FR2977073B1 - Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement - Google Patents
Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinementInfo
- Publication number
- FR2977073B1 FR2977073B1 FR1155577A FR1155577A FR2977073B1 FR 2977073 B1 FR2977073 B1 FR 2977073B1 FR 1155577 A FR1155577 A FR 1155577A FR 1155577 A FR1155577 A FR 1155577A FR 2977073 B1 FR2977073 B1 FR 2977073B1
- Authority
- FR
- France
- Prior art keywords
- transferring
- substrate
- semiconductor layer
- containment structure
- containment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1155577A FR2977073B1 (fr) | 2011-06-23 | 2011-06-23 | Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement |
| PCT/EP2012/061848 WO2012175561A1 (fr) | 2011-06-23 | 2012-06-20 | Procédé de transfert d'une couche de semi-conducteur et substrat comprenant une structure de confinement |
| US14/127,926 US9716029B2 (en) | 2011-06-23 | 2012-06-20 | Method for transferring a layer of a semiconductor and substrate comprising a confinement structure |
| TW101122492A TWI630642B (zh) | 2011-06-23 | 2012-06-22 | 用以移轉半導體層之方法與包含限制結構之基體 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1155577A FR2977073B1 (fr) | 2011-06-23 | 2011-06-23 | Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2977073A1 FR2977073A1 (fr) | 2012-12-28 |
| FR2977073B1 true FR2977073B1 (fr) | 2014-02-07 |
Family
ID=46321017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1155577A Active FR2977073B1 (fr) | 2011-06-23 | 2011-06-23 | Procede de transfert d'une couche de semi-conducteur, et substrat comprenant une structure de confinement |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9716029B2 (fr) |
| FR (1) | FR2977073B1 (fr) |
| TW (1) | TWI630642B (fr) |
| WO (1) | WO2012175561A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2995447B1 (fr) | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | Procede de separation d'au moins deux substrats selon une interface choisie |
| JP6511516B2 (ja) * | 2014-05-23 | 2019-05-15 | マサチューセッツ インスティテュート オブ テクノロジー | ゲルマニウム・オン・インシュレータ基板の製造方法 |
| FR3077923B1 (fr) * | 2018-02-12 | 2021-07-16 | Soitec Silicon On Insulator | Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche |
| FR3099637B1 (fr) | 2019-08-01 | 2021-07-09 | Soitec Silicon On Insulator | procédé de fabrication d’unE structure composite comprenant une couche mince en Sic monocristallin sur un substrat support en sic polycristallin |
| KR102250895B1 (ko) * | 2019-12-23 | 2021-05-12 | 주식회사 현대케피코 | 반도체 소자의 제조방법 |
| FR3144390A1 (fr) * | 2022-12-27 | 2024-06-28 | Commissariat A L' Energie Atomique Et Aux Energies Alternatives | Procédé de transfert de couche semiconductrice |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998059365A1 (fr) | 1997-06-24 | 1998-12-30 | Massachusetts Institute Of Technology | REGULATION DES DENSITES DE DISLOCATION FILETEES DANS DES DISPOSITIFS GERMANIUM SUR SILICIUM AU MOYEN DE COUCHES A TENEUR ECHELONNEE EN GeSi ET D'UNE PLANARISATION |
| US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
| US6649492B2 (en) * | 2002-02-11 | 2003-11-18 | International Business Machines Corporation | Strained Si based layer made by UHV-CVD, and devices therein |
| US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US6953736B2 (en) * | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
| WO2004021420A2 (fr) * | 2002-08-29 | 2004-03-11 | Massachusetts Institute Of Technology | Systeme de fabrication ameliore et procede pour semi-conducteur monocristallin sur un substrat |
| US7202124B2 (en) * | 2004-10-01 | 2007-04-10 | Massachusetts Institute Of Technology | Strained gettering layers for semiconductor processes |
| US10374120B2 (en) * | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
| TW200707799A (en) * | 2005-04-21 | 2007-02-16 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
| JP2009532918A (ja) * | 2006-04-05 | 2009-09-10 | シリコン ジェネシス コーポレーション | レイヤトランスファプロセスを使用する太陽電池の製造方法および構造 |
| EP2333824B1 (fr) * | 2009-12-11 | 2014-04-16 | Soitec | Fabrication de dispositifs SOI mince |
| US8163581B1 (en) * | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
| US8196546B1 (en) * | 2010-11-19 | 2012-06-12 | Corning Incorporated | Semiconductor structure made using improved multiple ion implantation process |
-
2011
- 2011-06-23 FR FR1155577A patent/FR2977073B1/fr active Active
-
2012
- 2012-06-20 US US14/127,926 patent/US9716029B2/en active Active
- 2012-06-20 WO PCT/EP2012/061848 patent/WO2012175561A1/fr active Application Filing
- 2012-06-22 TW TW101122492A patent/TWI630642B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2977073A1 (fr) | 2012-12-28 |
| TWI630642B (zh) | 2018-07-21 |
| US20140183601A1 (en) | 2014-07-03 |
| WO2012175561A1 (fr) | 2012-12-27 |
| TW201308397A (zh) | 2013-02-16 |
| US9716029B2 (en) | 2017-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20130109 |
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