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WO2022067994A1 - Procédé et système de détection d'angle de rotation - Google Patents

Procédé et système de détection d'angle de rotation Download PDF

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Publication number
WO2022067994A1
WO2022067994A1 PCT/CN2020/128557 CN2020128557W WO2022067994A1 WO 2022067994 A1 WO2022067994 A1 WO 2022067994A1 CN 2020128557 W CN2020128557 W CN 2020128557W WO 2022067994 A1 WO2022067994 A1 WO 2022067994A1
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WO
WIPO (PCT)
Prior art keywords
hall sensor
vertical hall
rotation angle
amr
angle detection
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Application number
PCT/CN2020/128557
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English (en)
Chinese (zh)
Inventor
姜杰
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重庆睿歌微电子有限公司
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Publication of WO2022067994A1 publication Critical patent/WO2022067994A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes

Definitions

  • the invention belongs to the technical field of integrated circuits, and relates to an angle measurement method, in particular to a rotation angle detection method and system.
  • Anisotropic magnetoresistance refers to the phenomenon that the resistivity of ferromagnetic materials changes with the change of its own magnetization and the angle between the current direction; its microscopic mechanism is based on the density of states and spin correlation induced by spin-orbit coupling. Anisotropy of scattering; this is different from other magnetoresistive effects (eg GMR, TMR, etc.) that rely on spin electron injection and detection.
  • AMR anisotropic magnetoresistance is used to detect the change in rotation angle.
  • the anisotropic magnetoresistance of AMR has the same induction to the north and south poles of the magnetic field, it can only achieve a detection range of 0 to 180° in applications used for angle detection, and cannot satisfy most of the full range of 0 to 360°. The need for range angle detection.
  • the invention provides a rotation angle detection method and system, which can make full use of AMR anisotropic magnetoresistance to achieve high resolution accuracy, and can make full use of vertical Hall to determine the angle range in which it is located, so as to achieve 0-360° high-resolution precision angle detection.
  • a rotation angle detection method the angle detection method comprises:
  • the first vertical Hall sensor induces the component of the magnetic field in the first direction (the direction is parallel to the surface of the device);
  • the second vertical Hall sensor senses the component of the magnetic field in the second direction (the direction is parallel to the surface of the device); the second direction is perpendicular to the first direction (and both are parallel to the surface of the device);
  • the corresponding rotation angle is obtained by detection.
  • the acquisition angle of the AMR anisotropic magnetoresistor is n° or (n+180)°; wherein, 0 ⁇ n ⁇ 180;
  • the rotation angle is determined at [0° ⁇ 90°), [90° ⁇ 180°), [180° ⁇ 270°), 270° ⁇ 360°) one of four intervals;
  • the angle determines whether the angle is n° or (n+180)°; if the rotation angle is determined in the [0° ⁇ 90°) interval or [90° ⁇ 180°) interval, the angle is n°; if If the rotation angle is determined in the [180° ⁇ 270°) interval or 270° ⁇ 360°) interval, the angle is (n+180)°.
  • the first direction is the X axis
  • the second direction is the Y axis
  • the 0° position of the X-axis of the first vertical Hall sensor coincides with the 0° position of the AMR magnetoresistive bridge, then:
  • the first vertical Hall sensor is turned over, and the second vertical Hall sensor is turned over, the rotation angle detected by the AMR anisotropic magnetoresistor is [0° ⁇ 90°);
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [90° ⁇ 180°);
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [180° ⁇ 270°);
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [270° ⁇ 360°).
  • a rotation angle detection system the rotation angle detection system includes:
  • a first Hall sensor for sensing the component of the magnetic field in a first direction (the direction is parallel to the surface of the device);
  • the second Hall sensor is used to sense the component of the magnetic field in the second direction (the direction is parallel to the surface of the device); the second direction is perpendicular to the first direction (and both are parallel to the surface of the device);
  • the angle detection unit is used for detecting the corresponding rotation angle in combination with the output results of the AMR anisotropic magnetoresistor, the first vertical Hall sensor and the second vertical Hall sensor.
  • the acquisition angle of the AMR anisotropic magnetoresistor is n° or (n+180)°; wherein, 0 ⁇ n ⁇ 180;
  • the rotation angle is determined at [0° ⁇ 90°), [90° ⁇ 180°), [180° ⁇ 270°), 270° ⁇ 360°) one of four intervals;
  • the angle detection unit is used to determine whether the angle is n° or (n+180)° according to the interval determined by the angle; if the rotation angle is determined to be in the [0° ⁇ 90°) interval or [90° ⁇ 180°) interval, The angle is n°; if the rotation angle is determined in the [180° ⁇ 270°) interval or the 270° ⁇ 360°) interval, the angle is (n+180)°.
  • the first vertical Hall sensor and the second vertical Hall sensor are vertically arranged.
  • the first vertical Hall sensor and the second vertical Hall sensor are arranged parallel to the surface of the setting device.
  • the first direction is the X axis
  • the second direction is the Y axis
  • the first vertical Hall sensor is turned over, and the second vertical Hall sensor is turned over, the rotation angle detected by the AMR anisotropic magnetoresistor is [0° ⁇ 90°);
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [90° ⁇ 180°);
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [180° ⁇ 270°);
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [270° ⁇ 360°).
  • the AMR anisotropic magnetoresistor, the first vertical Hall sensor and the second vertical Hall sensor are arranged in a chip.
  • the rotation angle detection method and system proposed by the present invention can not only make full use of the AMR anisotropic magnetoresistance to achieve high resolution accuracy, but also make full use of the vertical Hall to determine the angle range in which it is located, To achieve high-resolution angle detection of 0 to 360°.
  • FIG. 1 is a schematic diagram of the composition of a rotation angle detection system according to an embodiment of the present invention.
  • FIG. 2 is a flowchart of a rotation angle detection method according to an embodiment of the present invention.
  • FIG. 3-1 is a schematic diagram of the use of a rotation angle detection system in an embodiment of the present invention.
  • 3-2 is a schematic diagram of the use of a rotation angle detection system in an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the principle of angle detection by AMR anisotropic magnetoresistance in an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a two-axis vertical Hall, an AMR anisotropic magnetoresistance, and a magnet in an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of an angle interval in which a two-axis vertical Hall-assisted AMR is implemented to determine an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of a two-axis vertical Hall-assisted AMR implementing 0-360° detection according to an embodiment of the present invention.
  • FIG. 1 is a schematic diagram of the composition of the rotation angle detection system in an embodiment of the present invention; please refer to FIG. 1 , the rotation angle detection system includes: an AMR anisotropic magnetoresistor 1; A vertical Hall sensor 2, a second vertical Hall sensor 3 and an angle detection unit 4 (wherein the first vertical Hall sensor 2 and the second vertical Hall sensor 3 form a two-axis vertical Hall sensor 20, as shown in FIG. 6 . Show).
  • the AMR anisotropic magnetoresistor 1 is used to detect the initial rotation angle; the first vertical Hall sensor 2 is used to sense the component of the magnetic field in the first direction; the second vertical Hall sensor 3 is used to sense the magnetic field in the second direction.
  • the angle detection unit 4 is used for combining the output results of the AMR anisotropic magnetoresistor 1 , the first vertical Hall sensor 2 and the second vertical Hall sensor 3 to detect the corresponding rotation angle.
  • the acquisition angle of the AMR anisotropic magnetoresistor is n° or (n+180)°, wherein 0 ⁇ n ⁇ 180.
  • the rotation angle is determined at [0° ⁇ 90°), [90° ⁇ 180°), [180° ⁇ 270°), 270° ⁇ 360°) in one of four zones.
  • the angle detection unit is used to determine whether the angle is n° or (n+180)° according to the interval determined by the angle; if the rotation angle is determined to be in the [0° ⁇ 90°) interval or [90° ⁇ 180°) interval, The angle is n°; if the rotation angle is determined in the [180° ⁇ 270°) interval or the 270° ⁇ 360°) interval, the angle is (n+180)°.
  • the first vertical Hall sensor (also referred to as the X-axis vertical Hall) 2 and the second vertical Hall sensor (also referred to as the Y-axis vertical Hall) 3 are vertically arranged (Can be combined with Figure 6). In one embodiment, the first vertical Hall sensor 2 and the second vertical Hall sensor 3 are arranged parallel to the surface of the setting device. In an embodiment of the present invention, the first direction is the X axis, and the second direction is the Y axis.
  • Table 1 The relationship between the angle and the first Hall sensor and the second Hall sensor
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [0° ⁇ 90°); the If the first vertical Hall sensor is not flipped, and the second vertical Hall sensor is flipped, the rotation angle detected by the AMR anisotropic magnetoresistor is [90° ⁇ 180°); the first vertical Hall sensor is not flipped , and the second vertical Hall sensor is not flipped, the rotation angle detected by the AMR anisotropic magnetoresistor is [180° ⁇ 270°); the first vertical Hall sensor is flipped, and the second vertical Hall sensor If it is not flipped, the rotation angle detected by the AMR anisotropic magnetoresistor is [270° ⁇ 360°).
  • the AMR anisotropic magnetoresistor, the first vertical Hall sensor and the second vertical Hall sensor may be arranged in a chip.
  • the combination of AMR and vertical Hall can be various, including: integrating vertical Hall and AMR in one chip; integrating vertical Hall and signal processing circuit in one chip; integrating vertical Hall and AMR in one chip;
  • the AMR is packaged in one package; the vertical Hall device and the AMR device are placed in close proximity and other forms.
  • the two-axis vertical Hall sensor and the AMR anisotropic magnetoresistor 1 can also be arranged in various ways, such as the arrangement in Figure 3-1, Figure 3-2, and Figure 5.
  • AMR anisotropic magnetoresistance to achieve angle detection is shown in Figure 4.
  • it consists of two pairs of AMR magnetoresistance bridges arranged at 45°.
  • the bridge With the rotation of the external magnetic field parallel to the surface of the AMR magnetoresistance bridge , the bridge outputs the voltage signals of Sin (2 ⁇ ) and Cos (2 ⁇ ) that change with the rotation angle ⁇ , and the value of ⁇ can be obtained by calculation (such as calculation through a dedicated ASIC circuit or MCU).
  • the output of the AMR anisotropic magnetoresistance bridge is exactly the same in the range of 0 to 180° and the range of 180° to 360°. Therefore, when the AMR anisotropic magnetoresistance is used for angle detection, the actual Only angular intervals up to 180° can be resolved.
  • Fig. 5 discloses the detection schematic diagram of the rotation angle detection method of the present invention when the magnets are placed on the shaft end and the side.
  • the magnet 30 can be rotated by the rotating shaft 31; the vertical Hall device and the AMR anisotropic magnetoresistive device It can be arranged on one side of the magnet 30 , or can be arranged on one end of the magnet 30 .
  • Vertical Hall devices like AMR anisotropic magnetoresistive devices, can sense magnetic field changes parallel to the device surface. Therefore, the use of two vertical Halls (in the XY plane parallel to the surface of the device) at 90° to each other can assist the AMR anisotropic magnetoresistive bridge to achieve angle detection from 0 to 360°.
  • the magnet It can be placed on the Z axis or on the side. Note: Both the anisotropic magnetoresistive AMR and the vertical Hall VHS here sense magnetic field components parallel to the XY plane.
  • the X-axis vertical Hall senses the component on the X axis of the magnetic field parallel to the device surface (XY plane in Figure 5); the Y axis vertical Hall senses the component on the Y axis of the magnetic field parallel to the device surface (XY plane in Figure 5); As shown in FIG. 6 , the two-axis vertical Hall sensor 20 is in the range of 0 to 360°, and can assist in determining four ranges of 0° to 90°, 90° to 180°, 180° to 270°, and 270° to 360° .
  • FIG. 2 is a flowchart of the rotation angle detection method in an embodiment of the present invention; please refer to FIG. 2 , the angle detection method includes:
  • Step S1 the AMR anisotropic magnetoresistor performs initial rotation angle detection
  • Step S2 the first vertical Hall sensor induces the component of the magnetic field in the first direction; the first direction is parallel to the surface of the device;
  • Step S3 the second vertical Hall sensor induces the component of the magnetic field in the second direction;
  • the second direction is parallel to the surface of the device, and the second direction is perpendicular to the first direction;
  • Step S4 combining the output results of the AMR anisotropic magnetoresistor, the first vertical Hall sensor, and the second vertical Hall sensor to detect the corresponding rotation angle, see FIG. 7 .
  • the first direction is the X-axis
  • the second direction is the Y-axis
  • the acquisition angle of the AMR anisotropic magnetoresistor is n° or (n+180)°; wherein, 0 ⁇ n ⁇ 180; through the first vertical Hall sensor and the second vertical According to the output result of the Hall sensor, the rotation angle is determined in one of four ranges of [0° ⁇ 90°), [90° ⁇ 180°), [180° ⁇ 270°), and 270° ⁇ 360°).
  • the angle determines whether the angle is n° or (n+180)°; if the rotation angle is determined in the [0° ⁇ 90°) interval or [90° ⁇ 180°) interval, the angle is n°; if If the rotation angle is determined in the [180° ⁇ 270°) interval or 270° ⁇ 360°) interval, the angle is (n+180)°.
  • the 0° position of the X-axis of the vertical Hall and the 0° position of the AMR magnetoresistive bridge are coincident in a certain arrangement relationship, please refer to Table 1: the first vertical Hall If the sensor is flipped, and the second vertical Hall sensor is flipped, the rotation angle detected by the AMR anisotropic magnetoresistor is [0° ⁇ 90°); the first vertical Hall sensor is not flipped, and the second vertical Hall sensor is not flipped.
  • the rotation angle detected by the AMR anisotropic magnetoresistor is [90° ⁇ 180°); the first vertical Hall sensor is not flipped, and the second vertical Hall sensor is not flipped, then the AMR The rotation angle detected by the anisotropic magnetoresistor is [180° ⁇ 270°); the first vertical Hall sensor is flipped, and the second vertical Hall sensor is not flipped, then the AMR anisotropic magnetoresistor detects the rotation angle.
  • the rotation angle is [270° ⁇ 360°).
  • the rotation angle detection method and system proposed by the present invention can not only make full use of the AMR anisotropic magnetoresistance to achieve high resolution accuracy, but also make full use of the vertical Hall to determine the angle range in which it is located, so as to achieve high resolution. Angle detection with high resolution accuracy from 0 to 360°.

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  • General Physics & Mathematics (AREA)
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Abstract

Sont décrits ici un procédé et un système de détection d'angle de rotation, le procédé de détection d'angle comprenant les étapes suivantes : une magnétorésistance anisotrope AMR (1) effectue une détection d'angle de rotation initiale ; un premier capteur à effet Hall vertical (2) détecte une composante d'un champ magnétique dans une première direction ; un second capteur à effet Hall vertical (3) détecte une composante du champ magnétique dans une seconde direction, la seconde direction étant perpendiculaire à la première direction ; et un angle de rotation correspondant est détecté en combinaison avec les résultats de sortie de la magnétorésistance anisotrope AMR (1), du premier capteur à effet Hall vertical (2) et du second capteur à effet Hall vertical (3). Le procédé et le système de détection d'angle de rotation peuvent non seulement utiliser pleinement la magnétorésistance anisotrope AMR (1) afin d'obtenir une précision de résolution élevée, mais aussi utiliser pleinement le premier capteur à effet Hall vertical (2) et le second capteur à effet Hall vertical (3) pour déterminer l'intervalle d'angle dans lequel l'angle se situe de façon à obtenir une détection d'angle de précision de résolution élevée de 0 à 360°.
PCT/CN2020/128557 2020-09-29 2020-11-13 Procédé et système de détection d'angle de rotation WO2022067994A1 (fr)

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CN202011050028.8A CN112361954A (zh) 2020-09-29 2020-09-29 旋转角度检测方法及系统
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CN114594414A (zh) * 2022-01-28 2022-06-07 峰岹科技(深圳)股份有限公司 转动侦测装置、方法及可转动设备
CN114216393B (zh) * 2022-02-21 2022-05-17 泉州昆泰芯微电子科技有限公司 旋转角度检测装置、旋钮、学习用具及娱乐用具

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CN102654567A (zh) * 2011-03-01 2012-09-05 霍尼韦尔国际公司 360度角传感器
CN108474669A (zh) * 2015-11-02 2018-08-31 霍尼韦尔国际公司 用于amr360度传感器的差分霍尔磁体极性检测
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