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    Local density of states in mesoscopic samples from scanning gate microscopy

    M. G. Pala1, B. Hackens2, F. Martins3, H. Sellier3, V. Bayot2, S. Huant3, and T. Ouisse3

    • 1IMEP-LAHC-MINATEC (UMR CNRS∕INPG∕UJF 5130), Boîte Postale 257, 38016 Grenoble, France
    • 2CERMIN, DICE Laboratory, UCL, B-1348 Louvain-la-Neuve, Belgium
    • 3Institut Néel, CNRS, and Université Joseph Fourier, Boîte Postale 166, 38042 Grenoble, France

    Phys. Rev. B 77, 125310 – Published 10 March, 2008

    DOI: https://doi.org/10.1103/PhysRevB.77.125310

    Abstract

    We study the relationship between the local density of states (LDOS) and the conductance variation ΔG in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift ΔG is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers–Kronig relation holds between LDOS and ΔG. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov–Bohm rings including a random distribution of impurities and analyze the LDOS-ΔG correspondence by means of exact numerical simulations, when localized states or semiclassical orbits characterize the wave function of the system.

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