GB8619843D0 - Semiconductor - Google Patents

Semiconductor

Info

Publication number: GB8619843D0
Authority: GB; United Kingdom
Prior art keywords: semiconductor
Prior art date: 1985-09-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

GB868619843A

Other versions

GB2181890B (en

GB2181890A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SRL

Original Assignee

SGS Microelettronica SpA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-09-26

Filing date

1986-08-14

Publication date

1986-09-24

1986-08-14 Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA

1986-09-24 Publication of GB8619843D0 publication Critical patent/GB8619843D0/en

1987-04-29 Publication of GB2181890A publication Critical patent/GB2181890A/en

1989-02-08 Application granted granted Critical

1989-02-08 Publication of GB2181890B publication Critical patent/GB2181890B/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]

GB08619843A 1985-09-26 1986-08-14 Semiconductor power device Expired GB2181890B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT06614/85A IT1202313B (en)	1985-09-26	1985-09-26	SEMICONDUCTOR POWER DEVICE, NORMALLY INTERDICTED FOR HIGH VOLTAGES AND WITH MODULATED RON

Publications (3)

Publication Number	Publication Date
GB8619843D0 true GB8619843D0 (en)	1986-09-24
GB2181890A GB2181890A (en)	1987-04-29
GB2181890B GB2181890B (en)	1989-02-08

Family

ID=11121438

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08619843A Expired GB2181890B (en)	1985-09-26	1986-08-14	Semiconductor power device

Country Status (4)

Country	Link
DE (1)	DE3632642C2 (en)
FR (1)	FR2587842B1 (en)
GB (1)	GB2181890B (en)
IT (1)	IT1202313B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2230136B (en) *	1989-03-28	1993-02-10	Matsushita Electric Works Ltd	Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby
US5010025A (en) *	1989-04-03	1991-04-23	Grumman Aerospace Corporation	Method of making trench JFET integrated circuit elements
DE19648041B4 (en) *	1996-11-20	2010-07-15	Robert Bosch Gmbh	Integrated vertical semiconductor device
GB2622086A (en) *	2022-09-02	2024-03-06	Search For The Next Ltd	A novel transistor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5598872A (en) *	1979-01-22	1980-07-28	Semiconductor Res Found	Semiconductor device
JPS5598871A (en) *	1979-01-22	1980-07-28	Semiconductor Res Found	Static induction transistor

1985
- 1985-09-26 IT IT06614/85A patent/IT1202313B/en active
1986
- 1986-08-14 GB GB08619843A patent/GB2181890B/en not_active Expired
- 1986-09-19 FR FR868613117A patent/FR2587842B1/en not_active Expired - Lifetime
- 1986-09-25 DE DE3632642A patent/DE3632642C2/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
IT1202313B (en)	1989-02-02
FR2587842B1 (en)	1992-02-21
DE3632642C2 (en)	1998-08-13
IT8506614A0 (en)	1985-09-26
GB2181890B (en)	1989-02-08
GB2181890A (en)	1987-04-29
DE3632642A1 (en)	1987-03-26
FR2587842A1 (en)	1987-03-27

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Legal Events

Date	Code	Title	Description
2002-04-03	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20010814