+

AU2003238253A8 - Acid etching mixture having reduced water content - Google Patents

Acid etching mixture having reduced water content

Info

Publication number
AU2003238253A8
AU2003238253A8 AU2003238253A AU2003238253A AU2003238253A8 AU 2003238253 A8 AU2003238253 A8 AU 2003238253A8 AU 2003238253 A AU2003238253 A AU 2003238253A AU 2003238253 A AU2003238253 A AU 2003238253A AU 2003238253 A8 AU2003238253 A8 AU 2003238253A8
Authority
AU
Australia
Prior art keywords
water content
acid etching
reduced water
etching mixture
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003238253A
Other versions
AU2003238253A1 (en
Inventor
Michael A Dodd
Kurt-Uwe Zimmerman
John Mcfarland
Wolfgang Sievert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2003238253A8 publication Critical patent/AU2003238253A8/en
Publication of AU2003238253A1 publication Critical patent/AU2003238253A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02019Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
AU2003238253A 2002-06-18 2003-06-18 Acid etching mixture having reduced water content Abandoned AU2003238253A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/174,174 US20030230548A1 (en) 2002-06-18 2002-06-18 Acid etching mixture having reduced water content
US10/174,174 2002-06-18
PCT/US2003/019079 WO2003107400A2 (en) 2002-06-18 2003-06-18 Acid etching mixture having reduced water content

Publications (2)

Publication Number Publication Date
AU2003238253A8 true AU2003238253A8 (en) 2003-12-31
AU2003238253A1 AU2003238253A1 (en) 2003-12-31

Family

ID=29733511

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003238253A Abandoned AU2003238253A1 (en) 2002-06-18 2003-06-18 Acid etching mixture having reduced water content

Country Status (7)

Country Link
US (1) US20030230548A1 (en)
EP (1) EP1516356A2 (en)
JP (1) JP2005530045A (en)
KR (1) KR20050013143A (en)
CN (1) CN1679146A (en)
AU (1) AU2003238253A1 (en)
WO (1) WO2003107400A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067015B2 (en) * 2002-10-31 2006-06-27 Texas Instruments Incorporated Modified clean chemistry and megasonic nozzle for removing backside CMP slurries
JP2006100799A (en) * 2004-09-06 2006-04-13 Sumco Corp Method of manufacturing silicon wafer
JP4642001B2 (en) * 2006-10-24 2011-03-02 関東化学株式会社 Composition for removing photoresist residue and polymer residue
DE102007004060B4 (en) * 2007-01-22 2013-03-21 Gp Solar Gmbh Use of an etching solution comprising water, nitric acid and sulfuric acid and etching process
TWI358467B (en) * 2007-12-07 2012-02-21 Nanya Technology Corp Etchant for metal alloy having hafnium and molybde
DE102007061687B4 (en) 2007-12-19 2010-04-29 Cpi Chemiepark Institut Gmbh Process for the matt etching of silicon substrates and etching mixture for carrying out the method
DE102009007136A1 (en) * 2009-02-02 2010-08-12 Sovello Ag Etching mixture for producing a structured surface on silicon substrates
CN102656250B (en) * 2009-09-21 2015-02-25 巴斯夫欧洲公司 Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
CN102534620A (en) * 2010-12-08 2012-07-04 无锡华润上华科技有限公司 Wet-process silicon etching solution for P-type wafer
SG192574A1 (en) * 2011-03-11 2013-09-30 Fujifilm Electronic Materials Novel etching composition
US8894877B2 (en) 2011-10-19 2014-11-25 Lam Research Ag Method, apparatus and composition for wet etching
US8986559B2 (en) * 2012-02-29 2015-03-24 Avantor Performance Materials, Inc. Compositions and methods for texturing polycrystalline silicon wafers
CN104624512A (en) * 2015-01-21 2015-05-20 江西久顺科技有限公司 Method for sorting P-type heavy-doped silicon material and N-type heavy-doped silicon material in dyeing manner
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
TWI538986B (en) * 2015-07-15 2016-06-21 綠能科技股份有限公司 Etching solution and method for roughening surface of germanium substrate
CN113299551B (en) * 2021-04-27 2023-05-02 南昌大学 Method for regulating and controlling semiconductor corrosion area

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1383662A (en) * 1964-03-05 1964-12-24 Bayer Ag Improved process for regenerating pickling baths containing hydrofluoric acid and sulfuric acid
JPS6092500A (en) * 1983-10-26 1985-05-24 Mitsubishi Heavy Ind Ltd Liquid composition for electropolishing niobium material and its preparation
DE3728693A1 (en) * 1987-08-27 1989-03-09 Wacker Chemitronic METHOD AND DEVICE FOR ETCHING SEMICONDUCTOR SURFACES
US5300463A (en) * 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
KR0124484B1 (en) * 1993-03-23 1997-12-10 모리시다 요이치 A method and apparatus for cleaning the semiconductor device
DE19805525C2 (en) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Process for wet-etching semiconductor wafers to produce a defined edge region by under-etching

Also Published As

Publication number Publication date
EP1516356A2 (en) 2005-03-23
WO2003107400A2 (en) 2003-12-24
US20030230548A1 (en) 2003-12-18
JP2005530045A (en) 2005-10-06
WO2003107400A3 (en) 2004-04-15
KR20050013143A (en) 2005-02-02
AU2003238253A1 (en) 2003-12-31
CN1679146A (en) 2005-10-05

Similar Documents

Publication Publication Date Title
AUPS159302A0 (en) Water skimmer
AU2003238253A8 (en) Acid etching mixture having reduced water content
TW543509U (en) Improved structure for water sprinkle-nozzle
AU2003287063A8 (en) Hemostatic and acid etch compositions containing sucralose
ZA200306327B (en) Purification of 2-nitro-4-methylsulphonylbenzoic acid.
AU2002357534A1 (en) Polycarboxylic acid mixture
IL157717A (en) Stabilized hypobromous acid solutions
PL376926A1 (en) Novel 2',5'-oligoadenylic acid analogues
PL366978A1 (en) Hydroxyfattysulfonic acid analogs
GB0230240D0 (en) Removal of an acid
GB0226445D0 (en) Water craft
AU2003202496A1 (en) Water purifier
AU2003240137A8 (en) Novel phosphonocarboxylic acid esters
TW543371U (en) Float
TW543368U (en) Float connector
GB0125819D0 (en) Improvements to flooring
IL162752A0 (en) Carboxylic acid compounds for use as surfactants
GB0207159D0 (en) Floating platforms
TW555237U (en) Improved structure for I/O connector
TW499859U (en) Improved structure of luminous buoy
TW549132U (en) Improved structure of linking-type kite
TW549133U (en) Improved structure of kite
TW482013U (en) Improved discharge structure for water drinker
TW551688U (en) Improved structure of connector
TW547856U (en) Improved structure of connector

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase
点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载