+

Goto et al., 2017 - Google Patents

Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

Goto et al., 2017

View PDF
Document ID
9925619252716045697
Author
Goto M
Sasaki M
Xu Y
Zhan T
Isoda Y
Shinohara Y
Publication year
Publication venue
Applied surface science

External Links

Snippet

Abstract p-and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

Similar Documents

Publication Publication Date Title
Goto et al. Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology
Shen et al. Enhancing thermoelectric properties of Sb2Te3 flexible thin film through microstructure control and crystal preferential orientation engineering
Zou et al. Peltier effect in a co-evaporated Sb2Te3 (P)-Bi2Te3 (N) thin film thermocouple
Takayama et al. Multi-layered-stack thermoelectric generators using p-type Sb2Te3 and n-type Bi2Te3 thin films by radio-frequency magnetron sputtering
Wang et al. Effects of annealing temperature on thermoelectric properties of Bi2Te3 films prepared by co-sputtering
Nuthongkum et al. [Bi]:[Te] Control, Structural and Thermoelectric Properties of Flexible Bi x Te y Thin Films Prepared by RF Magnetron Sputtering at Different Sputtering Pressures
Fan et al. High-performance bismuth telluride thermoelectric thin films fabricated by using the two-step single-source thermal evaporation
Yamauchi et al. Highly oriented crystal growth of nanocrystalline bismuth telluride thin films with anisotropic thermoelectric properties using two-step treatment
Zheng et al. Achieving ultrahigh power factor in n-type Ag2Se thin films by carrier engineering
Goncalves et al. Optimization of Bi2Te3 and Sb2Te3 thin films deposited by co-evaporation on polyimide for thermoelectric applications
Takashiri et al. Structural and thermoelectric properties of fine-grained Bi0. 4Te3. 0Sb1. 6 thin films with preferred orientation deposited by flash evaporation method
Takashiri et al. Improved thermoelectric performance of highly-oriented nanocrystalline bismuth antimony telluride thin films
Takashiri et al. Bismuth antimony telluride thin films with unique crystal orientation by two-step method
Takashiri et al. Effects of homogeneous irradiation of electron beam on crystal growth and thermoelectric properties of nanocrystalline bismuth selenium telluride thin films
Boulouz et al. Preparation and characterization of MOCVD bismuth telluride thin films
Fan et al. Thermoelectric properties of zinc antimonide thin film deposited on flexible polyimide substrate by RF magnetron sputtering
Morikawa et al. Characteristics of nanostructured bismuth telluride thin films fabricated by oblique deposition
Lee et al. Effect of electronic contribution on temperature-dependent thermal transport of antimony telluride thin film
Yonezawa et al. Atomic composition changes in bismuth telluride thin films by thermal annealing and estimation of their thermoelectric properties using experimental analyses and first-principles calculations
Vora-ud et al. Thermoelectric properties of c-GeSb0. 75Te0. 5 to h-GeSbTe0. 5 thin films through annealing treatment effects
Shi et al. Preparation and thermoelectric properties of MoTe2 thin films by magnetron co-sputtering
Rapaka et al. The effect of sputtering power on structural, mechanical, and electrical properties of Copper Selenide Thermoelectric thin films deposited by magnetron sputtering
Vora-ud et al. Microstructural control by substrate heating in Pulse-DC sputtering induced thermoelectric Ge2Sb2Te5 thin films
Sowjanya et al. Effect of substrate temperature and film thickness on the thermoelectric properties of In2Te3 thin films
Shao et al. High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering
点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载