EP1179851A4 - SEMICONDUCTOR DEVICE - Google Patents

SEMICONDUCTOR DEVICE

Info

Publication number: EP1179851A4
Authority: EP; European Patent Office
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1999-04-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP00917308A

Other languages

German (de)

French (fr)

Other versions

EP1179851B1 (en

EP1179851A1 (en

Inventor

Masaharu Muramatsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-04-13

Filing date

2000-04-13

Publication date

2004-04-21

2000-04-13 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

2002-02-13 Publication of EP1179851A1 publication Critical patent/EP1179851A1/en

2004-04-21 Publication of EP1179851A4 publication Critical patent/EP1179851A4/en

2007-07-18 Application granted granted Critical

2007-07-18 Publication of EP1179851B1 publication Critical patent/EP1179851B1/en

2020-04-13 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/159—Charge-coupled device [CCD] image sensors comprising a photoconductive layer deposited on the CCD structure
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes

EP00917308A 1999-04-13 2000-04-13 Semiconductor device Expired - Lifetime EP1179851B1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP10544299		1999-04-13
JP10544299		1999-04-13
PCT/JP2000/002424 WO2000062344A1 (en)	1999-04-13	2000-04-13	Semiconductor device

Publications (3)

Publication Number	Publication Date
EP1179851A1 EP1179851A1 (en)	2002-02-13
EP1179851A4 true EP1179851A4 (en)	2004-04-21
EP1179851B1 EP1179851B1 (en)	2007-07-18

Family

ID=14407722

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP00917308A Expired - Lifetime EP1179851B1 (en)	1999-04-13	2000-04-13	Semiconductor device

Country Status (6)

Country	Link
US (1)	US6872992B2 (en)
EP (1)	EP1179851B1 (en)
JP (1)	JP4786035B2 (en)
AU (1)	AU3837200A (en)
DE (1)	DE60035580T2 (en)
WO (1)	WO2000062344A1 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004134578A (en)	2002-10-10	2004-04-30	Hamamatsu Photonics Kk	Photodetector and method of manufacturing the same
US20060055800A1 (en) *	2002-12-18	2006-03-16	Noble Device Technologies Corp.	Adaptive solid state image sensor
JP4494746B2 (en) *	2003-09-25	2010-06-30	浜松ホトニクス株式会社	Semiconductor device
JP4494745B2 (en) *	2003-09-25	2010-06-30	浜松ホトニクス株式会社	Semiconductor device
JP4351012B2 (en) *	2003-09-25	2009-10-28	浜松ホトニクス株式会社	Semiconductor device
US20060019033A1 (en) *	2004-05-21	2006-01-26	Applied Materials, Inc.	Plasma treatment of hafnium-containing materials
GB0613165D0 (en)	2006-06-28	2006-08-09	Univ Warwick	Real-time infrared measurement and imaging system
JP4289377B2 (en) *	2006-08-21	2009-07-01	ソニー株式会社	Physical quantity detection device and imaging device
JP4644696B2 (en)	2007-05-30	2011-03-02	富士フイルム株式会社	Back-illuminated image sensor and manufacturing method thereof
JP2009175026A (en) *	2008-01-25	2009-08-06	Shimadzu Corp	Detector for ultraviolet-visible near infrared spectrophotometer
DE102008001675A1 (en) *	2008-05-09	2009-11-12	Robert Bosch Gmbh	Camera module with improved cooling concept
JP5074291B2 (en) *	2008-05-15	2012-11-14	浜松ホトニクス株式会社	Spectroscopic module
JP5185205B2 (en)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	Semiconductor photo detector
JP5185208B2 (en)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	Photodiode and photodiode array
JP5185207B2 (en)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	Photodiode array
JP5185206B2 (en)	2009-02-24	2013-04-17	浜松ホトニクス株式会社	Semiconductor photo detector
JP5208871B2 (en) *	2009-07-13	2013-06-12	浜松ホトニクス株式会社	Photodetector
US8772717B2 (en)	2009-08-10	2014-07-08	Drs Rsta, Inc.	Radiation detector having a bandgap engineered absorber
US8384559B2 (en) *	2010-04-13	2013-02-26	Silicon Laboratories Inc.	Sensor device with flexible interface and updatable information store
JP5486541B2 (en)	2011-03-31	2014-05-07	浜松ホトニクス株式会社	Photodiode array module and manufacturing method thereof
JP5486542B2 (en)	2011-03-31	2014-05-07	浜松ホトニクス株式会社	Photodiode array module and manufacturing method thereof
KR102237820B1 (en)	2014-05-14	2021-04-08	삼성전자주식회사	Lateral type photodiode, image sensor including the same and method of manufacturing the photodide and the image sensor
KR20190105337A (en) *	2018-03-05	2019-09-17	삼성전자주식회사	Memory device
CN110346313A (en) *	2019-07-31	2019-10-18	清华大学	A kind of light modulation micro-nano structure, micro- integrated spectrometer and spectral modulation method
WO2024090074A1 (en) *	2022-10-25	2024-05-02	浜松ホトニクス株式会社	Solid-state imaging device and method for manufacturing solid-state imaging device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0645574A (en) *	1992-07-22	1994-02-18	Hamamatsu Photonics Kk	Semiconductor energy detector
EP0820104A2 (en) *	1996-07-15	1998-01-21	HE HOLDINGS, INC. dba HUGHES ELECTRONICS	Low light level imager with extended wavelength response employing atomic bonded(fused) semiconductor materials
WO1998057376A1 (en) *	1997-06-11	1998-12-17	Massachusetts Institute Of Technology	Interconnection technique for hybrid integrated devices

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4422091A (en) *	1981-01-19	1983-12-20	Rockwell International Corporation	Backside illuminated imaging charge coupled device
US4656519A (en) *	1985-10-04	1987-04-07	Rca Corporation	Back-illuminated CCD imagers of interline transfer type
US4912545A (en) *	1987-09-16	1990-03-27	Irvine Sensors Corporation	Bonding of aligned conductive bumps on adjacent surfaces
JPH0222973A (en) *	1988-07-12	1990-01-25	Mitsubishi Electric Corp	Solid-state image pickup device
JPH0223782A (en) *	1988-07-12	1990-01-25	Mitsubishi Electric Corp	Solid-state image pickup device
JP2764964B2 (en) *	1988-11-29	1998-06-11	日本電気株式会社	Two-wavelength infrared light receiving device
US5070380A (en) *	1990-08-13	1991-12-03	Eastman Kodak Company	Transfer gate for photodiode to CCD image sensor
US5134274A (en) *	1991-03-18	1992-07-28	Hughes Aircraft Company	Two-sided solid-state imaging device
JPH05133796A (en) *	1991-11-15	1993-05-28	Mitsubishi Heavy Ind Ltd	Electric charge coupling element device for sensing plurality of wavelengths
US5227313A (en) *	1992-07-24	1993-07-13	Eastman Kodak Company	Process for making backside illuminated image sensors
US5512750A (en) *	1994-06-03	1996-04-30	Martin Marietta Corporation	A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout
US5652150A (en) *	1995-06-07	1997-07-29	Texas Instruments Incorporated	Hybrid CCD imaging
JPH09304182A (en) *	1996-05-20	1997-11-28	Satake Eng Co Ltd	Grain color selector
US5808350A (en) *	1997-01-03	1998-09-15	Raytheon Company	Integrated IR, visible and NIR sensor and methods of fabricating same
JP3957806B2 (en) *	1997-03-12	2007-08-15	富士フイルム株式会社	Peltier cooling device
JP4809537B2 (en) *	2000-04-05	2011-11-09	富士フイルム株式会社	Imaging control apparatus and imaging control method
US6717151B2 (en) *	2000-07-10	2004-04-06	Canon Kabushiki Kaisha	Image pickup apparatus

2000
- 2000-04-13 JP JP2000611318A patent/JP4786035B2/en not_active Expired - Fee Related
- 2000-04-13 AU AU38372/00A patent/AU3837200A/en not_active Abandoned
- 2000-04-13 EP EP00917308A patent/EP1179851B1/en not_active Expired - Lifetime
- 2000-04-13 WO PCT/JP2000/002424 patent/WO2000062344A1/en active IP Right Grant
- 2000-04-13 DE DE60035580T patent/DE60035580T2/en not_active Expired - Lifetime
2001
- 2001-10-12 US US09/974,817 patent/US6872992B2/en not_active Expired - Lifetime

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0645574A (en) *	1992-07-22	1994-02-18	Hamamatsu Photonics Kk	Semiconductor energy detector
EP0820104A2 (en) *	1996-07-15	1998-01-21	HE HOLDINGS, INC. dba HUGHES ELECTRONICS	Low light level imager with extended wavelength response employing atomic bonded(fused) semiconductor materials
WO1998057376A1 (en) *	1997-06-11	1998-12-17	Massachusetts Institute Of Technology	Interconnection technique for hybrid integrated devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 266 (E - 1551) 20 May 1994 (1994-05-20) *
See also references of WO0062344A1 *

Also Published As

Publication number	Publication date
US6872992B2 (en)	2005-03-29
EP1179851B1 (en)	2007-07-18
JP4786035B2 (en)	2011-10-05
EP1179851A1 (en)	2002-02-13
DE60035580T2 (en)	2008-04-17
WO2000062344A1 (en)	2000-10-19
AU3837200A (en)	2000-11-14
US20020020859A1 (en)	2002-02-21
DE60035580D1 (en)	2007-08-30

Legal Events

Date	Code	Title	Description
2001-12-28	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
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2002-02-13	AX	Request for extension of the european patent	Free format text: AL;LT;LV;MK;RO;SI
2004-04-21	A4	Supplementary search report drawn up and despatched	Effective date: 20040305
2004-04-21	RIC1	Information provided on ipc code assigned before grant	Ipc: 7H 01L 27/148 B Ipc: 7H 01L 27/146 A
2004-05-12	RBV	Designated contracting states (corrected)	Designated state(s): DE FR GB
2006-12-20	17Q	First examination report despatched	Effective date: 20051221
2007-01-12	GRAP	Despatch of communication of intention to grant a patent	Free format text: ORIGINAL CODE: EPIDOSNIGR1
2007-05-25	GRAS	Grant fee paid	Free format text: ORIGINAL CODE: EPIDOSNIGR3
2007-06-15	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
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