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JPS5732680A - Manufacture of schottky barrier diode - Google Patents

Manufacture of schottky barrier diode

Info

Publication number
JPS5732680A
JPS5732680A JP10751580A JP10751580A JPS5732680A JP S5732680 A JPS5732680 A JP S5732680A JP 10751580 A JP10751580 A JP 10751580A JP 10751580 A JP10751580 A JP 10751580A JP S5732680 A JPS5732680 A JP S5732680A
Authority
JP
Japan
Prior art keywords
layer
manufacture
schottky barrier
barrier diode
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10751580A
Other languages
Japanese (ja)
Other versions
JPS6328344B2 (en
Inventor
Hiroshi Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10751580A priority Critical patent/JPS5732680A/en
Publication of JPS5732680A publication Critical patent/JPS5732680A/en
Publication of JPS6328344B2 publication Critical patent/JPS6328344B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To manufacture a Schottky barrier diode which does not lose its forward characteristics by forming a high resistivity semiconductor region by a ion implantation method on a part contacted with a barrier metallic layer. CONSTITUTION:With an SiO2 film 2a as a mask a boron ion implanted layer 6 is formed on the surface of a silicon substrate 1. Then, a metallic layer 7 is formed on the layers 6 and 2a. Further, it is heat treated to form a barrier metallic layer formed of an alloy layer of the metal of the layer 7 and Si, and the boron is activated. A P<-> type or an N<-> type high resistivity semiconductor region 8 is formed on a part contacted with the edge of the layer 4 of the substrate 1. Eventually, the layer 7 on the layer 2a not alloyed with the Si is removed.
JP10751580A 1980-08-05 1980-08-05 Manufacture of schottky barrier diode Granted JPS5732680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10751580A JPS5732680A (en) 1980-08-05 1980-08-05 Manufacture of schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10751580A JPS5732680A (en) 1980-08-05 1980-08-05 Manufacture of schottky barrier diode

Publications (2)

Publication Number Publication Date
JPS5732680A true JPS5732680A (en) 1982-02-22
JPS6328344B2 JPS6328344B2 (en) 1988-06-08

Family

ID=14461150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10751580A Granted JPS5732680A (en) 1980-08-05 1980-08-05 Manufacture of schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS5732680A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034484A (en) * 1973-06-26 1975-04-02
JPS5068776A (en) * 1973-10-23 1975-06-09
JPS50131463A (en) * 1974-04-02 1975-10-17

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034484A (en) * 1973-06-26 1975-04-02
JPS5068776A (en) * 1973-10-23 1975-06-09
JPS50131463A (en) * 1974-04-02 1975-10-17

Also Published As

Publication number Publication date
JPS6328344B2 (en) 1988-06-08

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