RU2431904C2 - Method for manufacturing of semiconductor device - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: in the method to make a semiconductor device, including process of making a hidden insulating layer of silicon dioxide in a semiconductor silicon substrate, a semiconductor structure after formation of the hidden insulating layer is treated with fluorine ions with a dose of (4-6)·10¹³ cm^-2 with energy of 80-100 keV with subsequent thermal burning at the temperature of 800-1100°C for 30-60 sec.

EFFECT: reduced density of defects, lower leakage currents, provision of manufacturability, improved parameters, higher reliability and increased percentage of good devices yield.

Description

The invention relates to the field of production technology of semiconductor devices, in particular to the technology of manufacturing transistors - silicon on an insulator with high radiation resistance.

A known method of manufacturing a semiconductor device with improved radiation resistance [Application 225036, Japan, MKI H01L 21/336] by implanting a p-type silicon substrate with conductivity, followed by deposition of a layer of polycrystalline silicon doped with phosphorus, and implantation of arsenic ions in the drain and source and create dielectric insulation. Semiconductor devices made in this way have significant areas of area that degrade the electrical characteristics and parameters of semiconductor devices.

A known method of manufacturing a radiation-resistant semiconductor device [Application 2667442, France, MKI H01L 23/552] by growing an epitaxial lightly doped active layer on the surface of a heavily doped p- or n-type semiconductor substrate, on which oxygen ions are then implanted to form a hidden insulating layer silicon dioxide, eliminating the effect of radiation-induced charges on the characteristics of the active layer of the device.

The disadvantages of this method are:

- the appearance of excess leakage currents;

- violation of the structure of the epitaxial layer;

- poor technological reproducibility.

The problem solved by the invention is to increase the radiation resistance in semiconductor devices, providing manufacturability, improving parameters, increasing reliability and increasing the percentage of suitable devices.

The problem is solved in that after the formation of a hidden insulating layer of silicon dioxide, the semiconductor structure is treated with fluorine ions with a dose of (4-6) · 10 ¹³ cm ^-2 with an energy of 80-100 keV, followed by thermal annealing at a temperature of 800-1100 ° C for 30 -60 sec

The technology of the method is as follows: in the initial silicon wafers, an insulating layer of silicon dioxide is formed by implantation of oxygen ions at an energy of 180 ÷ 200 keV with an integrated dose of 1.8 · 10 ¹⁸ cm ^-2 . Then, semiconductor structures are treated with fluorine ions with a dose of (4-6) · 10 ¹³ cm ^-2 with an energy of 80-100 keV so that the maximum concentration in the oxide is at the interface - the upper silicon layer - hidden silicon dioxide. To reduce radiation surfaces in the upper silicon layer obtained during ion implantation, thermal annealing is carried out at a temperature of 800-1100 ° C for 30-60 seconds. Next, semiconductor devices are created in the active silicon layer using standard technology.

According to the proposed method, semiconductor structures were manufactured and investigated. The results are presented in the table.

Parameters of semiconductor structures manufactured using standard technology Parameters of semiconductor structures manufactured by the proposed technology Mobility, cm ² / V · s Defect density, cm ^-2 Leakage current, Iout · 10 ¹³ A Mobility, cm ² / V · s Defect density, cm ^-2 Leakage current, Iout · 10 ¹³ A 470 5 · 10 ⁵ 8.5 650 4 · 10 ³ 0.4 450 8 · 10 ⁵ 10.3 610 6 · 10 ³ 0.6 450 7 · 10 ⁵ 12.1 600 5 · 10 ³ 0.7 530 2 · 10 ⁵ 5.2 670 1 · 10 ³ 0.25 520 2 · 10 ⁵ 4.8 690 1 · 10 ³ 0.21 570 1 · 10 ⁵ 4.2 730 0.710 ³ 0.2 460 6 · 10 ⁵ 10.1 600 4 · 10 ³ 0.55 490 3 · 10 ⁵ 7.9 670 2 · 10 ³ 0.38 440 8 · 10 ⁵ 9.8 600 6 · 10 ³ 0.51 490 4 · 10 ⁵ 8.1 665 3 · 10 ³ 0.35 430 5 · 10 ⁵ 8.6 645 4 · 10 ³ 0.41 540 1 · 10 ⁵ 4,5 704 0.910 ³ 0.23 500 3 · 10 ⁵ 7.5 670 1 · 10 ³ 0.34

Experimental studies have shown that the yield of suitable semiconductor structures on a batch of wafers formed in the optimal mode increased by 17.5%.

Effect: reduction of leakage currents, decrease in the density of defects, ensuring manufacturability, improving parameters, increasing reliability and increasing the percentage of suitable devices.

The stability of the parameters over the entire operational temperature range was normal and consistent with the requirements.

The proposed method for manufacturing a semiconductor device by treating a semiconductor structure after forming a hidden insulating layer on a silicon substrate with fluorine ions of a dose of (4-6) · 10 ¹³ cm ^-2 with an energy of 80-100 keV, followed by thermal annealing at a temperature of 800-1100 ° C within 30-60 sec.

Claims (1)

A method of manufacturing a semiconductor device, including the process of forming a hidden insulating layer of silicon dioxide in a semiconductor silicon substrate, characterized in that the semiconductor structure after forming a hidden insulating layer is treated with fluorine ions with a dose of (4-6) · 10 ¹³ cm ^-2 with an energy of 80-100 keV followed by thermal annealing at a temperature of 800-1100 ° C for 30-60 s.