Takemura et al., 1998 - Google Patents

Classifications

• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
  • H01J1/02—Main electrodes
  • H01J1/30—Cold cathodes, e.g. field-emissive cathode
  • H01J1/304—Field-emissive cathodes
  • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J9/00—Apparatus or processes specially adapted to the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
  • H01J9/02—Manufacture of electrodes or electrode systems
  • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
  • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2201/00—Electrodes common to discharge tubes
  • H01J2201/30—Cold cathodes
  • H01J2201/304—Field emission cathodes
  • H01J2201/30446—Field emission cathodes characterised by the emitter material
  • H01J2201/30453—Carbon types
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J21/00—Vacuum tubes
  • H01J21/02—Tubes with a single discharge path
  • H01J21/06—Tubes with a single discharge path having electrostatic control means only
  • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J31/00—Cathode ray tubes; Electron beam tubes
  • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
  • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
  • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
  • H01J31/123—Flat display tubes
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2329/00—Electron emission display panels, e.g. field emission display panels
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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