AU2001273466A1 - Integrated tunable surface acoustic wave technology and sensors provided thereby - Google Patents
Integrated tunable surface acoustic wave technology and sensors provided therebyInfo
- Publication number
- AU2001273466A1 AU2001273466A1 AU2001273466A AU7346601A AU2001273466A1 AU 2001273466 A1 AU2001273466 A1 AU 2001273466A1 AU 2001273466 A AU2001273466 A AU 2001273466A AU 7346601 A AU7346601 A AU 7346601A AU 2001273466 A1 AU2001273466 A1 AU 2001273466A1
- Authority
- AU
- Australia
- Prior art keywords
- acoustic wave
- surface acoustic
- sensors provided
- wave technology
- tunable surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005516 engineering process Methods 0.000 title 1
- 238000010897 surface acoustic wave method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
- H03H9/02976—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21789800P | 2000-07-13 | 2000-07-13 | |
| US21789700P | 2000-07-13 | 2000-07-13 | |
| US60217898 | 2000-07-13 | ||
| US60217897 | 2000-07-13 | ||
| PCT/US2001/022218 WO2002007309A2 (en) | 2000-07-13 | 2001-07-13 | Integrated tunable surface acoustic wave technology and sensors provided thereby |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001273466A1 true AU2001273466A1 (en) | 2002-01-30 |
Family
ID=26912364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001273466A Abandoned AU2001273466A1 (en) | 2000-07-13 | 2001-07-13 | Integrated tunable surface acoustic wave technology and sensors provided thereby |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6621192B2 (en) |
| AU (1) | AU2001273466A1 (en) |
| WO (1) | WO2002007309A2 (en) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3285341B2 (en) | 2000-06-01 | 2002-05-27 | 士郎 酒井 | Method of manufacturing gallium nitride based compound semiconductor |
| US6848295B2 (en) * | 2002-04-17 | 2005-02-01 | Wayne State University | Acoustic wave sensor apparatus, method and system using wide bandgap materials |
| JP3466144B2 (en) * | 2000-09-22 | 2003-11-10 | 士郎 酒井 | How to roughen the surface of a semiconductor |
| JP2002208541A (en) * | 2001-01-11 | 2002-07-26 | Shiro Sakai | Nitride-based semiconductor device and method of manufacturing the same |
| JP3548735B2 (en) | 2001-06-29 | 2004-07-28 | 士郎 酒井 | Method of manufacturing gallium nitride based compound semiconductor |
| US7005685B2 (en) * | 2002-02-28 | 2006-02-28 | Shiro Sakai | Gallium-nitride-based compound semiconductor device |
| US7005964B2 (en) * | 2002-04-08 | 2006-02-28 | P. J. Edmonson Ltd. | Dual track surface acoustic wave RFID/sensor |
| US20040144927A1 (en) * | 2003-01-28 | 2004-07-29 | Auner Gregory W. | Microsystems arrays for digital radiation imaging and signal processing and method for making microsystem arrays |
| US8377683B2 (en) | 2002-06-06 | 2013-02-19 | Rutgers, The State University Of New Jersey | Zinc oxide-based nanostructure modified QCM for dynamic monitoring of cell adhesion and proliferation |
| WO2003104789A1 (en) * | 2002-06-06 | 2003-12-18 | Rutgers, The State University Of New Jersey | MULTIFUNCTIONAL BIOSENSOR BASED ON ZnO NANOSTRUCTURES |
| US6887736B2 (en) * | 2002-06-24 | 2005-05-03 | Cermet, Inc. | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
| WO2005024961A1 (en) * | 2003-08-29 | 2005-03-17 | Osram Opto Semiconductors Gmbh | Radiation emitting semi-conductor element |
| EP1719247A4 (en) * | 2004-02-26 | 2011-03-23 | Mnt Innovations Pty Ltd | Layered surface acoustic wave sensor |
| US7399280B2 (en) * | 2004-04-21 | 2008-07-15 | Honeywell International Inc. | Passive and wireless in-vivo acoustic wave flow sensor |
| US20050277839A1 (en) * | 2004-06-10 | 2005-12-15 | Honeywell International, Inc. | Wireless flow measurement in arterial stent |
| US20080022755A1 (en) * | 2004-07-12 | 2008-01-31 | Weidmann Plastics Technology Ag | Gas Detection Method and Gas Sensor |
| US7134319B2 (en) * | 2004-08-12 | 2006-11-14 | Honeywell International Inc. | Acoustic wave sensor with reduced condensation and recovery time |
| US20060033039A1 (en) * | 2004-08-12 | 2006-02-16 | Williams John R | Photo-controlled luminescence sensor system |
| US7017416B1 (en) | 2004-10-22 | 2006-03-28 | Honeywell International, Inc. | Disposable pressure diaphragm and wireless sensor systems and methods |
| ITMI20042017A1 (en) * | 2004-10-22 | 2005-01-22 | Getters Spa | GAS SURFACE SENSOR OF ACOUSTIC WAVES AND PROCEDURE FOR ITS MANUFACTURING |
| US7723154B1 (en) | 2005-10-19 | 2010-05-25 | North Carolina State University | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
| US7343804B2 (en) * | 2005-11-14 | 2008-03-18 | Honeywell International Inc. | Wireless acoustic wave sensor system for use in vehicle applications |
| TWI330461B (en) * | 2006-01-12 | 2010-09-11 | Ind Tech Res Inst | Surface acoustic wave bio-chip |
| US7554144B2 (en) * | 2006-04-17 | 2009-06-30 | Macronix International Co., Ltd. | Memory device and manufacturing method |
| JP4848849B2 (en) * | 2006-06-13 | 2011-12-28 | 富士ゼロックス株式会社 | Sensor |
| US7687971B2 (en) * | 2006-08-15 | 2010-03-30 | Northrop Grumman Corporation | Electric field control of surface acoustic wave velocity |
| DE102006057747B4 (en) * | 2006-09-27 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Semiconductor body and semiconductor chip with a semiconductor body |
| US7656253B2 (en) | 2007-04-18 | 2010-02-02 | Northrop Grumman Space & Mission Systems Corporation | Surface acoustic wave passband control |
| US8508100B2 (en) * | 2008-11-04 | 2013-08-13 | Samsung Electronics Co., Ltd. | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
| TWI395934B (en) * | 2009-04-28 | 2013-05-11 | Univ Shu Te | UV light detector |
| US9128033B2 (en) * | 2009-11-06 | 2015-09-08 | Samsung Electronics Co., Ltd. | Multiple surface acoustic wave sensor system |
| US7829376B1 (en) | 2010-04-07 | 2010-11-09 | Lumenz, Inc. | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
| US20110248322A1 (en) * | 2010-04-12 | 2011-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Piezoelectric Gate-Induced Strain |
| US8480793B2 (en) | 2010-09-15 | 2013-07-09 | Exxonmobil Research And Engineering Company | Method and apparatus for removing contaminant from fluid |
| KR20130062625A (en) * | 2011-12-05 | 2013-06-13 | 삼성전자주식회사 | Apparatus and method for measuring signal using sinc function |
| CN102569483A (en) * | 2011-12-19 | 2012-07-11 | 北京交通大学 | MgZnO solar-blind photoresistor and preparation method thereof |
| US9270251B2 (en) * | 2013-03-15 | 2016-02-23 | Adaptive Methods, Inc. | Carrier for mounting a piezoelectric device on a circuit board and method for mounting a piezoelectric device on a circuit board |
| CN103268897B (en) * | 2013-05-30 | 2015-11-04 | 吉林大学 | Ultraviolet detector with passivated wide bandgap oxide semiconductor thin film layer and preparation method |
| EP2889589A1 (en) * | 2013-12-24 | 2015-07-01 | Honeywell International Inc. | Bulk acoustic wave (BAW) sensors for liquid level measurements |
| CN107850486B (en) | 2015-07-17 | 2020-06-16 | 电子部品研究院 | Multiple light sensor and method of making the same |
| WO2017014328A1 (en) | 2015-07-17 | 2017-01-26 | 전자부품연구원 | Ultraviolet sensor and method for producing same |
| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US10126165B2 (en) | 2015-07-28 | 2018-11-13 | Carrier Corporation | Radiation sensors |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| US9928727B2 (en) | 2015-07-28 | 2018-03-27 | Carrier Corporation | Flame detectors |
| RU2613590C1 (en) * | 2015-11-09 | 2017-03-17 | федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" | Passive wireless surface acoustic wave ultraviolet radiation sensor |
| CN105572303B (en) * | 2015-12-08 | 2017-12-15 | 夏文轩 | A kind of chemical sensing devices |
| EP3482495B1 (en) * | 2016-07-11 | 2020-04-15 | Epitronic Holdings Pte. Ltd. | Surface acoustic wave rfid sensor for hemodynamic wearables |
| CN106410588B (en) * | 2016-08-26 | 2019-02-22 | 中国科学院深圳先进技术研究院 | A controller and laser stimulator for controlling acousto-optic regulator |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345176A (en) * | 1980-11-03 | 1982-08-17 | United Technologies Corporation | Temperature compensated gallium arsenide surface acoustic wave devices |
| JPS63260313A (en) * | 1987-04-17 | 1988-10-27 | Clarion Co Ltd | Surface acoustic wave convolver |
| US4967113A (en) * | 1988-03-24 | 1990-10-30 | Clarion Co., Ltd. | Surface-acoustic-wave convolver |
| US5091669A (en) * | 1990-05-31 | 1992-02-25 | Clarion Co., Ltd. | Surface acoustic wave convolver |
| US5689123A (en) * | 1994-04-07 | 1997-11-18 | Sdl, Inc. | III-V aresenide-nitride semiconductor materials and devices |
| US6130147A (en) * | 1994-04-07 | 2000-10-10 | Sdl, Inc. | Methods for forming group III-V arsenide-nitride semiconductor materials |
| US6373620B1 (en) * | 1996-02-05 | 2002-04-16 | Corning Applied Technologies Corporation | Thin film electro-optic beam steering device |
| DE19622013A1 (en) | 1996-05-31 | 1997-12-11 | Siemens Ag | Acoustic electronic component working with surface acoustic waves |
| CN1228206A (en) * | 1996-07-19 | 1999-09-08 | 山之内和彦 | Surface Acoustic Wave Functional Devices |
| JP4079393B2 (en) * | 1998-03-10 | 2008-04-23 | シャープ株式会社 | Nitride-based compound semiconductor laser device and manufacturing method thereof |
| AU2001273465A1 (en) * | 2000-07-13 | 2002-01-30 | Rutgers, The State University | Integrated tunable surface acoustic wave technology and systems provided thereby |
| JP4416297B2 (en) * | 2000-09-08 | 2010-02-17 | シャープ株式会社 | Nitride semiconductor light emitting element, and light emitting device and optical pickup device using the same |
| US6379985B1 (en) * | 2001-08-01 | 2002-04-30 | Xerox Corporation | Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
-
2001
- 2001-07-13 AU AU2001273466A patent/AU2001273466A1/en not_active Abandoned
- 2001-07-13 WO PCT/US2001/022218 patent/WO2002007309A2/en active Application Filing
- 2001-07-13 US US09/905,205 patent/US6621192B2/en not_active Expired - Fee Related
-
2003
- 2003-04-03 US US10/406,303 patent/US6710515B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20020043890A1 (en) | 2002-04-18 |
| US20030201694A1 (en) | 2003-10-30 |
| WO2002007309A2 (en) | 2002-01-24 |
| WO2002007309A3 (en) | 2002-04-18 |
| US6621192B2 (en) | 2003-09-16 |
| US6710515B2 (en) | 2004-03-23 |
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