Yan et al., 1994 - Google Patents
Atomic structure of β-SiC (100) surfaces: a study using the Tersoff potentialYan et al., 1994
- Document ID
- 6155963963667936077
- Author
- Yan H
- Hu X
- Jónsson H
- Publication year
- Publication venue
- Surface science
External Links
Snippet
Atomic structure of the β-SiC (100) surface is examined in a theoretical study using the empirical Tersoff potential. The surface energy is evaluated using several models of the atomic structure for three different surface compositions. The previously proposed Si dimer …
- 229910010271 silicon carbide 0 title abstract description 19
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
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