FR2704094B1 - Monolithic diode network. - Google Patents

Monolithic diode network.

Info

Publication number: FR2704094B1
Authority: FR; France
Prior art keywords: diode network; monolithic diode; monolithic; network; diode
Prior art date: 1993-04-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

FR9304586A

Other languages

French (fr)

Other versions

FR2704094A1 (en

Inventor

Pezzani Robert

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics SA

STMicroelectronics lnc USA

Original Assignee

SGS Thomson Microelectronics SA

SGS Thomson Microelectronics Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-04-13

Filing date

1993-04-13

Publication date

1995-07-07

1993-04-13 Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA

1993-04-13 Priority to FR9304586A priority Critical patent/FR2704094B1/en

1994-03-22 Priority to US08/216,585 priority patent/US5559361A/en

1994-04-11 Priority to DE69412327T priority patent/DE69412327T2/en

1994-04-11 Priority to JP09545694A priority patent/JP3785644B2/en

1994-04-11 Priority to EP94410026A priority patent/EP0620596B1/en

1994-10-21 Publication of FR2704094A1 publication Critical patent/FR2704094A1/en

1995-06-07 Priority to US08/479,953 priority patent/US5631181A/en

1995-07-07 Application granted granted Critical

1995-07-07 Publication of FR2704094B1 publication Critical patent/FR2704094B1/en

2013-04-13 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Semiconductor Integrated Circuits (AREA)

FR9304586A 1993-04-13 1993-04-13 Monolithic diode network. Expired - Fee Related FR2704094B1 (en)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
FR9304586A FR2704094B1 (en)	1993-04-13	1993-04-13	Monolithic diode network.
US08/216,585 US5559361A (en)	1993-04-13	1994-03-22	Monolithic diode assay
DE69412327T DE69412327T2 (en)	1993-04-13	1994-04-11	Monolithic diode grid
JP09545694A JP3785644B2 (en)	1993-04-13	1994-04-11	Semiconductor element
EP94410026A EP0620596B1 (en)	1993-04-13	1994-04-11	Monolithic diode grid
US08/479,953 US5631181A (en)	1993-04-13	1995-06-07	Method of making a monolithic diode array

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9304586A FR2704094B1 (en)	1993-04-13	1993-04-13	Monolithic diode network.

Publications (2)

Publication Number	Publication Date
FR2704094A1 FR2704094A1 (en)	1994-10-21
FR2704094B1 true FR2704094B1 (en)	1995-07-07

Family

ID=9446200

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9304586A Expired - Fee Related FR2704094B1 (en)	1993-04-13	1993-04-13	Monolithic diode network.

Country Status (5)

Country	Link
US (2)	US5559361A (en)
EP (1)	EP0620596B1 (en)
JP (1)	JP3785644B2 (en)
DE (1)	DE69412327T2 (en)
FR (1)	FR2704094B1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5872386A (en) *	1995-07-17	1999-02-16	Sii R&D Center Inc.	Wafer layout of semiconductor device
FR2779292B1 (en) *	1998-05-27	2000-09-29	Sgs Thomson Microelectronics	ASSOCIATION OF DIODES IN SERIES
JP2002289879A (en)	2001-03-27	2002-10-04	Toshiba Corp	diode
US7442629B2 (en)	2004-09-24	2008-10-28	President & Fellows Of Harvard College	Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en)	2001-05-25	2006-06-06	President & Fellows Of Harvard College	Silicon-based visible and near-infrared optoelectric devices
US6797992B2 (en) *	2001-08-07	2004-09-28	Fabtech, Inc.	Apparatus and method for fabricating a high reverse voltage semiconductor device
US20050269695A1 (en) *	2004-06-07	2005-12-08	Brogle James J	Surface-mount chip-scale package
US8212327B2 (en) *	2008-03-06	2012-07-03	Sionyx, Inc.	High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
JP2010098189A (en) *	2008-10-17	2010-04-30	Toshiba Corp	Semiconductor device
US9911781B2 (en)	2009-09-17	2018-03-06	Sionyx, Llc	Photosensitive imaging devices and associated methods
US9673243B2 (en)	2009-09-17	2017-06-06	Sionyx, Llc	Photosensitive imaging devices and associated methods
US8692198B2 (en)	2010-04-21	2014-04-08	Sionyx, Inc.	Photosensitive imaging devices and associated methods
WO2011160130A2 (en)	2010-06-18	2011-12-22	Sionyx, Inc	High speed photosensitive devices and associated methods
US9496308B2 (en)	2011-06-09	2016-11-15	Sionyx, Llc	Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en)	2011-07-13	2013-01-17	Sionyx, Inc.	Biometric imaging devices and associated methods
US9064764B2 (en)	2012-03-22	2015-06-23	Sionyx, Inc.	Pixel isolation elements, devices, and associated methods
WO2014127376A2 (en)	2013-02-15	2014-08-21	Sionyx, Inc.	High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en)	2013-03-15	2018-04-10	Sionyx, Llc	Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en)	2013-06-29	2015-12-08	Sionyx, Inc.	Shallow trench textured regions and associated methods

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1108778A (en) *	1965-09-13	1968-04-03	Associated Semiconductor Mft	Improvements in and relating to methods of manufacturing semiconductor devices
US3913216A (en) *	1973-06-20	1975-10-21	Signetics Corp	Method for fabricating a precision aligned semiconductor array
DE3435751A1 (en) *	1984-09-28	1986-04-10	Siemens AG, 1000 Berlin und 8000 München	Integrated semiconductor circuit in complementary circuit logic having an overvoltage protector structure
FR2623663B1 (en) *	1987-11-24	1990-04-13	Sgs Thomson Microelectronics	MONOLITHIC ASSEMBLY OF PROTECTION DIODES AND PROTECTION SYSTEMS
JP2513010B2 (en) *	1988-12-27	1996-07-03	日本電気株式会社	Input protection device for semiconductor integrated circuit
US5278101A (en) *	1989-06-28	1994-01-11	Kabushiki Kaisha Toshiba	Semiconductor device and method for manufacturing the same
JPH03124056A (en) *	1989-10-06	1991-05-27	Fujitsu Ltd	protection element
FR2687009B1 (en) *	1992-01-31	1994-04-29	Sgs Thomson Microelectronics	PROTECTIVE COMPONENT FOR AUTOMOTIVE CIRCUIT.
FR2689317B1 (en) *	1992-03-26	1994-06-17	Sgs Thomson Microelectronics	INTEGRATED CIRCUIT CONSTITUTING A NETWORK OF PROTECTION DIODES.

1993
- 1993-04-13 FR FR9304586A patent/FR2704094B1/en not_active Expired - Fee Related
1994
- 1994-03-22 US US08/216,585 patent/US5559361A/en not_active Expired - Lifetime
- 1994-04-11 JP JP09545694A patent/JP3785644B2/en not_active Expired - Fee Related
- 1994-04-11 DE DE69412327T patent/DE69412327T2/en not_active Expired - Fee Related
- 1994-04-11 EP EP94410026A patent/EP0620596B1/en not_active Expired - Lifetime
1995
- 1995-06-07 US US08/479,953 patent/US5631181A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5631181A (en)	1997-05-20
EP0620596A1 (en)	1994-10-19
DE69412327T2 (en)	1998-12-24
DE69412327D1 (en)	1998-09-17
FR2704094A1 (en)	1994-10-21
JPH0799327A (en)	1995-04-11
EP0620596B1 (en)	1998-08-12
JP3785644B2 (en)	2006-06-14
US5559361A (en)	1996-09-24

Legal Events

Date	Code	Title	Description
2004-01-30	ST	Notification of lapse

Publication	Publication Date	Title
FR2704094B1 (en)	1995-07-07	Monolithic diode network.
DE69710002D1 (en)	2002-03-14	Intelligent laser diode arrangement
DE69104661D1 (en)	1994-11-24	Laser diode arrangement.
NL194314B (en)	2001-08-01	Photoelectric conversion system.
FR2695774B1 (en)	1994-10-28	Telecommunications network.
DE69217360D1 (en)	1997-03-20	Laser diodes
MX9204649A (en)	1993-02-01	NETWORK MANAGEMENT CONTROL.
FR2674309B1 (en)	1993-06-18	IMPROVED CLAW CONNECTION.
DE69204327D1 (en)	1995-10-05	Laser diode array.
DE59611062D1 (en)	2004-09-23	RECTIFIER DIODE
NL194019B (en)	2000-12-01	Photoelectric conversion system.
FI924405A0 (en)	1992-09-30	LHRH antagonists.
FR2683947B1 (en)	1994-02-18	LOW VOLTAGE LOW VOLTAGE MONOLITHIC PROTECTION DIODE.
DE69204319D1 (en)	1995-10-05	Glass-aluminum nitride composite.
FI935497A0 (en)	1993-12-08	Saekerhetsventil Foer hoegtryckspumpar, hoegtryckvattenstraolemaskiner e.d.
DE59409896D1 (en)	2001-11-08	RECTIFIER DIODE
DE69324457D1 (en)	1999-05-20	Output scanning system with multi-beam laser diodes
FR2689317B1 (en)	1994-06-17	INTEGRATED CIRCUIT CONSTITUTING A NETWORK OF PROTECTION DIODES.
EP0661784A3 (en)	1995-12-27	Semiconductor laser diode.
DE69205399D1 (en)	1995-11-16	Voltage-deformed quantum well laser diode.
DE69107845D1 (en)	1995-04-06	Laser diode structure.
MX9204536A (en)	1993-02-01	INSECT NETWORK.
EP0610893A3 (en)	1994-11-02	Laser diode.
DE59202955D1 (en)	1995-08-24	Power diode.
DE3689705D1 (en)	1994-04-14	Zener diode.