+

US5665260A - Ceramic electrostatic chuck with built-in heater - Google Patents

Ceramic electrostatic chuck with built-in heater Download PDF

Info

Publication number
US5665260A
US5665260A US08/364,196 US36419694A US5665260A US 5665260 A US5665260 A US 5665260A US 36419694 A US36419694 A US 36419694A US 5665260 A US5665260 A US 5665260A
Authority
US
United States
Prior art keywords
electrostatic chuck
ceramic
built
layer
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/364,196
Inventor
Nobuo Kawada
Shoji Kano
Koji Hagiwara
Nobuo Arai
Junichi Arami
Kenji Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Tokyo Electron Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Tokyo Electron Ltd filed Critical Shin Etsu Chemical Co Ltd
Assigned to SHIN-ETSU CHEMICAL CO., LTD., TOKYO ELECTORON LIMITED reassignment SHIN-ETSU CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ARAI, NOBUO, ARAMI, JUNICHI, HAGIWARA, KOJI, ISHIKAWA, KENJI, KANO, SHOJI, KAWADA, NOBUO
Application granted granted Critical
Publication of US5665260A publication Critical patent/US5665260A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a ceramic electrostatic chuck with built-in heater or, more particularly, to a ceramic electrostatic chuck with built-in heater used in the temperature elevation and lowering step in a semiconductor process.
  • such a ceramic electrostatic chuck with built-in heater basically has a structure in which different kinds of ceramics are bonded together or, for example, a structure in which an electroconductor layer of graphite and an insulating layer of boron nitride are bonded to a substrate of boron nitride.
  • Such structures have the problem that, during repeated temperature elevation and lowering, separation takes place in the bonded parts because of the thermal stress due to the difference in the thermal expansion coefficients of the materials.
  • a ceramic electrostatic chuck with built-in heater has electrodes for electrostatic chucking made from an electroconductive ceramic bonded to one surface of a supporting substrate made from an electrically insulating ceramic, a heat generating layer made from an electroconductive ceramic bonded to the other surface and a covering layer of electrically insulating ceramic, where each of the supporting substrate, electrodes and heat generating layer has a surface roughness Rmax of 5 ⁇ m or larger.
  • Ceramic electrostatic chucks of the present invention are further characterized in that a diffusion-preventing layer is bonded on to the covering layer.
  • the inventors have conducted extensive investigations on methods for the prevention of separation of the bonded parts in a heretofore known ceramic electrostatic chuck with a built-in heater. As a result, they have arrived at the discovery that, in a known ceramic electrostatic chuck with built-in heater having electroconductive ceramic electrodes for electrostatic chucking bonded to one surface of a supporting substrate made from an electrically insulating ceramic, a heat generating layer made from an electroconductive ceramic bonded to the other surface and a covering of electrically insulating ceramic, separation at the bonded parts never takes place when each of the supporting substrate, electrodes for electrostatic chuck and heat generating layer has a surface roughness of 5 ⁇ m or larger.
  • This discovery leads to completion of the present invention after continued studies on the kinds of electrically insulating ceramic members and electroconductive ceramics for use in the ceramic electrostatic chuck with built-in heater, preparation method for the desired surface roughness and so on.
  • a ceramic electrostatic chuck with built-in heater according to the current invention has electrodes for electrostatic chucking made from an electroconductive ceramic bonded to one surface of a supporting substrate made from an electrically insulating ceramic, a heat generating layer made from an electroconductive ceramic bonded to the other surface and a covering of electrically insulating ceramic, where each of the supporting substrate, electrodes and heat generating layer has a surface roughness Rmax of 5 ⁇ m or larger.
  • the ceramic electrostatic chuck with built-in heater of the present invention is formed by bonding electrodes for electrostatic chucking made from an electroconductive ceramic on to a surface of a supporting substrate made from an electrically insulating ceramic along with bonding of a heat generating layer made from an electroconductive ceramic on to the other surface and providing a covering layer made from an electrically insulating ceramic thereon so that this constitution per se is known.
  • a known ceramic electrostatic chuck with built-in heater has the very serious defect that, although the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer are integrally bonded together, they have differences in the thermal expansion coefficients. When heating and cooling are repeated between room temperature and about 1100° C., these thermal expansion differences cause separation between the various bonded layers, ultimately destroying the chuck.
  • electrodes for electrostatic chucking and heat generating layer are surfaces having a roughness Rmax of at least 5 ⁇ m according to the present invention
  • the physical bonding strength between the supporting substrate and the electrodes for electrostatic chucking and heat generating layer bonded thereto and the physical bonding strength between the electrodes for electrostatic chucking or heat generating layer and the covering layer bonded thereto are increased by the anchoring effect, thereby preventing separation of the bonded parts even after repeated heating and cooling between room temperature and 1100° C.
  • the ceramic electrostatic chuck with built-in heater of the present invention comprises a supporting substrate, electrodes for electrostatic chucking, heat generating layer and covering layer.
  • This supporting substrate is made from an electrically insulating ceramic. Since the ceramic electrostatic chuck with built-in heater of the present invention has as an object use in semiconductor production and this process involves not only Si semiconductors but also III-V Group compound semiconductors, the supporting substrate is preferably made from boron nitride, a mixture of boron nitride and aluminum nitride or silicon nitride constituted from elements belonging to the same groups.
  • Boron nitride can be obtained by sintering according to a known method or by the chemical vapor-phase deposition method obtained by reacting, for example, ammonia and boron trichloride at 1900° to 2000° C. and 10 Torr.
  • the mixture of boron nitride and aluminum nitride can be obtained by sintering according to a known method.
  • Silicon nitride can be obtained by sintering according to a known method or by the chemical vapor-phase deposition method obtained by reacting, for example, ammonia and silicon tetrachloride at 1400° to 1500° C. and 5 Torr.
  • the electrodes for electrostatic chucking and the heat generating layer are made from an electroconductive ceramic, preferably pyrolytic graphite.
  • Pyrolytic graphite is particularly suited because of its very similar thermal expansion coefficient and relatively good adhesion to boron nitride and the like. Pyrolytic graphite can be obtained, for example, by subjecting methane gas to pyrolysis at 1900° to 2200° C. and 5 Torr.
  • the electrodes and heat generating layer may also be constructed from silicon carbide by the chemical vapor-phase deposition method, for example, by reacting an organosilicon compound such as methyl trichlorosilane and the like under the conditions of 1250° C. and 3 Torr.
  • the covering layer is made from an electrically insulating ceramic, preferably the same one as the supporting substrate and made by the chemical vapor-phase deposition method for purity.
  • the surfaces of the supporting substrate, electrodes for electrostatic chucking and heat generating layer have a surface roughness of at least 5 ⁇ m, which can be achieved, for example, by subjecting those surfaces to a sand-blasting treatment, whereby the boron nitride, mixture of boron nitride and aluminum nitride or silicon nitride for the supporting substrate and the graphite or silicon carbide for the electrodes for electrostatic chuck and heat generating layer can be readily imparted with a surface roughness Rmax of 5 to 50 ⁇ m.
  • the electrodes for electrostatic chucking and heat generating layer are bonded thereto.
  • the covering layer is bonded thereto to give the ceramic electrostatic chuck with built-in heater according to the present invention which has a long life without the troubles of separation of the component layers due to the changes in temperature.
  • the ceramic electrostatic chuck of the present invention having a covering layer made from boron nitride or a mixture of boron nitride and aluminum nitride, which features elements of the same Groups as the III-V Group metal containing semiconductor, prevents contamination of the semiconductor with an element of the Group IV.
  • the covering layer is made from silicon nitride, contamination of Si semiconductors by an element of Group III is prevented.
  • Another problem in certain processes is the damage of the semiconductor device by leaking current from the electrostatic chuck so that the covering layer sometimes requires the high insulating resistance of boron nitride.
  • the covering layer is made from boron nitride
  • contamination of silicon semiconductors may take place in some cases by the diffusion of boron from the covering layer, especially in a high temperature process. This contamination can be prevented by providing a diffusion-preventing layer of silicon oxide, silicon nitride or the like on the covering layer.
  • boron nitride, silicon nitride, graphite and silicon carbide used in the ceramic electrostatic chuck are formed by the chemical vapor-phase deposition method, because they are of a high purity without containing impurities such as binders and the like as compared with those prepared by the sintering method.
  • a disc made from pyrolytic boron nitride having a diameter of 160 mm and a thickness of 1 mm was prepared by reacting ammonia and boron trichloride under the conditions of 2000° C. and 10 Torr followed by a sand blasting treatment to impart both surfaces with a surface roughness Rmax of 5 ⁇ m.
  • a pyrolytic graphite layer having a thickness of 40 ⁇ m was formed thereon by the pyrolysis of methane gas under the conditions of 2200° C. and 5 Torr which was mechanically worked into the electrode pattern on one surface and the heater pattern on the other surface to serve as the electrodes for electrostatic chuck and heat generating layer, respectively, followed by a sand blasting treatment to impart the surfaces thereof with a surface roughness Rmax of 5 ⁇ m.
  • ammonia and boron trichioride were reacted as above to provide a covering layer of pyrolytic boron nitride having a thickness of 100 ⁇ m thereon so as to prepare a ceramic electrostatic chuck with built-in heater.
  • This electrostatic chuck was subjected to 100 cycle of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
  • a ceramic electrostatic chuck with built-in heater was prepared in the same manner, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 3 ⁇ m, and was subjected to the same separation test to find that separation took place at the bonded parts at a moment after 9 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
  • a disc of silicon nitride having a diameter of 160 mm and a thickness of 1 mm was prepared by the chemical vapor-phase deposition method by reacting ammonia and silicon tetrachloride under the conditions of 1400° C. and 5 Torr, followed by a sand blasting treatment so as to impart both surfaces thereof with a surface roughness Rmax of 6 ⁇ m.
  • a silicon carbide layer having a thickness of 100 ⁇ m was formed by the chemical vapor-phase deposition method thereon by the pyrolysis of methyl trichloro silane under the conditions of 1250° C. and 3 Torr, and an electrode pattern on one surface and a heater pattern on the other surface were mechanically worked to serve as the electrodes for electrostatic chucking and heat generating layer, respectively.
  • a sand blasting treatment imparted the surfaces thereof with a surface roughness Rmax of 7 ⁇ m.
  • ammonia and silicon tetrachloride were reacted as above provide a covering layer of silicon nitride by the chemical vapor-phase deposition method having a thickness of 150 ⁇ m thereon so as to prepare a ceramic electrostatic chuck with built-in heater.
  • This electrostatic chuck was subjected to 100 cycles of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
  • a ceramic electrostatic chuck with built-in heater was prepared in the same manner, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 2 ⁇ m and the same was subjected to the same separation test to find that separation took place at the bonded parts at a moment after 5 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
  • a disc of silicon nitride having a diameter of 160 mm and a thickness of 1 mm was prepared by the chemical vapor-phase deposition method by reacting ammonia and silicon tetrachloride under the conditions of 1400° C. and 5 Torr followed by a sand blasting treatment so as to impart both surfaces thereof with a surface roughness Rmax of 9 ⁇ m.
  • ammonia and silicon tetrachloride were reacted as above to provide a covering layer of silicon nitride by the chemical vapor-phase deposition method having a thickness of 100 ⁇ m thereon so as to prepare a ceramic electrostatic chuck with built-in heater.
  • This electrostatic chuck was subjected to 100 cycles of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
  • a ceramic electrostatic chuck with built-in heater was prepared in the same manner, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 4 ⁇ m, and was subjected to the same separation test to find that separation took place at the bonded parts at a moment after 26 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
  • a powder of boron nitride and a powder of aluminum nitride were blended in a proportion of 3:1 followed by sintering under the conditions of 1900° C. and 200 kgf/cm 2 to prepare a disc having a diameter of 200 mm and a thickness of 1 mm consisting of a sintered blend body of boron nitride and aluminum nitride followed by a sand blasting treatment to impart both surfaces thereof with a surface roughness Rmax of 20 ⁇ m.
  • a pyrolytic graphite layer having a thickness of 100 ⁇ m was formed thereon by the pyrolysis of methane gas under the conditions of 2200° C. and 5 Torr, and an electrode pattern on one surface and a heater pattern on the other surface were mechanically worked to serve as the electrodes for electrostatic chuck and heat generating layer, respectively.
  • a sand blasting treatment imparted both these surfaces with a surface roughness Rmax of 7 ⁇ m.
  • ammonia and boron trichloride were reacted under the conditions of 1800° C. and 5 Torr to provide a covering layer of pyrolytic boron nitride by the chemical vapor-phase deposition method having a thickness of 200 ⁇ m thereon so as to prepare a ceramic electrostatic chuck with built-in heater.
  • This electrostatic chuck was subjected to 100 cycles of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
  • a ceramic electrostatic chuck with built-in heater was prepared by the same treatment, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 4 ⁇ m, and the same was subjected to separation test to find that separation took place at the bonded parts at a moment after 3 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
  • the present invention relates to a ceramic electrostatic chuck with built-in heater, having electrodes for electrostatic chucking made from an electroconductive ceramic bonded to a surface of a supporting substrate made from an electrically insulating ceramic, a heat-generating layer made from an electroconductive ceramic bonded to the other surface and a covering layer made from an electrically insulating ceramic provided thereon, the invention being characterized by each of the supporting substrate, electrodes for electrostatic chucking and heat generating layer having a surface roughness Rmax of 5 ⁇ m or larger.
  • electrodes for electrostatic chuck and heat generating layer are imparted with a surface roughness Rmax of 5 ⁇ m or larger, the physical bonding strength between them is increased by the anchoring effect, and this ceramic electrostatic chuck with built-in heater is imparted with the advantage that separation never takes place at the bonded parts so that the durability is very long.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Jigs For Machine Tools (AREA)
  • Ceramic Products (AREA)

Abstract

A ceramic electrostatic chuck with a built-in heater having electrodes of an electroconductive ceramic bonded to a surface of a supporting substrate of an electrically conducting ceramic. A heat generating layer of an electroconductive ceramic is bonded to the other surface of the supporting substrate and a covering layer of an electrically insulating ceramic is provided thereon. Each of the supporting substrate, electrode for the electrostatic chuck and heat generating layer has a surface roughness Rmax of 5 μm or larger.

Description

BACKGROUND OF THE INVENTION
The present invention relates to a ceramic electrostatic chuck with built-in heater or, more particularly, to a ceramic electrostatic chuck with built-in heater used in the temperature elevation and lowering step in a semiconductor process.
Where a heater of wound metal wire has been used for heating of a semiconductor wafer in the manufacturing process of semiconductor devices, contamination of the semiconductor wafer with metals may occur. As a solution to this problem, the use of an integral ceramic heater using a thin film of a ceramic as the heat generating body has been proposed (see official publication of Japanese Patent Kokai No. 4-124076). An electrostatic chuck has been used to fix the semiconductor wafer to the heater during heating at reduced atmospheric pressures. The material from which electrostatic chucks are made is increasingly changing from resins to ceramics as the semiconductor processing temperatures rise higher and higher (see official publication of Japanese Patent Kokai No. 52-67353 and official publication of Japanese Patent Kokai No. 59-124140). Recently, a ceramic electrostatic chuck with built-in heater, which is an integral combination of such a ceramic heater and ceramic electrostatic chuck, has also proposed (see official publication of Japanese Patent Kokai No. 4-358074, official publication of Japanese Patent Kokai No. 5-109876 and official publication of Japanese Patent Kokai No. 5-129210).
However, such a ceramic electrostatic chuck with built-in heater basically has a structure in which different kinds of ceramics are bonded together or, for example, a structure in which an electroconductor layer of graphite and an insulating layer of boron nitride are bonded to a substrate of boron nitride. Such structures have the problem that, during repeated temperature elevation and lowering, separation takes place in the bonded parts because of the thermal stress due to the difference in the thermal expansion coefficients of the materials.
SUMMARY OF THE INVENTION
The present invention relates to a ceramic electrostatic chuck with built-in heater which solves these disadvantages and defects. A ceramic electrostatic chuck with built-in heater according to the current invention has electrodes for electrostatic chucking made from an electroconductive ceramic bonded to one surface of a supporting substrate made from an electrically insulating ceramic, a heat generating layer made from an electroconductive ceramic bonded to the other surface and a covering layer of electrically insulating ceramic, where each of the supporting substrate, electrodes and heat generating layer has a surface roughness Rmax of 5 μm or larger. Ceramic electrostatic chucks of the present invention are further characterized in that a diffusion-preventing layer is bonded on to the covering layer.
The inventors have conducted extensive investigations on methods for the prevention of separation of the bonded parts in a heretofore known ceramic electrostatic chuck with a built-in heater. As a result, they have arrived at the discovery that, in a known ceramic electrostatic chuck with built-in heater having electroconductive ceramic electrodes for electrostatic chucking bonded to one surface of a supporting substrate made from an electrically insulating ceramic, a heat generating layer made from an electroconductive ceramic bonded to the other surface and a covering of electrically insulating ceramic, separation at the bonded parts never takes place when each of the supporting substrate, electrodes for electrostatic chuck and heat generating layer has a surface roughness of 5 μm or larger. This discovery leads to completion of the present invention after continued studies on the kinds of electrically insulating ceramic members and electroconductive ceramics for use in the ceramic electrostatic chuck with built-in heater, preparation method for the desired surface roughness and so on.
BRIEF DESCRIPTION OF THE DRAWING
Shown is a vertical cross sectional view of an example of the ceramic electrostatic chuck with built-in heater of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENT
A ceramic electrostatic chuck with built-in heater according to the current invention has electrodes for electrostatic chucking made from an electroconductive ceramic bonded to one surface of a supporting substrate made from an electrically insulating ceramic, a heat generating layer made from an electroconductive ceramic bonded to the other surface and a covering of electrically insulating ceramic, where each of the supporting substrate, electrodes and heat generating layer has a surface roughness Rmax of 5 μm or larger. An advantage is obtained therewith in that the ceramic electrostatic chuck with built-in heater is imparted with long durability because the bonded layers will not separate during repeated heating and cooling.
The ceramic electrostatic chuck with built-in heater of the present invention is formed by bonding electrodes for electrostatic chucking made from an electroconductive ceramic on to a surface of a supporting substrate made from an electrically insulating ceramic along with bonding of a heat generating layer made from an electroconductive ceramic on to the other surface and providing a covering layer made from an electrically insulating ceramic thereon so that this constitution per se is known. However, such a known ceramic electrostatic chuck with built-in heater has the very serious defect that, although the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer are integrally bonded together, they have differences in the thermal expansion coefficients. When heating and cooling are repeated between room temperature and about 1100° C., these thermal expansion differences cause separation between the various bonded layers, ultimately destroying the chuck.
In contrast thereto, when the surfaces of the supporting substrate, electrodes for electrostatic chucking and heat generating layer are surfaces having a roughness Rmax of at least 5 μm according to the present invention, the physical bonding strength between the supporting substrate and the electrodes for electrostatic chucking and heat generating layer bonded thereto and the physical bonding strength between the electrodes for electrostatic chucking or heat generating layer and the covering layer bonded thereto are increased by the anchoring effect, thereby preventing separation of the bonded parts even after repeated heating and cooling between room temperature and 1100° C. An advantage is obtained over a conventional ceramic electrostatic chuck with built-in heater because a ceramic electrostatic chuck with built-in heater according to the present invention is imparted with increased durability.
As is shown in FIG. 1, the ceramic electrostatic chuck with built-in heater of the present invention comprises a supporting substrate, electrodes for electrostatic chucking, heat generating layer and covering layer. This supporting substrate is made from an electrically insulating ceramic. Since the ceramic electrostatic chuck with built-in heater of the present invention has as an object use in semiconductor production and this process involves not only Si semiconductors but also III-V Group compound semiconductors, the supporting substrate is preferably made from boron nitride, a mixture of boron nitride and aluminum nitride or silicon nitride constituted from elements belonging to the same groups. Boron nitride can be obtained by sintering according to a known method or by the chemical vapor-phase deposition method obtained by reacting, for example, ammonia and boron trichloride at 1900° to 2000° C. and 10 Torr. The mixture of boron nitride and aluminum nitride can be obtained by sintering according to a known method. Silicon nitride can be obtained by sintering according to a known method or by the chemical vapor-phase deposition method obtained by reacting, for example, ammonia and silicon tetrachloride at 1400° to 1500° C. and 5 Torr.
The electrodes for electrostatic chucking and the heat generating layer are made from an electroconductive ceramic, preferably pyrolytic graphite. Pyrolytic graphite is particularly suited because of its very similar thermal expansion coefficient and relatively good adhesion to boron nitride and the like. Pyrolytic graphite can be obtained, for example, by subjecting methane gas to pyrolysis at 1900° to 2200° C. and 5 Torr. The electrodes and heat generating layer may also be constructed from silicon carbide by the chemical vapor-phase deposition method, for example, by reacting an organosilicon compound such as methyl trichlorosilane and the like under the conditions of 1250° C. and 3 Torr. The covering layer is made from an electrically insulating ceramic, preferably the same one as the supporting substrate and made by the chemical vapor-phase deposition method for purity.
In the present invention, it is essential that the surfaces of the supporting substrate, electrodes for electrostatic chucking and heat generating layer have a surface roughness of at least 5 μm, which can be achieved, for example, by subjecting those surfaces to a sand-blasting treatment, whereby the boron nitride, mixture of boron nitride and aluminum nitride or silicon nitride for the supporting substrate and the graphite or silicon carbide for the electrodes for electrostatic chuck and heat generating layer can be readily imparted with a surface roughness Rmax of 5 to 50 μm. After the surface of the supporting substrate is imparted with a surface roughness of at least 5 μm in this manner, the electrodes for electrostatic chucking and heat generating layer are bonded thereto. After imparting the electrodes for electrostatic chuck and heat generating layer with a surface roughness of at least 5 μm, the covering layer is bonded thereto to give the ceramic electrostatic chuck with built-in heater according to the present invention which has a long life without the troubles of separation of the component layers due to the changes in temperature. By virtue of the increased physical bonding strength between layers as a consequence of the anchoring effect due to this surface roughness, separation of the layers does not occur even when subjected, for example, to a test of repeated heating and cooling between room temperature and 1100° C.
The ceramic electrostatic chuck of the present invention having a covering layer made from boron nitride or a mixture of boron nitride and aluminum nitride, which features elements of the same Groups as the III-V Group metal containing semiconductor, prevents contamination of the semiconductor with an element of the Group IV. When the covering layer is made from silicon nitride, contamination of Si semiconductors by an element of Group III is prevented. Another problem in certain processes is the damage of the semiconductor device by leaking current from the electrostatic chuck so that the covering layer sometimes requires the high insulating resistance of boron nitride. However, when the covering layer is made from boron nitride, contamination of silicon semiconductors may take place in some cases by the diffusion of boron from the covering layer, especially in a high temperature process. This contamination can be prevented by providing a diffusion-preventing layer of silicon oxide, silicon nitride or the like on the covering layer.
Additional prevention of contamination is obtained when the boron nitride, silicon nitride, graphite and silicon carbide used in the ceramic electrostatic chuck are formed by the chemical vapor-phase deposition method, because they are of a high purity without containing impurities such as binders and the like as compared with those prepared by the sintering method.
In the following, Examples and Comparative Examples of the present invention are given.
EXAMPLE 1 AND COMPARATIVE EXAMPLE 1
A disc made from pyrolytic boron nitride having a diameter of 160 mm and a thickness of 1 mm was prepared by reacting ammonia and boron trichloride under the conditions of 2000° C. and 10 Torr followed by a sand blasting treatment to impart both surfaces with a surface roughness Rmax of 5 μm.
Next, a pyrolytic graphite layer having a thickness of 40 μm was formed thereon by the pyrolysis of methane gas under the conditions of 2200° C. and 5 Torr which was mechanically worked into the electrode pattern on one surface and the heater pattern on the other surface to serve as the electrodes for electrostatic chuck and heat generating layer, respectively, followed by a sand blasting treatment to impart the surfaces thereof with a surface roughness Rmax of 5 μm.
Finally, ammonia and boron trichioride were reacted as above to provide a covering layer of pyrolytic boron nitride having a thickness of 100 μm thereon so as to prepare a ceramic electrostatic chuck with built-in heater. This electrostatic chuck was subjected to 100 cycle of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
For comparison, a ceramic electrostatic chuck with built-in heater was prepared in the same manner, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 3 μm, and was subjected to the same separation test to find that separation took place at the bonded parts at a moment after 9 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
EXAMPLE 2 AND COMPARATIVE EXAMPLE 2
A disc of silicon nitride having a diameter of 160 mm and a thickness of 1 mm was prepared by the chemical vapor-phase deposition method by reacting ammonia and silicon tetrachloride under the conditions of 1400° C. and 5 Torr, followed by a sand blasting treatment so as to impart both surfaces thereof with a surface roughness Rmax of 6 μm.
Next, a silicon carbide layer having a thickness of 100 μm was formed by the chemical vapor-phase deposition method thereon by the pyrolysis of methyl trichloro silane under the conditions of 1250° C. and 3 Torr, and an electrode pattern on one surface and a heater pattern on the other surface were mechanically worked to serve as the electrodes for electrostatic chucking and heat generating layer, respectively. A sand blasting treatment imparted the surfaces thereof with a surface roughness Rmax of 7 μm.
Finally, ammonia and silicon tetrachloride were reacted as above provide a covering layer of silicon nitride by the chemical vapor-phase deposition method having a thickness of 150 μm thereon so as to prepare a ceramic electrostatic chuck with built-in heater. This electrostatic chuck was subjected to 100 cycles of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
For comparison, a ceramic electrostatic chuck with built-in heater was prepared in the same manner, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 2 μm and the same was subjected to the same separation test to find that separation took place at the bonded parts at a moment after 5 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
EXAMPLE 3 AND COMPARATIVE EXAMPLE 3
A disc of silicon nitride having a diameter of 160 mm and a thickness of 1 mm was prepared by the chemical vapor-phase deposition method by reacting ammonia and silicon tetrachloride under the conditions of 1400° C. and 5 Torr followed by a sand blasting treatment so as to impart both surfaces thereof with a surface roughness Rmax of 9 μm.
Finally, ammonia and silicon tetrachloride were reacted as above to provide a covering layer of silicon nitride by the chemical vapor-phase deposition method having a thickness of 100 μm thereon so as to prepare a ceramic electrostatic chuck with built-in heater. This electrostatic chuck was subjected to 100 cycles of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
For comparison, a ceramic electrostatic chuck with built-in heater was prepared in the same manner, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 4 μm, and was subjected to the same separation test to find that separation took place at the bonded parts at a moment after 26 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
EXAMPLE 4 AND COMPARATIVE EXAMPLE 4
A powder of boron nitride and a powder of aluminum nitride were blended in a proportion of 3:1 followed by sintering under the conditions of 1900° C. and 200 kgf/cm2 to prepare a disc having a diameter of 200 mm and a thickness of 1 mm consisting of a sintered blend body of boron nitride and aluminum nitride followed by a sand blasting treatment to impart both surfaces thereof with a surface roughness Rmax of 20 μm.
Next, a pyrolytic graphite layer having a thickness of 100 μm was formed thereon by the pyrolysis of methane gas under the conditions of 2200° C. and 5 Torr, and an electrode pattern on one surface and a heater pattern on the other surface were mechanically worked to serve as the electrodes for electrostatic chuck and heat generating layer, respectively. A sand blasting treatment imparted both these surfaces with a surface roughness Rmax of 7 μm.
Finally, ammonia and boron trichloride were reacted under the conditions of 1800° C. and 5 Torr to provide a covering layer of pyrolytic boron nitride by the chemical vapor-phase deposition method having a thickness of 200 μm thereon so as to prepare a ceramic electrostatic chuck with built-in heater. This electrostatic chuck was subjected to 100 cycles of temperature elevation and temperature lowering from room temperature to 1100° C. without causing separation of the supporting substrate, electrodes for electrostatic chuck, heat generating layer and covering layer thereof at the bonded parts.
For comparison, a ceramic electrostatic chuck with built-in heater was prepared by the same treatment, except that the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer had a surface roughness Rmax of 4 μm, and the same was subjected to separation test to find that separation took place at the bonded parts at a moment after 3 cycles of temperature elevation and temperature lowering between room temperature and 1100° C.
The present invention relates to a ceramic electrostatic chuck with built-in heater, having electrodes for electrostatic chucking made from an electroconductive ceramic bonded to a surface of a supporting substrate made from an electrically insulating ceramic, a heat-generating layer made from an electroconductive ceramic bonded to the other surface and a covering layer made from an electrically insulating ceramic provided thereon, the invention being characterized by each of the supporting substrate, electrodes for electrostatic chucking and heat generating layer having a surface roughness Rmax of 5 μm or larger. Since the surfaces of the supporting substrate, electrodes for electrostatic chuck and heat generating layer are imparted with a surface roughness Rmax of 5 μm or larger, the physical bonding strength between them is increased by the anchoring effect, and this ceramic electrostatic chuck with built-in heater is imparted with the advantage that separation never takes place at the bonded parts so that the durability is very long.

Claims (6)

We claim:
1. A ceramic electrostatic chuck having a built-in heater comprising a supporting substrate having opposite first and second surfaces, a heat generating layer of an electroconductive ceramic bonded to the first surface, an electrode layer bonded to the second surface so as to sandwich the substrate between the heat generating layer and the electrode layer, and a covering layer of an electrically insulating ceramic covering said electrode layer and said heat generating layer, wherein said electrode layer and said heat generating layer have a surface roughness Rmax of 5 μm or larger.
2. The ceramic electrostatic chuck with built-in heater described in claim 1 wherein said supporting substrate and said covering layer are made from boron nitride, a mixture of boron nitride and aluminum nitride or silicon nitride and the said electrodes for electrostatic chuck and said heat generating layer are made from graphite or silicon carbide.
3. The ceramic electrostatic chuck with built-in heater described in claim 1 wherein a diffusion-preventing layer is bonded on to the said covering layer.
4. The ceramic electrostatic chuck with built-in heater described in claim 3 wherein the diffusion-preventing layer is made from silicon oxide or silicon nitride.
5. The ceramic electrostatic chuck with built-in heater described in claim 2 wherein a diffusion-preventing layer is bonded on to the said covering layer.
6. The ceramic electrostatic chuck with built-in heater described in claim 2 wherein the diffusion-preventing layer is made from silicon oxide or silicon nitride.
US08/364,196 1993-12-27 1994-12-27 Ceramic electrostatic chuck with built-in heater Expired - Lifetime US5665260A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP33076493 1993-12-27
JP5-330764 1993-12-27
JP31637494A JPH07307377A (en) 1993-12-27 1994-12-20 Ceramic heater with electrostatic chuck
JP6-316374 1994-12-20

Publications (1)

Publication Number Publication Date
US5665260A true US5665260A (en) 1997-09-09

Family

ID=26568634

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/364,196 Expired - Lifetime US5665260A (en) 1993-12-27 1994-12-27 Ceramic electrostatic chuck with built-in heater

Country Status (4)

Country Link
US (1) US5665260A (en)
JP (1) JPH07307377A (en)
KR (1) KR950021343A (en)
TW (1) TW287294B (en)

Cited By (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851641A (en) * 1994-11-22 1998-12-22 Tomoegawa Paper Co., Ltd. Electrostatic chucking device
US5886866A (en) * 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing
US5901030A (en) * 1997-12-02 1999-05-04 Dorsey Gage, Inc. Electrostatic chuck employing thermoelectric cooling
EP0929205A2 (en) * 1998-01-09 1999-07-14 Ngk Insulators, Ltd. A heater and a method of manufacturing the same
EP0803900A3 (en) * 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6037572A (en) * 1997-02-26 2000-03-14 White Consolidated Industries, Inc. Thin film heating assemblies
WO2001011922A1 (en) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Ceramic heater
WO2001011923A1 (en) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Ceramic heater
WO2001039552A1 (en) * 1999-11-24 2001-05-31 Ibiden Co., Ltd. Ceramic heater
WO2001038600A1 (en) * 1999-11-23 2001-05-31 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
EP1133214A1 (en) * 1999-09-07 2001-09-12 Ibiden Co., Ltd. Ceramic heater
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
WO2002003435A1 (en) * 2000-07-04 2002-01-10 Ibiden Co., Ltd. Hot plate for semiconductor manufacture and testing
EP1193751A1 (en) * 1999-04-06 2002-04-03 Tokyo Electron Limited Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage
WO2002045138A1 (en) * 2000-11-29 2002-06-06 Ibiden Co., Ltd. Ceramic heater for semiconductor manufacturing and inspecting devices
US6462928B1 (en) 1999-05-07 2002-10-08 Applied Materials, Inc. Electrostatic chuck having improved electrical connector and method
WO2002091457A1 (en) * 1999-12-09 2002-11-14 Ibiden Co., Ltd. Ceramic plate for semiconductor producing/inspecting apparatus
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
US20020179592A1 (en) * 2000-07-19 2002-12-05 Yasuji Hiramatsu Semiconductor manufacturing/testing ceramic heater, production method for the ceramic heater and production system for the ceramic heater
WO2002099855A1 (en) * 2000-05-24 2002-12-12 Ibiden Co., Ltd. Ceramic heater for semiconductor producing and inspecting device and hot plate unit using the ceramic heater
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
WO2002041370A3 (en) * 2000-11-16 2003-02-20 Mattson Tech Inc Apparatuses and methods for resistively heating a thermal processing system
US6535371B1 (en) 1997-12-02 2003-03-18 Takashi Kayamoto Layered ceramic/metallic assembly, and an electrostatic chuck using such an assembly
US6538872B1 (en) 2001-11-05 2003-03-25 Applied Materials, Inc. Electrostatic chuck having heater and method
US20030062358A1 (en) * 2000-07-19 2003-04-03 Atsushi Ito Semiconductor manufacturing/testing ceramic heater
US6554907B2 (en) 2001-01-02 2003-04-29 Applied Materials, Inc. Susceptor with internal support
US20030136776A1 (en) * 1999-11-30 2003-07-24 Ibiden Co., Ltd. Ceramic heater
US20030170415A1 (en) * 2000-03-13 2003-09-11 Ibiden Co., Ltd. Ceramic substrate
US6623563B2 (en) * 2001-01-02 2003-09-23 Applied Materials, Inc. Susceptor with bi-metal effect
US20030234248A1 (en) * 2002-06-20 2003-12-25 Shin-Etsu Chemical Co., Ltd. Heating apparatus with electrostatic attraction function
KR100407708B1 (en) * 1996-02-01 2004-01-28 동경 엘렉트론 주식회사 A retractable structure in which the object to be processed is placed
US20040035846A1 (en) * 2000-09-13 2004-02-26 Yasuji Hiramatsu Ceramic heater for semiconductor manufacturing and inspecting equipment
US20040060925A1 (en) * 2000-11-24 2004-04-01 Yanling Zhou Ceramic heater and manufacturing method of ceramic heater
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
EP1475821A2 (en) * 2003-05-09 2004-11-10 Shin-Etsu Chemical Company, Ltd. Wafer heating apparatus having electrostatic adsorption function
US6825555B2 (en) 2000-06-16 2004-11-30 Ibiden Co., Ltd. Hot plate
US6835916B2 (en) 1999-08-09 2004-12-28 Ibiden, Co., Ltd Ceramic heater
EP1513191A2 (en) * 2003-08-27 2005-03-09 Shin-Etsu Chemical Company, Ltd. Heating apparatus having electrostatic adsorption function
US6887316B2 (en) * 2000-04-14 2005-05-03 Ibiden Co., Ltd. Ceramic heater
US20050167422A1 (en) * 2002-10-24 2005-08-04 Yoshifumi Kachi Ceramics heater for semiconductor production system
US20050172829A1 (en) * 2002-05-16 2005-08-11 Narutoshi Shimatani Cooking top plate
US6951587B1 (en) * 1999-12-01 2005-10-04 Tokyo Electron Limited Ceramic heater system and substrate processing apparatus having the same installed therein
US20060002053A1 (en) * 2004-03-31 2006-01-05 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
KR100553444B1 (en) * 2000-04-05 2006-02-20 스미토모 오사카 세멘토 가부시키가이샤 Susceptors and the methods of manufacturing them
US20060088692A1 (en) * 2004-10-22 2006-04-27 Ibiden Co., Ltd. Ceramic plate for a semiconductor producing/examining device
US20070025607A1 (en) * 2003-07-31 2007-02-01 Yoshitomo Takaishi Bone mineral density evaluation device and bone mineral density evaluation method
US20080017104A1 (en) * 2006-07-20 2008-01-24 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080089001A1 (en) * 2006-10-13 2008-04-17 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
US20100193501A1 (en) * 2009-02-04 2010-08-05 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
US20110147364A1 (en) * 2009-04-07 2011-06-23 Anbe Yoshinobu Heating apparatus for x-ray inspection
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
CN103369750A (en) * 2013-08-08 2013-10-23 罗日良 Heating tube molding process

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077182A (en) * 1999-06-09 2001-03-23 Ibiden Co Ltd Ceramic substrate for manufacturing and checking semiconductor
DE60021848T2 (en) * 1999-11-19 2006-06-08 Ibiden Co., Ltd. CERAMIC HEATER
JP4278046B2 (en) * 2003-11-10 2009-06-10 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 Electrostatic chuck with heater mechanism
KR100794960B1 (en) * 2006-06-07 2008-01-16 (주)나노테크 Hybrid heater manufacturing method
JP5543123B2 (en) * 2009-03-30 2014-07-09 大日本スクリーン製造株式会社 Heat treatment susceptor and heat treatment apparatus
JP6017781B2 (en) * 2011-12-07 2016-11-02 新光電気工業株式会社 Substrate temperature adjustment fixing device and manufacturing method thereof
CN103428909A (en) * 2013-07-12 2013-12-04 罗日良 Heating tube forming process
JP6708518B2 (en) * 2016-08-09 2020-06-10 新光電気工業株式会社 Substrate fixing device and manufacturing method thereof
JP6587223B1 (en) * 2018-07-30 2019-10-09 Toto株式会社 Electrostatic chuck
JP7116241B2 (en) * 2019-02-21 2022-08-09 京セラ株式会社 sample holder

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900396A (en) * 1987-08-19 1990-02-13 Agency Of Industrial Science And Technology Method of forming modified layer and pattern
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5166856A (en) * 1991-01-31 1992-11-24 International Business Machines Corporation Electrostatic chuck with diamond coating
US5328761A (en) * 1990-10-05 1994-07-12 Sumitomo Electric Industries, Ltd. Diamond-coated hard material, throwaway insert and a process for the production thereof
US5343022A (en) * 1992-09-29 1994-08-30 Advanced Ceramics Corporation Pyrolytic boron nitride heating unit
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750736B2 (en) * 1990-12-25 1995-05-31 日本碍子株式会社 Wafer heating apparatus and manufacturing method thereof
JPH04345019A (en) * 1991-05-22 1992-12-01 Toshiba Ceramics Co Ltd Semiconductor-processing member
JP3081279B2 (en) * 1991-06-03 2000-08-28 電気化学工業株式会社 Hot plate
JPH0513555A (en) * 1991-07-01 1993-01-22 Toto Ltd Electrostatic chuck and voltage application method to electrostatic chuck

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900396A (en) * 1987-08-19 1990-02-13 Agency Of Industrial Science And Technology Method of forming modified layer and pattern
US5328761A (en) * 1990-10-05 1994-07-12 Sumitomo Electric Industries, Ltd. Diamond-coated hard material, throwaway insert and a process for the production thereof
US5166856A (en) * 1991-01-31 1992-11-24 International Business Machines Corporation Electrostatic chuck with diamond coating
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5343022A (en) * 1992-09-29 1994-08-30 Advanced Ceramics Corporation Pyrolytic boron nitride heating unit
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck

Cited By (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851641A (en) * 1994-11-22 1998-12-22 Tomoegawa Paper Co., Ltd. Electrostatic chucking device
KR100407708B1 (en) * 1996-02-01 2004-01-28 동경 엘렉트론 주식회사 A retractable structure in which the object to be processed is placed
EP0803900A3 (en) * 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6037572A (en) * 1997-02-26 2000-03-14 White Consolidated Industries, Inc. Thin film heating assemblies
US5901030A (en) * 1997-12-02 1999-05-04 Dorsey Gage, Inc. Electrostatic chuck employing thermoelectric cooling
US6535371B1 (en) 1997-12-02 2003-03-18 Takashi Kayamoto Layered ceramic/metallic assembly, and an electrostatic chuck using such an assembly
EP0929205A2 (en) * 1998-01-09 1999-07-14 Ngk Insulators, Ltd. A heater and a method of manufacturing the same
EP0929205A3 (en) * 1998-01-09 1999-09-01 Ngk Insulators, Ltd. A heater and a method of manufacturing the same
US6204489B1 (en) 1998-01-09 2001-03-20 Ngk Insulators, Ltd. Electrically heated substrate with multiple ceramic parts each having different volume restivities
US6294771B2 (en) 1998-01-09 2001-09-25 Ngk Insulators, Ltd. Electrically heated substrate with multiple ceramic parts each having different volume resitivities
US5886866A (en) * 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing
EP1193751A1 (en) * 1999-04-06 2002-04-03 Tokyo Electron Limited Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage
US7337745B1 (en) 1999-04-06 2008-03-04 Tokyo Electron Limited Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor
EP1193751A4 (en) * 1999-04-06 2005-02-09 Tokyo Electron Ltd Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage
US6462928B1 (en) 1999-05-07 2002-10-08 Applied Materials, Inc. Electrostatic chuck having improved electrical connector and method
US6310755B1 (en) * 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
WO2001011923A1 (en) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Ceramic heater
WO2001011922A1 (en) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Ceramic heater
US6861620B2 (en) 1999-08-09 2005-03-01 Ibiden Co., Ltd. Ceramic heater
US20040045951A1 (en) * 1999-08-09 2004-03-11 Ibiden Co., Ltd. Ceramic heater
US6710307B2 (en) 1999-08-09 2004-03-23 Ibiden Co., Ltd. Ceramic heater
EP1437917A1 (en) * 1999-08-09 2004-07-14 Ibiden Co., Ltd. Ceramic heater
US6465763B1 (en) 1999-08-09 2002-10-15 Ibiden Co., Ltd. Ceramic heater
US6835916B2 (en) 1999-08-09 2004-12-28 Ibiden, Co., Ltd Ceramic heater
EP1133214A1 (en) * 1999-09-07 2001-09-12 Ibiden Co., Ltd. Ceramic heater
US6452137B1 (en) 1999-09-07 2002-09-17 Ibiden Co., Ltd. Ceramic heater
EP1133214A4 (en) * 1999-09-07 2002-01-30 Ibiden Co Ltd Ceramic heater
WO2001038600A1 (en) * 1999-11-23 2001-05-31 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
US6410172B1 (en) 1999-11-23 2002-06-25 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
US20040206746A1 (en) * 1999-11-24 2004-10-21 Ibiden Co., Ltd. Ceramic heater
WO2001039552A1 (en) * 1999-11-24 2001-05-31 Ibiden Co., Ltd. Ceramic heater
US20030136776A1 (en) * 1999-11-30 2003-07-24 Ibiden Co., Ltd. Ceramic heater
US6951587B1 (en) * 1999-12-01 2005-10-04 Tokyo Electron Limited Ceramic heater system and substrate processing apparatus having the same installed therein
WO2002091457A1 (en) * 1999-12-09 2002-11-14 Ibiden Co., Ltd. Ceramic plate for semiconductor producing/inspecting apparatus
US6884972B2 (en) 1999-12-09 2005-04-26 Ibiden Co., Ltd. Ceramic plate for a semiconductor producing/inspecting apparatus
US6494955B1 (en) 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
US20030170415A1 (en) * 2000-03-13 2003-09-11 Ibiden Co., Ltd. Ceramic substrate
KR100553444B1 (en) * 2000-04-05 2006-02-20 스미토모 오사카 세멘토 가부시키가이샤 Susceptors and the methods of manufacturing them
US6887316B2 (en) * 2000-04-14 2005-05-03 Ibiden Co., Ltd. Ceramic heater
WO2002099855A1 (en) * 2000-05-24 2002-12-12 Ibiden Co., Ltd. Ceramic heater for semiconductor producing and inspecting device and hot plate unit using the ceramic heater
US20050258164A1 (en) * 2000-06-16 2005-11-24 Ibiden Co., Ltd. Hot plate
US6825555B2 (en) 2000-06-16 2004-11-30 Ibiden Co., Ltd. Hot plate
WO2002003435A1 (en) * 2000-07-04 2002-01-10 Ibiden Co., Ltd. Hot plate for semiconductor manufacture and testing
US20050023269A1 (en) * 2000-07-04 2005-02-03 Ibiden Co., Ltd. Hot plate for semiconductor producing/examining device
US6809299B2 (en) 2000-07-04 2004-10-26 Ibiden Co., Ltd. Hot plate for semiconductor manufacture and testing
US6967312B2 (en) 2000-07-19 2005-11-22 Ibiden Co., Ltd. Semiconductor manufacturing/testing ceramic heater, production method for the ceramic heater and production system for the ceramic heater
US20020179592A1 (en) * 2000-07-19 2002-12-05 Yasuji Hiramatsu Semiconductor manufacturing/testing ceramic heater, production method for the ceramic heater and production system for the ceramic heater
US20030062358A1 (en) * 2000-07-19 2003-04-03 Atsushi Ito Semiconductor manufacturing/testing ceramic heater
US20040035846A1 (en) * 2000-09-13 2004-02-26 Yasuji Hiramatsu Ceramic heater for semiconductor manufacturing and inspecting equipment
KR100847367B1 (en) * 2000-11-16 2008-07-21 맛선 테크놀러지, 인코포레이티드 Apparatus and method for resistively heating a thermal processing system
CN1299322C (en) * 2000-11-16 2007-02-07 麦特逊技术股份有限公司 Apparatuses and methods for resistively heating thermal processing system
WO2002041370A3 (en) * 2000-11-16 2003-02-20 Mattson Tech Inc Apparatuses and methods for resistively heating a thermal processing system
US7176417B2 (en) 2000-11-16 2007-02-13 Mattson Technology, Inc. Apparatuses and methods for resistively heating a thermal processing system
US20040060925A1 (en) * 2000-11-24 2004-04-01 Yanling Zhou Ceramic heater and manufacturing method of ceramic heater
US6924464B2 (en) * 2000-11-24 2005-08-02 Ibiden Co., Ltd. Ceramic heater and manufacturing method of ceramic heater
US20040026403A1 (en) * 2000-11-29 2004-02-12 Satoru Kariya Ceramic heater for semiconductor manufacturing and inspecting devices
WO2002045138A1 (en) * 2000-11-29 2002-06-06 Ibiden Co., Ltd. Ceramic heater for semiconductor manufacturing and inspecting devices
US6554907B2 (en) 2001-01-02 2003-04-29 Applied Materials, Inc. Susceptor with internal support
US6623563B2 (en) * 2001-01-02 2003-09-23 Applied Materials, Inc. Susceptor with bi-metal effect
US6538872B1 (en) 2001-11-05 2003-03-25 Applied Materials, Inc. Electrostatic chuck having heater and method
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US7718929B2 (en) * 2002-05-16 2010-05-18 Nippon Electric Glass Co., Ltd. Cooking top plate
US20050172829A1 (en) * 2002-05-16 2005-08-11 Narutoshi Shimatani Cooking top plate
US7208703B2 (en) * 2002-05-16 2007-04-24 Nippon Electric Glass Co., Ltd. Cooking top plate
US20070056961A1 (en) * 2002-05-16 2007-03-15 Narutoshi Shimatani Cooking top plate
EP1376660A2 (en) * 2002-06-20 2004-01-02 Shin-Etsu Chemical Co., Ltd. Wafer heating apparatus with electrostatic attraction function
US20030234248A1 (en) * 2002-06-20 2003-12-25 Shin-Etsu Chemical Co., Ltd. Heating apparatus with electrostatic attraction function
US6917021B2 (en) * 2002-06-20 2005-07-12 Shin-Etsu Chemical Co., Ltd. Heating apparatus with electrostatic attraction function
EP1376660A3 (en) * 2002-06-20 2007-05-02 Shin-Etsu Chemical Co., Ltd. Wafer heating apparatus with electrostatic attraction function
US20050167422A1 (en) * 2002-10-24 2005-08-04 Yoshifumi Kachi Ceramics heater for semiconductor production system
EP1475821A2 (en) * 2003-05-09 2004-11-10 Shin-Etsu Chemical Company, Ltd. Wafer heating apparatus having electrostatic adsorption function
EP1475821A3 (en) * 2003-05-09 2005-12-14 Shin-Etsu Chemical Company, Ltd. Wafer heating apparatus having electrostatic adsorption function
US20070025607A1 (en) * 2003-07-31 2007-02-01 Yoshitomo Takaishi Bone mineral density evaluation device and bone mineral density evaluation method
EP1513191A3 (en) * 2003-08-27 2006-03-22 Shin-Etsu Chemical Company, Ltd. Heating apparatus having electrostatic adsorption function
EP1513191A2 (en) * 2003-08-27 2005-03-09 Shin-Etsu Chemical Company, Ltd. Heating apparatus having electrostatic adsorption function
US7480129B2 (en) 2004-03-31 2009-01-20 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
US20090201622A1 (en) * 2004-03-31 2009-08-13 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US20060002053A1 (en) * 2004-03-31 2006-01-05 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
US7907384B2 (en) 2004-03-31 2011-03-15 Applied Materials, Inc. Detachable electrostatic chuck for supporting a substrate in a process chamber
US20060088692A1 (en) * 2004-10-22 2006-04-27 Ibiden Co., Ltd. Ceramic plate for a semiconductor producing/examining device
US8663391B2 (en) 2006-04-27 2014-03-04 Applied Materials, Inc. Electrostatic chuck having a plurality of heater coils
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20080017104A1 (en) * 2006-07-20 2008-01-24 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US10257887B2 (en) 2006-07-20 2019-04-09 Applied Materials, Inc. Substrate support assembly
US9883549B2 (en) 2006-07-20 2018-01-30 Applied Materials, Inc. Substrate support assembly having rapid temperature control
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
US20080089001A1 (en) * 2006-10-13 2008-04-17 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
US8405005B2 (en) 2009-02-04 2013-03-26 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
US20100193501A1 (en) * 2009-02-04 2010-08-05 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
US9161392B2 (en) * 2009-04-07 2015-10-13 Yoshinobu ANBE Heating apparatus for X-ray inspection
US20110147364A1 (en) * 2009-04-07 2011-06-23 Anbe Yoshinobu Heating apparatus for x-ray inspection
CN103369750A (en) * 2013-08-08 2013-10-23 罗日良 Heating tube molding process

Also Published As

Publication number Publication date
TW287294B (en) 1996-10-01
KR950021343A (en) 1995-07-26
JPH07307377A (en) 1995-11-21

Similar Documents

Publication Publication Date Title
US5665260A (en) Ceramic electrostatic chuck with built-in heater
US5663865A (en) Ceramic electrostatic chuck with built-in heater
US5566043A (en) Ceramic electrostatic chuck with built-in heater
US5606484A (en) Ceramic electrostatic chuck with built-in heater
US7416793B2 (en) Electrostatic chuck and manufacturing method for the same, and alumina sintered member and manufacturing method for the same
JP4476701B2 (en) Manufacturing method of sintered body with built-in electrode
TWI413438B (en) Supporting unit for semiconductor manufacturing device and semiconductor manufacturing device with supporting unit installed
US7679880B2 (en) Electrostatic chuck and manufacturing method thereof
EP0399877A1 (en) Bonding of ceramic parts
US7414823B2 (en) Holder for use in semiconductor or liquid-crystal manufacturing device and semiconductor or liquid-crystal manufacturing device in which the holder is installed
US5350720A (en) Triple-layered ceramic heater
JPH0750736B2 (en) Wafer heating apparatus and manufacturing method thereof
US6689984B2 (en) Susceptor with built-in electrode and manufacturing method therefor
JP2533679B2 (en) Plate-shaped ceramic heater and method for manufacturing the same
KR20080059501A (en) Ceramic Heater with Electrostatic Chuck
JP3481717B2 (en) Wafer heating device with electrostatic suction function
JP3297571B2 (en) Electrostatic chuck
JP3057670B2 (en) Multilayer ceramic heater
JP3545866B2 (en) Wafer holding device
JPH07297267A (en) Ceramic heater with electrostatic chuck
JP3519744B2 (en) Multilayer ceramic heater
JP2915750B2 (en) Ceramic heater with electrostatic chuck
JP3941542B2 (en) Hermetic bonding structure of ceramics and metal and apparatus parts having the structure
JP2000012665A (en) Ceramics component
JP3869160B2 (en) Multilayer ceramic heater and manufacturing method thereof

Legal Events

Date Code Title Description
AS Assignment

Owner name: SHIN-ETSU CHEMICAL CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KAWADA, NOBUO;KANO, SHOJI;HAGIWARA, KOJI;AND OTHERS;REEL/FRAME:007385/0561

Effective date: 19941221

Owner name: TOKYO ELECTORON LIMITED, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KAWADA, NOBUO;KANO, SHOJI;HAGIWARA, KOJI;AND OTHERS;REEL/FRAME:007385/0561

Effective date: 19941221

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载