 105 is opened with the IPA on-off valve 106 closed, the flow destination of the liquid flowing through the second discharge pipe 64 is set to the water branch pipe 102. The IPA on-off valve 106 is opened with the water on-off valve 105 closed, and the flow destination of the liquid flowing through the second discharge pipe 64 is set to the IPA branch pipe 103.

8A to 8C are schematic diagrams for explaining a second substrate processing example. In the basic processing flow, the second substrate processing example is not different from the first substrate processing example. A second substrate processing example will be described with reference to FIGS. 2A, 2B, 5 and 7. 8A to 8C are appropriately referred to.

The difference from the first substrate processing example is that the second substrate processing example is in the SPM supply step S3, and the state of the processing cover 12 is not disposed in the first upper position, but is disposed in the second upper position. The second upper position state of the processing cover 12 means a state where the first protective cover 53 is disposed at the liquid-receiving position P2 and the second protective cover 54 is disposed at the upper position. In addition, the difference from the first substrate processing example is that although the processing cover 12 is set to the second upper position in the SPM supply step S3, the mist MI of the SPM may be attached to the first protective cover 53 and the second protective cover. The wall of the internal space partitioned between the covers 54 (the inner wall of the second protective cover 54 and the outer wall of the first protective cover 53) may be a problem. However, in the water supply step S4, the processing cover 12 is set to the second liquid contact. Position and supply water scattered from the peripheral edge portion of the substrate W to the internal space partitioned between the first protective cover 53 and the second protective cover 54, thereby attaching a wall of the internal space with a water jet (the first The inner wall of the second protective cover 54 and the outer wall of the first protective cover 53 etc.) of the mist PM of the SPM. Hereinafter, the SPM supply step S3 of the second substrate processing example will be described in detail.

In the SPM supply step S3, after the SPM nozzle 28 is disposed at the processing position, the control device 3 controls the protective cover lifting unit 55, thereby raising the first protective cover 53 to the liquid contact position P2 and raising the second protective cover 54 to the upper position. At the position P1, the second protective cover 54 faces the peripheral end surface of the substrate W.

As in the first upper position state of the processing cover 12, in the second upper position state of the processing cover 12, the first gap 87 (for example, slightly different from the upper end of the second protective cover 54 and the lower end surface 29 a of the nozzle arm 29) Zero) is narrower than the second interval 88 (for example, about 5 mm) between the lower end surface 29 a of the nozzle arm 29 and the discharge port 28 a of the SPM nozzle 28. Further, the second upper position of the processing cover 12 is such that the upper end of the second protective cover 54 is located at an intermediate position M (refer to the middle surface M between the lower end surface 29 a of the nozzle arm 29 and the upper surface of the substrate W held by the rotation jig 5 (see Figure 3B) is also the upper position. After the second protective cover 54 is raised, the control device 3 opens the SPM valve 31 (see FIG. 2A).

As shown in FIG. 8A, in the SPM supply step S3 of the present embodiment, the state where the first protective cover 53 is disposed at the wetted position P2 and the second protective cover 54 is disposed at the upper position P1 (that is, the first protective cover 12 In the two upper position states), a high-temperature SPM is supplied to the upper surface of the substrate W in a rotating state. The SPM supplied to the upper surface of the substrate W receives centrifugal force due to the rotation of the substrate W, and is scattered from the peripheral edge portion of the substrate W to the side. Next, the SPM system scattered to the side is caught by the first protective cover 53 at the liquid contact position P2 and flows down along the inner wall of the first protective cover 53. The SPM flowing down the first protective cover 53 is guided to the first liquid discharge pipe 61 and is guided to a liquid discharge processing device (not shown) for discharging the SPM.

In addition, in the SPM supply step S3, since the SPM used is very high temperature (for example, about 170 ° C. to about 180 ° C.), a large amount of mist MI of the SPM is generated. By supplying the SPM to the substrate W, the mist MI of the SPM generated in a large amount around the upper surface of the substrate W floats on the upper surface of the substrate W.

In the second upper position of the processing cover 12, an annular gap 86 (see FIG. 2) formed between the upper end of the second protective cover 54 and the substrate facing surface 6 of the barrier plate 21 in a state of being disposed in the upper position P1 (see FIG. 3B) is set to narrow. Therefore, it is difficult for the atmosphere in the processing cover 12 to flow out into the chamber 4 through the annular gap 86. Thereby, it is possible to suppress or prevent the atmosphere of the mist MI including the SPM in the interior of the processing cover 12 from flowing out to the interior of the chamber 4.

In addition, in the second upper position of the processing cover 12, the gap S between the projection 75 and the partition plate 16 becomes slightly zero, so the downflow DF3 (see FIG. 3B) flowing inside the chamber 4 is By entering the lower space 4 a of the chamber 4 between the rotation jig 5 and the front end of the second protective cover 54, the atmosphere of the mist MI containing the SPM can be more effectively suppressed from flowing out of the processing cover 12 into the interior of the chamber 4. .

In the SPM supply step S3 of the second substrate processing example, the mist MI of the SPM enters the internal space defined between the first protective cover 53 and the second protective cover 54 so that the mist MI of the SPM adheres to The wall of the internal space (the inner wall of the second protective cover 54 and the outer wall of the first protective cover 53) may be at risk.

After the SPM supply step S3 is completed, the control device 3 controls the protective cover lifting unit 55 to lower the first protective cover 53 from the liquid contact position P2 to the lower position P3, and lower the second protective cover 54 from the upper position P1 to the liquid contact. Position P2. That is, the state of the processing cover 12 is shifted to the state of the second liquid contact position. In the state of the second liquid contact position of the processing cover 12, the second protective cover 54 faces the peripheral end surface of the substrate W. Before the water is ejected, the control device 3 closes the IPA on-off valve 106 and opens the water on-off valve 105 to set the flow destination of the liquid flowing through the second discharge pipe 64 to the water branch pipe 102. After the first protective cover 53 starts to descend, the control device 3 controls the nozzle moving unit 32 to retract the SPM nozzle 28 to the retracted position.

Next, a water supply step is performed (step S4 in FIG. 5). Specifically, the control device 3 opens the water valve 47. As a result, as shown in FIG. 8B, water is sprayed from the central axis nozzle 33 (the second nozzle 25) (see FIG. 2B) toward the center of the upper surface of the substrate W. The water sprayed from the central axis nozzle 33 flows into the center of the upper surface of the substrate W, receives the centrifugal force caused by the rotation of the substrate W, and flows toward the peripheral edge portion of the substrate W on the upper surface of the substrate W.

The water system supplied to the upper surface of the substrate W is scattered from the peripheral edge portion of the substrate W toward the side of the substrate W and enters the internal space (the second protective cover) defined between the first protective cover 53 and the second protective cover 54. The inner wall of 54 and the outer wall of the first protective cover 53, etc.) are also connected to the inner wall of the second protective cover 54. Next, the water system flowing down the inner wall of the second protective cover 54 is collected in the second liquid discharge tank 62 and then guided to the second liquid discharge pipe 64. In the water supply step S4 of the second substrate processing example, the flow destination of the liquid flowing through the second liquid discharge pipe 64 is set to the water branch pipe 102 (see FIG. 7). The flowing water system is supplied to the water branch pipe 102, and is then transferred to a processing device (not shown) for draining water.

After the above SPM supply step S3, the mist MI of the SPM will be attached to the partitioned internal space (the inner wall of the second protective cover 54 and the first protective cover 53) between the first protective cover 53 and the second protective cover 54. External walls, etc.). However, in the water supply step S4, the mist MI of the SPM adhering to the wall is flushed by the water supplied to the internal space partitioned between the first shield 53 and the second shield 54. When a predetermined period has elapsed from the start of the ejection of water, the water supply step S4 ends.

Next, an organic solvent step for supplying IPA as an organic solvent to the upper surface of the substrate W is performed (step S5 in FIG. 5). Before the IPA starts to spray, the control device 3 closes the water on-off valve 105 and opens the IPA on-off valve 106, thereby setting the flow destination of the liquid flowing through the second discharge pipe 64 to the IPA branch pipe 103 (see Figure 7). The control system other than the above in the organic solvent step S5 is the same as that in the case of the first substrate processing example.

The IPA discharged from the peripheral edge portion of the substrate W is received by the inner wall of the second protective cover 54. Next, the IPA system flowing down the inner wall of the second protective cover 54 is collected by the second liquid discharge tank 62 and guided to the second liquid discharge pipe 64 and is guided to the IPA for liquid discharge treatment. Processing device (not shown). In the organic solvent step S5 in the second substrate processing example, since the flow destination of the liquid flowing through the second liquid discharge pipe 64 is set to the IPA branch pipe 103, the IPA system flowing through the second liquid discharge pipe 64 After being supplied to the IPA branch piping 103, it is conveyed to a processing device (not shown) for draining IPA. When a predetermined period has elapsed after the ejection from the IPA, the organic solvent step S5 ends. Next, the control device 3 executes a centrifugal dehydration step (step S6 in FIG. 5). After the centrifugal dehydration step S6 is completed, the control device 3 stops the rotation jig 5 from rotating the substrate W (step S7 of FIG. 5), and stops the blocking plate 21 from rotating. Thereafter, the substrate W is carried out from the chamber 4 (step S8 in FIG. 5). Since each of these steps is the same as that in the case of the first substrate processing example, the description of each is omitted.

In the second substrate processing example, after the substrate W is carried out, a cover portion cleaning step for cleaning the processing cover 12 is performed. In the cover part washing step, water is used as a washing liquid.

In the cover washing step, the control device 3 starts the rotation of the rotation base 19 by the rotation motor 17 (see FIG. 2A).

Before starting to supply water to the rotation base 19, the control device 3 controls the shield lifting unit 55 (see FIG. 2A), holds the first shield 53 at the lower position P3, and raises the second shield 54 to the receiving position.液 位置 P2. That is, as shown in FIG. 8C, the state of the processing cover 12 is shifted to the state of the second liquid contact position. In the second liquid contact position of the processing cover 12, the second protective cover 54 faces the peripheral edge portion of the upper surface 19 a of the rotation base 19.

Before the water is supplied to the rotation base 19, the control device 3 closes the IPA on-off valve 106 (see FIG. 7) and opens the water on-off valve 105 (see FIG. 7). The flow destination of the liquid flowing through the piping 64 is set to the water branch piping 102 (see FIG. 7).

When the rotation speed of the rotation base 19 reaches a predetermined rotation speed, the control device 3 opens the water valve 47 (refer to FIG. 2). Thereby, as shown in FIG. 8C, water is ejected from the central axis nozzle 33 (the second nozzle 25 (see FIG. 2B)). The water sprayed from the central axis nozzle 33 carries the liquid to the center of the upper surface 19a of the rotation base 19, receives the centrifugal force caused by the rotation of the rotation base 19, and faces the rotation base 19 on the upper surface 19a of the rotation base 19 The peripheral edge portion flows and scatters sideways from the peripheral edge portion of the rotation base 19.

The water system scattered from the peripheral portion of the rotation base 19 enters the internal space partitioned between the first protective cover 53 and the second protective cover 54 (the inner wall of the second protective cover 54 and the outer wall of the first protective cover 53). Etc.), and is caught by the inner wall of the second protective cover 54. Next, the water system flowing down the inner wall of the second protective cover 54 is collected in the second liquid discharge tank 62 and then guided to the second liquid discharge pipe 64 (see FIG. 7). In the cover part washing step, since the flow destination of the liquid flowing through the second discharge pipe 64 is set to the water branch pipe 102 (see FIG. 7), the water system flowing through the second discharge pipe 64 After being supplied to the water branch pipe 102, it is sent to a processing device (not shown) for draining water.

After the substrate W is carried out, although the liquid of IPA adheres to the wall of the internal space partitioned between the first protective cover 53 and the second protective cover 54 (the inner wall of the second protective cover 54 and the first protective cover 53) Outer wall) and the pipe walls of the second liquid discharge tank 62 and the second liquid discharge piping 64, but the IPA liquid is flushed with water by performing a cover washing step.

When a predetermined period of time has elapsed from the start of water spraying, the control device 3 closes the water valve 47 and stops supplying water to the upper surface 19 a of the rotation base 19. The control device 3 controls the rotation motor 17 to stop the rotation of the rotation base 19. Thereby, the washing | cleaning process of a cover part is complete | finished.

In the step of cleaning the cover portion of the second substrate processing example, the rotating jig 5 may hold a dummy substrate (having the same diameter as the substrate W) made of silicon carbide (SiC) or the like, and may rotate it. The dummy substrate in the state is supplied with a washing liquid such as water, thereby scattering water from the periphery of the dummy substrate to the side of the dummy substrate.

According to this second substrate processing example, the SPM supply step S3 is performed in the second upper position state of the processing cover 12. Therefore, in the SPM supply step S3, the second protective cover 53 can be arranged as much as possible, and the first chemical liquid scattered from the substrate can be well received by the second protective cover 53.

In addition, the mist MI of the SPM generated in the SPM supply step S3 is attached to the wall of the internal space partitioned between the first protective cover 53 and the second protective cover 54 (the inner wall of the second protective cover 54 and Outer wall of the first protective cover 53). However, in the water supply step S4 after the end of the SPM supply step S3, the water scattered from the peripheral edge portion of the substrate W is supplied to the internal space partitioned between the first protective cover 53 and the second protective cover 54 (second The inner wall of the protective cover 54 and the outer wall of the first protective cover 53 etc.), thereby SPM adhering to the inner wall of the inner space can be flushed. Therefore, it is possible to suppress or prevent the SPM and the IPA from coming into contact with each other in the interior of the processing cover 12. Thereby, the inside of the processing cover 12 can be suppressed or prevented from being a source of particle generation.

In addition, in the organic solvent supply step S5, the processing liquid discharged from the substrate W is received by the inner wall of the second protective cover 54. Therefore, after the end of the organic solvent supply step S5, the liquid of the IPA adheres to the wall of the internal space partitioned between the first protective cover 53 and the second protective cover 54. However, since the cover portion washing step is performed after the start of the organic solvent supply step S5, it is possible to attach to the wall of the internal space partitioned between the first protective cover 53 and the second protective cover 54 by a water jet (the first The inner wall of the second protective cover 54 and the outer wall of the first protective cover 53) and the IPA liquid of the second liquid discharge tank 62 and the pipe wall of the second liquid discharge pipe 64. Therefore, it is possible to suppress or prevent the SPM and the IPA from coming into contact with each other in the inside of the processing cover 12, thereby suppressing or preventing the inside of the processing cover 12 from being a particle generation source.

In the second substrate processing example, the water supply step S4 may be performed before the SPM supply step S3 is started.

As described above, according to the present embodiment, in the SPM supply step S3, a high-temperature SPM is supplied to the upper surface of the substrate W in a rotating state while the second shield 54 is disposed at the upper position P1. In a state where the second protective cover 54 is disposed at the upper position P1, the distance between the upper opening 12a of the processing cover 12 and the substrate W is largely secured. In the SPM supply step S3, although the SPM mist is generated by supplying the high-temperature SPM to the substrate W, since the distance between the upper opening 12a of the processing cover 12 and the substrate W is largely ensured, the atmosphere of the mist of the SPM is included. It is difficult to flow out of the processing cover 12 through the upper opening 12 a of the processing cover 12.

Specifically, the upper position P1 of the first protective cover 53 and the second protective cover 54 is formed in an annular gap 86 between the upper end of the protective cover and the opposing member 7 (substrate facing surface 6) than the nozzle. The upper and lower widths W1 of the arms 29 are also large and very narrow. Thereby, the annular gap 86 can be set to the minimum size within the range which allows the nozzle arm 29 to pass. In this case, the amount of the atmosphere flowing out from the inside of the processing cover 12 to the inside of the chamber 4 can be effectively reduced. This makes it possible to more effectively suppress the atmosphere including the SPM from spreading to the surroundings.

In addition, from another viewpoint, the upper position P1 of the first shield 53 and the second shield 54 is lower than the lower end face 29a of the nozzle arm 29 and higher than the ejection outlet 28a. More specifically, the first position 87 between the upper position P1 of the first protective cover 53 and the second protective cover 54 and the lower end surface 38 a of the nozzle arm 29 becomes longer than the lower end surface 29 a of the nozzle arm 29. The second interval 88 from the discharge port 34a of the SPM nozzle 28 is still narrow. In addition, the upper positions P1 of the first protective cover 53 and the second protective cover 54 are the upper ends of the protective covers which are lower than the intermediate position M between the lower end surface 38 a of the nozzle arm 29 and the upper surface of the substrate W held by the rotation jig 5. (Refer to FIG. 3B) The upper position.

By setting the upper position P1 to such a position, the amount of the atmosphere flowing out from the processing cover 12 into the interior of the chamber 4 can be effectively reduced. This makes it possible to more effectively suppress the atmosphere including the SPM from spreading to the surroundings.

Although one of the embodiments of the present invention has been described above, the present invention may be implemented in other forms.

For example, in the first substrate processing example and the second substrate processing example, a cleaning chemical solution supplying step for supplying a cleaning chemical to the upper surface of the substrate W may be performed after the water supply step S4 is completed. In this case, fluoric acid or SC1 (a mixed solution containing NH ₄ OH and H ₂ O ₂ ) can be used as the cleaning solution used in the cleaning solution supply step. After the cleaning solution supplying step is performed, a second water supplying step is performed to flush the chemical solution on the upper surface of the substrate W with the cleaning solution.

In addition, in the first substrate processing example and the second substrate processing example, after the SPM supply step S3 is performed or after the cleaning chemical liquid supply step is performed, hydrogen peroxide water (H ₂ O ₂ ) may be supplied. A step of supplying hydrogen peroxide water to the upper surface (surface) of the substrate W.

In addition, in the above embodiment, IPA is exemplified as an example of an organic solvent used as the second chemical liquid, but other examples include methanol, ethanol, HFE (hydrofluoroether), and acetone. Organic solvents. In addition, the organic solvent is not limited to a case where it is composed of only a monomer component, and may be a liquid mixed with other components. For example, it may be a mixed solution of IPA and acetone, or a mixed solution of IPA and methanol.

Although the embodiments of the present invention have been described in detail, these embodiments are merely specific examples for clarifying the technical contents of the present invention, and the present invention should not be interpreted in a limited manner by these specific examples, and the scope of the present invention is only appended Limited by the scope of patent applications.

The present invention corresponds to Japanese Patent Application No. 2016-163744 filed at the Japan Patent Office on August 24, 2016, and incorporates the entire contents of Japanese Patent Application No. 2016-163744 into the present invention.

Claims (20)

    A substrate processing apparatus includes: a chamber; a substrate holding unit housed in the chamber to hold the substrate in a horizontal posture; a rotation unit that vertically rotates a substrate held by the substrate holding unit. The axis rotates; the nozzle has an ejection port for ejecting liquid from the ejection port toward the main surface of the substrate held by the rotating unit; the first chemical liquid supply unit is used to supply the first chemical liquid to the nozzle; The cover is used for accommodating the substrate holding unit, and has a plurality of cylindrical protective covers. The plurality of cylindrical protective covers include a first protective cover in a cylindrical shape surrounding the periphery of the substrate holding unit, and a plurality of cylindrical protective covers. A cylindrical second protective cover around a protective cover; a lifting unit for lifting at least one protective cover of the plurality of protective covers; and a control device for controlling the rotation unit and the first chemical liquid supply Unit and the aforementioned lifting unit; the aforementioned control device executes: an upper position configuration step of at least one of the aforementioned plurality of protective covers The protective cover is disposed at an upper position, which is set to a predetermined upper position which is higher than a predetermined liquid contact position and can receive the liquid scattered from the substrate through the protective cover. The predetermined liquid contact position may be The first chemical liquid scattered from the substrate rotated by the rotating unit is received by the protective cover; and the first chemical liquid supplying step is performed by the rotating unit while the protective cover is disposed in the upper position. The first chemical solution is supplied to the main surface of the substrate while the substrate is rotated.         The substrate processing apparatus according to claim 1, further comprising: an opposing member disposed above the protective cover, and in a state where the protective cover is disposed at the upper position, and the upper end of the protective cover An annular gap is formed between the substrates, and the substrates have opposing surfaces, and the substrate opposing surfaces face upward from the upper surface of the substrate held by the substrate holding unit.         The substrate processing apparatus according to claim 1 or 2, further comprising: a nozzle arm configured to hold the nozzle and swingably move the nozzle along a main surface of the substrate held by the substrate holding unit. Around the predetermined swing axis, the predetermined swing axis is set outside the rotation range of the substrate; the annular gap is set to be larger than the vertical width of the nozzle arm so that the nozzle arm can span the inside and outside of the rotation range. Big.         The substrate processing apparatus according to claim 1 or 2, further comprising: a nozzle arm that holds the nozzle and is provided to be swingable so as to move the nozzle along a main surface of the substrate held by the substrate holding unit. Around the predetermined swing axis, the predetermined swing axis is set to the side of the substrate holding unit; the upper position is the first position between the upper end of the protective cover and the lower end of the nozzle arm in a state of being disposed in the upper position. A space becomes narrower than the second space between the lower end of the nozzle arm and the discharge port.         The substrate processing apparatus according to claim 1 or 2, wherein the upper end of the protective cover in a state where the upper position is disposed in the upper position is located lower than the lower end of the nozzle arm and the main surface of the substrate held by the substrate holding unit The middle position is also the upper position.         The substrate processing apparatus according to claim 1 or 2, further comprising: a second chemical liquid supply unit for supplying a second chemical liquid of a different type from the first chemical liquid to the main surface of the substrate; The control device further controls the second chemical liquid supply unit; the control device further executes: disposing the first protective cover at an upper end of the first protective cover below a substrate held by the substrate holding unit A step of disposing the second protective cover at the liquid contact position; and a step of supplying a second chemical liquid at the step of disposing the first protective cover at the lower position and disposing the second protective cover at the liquid contact position In the state, the second chemical solution is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit.         The substrate processing apparatus according to claim 6, wherein the control device executes the step of disposing the first protective cover and the second protective cover at the upper position as the upper position disposing step.         The substrate processing apparatus according to claim 7, further comprising: a water supply unit for supplying water to the nozzle; the control device further controls the water supply unit; the control device further executes: A step of disposing a protective cover and the second protective cover at the liquid contact position; and a water supply step, in a state where the first protective cover and the second protective cover are disposed at the liquid contact position, while using the foregoing The rotating unit supplies the main surface of the substrate while rotating the substrate.         The substrate processing apparatus according to claim 6, wherein the control device is configured as a step for disposing the first protective cover at the liquid contact position and disposing the second protective cover at the upper position. Steps to execute.         The substrate processing apparatus according to claim 9, further comprising: a water supply unit for supplying water to the nozzle; the control device further controls the water supply unit; the control device further executes: A step of disposing a protective cover at an upper end of the first protective cover at a position lower than a substrate held by the substrate holding unit, and disposing the second protective cover at the liquid contact position; and a water supply step, In a state where the first protective cover is disposed at the lower position and the second protective cover is disposed at the liquid-contacting position, water is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit.         The substrate processing apparatus according to claim 10, wherein the control device executes the before and / or after the execution of the first chemical liquid supply step and / or before and / or after the execution of the second chemical liquid supply step. Water supply step.         The substrate processing apparatus according to claim 1 or 2, further comprising: a partition plate that vertically divides a lateral area of the substrate holding unit into an upper space and a lower space in the chamber, An exhaust port is opened in the lower space; a gap is formed between the second protective cover and the partition plate; the second protective cover is provided with: an occlusion portion for closing the gap; When the two protective covers are arranged in the upper position, the blocking portion closes the gap, and the gap is formed in a state where the second protective cover is arranged at a predetermined lower position set below the upper position.         The substrate processing apparatus according to claim 1 or 2, wherein the first chemical solution includes a mixed solution of sulfuric acid and hydrogen peroxide water.         A substrate processing method is performed in a substrate processing apparatus. The substrate processing apparatus includes: a chamber; a substrate holding unit housed in the chamber to hold the substrate in a horizontal posture; and a rotating unit. The substrate held by the substrate holding unit rotates around a vertical axis of rotation; and a plurality of protective covers including a cylindrical first protective cover surrounding the periphery of the substrate holding unit and a surrounding area surrounding the first protective cover. A cylindrical second protective cover; the substrate processing method includes: a substrate holding step for holding the substrate by the substrate holding unit; and an upper position disposing step for disposing at least one of the plurality of protective covers on the substrate The upper position is set to a predetermined upper position which is higher than a predetermined liquid contact position and can receive the liquid scattered from the substrate through the protective cover. The predetermined liquid contact position can be protected by the protection. The cover catches the liquid scattered from the substrate rotated by the rotation unit; and the first chemical liquid supply step is the same as described above. The shroud disposed at a position on the state, while the substrate by rotating the rotation unit side of the first main surface of the chemical liquid supplied to the substrate.         The substrate processing method according to claim 14, further comprising: disposing the first protective cover at an upper end of the first protective cover at a position lower than a substrate held by the substrate holding unit, and placing the first A step of disposing two protective covers at the liquid-contacting position; and a step of supplying a second medicinal solution, in a state where the first protective cover is disposed at the lower position and the second protective cover is disposed at the liquid-contacting position A second chemical solution is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit.         The substrate processing method according to claim 14 or 15, wherein the step of disposing the upper position includes a step of disposing the first protective cover and the second protective cover at the upper position.         The substrate processing method according to claim 16, further comprising: a step of disposing the first protective cover and the second protective cover at the liquid-receiving position; and a water supply step based on the first protective cover and In a state where the second protective cover is disposed at the liquid-receiving position, water is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit.         The substrate processing method according to claim 14 or 15, wherein the step of disposing the upper position further includes a step of disposing the first protective cover at the liquid contact position and disposing the second protective cover at the upper position.         The substrate processing method according to claim 18, further comprising: a step of disposing the first protective cover and the second protective cover at the liquid contact position; disposing the first protective cover at the first protective cover A step of disposing the upper end of the second protective cover at the lower position than the substrate held by the substrate holding unit and disposing the second protective cover at the liquid-receiving position; and a water supply step of disposing the first protective cover at the lower position In addition, in a state where the second protective cover is disposed at the liquid-receiving position, water is supplied to the main surface of the substrate while the substrate is rotated by the rotating unit.         The substrate processing method according to claim 19, wherein the water supply step is performed before and / or after execution of the first chemical liquid supply step and / or before and / or after execution of the second chemical liquid supply step. .