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US3156596A - Method for polishing gallium arsenide - Google Patents

Method for polishing gallium arsenide Download PDF

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US3156596A
US3156596A US163126A US16312661A US3156596A US 3156596 A US3156596 A US 3156596A US 163126 A US163126 A US 163126A US 16312661 A US16312661 A US 16312661A US 3156596 A US3156596 A US 3156596A
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gallium arsenide
bromine
polishing
inch
crystal
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US163126A
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Miles V Sullivan
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AT&T Corp
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Bell Telephone Laboratories Inc
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Priority to US163126A priority Critical patent/US3156596A/en
Priority to US163094A priority patent/US3262825A/en
Priority to GB43788/62A priority patent/GB945933A/en
Priority to GB43790/62A priority patent/GB1025177A/en
Priority to FR916188A priority patent/FR1339898A/en
Priority to BE625119D priority patent/BE625119A/xx
Priority to NL286503D priority patent/NL286503A/xx
Priority to DEW33527A priority patent/DE1278801B/en
Priority to DE19621546063 priority patent/DE1546063B2/en
Priority to SE14116/62A priority patent/SE307492B/xx
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Publication of US3156596A publication Critical patent/US3156596A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Definitions

  • this invention is directed to a technique for polishing crystals of gallium arsenide with a solution comprising a mixture of bromine and methanol, such solution being particularly well suited as a substitute for or supplement to the usual mechanical polishing procedure for these crystals.
  • a technique for polishing the surfaces of gallium arsenide crystals with a bromine-containing methanol solution, thereby producing surfaces which are smooth to better than 0.5 microinch, flat to better than 0.0001 inch per inch and free of mechanical damage.
  • etching is conducted in conjunction with a mechanical stirring mechanism resulting in agitation proximate the surface to be etched.
  • the inventive technique involves mounting the gallium arsenide on a rotatable disk such that the surface of interest is exposed.
  • a second rotatable disk optionally covered by a low-pile cloth is positioned proximate the surface of interest such that the pile of the cloth is almost in contact with such surface.
  • the second disk is rotated about an axis of rotation parallel to but not coincident with that about which the first disk is rotated.
  • the bromine-containing methanol solution is provided to a level above the pile of the cloth for contacting the surface to be polished.
  • FIG. 1 is a perspective view, partially in cross-section
  • FIG. 2 is an enlarged view, partially in cross-section, of a portion of the surface of a gallium arsenide crystal and the stirring mechanism of the apparatus employed.
  • FIG.l there is shown a cylindrical container 11 having a centrally located rotating mechanism 12, typically an electric motor, secured to the container by supports 13.
  • a metallic shaft 14 transmits angular motion from the rotating mechanism to a. glass stirring disk 15 positioned immediately below the annular lip 16 of the cylindrical container 11.
  • the glass stirring disk is covered by a low-pile cloth 17.
  • the diskshaped block 18 is secured to a holder 20 by a suitable connection which allows block 18 to rotate about an axis of rotation 22 which is parallel to but eccentrically disposed to shaft 14.
  • a plurality of gallium arsenide slices 23 are aflixed to the surface 24 of block 18 such that the surfaces 25 of slices 23 are in contact with the pile 26 of the low-pile cloth 17 which may also be a material such as Dextilose paper which is obtained commercially from the Dexter Paper Company.
  • the term low-pile refers to any cloth or high wet strength paper having a pile of height of approximately 0.030 inch or less.
  • Tube 28 provides a continuous supply of solution. The level of the solution is kept sufficiently high that the surface of interest is wet by it.
  • slices 23 are made to rotate independently of stirring disk 15, or are dragged by the rotation of the disk. In either instance, the result is a continuously changing direction of polishing for slices 23 because of the eccentric arrangement of the axis of rotation 22 and the shaft 14.
  • radiation source 29 is suitably positioned in the apparatus shown in FIG. 1 proximate glass disk 15. It will be appreciated by those skilled in the art that the exact location of such source may be varied as desired.
  • the solution employed in the present technique comprises methanol and bromine wherein the bromine is present in an amount within the range of 0.001 to 0.05 percent by volume of the total solution.
  • concentrations beyond 0.05 percent adversely alfects the polishing in that pitting in the gallium arsenide slice is increased.
  • the lower limit of 0.001 percent of bromine by volume of the total solution is not absolute and is dictated by considerations of etching rate.
  • etching solutions herein contain a maximum bromine content of 0.0025 percent and are suitable for polishing all faces of gallium arsenide including the (m) and (111) and such range is preferred for the practice of this invention. However, higher concentrations up to 0.05 percent which are unsuitable on the (111) face are useful and often desirable for polishing the other faces of this crystalline system.
  • FIG. 2 shows on an expanded scale the spatial relations of the various elements for optimum operation.
  • the spatial relations are such that the pile 34 is separated advantageously from the high points 36 of the surface a distance 33 which is of the same order as magnitude, preferably between three times and a third, as the depth 38 of an average depression below the surface.
  • the pile makes grazing contact with the high points of the surface.
  • Example I Three slices of (TE) gallium arsenide, approximately 0.5 inch by 0.5 inch by 0.02 inch lapped with 1950 mesh alumina were affixed to the surface of block 18 in the apparatus shown in FIG. 1.
  • Disk 15 was an 8 inch glass cylinder having Dextilose paper attached to one surface thereof.
  • a bromine-methanol solution containing 0.05 percent bromine by volume of solution was admitted to container 11 in an amount sufficient to wet the surfaces of the gallium arsenide.
  • Disk 15 was rotated at 72 revolutions per minute while illuminated by a 500 watt tungsten filament. After 25 minutes the thickness of the slices was reduced from approximately 0.02 to 0.019 inch, the smoothness of the surfaces changed from 4.0 to 0.1 microinch and the flatness was unchanged from its original 0.0001 inch per inch on all but the outer 10 percent of the surface.
  • Example II Three slices of (111) gallium arsenide, approximately 0.5 inch by inch by 0.02 inch were lapped with 1950 mesh alumina and then with 0.3 micron alumina and were affixed to the surface of block 18 in the apparatus shown in FIG. 1. The procedure of Example I was next repeated with the exception that a bromine-methanol solutioncontaining 0.0025 percent bromine by volume of total solution was employed. After 40 minutes the thickness of the slices was reduced from approximately 0.02 to 0.0199 inch, the smoothness of the slice changed from 0.5 to 0.1 microinch and the flatness was unchanged from its original 0.0001 inch per inch on all but the outer percent of the surface.
  • the method of polishing a crystal of gallium arsenide which comprises the steps of wetting said crystal with a mixture consisting essentially of bromine and methanol, said bromine being present in an amount within the range of 0.001 to 0.05 percent by volume of the total solution and stirring along a plane substantially parallel to and at a distance from the high points of said crystal of the order of the depth of the discontinuities of said crystals.
  • the method of polishing the (111) face of gallium arsenide which comprises the steps of wetting said (111) face with a mixture consisting essentially of bromine and methanol, said bromine being present in an amount within the range of 0.001 to 0.0025 percent by volume of the total solution and stirring along a plane substantially parallel to and at a distance from the high points of said (111) face of the order of the depth of the discontinuities of said (111) face.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

Nov. 10, 1964 M. v. SULLIVAN 3,155,596
METHOD FOR POLISHING GALLIUM ARSENIDE Filed Dec- 29. 1961 FIG.
ROTATING MECHANISM L F .l n ,ILL "JA- l u/ /a I 1 I I LU FIG. 2
. INVENTOR M. l SULLIVAN EAM m 1 1% A T TORA/E Y United States Patent 3,156,596 METHOD FOR POLISHING GALLIUM ARSENIDE Miles V. Sullivan, Summit, N.J., assignor to Bell Telephone Laboratories, Incorporated, New York, N.Y., a corporation of New York Filed Dec. 29, 1961, Ser. No. 163,126 Claims. (Cl. 156-17) This invention relates to a method for polishing gallium arsenide.
More specifically, this invention is directed to a technique for polishing crystals of gallium arsenide with a solution comprising a mixture of bromine and methanol, such solution being particularly well suited as a substitute for or supplement to the usual mechanical polishing procedure for these crystals.
In the fabrication of semiconductor devices it is essential to prepare the (semiconductor) starting material in slices which have flat, smooth, damage-free surfaces. This is particularly critical for diffused devices since imperfect surfaces disturb the even passage of the diffusant into the semiconductor slices. This, in turn, deleteriously affects the electrical characteristics of the device.
Several techniques such as electropolishing, chemical etching and mechanical lapping of semiconductor slices are well known and presently in use in the semiconductor art. By lapping and polishing techniques a surface can be prepared which is about 0.0001 inch per inch flat. The average roughness of this surface is typically 0.3 microinch. The resultant surfaces are smooth and fiat enough for satisfactory device fabrication but the mechanical damage which is still present on the surface deleteriously affects the electrical characteristics of devices. Typically, it is necessary to remove such damaged surfaces prior to further processing by chemically etching the surface. Unfortunately, chemical etching with conventional etchants, such as aqua regia or mixtures of nitric and hydro fluoric acids, increases the average roughness of a typical surface to about 3.0 microinches or greater. Thus, the gain in removing mechanical damage by the chemical etching technique is obtained at the expense of increasing the average roughness. In order to obtain a surface which is sufliciently damage-free and still maintain a low average roughness and suitable flatness, these processes, namely, mechanical polishing and chemical etching, may be alternated several times, however, resulting in increased production costs.
In accordance with this invention a technique is described for polishing the surfaces of gallium arsenide crystals with a bromine-containing methanol solution, thereby producing surfaces which are smooth to better than 0.5 microinch, flat to better than 0.0001 inch per inch and free of mechanical damage. As described herein, etching is conducted in conjunction with a mechanical stirring mechanism resulting in agitation proximate the surface to be etched.
In an illustrative embodiment the inventive technique involves mounting the gallium arsenide on a rotatable disk such that the surface of interest is exposed. A second rotatable disk optionally covered by a low-pile cloth is positioned proximate the surface of interest such that the pile of the cloth is almost in contact with such surface. The second disk is rotated about an axis of rotation parallel to but not coincident with that about which the first disk is rotated. The bromine-containing methanol solution is provided to a level above the pile of the cloth for contacting the surface to be polished.
The invention will be more fully understood from the following detailed description taken in conjunction with the following drawing wherein:
FIG. 1 is a perspective view, partially in cross-section,
"Ice
of an apparatus suitable for the present inventive purposes; and
FIG. 2 is an enlarged view, partially in cross-section, of a portion of the surface of a gallium arsenide crystal and the stirring mechanism of the apparatus employed.
Referring more particularly to FIG.l, there is shown a cylindrical container 11 having a centrally located rotating mechanism 12, typically an electric motor, secured to the container by supports 13. A metallic shaft 14 transmits angular motion from the rotating mechanism to a. glass stirring disk 15 positioned immediately below the annular lip 16 of the cylindrical container 11. The glass stirring disk is covered by a low-pile cloth 17. The diskshaped block 18 is secured to a holder 20 by a suitable connection which allows block 18 to rotate about an axis of rotation 22 which is parallel to but eccentrically disposed to shaft 14. A plurality of gallium arsenide slices 23 are aflixed to the surface 24 of block 18 such that the surfaces 25 of slices 23 are in contact with the pile 26 of the low-pile cloth 17 which may also be a material such as Dextilose paper which is obtained commercially from the Dexter Paper Company. The term low-pile refers to any cloth or high wet strength paper having a pile of height of approximately 0.030 inch or less. Tube 28 provides a continuous supply of solution. The level of the solution is kept sufficiently high that the surface of interest is wet by it.
In operation, slices 23 are made to rotate independently of stirring disk 15, or are dragged by the rotation of the disk. In either instance, the result is a continuously changing direction of polishing for slices 23 because of the eccentric arrangement of the axis of rotation 22 and the shaft 14.
The presence of a source of radiation having a Wavelength in the visible range, such as a 300-600 watt tungsten filament light bulb has a tendency to reduce preferential etching in heavily damaged regions, thereby resulting in smoother gallium arsenide surfaces. To this end, radiation source 29 is suitably positioned in the apparatus shown in FIG. 1 proximate glass disk 15. It will be appreciated by those skilled in the art that the exact location of such source may be varied as desired.
The solution employed in the present technique comprises methanol and bromine wherein the bromine is present in an amount within the range of 0.001 to 0.05 percent by volume of the total solution. The use of concentrations beyond 0.05 percent adversely alfects the polishing in that pitting in the gallium arsenide slice is increased. The lower limit of 0.001 percent of bromine by volume of the total solution is not absolute and is dictated by considerations of etching rate.
The etching solutions herein contain a maximum bromine content of 0.0025 percent and are suitable for polishing all faces of gallium arsenide including the (m) and (111) and such range is preferred for the practice of this invention. However, higher concentrations up to 0.05 percent which are unsuitable on the (111) face are useful and often desirable for polishing the other faces of this crystalline system.
FIG. 2 shows on an expanded scale the spatial relations of the various elements for optimum operation.
In particular, the spatial relations are such that the pile 34 is separated advantageously from the high points 36 of the surface a distance 33 which is of the same order as magnitude, preferably between three times and a third, as the depth 38 of an average depression below the surface. However, it is tolerable if the pile makes grazing contact with the high points of the surface.
Experimentation has shown that by maintaining the stirring means at such a distance, the etch rate at the high points can be increased by at least a factor of ten. This Q2 results in gallium arsenide surfaces which are smooth to within 0.05 microinch and flat to within 0.0001 inch per inch over a square centimeter of surface area.
Several examples of the present invention are described in detail below. These examples and the illustration described above are included merely to aid in the understanding of the invention, and variations may be made by one skilled in the art without departing from the spirit and scope of the invention.
Example I Three slices of (TE) gallium arsenide, approximately 0.5 inch by 0.5 inch by 0.02 inch lapped with 1950 mesh alumina were affixed to the surface of block 18 in the apparatus shown in FIG. 1. Disk 15 was an 8 inch glass cylinder having Dextilose paper attached to one surface thereof. A bromine-methanol solution containing 0.05 percent bromine by volume of solution was admitted to container 11 in an amount sufficient to wet the surfaces of the gallium arsenide. Disk 15 was rotated at 72 revolutions per minute while illuminated by a 500 watt tungsten filament. After 25 minutes the thickness of the slices was reduced from approximately 0.02 to 0.019 inch, the smoothness of the surfaces changed from 4.0 to 0.1 microinch and the flatness was unchanged from its original 0.0001 inch per inch on all but the outer 10 percent of the surface.
Example II Three slices of (111) gallium arsenide, approximately 0.5 inch by inch by 0.02 inch were lapped with 1950 mesh alumina and then with 0.3 micron alumina and were affixed to the surface of block 18 in the apparatus shown in FIG. 1. The procedure of Example I was next repeated with the exception that a bromine-methanol solutioncontaining 0.0025 percent bromine by volume of total solution was employed. After 40 minutes the thickness of the slices was reduced from approximately 0.02 to 0.0199 inch, the smoothness of the slice changed from 0.5 to 0.1 microinch and the flatness was unchanged from its original 0.0001 inch per inch on all but the outer percent of the surface.
While the invention has been described in detail in the foregoing. specification, it will be appreciated by those skilled in the art that various modifications may be made 4 without departing from the spirit and scope of the invention, reference being had to the appended claims.
What is claimed is:
1. The method of polishing a crystal of gallium arsenide which comprises the steps of wetting said crystal with a mixture consisting essentially of bromine and methanol, said bromine being present in an amount within the range of 0.001 to 0.05 percent by volume of the total solution and stirring along a plane substantially parallel to and at a distance from the high points of said crystal of the order of the depth of the discontinuities of said crystals.
2. The method of claim 1 wherein said stirring means is a glass disk.
3. The method of claim 2 wherein said crystal is illuminated.
4. The method of claim 1 wherein said stirring means is a low-pile cloth covered glass disk.
5.v The method of claim 4 wherein the distance between said crystal and said cloth covered disk is less than 0.030 mil.
6. The method of polishing the (111) face of gallium arsenide which comprises the steps of wetting said (111) face with a mixture consisting essentially of bromine and methanol, said bromine being present in an amount within the range of 0.001 to 0.0025 percent by volume of the total solution and stirring along a plane substantially parallel to and at a distance from the high points of said (111) face of the order of the depth of the discontinuities of said (111) face.
7. The method of claim 6 wherein said stirring means is a glass disk.
8. The method of claim 7 wherein said crystal is illuminated.
9. The method of claim 6 wherein said stirring means is a low-pile cloth covered glass disk.
10. The method of claim 9 wherein the distance between said crystal and said cloth covered disk is less than 0.030 mil.
References Cited in the file of this patent UNITED STATES PATENTS 2,539,455 Mazia Jan. 30, 1951 2,841,477 Hall July 1, 1958 3,024,148 Schaer Mar. 6, 1962

Claims (1)

1. THE METHOD OF POLISHING A CRYSTAL OF GALLIUM ARSENIDE WHICH COMPRISES THE STEPS OF WETTING SAID CRYSTAL WITH A MIXTURE CONSISTING ESSENTIALLY OF BROMINE AND METHANOL, SAID BROMINE BEING PRESENT IN AN AMOUNT WITHIN THE RANGE OF 0.001 TO 0.05 PERCENT BY VOLUME OF THE TOTAL SOLUTION AND STIRRING ALONG A PLANE SUBSTANTIALLY PARALLEL TO AND AT A DISTANCE FROM THE HIGH POINTS OF SAID CRYSTAL OF THE ORDER OF THE DEPTH OF THE DISCONTINUITIES OF SAID CRYSTALS.
US163126A 1961-12-29 1961-12-29 Method for polishing gallium arsenide Expired - Lifetime US3156596A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
US163126A US3156596A (en) 1961-12-29 1961-12-29 Method for polishing gallium arsenide
US163094A US3262825A (en) 1961-12-29 1961-12-29 Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
GB43790/62A GB1025177A (en) 1961-12-29 1962-11-20 An etchant for semiconductor materials
GB43788/62A GB945933A (en) 1961-12-29 1962-11-20 Polishing gallium arsenide crystals
FR916188A FR1339898A (en) 1961-12-29 1962-11-21 Process for polishing gallium arsenide
BE625119D BE625119A (en) 1961-12-29 1962-11-21
NL286503D NL286503A (en) 1961-12-29 1962-12-10
DEW33527A DE1278801B (en) 1961-12-29 1962-12-14 Process for etching or polishing a crystal from a ó¾-ó§ compound
DE19621546063 DE1546063B2 (en) 1961-12-29 1962-12-19 METHOD AND APPARATUS FOR POLISHING GALLIUM ARSENIDE WITH A CORROSIVE
SE14116/62A SE307492B (en) 1961-12-29 1962-12-28

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
DE1287409B (en) * 1966-04-21 1969-01-16 Telefunken Patent Method and device for producing flat surfaces on semiconductor wafers using a pickling liquid
US3436286A (en) * 1963-03-28 1969-04-01 Siemens Ag Polishing method for the removal of material from monocrystalline semiconductor bodies
US3629023A (en) * 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
FR2168936A1 (en) * 1972-01-27 1973-09-07 Labo Electronique Physique
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4323422A (en) * 1980-04-24 1982-04-06 Calawa Arthur R Method for preparing optically flat damage-free surfaces
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
US20230286102A1 (en) * 2021-03-11 2023-09-14 Board Of Trustees Of Michigan State University Polishing apparatus for smoothing diamonds

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5071261A (en) * 1973-10-25 1975-06-13
US4869779A (en) * 1987-07-27 1989-09-26 Acheson Robert E Hydroplane polishing device and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2539455A (en) * 1944-01-27 1951-01-30 Mazia Joseph Electrolytic polishing of metals
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US3024148A (en) * 1957-08-30 1962-03-06 Minneapols Honeywell Regulator Methods of chemically polishing germanium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2539455A (en) * 1944-01-27 1951-01-30 Mazia Joseph Electrolytic polishing of metals
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US3024148A (en) * 1957-08-30 1962-03-06 Minneapols Honeywell Regulator Methods of chemically polishing germanium

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
US3436286A (en) * 1963-03-28 1969-04-01 Siemens Ag Polishing method for the removal of material from monocrystalline semiconductor bodies
DE1287409B (en) * 1966-04-21 1969-01-16 Telefunken Patent Method and device for producing flat surfaces on semiconductor wafers using a pickling liquid
US3629023A (en) * 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
FR2168936A1 (en) * 1972-01-27 1973-09-07 Labo Electronique Physique
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4323422A (en) * 1980-04-24 1982-04-06 Calawa Arthur R Method for preparing optically flat damage-free surfaces
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
US20230286102A1 (en) * 2021-03-11 2023-09-14 Board Of Trustees Of Michigan State University Polishing apparatus for smoothing diamonds
US11897087B2 (en) * 2021-03-11 2024-02-13 Board Of Trustees Of Michigan State University Polishing apparatus for smoothing diamonds

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GB945933A (en) 1964-01-08

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