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Evidence for effective mass reduction in GaAs/AlGaAs quantum wells

A. T. Hatke1, M. A. Zudov1,*, J. D. Watson2,3, M. J. Manfra2,3, L. N. Pfeiffer4, and K. W. West4

  • 1School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
  • 2Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
  • 3Birck Nanotechnology Center, School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
  • 4Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • *Corresponding author: zudov@physics.umn.edu

Phys. Rev. B 87, 161307(R) – Published 26 April, 2013

DOI: https://doi.org/10.1103/PhysRevB.87.161307

Abstract

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. Surprisingly, the effective mass, obtained from the period of microwave-induced resistance oscillations, is found to be about 12% lower than the band mass in GaAs, mb. This finding provides strong evidence for electron-electron interactions which can be probed by microwave photoresistance in very high Landau levels. In contrast, the measured magnetoplasmon dispersion revealed an effective mass which is close to mb, in accord with previous studies.

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