JPS5667975A - Preparation method of displacement changer - Google Patents
Preparation method of displacement changerInfo
- Publication number
- JPS5667975A JPS5667975A JP14336679A JP14336679A JPS5667975A JP S5667975 A JPS5667975 A JP S5667975A JP 14336679 A JP14336679 A JP 14336679A JP 14336679 A JP14336679 A JP 14336679A JP S5667975 A JPS5667975 A JP S5667975A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- detecting body
- semiconductor
- principal surface
- transfer member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Pressure Sensors (AREA)
Abstract
PURPOSE:To seek a flat bonding and an electrical insulation between a semiconductor strain detecting body and a strain transfer member by a method wherein a principal surface of a semiconductor strain detecting body chip located, at least, at the opposite side of a strain sensing area is projected with plasma in an oxidized atmosphere. CONSTITUTION:A strain sensing area 13, a protective insulation film thereof and an electrode are formed on a principal surface of a semiconductor monocrystal wafer. And this is cut into a given size to form a semiconductor strain detecting body chip 16. The second principal surface 14 of the chip 2 located at, at least, the opposite side of the surface wherein a strain sensing area 13 is formed, is plasma- projected to form an insulating oxide 15 on the 2nd principal surface 14. And after the surface of the insulating oxide is metallized, the metallized surface is formed into one body with a strain transfer member 1 by means of a alloy material 3. On this account, since no micro mingled particle exists between the semicoductor strain detecting body and insulating oxide, the strain detecting body and the strain transfer member can be bonded flatly and smoothly, thus, reducing a resistance value deviation
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14336679A JPS5667975A (en) | 1979-11-07 | 1979-11-07 | Preparation method of displacement changer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14336679A JPS5667975A (en) | 1979-11-07 | 1979-11-07 | Preparation method of displacement changer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5667975A true JPS5667975A (en) | 1981-06-08 |
Family
ID=15337104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14336679A Pending JPS5667975A (en) | 1979-11-07 | 1979-11-07 | Preparation method of displacement changer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5667975A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105274A (en) * | 1989-09-27 | 1992-04-14 | Sony Corporation | Circuits for reducing noise in a video signal |
-
1979
- 1979-11-07 JP JP14336679A patent/JPS5667975A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5105274A (en) * | 1989-09-27 | 1992-04-14 | Sony Corporation | Circuits for reducing noise in a video signal |
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