JP2012099801A5 - Photoelectric conversion device - Google Patents
Photoelectric conversion device Download PDFInfo
- Publication number
- JP2012099801A5 JP2012099801A5 JP2011221733A JP2011221733A JP2012099801A5 JP 2012099801 A5 JP2012099801 A5 JP 2012099801A5 JP 2011221733 A JP2011221733 A JP 2011221733A JP 2011221733 A JP2011221733 A JP 2011221733A JP 2012099801 A5 JP2012099801 A5 JP 2012099801A5
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- JP
- Japan
- Prior art keywords
- transistor
- electrically connected
- photodiode
- power supply
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 title claims 6
- 239000004065 semiconductor Substances 0.000 claims 1
Claims (5)
前記フォトダイオードのアノードは、前記第１のトランジスタのソース又はドレインの一方と電気的に接続され、The anode of the photodiode is electrically connected to one of the source and the drain of the first transistor,
前記フォトダイオードのアノードは、前記第１のトランジスタのゲートと電気的に接続され、The anode of the photodiode is electrically connected to the gate of the first transistor,
前記フォトダイオードのアノードは、前記複数の第２のトランジスタのゲートと電気的に接続され、The anode of the photodiode is electrically connected to the gates of the plurality of second transistors,
前記フォトダイオードのアノードは、前記第３のトランジスタのソース又はドレインの一方と電気的に接続され、The anode of the photodiode is electrically connected to one of the source and the drain of the third transistor,
前記フォトダイオードのアノードは、前記第３のトランジスタのゲートと電気的に接続され、The anode of the photodiode is electrically connected to the gate of the third transistor,
前記フォトダイオードのカソードは、前記複数の第２のトランジスタのソース又はドレインの一方と電気的に接続され、The cathode of the photodiode is electrically connected to one of the source and the drain of the plurality of second transistors,
前記フォトダイオードのカソードは、前記第３のトランジスタのソース又はドレインの他方と電気的に接続され、The cathode of the photodiode is electrically connected to the other of the source and the drain of the third transistor,
前記第１のトランジスタのソース又はドレインの他方は、前記複数の第２のトランジスタのソース又はドレインの他方と電気的に接続されていることを特徴とする光電変換装置。A photoelectric conversion device, wherein the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the plurality of second transistors.
前記フォトダイオードのカソードは、第１の電源電位と第２の電源電位とを選択する回路に電気的に接続され、The cathode of the photodiode is electrically connected to a circuit that selects a first power supply potential and a second power supply potential,
前記第１のトランジスタのソース又はドレインの他方は、第３の電源電位を伝達する配線に電気的に接続され、The other of the source and the drain of the first transistor is electrically connected to a wire transmitting a third power supply potential,
前記第１の電源電位は、前記第２の電源電位よりも高く、The first power supply potential is higher than the second power supply potential,
前記第２の電源電位は、接地電位であり、The second power supply potential is a ground potential,
前記第３の電源電位は、前記第１の電源電位よりも低いことを特徴とする光電変換装置。The photoelectric conversion device characterized in that the third power supply potential is lower than the first power supply potential.
前記第３のトランジスタは酸化物半導体を有することを特徴とする光電変換装置。The photoelectric conversion device, wherein the third transistor includes an oxide semiconductor.
前記第３のトランジスタのゲート幅は、前記第１のトランジスタのゲート幅よりも大きいことを特徴とする光電変換装置。The photoelectric conversion device, wherein a gate width of the third transistor is larger than a gate width of the first transistor.
前記第３のトランジスタのゲート長は、前記第１のトランジスタのゲート長よりも小さいことを特徴とする光電変換装置。The photoelectric conversion device, wherein a gate length of the third transistor is smaller than a gate length of the first transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011221733A JP5744693B2 (en) | 2010-10-08 | 2011-10-06 | Photoelectric conversion device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010228046 | 2010-10-08 | ||
| JP2010228046 | 2010-10-08 | ||
| JP2011221733A JP5744693B2 (en) | 2010-10-08 | 2011-10-06 | Photoelectric conversion device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012099801A JP2012099801A (en) | 2012-05-24 |
| JP2012099801A5 true JP2012099801A5 (en) | 2014-08-28 |
| JP5744693B2 JP5744693B2 (en) | 2015-07-08 |
Family
ID=45924387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011221733A Expired - Fee Related JP5744693B2 (en) | 2010-10-08 | 2011-10-06 | Photoelectric conversion device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8716646B2 (en) |
| JP (1) | JP5744693B2 (en) |
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| US9881954B2 (en) * | 2014-06-11 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
| US20170186782A1 (en) * | 2015-12-24 | 2017-06-29 | Innolux Corporation | Pixel circuit of active-matrix light-emitting diode and display panel having the same |
| US10685983B2 (en) | 2016-11-11 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| CN108809284B (en) * | 2017-10-27 | 2022-02-01 | 苏州捷芯威半导体有限公司 | Integrated power switch device and electronic equipment |
| JP7039346B2 (en) * | 2018-03-20 | 2022-03-22 | 株式会社ジャパンディスプレイ | Optical sensor circuit, optical sensor device, and display device |
| WO2020033930A2 (en) | 2018-08-10 | 2020-02-13 | Obsidian Sensors, Inc. | Mems sensors and systems |
| JP7274284B2 (en) * | 2018-12-21 | 2023-05-16 | 株式会社ジャパンディスプレイ | detector |
| WO2020149842A1 (en) * | 2019-01-16 | 2020-07-23 | The Regents Of The University Of Michigan | Photodetectors with semiconductor active layers for under-display fingerprint and gesture sensors |
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2011
- 2011-10-04 US US13/252,226 patent/US8716646B2/en not_active Expired - Fee Related
- 2011-10-06 JP JP2011221733A patent/JP5744693B2/en not_active Expired - Fee Related
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