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AU2001284993A1 - Thick oxide layer on bottom of trench structure in silicon - Google Patents

Thick oxide layer on bottom of trench structure in silicon

Info

Publication number
AU2001284993A1
AU2001284993A1 AU2001284993A AU8499301A AU2001284993A1 AU 2001284993 A1 AU2001284993 A1 AU 2001284993A1 AU 2001284993 A AU2001284993 A AU 2001284993A AU 8499301 A AU8499301 A AU 8499301A AU 2001284993 A1 AU2001284993 A1 AU 2001284993A1
Authority
AU
Australia
Prior art keywords
silicon
oxide layer
trench structure
thick oxide
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001284993A
Other languages
English (en)
Inventor
Henry W. Hurst
James J. Murphy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of AU2001284993A1 publication Critical patent/AU2001284993A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
AU2001284993A 2000-08-16 2001-08-15 Thick oxide layer on bottom of trench structure in silicon Abandoned AU2001284993A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/640,954 US6437386B1 (en) 2000-08-16 2000-08-16 Method for creating thick oxide on the bottom surface of a trench structure in silicon
US09640954 2000-08-16
PCT/US2001/025698 WO2002015280A1 (fr) 2000-08-16 2001-08-15 Couche d'oxyde epaisse au fond d'une structure de tranchee formee dans du silicium

Publications (1)

Publication Number Publication Date
AU2001284993A1 true AU2001284993A1 (en) 2002-02-25

Family

ID=24570347

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001284993A Abandoned AU2001284993A1 (en) 2000-08-16 2001-08-15 Thick oxide layer on bottom of trench structure in silicon

Country Status (6)

Country Link
US (2) US6437386B1 (fr)
JP (1) JP2004507092A (fr)
CN (1) CN100429785C (fr)
AU (1) AU2001284993A1 (fr)
DE (1) DE10196527B3 (fr)
WO (1) WO2002015280A1 (fr)

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TWI241012B (en) * 2004-06-25 2005-10-01 Mosel Vitelic Inc Method of manufacturing power device
US7402487B2 (en) * 2004-10-18 2008-07-22 Infineon Technologies Richmond, Lp Process for fabricating a semiconductor device having deep trench structures
US7382019B2 (en) * 2005-04-26 2008-06-03 Fairchild Semiconductor Corporation Trench gate FETs with reduced gate to drain charge
WO2006135746A2 (fr) 2005-06-10 2006-12-21 Fairchild Semiconductor Corporation Transistor à effet de champ à équilibrage de charge
US7648877B2 (en) * 2005-06-24 2010-01-19 Fairchild Semiconductor Corporation Structure and method for forming laterally extending dielectric layer in a trench-gate FET
TWI400757B (zh) * 2005-06-29 2013-07-01 Fairchild Semiconductor 形成遮蔽閘極場效應電晶體之方法
US7462550B2 (en) * 2005-10-24 2008-12-09 Semiconductor Components Industries, L.L.C. Method of forming a trench semiconductor device and structure therefor
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US8642441B1 (en) 2006-12-15 2014-02-04 Spansion Llc Self-aligned STI with single poly for manufacturing a flash memory device
US8497549B2 (en) * 2007-08-21 2013-07-30 Fairchild Semiconductor Corporation Method and structure for shielded gate trench FET
CN101452957B (zh) * 2007-11-30 2011-05-04 南亚科技股份有限公司 凹入式栅极晶体管元件结构及制作方法
JP5612268B2 (ja) 2008-03-28 2014-10-22 株式会社東芝 半導体装置及びｄｃ−ｄｃコンバータ
US7807576B2 (en) * 2008-06-20 2010-10-05 Fairchild Semiconductor Corporation Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
US7872305B2 (en) * 2008-06-26 2011-01-18 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
US8829624B2 (en) * 2008-06-30 2014-09-09 Fairchild Semiconductor Corporation Power device with monolithically integrated RC snubber
CN101620996B (zh) * 2008-07-03 2012-10-10 和舰科技(苏州)有限公司 一种栅氧化层的制造方法
US8138036B2 (en) * 2008-08-08 2012-03-20 International Business Machines Corporation Through silicon via and method of fabricating same
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
KR20100106017A (ko) * 2009-03-23 2010-10-01 삼성전자주식회사 리세스 채널 트랜지스터 및 이의 제조 방법
CN101866849B (zh) * 2009-04-16 2012-06-27 上海华虹Nec电子有限公司 在沟槽底部制备氧化膜的方法
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
CN102005373B (zh) * 2009-08-28 2012-08-22 中芯国际集成电路制造(上海)有限公司 栅极及功率场效应管的制造方法
US20110198689A1 (en) * 2010-02-17 2011-08-18 Suku Kim Semiconductor devices containing trench mosfets with superjunctions
US20120168819A1 (en) * 2011-01-03 2012-07-05 Fabio Alessio Marino Semiconductor pillar power MOS
US8598654B2 (en) 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
JP2014139956A (ja) * 2011-03-30 2014-07-31 Hitachi Ltd トレンチ型ＳｉＣ半導体装置の製造方法
US8642425B2 (en) 2012-05-29 2014-02-04 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device and structure
CN109326595B (zh) 2017-07-31 2021-03-09 联华电子股份有限公司 半导体元件及其制作方法
US20200176452A1 (en) * 2018-12-04 2020-06-04 Nanya Technology Corporation Memory device and method of forming the same
CN111489963B (zh) * 2020-04-17 2023-04-18 重庆伟特森电子科技有限公司 一种沟槽转角处具有厚栅氧化层的SiC-MOSFET栅的制备方法
CN111489961A (zh) * 2020-04-17 2020-08-04 重庆伟特森电子科技有限公司 沟槽转角处栅氧具有高场强承受力的SiC-MOSFET栅的制备方法
CN116487419B (zh) * 2023-06-20 2023-09-12 合肥晶合集成电路股份有限公司 半导体结构及其制备方法

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US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
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Also Published As

Publication number Publication date
CN1447986A (zh) 2003-10-08
US6861296B2 (en) 2005-03-01
DE10196527T1 (de) 2003-08-07
US20020153557A1 (en) 2002-10-24
WO2002015280B1 (fr) 2002-07-11
JP2004507092A (ja) 2004-03-04
DE10196527B3 (de) 2011-11-17
US6437386B1 (en) 2002-08-20
CN100429785C (zh) 2008-10-29
WO2002015280A1 (fr) 2002-02-21

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