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AU2001238295A1 - A novel chromeless alternating reticle for producing semiconductor device features - Google Patents

A novel chromeless alternating reticle for producing semiconductor device features

Info

Publication number
AU2001238295A1
AU2001238295A1 AU2001238295A AU3829501A AU2001238295A1 AU 2001238295 A1 AU2001238295 A1 AU 2001238295A1 AU 2001238295 A AU2001238295 A AU 2001238295A AU 3829501 A AU3829501 A AU 3829501A AU 2001238295 A1 AU2001238295 A1 AU 2001238295A1
Authority
AU
Australia
Prior art keywords
reticle
novel
semiconductor device
device features
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238295A
Inventor
William Stanton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001238295A1 publication Critical patent/AU2001238295A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2001238295A 2000-02-22 2001-02-15 A novel chromeless alternating reticle for producing semiconductor device features Abandoned AU2001238295A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09510359 2000-02-22
US09/510,359 US6376130B1 (en) 2000-02-22 2000-02-22 Chromeless alternating reticle for producing semiconductor device features
PCT/US2001/004817 WO2001063864A2 (en) 2000-02-22 2001-02-15 Chromeless alternating phase-shift reticle for producing semiconductor device features

Publications (1)

Publication Number Publication Date
AU2001238295A1 true AU2001238295A1 (en) 2001-09-03

Family

ID=24030427

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001238295A Abandoned AU2001238295A1 (en) 2000-02-22 2001-02-15 A novel chromeless alternating reticle for producing semiconductor device features

Country Status (6)

Country Link
US (1) US6376130B1 (en)
JP (1) JP2003524201A (en)
KR (1) KR100549319B1 (en)
AU (1) AU2001238295A1 (en)
DE (1) DE10195745T5 (en)
WO (1) WO2001063864A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6566016B1 (en) * 2000-06-28 2003-05-20 Koninklijke Philips Electronics N.V. Apparatus and method for compensating critical dimension deviations across photomask
US20030157415A1 (en) * 2000-02-16 2003-08-21 Ziger David H. Apparatus and method for compensating critical dimension deviations across photomask
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6818910B2 (en) 2002-08-23 2004-11-16 Micron Technology, Inc. Writing methodology to reduce write time, and system for performing same
KR100480616B1 (en) * 2002-09-06 2005-03-31 삼성전자주식회사 Chromeless Photo mask and Method for manufacturing the same
US7135255B2 (en) * 2003-03-31 2006-11-14 International Business Machines Corporation Layout impact reduction with angled phase shapes
US7264415B2 (en) * 2004-03-11 2007-09-04 International Business Machines Corporation Methods of forming alternating phase shift masks having improved phase-shift tolerance
FR2869330B1 (en) * 2004-04-23 2006-07-21 Messier Bugatti Sa PROCESS FOR PRODUCING TWO-DIMENSIONAL HELICOIDAL FIBROUS TABLET
US7655388B2 (en) * 2005-01-03 2010-02-02 Chartered Semiconductor Manufacturing, Ltd. Mask and method to pattern chromeless phase lithography contact hole
KR100611112B1 (en) * 2005-01-20 2006-08-09 삼성전자주식회사 A single crystal structure and a method of forming the same, a semiconductor device comprising the single crystal structure and a method of manufacturing the same.
US7846643B1 (en) * 2007-11-02 2010-12-07 Western Digital (Fremont), Llc Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask
US20090311615A1 (en) * 2008-06-13 2009-12-17 Deming Tang Method of photolithographic patterning
WO2011048737A1 (en) * 2009-10-19 2011-04-28 パナソニック株式会社 Semiconductor device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049925A (en) 1990-04-20 1991-09-17 Micron Technology, Inc. Method and apparatus for focusing a wafer stepper
EP0464492B1 (en) 1990-06-21 1999-08-04 Matsushita Electronics Corporation A photomask used by photolithography and a process of producing the same
JPH05232681A (en) 1992-02-25 1993-09-10 Matsushita Electron Corp Mask for producing semiconductor device
KR0135729B1 (en) 1993-02-12 1998-04-24 Mitsubishi Electric Corp Attenuating type phase shifting mask and method of manufacturing thereof
US5322438A (en) 1993-06-18 1994-06-21 Silicon Systems, Inc. Layout scheme for precise capacitance ratios
US5487962A (en) 1994-05-11 1996-01-30 Rolfson; J. Brett Method of chromeless phase shift mask fabrication suitable for auto-cad layout
KR960005757A (en) 1994-07-30 1996-02-23 김광호 Projection exposure method, projection exposure apparatus and mask used therein
US5533634A (en) 1994-09-01 1996-07-09 United Microelectronics Corporation Quantum chromeless lithography
US5477058A (en) 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
JPH08152706A (en) 1994-11-30 1996-06-11 Fujitsu Ltd Phase shift mask manufacturing method and sputtering apparatus
KR0158904B1 (en) 1994-12-02 1999-02-01 김주용 Contact mask
US5635421A (en) 1995-06-15 1997-06-03 Taiwan Semiconductor Manufacturing Company Method of making a precision capacitor array
KR0179552B1 (en) * 1995-10-04 1999-04-01 김주용 Phase reversal mask for contact hole manufacturing
US5876878A (en) 1996-07-15 1999-03-02 Micron Technology, Inc. Phase shifting mask and process for forming comprising a phase shift layer for shifting two wavelengths of light
KR100201040B1 (en) 1996-08-26 1999-06-15 다니구찌 이찌로오; 기타오카 다카시 Phase shift mask and its manufacturing method
US5935736A (en) 1997-10-24 1999-08-10 Taiwan Semiconductors Manufacturing Company Ltd. Mask and method to eliminate side-lobe effects in attenuated phase shifting masks
TW363147B (en) 1997-11-22 1999-07-01 United Microelectronics Corp Phase shifting mask
US5925921A (en) 1998-02-13 1999-07-20 Microchip Technology Incorporated Geometrical layout technique for a circular capacitor within an array of matched capacitors on a semiconductor device

Also Published As

Publication number Publication date
DE10195745T5 (en) 2004-04-29
WO2001063864A2 (en) 2001-08-30
WO2001063864A3 (en) 2002-03-21
US6376130B1 (en) 2002-04-23
JP2003524201A (en) 2003-08-12
KR20020081345A (en) 2002-10-26
KR100549319B1 (en) 2006-02-02

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