We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala et al. [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in $n\text{−}\mathrm{Ga}\mathrm{As}$, although the agreement is not as good in $p\text{−}\mathrm{Ga}\mathrm{As}$. This suggests that interaction effects can explain the metallic drop in resistivity at $B=0$ in $n\text{−}\mathrm{Ga}\mathrm{As}$ systems, but more work is required to understand $p\text{−}\mathrm{Ga}\mathrm{As}$ systems.