NL2019811B1 - Gas system for furnace - Google Patents

Abstract

The invention relates to a method of preparing an optical preform, a furnace assembly there for and an optical preform obtained thereby. The method of the invention comprises the steps of: positioning an optical preform comprising silica Within a cavity of a furnace; passing an etchant gas into the furnace and at least one of through an open channel defined in the optical preform and around the optical preform; and passing a neutralizing gas into the cavity of the furnace, the neutralizing gas configured to neutralize the etchant gas.

Description

Patent center

Θ 2019811 (2?) Application number: 2019811 (22) Application submitted: 26 October 2017

Int. CL:

C03B 37/012 (2018.01) C03B 37/014 (2018.01)

(30) Priority: 0 Patent holder (s): August 29, 2017 US 62 / 551,372 Coming Incorporated in Coming, New York, United States of America, US. 0 Application registered: March 11, 2019 0 Inventor (s): Dana Craig Bookbinder in Coming, 0 Request published: New York (US). - Richard Michael Fiacco in Coming, New York (US). 0 Patent granted: Pushkar Tandon in Coming, March 11, 2019 New York (US). 0 Patent issued: May 21, 2019 0 Authorized representative: ir. P.J. Hylarides et al. In The Hague.

(§) GAS SYSTEM FOR FURNACE © The invention relates to a method of preparing an optical preform, a furnace assembly there and an optical preform obtained. The method of the invention comprises the steps of: positioning an optical preform comprising silica within a cavity of a furnace; passing an etchant gas into the furnace and at least one of through an open channel defined in the optical preform and around the optical preform; and passing a neutralizing gas into the cavity of the furnace, the neutralizing gas configured to neutralize the etchant gas.

NL B1 2019811

This patent has been granted regardless of the attached result of the research into the state of the art and written opinion. The patent corresponds to the documents originally submitted.

GAS SYSTEM FOR FURNACE

The disclosure relates to optical preform furnaces, and more particularly to optical preform furnaces which preferably incorporate a neutralizing gas system.

In the formation of multimode optical preforms, a centerline etch step may be performed using etching agents to remove a centerline silica-conlaining layer or the preform. Core preforms can form centerline seeds upon subsequent processing which may adversely impact the performance and yield of the optical fiber drawn from these preforms. To address the issue of seeds in these preforms, the centerline may be etched after the preform is consolidated using an etching agent through the centerline.

Etching agents used in the centerline are transported into a furnace where the preform is positioned in. In addition to etching the preform, the etching agent may also be a muffle within the furnace resulting in a significant reduction of the muffle lifetime.

According to one aspect of the present disclosure, a method of preparing an optical preform, comprising the steps of: positioning an optical preform comprising silica within a cavity of a furnace; passing an etching agent, for example an etchant gas into the furnace in order to etch the optical preform, and preferably passing the etchant gas through an open channel defined in the optical preform and / or around the optical preform. Preferably, a neutralizing gas is also passed into the cavity of the furnace, the neutralizing gas configured to neutralize the etchant gas.

According to another aspect of the present disclosure, a method of operating a furnace, comprising the steps of: positioning an optical preform within a furnace, preferably within a muffle of the furnace, passing an etchant gas, preferably including fluorine at a first molar flow rate into the furnace and through a centerline channel or the optical preform; and preferably passing a neutralizing gas containing silicon at a second molar flow rate into the furnace of the furnace configured to neutralize the etchant gas, being a ratio of the first molar flow rate into the furnace to the second molar flow rate into the furnace is from about 0 to about 2.

According to yet another aspect of the present disclosure, a furnace assembly preferably includes a muffle defining a cavity. The muffle includes silicon. An optical preform is positioned within the cavity. The preform defines an open channel having an entrance aperture and an exit aperture. An etchant gas system is preferably fluidly coupled with the preform and is preferably configured to pass an etchant gas into the open channel or the optical preform. A neutralizing gas system is preferably configured to pass a neutralizing gas into the cavity, while the neutralizing gas is configured to neutralize the etchant gas.

The disclosure also relates to a method of preparing an optical preform, including the steps or:

positioning an optical preform comprising silica within a cavity of a furnace;

- passing an etchant gas into the furnace and preferably through an open channel defined in the optical preform and / or around the optical preform; and

- preferably passing a neutralizing gas into the cavity of the furnace, the neutralizing gas configured to neutralize the etchant gas.

The method preferably further comprises the step of etching the open channel or the optical preform using the etchant gas.

The step of passing the etchant gas preferably comprises passing the etchant gas through a centerline or the optical preform.

The neutralizing gas is preferably passed into the cavity of the furnace proximate to the exit of the open channel or the optical preform.

The step neutralizing gas is preferably passed at a flow rate such that a molar ratio of etchant gas entering the furnace to neutralizing gas entering the furnace is> 0 and <2.

The neutralizing gas is preferably passed at a flow rate such that a molar ratio of etchant gas entering the furnace to neutralizing gas entering the furnace is> 0 and <1, the neutralizing gas comprises SiCl ₄ and the etchant gas comprises SF ₆ .

The furnace can be heated to about 1000 ° C or greater.

The disclosure also refers to a method of operating a furnace, including the steps of:

- positioning an optical preform, preferably within a muffle or a furnace;

- passing an etchant gas, preferably including fluorine at a first molar flow rate into the furnace and more preferably through a centerline channel of the optical preform; and

- preferably passing a neutralizing gas containing silicon at a second molar flow rate into the furnace of the furnace configured to neutralize the etchant gas, being a ratio of the first molar flow rate into the furnace to the second molar flow rate into the furnace is from about 0 to about 2.

The furnace can be heated to a temperature from around 1000 ° C to about 1600 ° C.

The muffle can contain silicon.

The neutralizing gas is preferably passed all the second molar flow rate such that a ratio of the first molar flow rate into the furnace to the second molar flow rate into the furnace is> 0 and <1.

The disclosure also relates to a furnace assembly, which may include:

- a muffle defining a cavity, the muffle including silicon;

an optical preform positioned within the cavity, the preform defining an open channel having an entrance aperture and an exit aperture;

- an etchant gas system fluidly coupled with the preform and configured to pass an etchant gas into the open channel of the optical preform; and

- a neutralizing gas system configured to pass a neutralizing gas into the cavity, the neutralizing gas being configured to neutralize the etchant gas.

The optical preform is an optical fiber core preform.

The etchant gas system may be configured to pass the etchant gas into an entrance aperture or the optical preform, through an open channel or the core preform and out the optical preform through an exit aperture.

The neutralizing gas system is preferably configured to pass the neutralizing gas proximate the exit aperture.

The optical preform can be a consolidated optical preform.

The etchant gas may include a fluorine containing gas, for example, the fluorine containing gas comprises at least one of SF ₆ , NF ₃ , and SOF ₄ .

The neutralizing gas may comprise a silicon-containing gas, for example, the silicon-containing gas comprises at least one of SiCl <, SiiCl ,,, SijOCh ,, S1HCl3, SiH ₂ Cl ₂ , SiH ₃ Cl, SiBr ₄ , SiH ₄ , S1CI3F , S1Cl2F2, S1CIF3, Octamethylcyclotetrasiloxane, and SiR _x F _Y where Y <3, 1 <X <4, and R is an alkyl, aryl or H moiety

These and other aspects, objects, and features of the present disclosure will be understood and appreciated by those skilled in the art upon studying the following specification, clauses, and appended drawings.

The following is a description of the figures in the accompanying drawings. The figures are not necessarily to scale, and certain features and certain views of the figures may be shown exaggerated in scale or in schematic in the interest of clarity and conciseness.

In the drawings:

FIG. 1 is a schematic view of a furnace used to prepare an optical preform, according to at least one example;

FIG. 2 is a schematic flow diagram or exemplary method of operating the funace or FIG. 1, according to at least one example; and

FIG. 3 is a graph or SiO ₂ concentration as a function or SiCl ₄ and temperature.

Additional features and ad vantages of the invention will be set forth in the detailed description which follows and will be apparent to those skilled in the art from the description, or recognized by practicing the invention as described in the following description, together with the clauses and appended drawings.

As used read, the term “and / or,” when used in a list of two or more items, means that any one of the listed items can be employed by itself, or any combination of two or more of the listed items can be employed. For example, if a composition is described as containing components A, B, and / or C, the composition can contain A alone; B alone; C alone; A and B in combination; A and C in combination; B and C in combination; or A, B, and C in combination.

In this document, relational terms, such as first and second, top and bottom, and the like, are used solely to distinguish one entity or action from another entity or action, without necessarily requiring or implying any actual such relationship or order between such entities or actions.

For purposes of this disclosure, the term “coupled” (in all of its forms: couple, coupling, coupled, etc.) generally means the joining of two components (electrical or mechanical) directly or indirectly to one another. Such joining may be stationary in nature or movable in nature. Such joining may be achieved with the two components (electrical or mechanical) and any additional intermediate members being integrally formed as a single unitary body with another or with the two components. Such joining may be permanent in nature, or may be removable or releasable in nature, unless otherwise stated.

As used says, the term “about” means that amounts, sizes, formulations, parameters, and other quantities and characteristics are not and need not be exact, but may be approximate and / or larger or smaller, as desired, reflecting tolerances, conversion factors, rounding off, measurement error and the like, and other factors known to those of skill in the art. When the term "about" is used in describing a value or end-point or a range, the disclosure should be understood to include the specific value or end-point referred to. Whether or not a numerical value or end-point of a range in the specification recites “about”, the numerical value or end-point of a range is intended to include two expended: one modified by “about”, and one not modified by "About". It will be further understood that the end-points of each of the ranges are significant both in relation to the other end-point, and independently of the other end-point.

The terms "substantial", "substantial", and variations "used" are meant to note that a described feature is equal or approximately equal to a value or description. For example, a "substantially planar" surface is intended to be a surface that is planar or approximately planar. Moreover, "substantial" is intended to denote that two values are equal or approximately equal. In some, "substantially" may denote values within about 10% or each other, such as within about 5% or each other, or within about 2% or each other.

As used read the terms “the”, “a”, or “an”, mean “at least one”, and should not be limited to “only one” unless explicitly indicated to the contrary. Thus, for example, reference to “a component” includes two or more such components unless the context clearly indicates otherwise.

Referring now to FIG. 1, reference numeral 10 generally refers to a furnace assembly 10. The furnace assembly 10 includes a muffle 14 defining a cavity 18. An optical preform 22 is positioned within the cavity 18. The optical preform 22 defines an entrance aperture 26, an exit aperture 30 and an open channel 34. An etching gas system 38 is fluidly coupled with the optical preform 22 and is configured to pass an etchant gas 42 into the optical preform 22. A neutralizing gas system 46 is configured to pass a neutralizing gas 50 into the cavity 18 or the furnace assembly 10. According to various examples, the neutralizing gas 50 is configured to neutralize the etchant gas 42.

The furnace assembly 10 is configured to provide a heated environment for the optical preform 22. The furnace assembly 10 may be a consolidation furnace, a redraw furnace or other types of furnaces used with optical preforms 22. The furnace assembly 10 is configured to heat the cavity 18 within the muffle 14 to temperature of from about 800 ° C to about 1600 ° C. For example, the furnace assembly 10 may be configured to heat the cavity to a temperature of about 800 ° C, 900 ° C, 1000 ° C, 1100 ° C, 1200 ° C, 1300 ° C, 1400 ° C, 1500 ° C , 1600 ° C or greater. Further, the furnace assembly 10 may be configured to heat the cavity 18 to a temperature of from about 800 ° C to about 1600 ° C. In some examples, the furnace assembly 10 may be configured to heat the cavity 18 to a temperature of from about 1000 ° C to about 1600 ° C. The furnace assembly 10 may be configured to heat the cavity 18 to a temperature of from about 1200 ° C to about 1600 ° C. It will be understood that the cavity 18 may have a uniform temperature across the length of the cavity 18, or may have one or more zones which have a greater heat relative to the rest of the cavity I8. For example, the cavity 18 may be hotter (eg, about 1200 ° C or greater) proximate the exit aperture 30 of the optical preform 22 relative to a temperature (eg, about 1000 ° C or less) proximate the entrance aperture 26 of the optical preform 22.

The muffle 14 is positioned within the furnace assembly 10 to define the cavity 18 within which the optical preform 22 is positioned. The muffle 14 may define a furnace exhaust 60 positioned towards a top of the muffle 14. The furnace exhaust 60 may allow for an equalizing of the pressure within the cavity 18 and the surrounding environments or for the removal of various gases produced within the furnace assembly 10. The muffle 14 may be composed of a refractory material which both contains heat within the furnace assembly 10 and protects other components of the furnace assembly 10. According to various examples, the refractory material or the muffle 14 may include silicon. For example, the muffle 14 may be composed of quartz, silica and / or other silicon-containing compounds. Although depicted as including a single muffle 14, it will be understood that the furnace assembly 10 may include multiple muffles 14. For example, the furnace assembly 10 may include a primary muffle and a sacrificial muffle which is positioned closer to the optical preform 22 As will be explained in greater detail below, use of refractory materials of the muffle 14 which have the same or similar composition to that of the optical preform 22 may have deleterious effects when the etchant gas 42 is used.

The optical preform 22 is suspended within the muffle 14 by a tube 64 and an integral handle 68. Tube 64 extends out of the furnace exhaust 60 to couple with the etching gas system 38. The tube 64 is fluidly coupled with both the etching gas system 38 and the optical preform 22 such that the etchant gas 42 may be passed in from the etching gas system 38 into the optical preform 22. For example, the tube 64 and integral handle 68 may be configured to perfuse the etchant gas 42 optical preform 22 and / or pass the etchant gas 42 into the open channel 34. The tube 64 may be composed of a metal, a ceramic and / or other materials capable of withstanding the heat generated by the furnace assembly 10. Further, the tube 64 may be configured to resist etching gas 42. The tube 64 is coupled to the integral handle 68 through a seal 72. Like the tube 64, the seal 72 may be configured to resist the temperature of the furnace assembly 10 as well as etching by the etchant gas 42. The inte gral handle 68 may be formed with the optical preform 22 or may be attached after formation of the optical preform 22. The integral handle 68 may function as a point to hold, move or suspend the optical preform 22.

The optical preform 22 may be an optical fiber core preform and / or an optical fiber cladding preform. Such optical preforms 22 may be utilized in the formation of doped or undoped single mode or multimode optical fibers. The optical preform 22 may be formed via outside vapor 20 deposition (OVD). OVD processes to form the optical preforms 22 may involve deposition of silica or doped-silica soot (eg, SiO ₂ and GeOs) onto a substrate configured to accept the soot. In an exemplary manufacturing process, the optical perform 22 is formed via soot deposition on a bait rod (eg, a ceramic substrate rod configured to accept the soot). The bait rod may have a cylindrical, square or other higher order polygonal cross-sectional shape. It will be understood that 25 the optical preform 22 may be doped at this point or flood doped at a later point. Exemplary dopants may include GeO ₂ , AI2O3, P2O5, Br, Cl and / or F. For example, as part of the soot deposition process to form the optical preform 22, the first few deposition passes (100 microns to 500 microns or soot deposit ) or soot (eg, in an OVD process) are SiO ₂ optionally doped with a relatively small amount of GeO ₂ (eg ,, 10-18 wt.% of GeO ₂ ), followed by a SiO ₂ soot deposition 30 with a greater amount (eg, about twice as much) or GeO ₂ , in order to allow the desired GeO ₂ -

S1O2 profile near the bait rod to be achieved. It will be understood that the optical preform 22 may additionally or alternatively be formed through modified chemical vapor deposition, physical vapor deposition and / or through a soot pressing process. The soot is applied to the bait rod may be composed of nanometer and / or micrometer scale particles or SiO ₂ and / or dopant particles. The 35 finished optical preforms 22 may have an outer diameter or from about 20 mm to about 200 mm.

The diameter of the entrance 26 may be about 20 mm or less, about 10 mm or less, about 5 mm or

Ί less, about 4 mm or less, or about 3 mm or less. For example, the diameter of the entrance 26 may be from about 1 mm to about 20 mm or from about 3 mm to about 10 mm.

The bait rod has been removed from the optical preform 22 to form the open channel 34. The open channel 34 or the optical preform 22 may extend through a portion, a majority, substantially all or completely through the optical preform 22. The open channel 34 may be positioned along a centerline or the optical preform 22. In such an example, the open channel 34 may also be referred to as a centerline channel, an open cavity and / or an open centerline. It will be understood that the bait rod may be positioned off-center or the optical preform 22 or that multiple bait rods (eg, and therefore multiple open cavities 34) are contemplated. Removal of the bait rod from the optical preform 22 may form the entrance 26, the exit 30 and the open channel 34 or the preform 22. Once the bait rod has been removed, the optical preform 22 is placed in a consolidation furnace (eg, the furnace assembly 10 or another furnace) for drying and consolidation. Drying of the optical preform 22 may be accomplished by placing the preform 22 in a halogen containing atmosphere (eg, Cl ₂ ) to remove moisture (ie, OH). Next, the optical preform 22 may be consolidated (eg, sintered into void free glass) to form a consolidated optical preform 22. It will be understood that the optical preform, prior to sintering and consolidation, may be opaque and / or translucent to visible and non-visible light, while after consolidation, the preform 22 may be transparent to visible and non-visible light.

The consolidated optical preforms 22 can be directly drawn into optical fiber or first be further processed to collapse the open channel 34 in a redraw furnace prior to drawing the preform into an optical fiber. The open channel 34 of the optical preform 22 may be at least partially collapsed prior to being drawn into fiber. Collapsing of the open channel 34 may be performed at an elevated temperature (e.g., at about 1700 ° C to 2200 ° C) and optionally under a vacuum.

Collapsed preforms can also be referred to as preform canes. In some cases these canes are referred to as core canes which start from a core preform. The optical preform 22 may be transformed into a core cane by heating the preform 22 at temperatures at or above the softening point of the glass and the deposited material and by collapsing the preform 22 to remove the entrance 26, the exit 30 and the open channel 34.

An etching process using the etching gas system 38 and the etchant gas 42 may be used to etch a portion of the optical preform 22. In some examples, the etchant gas 42 may be passed into the optical preform 22 to etch an interior (eg, the open channel 34) or the preform 22. In other examples, the etchant gas 42 may be passed along an exterior of the optical preform 22 to etch an exterior of the optical preform 22. As such, the etchant gas 42 may be passed into the furnace assembly 10 at least one of through the open channel 34 defined in the optical preform 22 and around the optical preform 22. Where the etchant gas 42 is passed on an exterior of the optical preform 22, the etchant gas 42 may or may not pass through the tube 64 and / or integral handle 68.

In examples where the etchant gas 42 is passed into the open channel 34, passing of the etchant gas 42 may be performed prior to collapse and / or sintering of the optical preform 22. The etchant gas 42 may be passed in a vapor phase to remove the first few deposition passes (eg, in an OVD manufacturing method) or a predetermined depth (eg, for a soot pressing method). Such a feature may be advantageous in controlling a dopant concentration profile of the optical preform 22 and / or in removing defects (eg, interior and / or exterior) from the optical preform 22 prior to collapsing the preform 22 which may lead to defects in optical fibers drawn from the optical preform 22. For example, as part of the soot deposition process, the first few passes (approximately 100 microns to 500 microns) or soot may have an undesirable amount (eg, low or high relative to a target concentration) or dopant near the open channel 34. Removal of the bait rod from the optical preform 22 may result in the formation of aberrations (eg, holes, rough spots, etc.) on the preform 22 proximate the centerline 34. The aberrations may also be known as centerline seeds. Formation of centerline seeds can adversely impact the performance and yield of an optical fiber drawn from these preforms 22.

Etching of the preform 22 may be accomplished by passing the etchant gas 42 from the etching gas system 38, through the tube 64, and into the optical preform 22. Introduction of the etchant gas 42 through the open channel 34 allows the etchant gas 42 to effectively etch the open channel 34 or the preform 22. The etchant gas 42 is a gas, which under the appropriate conditions (eg, temperature and concentration) is capable of removing crystalline or vitreous oxide materials through chemical action. The etchant gas 42 may include a fluorine-containing gas, but it will be understood that other etchant gasses 42 may be utilized without departing from the teachings provided. For example, the etchant gas 42 may include SF ₆ , SOF ₄ , CF4, SF _ft , NF ₃ , C ₃ F ₆ , C ₄ F _s , CHF ₃ , CC1F ₃ , CCFFj, CC1 ₃ F, SiF ₄ and combinations thereof . The etchant gas 42 may include one or more other gasses with little or no etching capability. For example, the etchant gas 42 may include one or more carrier gasses configured to carry the etchant gas 42. For example, the etchant gas 42 may include oxygen, helium, nitrogen, argon and / or other carrier gasses.

The etching gas system 38 may pass the etchant gas 42 into the furnace assembly 10 at a flow rate of about 25 standard cubic centimeters per minute (“seem”), about 50 seem or more, about 90 scent or more, about 150 seem or more, about 200 seem or more, about 300 seem or more, about 500 seem or more, about 1000 seem or more, or about 3000 seem or more through the open channel 34. In some examples, the flow rate of the etchant gas 42 into the furnace assembly 10 is from about 25 seem to about 10000 seem, or from about 25 seem to about 3000 seem, or from about 25 seem to about 1000 seem. The temperature of the etchant gas 42 contacting the optical preform 22 may be about 1700 ° C or less, about 1600 ° C or less, about 1550 ° C or less, about 1500 ° C or less, about 1400 ° C or less, about 1300 ^Ö C or less. In some examples, the temperature of the etchant gas 42 contacting the optical preform 22 is from about 800 ° C to about 1700 ° C, or from about 1000 ° C to about 1600 ° C, or from about 1200 ° C to about 1600 ° C. The etchant gas 42 may be passed through the optical preform 22 for a sufficient time that is about 100 microns or greater, about 200 microns or greater, about 300 microns or greater, about 400 microns or greater, about 500 microns or greater, about 600 microns or greater, about 700 microns or greater, about 800 microns or greater, about 900 microns or greater, or about 1000 microns or greater may be removed from the open channel 34. In some examples, the etchant gas 42 has passed through the optical preform 22 for a sufficient time at a sufficient temperature to remove from the open channel 34 from about 100 microns to about 3000 microns, or from about 100 microns to about 2000 microns, or from about 100 microns to about 1000 microns. It will be understood that the thickness removed from the open channel 34 is expressed as a radial distance.

As explained above, the etching gas system 38 may be configured to pass the etchant gas 42 into the entrance aperture 26 of the optical preform 22, through the open channel 34 and out of the optical preform 22 through the exit aperture 30. As the cavity 18 of the furnace assembly 10 is at an elevated temperature proximate the exit aperture 30, excess etchant gas 42 (eg, etchant gas 42 which has not reacted with the optical preform 22) may contact the muffle 14 and start etching silicon containing examples of the muffle 14. Such an outcome may be disadvantageous in decreasing the useable lifetime of the muffle 14. May, it may be advantageous in introducing the neutralizing gas 50 into the muffle 14 and / or proximate the exit aperture 30.

The neutralizing gas system 46 is configured to pass, or inject, the neutralizing gas 50 into the cavity 18 proximate the exit aperture 30. As explained above, the neutralizing gas 50 is configured to neutralize the etching effect of the etchant gas 42 such that the etchant gas 42 is substantially inert to the muffle 14. In other words, the neutralizing gas 50 may chemically react with the etchant gas 42 to neutralize and / or diminish the etching effect of the etchant gas 42 relative to silicon-containing compounds. According to various examples, the neutralizing gas 50 may include a silicon-containing gas. Silicon containing examples of the neutralizing gas 50 may include at least one of SiCl ₄ , Si ₂ Cl ₆ , Si ₂ OCl ₆ , SiHCl 3, SiH ₂ Cl ₂ , SiH.Cl, SiBr ₄ , SiH ₄ , SiCl ₃ F, SiCl ₂ F ₂ , SiClF 3, Octamethylcyclotetrasiloxane, and SiR _x F _Y where Y <3, 1 <X <4, and R a alkyl, aryl or H moiety, and / or combinations thereof.

Use of silicon-containing gasses in the neutralizing gas 50 are configured to react with the etchant gas 42 to mitigate and / or complete the ability of the etchant gas 42 to etch the muffle 14. As can be seen by Equation 1, fluorine containing examples of the etchant gas 42 (eg, SF6), without the neutralizing gas 50, will react with silicon containing examples of the muffle 14 and the optical preform 22 (eg, SiO ₂ ) alike.

SF ₆ + 1.5 SiO ₂ -fy 1.5 SiF ₄ + SO, (Eq. 1)

The introduction of silicon containing examples of the neutralizing gas 50 (eg, SiCl ₄ ) can be shown to neutralize the etching effects of fluorine containing examples of the etchanting gas 42 (SF ₆ ) by equation 2.

SF ₆ + 1.5 SiCl ₄ 1.5 SiF ₄ + SC1 ₆ (Eq. 2)

As shown by Equation 3, the introduction of silicon containing examples of the neutralizing gas 50 (eg, SiCl ₄ ) can be shown to preferentially neutralize the etching effects of fluorine containing examples of the etchant gas 42 (SF ₆ ) with minimal to no effect on silicon containing examples of the muffle 14 (eg, SiO ₂ ). Such a preferential reaction is believed to occur due to the chemical reaction availability or the vapor phase of the neutralizing gas 50 relative to the chemical reaction availability or the solid muffle 14.

SF ₆ + 1.5 SiCl ₄ + 1.5 SiO ₂ 1.5 SiF ₄ + SC1 ₆ + 1.5 SiO ₂ (Eq. 3)

The neutralizing gas system 46 is configured to pass the neutralizing gas 50 into the furnace assembly 10 at such a rate that a molar ratio of the etchant gas 42 entering the furnace assembly 10 to the neutralizing gas 50 entering the furnace assembly 10 may be about 0.1 , about 0.2 or greater, about 0.3 or greater, about 0.4 or greater, about 0.5 or greater, about 0.6 or greater, about 0.7 or greater, about 0.8 or greater, about 0.9 or greater, about 1.0 or greater, about 1.1 or greater , about 1.2 or greater, about 1.3 or greater, about 1.4 or greater, about 1.5 or greater, about 1.6 or greater, about 1.7 or greater, about 1.8 or greater, about 1.9 or greater, about 2.0 or greater, about 3.0 or greater , about 4.0 or greater, or about 5.0 or greater. In some examples, the molar ratio of the etchant gas 42 entering the furnace assembly 10 to the neutralizing gas 50 entering the furnace assembly 10 is from about 0 to about 10, or from about 0 to about 5, or from about 0 to about 2 , or from about 0.1 to about 2. In other words, the molar ratio of the etchant gas 42 entering the furnace assembly 10 to the neutralizing gas 50 entering the furnace assembly 10 is> 0 and <2 or> 0 and <1.

Referring now to FIG. 2, an exemplary method 80 or operating the furnace assembly 10 is depicted. The method 80 may start with a step 84 or positioning the optical preform 22 within the cavity 18 or the furnace assembly 10. As explained above, the optical preform 22 is suspended within the cavity 18 or the muffle 14 via the tube 64 and the integral handle 68. The furnace assembly 10 may be heated to a temperature of about 1000 ° C or greater. The furnace assembly 10 may be heated to a temperature from about 1000 ° C to about 1600 ° C. The furnace assembly 10 may be heated to a temperature of from about 800 ° C to about 1600 ° C, or from about 1000 ° C to about 1600 ° C, or from about 1200 ° C to about 1600 ° C.

Next, a step 88 of passing the etchant gas 42 into the furnace assembly 10 and at least one of the open channel 34 defined in the optical preform 22 and around the optical preform 22 has been performed. As explained above, the etchant gas 42 may be passed through the open channel 34, through the tube 64 and / or around an exterior of the optical preform 22. The etchant gas 42 may be passed into the furnace assembly 10 at first molar flow rate . In examples where the etchant gas 42 has passed into the optical preform 22, the etching gas system 38 passes the etchant gas 42 into the optical preform 22 through the tube 64 and into the optical preform 22 through the entrance aperture 26. The etchant gas 42 then travels through the centerline channel 34 and passes into the cavity 18 through the exit aperture 30. The passing of the etchant gas 42 has the effect of etching the open channel 34 of the optical preform 22. In examples where the etchant gas 42 has passed around the optical preform 22, the passing of the etchant gas 42 has the effect of etching the exterior of the optical preform 22.

Next, a step 92 or passing the neutralizing gas 50 into the cavity 18 or the furnace assembly 10 has been performed. As explained above, the neutralizing gas 50 is configured to neutralize the etchant gas 42. The neutralizing gas 50 is passed into the cavity 18 proximate to an end of the optical preform 22 (eg, the exit aperture 30 or the optical preform 22 open channel 34 ). The neutralizing gas 50 may be passed at such a second flow rate such a ratio of the first molar flow rate or the etchant gas 42 to the second molar flow rate or the neutralizing gas 50 is about 2 or less. In other words, the passing of the neutralizing gas 50 may be at a flow rate such a molar ratio of etchanting gas 42 to neutralizing gas 50 entering the furnace assembly 10 is about 2 or less, or about 1 or less.

Use of the present disclosure may offer a variety of advantages. First, use of the neutralizing gas 50 offers a simple and low-cost method of extending the useable life of the muffle 14. As the replacement of the muffle 14 in the furnace assembly 10 requires both a new muffle 14 and down time of the furnace assembly 10, increasing the usable life of the muffle 14 may increase the furnace assembly 10 output as well as decrease costs associated with maintenance of the furnace assembly 10. Second, use of the neutralizing gas 50 may allow for a more aggressive etching of the optical preform 22. For example, it may be advantageous to increase the amount, or concentration, or etchant gas 42 passed into the furnace assembly 10 (eg, to decrease etching time and / or depth of etch). As the present disclosure allows the excess etchant gas 42 to be neutralized prior to contact with the muffle 14, a greater concentration of etchant gas 42 may be passed through the preform 22 decl decreasing etching time without a corresponding decrease in usable lifetime of the muffle 14 Third, as silicon containing examples of neutralizing gas 50 are already used in many manufacturing steps of the optical preform 22, specialty gasses may not necessarily be required to implement the present disclosure.

Examples

Referring now to FIG. 3, modeled calculations of equilibrium concentrations of a SiO ₂ : SF ₆ : SiC14 system all temperatures between 1000 ° C and 1500 ° C are provided. For the illustrative calculations, 10 moles of SiO ₂ (eg, representing silica examples of the muffle 14) and 1 mole or SF ₆ (eg, the etchant gas 42) are provided. As can be seen from FIG. 3 and Table 1, the increasing use of SiCl ₄ (eg, the neutralizing gas 50) results in a greater retention of SiO ₂ .

Table 1:

Temperature SF ₆ : SiO ₂ : SiCl ₄ SF ₆ : SiO ₂ : SiCl ₄ SF ₆ : SiO ₂ : SiCl ₄ SF _ft : SiO ₂ : SiCl ₄ SF ₆ : SiO ₂ : SiCl ₄ [° C] 1: 10: 0 1: 10: 0.5 1: 10: 1 1: 10: 1.5 1: 10: 2 1000 8.5 9.5 10.0 10.0 10.0 1060 8.5 9.5 10.0 10.0 10.0 1110 8.5 9.5 10.0 10.0 10.0 1170 8.5 9.5 10.0 10.0 10.0 1220 8.5 9.5 10.0 10.0 10.0 1280 8.5 9.5 10.0 10.0 10.0 1330 8.5 9.5 10.0 10.0 10.0 1390 8.5 9.5 10.0 10.0 10.0 1440 8.5 9.5 10.0 10.0 10.0 1500 8.5 9.5 10.0 10.0 10.0

Table 1 shows the calculated SiO ₂ concentration at equilibrium. For the case where there is no SiCl ₄ and SiO ₂ / SF ₆ molar ratio is 10, it is calculated that the SiO ₂ concentration at equilibrium is 10 reduced by 15% because of the etching reaction. The SiO ₂ concentration is calculated to reduce by 5% for a SiCl ₄ / SF ₆ molar ratio or 0.5. The SiO ₂ concentration is calculated to reduce by less than 0.2% for a SiCl ₄ / SF ₆ molar ratio or greater than 1. The provided results show that the addition of SiCl ₄ inhibits SF ₆ etching of the SiO ₂ . In practical terms, the data shows that the introduction of silicon containing examples of the neutralizing gas 50 neutralizes the excess etchant gas 42 such that the silicon containing examples of the muffle 14 experience decreased etching. Such a decrease in muffle 14 etching results in a corresponding increase in usable lifetime of the muffle

14.

Table 2:

Examples Tube Etching Gas Carrier Gas Neutralizing Gas Tube Start ID Tube End ID Tube Mass Loess

Comparative Example 1 Silica sf ₆ (0.10 SLM) He (0.58 SLPM) SiCl ₄ (0.0 SLPM) 4.00 mm 4.6 mm 3.9 g Example 1 Silica sf ₆ (0.10 SLPM) He (0.38 SLPM) SiCl ₄ (0.20 SLPM) 4.00 mm 4.00 mm 0g

Table 2 shows the quantitative results or experimental data. Comparative Example 1 was a silica-based tube (eg, the muffle 14) having a length of 1.25 meters, an outer diameter or 6.37 mm. The silica tube had a centerline channel (eg, the open channel 34) with an inner diameter (ID) or 4.00 mm. The silica based tube or Comparative Example 1 was placed in a furnace tube (eg, the furnace assembly 10) with each end sticking out of the furnace tube. The tube furnace had a 30 cm hot zone and there were insulated end-caps having a hole in the center through which the silica tube was placed. The furnace temperature was held at 1125 ° C. The open cavity of this silica tube was then vapor phase etched at this temperature by flowing SF ₆ (eg, the etchant gas 42) and He (eg, a carrier gas) at a flow rate of about 0.10 and 0.58 SLPM, respectively, through the open cavity of the silica tube for 120 minutes. Immediately following this process, the silica tube was purged with flowing He at 0.58 SLPM continuously and the furnace tube was shut off and allowed to cool to room temperature. The silica tube was then removed from the furnace and weighed on an analytical balance. The silica tube had a mass loss of about 3.9 grams as a result of the SF ₆ etching process. The inner diameter of the silica tube that was in the tube furnace was measured in several places and was etched to about 4.6-4.7 mm (eg, about 0.3 mm to 0.35 mm wall thickness removed). The inner diameter of the silica lube was also found to be slightly surface pitted (about 0.1 mm to 0.5 mm diameter) from the etching process. The inner diameter or the portion of the silica tube outside the tube furnace remained pristine and un-etched at 4.00 mm inner diameter.

The experimentation of Example 1 was carried out in a similar manner to that of Comparative Example 1, but included SiCl ₄ (eg, the neutralizing gas 50). In Example 1, a silica-based lube (eg, the muffle 14) having a length of 1.25 meters, an outer diameter or 6.37 mm. The silica tube had an open cavity (eg, the centerline channel 34) with an inner diameter of 4.00 mm. The silica based tube of Example 1 was placed in a furnace tube (eg, the furnace assembly 10) with each end sticking out of the furnace tube. The tube furnace had a 30 cm hot zone and there were insulated end-caps having a hole in the center through which the silica tube was placed. The furnace temperature was held at 1125 ° C. The open cavity of this silica tube was then vapor phase exposed at this temperature to flowing SF ₆ (eg, the etchant gas 42), He (eg, a carrier gas) and SiCl ₄ (eg, the neutralizing gas 50) at 0.10 SLPM , 0.38 SLPM and 0.20 SLPM, respectively, through the open cavity of the silica tube for 120 minutes. Immediately following this process, the silica tube was purged with flowing He at 0.58 SLPM continuously and the furnace tube was shut off and allowed to cool to room temperature. The silica tube was then removed from the furnace and weighed on an analytical balance. The silica tube had a mass loss or 0.0 grams as a result of the SF ₆ and S1CI4 exposure process. The inner diameter of the silica tube that was in the furnace tube was measured in several places and was found to be pristine, un-etched and retained with a 4.00 mm inner diameter. The portion of the inner diameter of the silica tube outside the tube furnace also remains pristine and un-etched with a 4.00 mm inner diameter. These results demonstrate that having a silicon containing gas (eg, the neutralizing gas 50) in the vapor phase in the presence of silica etchant gas (eg, the fluorine containing etchant gas 42), preventing the etchant gas from etching the silica tube, by having the neutralizing gas react with the etchant gas.

Modifications of the disclosure will occur to those skilled in the art and to those who make or use the disclosure. Therefore, it is understood that the illustrated in the drawings and described above are merely for illustrative purposes and not intended to limit the scope of the disclosure, which is defined by the following claims, as interpreted according to the principles of patent law, including the doctrine of equivalents.

Claims (38)

CLAUSES 1. A method of preparing an optical preform, including the steps or: - positioning an optical preform comprising silica within a cavity or a furnace; and - passing an etching agent into the furnace in order to etch the preform. 2. The method according to clause 1, where the etching agent is an etchant gas. 3. The method according to clause 1 or 2, the etching agent is passed into an interior or the preform. 4. The method according to any of the preceding clauses, the etching agent is passed along an exterior or the preform. 5. The method according to any of the preceding clauses, the etching agent is passed through an open channel defined in the preform. 6. The method according to any of the clauses 2-5, when dependent on clause 2, where the etchant gas is passed into the furnace cavity in a vapor phase. 7. The method according to any of the clauses 2-6, when dependent on clause 2, where the etchant gas is capable of or removing crystalline or vitreous oxide materials through chemical action. 8. The method according to clause 7, where the etchant gas includes a fluorine-containing gas. 9. The method according to clause 7 or 8, including one or more of the following: SF ₆ , SOF ₄ , CF ₄ , SF ₆ , NF ₃ , C ₂ F ₆ , C ₄ F ₈ , CHF ₃ , CCIFj, CC1 ₂ F ₂ , CC1 ₃ F, SiF ₄ and combinations thereof. 10. The method according to any of the clauses 2-9, when dependent on clause 2, requiring the etchant gas includes one or more other gasses with little or no etching capability, for example one or more carrier gasses configured to carry the etchant gas . 11. The method according to clause 10, comprising the carrier gases include one or more of the following: oxygen, helium, nitrogen, argon. 12. The method according to any of the clauses 5-11, when dependent on clause 2, where the etchant gas is passed into the furnace at a flow rate or one of the following: - about 25 standard cubic cm ³ min ' ¹ (“seem”); - about 50 seem or more; about 90 seem or more; - about 150 seem or more; - about 200 seem or more; - about 300 seem or more; about 500 seem or more; about 1000 seem or more; or - about 3000 seem. 13. The method according to clause 12, where the etchant gas is passed at the flow rate through the open channel defined in the preform. 14. The method according to any of the preceding clauses, when dependent on clause 2, where the etchant gas is passed into the furnace at a rate of from about 25 seem to about 10000 seem, or from about 25 seem to about 3000 seem, or from about 25 seem to about 1000 seem. 15. The method according to any of the preceding clauses, when dependent on clause 2, according to the temperature of the etchant gas is about 1700 ° C or less, about 1600 ° C or less, about 1550 ° C or less, about 1500 ° C or less, about 1400 ° C or less, or about 1300 ° C or less. 16. The method according to any of the preceding clauses, when dependent on clause 2, the temperature of the etchant gas contacting the optical preform is from about 800 ° C to about 1700 ° C, or from about 1000 ° C to about 1600 ° C, or from about 1200 ° C to about 1600 ° C. 17. The method according to any of the preceding clauses 5-16, when dependent on clause 2, including the step of etching the open channel or the optical preform using the etchant gas. 18. The method according to any of the preceding clauses 5-17, when dependent on clause 2, where the etchant gas is passed through the open channel in the optical preform for a sufficient time that about 100 microns or greater, about 200 microns or greater, about 300 microns or greater, about 400 microns or greater, about 500 microns or greater, about 600 microns or greater, about 700 microns or greater, about 800 microns or greater, about 900 microns or greater, or about 1000 microns or greater in thickness is removed from the open channel, where the thickness is removed from the open channel is expressed as a radial distance. 19. The method according to clause 18, where the etchant gas has passed through the optical preform for a sufficient time at a sufficient temperature to remove from the open channel from about 100 microns to about 3000 microns, or from about 100 microns to about 2000 microns, or from about 100 microns to about 1000 microns. 20. The method according to any of the preceding clauses, when dependent on clause 2, further including passing a neutralizing gas into the cavity of the furnace, the neutralizing gas configured to neutralize the etchant gas. 21. The method according to clause 20, where the neutralizing gas has passed into the furnace such that the etchant gas is substantially inert to a muffle of the furnace. 22. The method according to clause 20 or 21, involving the neutralizing gas chemically reacts with the etchant gas to neutralizing and / or diminish the etching effect of the etchant gas relative to silicon-containing compounds. 23. The method according to clause 22, the neutralizing gas includes a silicon compound, for example at least one of SiCl ₄ , Si ₂ Cl ₆ , Si ₂ OCl or SiHCl, SiH ₂ Cl ₂ , SilflCl, SiBr ₄ , SiH ₄ , SiCl ₃ F, SiCl ₂ F ₂ , SiCIF, Octamethylcyclotetrasiloxane, and SiR _x F _Y where Y <3, 1 <X <4, and R is an alkyl, aryl or H moiety, and / or combinations thereof. 24. The method of any of the clauses 20-23, further including the step of passing the neutralizing gas into the cavity of the furnace proximate an exit of the open channel or the optical preform. 25. The method of any of the clauses 20-24, taking the step of passing a neutralizing gas further comprising the step of passing the neutralizing gas at a flow rate such a molar ratio of etchant gas entering the furnace to neutralizing gas entering the furnace is> 0 and <2. 26. The method of clause 25, where the step of passing a neutralizing gas further comprises the step of passing the neutralizing gas all a flow rate such that a molar ratio of etchant gas entering the furnace to neutralizing gas entering the furnace is> 0 and <1, the neutralizing gas comprises S1CI4 and the etchanting gas comprises SF ₆ . 27. The method of any of the preceding clauses, further including the step of heating the furnace to about 1000 ° C or greater. 28. The method according to any of the preceding clauses, where: - the optical preform is positioned within a muffle of the furnace; the etchant gas including fluorine is passed at a first molar flow rate into the furnace and through a centerline channel of the optical preform; and a neutralizing gas containing silicon is passed at a second molar flow rate into the furnace of the furnace configured to neutralize the etchant gas, a ratio of the first molar flow rate into the furnace to the second molar flow rate into the furnace is from about 0 to about 2. 29. The method of clause 28, further including the step of heating the furnace to a temperature from about 1000 ° C to about 1600 ° C. 30. The method of clause 28 or 29, the step of positioning the optical preform within a muffle of the furnace further comprises the step of positioning the optical preform within a muffle including silicon. 31. The method of any of the clauses 28-30, the step of passing a neutralizing gas further comprises the step of passing the neutralizing gas at the second molar flow rate such a ratio of the first molar flow rate into the furnace to the second molar flow rate into the furnace is> 0 and <1. 32. A furnace assembly, including an optical preform positioned within the cavity, an etchant gas system fluidly coupled with the preform and configured to pass an etchant gas into the open channel or the optical preform. 33. The furnace assembly according to clause 32, further including: a muffle defining a cavity, the muffle including silicon, the preform defining an open channel having an entrance aperture and an exit aperture; and a neutralizing gas system configured to pass a neutralizing gas into the cavity, the neutralizing gas is configured to neutralize the etchant gas. 34. The furnace assembly of clause 32 or 33, the optical preform is an optical fiber core preform. 35. The furnace assembly of any of the clauses 32-34, where the etchant gas system is configured to pass the etchant gas into an entrance aperture of the optical preform, through an open channel or the core preform and out the optical preform through an exit aperture. 36. The furnace assembly or clause 35, the neutralizing gas system is configured to pass the neutralizing gas proximate the exit aperture. 37. The furnace assembly or any of the clauses 32-36, where the optical preform is a consolidated optical preform. 38. An optical preform obtainable according to the method of any of the clauses 1-31. CONCLUSIONS A method for manufacturing an optical preform, comprising the steps of: - positioning a silica-containing optical preform in a cavity of an oven; and - introducing an etchant into the oven to etch the preform. The method of claim 1, wherein the etchant is a gaseous etchant. The method of claim 1 or 2, wherein the etchant is introduced into an inside of the preform. A method according to any one of the preceding claims, wherein the etchant is passed along an outside of the preform. 5. A method according to any one of the preceding claims, wherein the etchant is passed through an open channel defined in the preform. Method according to any of claims 2-5, when dependent on claim 2, wherein the gaseous etchant is introduced into the hollow furnace space in a vapor phase. The method of any one of claims 2-6, when dependent on claim 2, wherein the gaseous etchant is adapted to remove crystalline or glassy oxide materials by chemical processing. The method of claim 7, wherein the gaseous etchant contains a fluorine-containing gas. A method according to claim 7 or 8, comprising one or more of the following: SF ₆ , SOF ₄ . CF ₄ , SF ₆ , NF ₃ , C ₂ F ₆ , C ₄ F ₈ , CHF ₃ , CClF ₃ , CCl ₂ F ₂ , CCl ₃ F, SiF ₄ and combinations thereof. 10. Method as claimed in any of the claims 2-9, when dependent on claim 2, wherein the gaseous etchant contains one or more other gases with little or no etching power, for example one or more carrier gases adapted to carry the gaseous etchant. The method of claim 10, wherein the carrier gases comprise one or more of the following: oxygen, helium, nitrogen, argon, The method of any one of claims 5-11 when dependent on claim 2, wherein the gaseous etchant is introduced into the oven at one of the following flow rates: - around 25 standard cubic cm 'min' ¹ (sccm ”); - around 50 sccm or more; - around 90 sccm or more; - around 150 sccm or more; - around 200 sccm or more; - around 300 sccm or more; - around 500 sccm or more; - around 1000 sccm or more; or - around 3000 sccm. The method of claim 12, wherein the gaseous etchant is passed at the flow rate through the open channel defined in the preform. A method according to any one of the preceding claims, when dependent on claim 2, wherein the gaseous etchant is introduced into the oven at a speed of around 25 sccm to around 10000 sccm, or from around 25 sccm to around 3000 sccm, or from around 25 sccm to around 1000 sccm. The method of any one of the preceding claims, when dependent on claim 2, wherein the temperature of the gaseous etchant is around 1700 ° C or less, around 1600 ° C or less, around 1550 ° C or less, around 1500 ° C or less, around 1400 ° C or less, around 1300 ° C or less. Method according to any of the preceding claims, when dependent on claim 2, wherein the temperature of the gaseous etchant in contact with the optical preform is from around 800 ° C to around 1700 ° C, or from around 1000 ° C to around Is 1600 ° C, or is from around 1200 ° C to around 1600 ° C. The method of any one of claims 5-16, when dependent on claim 2, comprising the step of etching the open channel of the optical preform using the gaseous etchant. The method of any one of claims 5-17, when dependent on claim 2, wherein the gaseous etchant is passed through the open channel in the optical preform for such a time that around 100 microns or larger, around 200 microns or larger, around 300 microns or greater, around 400 microns or greater, around 500 microns or greater, around 600 microns or greater, around 700 microns or greater, around 800 microns or greater, around 900 microns or greater, or around 1000 microns or greater in thickness is removed from the open channel, the removed thickness of the open channel being expressed as a radial distance. A method according to claim 18, wherein the gaseous etchant is passed through the optical preform for such a time at such a temperature from the open channel from around 100 microns to around 3000 microns, or from around 100 microns to around 2000 microns, or from around 100 microns to around 1000 microns. The method of any one of the preceding claims when dependent on claim 2, further comprising introducing a neutralizing gas into the hollow furnace space, the neutralizing gas being adapted to neutralize the gaseous etchant. The method of claim 20, wherein the neutralizing gas is introduced into the oven such that the gaseous etchant is substantially inert to a muffle of the oven. A method according to claim 20 or 21, wherein the neutralizing gas reacts chemically with the gaseous etchant to neutralize and / or reduce the etching effect of the gaseous etchant with respect to silicon-containing compounds. The method of claim 22, wherein the neutralizing gas contains a silicon compound, for example, at least one of SiCl ₄ , Si ₂ Cl ₆ , Si ₂ OCl ₆ , SiHCl ₃ , SiH ₂ Cl ₂ , SiH _; Cl, SiBr ₄ , SiH ₄ , SiCl ₃ F, SiCl ₂ F ₂ , SiClF ₃ , octamethylcyclotetrasiloxane, and SiR _x F _Y with Y <3, 1 <X <4, and R is an alkyl, aryl or H group, and / or combinations thereof. The method of any one of claims 20 to 23, further comprising the step of introducing the neutralizing gas into the hollow furnace space near an exit of the open channel of the optical preform. The method of any one of the preceding claims 20-24, wherein the step of introducing a neutralizing gas further comprises the step of introducing the neutralizing gas at a flow rate such that a mole ratio of gaseous etchant enters the oven relative to of neutralizing gas entering the oven is> 0 and <2. The method of claim 25, wherein the step of introducing a neutralizing gas further comprises the step of introducing the neutralizing gas at a flow rate such that a mole ratio of gaseous etchant entering the oven to neutralizing gas that oven enters> 0 and <1, wherein the neutralizing gas comprises SiCl ₄ and the gaseous etchant comprises SF ₆ . The method of any one of the preceding claims, further comprising the step of heating the oven to around 1000 ° C or more. The method of any one of the preceding claims, wherein: - the optical preform is positioned inside a muffle of the oven; - the gaseous etchant comprising fluorine is introduced into the oven at a first mole flow rate and through a centralized channel of the optical preform; and - a neutralizing gas comprising silicon with a second mole flow rate which is arranged to neutralize the gaseous etchant, is introduced, wherein a ratio of the first mole flow rate into the oven relative to the second mole flow rate into the oven of about 0 to about 2. The method of claim 28, further comprising the steps of heating the oven to a temperature of around 1000 ° C to around 1600 ° C. The method of claim 28 or 29, wherein the step of placing the optical preform in a muffle of the oven further comprises the step of placing the optical preform in a silicon-comprising muffle. The method of any one of claims 28-30, wherein the step of introducing a neutralizing gas further comprises the step of introducing the neutralizing gas at the second mole flow rate such that a ratio of the first mole flow rate enters the furnace relative to the second mole flow rate, the oven is in> 0 and <1. A furnace assembly comprising an optical preform positioned in the cavity, a gaseous etchant system in fluid communication with the preform and adapted to introduce a gaseous etchant into the open channel of the optical preform. The oven assembly of claim 32, further comprising: a muffle defining a cavity, the muffle comprising silicon, the preform defining an open channel having an entrance opening and an exit opening; and a neutralizing gas system adapted to introduce a neutralizing gas into the cavity, the neutralizing gas being adapted to neutralize the gaseous etchant. The furnace assembly of claim 32 or 33, wherein the optical preform is an optical fiber core for shape. The furnace assembly according to any of claims 32-34, wherein the gaseous etchant system is adapted to introduce the gaseous etchant into an entrance aperture of the optical preform, through an open channel of the core preform, and out through an exit aperture discharge the optical preform. The furnace assembly of claim 35, wherein the neutralizing gas system is adapted to bring the neutralizing gas near the exit port. The oven assembly of any one of claims 32-36, wherein the optical preform is a reinforced optical preform. An optical preform obtained according to the method of any one of claims 1-31. 2/3 r * I I! i> u <I c & I Ϊ: 1 8 ": OO kf> t «3 es \ ··· o O r * —ίΟ sspui ^f uoi; £ djue3uo3 ^? < © «5 o d o o & ·? *» 4 *