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FR2021972B1 - - Google Patents

Info

Publication number
FR2021972B1
FR2021972B1 FR696932114A FR6932114A FR2021972B1 FR 2021972 B1 FR2021972 B1 FR 2021972B1 FR 696932114 A FR696932114 A FR 696932114A FR 6932114 A FR6932114 A FR 6932114A FR 2021972 B1 FR2021972 B1 FR 2021972B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR696932114A
Other versions
FR2021972A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2021972A1 publication Critical patent/FR2021972A1/fr
Application granted granted Critical
Publication of FR2021972B1 publication Critical patent/FR2021972B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
FR696932114A 1968-10-31 1969-09-22 Expired FR2021972B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77219168A 1968-10-31 1968-10-31

Publications (2)

Publication Number Publication Date
FR2021972A1 FR2021972A1 (fr) 1970-07-24
FR2021972B1 true FR2021972B1 (fr) 1974-02-22

Family

ID=25094251

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696932114A Expired FR2021972B1 (fr) 1968-10-31 1969-09-22

Country Status (4)

Country Link
US (1) US3519897A (fr)
DE (1) DE1954639C2 (fr)
FR (1) FR2021972B1 (fr)
GB (1) GB1273826A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
US5126814A (en) * 1986-12-09 1992-06-30 Tokyo, Japan Canon Kabushiki Kaisha Photoelectric converter with doped capacitor region
EP1024538A1 (fr) * 1999-01-29 2000-08-02 STMicroelectronics S.r.l. MOS varactor, particulièrement pour emetteurs-récepteurs

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
BE636316A (fr) * 1962-08-23 1900-01-01
US3400383A (en) * 1964-08-05 1968-09-03 Texas Instruments Inc Trainable decision system and adaptive memory element
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
US3428875A (en) * 1966-10-03 1969-02-18 Fairchild Camera Instr Co Variable threshold insulated gate field effect device

Also Published As

Publication number Publication date
US3519897A (en) 1970-07-07
GB1273826A (en) 1972-05-10
FR2021972A1 (fr) 1970-07-24
DE1954639C2 (de) 1984-01-26
DE1954639A1 (de) 1970-09-03

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Legal Events

Date Code Title Description
ST Notification of lapse
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