JP4150363B2 - Method for manufacturing device for multi-electron beam drawing apparatus - Google Patents

Description

  The present invention relates to a method for manufacturing a device for a multi-electron beam drawing apparatus.

  A conventional electron beam drawing apparatus is an apparatus capable of drawing a predetermined pattern at a predetermined position of a material to be drawn by irradiating a predetermined position on the drawing material with an electron beam. A circuit can be fabricated. In order to increase the processing speed of the electron beam drawing apparatus, a multi-electron beam drawing apparatus that performs drawing or length measurement using a large number of electron beams (multi-electron beams) at the same time is required. In order to irradiate or block the electron beam to the drawing material, a blanker that is a deflector for deflecting the electron beam is required.

  By arranging a large number of through-holes and deflection electrodes of this blanker on the substrate, it is possible to individually control a large number of electron beams. That is, when the material to be drawn is irradiated with an electron beam, an equipotential voltage is applied between two deflection electrodes arranged in parallel to the through hole so as to pass through the through hole formed in the substrate. On the other hand, when the electron beam is cut off, positive and negative voltages are simultaneously applied to the respective deflection electrodes to greatly deflect the electron beam and cut off the irradiation of the electron beam onto the drawing material.

  A conventional blanking aperture array (blanker array) is disclosed in Japanese Patent Laid-Open No. 11-354418 (Patent Document 1). This blanking aperture array is an array in which through holes are formed on a substrate and two deflection electrodes arranged in parallel adjacent to the through holes are formed by plating. In the manufacturing method, recesses corresponding to the blanking aperture array are formed on the silicon substrate, the deflection electrode is formed by plating adjacent to each recess, and then the conductor layer used as the plating base is removed from the silicon substrate surface. Thereafter, the back surface of the silicon substrate is wet-etched to form a membrane. This wet etching is performed in a protected state except for a part of the back surface of the silicon substrate. In the portion where the recess is formed, wet etching is performed until the bottom surface of the recess is reached, and a through hole is formed in the recess.

  A conventional blanking aperture array (blanker array) is disclosed in Japanese Patent Laid-Open No. 1-240721 (Patent Document 2). The manufacturing method includes providing a recess corresponding to the shape of the deflection electrode in the silicon substrate, forming an insulating layer in the opening, and then laminating a conductive material on the insulating layer to form a pair of deflection electrodes. And the deflection | deviation electrode which opposes in a through-hole is formed by the process of removing the board | substrate material between a pair of deflection | deviation electrodes.

JP-A-11-354418 JP-A-1-240721

  The blanker array has a role of irradiating / blocking the drawing material with an electron beam, and irradiating / blocking the electron beam by deflecting the electron beam by applying a voltage to the deflection electrode. The deflection angle is controlled by the acceleration voltage of the electron beam, the aspect ratio of the deflection electrode, and the voltage applied to the deflection electrode. Since there are upper limit values for the acceleration voltage of the electron beam and the voltage applied to the deflection electrode, it is necessary to form a deflection electrode having an aspect ratio of 4 or more in order to obtain a sufficient deflection angle.

  When a deflection electrode with a high aspect ratio is formed by plating, the penetration of the plating solution into the hole or groove, the plating time becomes longer, voids are generated inside or on the surface of the deflection electrode, and the shape of the deflection electrode is lost. There is a problem that occurs.

  The blanking aperture array manufacturing method of Patent Document 1 described above is very complicated, and therefore, when an attempt is made to increase the number of arrays, it is difficult to manufacture a large number of blanking aperture arrays with high accuracy and yield. there were.

  Moreover, since the deflection electrode is formed by removing the substrate material between the opposing deflection electrodes in the blanking aperture array manufacturing method of Patent Document 2 described above, the substrate material and the insulating layer are formed on the surface of the deflection electrode. There is a possibility that the electric field necessary for deflecting the electron beam between the deflection electrodes may not be generated reliably.

  An object of the present invention is to provide a method of manufacturing a device for a multi-electron beam lithography apparatus, which can produce a deflection electrode in a through hole having a high aspect ratio with high accuracy and yield and with high reliability of the deflection electrode and wiring. There is to do.

  To achieve the above object, the present invention includes a step of forming a large number of through holes having an aspect ratio of 4 or more in a silicon substrate, a step of forming an insulating film on the surface of the silicon substrate and the side wall surface of the through holes, Forming a resist on the entire surface of the silicon substrate formed of the insulating film and the inside of the through-hole, exposing and developing the resist, and providing a deflection electrode on a side wall surface facing the through-hole, Forming a resist pattern for forming wirings on the surface of the silicon substrate, forming a deflection electrode metal film on the side wall surface of the through-hole using the resist pattern, and from the deflection electrode metal film; Forming a wiring metal film extending on the surface of the silicon substrate; removing the resist pattern; the deflection electrode metal film; and the wiring metal film. In that further to have a, a step of the plating to the deflection electrodes and wiring metal film.

A more preferable specific configuration of the present invention is as follows.
(1) A resist is formed on the entire surface of the silicon substrate and the inside of the through hole using a dry film resist.
(2) A dry film resist is applied from both sides of the silicon substrate under pressure and heating conditions to form a resist on the surface of the silicon substrate and the entire interior of the through hole.
(3) The heating temperature of the dry film resist is set to a temperature near the softening point of the resist material.
(4) Forming the metal film using the resist pattern by sputtering or vapor deposition.
(5) The metal film is laminated from both sides of the silicon substrate by sputtering or vapor deposition.
(6) The metal film using the resist pattern is formed by laminating an adhesion film, a low resistance film, and an antioxidant film in this order.
(7) The metal film is plated by an electroless plating method.

In order to achieve the above object, the present invention includes a step of forming a large number of through holes having an aspect ratio of 4 or more in a silicon substrate,
Forming an insulating film on a surface of the silicon substrate formed of the insulating film and a side wall surface of the through hole;
Forming a resist on the entire surface of the silicon substrate and the inside of the through hole;
A resist for exposing and developing the resist to form a deflection electrode on the opposite side wall surface of the through hole, a shield electrode on the opposite side wall surface excluding the side wall surface, and a wiring on the surface of the silicon substrate. Forming a pattern;
Using the resist pattern, a metal film for a deflection electrode and a metal film for a shield electrode are formed on the side wall surface of the through hole, and a metal film for wiring extending from the deflection electrode metal film to the surface of the silicon substrate is formed. Process,
Removing the resist pattern;
A step of plating a metal film on the deflection electrode metal film, the shield electrode metal film, and the wiring metal film to form a deflection electrode, a shield electrode, and a wiring;
There is in having it.

A more preferable specific configuration of the present invention is as follows.
(1) The resist pattern is formed by leaving a resist at a corner where the side wall surface of the through hole for forming a deflection electrode and the side wall surface of the through hole for forming a shield electrode intersect.
(2) Forming the metal film using the resist pattern by sputtering or vapor deposition.

  According to the method for manufacturing a device for a multi-electron beam drawing apparatus of the present invention, a deflection electrode can be produced in a through hole having a high aspect ratio with high accuracy and yield and with high reliability of the deflection electrode and wiring.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  First, a multi-electron beam drawing apparatus using a device according to the present invention will be described with reference to FIG. FIG. 1 is a configuration diagram of a multi-electron beam drawing apparatus using a device manufactured by a manufacturing method according to an embodiment of the present invention.

  The multi-electron beam drawing apparatus 100 is configured to realize high-speed drawing. In the multi-electron beam drawing apparatus 100, the electron beam 102 generated by the electron gun 101 is separated and focused into a large number of electron beams 106 using the condenser lens 103, the aperture array 104, and the lens array 105. A number of intermediate images 109 are formed on the separated electron beam 106 by using an element electron optical system array including a blanker array 107 and a blanking stop 108. Each intermediate image 109 is reduced and projected by a reduction electron optical system formed by the first projection lens 110 and the second projection lens 114 to form an electron source image having substantially the same size on the sample 117. FIG. 1 shows a state in which an electron source image is formed on the Faraday cup array 119.

  The main deflector 113 and the sub deflector 115 deflect a large number of electron beams from the element electron optical system array to deflect a large number of electron source images on the sample 117 by substantially the same deflection width in the x and y directions. Is. The main deflector 113 is a deflector having a wide deflection width but a long time until settling, and the sub deflector 115 is a deflector having a narrow deflection width but a short time until settling. The main deflector 113 is an electromagnetic deflector, and the sub deflector 115 is an electrostatic deflector.

  The dynamic focus corrector 111 corrects the focus position shift of the electron source image due to the deflection aberration generated when the deflector is operated. Similar to the dynamic focus corrector 111, the dynamic astigmatism corrector 112 corrects astigmatism of deflection aberration caused by deflection.

  The electron detector 116 detects reflected electrons or secondary electrons generated when the electron beam from the element electron optical system array irradiates the alignment mark formed on the sample 117 or the mark on the sample stage 118. It is.

  The Faraday cup array 119 detects the charge amount and current of the electron source image formed by the electron beam from the element electron optical system array.

  The sample stage 118 is a stage on which the sample 117 is set and can move in the x, y, z direction and the rotation direction, and the sample 117 and the Faraday cup array 119 are mounted thereon.

  The focus control circuit 120 adjusts the electro-optic power (focal length) by using at least two electron lenses of the lens array 105, thereby maintaining the focal position of the lens array 105 on the electron gun side. This circuit controls the focal length.

  The irradiation amount control circuit 121 is a circuit that individually controls on / off of the blanker array 107. Irradiation is turned on / off by deflecting the electron beam by applying a voltage between the deflection electrodes. The electron beam is controlled by irradiating and blocking the blanking stop 108 by deflecting the electron beam.

  The irradiation amount control circuit 121 is a circuit that individually controls on / off of the blanker array 107. Irradiation is turned on / off by deflecting the electron beam by applying a voltage between the deflection electrodes. The electron beam is controlled by irradiating and blocking the blanking stop 108 by deflecting the electron beam.

  The lens control circuit 122 controls the first projection lens 110 and the second projection lens 114 to individually control the optical characteristics (intermediate image forming position, astigmatism) of the electron beam from the element electron optical system array. It is.

  The deflection control circuit 123 is a control circuit that controls the focal point and astigmatism of the reduction electron optical system by controlling the moving point focus corrector 111 and the moving point astigmatism corrector 112. The deflector control circuit 123 is also a circuit that controls the main deflector 113 and the sub deflector 114.

  The electron detector control circuit 124 is a circuit that detects a reflected electron beam and secondary electrons.

  The stage control circuit 125 is a circuit that drives and controls the sample stage 118 that is a stage that can move in the x, y, and z directions and the rotation direction.

  The control circuits 120 to 125 and the Faraday cup array 119 are connected to a CPU 126 that controls the entire multi-electron beam drawing apparatus. The Faraday cup array 119 measures the charge amount and current of the electron beam applied to the sample 117 in the multi-electron beam drawing apparatus 100 and is installed on the sample stage 118. Before irradiating the sample 117 with the electron beam, the sample stage 118 is moved, and the Faraday cup array 119 is arranged at the irradiated position. The charge amount and current of the electron beam irradiated on the Faraday cup 20 are measured and fed back to the CPU 126 to control each control circuit so that the charge amount and current value are uniform. By this method, the charge amount and current value of the electron beam irradiated on the sample 117 can be made uniform, and uneven irradiation of the pattern can be suppressed / calibrated.

  Next, the blanker array 107 that irradiates / blocks the electron beam of the multi-electron beam drawing apparatus 100 will be described with reference to FIGS. FIG. 2 is a schematic view of the blanker 107a constituting the blanker array 107, and FIG. 3 is a cross-sectional view of a portion of the through hole 23 of the blanker 107a. The blanker array 107 is configured by arranging a large number of blankers 107a at equal intervals, and constitutes a device for a multi-electron beam drawing apparatus. The following describes the blanker 107a.

  In the blanker 107a, a through-hole 23 having an aspect ratio of 4 or more is provided in the silicon substrate 21, an insulating film 22 is formed on the entire surface, a pair of deflection electrodes 24 are formed on opposite surfaces of the through-hole 23, and an external signal Wiring 25 is transmitted to the deflection electrode 24, and a shield electrode 26 is formed around them. Here, the through-hole 23 preferably has a rectangular shape (see FIG. 3A), but the side wall surface forming the deflection electrode 24 may be parallel, and a shape provided with a convex portion (see FIG. 3B). A shape having a polygon (see FIG. 3C) or a curved surface (see FIG. 3D) may be used. In FIG. 3, the shield electrode 26 is omitted for convenience of illustration.

  By forming a large number of blankers 107a in an array on the silicon substrate 21, it is possible to simultaneously irradiate / shield a large number of electron beams as described with reference to FIG.

  The electron beam passes through the through hole 23 from above the silicon substrate 21 and irradiates the material 117, which is a drawing material, installed below the silicon substrate 21. At that time, by applying a positive / negative voltage between the deflection electrodes 24 formed on the wall surface of the through hole 23, the electron beam can be deflected, and the deflection angle is prevented from entering the blanking stop 108. It is possible to shield the electron beam.

  Next, a method for manufacturing the blanker array 107 of this embodiment will be described with reference to FIGS. 4 is a process diagram of the manufacturing method of the blanker 107a shown in the AA vertical section of FIG. 2, FIG. 5 is a process diagram of the manufacturing method of the blanker 107a shown in the BB vertical section of FIG. 2, and FIG. Partial process drawing of the manufacturing method of the blanker 107a shown by CC cross section, FIG. 7 is a figure which shows the modification of FIG.

  First, as shown in FIGS. 4A and 5A, a through-hole 23 having a high aspect ratio of 4 or more is formed in the silicon substrate 21. 4 and 5, for convenience of illustration, the through hole 23 having an aspect ratio of 1 or less is illustrated, but in reality, the through hole 23 has an aspect ratio of 4 or more.

Next, as shown in FIGS. 4B and 5B, an insulating film 22 is formed on the silicon substrate 21. The insulating film 22 is formed by laminating a silicon oxide film, a silicon nitride film, or the like using a thermal oxide film (SiO ₂ ) formed by thermal oxidation of the silicon substrate 21 or a CVD (Chemical Vapor Deposition) method.

  Next, as shown in FIGS. 4C and 5C, a resist 37 is formed on the entire surface of the silicon substrate 21 and the inside of the through hole 23. Accordingly, the resist film can be uniformly formed on the surface of the silicon substrate 21 and the resist 37 can be embedded in the entire inside of the through hole 23. A specific method for forming the resist 37 is to apply a dry film resist from both sides of the silicon substrate 21 under pressure and heating conditions. In order to embed the resist 37 in the entire inside of the through hole 23, the heating temperature is preferably set to a temperature near the softening point of the resist 37. If the heating temperature is significantly higher than the softening point, the resist 37 may be modified or deteriorated.

  In addition, after coating a liquid resist by spin or spray, the resist film thickness may be made uniform by polishing or CMP (Chemical Mechanical Polishing) so as not to cause pattern collapse on the silicon substrate 21.

  Next, as shown in FIGS. 4D, 5D, and 6A, the deflection electrode 24 is provided on the opposite side wall surface of the through hole 23, and the shield electrode is provided on the opposite side wall surface excluding the side wall surface. 26 is formed by exposing and developing a resist pattern 38 for forming the wiring 25 on the surface of the silicon substrate 1.

  The resist pattern 38 of the through hole 23 is formed by removing the resist 37 in the corresponding portions on both side wall surfaces forming the deflection electrode 24 and both side wall surfaces forming the shield electrode 26. That is, in the resist pattern 38 of the through hole 23, the resist pattern 38 is formed only at the corners so as to separate the portions for forming the deflection electrode metal film 24a and the shield electrode metal film 26a. As a result, when the deflection electrode metal film 24a and the shield electrode metal film 26a are formed by sputtering or vapor deposition, they can be formed very easily with the entire through hole 23 opened.

  Next, as shown in FIGS. 4E, 5E, and 6B, a metal film is laminated on the resist pattern 38 by sputtering or vapor deposition, and then the resist pattern 38 is removed. Then, the deflection electrode metal film 24a, the wiring metal film 25a, and the shield electrode metal film 26a are formed.

  The metal film formed by sputtering or vapor deposition is preferably laminated in the order of an adhesion film, a low resistance film, and an antioxidant film. When there is a possibility that the adhesion film, the low resistance film, or the antioxidant film may cause diffusion, it is preferable to stack a diffusion prevention film therebetween. Further, the low resistance film and the antioxidant film may be the same metal. Further, in the sputtering or vapor deposition method, since the amount of the metal film laminated on the wall surface of the through hole 32 is small, it is particularly preferable to laminate the metal film from both the front and back surfaces of the silicon substrate 21 by the sputtering or vapor deposition method.

  As shown in FIG. 7A, the resist pattern 38 of the through-hole 23 may be formed so as to penetrate by removing only the portions where the deflection electrode metal film 24a and the shield electrode metal film 26a are formed. Good. In this case, since the aspect ratio becomes large, it becomes difficult to form the metal films 24a and 26a by sputtering or vapor deposition. However, if the metal films 24a and 26a by sputtering or vapor deposition are thickened, FIG. As shown in FIG.

  Next, as shown in FIGS. 4 (f) and 5 (f), the deflection electrode plating metal film 24b and the shield electrode are respectively formed on the deflection electrode metal film 24a, the shield electrode metal film 26a, and the wiring metal film 25a. The plating metal film 26 b and the wiring plating metal film 25 b are plated to form the deflection electrode 24, the shield electrode 26, and the wiring 25.

  The deflection electrode metal film 24a, the wiring metal film 25a, and the shield electrode metal film 26a formed in the silicon substrate 21 and the through hole 23 in FIG. A metal film is laminated on the film 24a, the wiring metal film 25a, and the shield electrode metal film 26a by plating to form the deflection electrode 34b, the wiring 35b, and the shield electrode 36b. The plating electrode plating metal film 24b, the shield electrode plating metal film 26b, and the wiring plating metal film 25b are laminated by plating. As a result, the deflection electrode 24 on the side wall surface of the through hole 23 can be formed with high reliability. The plating method is electrolytic plating or electroless plating. However, when the blanker 107a is arrayed, the electrolytic plating makes it difficult to supply and separate the deflection electrode 34a, the wiring 35a, and the shield electrode 36a. Electroless plating is preferred.

  According to the above-described embodiment, after the through hole 23 having an aspect ratio of 4 or more is formed on the silicon substrate 21, the insulating film 22 is formed, and the deflection electrode 24 and the wiring are formed on the surface of the silicon substrate 21 and in the through hole 23 by the resist 37. 25 and the shield electrode 26 are patterned, and after forming the deflection electrode metal film 24a, the wiring metal film 25a and the shield electrode metal film 26a by a film forming process, the metal films 24b, 25b, 26b is plated to form the deflection electrode 24, the wiring 25, and the shield electrode 26. Therefore, it is possible to improve the connection reliability between the front and rear surfaces of the silicon substrate 21 of the deflection electrode 24 formed on the wall surface of the through hole 23. The resistance of the deflection electrode 24 can be reduced.

  Further, in order to form a resist pattern 38 for the deflection electrode 24 in the fine through-hole 23, when applying the dry film resist 37, the applied pressure and temperature are controlled, so that the resist 37 is formed inside the through-hole 23. The resist film thickness can be uniformly formed on the front and back surfaces of the silicon substrate 21. Resist embedding in the through hole 23 using the dry film resist 37 and resist formation on the front and back surfaces of the silicon substrate 21 are possible. Moreover, it is possible to form the pattern of the deflection electrode 24, the wiring 25 and the shield electrode 26 collectively by forming a resist film by this method, exposing and developing.

Further, after the resist pattern 38 is formed on the silicon substrate 21, metal films 24a, 25a, and 26a are stacked on both sides of the silicon substrate 21 by sputtering or vapor deposition, and the resist 37 is removed, whereby the deflection electrode 24 is removed. The wiring 25 and the shield electrode 26 can be formed at a time. Then, by laminating the metal films 24b, 25b, and 26b by electroless plating on the metal films 24a, 25a, and 26a laminated by sputtering or vapor deposition, the front and back surfaces of the silicon substrate 21 can be connected with high reliability. It is possible to reduce the resistance values of the deflection electrode 24 and the wiring 25.
(Example 1)
A specific process of the device for a multi-electron beam drawing apparatus according to the embodiment of the present invention will be described as an example.

A through-hole 23 having an aspect ratio of 10 was formed by forming a mask for the through-hole 23 on the silicon substrate 21 and performing reactive ion etching of silicon. After removing the mask, a thermal oxide film (SiO ₂ ) of 1.5 μm was laminated on the surface of the silicon substrate 21 and the through hole 23 by thermal oxidation. A dry film resist is applied to the front and back surfaces of the silicon substrate 21 in which the through-holes 23 are formed under pressure and heating conditions, and resist patterns of deflection electrodes, wirings, and shield electrodes are formed by exposure and development. On top of this, the surface of the silicon substrate 21 was activated by Ar plasma, and Ti: 0.1 μm and Au: 1 μm were laminated from the front and back surfaces of the silicon substrate 21 by sputtering. Here, Ti is used as an adhesion film with SiO _2, and Au is used as a low resistance film. After removing the resist pattern 36, Au: 1.5 μm was laminated by electroless Au plating to produce a blanker array.
(Example 2)
A specific process of the device for a multi-electron beam drawing apparatus according to the embodiment of the present invention will be described by way of example as Example 2.

A through-hole 23 having an aspect ratio of 10 was formed by forming a mask for the through-hole 23 on the silicon substrate 21 and performing reactive ion etching of silicon. After removing the mask, a thermal oxide film (SiO ₂ ) of 1.5 μm was laminated on the surface of the silicon substrate 21 and the through hole 23 by thermal oxidation. A dry film resist is applied to the front and back surfaces of the silicon substrate 21 in which the through-holes 23 are formed under pressure and heating conditions, and resist patterns of deflection electrodes, wirings, and shield electrodes are formed by exposure and development. On top of that, the surface of the silicon substrate 21 was activated by Ar plasma, and Cr: 0.1 μm, Cu: 1 μm, and Pd: 0.2 μm were laminated from the front and back surfaces of the silicon substrate 21 by sputtering. Here, Cr is used as an adhesion film with SiO ₂ , Cu is used as a low resistance film, and Pd is used as a diffusion prevention film. After removing the resist pattern 36, Au: 1.5 μm was laminated by electroless Au plating to produce a blanker array.

It is a block diagram of the multi electron beam drawing apparatus using the device manufactured by the manufacturing method of one Embodiment of this invention. It is the schematic of the blanker which comprises the blanker array of FIG. It is a cross-sectional view of the through-hole part of the blanker of FIG. It is process drawing of the manufacturing method of the blanker shown by the AA longitudinal cross-section of FIG. It is process drawing of the manufacturing method of the blanker shown by the BB vertical cross section of FIG. It is a partial process figure of the manufacturing method of the blanker shown by CC cross section of FIG. It is a figure which shows the modification of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 21 ... Silicon substrate, 22 ... Insulating film, 23 ... Through-hole, 24 ... Deflection electrode, 25 ... Wiring, 26 ... Shield electrode, 37 ... Resist, 38 ... Resist pattern, 101 ... Electron gun, 102 ... Electron beam, 103 ... Condenser lens 104 ... Aperture array 105 ... Lens array 106 ... Separated electron beam 107 ... Blanker array 108 ... Blanking stop 109 ... Intermediate image 110 ... First projection lens (molded lens) 111 ... Moving point focus corrector, 112 ... Moving point astigmatism corrector, 113 ... Main deflector, 114 ... Second projection lens (reduction lens), 115 ... Sub deflector, 116 ... Electron detector, 117 ... Sample, 118 ... Sample stage, 119 ... Faraday cup array, 120 ... Focus control circuit, 121 ... Irradiation amount control circuit, 122 ... Lens control circuit, 123: Deflection control circuit, 124 ... Electron detector control circuit, 125 ... Stage control circuit, 126 ... CPU.

Claims (11)

Forming a number of through holes having an aspect ratio of 4 or more in a silicon substrate;
Forming an insulating film on the surface of the silicon substrate and the side wall surface of the through hole;
Forming a resist on the entire surface of the surface of the silicon substrate formed of the insulating film and the through holes;
Exposing and developing the resist to form a resist pattern for forming a deflection electrode on the opposite side wall surface of the through-hole and a wiring on the surface of the silicon substrate; and
Forming a deflection electrode metal film on a side wall surface of the through hole using the resist pattern and forming a wiring metal film extending from the deflection electrode metal film to a surface of the silicon substrate;
Removing the resist pattern;
A step of further plating a metal film on the deflection electrode metal film and the wiring metal film to form a deflection electrode and a wiring;
A method for manufacturing a device for a multi-electron beam lithography apparatus, comprising:   2. The method of manufacturing a device for a multi-electron beam drawing apparatus according to claim 1, wherein a resist is formed on the entire surface of the silicon substrate and the inside of the through hole using a dry film resist.   3. The multi-electron beam according to claim 2, wherein a dry film resist is applied from both sides of the silicon substrate under pressure and heating conditions to form a resist on the surface of the silicon substrate and the entire interior of the through hole. Manufacturing method of device for drawing apparatus.   4. The method of manufacturing a device for a multi-electron beam drawing apparatus according to claim 3, wherein the heating temperature of the dry film resist is set to a temperature near the softening point of the resist material.   2. The method of manufacturing a device for a multi-electron beam lithography apparatus according to claim 1, wherein the metal film is formed using the resist pattern by sputtering or vapor deposition.   6. The method of manufacturing a device for a multi-electron beam lithography apparatus according to claim 5, wherein the metal film is laminated from both sides of the silicon substrate by sputtering or vapor deposition.   6. The method of manufacturing a device for a multi-electron beam lithography apparatus according to claim 5, wherein the formation of the metal film using the resist pattern is performed by laminating an adhesion film, a low resistance film, and an antioxidant film in this order.   2. The method of manufacturing a device for a multi-electron beam drawing apparatus according to claim 1, wherein the metal film is plated by an electroless plating method. Forming a number of through holes having an aspect ratio of 4 or more in a silicon substrate;
Forming an insulating film on the surface of the silicon substrate and the side wall surface of the through hole;
Forming a resist on the entire surface of the surface of the silicon substrate formed of the insulating film and the through holes;
A resist for exposing and developing the resist to form a deflection electrode on the opposite side wall surface of the through hole, a shield electrode on the opposite side wall surface excluding the side wall surface, and a wiring on the surface of the silicon substrate. Forming a pattern;
Using the resist pattern, a deflection electrode metal film and a shield electrode metal film are formed on the side wall surface of the through hole, and a wiring metal film extending from the deflection electrode metal film to the surface of the silicon substrate is formed. Process,
Removing the resist pattern;
A step of plating a metal film on the deflection electrode metal film, the shield electrode metal film, and the wiring metal film to form a deflection electrode, a shield electrode, and a wiring;
A method for manufacturing a device for a multi-electron beam lithography apparatus, comprising:   10. The resist pattern according to claim 9, wherein a resist is left at a corner portion where a side wall surface of the through hole for forming a deflection electrode and a side wall surface of the through hole for forming a shield electrode are crossed. A method for manufacturing a device for a multi-electron beam drawing apparatus. The method of manufacturing a device for a multi-electron beam lithography apparatus according to claim 9, wherein the metal film is formed using the resist pattern by sputtering or vapor deposition.

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