US20230343613A1 - Multi-chamber apparatus - Google Patents
Multi-chamber apparatus Download PDFInfo
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- US20230343613A1 US20230343613A1 US18/214,096 US202318214096A US2023343613A1 US 20230343613 A1 US20230343613 A1 US 20230343613A1 US 202318214096 A US202318214096 A US 202318214096A US 2023343613 A1 US2023343613 A1 US 2023343613A1
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- 238000000352 supercritical drying Methods 0.000 claims abstract description 79
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000012530 fluid Substances 0.000 claims abstract description 30
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 19
- 239000000243 solution Substances 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 14
- 239000011259 mixed solution Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 58
- 239000000126 substance Substances 0.000 claims description 52
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 209
- 239000007788 liquid Substances 0.000 description 29
- 239000002245 particle Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 2
- 239000003517 fume Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67063—Apparatus for fluid treatment for etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Definitions
- Embodiments relate to a multi-chamber apparatus.
- the number of tiers in which chips are stacked in a device may increase.
- some drying processes performed using isopropyl alcohol while rotating a wafer may be reaching the limit in terms of the occurrence of pattern leaning. Accordingly, supercritical drying may be performed using a supercritical fluid.
- a wafer cleaning process for removing silicon nitride of a NAND flash device may be performed in a batch type in which a wafer is immersed in a bath.
- Some supercritical drying apparatuses may be of a single type, rather than a batch type. An apparatus may perform a wafer cleaning process and a supercritical drying process at once.
- the embodiments may be realized by providing a multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
- the embodiments may be realized by providing a multi-chamber apparatus for processing a wafer, the apparatus including at least one high etch rate chamber to receive the wafer and to etch silicon nitride with a chemical at a first temperature; at least one rinse chamber to receive the wafer and to clean the wafer with a chemical at a second temperature that is lower than the first temperature; at least one supercritical drying chamber to dry the wafer with a supercritical fluid; a housing in which the at least one high etch rate chamber, the at least one rinse chamber, and the at least one supercritical drying chamber are located; and a robot arm in the housing to move the wafer to the at least one high etch rate chamber, the at least one rinse chamber, and the at least one supercritical drying chamber.
- the embodiments may be realized by providing a multi-chamber apparatus for processing a wafer, the apparatus including at least one first chamber; at least one second chamber; at least one third chamber; a transfer zone outside the at least one first chamber, the at least one second chamber, and the at least one third chamber; a buffer zone outside the at least one first chamber, the at least one second chamber, and the at least one third chamber and connected to the transfer zone; and a driver to move the wafer, wherein the driver moves the wafer from the buffer zone to the at least one first chamber, moves the wafer to the at least one second chamber via the transfer zone after an etching process is performed on the wafer using a phosphoric acid solution in the at least one first chamber, moves the wafer to the at least one third chamber via the transfer zone after a cleaning process is performed on the wafer using an ammonia mixed solution in the at least one second chamber, and moves the wafer to the buffer zone after a supercritical drying process is performed on the wafer in the at least one third chamber.
- FIG. 1 illustrates a plan view of a multi-chamber apparatus according to embodiments
- FIG. 2 illustrates a side view of the multi-chamber apparatus of FIG. 1 ;
- FIG. 3 illustrates a sequence of a wafer cleaning process performed by the multi-chamber apparatus according to the embodiments
- FIG. 4 illustrates a cross-sectional view of a high etch rate chamber of the multi-chamber apparatus according to the embodiments
- FIG. 5 illustrates a flowchart of a process performed in the high etch rate chamber of the multi-chamber apparatus according to the embodiments
- FIG. 6 illustrates a cross-sectional view of a rinse chamber of the multi-chamber apparatus according to the embodiments
- FIG. 7 illustrates a flowchart of a process performed in the rinse chamber of the multi-chamber apparatus according to the embodiments
- FIG. 8 illustrates a cross-sectional view of a supercritical drying chamber of the multi-chamber apparatus according to the embodiments
- FIG. 9 illustrates a flowchart of a process performed in the supercritical drying chamber of the multi-chamber apparatus according to the embodiments.
- FIG. 10 illustrates a graph comparing a process time of each chamber of a multi-chamber apparatus according to embodiments
- FIG. 11 illustrates a plan view of a multi-chamber apparatus according to embodiments
- FIG. 12 illustrates a side view of a multi-chamber apparatus according to embodiments.
- FIG. 13 illustrates a plan view of a multi-chamber apparatus according to embodiments.
- FIGS. 1 and 2 A multi-chamber apparatus according to embodiments will now be described with reference to FIGS. 1 and 2 .
- FIG. 1 illustrates a plan view of a multi-chamber apparatus according to embodiments.
- FIG. 2 illustrates a side view of the multi-chamber apparatus of FIG. 1 .
- the multi-chamber apparatus may include a housing 100 , an opening and closing portion 105 , a load port 110 , a buffer zone 120 , a high etch rate chamber 130 , a rinse chamber 140 , a supercritical drying chamber 150 , a transfer zone 160 , and a driver 170 .
- a first direction X may be any one of horizontal directions.
- a second direction Y may be any one of horizontal directions different from the first direction X.
- the second direction Y may intersect the first direction X.
- the second direction Y may be perpendicular to the first direction X.
- a third direction Z may be a direction intersecting the first direction X and the second direction Y.
- the third direction Z may be a direction perpendicular to both the first direction X and the second direction Y.
- the third direction Z may be, e.g., a vertical direction. Accordingly, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other.
- the multi-chamber apparatus may have a structure in which a plurality of chambers are stacked in the third direction Z.
- the multi-chamber apparatus may include, e.g., twelve chambers.
- six chambers arranged in plan view as illustrated in FIG. 1 may be stacked in two tiers.
- the multi-chamber apparatus of FIGS. 1 and 2 may include four high etch rate chambers 130 , four rinse chambers 140 , and four supercritical drying chambers 150 .
- FIG. 2 may be a side layout of the multi-chamber apparatus whose chambers are stacked in two tiers in the third direction Z.
- the housing 100 may contain the high etch rate chamber 130 , the rinse chamber 140 , the supercritical drying chamber 150 , the buffer zone 120 , the transfer zone 160 , and the driver 170 .
- the housing 100 may form outer walls of the multi-chamber apparatus according to the embodiments.
- the opening and closing portion 105 may be at a side of the housing 100 .
- the opening and closing portion 105 may be a passage through which a wafer W is put into the housing 100 or removed from the housing 100 (e.g., the wafer W may be insertable and/or removable through the opening and closing portion).
- the opening and closing portion 105 may be closed to seal the housing 100 .
- the opening and closing portion 105 may be temporally opened when the wafer W is put into the housing 100 .
- the apparatus may include, e.g., one, opening and closing portion 105 , as illustrated in FIGS. 1 and 2 .
- the load port 110 may be outside the housing 100 .
- the load port 110 may be a place where a wafer W waits for a while (e.g., for a predetermined time) before being put into the housing 100 .
- a plurality of wafers W may be placed in the load port 110 before being put into the housing 100 .
- the wafers W may be placed in a stacked state.
- the load port 110 may be provided in plural numbers. In an implementation, as illustrated in FIG. 1 , four load ports 110 may be present. In an implementation, a plurality of stacked wafers W may be placed in each of the load ports 110 .
- the buffer zone 120 may be inside the housing 100 .
- the buffer zone 120 may be a place where a wafer W put into the housing 100 is first placed.
- the wafer W may be transferred from the load port 110 to the buffer zone 120 by a second robot arm 172 .
- the second robot arm 172 may move the wafer W in the first direction X, the second direction Y, and the third direction Z.
- the wafer W may be placed between the buffer zone 120 and the transfer zone 160 . This may facilitate transfer of the wafer W.
- the buffer zone 120 may be connected to the transfer zone 160 , and the wafer may be accommodatable in the buffer zone 120 for a predetermined time period before being moved to the high etch rate chamber 130 , the rinse chamber 140 , or the supercritical drying chamber 150 .
- the high etch rate chamber 130 may be inside the housing 100 .
- the high etch rate chamber 130 may receive the wafer W.
- the high etch rate chamber 130 may receive the wafer W through a first opening and closing portion 131 and maintain a sealed environment.
- the high etch rate chamber 130 may, e.g., etch silicon nitride (Si 3 N 4 ) on the wafer W by using a phosphoric acid (H 3 PO 4 ) solution.
- the temperature of the phosphoric acid solution may be, e.g., 150° C. to 300° C.
- the high etch rate chamber 130 may clean the wafer W with deionized water after the etching process using the phosphoric acid solution.
- the rinse chamber 140 may be inside the housing 100 .
- the rinse chamber 140 may receive the wafer W through a second opening and closing portion 141 and maintain a sealed environment.
- rinse chamber 140 may, e.g., additionally remove particles remaining on the wafer W by using a phosphoric acid solution and clean the wafer W with an ammonia mixed solution.
- the ammonia mixed solution may contain, e.g., NH 4 OH:H 2 O 2 :H 2 O.
- the rinse chamber 140 may apply isopropyl alcohol (IPA) to the wafer W. Applying the isopropyl alcohol by the rinse chamber 140 may be a pretreatment process prior to a drying process of the supercritical drying chamber 150 .
- IPA isopropyl alcohol
- the supercritical drying chamber 150 may be inside the housing 100 .
- the supercritical drying chamber 150 may receive the wafer W through a third opening and closing portion 151 and maintain a sealed environment.
- the supercritical drying chamber 150 may dry the wafer W with a supercritical fluid.
- the supercritical drying chamber 150 may completely dry the wafer W in or from a wet state.
- the transfer zone 160 may be adjacent to the outside of the high etch rate chamber 130 , the rinse chamber 140 , and the supercritical drying chamber 150 .
- the transfer zone 160 may be connected to the buffer zone 120 .
- the transfer zone 160 may be a passage through which the wafer W is transferred to the high etch rate chamber 130 , the rinse chamber 140 , the supercritical drying chamber 150 , and the buffer zone 120 .
- the wafer W may be moved in the transfer zone 160 by a first robot arm 171 .
- the transfer zone 160 may be a place where the first robot arm 171 is installed and moves.
- Each of the high etch rate chamber 130 , the rinse chamber 140 and the supercritical drying chamber 150 may be provided in plural numbers.
- the high etch rate chambers 130 , the rinse chambers 140 and the supercritical drying chambers 150 may be arranged in the first direction X and the second direction Y.
- the high etch rate chambers 130 , the rinse chambers 140 and the supercritical drying chambers 150 may be stacked in the third direction Z.
- the high etch rate chambers 130 , the rinse chambers 140 and the supercritical drying chambers 150 may be arranged on both sides of the transfer zone 160 in the second direction Y.
- the driver 170 may move the wafer W.
- the driver 170 may move the wafer W to the load port 110 , the buffer zone 120 , the high etch rate chamber 130 , the rinse chamber 140 , and the supercritical drying chamber 150 .
- the driver 170 may include the first robot arm 171 and the second robot arm 172 .
- the driver 170 may include, e.g., two robot arms.
- the number of robot arms included in the driver 170 may vary.
- the multi-chamber apparatus may also move the wafer W using a medium other than robot arms.
- the driver 170 may include other media such as a conveyor belt, that can move the wafer W.
- the first robot arm 171 may move the wafer W.
- the first robot arm 171 may move the wafer W from the buffer zone 120 to the high etch rate chamber 130 .
- the first robot arm 171 may move the wafer W from the supercritical drying chamber 150 to the buffer zone 120 .
- the first robot arm 171 may be provided in plural numbers.
- the first robot arm 171 may also move the wafer W from the high etch rate chamber 130 to the rinse chamber 140 .
- the first robot arm 171 may move the wafer W from the rinse chamber 140 to the supercritical chamber 150 .
- the first robot arm 171 can move the wafer W in the first direction X, the second direction Y, and the third direction Z.
- the second robot arm 172 may move the wafer W from the load port 110 to the buffer zone 120 . In an implementation, the second robot arm 172 may move the wafer W from the buffer zone 120 to the load port 110 . In an implementation, the second robot arm 172 may move the dried or dry wafer W.
- the second robot arm 172 may also be provided in plural numbers.
- the first robot arm 171 may include a plurality of holds or holders 171 a through 171 c. In an implementation, as illustrated in FIG. 1 , the first robot arm 171 may include, e.g., three holders 171 a through 171 c. In an implementation, the number of holders 171 a through 171 c may vary.
- the first robot arm 171 may include, e.g., a first holder 171 a, a second holder 171 b, and a third holder 171 c.
- the first holder 171 a may move the wafer W from the buffer zone 120 to the high etch rate chamber 130 .
- the second holder 171 b may move the wafer W from the supercritical drying chamber 150 to the transfer zone 160 or the buffer zone 120 .
- the first holder 171 a and the second holder 171 b may move the dry wafer W.
- the third holder 171 c may move the wafer W from the high etch rate chamber 130 to the rinse chamber 140 via the transfer zone 160 .
- the third holder 171 c may be used to move the wafer W from the rinse chamber 140 to the supercritical drying chamber 150 via the transfer zone 160 .
- the wafer W may be moved in a wet state in order to prevent a pattern of the wafer W from leaning.
- the first holder 171 a and the second holder 171 b may be two separate holders. In an implementation, they can be used as one holder in the multi-chamber apparatus. For example, the two holders may be used to move a dry wafer W, and they can be used interchangeably. In an implementation, the third holder 171 c may not be used interchangeably with other holders.
- the third holder 171 c may be below the first holder 171 a and the second holder 171 b (e.g., relative to the third direction Z) in order to prevent the dry wafer W from being contaminated by the wet wafer W. For example, it is possible to prevent a liquid dripping from the wet wafer W from reaching the dry wafer W.
- the two-tier multi-chamber apparatus will be described as including a lower chamber area located in a lower tier of a two-tier structure and an upper chamber area located in an upper tier of the two-tier structure.
- the wafer W moved from the load port 110 to the buffer zone 120 by the second robot arm 172 may be located in a height range of the upper chamber area in the third direction Z.
- the first robot arm 171 may move to the height range of the upper chamber area in the third direction Z to receive the wafer W from the second robot arm 172 and then may move the wafer W to the high etch rate chamber 130 .
- the wafer W moved from the load port 110 to the buffer zone 120 by the second robot arm 172 may be located at a predetermined height in the third direction Z.
- the predetermined height may be a suitable position, which may be allowed in the third direction Z, in the housing 100 .
- the predetermined height may be within a height range of a chamber area where a high etch rate chamber 130 into which the wafer W can be put after a shortest waiting time among a plurality of high etch rate chambers 130 is located.
- the predetermined height may be within the height range of the upper chamber area or within the height range of the lower chamber area depending on the progress of processes.
- the first robot arm 171 may move to the predetermined height in the third direction Z to receive the wafer W from the second robot 172 and then may move the wafer W to the high etch rate chamber 130 .
- FIG. 3 illustrates the sequence of a wafer cleaning process performed by the multi-chamber apparatus according to the embodiments.
- a wafer W may be located in the load port 110 .
- the wafer W may be transferred to the buffer zone 120 by the second robot arm 172 .
- the transfer of the wafer W from the load port 110 to the buffer zone 120 may be a dry transfer in which the wafer W is transferred in a dry state.
- the wafer W may wait in the buffer zone 120 and then be transferred to the high etch rate chamber 130 .
- the wafer W may be transferred by the first robot arm 171 .
- the transfer of the wafer W from the buffer zone 120 to the high etch rate chamber 130 may be a dry transfer in which the wafer W is transferred in a dry state.
- the wafer W may be transferred to the high etch rate chamber 130 via the transfer zone 160 or may be transferred directly from the buffer zone 120 to the high etch rate chamber 130 .
- the first opening and closing portion 131 of the high etch rate chamber 130 may be formed or open toward the buffer zone 120 , or there may be a separate opening and closing portion different from the first opening and closing portion 131 formed or open toward the transfer zone 160 .
- the wafer W may be moved by the first holder 171 a of the first robot arm 171 .
- the wafer W that has gone through a process in the high etch rate chamber 130 may be transferred to the transfer zone 160 .
- the wafer W may be moved by the third holder 171 c of the first robot arm 171 .
- the transfer of the wafer W from the high etch rate chamber 130 to the transfer zone 160 may be a wet transfer in which the wafer W is transferred in a wet state.
- the wafer W may be transferred from the transfer zone 160 to the rinse chamber 140 .
- the wafer W may be continuously moved by the third holder 171 c of the first robot arm 171 .
- the transfer of the wafer W from the transfer zone 160 to the rinse chamber 140 may be a wet transfer in which the wafer W is transferred in a wet state.
- the wafer W that has gone through a process in the rinse chamber 140 may be transferred again to the transfer zone 160 .
- the wafer W may be moved by the third holder 171 c of the first robot arm 171 .
- the transfer of the wafer W from the rinse chamber 140 to the transfer zone 160 may be a wet transfer in which the wafer W is transferred in a wet state.
- the wafer W may be transferred from the transfer zone 160 to the supercritical drying chamber 150 .
- the wafer W may be continuously moved by the third holder 171 c of the first robot arm 171 .
- the transfer of the wafer W from the transfer zone 160 to the supercritical drying chamber 150 may be a wet transfer in which the wafer W is transferred in a wet state.
- the wafer W that has gone through a process in the supercritical drying chamber 150 may be transferred again to the transfer zone 160 .
- the wafer W may be moved by the second holder 171 b of the first robot arm 171 .
- the transfer of the wafer W from the supercritical drying chamber 150 to the transfer zone 160 may be a dry transfer in which the wafer W is transferred in a dry state.
- the wafer W may be transferred from the transfer zone 160 to the buffer zone 120 .
- the wafer W may be continuously moved by the second holder 171 b of the first robot arm 171 .
- the transfer of the wafer W from the transfer zone 160 to the buffer zone 180 may be a dry transfer in which the wafer W is transferred in a dry state.
- the wafer W may be transferred from the buffer zone 120 back to the load port 110 by the second robot arm 172 .
- a part for performing a wet transfer and a part for performing a dry transfer may be strictly separated from each other in the driver 170 .
- the third holder 171 c may be exclusively responsible for a wet transfer
- the first holder 171 a, the second holder 171 b and the second robot arm 172 may be responsible for a dry transfer.
- a process performed on a wafer W in the high etch rate chamber 130 will now be described with reference to FIGS. 4 and 5 .
- FIG. 4 illustrates a cross-sectional view of the high etch rate chamber 130 of the multi-chamber apparatus according to the embodiments.
- FIG. 5 illustrates a flowchart of a process performed in the high etch rate chamber 130 of the multi-chamber apparatus according to the embodiments.
- the high etch rate chamber 130 may include a housing 1100 a, a spinner 1160 a, a nozzle 1170 a, a bowl 1180 a, and a fixing rotor module 1230 a.
- a first direction X may be any one of horizontal directions.
- a second direction X may be any one of horizontal directions.
- the second direction Y may be any one of horizontal directions different from the first direction X.
- the second direction Y may intersect the first direction X.
- the second direction Y may be perpendicular to the first direction X.
- a third direction Z may be a direction intersecting the first direction X and the second direction Y.
- the third direction Z may be a direction perpendicular to both the first direction X and the second direction Y.
- the third direction Z may be, for example, a vertical direction. Accordingly, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other.
- the housing 1100 a may be located under a wafer W.
- the housing 1100 a and the wafer W may be successively arranged in the third direction Z.
- the housing 1100 a may heat a lower surface of the wafer W.
- An upper surface of the housing 1100 a may be adjacent to the lower surface of the wafer W.
- the housing 1100 a may fix and support the wafer W. In addition, the housing 1100 a may heat the wafer W.
- the spinner 1160 a may include a grip portion 1161 a, a chemical drain guide 1163 a, a heat insulating block 1164 a, a first rotor portion 1165 a, a sidewall portion 1168 a , a bearing 1166 a, and a fixing portion 1167 a.
- the grip portion 1161 a may be in contact with sides of the wafer W.
- the grip portion 116 a may be fixed to the wafer W by directly contacting the sides of the wafer W. For example, the grip portion 1161 a may rotate together with the wafer W.
- the spinner 1160 a may rotate the wafer W at a suitable speed. This is because if the rotational speed of the spinner 1160 a were to be too high, an edge portion of the wafer W could relatively cooled, resulting in a non-uniform temperature distribution. In this case, an etch rate could also be different in a central portion and the edge portion of the wafer W.
- the grip portion 1161 a may include a heat insulating material. When the wafer W is heated by the housing 1100 a, the grip portion 116 a may block the transfer of heat, thereby preventing thermal damage to other parts of the high etch rate chamber 130 .
- the chemical drain guide 1163 a may guide a drain path of a liquid chemical 1171 a.
- the chemical drain guide 1163 a may be connected to the grip portion 1161 a.
- the liquid chemical 1171 a may be pushed to the sides of the wafer W by a flow Fa after being used in an etching process on an upper surface of the wafer W.
- the liquid chemical 1171 a may reach the chemical drain guide 1163 a via the grip portion 1161 a on the sides of the wafer W and become a discharge liquid chemical 1171 oa.
- the discharge liquid chemical 1171 oa may be discharged to the outside along the chemical drain guide 1163 a.
- the chemical drain guide 1163 a may be located at a position lower than the bowl 1180 a, and it may help prevent the liquid chemical 1171 a and the discharge liquid chemical 1171 oa from leaking to the outside. This can increase the durability of the high etch rate chamber 130 and prevent damage due to the discharge liquid chemical 1171 oa.
- the chemical drain guide 1163 a may be further away from the wafer W than other elements of the spinner 1160 a, e.g., the heat insulating block 1164 a, the first rotor portion 1165 a, the sidewall portion 1168 a, the bearing 1166 a, and the fixing portion 1167 a.
- the discharge liquid chemical 1171 oa may be prevented from damaging the heat insulating block 1164 a, the first rotor portion 1165 a, the sidewall portion 1168 a, the bearing 1166 a, and the fixing portion 1167 a.
- the heat insulating block 1164 a may constitute sidewalls of the spinner 1160 a between the grip portion 1161 a and the chemical drain guide 1163 a.
- the heat insulating block 1164 a may be made of a heat insulating material to block the heat received by the grip portion 1161 a and the chemical drain guide 1163 a from being transmitted to other elements of the spinner 1160 a.
- the heat insulating block 1164 a may be located at a position in direct contact with the grip portion 1161 a and the chemical drain guide 1163 a. In an implementation, the heat insulating block 1164 a can be located at any position in the spinner 1160 a as needed.
- the heat insulating block 1164 a may be a single element. In an implementation, the heat insulating block 1164 a may also be disposed as a plurality of elements in a plurality of parts.
- the first rotor portion 1165 a may rotate the spinner 1160 a in a magnetic levitation manner, like a second rotor portion 1210 a to be described below.
- the first rotor portion 1165 a may be fixed to the heat insulating block 1164 a, the sidewall portion 1168 a , and the grip portion 1161 a of the spinner 1160 a, and the rotation of the first rotor portion 1165 a may cause the entire spinner 1160 a to rotate.
- the wafer W may also rotate together with the spinner 1160 a.
- the housing 1100 a may rotate together with the spinner 1160 a, or only the spinner 1160 a and the wafer W may rotate while the housing 1100 a is fixed. If the housing 1100 a is fixed, the wafer W and the housing 1100 a may be spaced apart from each other.
- the first rotor portion 1165 a may include a magnetic substance.
- the first rotor portion 1165 a may generate a rotational force through a magnetic force, together with the second rotor portion 1210 a which also includes a magnetic substance.
- the sidewall portion 1168 a may be in contact with the first rotor portion 1165 a to form the sidewalls of the spinner 1160 a.
- the sidewall portion 1168 a may be located between the first rotor portion 1165 a and the bearing 1166 a.
- the sidewall portion 1168 a may also include all portions constituting the sidewalls of the spinner 1160 a.
- the sidewall portion 1168 a may be a single element as illustrated in FIG. 4 or may include a plurality of elements.
- the bearing 1166 a may be between the sidewall portion 1168 a and the fixing portion 1167 a. In an implementation, the bearing 1166 a may be at any position between the fixing portion 1167 a that is fixed and the first rotor portion 1165 a that is rotated.
- the bearing 1166 a allows the spinner 1160 a to rotate.
- the bearing 1166 a may be a minimum element for enabling the spinner 1160 a to rotate even though the spinner 1160 a includes the fixed fixing portion 1167 a.
- the bearing 1166 a may rotate as the first rotor portion 1165 a rotates.
- the bearing 1166 a may simultaneously connect the fixing portion 1167 a and the sidewall portion 1168 a, the first rotor portion 1165 a, the heat insulating block 1164 a, the grip portion 1161 a, and the chemical drain guide 1163 a. Accordingly, the spinner 1160 a may be rotated while being fixed.
- the fixing portion 1167 a may be in a lower part of the spinner 1160 a to fix and support the spinner 1160 a.
- the fixing portion 1167 a may not rotate. Instead, the fixing portion 1167 a may be connected to the bearing 1166 a so as to allow a portion of the spinner 1160 a to rotate.
- some portions of the spinner 1160 a excluding the fixing portion 1167 a may rotate, thereby rotating the wafer W.
- the nozzle 1170 a may be located above the wafer W and the spinner 1160 a .
- the nozzle 1170 a may supply the liquid chemical 1171 a to the upper surface of the wafer W.
- the nozzle 1170 a may drop the liquid chemical 1171 a onto the central portion of the wafer W.
- the wafer W may be rotated to spread the dropped liquid chemical 1171 a over the entire upper surface of the wafer W.
- the high etch rate chamber 130 may apply the flow Fa downward (e.g., in the third direction Z) in order to spread the liquid chemical 1171 a on the fixed wafer W. Accordingly, the liquid chemical 1171 a may be moved from the center of the upper surface of the wafer W to the periphery.
- the nozzle 1170 a may spray the liquid chemical 1171 a downward above the upper surface of the wafer W.
- the nozzle 1170 a may also be located on a side of the wafer W at a position higher than the upper surface of the wafer W. The nozzle 1170 a may eject the liquid chemical 1171 a in a lateral direction to supply the liquid chemical 1171 a to the upper surface of the wafer W.
- the liquid chemical 1171 a may be supplied by the nozzle 1170 a.
- the nozzle 1170 a may eject the liquid chemical 1171 a to the upper surface of the wafer W at an appropriate amount and speed. This is because if the liquid chemical 1171 a were to be provided too much or too fast, a temperature rise of the wafer W may be delayed that much longer.
- the bowl 1180 a may be located outside the wafer W, the spinner 1160 a, and the housing 1100 a.
- the bowl 1180 a may extend in the third direction Z to a height higher than the upper surface of the wafer W.
- the bowl 1180 a may block the outflow of the liquid chemical 1171 a and fumes produced by vaporization of the liquid chemical 1171 a .
- the bowl 1180 a may help prevent other parts of the high etch rate chamber 130 from being damaged by the liquid chemical 1171 a and the fumes.
- the fixing rotor module 1230 a may be spaced apart from the spinner 1160 a .
- the fixing rotor module 1230 a may surround the spinner 1160 a.
- the fixing rotor module 1230 a may be located between the chemical drain guide 1163 a and the first rotor portion 1165 a.
- the fixing rotor module 1230 a may include the second rotor portion 1210 a and a rotor support portion 1220 a.
- the second rotor portion 1210 a may rotate the spinner 1160 a in a magnetic levitation manner, like the first rotor portion 1165 a described above.
- the second rotor portion 1210 a may be spaced apart from the heat insulating block 1164 a , the sidewall portion 1168 a, and the grip portion 1161 a of the spinner 1160 a.
- the second rotor portion 1210 a is connected to the rotor support portion 1220 a.
- the second rotor portion 1210 a may include a magnetic substance.
- the second rotor portion 1210 a may generate a rotational force through a magnetic force, together with the first rotor portion 1165 a.
- the above configuration of the high etch rate chamber 130 is an example, and may be modified.
- the high etch rate chamber 130 etches silicon nitride of a wafer with a phosphoric acid solution (operation S 100 ).
- the silicon nitride may be a sacrificial layer or an etch stop layer in a semiconductor manufacturing process.
- the silicon nitride may be etched by the phosphoric acid solution.
- the high etch rate chamber 130 may remove most of the silicon nitride, and a cleaning process may be performed at a high temperature.
- the phosphoric acid solution may be supplied at a high temperature of 150° C. to 300° C.
- the liquid chemical 1171 a supplied by the nozzle 1170 a may be the phosphoric acid solution.
- the wafer may be cleaned with deionized wafer (operation S 200 ).
- the high etch rate chamber 130 may clean the wafer W by supplying deionized water to the wafer W. Accordingly, when the wafer W is taken out of the high etch rate chamber 130 , it may be in a wet state.
- a process performed on a wafer W in the rinse chamber 140 will now be described with reference to FIGS. 6 and 7 .
- FIG. 6 illustrates a cross-sectional view of the rinse chamber 140 of the multi-chamber apparatus according to the embodiments.
- FIG. 7 illustrates a flowchart of a process performed in the rinse chamber 140 of the multi-chamber apparatus according to the embodiments.
- the rinse chamber 140 may include a housing 1100 b, a spinner 1160 b, a nozzle 1170 b, a bowl 1180 b, and a fixing rotor module 1230 b.
- the housing 1100 b, the spinner 1160 b, the nozzle 1170 b, the bowl 1180 b and the fixing rotor module 1230 b of FIG. 6 may have the same or similar structure as the housing 1100 a, the spinner 1160 a, the nozzle 1170 a, the bowl 1180 a and the fixing rotor module 1230 a of FIG. 4 , respectively.
- a flow Fb may be applied to an upper surface of a wafer W, and a liquid chemical 1171 b may be supplied from the nozzle 1170 b.
- the liquid chemical 1171 b may become a discharge liquid chemical 1171 ob discharged along a chemical drain 1163 a.
- the spinner 1160 b may include a grip portion 1161 b, the chemical drain guide 1163 b, a heat insulating block 1164 b, a first rotor portion 1165 b, a sidewall portion 1168 b, a bearing 1166 b, and a fixing portion 1167 b.
- the function of the spinner 1160 b is the same as that of the spinner 1160 a of FIG. 4 and thus will not be described for the sake of convenience.
- the structure of the rinse chamber 140 illustrated in FIG. 6 is an example, and may be modified.
- the rinse chamber 140 may remove particles of a wafer with a phosphoric acid solution (operation S 300 ).
- silicon nitride of the wafer W may remain on the wafer W without being completely etched in the high etch rate chamber 130 , or particles of other materials may remain on the wafer W. Accordingly, the rinse chamber 140 may supply a phosphoric acid solution again through the nozzle 1170 b as the liquid chemical 1171 b in order to remove these particles.
- the wafer may be cleaned with an ammonia mixed solution (operation S 400 ).
- the rinse chamber 140 may clean the wafer W by supplying an ammonia mixed solution to the wafer W.
- the ammonia mixed solution may include, e.g., NH 4 OH:H 2 O 2 :H 2 O.
- the temperature of the ammonia mixed solution may be, e.g., higher than or equal to ambient (room) temperature (e.g., about 20° C.) or may be 150° C. or below.
- the rinse chamber 140 may perform a process at a lower temperature than the high etch rate chamber 130 .
- isopropyl alcohol may be applied to the wafer (operation S 500 ).
- the rinse chamber 140 may apply isopropyl alcohol to the wafer W through the nozzle 1170 b for pretreatment prior to a supercritical drying process.
- a new nozzle different from the existing nozzle 1170 b may be used to prevent chemicals from being mixed with each other.
- the wafer W when the wafer W is taken out of the rinse chamber 140 , the wafer W may be in the wet state.
- a process performed on a wafer W in the supercritical drying chamber 150 will now be described with reference to FIGS. 8 and 9 .
- FIG. 8 illustrates a cross-sectional view of the supercritical drying chamber 150 of the multi-chamber apparatus according to the embodiments.
- FIG. 9 illustrates a flowchart of a process performed in the supercritical drying chamber 150 of the multi-chamber apparatus according to the embodiments.
- the supercritical drying chamber 150 may include the third opening and closing portion 151 , a support 2100 , a fluid inlet 2200 , a first valve 2210 , a fluid outlet 2300 , and a second valve 2310 .
- the third opening and closing portion 151 may be a passage through which a wafer W is put into the supercritical drying chamber 150 .
- the third opening and closing portion 151 may normally be closed to keep the supercritical drying chamber 150 sealed.
- the third opening and closing portion 151 may be temporally opened to allow the wafer W to pass through it.
- the support 2100 may support the wafer W.
- the wafer W may be dried while being fixed by the support 2100 .
- the support 2100 may minimize a contact surface with the wafer W.
- the fluid inlet 2200 may supply a supercritical fluid into the supercritical drying chamber 150 .
- a supercritical fluid flow Fs may reach the wafer W inside the supercritical drying chamber 150 through the fluid inlet 2200 .
- the first valve 2210 may control the opening and closing of the fluid inlet 2200 .
- the first valve 2210 may be opened when the supercritical fluid is supplied and may be closed when the supply of the supercritical fluid ends.
- the fluid outlet 2300 may allow the supercritical fluid to be discharged from the supercritical drying chamber 150 to the outside.
- a supercritical fluid discharge Fo may be achieved through the fluid outlet 2300 .
- the second valve 2310 may control the opening and closing of the fluid outlet 2300 .
- the second valve 2310 may be opened when the supercritical fluid is discharged and may be closed when the discharge of the supercritical fluid ends.
- the supercritical drying chamber 150 may dry a wafer by supplying a supercritical fluid (operation S 600 ).
- the first valve 2210 may be opened to allow the supercritical fluid flow Fs to be applied to the wafer W inside the supercritical drying chamber 150 through the fluid inlet 2200 . Accordingly, the wafer W wet with isopropyl alcohol may be dried.
- the supercritical fluid may be discharged (operation S 700 ).
- the second valve 2310 may be opened to allow the supercritical fluid discharge Fo to flow out of the supercritical drying chamber 150 through the fluid outlet 2300 .
- FIGS. 2 , 10 , and 11 A multi-chamber apparatus according to embodiments will now be described with reference to FIGS. 2 , 10 , and 11 . A repeated description of elements and features identical to those of the above-described embodiments may be omitted or given briefly.
- FIG. 10 illustrates a graph comparing a process time of each chamber of a multi-chamber apparatus according to embodiments.
- FIG. 11 illustrates a plan view of a multi-chamber apparatus according to embodiments.
- a process in a high etch rate chamber 130 may be performed for a first time t 1
- a process in a rinse chamber 140 may be performed for a second time t 2
- a process in a supercritical drying chamber 150 may be performed for a third time t 3 .
- the first time t 1 may be longer than the second time t 2 and the third time t 3 .
- the third time t 3 may be longer than the second time t 2 but shorter than the first time t 1 .
- the process performed in the high etch rate chamber 130 may be the longest, and the process performed in the rinse chamber 140 may be the shortest.
- a ratio of the first time t 1 , the second time t 2 and the third time t 3 may be, e.g., 5:1:3.
- the ratio of the number of the high etch rate chambers 130 , the number of the rinse chambers 140 , and the number of the supercritical drying chambers 150 may be changed to a more efficient ratio than 1:1:1.
- the ratio of the number of the high etch rate chambers 130 , the number of the rinse chambers 140 , and the number of the supercritical drying chambers 150 may be, e.g., 3:1:2.
- FIGS. 2 and 11 six high etch rate chambers 130 , two rinse chambers 140 , and four supercritical drying chambers 150 may be provided. This is to efficiently reduce the process time by considering the size limitation of each chamber.
- FIGS. 11 and 12 A multi-chamber apparatus according to embodiments will now be described with reference to FIGS. 11 and 12 . A repeated description of elements and features identical to those of the above-described embodiments may be omitted or given briefly.
- FIG. 12 illustrates a side view of a multi-chamber apparatus according to embodiments.
- FIG. 12 is a side layout of a multi-chamber apparatus whose chambers arranged in plan view as illustrated in FIG. 11 are stacked in the third direction Z.
- a vertical size of a supercritical drying chamber 150 may be larger than that of a high etch rate chamber 130 or a rinse chamber 140 .
- the ratio of the number of the high etch rate chambers 130 , the number of the rinse chambers 140 and the number of the supercritical drying chambers 150 may be, e.g., 9:3:4, in the multi-chamber apparatus according to the embodiments.
- the high etch rate chambers 130 and the rinse chambers 140 may be stacked in three tiers in the third direction Z, and the supercritical drying chambers 150 may be stacked in two tiers. Accordingly, nine high etch rate chambers 130 , three rinse chambers 140 , and four supercritical drying chambers 150 may be included in the multi-chamber apparatus.
- the number of the high etch rate chambers 130 , the number of the rinse chambers 140 and the number of the supercritical drying chambers 150 may also be 18, 6, and 8, respectively.
- the number of the high etch rate chambers 130 may be increased when the etch rate of the high etch rate chambers 130 is reduced. This may improve the efficiency of a wafer cleaning process, thereby increasing the yield.
- a multi-chamber apparatus will now be described with reference to FIG. 13 .
- a repeated description of elements and features identical to those of the above-described embodiments may be omitted or given briefly.
- FIG. 13 illustrates a plan view of a multi-chamber apparatus according to embodiments.
- a driver 170 of the multi-chamber apparatus may include a third robot arm 173 .
- Both a first robot arm 171 and the third robot arm 173 may move a wafer W in a transfer zone 160 .
- the first robot arm 171 may perform a dry transfer, e.g., may move a dry wafer W.
- the first robot arm 171 may move the wafer W from a buffer zone 120 to a high etch rate chamber 130 via the transfer zone 160 and transfer the wafer W from a supercritical drying chamber 150 to the buffer zone 120 via the transfer zone 160 .
- the third robot arm 173 may perform a wet transfer, e.g., may move a wet wafer
- the third robot arm 173 may move the wafer W from the high etch rate chamber 130 to a rinse chamber 140 via the transfer zone 160 and move the wafer W from the rinse chamber 140 to the supercritical drying chamber 150 via the transfer zone 160 .
- two robot arms may respectively perform a dry transfer and a wet transfer, contamination of a wafer W may be more reliably prevented, and the efficiency of wafer movement may be significantly improved.
- One or more embodiments may provide a multi-chamber apparatus capable of successively performing a wafer cleaning process and a supercritical drying process.
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Abstract
Description
- This is a continuation application based on pending application Ser. No. 16/690,498, filed Nov. 21, 2019, the entire contents of which is hereby incorporated by reference.
- Korean Patent Application No. 10-2019-0048933, filed on Apr. 26, 2019, in the Korean Intellectual Property Office, and entitled: “Multi-Chamber Equipment,” is incorporated by reference herein in its entirety.
- Embodiments relate to a multi-chamber apparatus.
- As the NAND flash memory generation progresses, the number of tiers in which chips are stacked in a device may increase. With the increase in the number of tiers and the reduction in design rules, some drying processes performed using isopropyl alcohol while rotating a wafer may be reaching the limit in terms of the occurrence of pattern leaning. Accordingly, supercritical drying may be performed using a supercritical fluid.
- In addition, a wafer cleaning process for removing silicon nitride of a NAND flash device may be performed in a batch type in which a wafer is immersed in a bath. Some supercritical drying apparatuses may be of a single type, rather than a batch type. An apparatus may perform a wafer cleaning process and a supercritical drying process at once.
- The embodiments may be realized by providing a multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.
- The embodiments may be realized by providing a multi-chamber apparatus for processing a wafer, the apparatus including at least one high etch rate chamber to receive the wafer and to etch silicon nitride with a chemical at a first temperature; at least one rinse chamber to receive the wafer and to clean the wafer with a chemical at a second temperature that is lower than the first temperature; at least one supercritical drying chamber to dry the wafer with a supercritical fluid; a housing in which the at least one high etch rate chamber, the at least one rinse chamber, and the at least one supercritical drying chamber are located; and a robot arm in the housing to move the wafer to the at least one high etch rate chamber, the at least one rinse chamber, and the at least one supercritical drying chamber.
- The embodiments may be realized by providing a multi-chamber apparatus for processing a wafer, the apparatus including at least one first chamber; at least one second chamber; at least one third chamber; a transfer zone outside the at least one first chamber, the at least one second chamber, and the at least one third chamber; a buffer zone outside the at least one first chamber, the at least one second chamber, and the at least one third chamber and connected to the transfer zone; and a driver to move the wafer, wherein the driver moves the wafer from the buffer zone to the at least one first chamber, moves the wafer to the at least one second chamber via the transfer zone after an etching process is performed on the wafer using a phosphoric acid solution in the at least one first chamber, moves the wafer to the at least one third chamber via the transfer zone after a cleaning process is performed on the wafer using an ammonia mixed solution in the at least one second chamber, and moves the wafer to the buffer zone after a supercritical drying process is performed on the wafer in the at least one third chamber.
- Features will be apparent to those of skill in the art by describing in detail exemplary embodiments with reference to the attached drawings in which:
-
FIG. 1 illustrates a plan view of a multi-chamber apparatus according to embodiments; -
FIG. 2 illustrates a side view of the multi-chamber apparatus ofFIG. 1 ; -
FIG. 3 illustrates a sequence of a wafer cleaning process performed by the multi-chamber apparatus according to the embodiments; -
FIG. 4 illustrates a cross-sectional view of a high etch rate chamber of the multi-chamber apparatus according to the embodiments; -
FIG. 5 illustrates a flowchart of a process performed in the high etch rate chamber of the multi-chamber apparatus according to the embodiments; -
FIG. 6 illustrates a cross-sectional view of a rinse chamber of the multi-chamber apparatus according to the embodiments; -
FIG. 7 illustrates a flowchart of a process performed in the rinse chamber of the multi-chamber apparatus according to the embodiments; -
FIG. 8 illustrates a cross-sectional view of a supercritical drying chamber of the multi-chamber apparatus according to the embodiments; -
FIG. 9 illustrates a flowchart of a process performed in the supercritical drying chamber of the multi-chamber apparatus according to the embodiments; -
FIG. 10 illustrates a graph comparing a process time of each chamber of a multi-chamber apparatus according to embodiments; -
FIG. 11 illustrates a plan view of a multi-chamber apparatus according to embodiments; -
FIG. 12 illustrates a side view of a multi-chamber apparatus according to embodiments; and -
FIG. 13 illustrates a plan view of a multi-chamber apparatus according to embodiments. - A multi-chamber apparatus according to embodiments will now be described with reference to
FIGS. 1 and 2 . -
FIG. 1 illustrates a plan view of a multi-chamber apparatus according to embodiments.FIG. 2 illustrates a side view of the multi-chamber apparatus ofFIG. 1 . Referring toFIGS. 1 and 2 , the multi-chamber apparatus according to the embodiments may include ahousing 100, an opening andclosing portion 105, aload port 110, abuffer zone 120, a highetch rate chamber 130, arinse chamber 140, asupercritical drying chamber 150, atransfer zone 160, and adriver 170. A first direction X may be any one of horizontal directions. A second direction Y may be any one of horizontal directions different from the first direction X. The second direction Y may intersect the first direction X. For example, the second direction Y may be perpendicular to the first direction X. A third direction Z may be a direction intersecting the first direction X and the second direction Y. For example, the third direction Z may be a direction perpendicular to both the first direction X and the second direction Y. The third direction Z may be, e.g., a vertical direction. Accordingly, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other. - For example, the multi-chamber apparatus according to the embodiments may have a structure in which a plurality of chambers are stacked in the third direction Z. In an implementation, as illustrated in
FIGS. 1 and 2 , the multi-chamber apparatus may include, e.g., twelve chambers. In the multi-chamber apparatus, six chambers arranged in plan view as illustrated inFIG. 1 may be stacked in two tiers. The multi-chamber apparatus ofFIGS. 1 and 2 may include four highetch rate chambers 130, fourrinse chambers 140, and foursupercritical drying chambers 150. For example,FIG. 2 may be a side layout of the multi-chamber apparatus whose chambers are stacked in two tiers in the third direction Z. - Referring to
FIGS. 1 and 2 , thehousing 100 may contain the highetch rate chamber 130, therinse chamber 140, thesupercritical drying chamber 150, thebuffer zone 120, thetransfer zone 160, and thedriver 170. For example, thehousing 100 may form outer walls of the multi-chamber apparatus according to the embodiments. - In an implementation, the
housing 100 may have a rectangular parallelepiped shape, as illustrated inFIGS. 1 and 2 . In an implementation, the shape of thehousing 100 may vary according to needs and purposes. - The opening and
closing portion 105 may be at a side of thehousing 100. The opening andclosing portion 105 may be a passage through which a wafer W is put into thehousing 100 or removed from the housing 100 (e.g., the wafer W may be insertable and/or removable through the opening and closing portion). The opening andclosing portion 105 may be closed to seal thehousing 100. In an implementation, the opening andclosing portion 105 may be temporally opened when the wafer W is put into thehousing 100. - In an implementation, the apparatus may include, e.g., one, opening and
closing portion 105, as illustrated inFIGS. 1 and 2 . - The
load port 110 may be outside thehousing 100. Theload port 110 may be a place where a wafer W waits for a while (e.g., for a predetermined time) before being put into thehousing 100. A plurality of wafers W may be placed in theload port 110 before being put into thehousing 100. In an implementation, the wafers W may be placed in a stacked state. - The
load port 110 may be provided in plural numbers. In an implementation, as illustrated inFIG. 1 , fourload ports 110 may be present. In an implementation, a plurality of stacked wafers W may be placed in each of theload ports 110. - The
buffer zone 120 may be inside thehousing 100. Thebuffer zone 120 may be a place where a wafer W put into thehousing 100 is first placed. The wafer W may be transferred from theload port 110 to thebuffer zone 120 by asecond robot arm 172. Thesecond robot arm 172 may move the wafer W in the first direction X, the second direction Y, and the third direction Z. - For example, the wafer W may be placed between the
buffer zone 120 and thetransfer zone 160. This may facilitate transfer of the wafer W. For example, thebuffer zone 120 may be connected to thetransfer zone 160, and the wafer may be accommodatable in thebuffer zone 120 for a predetermined time period before being moved to the highetch rate chamber 130, the rinsechamber 140, or thesupercritical drying chamber 150. - The high
etch rate chamber 130 may be inside thehousing 100. The highetch rate chamber 130 may receive the wafer W. The highetch rate chamber 130 may receive the wafer W through a first opening andclosing portion 131 and maintain a sealed environment. - In an implementation, the high
etch rate chamber 130 may, e.g., etch silicon nitride (Si3N4) on the wafer W by using a phosphoric acid (H3PO4) solution. In an implementation, the temperature of the phosphoric acid solution may be, e.g., 150° C. to 300° C. In an implementation, the highetch rate chamber 130 may clean the wafer W with deionized water after the etching process using the phosphoric acid solution. - The rinse
chamber 140 may be inside thehousing 100. The rinsechamber 140 may receive the wafer W through a second opening andclosing portion 141 and maintain a sealed environment. - In an implementation rinse
chamber 140 may, e.g., additionally remove particles remaining on the wafer W by using a phosphoric acid solution and clean the wafer W with an ammonia mixed solution. In an implementation, the ammonia mixed solution may contain, e.g., NH4OH:H2O2:H2O. Next, the rinsechamber 140 may apply isopropyl alcohol (IPA) to the wafer W. Applying the isopropyl alcohol by the rinsechamber 140 may be a pretreatment process prior to a drying process of thesupercritical drying chamber 150. - The
supercritical drying chamber 150 may be inside thehousing 100. Thesupercritical drying chamber 150 may receive the wafer W through a third opening andclosing portion 151 and maintain a sealed environment. - The
supercritical drying chamber 150 may dry the wafer W with a supercritical fluid. Thesupercritical drying chamber 150 may completely dry the wafer W in or from a wet state. - The
transfer zone 160 may be adjacent to the outside of the highetch rate chamber 130, the rinsechamber 140, and thesupercritical drying chamber 150. Thetransfer zone 160 may be connected to thebuffer zone 120. Thetransfer zone 160 may be a passage through which the wafer W is transferred to the highetch rate chamber 130, the rinsechamber 140, thesupercritical drying chamber 150, and thebuffer zone 120. The wafer W may be moved in thetransfer zone 160 by afirst robot arm 171. Thetransfer zone 160 may be a place where thefirst robot arm 171 is installed and moves. - Each of the high
etch rate chamber 130, the rinsechamber 140 and thesupercritical drying chamber 150 may be provided in plural numbers. In an implementation, the highetch rate chambers 130, the rinsechambers 140 and thesupercritical drying chambers 150 may be arranged in the first direction X and the second direction Y. In addition, the highetch rate chambers 130, the rinsechambers 140 and thesupercritical drying chambers 150 may be stacked in the third direction Z. - In an implementation, as illustrated in
FIG. 1 , the highetch rate chambers 130, the rinsechambers 140 and thesupercritical drying chambers 150 may be arranged on both sides of thetransfer zone 160 in the second direction Y. - The
driver 170 may move the wafer W. For example, thedriver 170 may move the wafer W to theload port 110, thebuffer zone 120, the highetch rate chamber 130, the rinsechamber 140, and thesupercritical drying chamber 150. - The
driver 170 may include thefirst robot arm 171 and thesecond robot arm 172. In an implementation, as illustrated inFIG. 1 , thedriver 170 may include, e.g., two robot arms. In an implementation, the number of robot arms included in thedriver 170 may vary. - In an implementation, the multi-chamber apparatus may also move the wafer W using a medium other than robot arms. For example, the
driver 170 may include other media such as a conveyor belt, that can move the wafer W. - The
first robot arm 171 may move the wafer W. For example, thefirst robot arm 171 may move the wafer W from thebuffer zone 120 to the highetch rate chamber 130. In an implementation, thefirst robot arm 171 may move the wafer W from thesupercritical drying chamber 150 to thebuffer zone 120. Thefirst robot arm 171 may be provided in plural numbers. - The
first robot arm 171 may also move the wafer W from the highetch rate chamber 130 to the rinsechamber 140. In an implementation, thefirst robot arm 171 may move the wafer W from the rinsechamber 140 to thesupercritical chamber 150. Thefirst robot arm 171 can move the wafer W in the first direction X, the second direction Y, and the third direction Z. - The
second robot arm 172 may move the wafer W from theload port 110 to thebuffer zone 120. In an implementation, thesecond robot arm 172 may move the wafer W from thebuffer zone 120 to theload port 110. In an implementation, thesecond robot arm 172 may move the dried or dry wafer W. Thesecond robot arm 172 may also be provided in plural numbers. - The
first robot arm 171 may include a plurality of holds orholders 171 a through 171 c. In an implementation, as illustrated inFIG. 1 , thefirst robot arm 171 may include, e.g., threeholders 171 a through 171 c. In an implementation, the number ofholders 171 a through 171 c may vary. - In an implementation, the
first robot arm 171 may include, e.g., afirst holder 171 a, asecond holder 171 b, and athird holder 171 c. Thefirst holder 171 a may move the wafer W from thebuffer zone 120 to the highetch rate chamber 130. Thesecond holder 171 b may move the wafer W from thesupercritical drying chamber 150 to thetransfer zone 160 or thebuffer zone 120. Thefirst holder 171 a and thesecond holder 171 b may move the dry wafer W. - The
third holder 171 c may move the wafer W from the highetch rate chamber 130 to the rinsechamber 140 via thetransfer zone 160. In addition, thethird holder 171 c may be used to move the wafer W from the rinsechamber 140 to thesupercritical drying chamber 150 via thetransfer zone 160. In an implementation, the wafer W may be moved in a wet state in order to prevent a pattern of the wafer W from leaning. - In an implementation, the
first holder 171 a and thesecond holder 171 b may be two separate holders. In an implementation, they can be used as one holder in the multi-chamber apparatus. For example, the two holders may be used to move a dry wafer W, and they can be used interchangeably. In an implementation, thethird holder 171 c may not be used interchangeably with other holders. - By moving a dry wafer W and a wet wafer W using different holders as described above, it is possible to help prevent the dry wafer W from getting wet again.
- In an implementation, the
third holder 171 c may be below thefirst holder 171 a and thesecond holder 171 b (e.g., relative to the third direction Z) in order to prevent the dry wafer W from being contaminated by the wet wafer W. For example, it is possible to prevent a liquid dripping from the wet wafer W from reaching the dry wafer W. - A process in which a wafer W passing through the opening and
closing portion 105 moves to the highetch rate chamber 130 will now be described. For ease of description, the two-tier multi-chamber apparatus will be described as including a lower chamber area located in a lower tier of a two-tier structure and an upper chamber area located in an upper tier of the two-tier structure. - In an implementation, a wafer W moved from the
load port 110 to thebuffer zone 120 by thesecond robot arm 172 may be in a height range of the lower chamber area in the third direction Z. Thefirst robot arm 171 may move to the height range of the lower chamber area in the third direction Z to receive the wafer W from thesecond robot arm 172 and then may move the wafer W to the highetch rate chamber 130. - In an implementation, the wafer W moved from the
load port 110 to thebuffer zone 120 by thesecond robot arm 172 may be located in a height range of the upper chamber area in the third direction Z. Thefirst robot arm 171 may move to the height range of the upper chamber area in the third direction Z to receive the wafer W from thesecond robot arm 172 and then may move the wafer W to the highetch rate chamber 130. - In an implementation, the wafer W moved from the
load port 110 to thebuffer zone 120 by thesecond robot arm 172 may be located at a predetermined height in the third direction Z. - In an implementation, the predetermined height may be a suitable position, which may be allowed in the third direction Z, in the
housing 100. - In an implementation, the predetermined height may be within a height range of a chamber area where a high
etch rate chamber 130 into which the wafer W can be put after a shortest waiting time among a plurality of highetch rate chambers 130 is located. For example, the predetermined height may be within the height range of the upper chamber area or within the height range of the lower chamber area depending on the progress of processes. - The
first robot arm 171 may move to the predetermined height in the third direction Z to receive the wafer W from thesecond robot 172 and then may move the wafer W to the highetch rate chamber 130. - The sequence of a process performed using the multi-chamber apparatus according to the embodiments will now be described with reference to
FIGS. 1 to 3 . -
FIG. 3 illustrates the sequence of a wafer cleaning process performed by the multi-chamber apparatus according to the embodiments. - Referring to
FIGS. 1 through 3 , first, a wafer W may be located in theload port 110. The wafer W may be transferred to thebuffer zone 120 by thesecond robot arm 172. Here, the transfer of the wafer W from theload port 110 to thebuffer zone 120 may be a dry transfer in which the wafer W is transferred in a dry state. - Next, the wafer W may wait in the
buffer zone 120 and then be transferred to the highetch rate chamber 130. Here, the wafer W may be transferred by thefirst robot arm 171. The transfer of the wafer W from thebuffer zone 120 to the highetch rate chamber 130 may be a dry transfer in which the wafer W is transferred in a dry state. The wafer W may be transferred to the highetch rate chamber 130 via thetransfer zone 160 or may be transferred directly from thebuffer zone 120 to the highetch rate chamber 130. To transfer the wafer W directly from thebuffer zone 120 to the highetch rate chamber 130, the first opening andclosing portion 131 of the highetch rate chamber 130 may be formed or open toward thebuffer zone 120, or there may be a separate opening and closing portion different from the first opening andclosing portion 131 formed or open toward thetransfer zone 160. In an implementation, the wafer W may be moved by thefirst holder 171 a of thefirst robot arm 171. - Next, the wafer W that has gone through a process in the high
etch rate chamber 130 may be transferred to thetransfer zone 160. Here, the wafer W may be moved by thethird holder 171 c of thefirst robot arm 171. The transfer of the wafer W from the highetch rate chamber 130 to thetransfer zone 160 may be a wet transfer in which the wafer W is transferred in a wet state. - Next, the wafer W may be transferred from the
transfer zone 160 to the rinsechamber 140. In an implementation, the wafer W may be continuously moved by thethird holder 171 c of thefirst robot arm 171. The transfer of the wafer W from thetransfer zone 160 to the rinsechamber 140 may be a wet transfer in which the wafer W is transferred in a wet state. - Next, the wafer W that has gone through a process in the rinse
chamber 140 may be transferred again to thetransfer zone 160. Here, the wafer W may be moved by thethird holder 171 c of thefirst robot arm 171. The transfer of the wafer W from the rinsechamber 140 to thetransfer zone 160 may be a wet transfer in which the wafer W is transferred in a wet state. - Next, the wafer W may be transferred from the
transfer zone 160 to thesupercritical drying chamber 150. Here, the wafer W may be continuously moved by thethird holder 171 c of thefirst robot arm 171. The transfer of the wafer W from thetransfer zone 160 to thesupercritical drying chamber 150 may be a wet transfer in which the wafer W is transferred in a wet state. - Next, the wafer W that has gone through a process in the
supercritical drying chamber 150 may be transferred again to thetransfer zone 160. Here, the wafer W may be moved by thesecond holder 171 b of thefirst robot arm 171. The transfer of the wafer W from thesupercritical drying chamber 150 to thetransfer zone 160 may be a dry transfer in which the wafer W is transferred in a dry state. - Next, the wafer W may be transferred from the
transfer zone 160 to thebuffer zone 120. In an implementation, the wafer W may be continuously moved by thesecond holder 171 b of thefirst robot arm 171. The transfer of the wafer W from thetransfer zone 160 to thebuffer zone 180 may be a dry transfer in which the wafer W is transferred in a dry state. - In an implementation, the wafer W may be transferred from the
buffer zone 120 back to theload port 110 by thesecond robot arm 172. - As described above, a part for performing a wet transfer and a part for performing a dry transfer may be strictly separated from each other in the
driver 170. For example, thethird holder 171 c may be exclusively responsible for a wet transfer, and thefirst holder 171 a, thesecond holder 171 b and thesecond robot arm 172 may be responsible for a dry transfer. For example, it is possible to prevent a dried wafer W from getting wet again during a transfer. - A process performed on a wafer W in the high
etch rate chamber 130 will now be described with reference toFIGS. 4 and 5 . -
FIG. 4 illustrates a cross-sectional view of the highetch rate chamber 130 of the multi-chamber apparatus according to the embodiments.FIG. 5 illustrates a flowchart of a process performed in the highetch rate chamber 130 of the multi-chamber apparatus according to the embodiments. - First, referring to
FIG. 4 , the highetch rate chamber 130 may include ahousing 1100 a, aspinner 1160 a, anozzle 1170 a, abowl 1180 a, and a fixing rotor module 1230 a. - A first direction X may be any one of horizontal directions. A second direction
- Y may be any one of horizontal directions different from the first direction X. The second direction Y may intersect the first direction X. For example, the second direction Y may be perpendicular to the first direction X. A third direction Z may be a direction intersecting the first direction X and the second direction Y. For example, the third direction Z may be a direction perpendicular to both the first direction X and the second direction Y. The third direction Z may be, for example, a vertical direction. Accordingly, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other.
- The
housing 1100 a may be located under a wafer W. For example, thehousing 1100 a and the wafer W may be successively arranged in the third direction Z. Thehousing 1100 a may heat a lower surface of the wafer W. An upper surface of thehousing 1100 a may be adjacent to the lower surface of the wafer W. - The
housing 1100 a may fix and support the wafer W. In addition, thehousing 1100 a may heat the wafer W. - The
spinner 1160 a may include agrip portion 1161 a, achemical drain guide 1163 a, aheat insulating block 1164 a, afirst rotor portion 1165 a, asidewall portion 1168 a, a bearing 1166 a, and a fixing portion 1167 a. - The
grip portion 1161 a may be in contact with sides of the wafer W. The grip portion 116 a may be fixed to the wafer W by directly contacting the sides of the wafer W. For example, thegrip portion 1161 a may rotate together with the wafer W. - The
spinner 1160 a may rotate the wafer W at a suitable speed. This is because if the rotational speed of thespinner 1160 a were to be too high, an edge portion of the wafer W could relatively cooled, resulting in a non-uniform temperature distribution. In this case, an etch rate could also be different in a central portion and the edge portion of the wafer W. - The
grip portion 1161 a may include a heat insulating material. When the wafer W is heated by thehousing 1100 a, the grip portion 116 a may block the transfer of heat, thereby preventing thermal damage to other parts of the highetch rate chamber 130. - The
chemical drain guide 1163 a may guide a drain path of a liquid chemical 1171 a. Thechemical drain guide 1163 a may be connected to thegrip portion 1161 a. The liquid chemical 1171 a may be pushed to the sides of the wafer W by a flow Fa after being used in an etching process on an upper surface of the wafer W. - Then, the liquid chemical 1171 a may reach the
chemical drain guide 1163 a via thegrip portion 1161 a on the sides of the wafer W and become a discharge liquid chemical 1171 oa. The discharge liquid chemical 1171 oa may be discharged to the outside along thechemical drain guide 1163 a. - The
chemical drain guide 1163 a may be located at a position lower than thebowl 1180 a, and it may help prevent the liquid chemical 1171 a and the discharge liquid chemical 1171 oa from leaking to the outside. This can increase the durability of the highetch rate chamber 130 and prevent damage due to the discharge liquid chemical 1171 oa. - In addition, the
chemical drain guide 1163 a may be further away from the wafer W than other elements of thespinner 1160 a, e.g., theheat insulating block 1164 a, thefirst rotor portion 1165 a, thesidewall portion 1168 a, the bearing 1166 a, and the fixing portion 1167 a. For example, the discharge liquid chemical 1171 oa may be prevented from damaging theheat insulating block 1164 a, thefirst rotor portion 1165 a, thesidewall portion 1168 a, the bearing 1166 a, and the fixing portion 1167 a. - The
heat insulating block 1164 a may constitute sidewalls of thespinner 1160 a between thegrip portion 1161 a and thechemical drain guide 1163 a. Theheat insulating block 1164 a may be made of a heat insulating material to block the heat received by thegrip portion 1161 a and thechemical drain guide 1163 a from being transmitted to other elements of thespinner 1160 a. - In an implementation, as illustrated in
FIG. 4 , theheat insulating block 1164 a may be located at a position in direct contact with thegrip portion 1161 a and thechemical drain guide 1163 a. In an implementation, theheat insulating block 1164 a can be located at any position in thespinner 1160 a as needed. - In an implementation, as illustrated in
FIG. 4 , theheat insulating block 1164 a may be a single element. In an implementation, theheat insulating block 1164 a may also be disposed as a plurality of elements in a plurality of parts. - The
first rotor portion 1165 a may rotate thespinner 1160 a in a magnetic levitation manner, like asecond rotor portion 1210 a to be described below. Thefirst rotor portion 1165 a may be fixed to theheat insulating block 1164 a, thesidewall portion 1168 a, and thegrip portion 1161 a of thespinner 1160 a, and the rotation of thefirst rotor portion 1165 a may cause theentire spinner 1160 a to rotate. For example, the wafer W may also rotate together with thespinner 1160 a. Here, thehousing 1100 a may rotate together with thespinner 1160 a, or only thespinner 1160 a and the wafer W may rotate while thehousing 1100 a is fixed. If thehousing 1100 a is fixed, the wafer W and thehousing 1100 a may be spaced apart from each other. - The
first rotor portion 1165 a may include a magnetic substance. Thefirst rotor portion 1165 a may generate a rotational force through a magnetic force, together with thesecond rotor portion 1210 a which also includes a magnetic substance. - The
sidewall portion 1168 a may be in contact with thefirst rotor portion 1165 a to form the sidewalls of thespinner 1160 a. In an implementation, as illustrated inFIG. 4 , thesidewall portion 1168 a may be located between thefirst rotor portion 1165 a and the bearing 1166 a. In an implementation, thesidewall portion 1168 a may also include all portions constituting the sidewalls of thespinner 1160 a. For example, thesidewall portion 1168 a may be a single element as illustrated inFIG. 4 or may include a plurality of elements. - In an implementation, the bearing 1166 a may be between the
sidewall portion 1168 a and the fixing portion 1167 a. In an implementation, the bearing 1166 a may be at any position between the fixing portion 1167 a that is fixed and thefirst rotor portion 1165 a that is rotated. - The bearing 1166 a allows the
spinner 1160 a to rotate. For example, the bearing 1166 a may be a minimum element for enabling thespinner 1160 a to rotate even though thespinner 1160 a includes the fixed fixing portion 1167 a. - The bearing 1166 a may rotate as the
first rotor portion 1165 a rotates. The bearing 1166 a may simultaneously connect the fixing portion 1167 a and thesidewall portion 1168 a, thefirst rotor portion 1165 a, theheat insulating block 1164 a, thegrip portion 1161 a, and thechemical drain guide 1163 a. Accordingly, thespinner 1160 a may be rotated while being fixed. - The fixing portion 1167 a may be in a lower part of the
spinner 1160 a to fix and support thespinner 1160 a. The fixing portion 1167 a may not rotate. Instead, the fixing portion 1167 a may be connected to the bearing 1166 a so as to allow a portion of thespinner 1160 a to rotate. - Accordingly, some portions of the
spinner 1160 a excluding the fixing portion 1167 a may rotate, thereby rotating the wafer W. - The
nozzle 1170 a may be located above the wafer W and thespinner 1160 a. Thenozzle 1170 a may supply the liquid chemical 1171 a to the upper surface of the wafer W. Thenozzle 1170 a may drop the liquid chemical 1171 a onto the central portion of the wafer W. The wafer W may be rotated to spread the dropped liquid chemical 1171 a over the entire upper surface of the wafer W. The highetch rate chamber 130 may apply the flow Fa downward (e.g., in the third direction Z) in order to spread the liquid chemical 1171 a on the fixed wafer W. Accordingly, the liquid chemical 1171 a may be moved from the center of the upper surface of the wafer W to the periphery. - In an implementation, as illustrated in
FIG. 4 , thenozzle 1170 a may spray the liquid chemical 1171 a downward above the upper surface of the wafer W. In an implementation, thenozzle 1170 a may also be located on a side of the wafer W at a position higher than the upper surface of the wafer W. Thenozzle 1170 a may eject the liquid chemical 1171 a in a lateral direction to supply the liquid chemical 1171 a to the upper surface of the wafer W. - The liquid chemical 1171 a may be supplied by the
nozzle 1170 a. Thenozzle 1170 a may eject the liquid chemical 1171 a to the upper surface of the wafer W at an appropriate amount and speed. This is because if the liquid chemical 1171 a were to be provided too much or too fast, a temperature rise of the wafer W may be delayed that much longer. Thebowl 1180 a may be located outside the wafer W, thespinner 1160 a, and thehousing 1100 a. Thebowl 1180 a may extend in the third direction Z to a height higher than the upper surface of the wafer W. Thebowl 1180 a may block the outflow of the liquid chemical 1171 a and fumes produced by vaporization of the liquid chemical 1171 a. Thebowl 1180 a may help prevent other parts of the highetch rate chamber 130 from being damaged by the liquid chemical 1171 a and the fumes. - The fixing rotor module 1230 a may be spaced apart from the
spinner 1160 a. The fixing rotor module 1230 a may surround thespinner 1160 a. In an implementation, the fixing rotor module 1230 a may be located between thechemical drain guide 1163 a and thefirst rotor portion 1165 a. - The fixing rotor module 1230 a may include the
second rotor portion 1210 a and a rotor support portion 1220 a. Thesecond rotor portion 1210 a may rotate thespinner 1160 a in a magnetic levitation manner, like thefirst rotor portion 1165 a described above. Thesecond rotor portion 1210 a may be spaced apart from theheat insulating block 1164 a, thesidewall portion 1168 a, and thegrip portion 1161 a of thespinner 1160 a. In addition, thesecond rotor portion 1210 a is connected to the rotor support portion 1220 a. - The
second rotor portion 1210 a may include a magnetic substance. Thesecond rotor portion 1210 a may generate a rotational force through a magnetic force, together with thefirst rotor portion 1165 a. - The above configuration of the high
etch rate chamber 130 is an example, and may be modified. - Referring to
FIGS. 4 and 5 , the highetch rate chamber 130 etches silicon nitride of a wafer with a phosphoric acid solution (operation S100). - For example, the silicon nitride may be a sacrificial layer or an etch stop layer in a semiconductor manufacturing process. The silicon nitride may be etched by the phosphoric acid solution.
- The high
etch rate chamber 130 may remove most of the silicon nitride, and a cleaning process may be performed at a high temperature. For example, the phosphoric acid solution may be supplied at a high temperature of 150° C. to 300° C. - Referring to
FIG. 4 , the liquid chemical 1171 a supplied by thenozzle 1170 a may be the phosphoric acid solution. - Next, referring again to
FIG. 5 , the wafer may be cleaned with deionized wafer (operation S200). - For example, referring to
FIG. 4 , when most of the silicon nitride of the wafer W is etched by the phosphoric acid solution, the highetch rate chamber 130 may clean the wafer W by supplying deionized water to the wafer W. Accordingly, when the wafer W is taken out of the highetch rate chamber 130, it may be in a wet state. - A process performed on a wafer W in the rinse
chamber 140 will now be described with reference toFIGS. 6 and 7 . -
FIG. 6 illustrates a cross-sectional view of the rinsechamber 140 of the multi-chamber apparatus according to the embodiments.FIG. 7 illustrates a flowchart of a process performed in the rinsechamber 140 of the multi-chamber apparatus according to the embodiments. - First, referring to
FIG. 6 , the rinsechamber 140 may include ahousing 1100 b, aspinner 1160 b, anozzle 1170 b, abowl 1180 b, and a fixingrotor module 1230 b. In an implementation, thehousing 1100 b, thespinner 1160 b, thenozzle 1170 b, thebowl 1180 b and the fixingrotor module 1230 b ofFIG. 6 may have the same or similar structure as thehousing 1100 a, thespinner 1160 a, thenozzle 1170 a, thebowl 1180 a and the fixing rotor module 1230 a ofFIG. 4 , respectively. - In the rinse
chamber 140, a flow Fb may be applied to an upper surface of a wafer W, and aliquid chemical 1171 b may be supplied from thenozzle 1170 b. Theliquid chemical 1171 b may become a discharge liquid chemical 1171 ob discharged along achemical drain 1163 a. - The
spinner 1160 b may include agrip portion 1161 b, the chemical drain guide 1163 b, aheat insulating block 1164 b, afirst rotor portion 1165 b, asidewall portion 1168 b, abearing 1166 b, and a fixingportion 1167 b. The function of thespinner 1160 b is the same as that of thespinner 1160 a ofFIG. 4 and thus will not be described for the sake of convenience. - The structure of the rinse
chamber 140 illustrated inFIG. 6 is an example, and may be modified. - Referring to
FIGS. 6 and 7 , the rinsechamber 140 may remove particles of a wafer with a phosphoric acid solution (operation S300). - For example, referring to
FIG. 6 , silicon nitride of the wafer W may remain on the wafer W without being completely etched in the highetch rate chamber 130, or particles of other materials may remain on the wafer W. Accordingly, the rinsechamber 140 may supply a phosphoric acid solution again through thenozzle 1170 b as theliquid chemical 1171 b in order to remove these particles. - Next, referring again to
FIG. 7 , the wafer may be cleaned with an ammonia mixed solution (operation S400). - For example, referring to
FIG. 6 , after etching the silicon nitride of the wafer W once more with the phosphoric acid solution, the rinsechamber 140 may clean the wafer W by supplying an ammonia mixed solution to the wafer W. In an implementation, the ammonia mixed solution may include, e.g., NH4OH:H2O2:H2O. - The temperature of the ammonia mixed solution may be, e.g., higher than or equal to ambient (room) temperature (e.g., about 20° C.) or may be 150° C. or below. For example, the rinse
chamber 140 may perform a process at a lower temperature than the highetch rate chamber 130. - Next, referring again to
FIG. 7 , isopropyl alcohol may be applied to the wafer (operation S500). - For example, referring to
FIG. 6 , the rinsechamber 140 may apply isopropyl alcohol to the wafer W through thenozzle 1170 b for pretreatment prior to a supercritical drying process. In an implementation, a new nozzle different from the existingnozzle 1170 b may be used to prevent chemicals from being mixed with each other. - For example, when the wafer W is taken out of the rinse
chamber 140, the wafer W may be in the wet state. - A process performed on a wafer W in the
supercritical drying chamber 150 will now be described with reference toFIGS. 8 and 9 . -
FIG. 8 illustrates a cross-sectional view of thesupercritical drying chamber 150 of the multi-chamber apparatus according to the embodiments.FIG. 9 illustrates a flowchart of a process performed in thesupercritical drying chamber 150 of the multi-chamber apparatus according to the embodiments. - First, referring to
FIG. 8 , thesupercritical drying chamber 150 may include the third opening andclosing portion 151, asupport 2100, afluid inlet 2200, afirst valve 2210, afluid outlet 2300, and asecond valve 2310. - The third opening and
closing portion 151 may be a passage through which a wafer W is put into thesupercritical drying chamber 150. The third opening andclosing portion 151 may normally be closed to keep thesupercritical drying chamber 150 sealed. When the wafer W is put into or removed from thesupercritical drying chamber 150, the third opening andclosing portion 151 may be temporally opened to allow the wafer W to pass through it. - The
support 2100 may support the wafer W. The wafer W may be dried while being fixed by thesupport 2100. In an implementation, thesupport 2100 may minimize a contact surface with the wafer W. - The
fluid inlet 2200 may supply a supercritical fluid into thesupercritical drying chamber 150. A supercritical fluid flow Fs may reach the wafer W inside thesupercritical drying chamber 150 through thefluid inlet 2200. - The
first valve 2210 may control the opening and closing of thefluid inlet 2200. For example, thefirst valve 2210 may be opened when the supercritical fluid is supplied and may be closed when the supply of the supercritical fluid ends. - The
fluid outlet 2300 may allow the supercritical fluid to be discharged from thesupercritical drying chamber 150 to the outside. A supercritical fluid discharge Fo may be achieved through thefluid outlet 2300. - The
second valve 2310 may control the opening and closing of thefluid outlet 2300. For example, thesecond valve 2310 may be opened when the supercritical fluid is discharged and may be closed when the discharge of the supercritical fluid ends. - Referring to
FIG. 9 , thesupercritical drying chamber 150 may dry a wafer by supplying a supercritical fluid (operation S600). - For example, referring to
FIG. 8 , thefirst valve 2210 may be opened to allow the supercritical fluid flow Fs to be applied to the wafer W inside thesupercritical drying chamber 150 through thefluid inlet 2200. Accordingly, the wafer W wet with isopropyl alcohol may be dried. - Next, referring again to
FIG. 9 , the supercritical fluid may be discharged (operation S700). - For example, referring to
FIG. 8 , thesecond valve 2310 may be opened to allow the supercritical fluid discharge Fo to flow out of thesupercritical drying chamber 150 through thefluid outlet 2300. - A multi-chamber apparatus according to embodiments will now be described with reference to
FIGS. 2, 10, and 11 . A repeated description of elements and features identical to those of the above-described embodiments may be omitted or given briefly. -
FIG. 10 illustrates a graph comparing a process time of each chamber of a multi-chamber apparatus according to embodiments.FIG. 11 illustrates a plan view of a multi-chamber apparatus according to embodiments. - Referring to
FIG. 10 , a process in a highetch rate chamber 130 may be performed for a first time t1, a process in a rinsechamber 140 may be performed for a second time t2, and a process in asupercritical drying chamber 150 may be performed for a third time t3. - In an implementation, the first time t1 may be longer than the second time t2 and the third time t3. In an implementation, the third time t3 may be longer than the second time t2 but shorter than the first time t1. For example, the process performed in the high
etch rate chamber 130 may be the longest, and the process performed in the rinsechamber 140 may be the shortest. In an implementation, a ratio of the first time t1, the second time t2 and the third time t3 may be, e.g., 5:1:3. - In an implementation, the ratio of the number of the high
etch rate chambers 130, the number of the rinsechambers 140, and the number of thesupercritical drying chambers 150 may be changed to a more efficient ratio than 1:1:1. - In an implementation, as illustrated in
FIGS. 2 and 11 , in the multi-chamber apparatus, the ratio of the number of the highetch rate chambers 130, the number of the rinsechambers 140, and the number of thesupercritical drying chambers 150 may be, e.g., 3:1:2. - For example, as illustrated in
FIGS. 2 and 11 , six highetch rate chambers 130, two rinsechambers 140, and foursupercritical drying chambers 150 may be provided. This is to efficiently reduce the process time by considering the size limitation of each chamber. - A multi-chamber apparatus according to embodiments will now be described with reference to
FIGS. 11 and 12 . A repeated description of elements and features identical to those of the above-described embodiments may be omitted or given briefly. -
FIG. 12 illustrates a side view of a multi-chamber apparatus according to embodiments.FIG. 12 is a side layout of a multi-chamber apparatus whose chambers arranged in plan view as illustrated inFIG. 11 are stacked in the third direction Z. - Referring to
FIGS. 11 and 12 , a vertical size of asupercritical drying chamber 150 may be larger than that of a highetch rate chamber 130 or a rinsechamber 140. In view of these limitations, the ratio of the number of the highetch rate chambers 130, the number of the rinsechambers 140 and the number of thesupercritical drying chambers 150 may be, e.g., 9:3:4, in the multi-chamber apparatus according to the embodiments. - For example, the high
etch rate chambers 130 and the rinsechambers 140 may be stacked in three tiers in the third direction Z, and thesupercritical drying chambers 150 may be stacked in two tiers. Accordingly, nine highetch rate chambers 130, three rinsechambers 140, and foursupercritical drying chambers 150 may be included in the multi-chamber apparatus. - In an implementation, the number of the high
etch rate chambers 130, the number of the rinsechambers 140 and the number of thesupercritical drying chambers 150 may also be 18, 6, and 8, respectively. - In an implementation, the number of the high
etch rate chambers 130 may be increased when the etch rate of the highetch rate chambers 130 is reduced. This may improve the efficiency of a wafer cleaning process, thereby increasing the yield. - A multi-chamber apparatus according to embodiments will now be described with reference to
FIG. 13 . A repeated description of elements and features identical to those of the above-described embodiments may be omitted or given briefly. -
FIG. 13 illustrates a plan view of a multi-chamber apparatus according to embodiments. - Referring to
FIG. 13 , adriver 170 of the multi-chamber apparatus according to the embodiments may include athird robot arm 173. - Both a
first robot arm 171 and thethird robot arm 173 may move a wafer W in atransfer zone 160. Thefirst robot arm 171 may perform a dry transfer, e.g., may move a dry wafer W. For example, thefirst robot arm 171 may move the wafer W from abuffer zone 120 to a highetch rate chamber 130 via thetransfer zone 160 and transfer the wafer W from asupercritical drying chamber 150 to thebuffer zone 120 via thetransfer zone 160. - The
third robot arm 173 may perform a wet transfer, e.g., may move a wet wafer - W. For example, the
third robot arm 173 may move the wafer W from the highetch rate chamber 130 to a rinsechamber 140 via thetransfer zone 160 and move the wafer W from the rinsechamber 140 to thesupercritical drying chamber 150 via thetransfer zone 160. - According to an embodiment, two robot arms may respectively perform a dry transfer and a wet transfer, contamination of a wafer W may be more reliably prevented, and the efficiency of wafer movement may be significantly improved.
- One or more embodiments may provide a multi-chamber apparatus capable of successively performing a wafer cleaning process and a supercritical drying process.
- Example embodiments have been disclosed herein, and although specific terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purpose of limitation. In some instances, as would be apparent to one of ordinary skill in the art as of the filing of the present application, features, characteristics, and/or elements described in connection with a particular embodiment may be used singly or in combination with features, characteristics, and/or elements described in connection with other embodiments unless otherwise specifically indicated. Accordingly, it will be understood by those of skill in the art that various changes in form and details may be made without departing from the spirit and scope of the present invention as set forth in the following claims.
Claims (32)
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US18/214,096 US20230343613A1 (en) | 2019-04-26 | 2023-06-26 | Multi-chamber apparatus |
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KR1020190048933A KR102636979B1 (en) | 2019-04-26 | 2019-04-26 | Multi-chamber equipment |
KR10-2019-0048933 | 2019-04-26 | ||
US16/690,498 US11721565B2 (en) | 2019-04-26 | 2019-11-21 | Multi-chamber apparatus |
US18/214,096 US20230343613A1 (en) | 2019-04-26 | 2023-06-26 | Multi-chamber apparatus |
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US16/690,498 Division US11721565B2 (en) | 2019-04-26 | 2019-11-21 | Multi-chamber apparatus |
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US16/690,498 Active 2041-02-18 US11721565B2 (en) | 2019-04-26 | 2019-11-21 | Multi-chamber apparatus |
US18/214,096 Abandoned US20230343613A1 (en) | 2019-04-26 | 2023-06-26 | Multi-chamber apparatus |
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KR101958874B1 (en) * | 2008-06-04 | 2019-03-15 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method |
KR102636979B1 (en) * | 2019-04-26 | 2024-02-14 | 삼성전자주식회사 | Multi-chamber equipment |
KR102584514B1 (en) * | 2020-07-09 | 2023-10-06 | 세메스 주식회사 | Apparatus for transferring substrate, apparatus and method for treating substrate |
KR102473692B1 (en) * | 2021-04-15 | 2022-12-02 | (주)에스티아이 | Substrate etching system |
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EP1243021A2 (en) * | 1999-11-02 | 2002-09-25 | Tokyo Electron Limited | Method and apparatus for supercritical processing of a workpiece |
JP3725051B2 (en) * | 2001-07-27 | 2005-12-07 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US20030084918A1 (en) | 2001-11-07 | 2003-05-08 | Kim Yong Bae | Integrated dry-wet processing apparatus and method for removing material on semiconductor wafers using dry-wet processes |
US6843855B2 (en) | 2002-03-12 | 2005-01-18 | Applied Materials, Inc. | Methods for drying wafer |
KR20060059019A (en) * | 2004-11-26 | 2006-06-01 | 주식회사 하이닉스반도체 | Metal contact formation method of semiconductor device |
JP5088335B2 (en) * | 2009-02-04 | 2012-12-05 | 東京エレクトロン株式会社 | Substrate transfer apparatus and substrate processing system |
JP4862903B2 (en) * | 2009-03-06 | 2012-01-25 | 東京エレクトロン株式会社 | Substrate processing apparatus, filter medium regeneration method, and storage medium |
RU2494200C2 (en) * | 2009-03-31 | 2013-09-27 | Андрей Виленович Любомирский | Facing panel (versions) |
JP5644219B2 (en) * | 2010-07-12 | 2014-12-24 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
KR101156742B1 (en) | 2010-09-06 | 2012-06-14 | 주식회사 에이앤디코퍼레이션 | Chamber system capable of continuous process |
KR20120028672A (en) | 2010-09-15 | 2012-03-23 | 삼성전자주식회사 | Substrate treatment apparatus and method using the same |
WO2012165377A1 (en) * | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | Method for treating substrate, device for treating substrate and storage medium |
US9587880B2 (en) * | 2012-05-31 | 2017-03-07 | Semes Co., Ltd. | Apparatus and method for drying substrate |
JP6068029B2 (en) * | 2012-07-18 | 2017-01-25 | 株式会社東芝 | Substrate processing method, substrate processing apparatus, and storage medium |
TWI627667B (en) * | 2012-11-26 | 2018-06-21 | 應用材料股份有限公司 | Stiction-free drying process with contaminant removal for high-aspect-ratio semiconductor device structures |
CN104813438B (en) | 2012-11-28 | 2017-07-25 | 盛美半导体设备(上海)有限公司 | The cleaning method and device of semi-conductor silicon chip |
US10068781B2 (en) | 2014-10-06 | 2018-09-04 | Lam Research Corporation | Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma |
KR101757812B1 (en) * | 2015-05-29 | 2017-07-14 | 세메스 주식회사 | System for regenerating the phosphoric acid solution, and Apparatus and method for treating substrate |
JP6740098B2 (en) * | 2016-11-17 | 2020-08-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method and storage medium |
KR102225957B1 (en) * | 2018-09-12 | 2021-03-11 | 세메스 주식회사 | An apparatus for treating a substrate |
KR102636979B1 (en) * | 2019-04-26 | 2024-02-14 | 삼성전자주식회사 | Multi-chamber equipment |
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- 2019-04-26 KR KR1020190048933A patent/KR102636979B1/en active Active
- 2019-11-21 US US16/690,498 patent/US11721565B2/en active Active
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2023
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US20200343113A1 (en) | 2020-10-29 |
KR20200125123A (en) | 2020-11-04 |
US11721565B2 (en) | 2023-08-08 |
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