US20160377262A1 - System and method for providing color light sources in proximity to predetermined wavelength conversion structures - Google Patents
System and method for providing color light sources in proximity to predetermined wavelength conversion structures Download PDFInfo
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- US20160377262A1 US20160377262A1 US15/261,351 US201615261351A US2016377262A1 US 20160377262 A1 US20160377262 A1 US 20160377262A1 US 201615261351 A US201615261351 A US 201615261351A US 2016377262 A1 US2016377262 A1 US 2016377262A1
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
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- F21V19/006—Fastening of light sources or lamp holders of point-like light sources, e.g. incandescent or halogen lamps, with screw-threaded or bayonet base
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
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- H—ELECTRICITY
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Definitions
- FIG. 8 is a simplified diagram illustrating an optical device having violet and blue LEDs according to an embodiment of the present disclosure.
- FIG. 15 is a block diagram of a system to perform certain operations to fabricate an optical device, according to an embodiment of the present disclosure.
- polar GaN submounts e.g., submount 111 where the largest area surface is nominally an (h k l) plane where
- a current monitor module 1405 is electrically coupled to the first array and second array of radiation emitting devices such that the current monitor module can determine a first current level associated with the first array of radiation emitting devices and a second current level associated with the second array of radiation emitting devices; and a signal compensating module 1414 electrically coupled to the current monitor module 1405 , the signal compensating module being configured to generate a first compensation factor signal based on a difference between the first current level and a first reference current level.
- the rectifier module 1416 and the signal compensating module are mounted to a printed circuit board 1403 .
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Led Device Packages (AREA)
Abstract
Description
- This application is a continuation application of U.S. application Ser. No. 14/531,545, filed on Nov. 3, 2014, which is a continuation-in-part application of U.S. application Ser. No. 14/256,670, filed on Apr. 18, 2014, issued as U.S. Pat. No. 8,905,588, Dec. 19, 2014, which is a continuation application of U.S. application Ser. No. 13/328,978, filed on Dec. 16, 2011, issued as U.S. Pat. No. 8,740,413, on Jun. 3, 2014, which claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Application No. 61/424,562, filed on Dec. 17, 2010; and U.S. application Ser. No. 13/328,978 is a continuation-in-part application of U.S. application Ser. No. 13/019,987, filed on Feb. 2, 2011, which claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Application No. 61/301,193, filed on Feb. 3, 2010; and U.S. application Ser. No. 13/328,978 is a continuation-in-part application of U.S. application Ser. No. 13/014,622, filed on Jan. 26, 2011, which claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Application No. 61/357,849, filed on Jun. 23, 2010; each of which is incorporated by reference in its entirety.
- The present disclosure relates generally to light emitting devices and, more particularly, to techniques for using wavelength conversion materials with light emitting devices.
- The present disclosure is directed to optical devices. The disclosure provides a light source that includes two or more layers of phosphor materials excited by radiation sources that emit radiations in two or more wavelengths, with at least one of the radiation wavelength less than 440 nm. In a specific embodiment where LED radiation sources are used, LED radiation sources that emit ultra-violet (UV), violet (V), or near-ultraviolet (NUV) radiation are used to excite blue phosphor material. In various embodiments, red and green phosphor materials are used and the LED radiation sources are arranged in a specific pattern. In other embodiments red, green, and blue phosphor materials are used.
- In the late 1800's, Thomas Edison invented the light bulb. The conventional light bulb, commonly called the “Edison bulb”, has been used for over one hundred years. The conventional light bulb uses a tungsten filament enclosed in a glass bulb sealed in a base, which is screwed into a socket. The socket is coupled to an AC power or DC power source. The conventional light bulb can be found commonly in houses, buildings, and outdoor lightings, and other areas requiring light. Unfortunately, drawbacks exist with the conventional Edison light bulb. That is, the conventional light bulb dissipates much thermal energy. More than 90% of the energy used for the conventional light bulb dissipates as thermal energy. Additionally, the conventional light bulb eventually fails due to evaporation of the tungsten filament.
- Fluorescent lighting overcomes some of the drawbacks of the conventional light bulb. Fluorescent lighting uses an optically clear tube structure filled with a noble gas, and typically also contains mercury. A pair of electrodes is coupled between the gas and to an alternating power source through ballast to excite the mercury. Once the mercury has been excited, it discharges, emitting UV light. Typically, the optically clear tube is coated with phosphors, which are excited by the UV light to provide white light. Many building structures use fluorescent lighting and, more recently, fluorescent lighting has been fitted onto a base structure, which couples into a standard socket.
- Solid state lighting techniques are also known. Solid state lighting relies upon semiconductor materials to produce light emitting diodes (LEDs). At first, red LEDs were used. Modern red LEDs use Aluminum Indium Gallium Phosphide (AlInGaP) semiconductor materials. Most recently, Shuji Nakamura pioneered the use of InGaN materials to produce LEDs emitting light in the blue color range for LEDs. The blue light LEDs led to innovations such as solid state white lighting, the blue laser diode, the Blu-Ray™ DVD player, and other developments. Blue-, violet-, or ultraviolet-emitting devices based on InGaN are used in conjunction with phosphors to provide white LEDs. Other colored LEDs have also been proposed.
- One way of improving solid state light efficiency has been to use phosphor converted LEDs (pcLED) technology, where an LED emits radiation that excites phosphors, which in turn emit light. Unfortunately, conventional pcLEDs have been inadequate, especially for white light for general illumination applications. In particular, blue-excited pcLED configurations have the challenge that blue light leakage must be managed to provide a stable white output. This is difficult because blue light leakage depends on the peak emission wavelength, which shifts with drive current and operating temperature. V- or NUV-excited pcLEDs avoid this problem, but have performance disadvantages due to increased Stokes' loss, as well as cascading conversion loss, since much of the V or NUV light pumps blue phosphor, which then excites green and red phosphors, rather than direct excitation of the green and red phosphors.
- Therefore, it is desirable to have improved techniques for phosphor-based LED devices.
- The present disclosure is directed to optical devices. The disclosure provides a light source that includes two or more layers of phosphor materials excited by radiation sources that emit radiations in two or more wavelengths, with at least one of the radiation wavelengths less than 440 nm. In a specific embodiment where LED radiation sources are used, LED radiation sources that emit ultra-violet (UV), violet (V), or near-ultraviolet (NUV) radiation are used to excite blue phosphor material. In various embodiments, red and green phosphor materials are used and the LED radiation sources are arranged in a specific pattern. In other embodiments, red, green, and blue phosphor materials are used.
- In one embodiment, an optical device includes a submount having a surface. The device includes a first plurality n of radiation sources positioned on the surface configured to emit radiation characterized by a first wavelength with a range between about 380 nm to 470 nm. The device also includes a second plurality m of radiation sources positioned on the surface configured to emit radiation characterized by a second wavelength shorter than the first wavelength. The ratio between m and n is based on a selected wavelength. The device further includes a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources. The first wavelength converting layer is associated with a wavelength emission ranging from 590 nm to 650 nm. The device includes a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources. The second wavelength converting layer is associated with a wavelength emission ranging from 490 nm to 590 nm. The device additionally includes a third wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources. The third wavelength converting layer is associated with a wavelength emission ranging from about 440 nm to about 490 nm.
- In another embodiment, an optical device includes a submount having a surface. The device also includes a first plurality n of radiation sources configured to emit radiation characterized by a first wavelength with a range between about 380 nm to 470 nm. The device also includes a second plurality m of radiation sources configured to emit radiation characterized by a second wavelength shorter than the first wavelength. The second plurality of radiation sources are positioned on the surface and arranged in a specific pattern. The ratio between m and n is based on a selected wavelength. The device also includes a first wavelength converting layer associated with a wavelength emission ranging from 590 nm to 650 nm configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources. The device further includes a second wavelength converting layer associated with a wavelength emission ranging from 490 nm to 590 nm configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources. The device also includes a phosphor pattern associated with a wavelength emission ranging from 440 nm to 490 nm overlaying the second plurality of radiation sources configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources. A further understanding of the nature and advantages of the present disclosure may be realized by reference to the latter portions of the specification and attached drawings.
- In certain aspects, optical devices are provided comprising: an electrical connection to an external power source; a submount comprising a mounting surface; at least one first light emitting diode source, the at least one first light emitting diode source configured to emit radiation characterized by a first wavelength within a range from about 430 nm to about 480 nm, wherein the at least one first light emitting diode source is disposed on the mounting surface, and wherein the at least one first light emitting diode source is electrically coupled to the electrical connection; at least one second light emitting diode source configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, wherein the at least one second light emitting diode source is disposed on the mounting surface; and a first wavelength-converting material positioned in an optical path of radiation from the at least one first light emitting diode source and configured to convert radiation from the first wavelength to radiation at a wavelength within a range from about 500 nm to about 600 nm; wherein the optical device is configured to output radiation from at least the first light emitting diode source, the at least one second light emitting diode source, and the first wavelength-converting material.
- In certain aspects, optical devices are provided comprising: an electrical connection to an external power source; a submount having disposed thereon a reflective pattern to form a mounting surface; a plurality of first light emitting diode sources, at least some of the plurality of first light emitting diode sources configured to emit radiation characterized by a first wavelength within a range from about 430 nm to about 480 nm, wherein the plurality of first light emitting diode sources is disposed on the mounting surface, and wherein the plurality of first light emitting diode sources is electrically coupled to the electrical connection; at least one second light emitting diode source configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, wherein the at least one second light emitting diode source is disposed on the mounting surface; a first wavelength-converting material positioned in an optical path of radiation from at least one of the plurality of first light emitting diode sources and configured to convert radiation from the first wavelength to radiation at a wavelength within a range from about 500 nm to about 600 nm; and a second wavelength-converting material positioned in an optical path of radiation from at least one of the plurality of first light emitting diode sources and configured to convert radiation from the first wavelength to radiation at a wavelength within a range from about 590 nm to about 650 nm; wherein at least one of the plurality of first light emitting diode sources is configured to excite emission from at least one of the first wavelength-converting material and the second wavelength-converting material; and wherein at least one of the at least one second light emitting diode source is configured to excite emission from at least one of the first wavelength-converting material and the second wavelength-converting material.
- In certain aspects, lamps are provided comprising: a base, the base having at least one structural member to provide a mount point; an electrical connection to an external power source; a submount having disposed thereon a reflective pattern to form a mounting surface; a plurality of first light emitting diode sources, at least some of the plurality of first light emitting diode sources configured to emit radiation characterized by a first wavelength within a range from about 430 nm to about 480 nm, wherein the plurality of first light emitting diode sources is disposed on the mounting surface, and wherein the at least one first light emitting diode source is electrically coupled to the electrical connection; at least one second light emitting diode source configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, wherein the at least one second light emitting diode source is disposed on the mounting surface; a first wavelength-converting material positioned in an optical path of radiation from at least one of the plurality of first light emitting diode sources and configured to convert radiation from the first wavelength to radiation at a wavelength within a range from about 500 nm to about 600 nm; and a second wavelength-converting material positioned in an optical path of radiation from at least one of the plurality of first light emitting diode sources and configured to convert radiation from the first wavelength to radiation at a wavelength within a range from about 590 nm to about 650 nm; wherein at least one of the plurality of first light emitting diode sources is configured to excite emission from at least one of the first wavelength-converting material and the second wavelength-converting material; and wherein at least one of the at least one second light emitting diode source is configured to excite emission from at least one of the at least one second light emitting diode source, the first wavelength-converting material, and the second wavelength-converting material.
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FIG. 1A is a simplified diagram illustrating a chip-array-based pcLED apparatus with an RGB phosphor mix for generating white light, according to an embodiment of the disclosure. -
FIG. 1B is a simplified diagram illustrating construction of a radiation source comprised of light emitting diodes, according to some embodiments. -
FIG. 1C is a simplified diagram illustrating an optical device embodied as a light source constructed using an array of LEDs juxtaposed with a cover member, according to some embodiments. -
FIG. 1D is a simplified diagram illustrating an LED lamp having a base to provide a mount point for a light source, according to some embodiments. -
FIG. 2 is a simplified diagram illustrating a chip-array-basedapparatus 200 having green and red wavelength converting material, according to some embodiments. -
FIG. 3A is a simplified diagram illustrating a conversion process, according to some embodiments. -
FIG. 3B is a simplified diagram illustrating a conversion process, according to some embodiments. -
FIG. 4 is a graph illustrating a light process chart by phosphor material, according to some embodiments. -
FIG. 5 is a simplified diagram illustrating an optical device according to an embodiment of the present disclosure. -
FIG. 6 is a simplified diagram illustrating an optical device according to an embodiment of the present disclosure. -
FIG. 7 is a simplified graph illustrating performance of various embodiments of optical devices, according to embodiments of the present disclosure. -
FIG. 8 is a simplified diagram illustrating an optical device having violet and blue LEDs according to an embodiment of the present disclosure. -
FIG. 9 is a simplified diagram illustrating an optical device having violet and patterned blue LEDs according to an embodiment of the present disclosure. -
FIG. 10 is a simplified diagram illustrating an optical device having violet and red LEDs according to an embodiment of the present disclosure. -
FIG. 11 is a simplified diagram illustrating an optical device having violet and red LEDs according to an embodiment of the present disclosure. -
FIG. 12A is a simplified diagram illustrating an optical device having red, green, and blue LEDs disposed within recesses, according to an embodiment of the present disclosure. -
FIG. 12B is a simplified diagram illustrating an optical device having red, green, and blue LEDs disposed between barriers, according to an embodiment of the present disclosure. -
FIG. 13 is an exploded view of an LED lamp, according to some embodiments. -
FIG. 14 is an illustration of an LED system comprising an LED lamp, according to an embodiment of the present disclosure. -
FIG. 15 is a block diagram of a system to perform certain operations to fabricate an optical device, according to an embodiment of the present disclosure. - Various types of phosphor-converted (pc) light-emitting diodes (LEDs) have been proposed in the past. Conventional pcLEDs include a blue LED with a yellow phosphor. UV or V-based phosphor-converted (pc) LEDs exhibit certain advantages in performance (compared to blue-pumped pcLEDs) such as high color rendering (broadband spectrum comprising phosphor emission) and accurate color control (e.g., as the violet “pump” light contributes little to the chromaticity).
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FIG. 1A is a simplified diagram illustrating a chip-array-based pcLED apparatus with an RGB phosphor mix for generating white light. As shown inFIG. 1A , thepcLED apparatus 100 includes three layers of phosphor materials:blue phosphor material 104,red phosphor material 103, andgreen phosphor material 102. The phosphor materials are excited by radiations emitted by LED devices (e.g., LED device 101). As an example, the LED devices are each nominally monochromatic and emit in a similar wavelength range. -
FIG. 1B is a simplified diagram illustrating construction of a radiation source comprised of light emitting diodes. As shown, theradiation source 120 constructed on asubmount 111 upon which submount is a layer of sapphire orother insulator 112, upon which, further, are disposed one or more conductive contacts (e.g., conductive contact 114 1, conductive contact 114 2), arranged in an array where each conductive contact is spatially separated from any other conductive contact by anisolation gap 116.FIG. 1B shows two conductive contacts in a linear array, however other arrays are possible, and are described herein. Atop the conductive contacts are LED devices (e.g., LED device 115 1, LED device 115 2, LED device 115 N, etc.). The LED device is but one possibility for a radiation source, and other radiation sources are possible and envisioned, for example a radiation source can be a laser device. - In a specific embodiment, the devices and packages disclosed herein include at least one non-polar or at least one semi-polar radiation source (e.g. an LED or laser) disposed on a submount. The starting materials can comprise polar gallium nitride containing materials.
- The
radiation source 120 is not to be construed as conforming to a specific drawing scale, and in particular, many structural details are not included inFIG. 1B so as not to obscure understanding of the embodiments. In particular, the dimensions of the isolation gap ofFIG. 1B serves to separate the conductive contacts (e.g., conductive contact 114 1, conductive contact 114 2) one from another, and in some embodiments, the isolation is relatively wider, or deeper, or shorter or shallower. The isolation gap serves to facilitate shaping of materials formed in and around the isolation gap, which formation can be by one or more additive processes, or by one or more subtractive processes, or both. The aforementioned shaped materials serve as an isolation barrier. Further details are presented infra. - It is to be appreciated that the radiation sources illustrated in
FIG. 1B can output light in a variety of wavelengths (e.g., colors) according to various embodiments of the present disclosure. Depending on the application, color balance can be achieved by modifying color generated by LED devices using a wavelength-modifying material (e.g., a phosphor material). In one embodiment, the phosphor material may be mixed with encapsulating material (e.g., silicone material) that distributes phosphor color pixels within a thin layer atop the array of LED devices. Other embodiments for providing color pixels can be conveniently constructed using a cover member (seeFIG. 1C ) that comprises deposits of one or more wavelength-modifying materials. -
FIG. 1C is a simplified diagram illustrating anoptical device 150 embodied as alight source 142 constructed using an array of LEDs juxtaposed with acover member 140, the cover member having a mixture of wavelength converting materials distributed within the volume of the cover member, according to some embodiments. The wavelength converting materials can be distributed in a variety of configurations. For example, thelight source 142 can include blue color emitting material at its corners, green color emitting material at its edges, and red color emitting material at its center. Individually, and together, these color pixels modify the color of light emitted by the LED devices. For example, the color pixels are used to modify the light from LED devices to appear as white light having a uniform broadband emission (e.g., characterized by a substantially flat emission of light throughout the range of about 380 nm to about 780 nm), which is suitable for general lighting. In one embodiment, “blank” pixels are used for later color tuning and the color of the light from LED devices is measured. - In various embodiments, color balance adjustment is accomplished by using pure color pixels, mixing phosphor material, and/or using a uniform layer of phosphor over LED devices. In one embodiment, color balance tuning is achieved by providing a color pattern on a
cover member 140. Or, the cover member can be is made of glass material and function as a 405 nm reflection dichroic lens. Hermetic sealing techniques may be used to encapsulate the cover member within theoptical device 150. A color tuning using cover member can also be achieved through light absorption and/or light reflection. - In one embodiment, a predeposited phosphor plate is attached to the cover member based on a predetermined pattern. For example, after positioning wavelength-modifying material in the vicinity of the light emitting devices, the color of the aggregate emitted light by the
optical device 150 is measured. Based on the measured color, the positioning of the wavelength-modifying material is determined and used to balance the color of the aggregate emitted light. Various wavelength converting processes are discussed infra. - In an alternative embodiment, wavelength converting processes are facilitated by using one or more pixilated phosphor plates that are attached to the cover member. For example, the pixilated phosphor plates include color and, depending on the application, color patterns of the phosphor plate may be predetermined based on the measured color balance of the aggregate emitted light. In an alternative embodiment, the absorption plate, which is attached to the cover member, is used to perform color correction. In some situations, the absorption plate comprises color absorption material. For example, the absorbing and/or reflective material can be plastic, ink, die, glue, epoxy, and others.
- In other embodiments, the phosphor particles are embedded in a reflective matrix (e.g., the matrix formed by conductive contacts). Such phosphor particles can be disposed on the substrate by deposition. In one specific embodiment, the reflective matrix comprises silver or other suitable material. Alternatively, one or more colored pixilated reflector plates (not shown) are attached to the cover member to adjust color balance of the LED devices. In some situations, materials such as aluminum, gold, platinum, chromium, and/or others are deposited on the pixilated reflector plates to provide color balance.
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FIG. 1D is a simplified diagram illustrating anLED lamp 160 having a base to provide a mount point for a light source, according to some embodiments. It is to be appreciated that anLED lamp 160, according to the present disclosure, can be implemented for various types of applications. As shown inFIG. 1D , a light source (e.g., the light source 142) is a part of theLED lamp 160. TheLED lamp 160 includes abase member 151. Thebase member 151 is mechanically connected to aheat sink 152. In one embodiment, thebase member 151 is compatible with conventional light bulb socket and is used to provide electrical power (e.g., using an AC power source) to the one or more radiation emitting devices (e.g., one or more instances of light source 142). -
FIG. 2 is a simplified diagram illustrating a chip-array-basedapparatus 200 having green and red wavelength converting material. Compared to the device shown inFIG. 1A , only two layers of wavelength converting materials are used. This example shows a transparent (non-converting layer) as well as a layer of greenwavelength converting materials 202 and a layer of redwavelength converting materials 204. The LED devices (e.g., LED device 201) comprising the array are blue-emitting. The combination of blue LED light emission and the green and red wavelength converting materials emission results in white light. -
FIG. 3A is a simplified diagram illustrating aconversion process 300. As shown, aradiation source 301 is configured to emit radiation at violet, near ultraviolet, or UV wavelengths. The radiation emitted byradiation source 301 is absorbed by the phosphor materials (e.g., theblue phosphor material 302, thegreen phosphor material 303, and the red phosphor material 304). Upon absorbing the radiation, theblue phosphor material 302 emits blue light, thegreen phosphor material 303 emits green light, and thered phosphor material 304 emits red light. As shown, a portion (e.g., portion 310 1, portion 310 2) of the emissions from the blue phosphor are incident on the surrounding phosphors, and are absorbed by the green phosphor material and red phosphor material, which emits green and red light, respectively. This particular process of converted blue light being further absorbed and converted (e.g., in a cascade of emission and absorption) is considered a lossy process, and in some cases can be undesirable. -
FIG. 3B is a simplified diagram illustrating aconversion process 350. As shown, aradiation source 351 is configured to emit radiation at a wavelength that is substantially in the blue spectrum. The radiation emitted byradiation source 351 is reflected by blue light emittingwavelength converting material 352 and absorbed by the green light emitting wavelength converting material 353 and red light emittingwavelength converting material 354. Upon absorbing the radiation, green light emitting wavelength converting material 353 emits green light, and the red light emittingwavelength converting material 354 emits red light. A portion of the converted blue light is absorbed by the green light emitting wavelength converting material and red light emitting wavelength converting material, which emits green and red light, respectively. This particular process of converted blue light being further absorbed and converted is considered a lossy process, and in some cases can be undesirable. -
FIG. 4 is a graph illustrating alight process chart 400 by phosphor material. As shown inFIG. 4 , radiation with a wavelength of violet, near violet, or ultraviolet from a radiation source is absorbed by the blue phosphor material, which in turn emits blue light. However, since the blue color light can also be absorbed by red and green phosphor, a portion of the blue light is converted to green or red light. As shown inFIG. 4 , each phosphor is most effective at converting radiation at its particular range of wavelength. And, as shown, some of these ranges overlap. In particular, the wavelength range from about 380 nm to about 430 nm (shown as wavelength range 411) exhibits absorption by all three phosphors (e.g., blue, green, and red). However, the wavelength range from about 430 nm to about 500 nm (shown as wavelength range 419) exhibits absorption by substantially only two phosphors (e.g., green, and red). Thus, the effect of the lossy conversion processes (e.g.,conversion process 300 and conversion process 350) in absorbing blue light from the radiation sources, and re-absorbing blue-emitted light from the wavelength converting materials, is reduced. - Yet, it remains a challenge with UV- or V-pumped embodiments (e.g., pcLEDs) where there remains a requirement for a short pump wavelength to excite a blue phosphor while reducing the lossy effects as heretofore described. Among other challenges, the short wavelength light is susceptible to optical loss in materials typically employed in the fabrication of LEDs including GaN semiconductor material, packaging material, contacts and metallization (especially Ag) material, and encapsulation material (e.g., silicone or epoxy). Furthermore, short wavelength LEDs that pump a blue phosphor may generate blue photons which subsequently pump lower-energy phosphors (e.g., green and red), as illustrated in
FIG. 4 . This cascading event is lossy, according to the quantum efficiency of the blue phosphor, thereby reducing color conversion efficiency. It is thus desirable to maintain the benefits of UV- and/or V-based LEDs while maintaining high conversion efficiency. - It is to be appreciated that embodiments of the present disclosure maintain the benefits of UV- and/or V-pumped pcLEDs while improving conversion efficiency. In one embodiment, an array of LED chips is provided, and is comprised of two groups. One group of LEDs has a shorter wavelength to enable pumping of a blue phosphor material. The second group of LEDs has a longer wavelength which may, or may not, excite a blue phosphor material, but will excite a green or longer wavelength (e.g., red) phosphor material. For example, the first group of LEDs might have an average emission wavelength of less than 405 nm, while the second group may have an average emission wavelength greater than 405 nm. The combined effect of the two groups of LEDs in the array is to provide light of desired characteristics such as color (e.g., white) and color rendering. Furthermore, the conversion efficiency achieved in the preferred embodiment will be higher than that of the conventional approach. In particular, the cascading loss of blue photons pumping longer-wavelength phosphors may be reduced by localizing blue phosphor to regions near the short-wavelength LEDs. In addition, the longer-wavelength pump LEDs will contribute to overall higher efficacy by being less susceptible to optical loss mechanisms in GaN, metallization, and packaging materials, as described above.
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FIG. 5 is a simplified diagram illustrating an optical device, according to an embodiment of the present disclosure. As shown inFIG. 5 , anoptical device 500 includes a submount 111 (not shown) that has a surface. A number of radiation sources are provided on the submount. According to various embodiments, two types of radiation sources are provided, and each type of radiation source is associated with a range of wavelength. For example, radiation sources include a first plurality of radiation sources that are configure to emit radiation characterized by a first wavelength. More specifically, the first wavelength can have a range of between about 380 nm to 470 nm. In a specific embodiment, the first wavelength is characterized by a peak emission of about 420 nm to 470 nm. The first plurality of radiation sources is positioned on the surface, and the first plurality of radiation sources comprising n number of radiation sources. For example, the first plurality of radiation sources includes “long”violet LED devices - The radiation sources also include a second plurality of radiation sources that are configured to emit radiation characterized by a second wavelength. In exemplary embodiments, the second wavelength is shorter than the first wavelength. More specifically, the second wavelength is violet or ultraviolet. In a specific embodiment, the second plurality of radiation sources is characterized by a peak emission in the range of about 380 nm to about 430 nm. In a certain embodiment, the second wavelength is less than 390 nm. The second plurality of radiation sources is positioned on the surface of the submount. The second plurality of radiation sources includes m number of radiation sources. The ratio between the number m and the number n is predetermined based on a selected wavelength. Typically, for warm color temperatures, n is greater than m. The ratio of n to m can be 1:1, 2:1, 10:1, and other ratios. For example, the ratio can be based on a selected wavelength output for the
optical device 500. As an example, the second plurality of radiation sources comprisesLED devices - Depending on the application, the arrangement of a first plurality and a second plurality of radiation sources can be based on various criteria. For example, particular patterns can be used to maximize the efficiency of the
optical device 500. - The
optical device 500 includes three wavelength converting layers overlaying the radiation sources: a firstwavelength converting layer 503, a secondwavelength converting layer 502, and a thirdwavelength converting layer 504. The firstwavelength converting layer 503 is configured to absorb at least a portion of radiation emitted by both the first plurality of radiation sources and the second plurality of radiation sources. More specifically, the first wavelength converting layer is associated with a wavelength emission ranging from 590 nm to 650 nm. For example, the first wavelength converting layer comprises red phosphor material that is adapted to emit substantially red color light. - The second
wavelength converting layer 502 is configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources. The second wavelength converting layer is associated with a wavelength emission ranging from 490 nm to 590 nm. For example, the second wavelength converting layer comprises a green phosphor that is adapted to emit substantially green light. - The third
wavelength converting layer 504 is configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources. The third wavelength converting layer is associated with a wavelength emission ranging from 440 nm to 490 nm. For example, the third wavelength converting layer comprises a blue phosphor material that is adapted to emit substantially blue light. - Depending on the application, the
optical device 500 may include other components as well. In certain embodiments, theoptical device 500 includes a power source that is capable of selectively powering the radiation sources or LED devices. In a specific embodiment, the power source is configured to turn radiation sources on and off based on the desired color output. For example, by selectively turning off the radiation source of a specific wavelength, the color output of the optical device is changed. More particularly, a driving circuit can be configured to selectively power the first plurality of radiation devices while maintaining a constant power to the second plurality of radiation sources. Or, the driving circuit can be configured to tune to a ratio of energy being delivered to the first plurality of radiation sources as compared to energy delivered to the second plurality of radiation sources. - In certain embodiments, the power source is configured to turn off certain radiation sources for dimming purposes. The
optical device 500 can also include other components such as a housing member, sealing material, transparent cover, encapsulating material, and others. And, in certain embodiments, patterned phosphor materials are used. -
FIG. 6 is a simplified diagram illustrating anoptical device 600, according to an embodiment of the present disclosure. As shown inFIG. 6 , anoptical device 600 includes a submount 111 (not shown) that has a surface. A number of radiation sources are provided on the submount. According to various embodiments, two types of radiation sources are provided, and each type of radiation source is associated with a range of wavelength. For example, radiation sources include a first plurality of radiation sources that are configured to emit radiation characterized by a first wavelength. More specifically, the first wavelength can have a range of between about 380 nm to 470 nm. In a specific embodiment, the first wavelength is characterized by a peak emission at about 420 nm to 470 nm. The first plurality of radiation sources are positioned on the surface. The first plurality of radiation sources have an n number of radiation sources. For example, the first plurality of radiation sources includesLED devices - The radiation sources of
optical device 600 also include a second plurality of radiation sources that are configured to emit radiation characterized by a second wavelength. In various embodiments, the second wavelength is shorter than the first wavelength. More specifically, the second wavelength is violet or ultraviolet. In a specific embodiment, the second plurality of radiation sources are characterized by a peak emission in the range of about 380 nm to about 430 nm. In certain embodiments, the second wavelength is less than 390 nm. The second plurality of radiation sources is positioned on the surface of the submount. The second plurality of radiation sources comprises m number of radiation sources. The ratio between m and n is predetermined based on a selected wavelength. Typically, n is greater than m. The ratio of n to m can be 1:1, 2:1, 10:1, and other ratios. For example, the ratio is based on a selected wavelength output for theoptical device 500. As an example, the second plurality of radiation sources comprises shortviolet LED devices 603 and 606. - In various embodiments, the arrangement of the radiation sources is patterned. More specifically, the locations of the second plurality of radiation sources are predetermined and are covered and/or surrounded by a specific phosphor pattern (e.g.,
phosphor pattern 607 1, phosphor pattern 607 1). The phosphor pattern is configured to be proximal to instances from among the second plurality of radiation sources. More specifically, the phosphor pattern is more remote from the first plurality of radiation sources. The phosphor pattern is configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources. In various embodiments, the phosphor pattern is associated with a wavelength emission ranging from about 440 nm to about 490 nm. In a specific embodiment, the phosphor pattern comprises blue phosphor material. For example, the patterned blue phosphor material is used to convert violet or ultraviolet radiation to blue light. Among other things, the blue light converted by the patterned phosphor material can help create desired color balance and improve efficiency. - As shown, the
optical device 600 also includes a firstwavelength converting layer 601 configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources. The first wavelength converting layer is associated with a wavelength emission ranging from 590 nm to 650 nm. For example, the first wavelength converting layer comprises red phosphor material that is adapted to emit substantially red color light. - The second
wavelength converting layers - As an example, the first and second wavelength converting layer can absorb radiation from both the first plurality and second plurality of radiation sources. Additionally, the first and second wavelength converting layers may also absorb emission from the phosphor pattern. It is to be appreciated that the embodiments of the present disclosure can provide efficiency gains over conventional techniques.
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FIG. 7 is asimplified graph 700 illustrating performance of various embodiments of the optical devices described herein. - It is to be appreciated that the improvement in efficiency can be dramatic. The data shown in
FIG. 7 indicates a +20% gain in conversion efficiency by pumping a tri-color phosphor mix with 405 nm radiating LEDs vs. 395 nm LEDs. In this comparison, the blue phosphor material is likely to be equally excited by both 395 nm and 405 nm LEDs, meaning the cascading loss of blue photons pumping green and/or red phosphors is still present. So, even higher gains are expected in cases for which a second group of LEDs is of a sufficiently long wavelength to not substantially pump the blue phosphor material. -
FIG. 8 is a simplified diagram illustrating anoptical device 800 having violet and blue LEDs according to an embodiment of the present disclosure. As shown inFIG. 8 , violet LEDs and blue LEDs are arranged according to a predetermined pattern. In this configuration, green emitting and red emitting wavelength converting materials are used to convert radiation emitted by violet and blue LEDs. For example, the blue LEDs as shown are configured to provide blue color light, and as a result blue phosphor material is not needed for the optical system to produce white light. - One exemplary embodiment in accordance with the depiction of
FIG. 8 comprises anoptical device 800 comprising a submount having a surface, upon which surface is disposed a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength having a range of about 440 nm to about 500 nm (e.g., radiating blue light), the first plurality of radiation sources being positioned on the surface, and the first plurality of radiation sources having n number of radiation sources. A second plurality of radiation sources configured to emit radiation is characterized by a second wavelength, the second wavelength being shorter than the first wavelength (e.g., radiating violet light), the second plurality of radiation source being positioned on the surface, and the second plurality of radiation sources having m number of radiation sources, where a ratio between m and n is predetermined based on a selected wavelength. Further, this embodiment comprises two layers of wavelength converting material, namely a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 590 nm to about 650 nm (e.g., red emissions), and a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm (e.g., green emissions). -
FIG. 9 is a simplified diagram illustrating anoptical device 900 having violet and patterned blue LEDs according to an embodiment of the present disclosure. As shown inFIG. 9 , violet LEDs and blue LEDs are arranged according to a predetermined pattern. For example, violet LEDs are characterized by a wavelength emission ranging from about 380 nm to about 430 nm, and the blue LEDs are characterized by a wavelength of about 420 nm to 490 nm. In this configuration,green phosphor materials 902 andred phosphor materials 901 are used to convert radiation emitted by violet and blue LEDs. Moreover, the blue LEDs as shown are configured to provide blue color light, and as a result blue phosphor material is not needed for the optical system to produce white light. For example, the blue LEDs are provided at predetermined locations (e.g., predetermined location 910 1, predetermined location 910 2, and predetermined location 910 3) that are substantially remote from green and red phosphor material, which allows the blue LEDs to efficiently emit blue colored light that contributes to white light output. In some embodiments, the blue LEDs are provided at predetermined locations that are substantially surrounded by isolation barriers (e.g., isolation barrier 911 1, isolation barrier 911 2) such that the blue LEDs emit blue colored light that does not substantially interact with the green- and red-emitting wavelength converting materials. -
FIG. 10 is a simplified diagram illustrating anoptical device 1000 having violet and red LEDs according to an embodiment of the present disclosure. As shown inFIG. 10 , violet LEDs and red LEDs are arranged according to a predetermined pattern. For example, violet LEDs are characterized by a wavelength emission ranging from about 380 nm to about 430 nm, and the red LEDs are characterized by a wavelength of about 590 nm to 650 nm. In this configuration, green and blue phosphor materials are used to convert radiation emitted by violet and red LEDs. For example, the red LEDs as shown are configured to provide red color light, and as a result red phosphor material is not needed for the optical system to produce white light. For example, red light combines with blue and green light from blue and green phosphor material to form white light. -
FIG. 11 is a simplified diagram illustrating anoptical device 1100 having violet and red LEDs according to an embodiment of the present disclosure. As shown inFIG. 11 , violet LEDs and red LEDs are arranged according to a predetermined pattern. For example, violet LEDs are characterized by a wavelength emission ranging from 380 nm to 430 nm, and the red LEDs are characterized by a wavelength of about 590 nm to 650 nm. In this configuration, green and blue phosphor materials are used to convert radiation emitted by violet and red LEDs. For example, the red LEDs as shown are configured to provide red color light, and as a result red phosphor material is not needed for the optical system to produce white light. In this example, red light combines with blue and green light from blue and green phosphor material to form white light. - In yet another embodiment, violet LEDs and red LEDs are arranged according to a predetermined pattern. For example, violet LEDs are characterized by a wavelength emission ranging from 380 nm to 430 nm, and the red LEDs are characterized by a wavelength of about 590 nm to 650 nm. In this configuration, green and blue wavelength-emitting materials are used to convert radiation emitted by violet LEDs. For example, the red LEDs as shown are configured to provide red color light, and as a result red wavelength-emitting material is not needed for the optical system to produce white light. For example, red light combines with blue and green light from blue and green wavelength-emitting material to form white light.
-
FIG. 12A is a simplified diagram 1200 illustrating an optical device having red, green, and blue radiation sources disposed within recesses. In embodiments wherein portions of the final white light spectrum are contributed by direct emission from radiation sources, it is desirable to avoid interaction of such direct emission with any wavelength converting materials (e.g., down-conversion materials, phosphors). For example, for blue-emitting radiation sources whose spectra are being combined with other radiation sources that are pumping to longer wavelength down-conversion media (e.g., to make broader spectrum light), the down-conversion media can be isolated from the optical path of the blue-emitting LEDs. And, providing such an isolation (e.g., using an isolation barrier) increases efficiency as there are losses (e.g., backscattered light into LED chip) associated with down-conversion. Instead, it is preferable to provide optical means (e.g., an isolation barrier) to reflect light from the radiation sources towards the desired optical far-field such that this reflected light does not substantially interact with down-conversion media. - One such an embodiment is shown in
FIG. 12A . As shown, LEDs are placed into recessed regions in a submount (e.g., substrate or package) such that they are optically isolated from one another. Further, light from direct-emitting LEDs does not interact with down-conversion media and instead, is substantially directed into the desired emission pattern of the entire LED package. Conversely, light from the down-converted LEDs (e.g., down-converting LED 1204 1, down-converting LED 1204 2) is converted locally and directed to the final emission pattern. In addition to providing efficient light collection from the direct-emitting LEDs, this design avoids cascading down-conversion events (e.g., violet down-converted to green, and green down-converted to red) which can unnecessarily reduce overall efficiency since quantum yields of down-conversion media are less than 100%. - Light from the individual LEDs are combined together in the far field to provide a uniform broadband emission which is a combination of light from the direct-emitting and down-converting LED chips.
-
FIG. 12B is a simplified diagram illustrating an optical device having red, green, and blue LEDs disposed between barriers. In the embodiment ofFIG. 12B , the same benefits pertaining to disposition of radiation sources in proximity to isolation barriers are provided by fabrication of the isolation barriers using an additive, rather than subtractive process. In an additive processes, the barrier is formed by techniques such as overmolding, deposition/lithography/removal, attachment of a barrier mesh, etc. In subtractive processes, the recesses are formed by techniques such as deposition/lithography/removal and other techniques well known in the art. - The radiation sources can be implemented using various types of devices, such as light emitting diode devices or laser diode devices. In certain embodiments, the LED devices are fabricated from gallium and nitrogen submounts, such as GaN submount. As used herein, the term GaN submount is associated with Group III-nitride based materials including GaN, InGaN, AlGaN, or other Group III containing alloys or compositions that are used as starting materials. Such starting materials include polar GaN submounts (e.g.,
submount 111 where the largest area surface is nominally an (h k l) plane wherein h=k=0, and l is non-zero), non-polar GaN submounts (e.g., submount material where the largest area surface is oriented at an angle ranging from about 80-100 degrees from the polar orientation described above towards an (h k l) plane wherein l=0, and at least one of h and k is non-zero), or semi-polar GaN submounts (e.g., submount material where the largest area surface is oriented at an angle ranging from about +0.1 to 80 degrees or 110-179.9 degrees from the polar orientation described above towards an (h k l) plane wherein l=0, and at least one of h and k is non-zero). - Wavelength conversion materials can be crystalline (single or poly), ceramic or semiconductor particle phosphors, ceramic or semiconductor plate phosphors, organic or inorganic downconverters, upconverters (anti-stokes), nano-particles and other materials which provide wavelength conversion. Major classes of downconverter phosphors used in solid-state lighting include garnets doped at least with Ce3+; nitridosilicates, oxynitridosilicates or oxynitridoaluminosilicates doped at least with Ce3+; chalcogenides doped at least with Ce3+; silicates or fluorosilicates doped at least with Eu2+; nitridosilicates, oxynitridosilicates, oxynitridoaluminosilicates or sialons doped at least with Eu2+; carbidonitridosilicates or carbidooxynitridosilicates doped at least with Eu2+; aluminates doped at least with Eu2+; phosphates or apatites doped at least with Eu2+; chalcogenides doped at least with Eu2+; and oxides, oxyfluorides or complex fluorides doped at least with Mn4+. Some specific examples are listed below:
-
(Ba,Sr,Ca,Mg)5(PO4)3(Cl,F,Br,OH):Eu2+, Mn2+ -
(Ca,Sr,Ba)3MgSi2O8:Eu2+, Mn2+ -
(Ba,Sr,Ca)MgAl10O17:Eu2+, Mn2+ -
(Na,K,Rb,Cs)2[(Si,Ge,Ti,Zr,Hf,Sn)F6]:Mn4+ -
(Mg,Ca,Zr,Ba,Zn)[(Si,Ge,Ti,Zr,Hf,Sn)F6]:Mn4+ -
(Mg,Ca,Sr,Ba,Zn)2SiO4:Eu2+ -
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+ -
(Ca,Sr)S:Eu2+,Ce3+ -
(Y,Gd,Tb,La,Sm,Pr,Lu)3(Sc,Al,Ga)5O12:Ce3+ - a group:
-
Ca1−xAlx−xySi1−x+xyN2−x−xyCxy:A (1); -
Ca1−x−zNazM(III)x−xy−zSi1−x+xy+zN2−x−xyCxy:A (2); -
M(II)1−x−zM(I)zM(III)x−xy−zSi1−x+xy+zN2−x−xyCxy:A (3); -
M(II)1−x−zM(I)zM(III)x−xy−zSi1−x+xy+zN2−x−xy−2w/3CxyOw−v/2Hv:A (4); and -
M(II)1−x−zM(I)zM(III)x−xy−zSi1−x+xy+zN2−x−xy−2w/3−v/3CxyOwHv:A (4a), - wherein 0<x<1, 0<y<1, 0≦z<1, 0≦v<1, 0<w<1, x+z<1, x>xy+z, and 0<x−xy−z<1, M(II) is at least one divalent cation, M(I) is at least one monovalent cation, M(III) is at least one trivalent cation, H is at least one monovalent anion, and A is a luminescence activator doped in the crystal structure.
-
Cex(Mg,Ca,Sr,Ba)y(Sc,Y,La,Gd,Lu)1−x−yAl(Si6−z+yAlz−y)(N10−zOz) (where x,y<1, y≧0 and z˜1) -
(Mg,Ca,Sr,Ba)(Y,Sc,Gd,Tb,La,Lu)2S4:Ce3+ -
(Ba,Sr,Ca)xxSiyNz:Eu2+ (where 2x+4y=3z) -
(Y,Sc,Lu,Gd)2−nCanSi4N6+nC1−n:Ce3+, (wherein 0≦n≦0.5) -
(Lu,Ca,Li,Mg,Y) alpha-SiAlON doped with Eu2+ and/or Ce3+ -
(Ca,Sr,Ba)SiO2N2:Eu2+,Ce3+ -
(Sr,Ca)AlSiN3:Eu2+ -
CaAlSi(ON)3:Eu2+ -
(Y,La,Lu)Si3N5:Ce3+ -
(La,Y,Lu)3Si6N11:Ce3+ - For purposes of the application, it is understood that when a phosphor has two or more dopant ions (i.e. those ions following the colon in the above phosphors), this is to mean that the phosphor has at least one (but not necessarily all) of those dopant ions within the material. That is, as understood by those skilled in the art, this type of notation means that the phosphor can include any or all of those specified ions as dopants in the formulation. Further, it is to be understood that nanoparticles, quantum dots, semiconductor particles, and other types of materials can be used as wavelength converting materials. The list above is representative and should not be taken to include all the materials that may be utilized within embodiments described herein. A wavelength converting material may include one or more of any of the listed phosphors.
-
FIG. 13 is an exploded view of an LED lamp, according to some embodiments. The exploded view illustrates anLED lamp 1300 with an MR-16 type design. As shown, afinned heat sink 1302 is provided and one or more optical devices 150 (e.g., light source 142) can be positioned on the surface. Also shown in the exploded view is acover member 140, the cover member having a mixture of wavelength converting materials distributed within the volume of the cover member. AnLED lamp 1300 can comprise aninsertable reflector 1304, and aprotective lens 1301. - For embodiments powered by an external power source (e.g., a power source from outside the lamp), a
housing 1306 is provided. As shown, thehousing 1306 is configured to provide an electrical connection to an external power source. Further, such a housing comprises an interior void, suitable for containing electrical components (e.g., a driver), possibly disposed on a printed circuit board. -
FIG. 14 is an illustration of anLED system 1400 comprising anLED lamp 1410, according to some embodiments. TheLED system 1400 is powered by anAC power source 1402, to provide power to a rectifier module 1416 (e.g., a bridge rectifier) which in turn is configured to provide a rectified output to an array of radiation emitting devices (e.g., a first array of radiation emitting devices, a second array of radiation emitting devices) comprising alight source 142. Acurrent monitor module 1405 is electrically coupled to the first array and second array of radiation emitting devices such that the current monitor module can determine a first current level associated with the first array of radiation emitting devices and a second current level associated with the second array of radiation emitting devices; and asignal compensating module 1414 electrically coupled to thecurrent monitor module 1405, the signal compensating module being configured to generate a first compensation factor signal based on a difference between the first current level and a first reference current level. As shown, therectifier module 1416 and the signal compensating module (and other components) are mounted to a printedcircuit board 1403. Further, and as shown, the printedcircuit board 1403 is electrically connected to apower pin 1415 mounted within abase member 151, and the base is mechanically coupled to aheat sink 152. The heat sink and base provide mechanical stability for aninsertable reflector 1304. -
FIG. 15 depicts a block diagram of a system to perform certain functions to fabricate an optical device. As shown,FIG. 15 implements fabrication of an optical device, comprising one or more steps for: preparing a submount having a surface (see module 1510); disposing a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength having a range of about 440 nm to about 500 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources (see module 1520); disposing a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, where a ratio between m and n being predetermined based on a selected wavelength (see module 1530); providing a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 590 nm to about 650 nm (see module 1540); providing a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm (see module 1550). - In certain embodiments, an optical device comprises: a submount having a surface; a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength having a range of about 380 nm to about 470 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources; a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 590 nm to about 650 nm; a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 650 nm; and a third wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the third wavelength converting layer having a wavelength emission ranging from about 440 nm to about 490 nm.
- In certain embodiments of an optical device the first plurality of radiation source is characterized by a peak emission of about 420 nm to about 470 nm.
- In certain embodiments of an optical device the second plurality of radiation source is characterized by a peak emission of about 380 nm to about 430 nm.
- In certain embodiments, an optical device further comprises encapsulating material overlaying the first plurality of radiation sources, the encapsulating material comprising silicone and/or epoxy material.
- In certain embodiments of an optical device the first plurality of radiation sources comprises a light emitting diode (LED).
- In certain embodiments of an optical device the ratio of the number n to the number m (n:m) is greater than the ratio 1:2.
- In certain embodiments of an optical device the total emission color characteristic of the optical device is substantially white color.
- In certain embodiments of an optical device the ratio of the number n to the number m (n:m) is about 1:1.
- In certain embodiments, an optical device further comprises a driving circuit configured to selectively power the first plurality of radiation.
- In certain embodiments, an optical device further comprises driving circuit configured to tune to a ratio of energy being delivered to the first plurality of radiation sources and energy delivered to the second plurality of radiation sources.
- In certain embodiments of an optical device the first plurality of radiation sources and the second plurality of radiation sources are arranged according to a predetermined pattern.
- In certain embodiments of an optical device, the optical device comprises: a submount having a surface; a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength having a range of about 380 nm to about 470 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources; a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, the second plurality of radiation source being positioned on the surface and arranged according to a predetermined pattern, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 590 nm to about 650 nm; a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the first plurality of radiation sources and the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm; and a phosphor pattern overlaying the second plurality of radiation sources, the phosphor pattern being configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the phosphor pattern being arranged according to the predetermined pattern, the phosphor pattern having a wavelength emission ranging from about 440 nm to about 490 nm.
- In certain embodiments of an optical device the second plurality of radiation sources comprises LED devices.
- In certain embodiments of an optical device the second wavelength is less than 420 nm.
- In certain embodiments of an optical device the first wavelength converting layer is emits a red color.
- In certain embodiments, an optical device further comprises a housing.
- In certain embodiments of an optical device the first plurality of radiation sources are fabricated from gallium and nitrogen containing material.
- In certain embodiments of an optical device the first plurality of radiation sources are fabricated from a bulk submount.
- In certain embodiments of an optical device the ratio of the number n to the number m (n:m) is about 1:1.
- In certain embodiments, an optical device further comprises driving circuit configured to tune to a ratio of energy being delivered to the first plurality of radiation sources and energy delivered to the second plurality of radiation sources.
- In certain embodiments of an optical device the first plurality of radiation sources and the second plurality of radiation sources are arranged according to a predetermined pattern.
- In certain embodiments of an optical device, the optical device comprises: a submount having a surface; a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength having a range of about 440 nm to about 500 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources; a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 590 nm to about 650 nm; and a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm.
- In certain embodiments of an optical device the first plurality of radiation source is characterized by a peak emission of about 480 nm to about 500 nm.
- In certain embodiments of an optical device the second plurality of radiation source is characterized by a peak emission of about 380 nm to about 420 nm.
- In certain embodiments of an optical device the first plurality of radiation sources comprises a light emitting diode (LED).
- In certain embodiments of an optical device the ratio of the number n to the number m (n:m) is greater than the ratio 22:2.
- In certain embodiments of an optical device the ratio of the number n to the number m (n:m) is about 10:1.
- In certain embodiments of an optical device, the optical device comprises driving circuit configured to tune to a ratio of energy being delivered to the first plurality of radiation sources and energy delivered to the second plurality of radiation sources.
- In certain embodiments of an optical device the first plurality of radiation sources and the second plurality of radiation sources are arranged according to a predetermined pattern.
- In certain embodiments of an optical device, the optical device comprises: a submount having a surface; a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength being greater than 590 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources; a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than 440 nm, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 440 nm to about 500 nm; and a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm.
- In certain embodiments of an optical device, the optical device comprises: a submount having a surface; a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength being greater than 590 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources; a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength of about 440 nm to about 500 nm, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; and a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm.
- In certain embodiments of an optical device, the optical device comprises: a submount having a surface; a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength being greater than 590 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources; a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength of about 440 nm to about 500 nm, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; and a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm.
- In certain embodiments, a lamp comprises: a base, the base having at least one structural member to provide a mount point; and an optical device, disposed on the mount point, the optical device comprising: a first plurality of radiation sources configured to emit radiation characterized by a first wavelength, the first wavelength having a range of about 440 nm to about 500 nm, the first plurality of radiation sources being positioned on the surface, the first plurality of radiation sources having n number of radiation sources a second plurality of radiation sources configured to emit radiation characterized by a second wavelength, the second wavelength being shorter than the first wavelength, the second plurality of radiation source being positioned on the surface, the second plurality of radiation sources having m number of radiation sources, a ratio between m and n being predetermined based on a selected wavelength; a first wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the first wavelength converting layer having a wavelength emission ranging from about 590 nm to about 650 nm; and a second wavelength converting layer configured to absorb at least a portion of radiation emitted by the second plurality of radiation sources, the second wavelength converting layer having a wavelength emission ranging from about 490 nm to about 590 nm.
- In one or more preferred embodiments, various pattern and/or arrangement for different radiation sources can be used. The above description and illustrations should not be taken as limiting the scope of the present disclosure, which is defined by the appended claims.
Claims (30)
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190219234A1 (en) * | 2016-09-12 | 2019-07-18 | Lumileds Llc | Lighting system having reduced melanopic spectral content |
WO2022005920A1 (en) * | 2020-07-02 | 2022-01-06 | Optonomous Technologies, Inc. | INTEGRATED LiDAR WITH SCANNING PHOSPHOR ILLUMINATION SYSTEM AND METHOD |
US20220174795A1 (en) * | 2010-02-03 | 2022-06-02 | Ecosense Lighting Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293667B2 (en) * | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
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US8905588B2 (en) * | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
US10918747B2 (en) | 2015-07-30 | 2021-02-16 | Vital Vio, Inc. | Disinfecting lighting device |
CA2993825C (en) | 2015-07-30 | 2020-08-25 | Vital Vio, Inc. | Single diode disinfection |
US10357582B1 (en) * | 2015-07-30 | 2019-07-23 | Vital Vio, Inc. | Disinfecting lighting device |
US10632214B2 (en) | 2016-06-24 | 2020-04-28 | Soraa, Inc. | Bactericidal light source with high quality of light |
JP1591130S (en) * | 2016-12-28 | 2017-11-20 | ||
US20180185533A1 (en) | 2016-12-29 | 2018-07-05 | Vital Vio, Inc. | Control systems for disinfecting light systems and methods of regulating operations of disinfecting light systems |
JP6583572B2 (en) * | 2017-01-31 | 2019-10-02 | サンケン電気株式会社 | Light emitting device |
KR102230459B1 (en) * | 2017-09-06 | 2021-03-23 | 지엘비텍 주식회사 | D50, D65 Standard LED Light Emitting Module and Lighting Apparatus with High Color Rendering Index |
DE102017122936A1 (en) * | 2017-10-04 | 2019-04-04 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
US10835627B2 (en) | 2017-12-01 | 2020-11-17 | Vital Vio, Inc. | Devices using flexible light emitting layer for creating disinfecting illuminated surface, and related method |
US10309614B1 (en) | 2017-12-05 | 2019-06-04 | Vital Vivo, Inc. | Light directing element |
US10413626B1 (en) | 2018-03-29 | 2019-09-17 | Vital Vio, Inc. | Multiple light emitter for inactivating microorganisms |
US10619802B2 (en) * | 2018-09-18 | 2020-04-14 | TieJun Wang | Solid state white-light lamp |
US11253721B2 (en) | 2018-12-07 | 2022-02-22 | Seoul Viosys Co., Ltd. | LED lighting apparatus having sterilizing function |
US12194168B2 (en) | 2018-12-19 | 2025-01-14 | Vyv, Inc. | Lighting and dissipation device |
US11639897B2 (en) | 2019-03-29 | 2023-05-02 | Vyv, Inc. | Contamination load sensing device |
US11404610B2 (en) * | 2019-05-22 | 2022-08-02 | Electronic Theatre Controls, Inc. | Light fixture with broadband and narrow band emitters |
US11541135B2 (en) | 2019-06-28 | 2023-01-03 | Vyv, Inc. | Multiple band visible light disinfection |
WO2021030748A1 (en) | 2019-08-15 | 2021-02-18 | Vital Vio, Inc. | Devices configured to disinfect interiors |
US11878084B2 (en) | 2019-09-20 | 2024-01-23 | Vyv, Inc. | Disinfecting light emitting subcomponent |
US11293602B2 (en) | 2020-02-28 | 2022-04-05 | Glbtech Co., Ltd. | High color rendering D50/D65 standard LED illuminant module and lighting apparatus |
Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040207313A1 (en) * | 2003-04-21 | 2004-10-21 | Sharp Kabushiki Kaisha | LED device and portable telephone, digital camera and LCD apparatus using the same |
US20040217364A1 (en) * | 2003-05-01 | 2004-11-04 | Cree Lighting Company, Inc. | Multiple component solid state white light |
US20040227465A1 (en) * | 2003-05-17 | 2004-11-18 | Hisham Menkara | Light emitting device having silicate fluorescent phosphor |
US20050023962A1 (en) * | 2003-08-02 | 2005-02-03 | Hisham Menkara | Light emitting device having sulfoselenide fluorescent phosphor |
US20060072314A1 (en) * | 2004-09-29 | 2006-04-06 | Advanced Optical Technologies, Llc | Optical system using LED coupled with phosphor-doped reflective materials |
US20070223219A1 (en) * | 2005-01-10 | 2007-09-27 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same |
US20070259206A1 (en) * | 2004-04-27 | 2007-11-08 | Matsushita Electric Industrial Co., Ltd. | Phosphor Composition and Method for Producing the Same, and Light-Emitting Device Using the Same |
US20090101930A1 (en) * | 2007-10-17 | 2009-04-23 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
US20090108269A1 (en) * | 2007-10-26 | 2009-04-30 | Led Lighting Fixtures, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
US20090315053A1 (en) * | 2006-08-29 | 2009-12-24 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US20100008079A1 (en) * | 2001-12-31 | 2010-01-14 | R.J. Doran & Co Ltd. | Led inspection lamp and led spotlight |
US20100070064A1 (en) * | 2008-09-11 | 2010-03-18 | Advanced Optoelectronic Technology Inc. | Method and system for configuring high cri led |
US20100200872A1 (en) * | 2009-01-09 | 2010-08-12 | Jun Takashima | Illumination device having multiple led elements with varying color temperatures |
US20100207134A1 (en) * | 2007-07-26 | 2010-08-19 | Kenichiro Tanaka | Led lighting device |
US20110057205A1 (en) * | 2004-11-15 | 2011-03-10 | Koninklijke Philips Electronics N.V. | Led with phosphor tile and overmolded phosphor in lens |
US20110102706A1 (en) * | 2008-08-28 | 2011-05-05 | Panasonic Corporation | Semiconductor light emitting device and backlight source, backlight source system, display device and electronic device using the same |
US20110180829A1 (en) * | 2010-01-26 | 2011-07-28 | Cho Byoung Gu | Light emitting diode (led) and method of manufacture |
US20110248296A1 (en) * | 2006-12-26 | 2011-10-13 | Seoul Semiconductor Co., Ltd. | Light emtting device |
US8106608B2 (en) * | 2009-01-05 | 2012-01-31 | Foxconn Technology Co., Ltd. | Lighting system |
US20120043552A1 (en) * | 2010-08-19 | 2012-02-23 | Soraa, Inc. | System and Method for Selected Pump LEDs with Multiple Phosphors |
US8143789B2 (en) * | 2008-12-27 | 2012-03-27 | Fu Zhun Precision Industry (Shen Zhen) Co., Ltd. | Illumination system |
US20130207148A1 (en) * | 2010-08-20 | 2013-08-15 | Osram Gmbh | Radiation-emitting component with a converter material, with a thermally conductive contact and method for the production thereof |
US8740413B1 (en) * | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20140225137A1 (en) * | 2010-02-03 | 2014-08-14 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20140301062A1 (en) * | 2009-09-18 | 2014-10-09 | Soraa, Inc. | Led lamps with improved quality of light |
US8985794B1 (en) * | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US20160290573A1 (en) * | 2013-10-28 | 2016-10-06 | Ge Lightig Solutions, L.L.C. | Lamps for enhanced optical brightening and color preference |
US9666773B2 (en) * | 2014-02-11 | 2017-05-30 | Samsung Electronics Co., Ltd. | Light source package and display device including the same |
US9761763B2 (en) * | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US10147850B1 (en) * | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20190140146A1 (en) * | 2016-04-29 | 2019-05-09 | Lumileds Llc | High luminance crisp white led light source |
US10632214B2 (en) * | 2016-06-24 | 2020-04-28 | Soraa, Inc. | Bactericidal light source with high quality of light |
US20200178370A1 (en) * | 2018-11-30 | 2020-06-04 | Seoul Semiconductor Co., Ltd. | Lighting apparatus and lighting system including the same |
US20200179712A1 (en) * | 2018-12-07 | 2020-06-11 | Seoul Viosys Co., Ltd. | Led lighting apparatus having sterilizing function |
Family Cites Families (489)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998047170A1 (en) | 1997-04-11 | 1998-10-22 | Nichia Chemical Industries, Ltd. | Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
US3922527A (en) | 1974-12-26 | 1975-11-25 | Nat Forge Co | Temperature control apparatus |
US4341592A (en) | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
US4065688A (en) | 1977-03-28 | 1977-12-27 | Westinghouse Electric Corporation | High-pressure mercury-vapor discharge lamp having a light output with incandescent characteristics |
US4318058A (en) | 1979-04-24 | 1982-03-02 | Nippon Electric Co., Ltd. | Semiconductor diode laser array |
US4350560A (en) | 1981-08-07 | 1982-09-21 | Ferrofluidics Corporation | Apparatus for and method of handling crystals from crystal-growing furnaces |
CA1210132A (en) | 1982-09-16 | 1986-08-19 | Tadao Kubodera | Television receiver |
FR2596070A1 (en) | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | DEVICE COMPRISING A PLANAR SUSCEPTOR ROTATING PARALLEL TO A REFERENCE PLANE AROUND A PERPENDICULAR AXIS AT THIS PLAN |
DE3624934A1 (en) | 1986-07-23 | 1988-01-28 | Dynamit Nobel Ag | AT HIGH TEMPERATURES, CONSTANT CATALYST MOLDED BODIES AND METHOD FOR THE PRODUCTION THEREOF |
US4911102A (en) | 1987-01-31 | 1990-03-27 | Toyoda Gosei Co., Ltd. | Process of vapor growth of gallium nitride and its apparatus |
JPH03287770A (en) | 1990-04-05 | 1991-12-18 | Hitachi Electron Eng Co Ltd | Single wafer processing atmospheric cvd device |
US5334277A (en) | 1990-10-25 | 1994-08-02 | Nichia Kagaky Kogyo K.K. | Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same |
US5169486A (en) | 1991-03-06 | 1992-12-08 | Bestal Corporation | Crystal growth apparatus and process |
JP3148004B2 (en) | 1992-07-06 | 2001-03-19 | 株式会社東芝 | Optical CVD apparatus and method for manufacturing semiconductor device using the same |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5331654A (en) | 1993-03-05 | 1994-07-19 | Photonics Research Incorporated | Polarized surface-emitting laser |
JPH06267846A (en) | 1993-03-10 | 1994-09-22 | Canon Inc | Diamond electronic device and its manufacturing method |
JPH06334215A (en) | 1993-05-18 | 1994-12-02 | Daido Steel Co Ltd | Surface emission led |
PL173917B1 (en) | 1993-08-10 | 1998-05-29 | Ct Badan Wysokocisnieniowych P | Method of obtaining a crystalline lamellar structure |
US5647945A (en) | 1993-08-25 | 1997-07-15 | Tokyo Electron Limited | Vacuum processing apparatus |
US6440823B1 (en) | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
JP3623001B2 (en) | 1994-02-25 | 2005-02-23 | 住友電気工業株式会社 | Method for forming single crystalline thin film |
JP3538275B2 (en) | 1995-02-23 | 2004-06-14 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
US5821555A (en) | 1995-03-27 | 1998-10-13 | Kabushiki Kaisha Toshiba | Semicoductor device having a hetero interface with a lowered barrier |
JPH0982587A (en) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | Preparation of nonsquare electronic chip |
US6072197A (en) | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
JP3360265B2 (en) | 1996-04-26 | 2002-12-24 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
TW393521B (en) | 1996-05-23 | 2000-06-11 | Ebara Corp | Vaporizer apparatus and film deposition apparatus therewith |
US5764674A (en) | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
US6183565B1 (en) | 1997-07-08 | 2001-02-06 | Asm International N.V | Method and apparatus for supporting a semiconductor wafer during processing |
DE19640594B4 (en) | 1996-10-01 | 2016-08-04 | Osram Gmbh | module |
US6542526B1 (en) | 1996-10-30 | 2003-04-01 | Hitachi, Ltd. | Optical information processor and semiconductor light emitting device suitable for the same |
US6104450A (en) | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
US6533874B1 (en) | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6153123A (en) | 1997-02-24 | 2000-11-28 | Superior Micropowders, Llc | Sulfur-containing phosphor powders, methods for making phosphor powders and devices incorporating same |
US6377597B1 (en) | 1997-03-07 | 2002-04-23 | Sharp Kabushiki Kaisha | Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device |
US6069394A (en) | 1997-04-09 | 2000-05-30 | Matsushita Electronics Corporation | Semiconductor substrate, semiconductor device and method of manufacturing the same |
US5813753A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
JPH10335750A (en) | 1997-06-03 | 1998-12-18 | Sony Corp | Semiconductor substrate and semiconductor device |
US6016038A (en) | 1997-08-26 | 2000-01-18 | Color Kinetics, Inc. | Multicolored LED lighting method and apparatus |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
EP1041610B1 (en) | 1997-10-30 | 2010-12-15 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
JP3653169B2 (en) | 1998-01-26 | 2005-05-25 | シャープ株式会社 | Gallium nitride semiconductor laser device |
US6195381B1 (en) | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
JPH11340507A (en) | 1998-05-26 | 1999-12-10 | Matsushita Electron Corp | Semiconductor light-emitting element and its manufacture |
JPH11340576A (en) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor devices |
TW417315B (en) | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
TW413956B (en) | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
DE69942122D1 (en) | 1998-08-18 | 2010-04-22 | Nichia Corp | RED-EMITTING, POST-LIGHTING, PHOTOLUMINESCENT FLUORESCENT AND LIGHTING LAMP USING THIS |
US6108937A (en) | 1998-09-10 | 2000-08-29 | Asm America, Inc. | Method of cooling wafers |
KR100304881B1 (en) | 1998-10-15 | 2001-10-12 | 구자홍 | GaN system compound semiconductor and method for growing crystal thereof |
JP2000138168A (en) | 1998-10-29 | 2000-05-16 | Shin Etsu Handotai Co Ltd | Semiconductor wafer and vapor growth device |
ATE452445T1 (en) | 1999-03-04 | 2010-01-15 | Nichia Corp | NITRIDE SEMICONDUCTOR LASER ELEMENT |
JP3496712B2 (en) | 1999-04-05 | 2004-02-16 | 日本電気株式会社 | Nitride compound semiconductor laser device and method of manufacturing the same |
US7233831B2 (en) | 1999-07-14 | 2007-06-19 | Color Kinetics Incorporated | Systems and methods for controlling programmable lighting systems |
WO2001018872A1 (en) | 1999-09-07 | 2001-03-15 | Sixon Inc. | SiC WAFER, SiC SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SiC WAFER |
US6451157B1 (en) | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
JP4145437B2 (en) | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate |
JP2001160627A (en) | 1999-11-30 | 2001-06-12 | Toyoda Gosei Co Ltd | Group III nitride compound semiconductor light emitting device |
US6452220B1 (en) | 1999-12-09 | 2002-09-17 | The Regents Of The University Of California | Current isolating epitaxial buffer layers for high voltage photodiode array |
JP2001177146A (en) | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | Triangular semiconductor device and manufacturing method thereof |
KR100545034B1 (en) | 2000-02-21 | 2006-01-24 | 가부시끼가이샤 히다치 세이사꾸쇼 | Plasma processing apparatus and method for processing substrate |
US6498440B2 (en) | 2000-03-27 | 2002-12-24 | Gentex Corporation | Lamp assembly incorporating optical feedback |
TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
US6554905B1 (en) | 2000-04-17 | 2003-04-29 | Asm America, Inc. | Rotating semiconductor processing apparatus |
US6621211B1 (en) | 2000-05-15 | 2003-09-16 | General Electric Company | White light emitting phosphor blends for LED devices |
US6423565B1 (en) | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
JP2001356701A (en) | 2000-06-15 | 2001-12-26 | Fuji Photo Film Co Ltd | Optical element, light source unit and display device |
US7043129B2 (en) | 2000-06-16 | 2006-05-09 | Wayne State University | Wide bandgap semiconductor waveguide structures |
JP3968968B2 (en) | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | Manufacturing method of single crystal GaN substrate |
JP3906653B2 (en) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | Image display device and manufacturing method thereof |
US6680959B2 (en) | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
AU2001288225A1 (en) | 2000-07-24 | 2002-02-05 | The University Of Maryland College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
WO2002021604A1 (en) | 2000-09-08 | 2002-03-14 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
US7053413B2 (en) | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
US7102158B2 (en) | 2000-10-23 | 2006-09-05 | General Electric Company | Light-based system for detecting analytes |
US6534797B1 (en) | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
WO2002041364A2 (en) | 2000-11-16 | 2002-05-23 | Emcore Corporation | Led packages having improved light extraction |
JP2002185085A (en) | 2000-12-12 | 2002-06-28 | Sharp Corp | Nitride-based semiconductor laser element and method of dividing chip |
JP2002190635A (en) | 2000-12-20 | 2002-07-05 | Sharp Corp | Semiconductor laser element and its fabricating method |
US7038399B2 (en) | 2001-03-13 | 2006-05-02 | Color Kinetics Incorporated | Methods and apparatus for providing power to lighting devices |
WO2002078096A1 (en) | 2001-03-23 | 2002-10-03 | Oriol, Inc. | TREATING N-TYPE GaN WITH A C12-BASED INDUCTIVELY COUPLED PLASMA BEFORE FORMATION OF OHMIC CONTACTS |
US6547249B2 (en) | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US6635904B2 (en) | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6939730B2 (en) | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
US6734530B2 (en) | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
US6488767B1 (en) | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
WO2002103866A1 (en) | 2001-06-15 | 2002-12-27 | Nichia Corporation | Semiconductor laser element, and its manufacturing method |
JP3639807B2 (en) | 2001-06-27 | 2005-04-20 | キヤノン株式会社 | Optical element and manufacturing method |
JP2003031844A (en) | 2001-07-11 | 2003-01-31 | Sony Corp | Method of manufacturing semiconductor light emitting device |
WO2003010745A1 (en) | 2001-07-23 | 2003-02-06 | Genoa Technologies Ltd. | Display for simulation of printed material |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
US20030030063A1 (en) | 2001-07-27 | 2003-02-13 | Krzysztof Sosniak | Mixed color leds for auto vanity mirrors and other applications where color differentiation is critical |
US6379985B1 (en) | 2001-08-01 | 2002-04-30 | Xerox Corporation | Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
US7027015B2 (en) | 2001-08-31 | 2006-04-11 | Intel Corporation | Compensating organic light emitting device displays for color variations |
KR100923804B1 (en) | 2001-09-03 | 2009-10-27 | 파나소닉 주식회사 | Method of manufacturing semiconductor light emitting device, light emitting device and semiconductor light emitting device |
JP3785970B2 (en) | 2001-09-03 | 2006-06-14 | 日本電気株式会社 | Method for manufacturing group III nitride semiconductor device |
US6616734B2 (en) | 2001-09-10 | 2003-09-09 | Nanotek Instruments, Inc. | Dynamic filtration method and apparatus for separating nano powders |
JP3801125B2 (en) | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, method for crystal growth of single crystal gallium nitride, and method for manufacturing single crystal gallium nitride substrate |
JP3864870B2 (en) | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, growth method thereof, and manufacturing method thereof |
US7303630B2 (en) | 2003-11-05 | 2007-12-04 | Sumitomo Electric Industries, Ltd. | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
WO2003029516A1 (en) | 2001-09-29 | 2003-04-10 | Cree, Inc. | Apparatus for inverted cvd |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
JP4097601B2 (en) | 2001-10-26 | 2008-06-11 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | Nitride semiconductor laser device and manufacturing method thereof |
US6833564B2 (en) | 2001-11-02 | 2004-12-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride separate confinement heterostructure light emitting devices |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US6977780B2 (en) | 2001-12-27 | 2005-12-20 | Fuji Photo Film Co., Ltd. | Image exposure device and laser exposure device applied thereto |
JP2003218034A (en) | 2002-01-17 | 2003-07-31 | Sony Corp | Selective growth method, semiconductor light emitting device and method of manufacturing the same |
JP3898537B2 (en) | 2002-03-19 | 2007-03-28 | 日本電信電話株式会社 | Nitride semiconductor thin film forming method and nitride semiconductor light emitting device |
US6891227B2 (en) | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
WO2004061909A1 (en) | 2002-12-16 | 2004-07-22 | The Regents Of The University Of California | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
CN100439561C (en) | 2002-04-19 | 2008-12-03 | 马特森技术公司 | System for depositing a film onto a substrate using a low vapor pressure gas precursor |
US7008484B2 (en) | 2002-05-06 | 2006-03-07 | Applied Materials Inc. | Method and apparatus for deposition of low dielectric constant materials |
US7358679B2 (en) | 2002-05-09 | 2008-04-15 | Philips Solid-State Lighting Solutions, Inc. | Dimmable LED-based MR16 lighting apparatus and methods |
AUPS240402A0 (en) | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
JP4027164B2 (en) | 2002-06-21 | 2007-12-26 | 株式会社日立製作所 | Display device |
JP2004047748A (en) | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | Light emitting diode |
US6995032B2 (en) | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
JP3861036B2 (en) | 2002-08-09 | 2006-12-20 | 三菱重工業株式会社 | Plasma CVD equipment |
US20050218780A1 (en) | 2002-09-09 | 2005-10-06 | Hsing Chen | Method for manufacturing a triple wavelengths white LED |
CN1682384B (en) | 2002-09-19 | 2010-06-09 | 克里公司 | Phosphor-coated light-emitting diode including tapered sidewalls and method of manufacturing the same |
US6809781B2 (en) | 2002-09-24 | 2004-10-26 | General Electric Company | Phosphor blends and backlight sources for liquid crystal displays |
JP3910517B2 (en) | 2002-10-07 | 2007-04-25 | シャープ株式会社 | LED device |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US8089097B2 (en) | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
US7067995B2 (en) | 2003-01-15 | 2006-06-27 | Luminator, Llc | LED lighting system |
TWI230978B (en) | 2003-01-17 | 2005-04-11 | Sanken Electric Co Ltd | Semiconductor device and the manufacturing method thereof |
US7118438B2 (en) | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
JP2004241570A (en) | 2003-02-05 | 2004-08-26 | Fujitsu Ltd | Semiconductor laser |
JP3778186B2 (en) | 2003-02-18 | 2006-05-24 | 株式会社豊田自動織機 | Light guide plate |
US6864641B2 (en) | 2003-02-20 | 2005-03-08 | Visteon Global Technologies, Inc. | Method and apparatus for controlling light emitting diodes |
JP2004273798A (en) | 2003-03-10 | 2004-09-30 | Toyoda Gosei Co Ltd | Light emitting device |
EP1603170B1 (en) | 2003-03-10 | 2018-08-01 | Toyoda Gosei Co., Ltd. | Method for manufacturing a solid-state optical element device |
US7068905B2 (en) | 2003-03-12 | 2006-06-27 | Daryoosh Vakhshoori | Extended optical bandwidth semiconductor source |
KR100678407B1 (en) | 2003-03-18 | 2007-02-02 | 크리스탈 포토닉스, 인코포레이티드 | Method of manufacturing group III nitride device and device manufactured by this method |
EP1616981A4 (en) | 2003-04-03 | 2009-06-03 | Tokyo Denpa Kk | MONOCRYSTAL ZINC OXIDE |
CN1538534A (en) | 2003-04-15 | 2004-10-20 | 郑荣彬 | White light illuminating device |
US7118781B1 (en) | 2003-04-16 | 2006-10-10 | Cree, Inc. | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
CN100502062C (en) | 2003-04-30 | 2009-06-17 | 美商克立股份有限公司 | High Power Illuminator Package with Small Optics |
US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US6989807B2 (en) | 2003-05-19 | 2006-01-24 | Add Microtech Corp. | LED driving device |
WO2004111297A1 (en) | 2003-06-10 | 2004-12-23 | Tokyo Electron Limited | Treatment gas supply mechanism, film-forming device, and film-forming method |
WO2005004247A1 (en) | 2003-07-03 | 2005-01-13 | Epivalley Co., Ltd. | Iii-nitride compound semiconductor light emitting device |
JP4011569B2 (en) | 2003-08-20 | 2007-11-21 | 株式会社東芝 | Semiconductor light emitting device |
WO2005022654A2 (en) | 2003-08-28 | 2005-03-10 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
JP2005085942A (en) | 2003-09-08 | 2005-03-31 | Seiko Epson Corp | Optical module, optical transmission device |
TWI329724B (en) | 2003-09-09 | 2010-09-01 | Koninkl Philips Electronics Nv | Integrated lamp with feedback and wireless control |
US7341880B2 (en) | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
DE602004019169D1 (en) | 2003-09-22 | 2009-03-12 | Fujifilm Corp | Fine organic pigment particles and process for their preparation |
US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7009215B2 (en) | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7128849B2 (en) | 2003-10-31 | 2006-10-31 | General Electric Company | Phosphors containing boron and metals of Group IIIA and IIIB |
US7323256B2 (en) | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
KR101156146B1 (en) | 2003-12-09 | 2012-06-18 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | Highly efficient group-iii nitride based light emitting diodes via fabrication of structures on an n-face surface |
US7095056B2 (en) | 2003-12-10 | 2006-08-22 | Sensor Electronic Technology, Inc. | White light emitting device and method |
US7318651B2 (en) | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
US20060038542A1 (en) | 2003-12-23 | 2006-02-23 | Tessera, Inc. | Solid state lighting device |
US7384481B2 (en) | 2003-12-29 | 2008-06-10 | Translucent Photonics, Inc. | Method of forming a rare-earth dielectric layer |
JP4789809B2 (en) | 2004-01-15 | 2011-10-12 | サムスン エレクトロニクス カンパニー リミテッド | Matrix doped with nanocrystals |
JP4279698B2 (en) | 2004-01-30 | 2009-06-17 | シャープ株式会社 | LED element driving method and driving device, lighting device and display device |
TWI229463B (en) | 2004-02-02 | 2005-03-11 | South Epitaxy Corp | Light-emitting diode structure with electro-static discharge protection |
US20050285128A1 (en) | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
KR20070007303A (en) | 2004-03-03 | 2007-01-15 | 에스.씨. 존슨 앤드 선, 인코포레이티드 | LED Bulb Emitting Active Ingredients |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
JP4805831B2 (en) | 2004-03-18 | 2011-11-02 | パナソニック株式会社 | Semiconductor light emitting device, lighting module, lighting device, surface mount component, and display device |
JP2007529910A (en) | 2004-03-19 | 2007-10-25 | アリゾナ ボード オブ リージェンツ | High output VCSEL with lateral mode control |
US7083302B2 (en) | 2004-03-24 | 2006-08-01 | J. S. Technology Co., Ltd. | White light LED assembly |
KR100568297B1 (en) | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | Nitride semiconductor light emitting device and its manufacturing method |
US7285801B2 (en) | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
US8035113B2 (en) | 2004-04-15 | 2011-10-11 | The Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
US7061026B2 (en) | 2004-04-16 | 2006-06-13 | Arima Optoelectronics Corp. | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer |
US7285799B2 (en) | 2004-04-21 | 2007-10-23 | Philip Lumileds Lighting Company, Llc | Semiconductor light emitting devices including in-plane light emitting layers |
KR100718188B1 (en) | 2004-05-07 | 2007-05-15 | 삼성코닝 주식회사 | Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof |
EP1598681A3 (en) | 2004-05-17 | 2006-03-01 | Carl Zeiss SMT AG | Optical component with curved surface and multi-layer coating |
US7956360B2 (en) | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
US8227820B2 (en) | 2005-02-09 | 2012-07-24 | The Regents Of The University Of California | Semiconductor light-emitting device |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
US6956246B1 (en) | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
US7709284B2 (en) | 2006-08-16 | 2010-05-04 | The Regents Of The University Of California | Method for deposition of magnesium doped (Al, In, Ga, B)N layers |
US9130119B2 (en) | 2006-12-11 | 2015-09-08 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
US20080092812A1 (en) | 2004-06-10 | 2008-04-24 | Mcdiarmid James | Methods and Apparatuses for Depositing Uniform Layers |
US7019325B2 (en) | 2004-06-16 | 2006-03-28 | Exalos Ag | Broadband light emitting device |
KR100541110B1 (en) | 2004-06-25 | 2006-01-11 | 삼성전기주식회사 | Multi-wavelength semiconductor laser manufacturing method |
CN101032034A (en) | 2004-06-30 | 2007-09-05 | 克里公司 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
WO2006004337A1 (en) | 2004-06-30 | 2006-01-12 | Seoul Opto-Device Co., Ltd. | Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same |
US7252408B2 (en) | 2004-07-19 | 2007-08-07 | Lamina Ceramics, Inc. | LED array package with internal feedback and control |
KR20070058465A (en) | 2004-08-06 | 2007-06-08 | 미쓰비시 가가꾸 가부시키가이샤 | Baa-containing nitride semiconductor single crystal, its production method, and substrate and device using the crystal |
JP4290095B2 (en) | 2004-08-16 | 2009-07-01 | キヤノン株式会社 | Display optical system and image display system |
JP2006086516A (en) | 2004-08-20 | 2006-03-30 | Showa Denko Kk | Manufacturing method of semiconductor light emitting device |
JP2006073076A (en) | 2004-09-01 | 2006-03-16 | Fujinon Corp | Object optical system for optical recording medium, and optical pickup device using the same |
US7737459B2 (en) | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7724321B2 (en) | 2004-09-24 | 2010-05-25 | Epistar Corporation | Liquid crystal display |
EP1809788A4 (en) | 2004-09-27 | 2008-05-21 | Gallium Entpr Pty Ltd | Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film |
DE102004047669A1 (en) | 2004-09-30 | 2006-04-13 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Lighting device and method of control |
JP2006108435A (en) | 2004-10-06 | 2006-04-20 | Sumitomo Electric Ind Ltd | Nitride semiconductor wafer |
KR100661708B1 (en) | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | Nitride semiconductor light emitting device and manufacturing method |
US20060097385A1 (en) | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
JP4581646B2 (en) | 2004-11-22 | 2010-11-17 | パナソニック電工株式会社 | Light emitting diode lighting device |
US7326963B2 (en) | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
US7751455B2 (en) | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
KR100661709B1 (en) | 2004-12-23 | 2006-12-26 | 엘지이노텍 주식회사 | Nitride semiconductor light emitting device and manufacturing method |
US7863829B2 (en) | 2004-12-30 | 2011-01-04 | Solarone Solutions, Inc. | LED lighting system |
US7199918B2 (en) | 2005-01-07 | 2007-04-03 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
US8318519B2 (en) | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US7897420B2 (en) | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7646033B2 (en) | 2005-01-11 | 2010-01-12 | Semileds Corporation | Systems and methods for producing white-light light emitting diodes |
EP1681712A1 (en) | 2005-01-13 | 2006-07-19 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of producing substrates for optoelectronic applications |
US7221044B2 (en) | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
US7704324B2 (en) | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
US7535028B2 (en) | 2005-02-03 | 2009-05-19 | Ac Led Lighting, L.Lc. | Micro-LED based high voltage AC/DC indicator lamp |
US7081722B1 (en) | 2005-02-04 | 2006-07-25 | Kimlong Huynh | Light emitting diode multiphase driver circuit and method |
US7932111B2 (en) | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
JP2006270028A (en) | 2005-02-25 | 2006-10-05 | Mitsubishi Electric Corp | Semiconductor light emitting element |
WO2006093174A1 (en) | 2005-03-04 | 2006-09-08 | Sumitomo Electric Industries, Ltd. | Vertical gallium nitride semiconductor device and epitaxial substrate |
WO2006095285A1 (en) | 2005-03-09 | 2006-09-14 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a radiation source and a fluorescent material |
TWI453813B (en) | 2005-03-10 | 2014-09-21 | Univ California | Technology for growing flat semipolar gallium nitride |
WO2006099211A2 (en) | 2005-03-11 | 2006-09-21 | Ponce Fernando A | Solid state light emitting device |
JP4104013B2 (en) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | LIGHT EMITTING DEVICE AND LIGHTING DEVICE |
JP5010108B2 (en) | 2005-03-25 | 2012-08-29 | 株式会社沖データ | Semiconductor composite device, print head, and image forming apparatus using the same |
EP1869526B1 (en) | 2005-03-30 | 2019-11-06 | Necsel Intellectual Property, Inc. | Manufacturable vertical extended cavity surface emitting laser arrays |
US8345252B2 (en) | 2005-04-25 | 2013-01-01 | X-Rite, Inc. | Method and system for enhanced formulation and visualization rendering |
US7483466B2 (en) | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
KR100704492B1 (en) | 2005-05-02 | 2007-04-09 | 한국화학연구원 | Method for manufacturing white light emitting diode using phosphor |
US7574791B2 (en) | 2005-05-10 | 2009-08-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method to fabricate side shields for a magnetic sensor |
JP4636501B2 (en) | 2005-05-12 | 2011-02-23 | 株式会社沖データ | Semiconductor device, print head, and image forming apparatus |
US7766518B2 (en) | 2005-05-23 | 2010-08-03 | Philips Solid-State Lighting Solutions, Inc. | LED-based light-generating modules for socket engagement, and methods of assembling, installing and removing same |
US7358543B2 (en) | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
TWI377602B (en) | 2005-05-31 | 2012-11-21 | Japan Science & Tech Agency | Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) |
KR101351396B1 (en) | 2005-06-01 | 2014-02-07 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices |
US7279040B1 (en) | 2005-06-16 | 2007-10-09 | Fairfield Crystal Technology, Llc | Method and apparatus for zinc oxide single crystal boule growth |
US20100220262A1 (en) | 2008-08-05 | 2010-09-02 | The Regents Of The University Of California | Linearly polarized backlight source in conjunction with polarized phosphor emission screens for use in liquid crystal displays |
WO2007002151A2 (en) | 2005-06-21 | 2007-01-04 | The Regents Of The University Of California | Packaging technique for the fabrication of polarized light emitting diodes |
US8148713B2 (en) | 2008-04-04 | 2012-04-03 | The Regents Of The University Of California | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes |
US7887631B2 (en) | 2005-06-24 | 2011-02-15 | The Gemesis Corporation | System and high pressure, high temperature apparatus for producing synthetic diamonds |
US20070018182A1 (en) | 2005-07-20 | 2007-01-25 | Goldeneye, Inc. | Light emitting diodes with improved light extraction and reflectivity |
US7799236B2 (en) | 2005-08-30 | 2010-09-21 | Lg Chem, Ltd. | Gathering method and apparatus of powder separated soluble component |
JP5501618B2 (en) | 2005-09-07 | 2014-05-28 | クリー インコーポレイテッド | High electron transfer transistor (HEMT), semiconductor device and manufacturing method thereof |
JP2007110090A (en) | 2005-09-13 | 2007-04-26 | Sony Corp | GaN-based semiconductor light emitting device, light emitting device, image display device, planar light source device, and liquid crystal display device assembly |
JP2007081180A (en) | 2005-09-15 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
US8661660B2 (en) | 2005-09-22 | 2014-03-04 | The Artak Ter-Hovhanissian Patent Trust | Process for manufacturing LED lighting with integrated heat sink |
US20070081857A1 (en) | 2005-10-07 | 2007-04-12 | Yoon Jung H | Four parts manhole enabling an easy install and height adjustment |
US20070086916A1 (en) | 2005-10-14 | 2007-04-19 | General Electric Company | Faceted structure, article, sensor device, and method |
US20080099777A1 (en) | 2005-10-19 | 2008-05-01 | Luminus Devices, Inc. | Light-emitting devices and related systems |
US20070096239A1 (en) | 2005-10-31 | 2007-05-03 | General Electric Company | Semiconductor devices and methods of manufacture |
JP4879563B2 (en) | 2005-11-16 | 2012-02-22 | パナソニック株式会社 | Group III nitride semiconductor light emitting device |
EP1788619A3 (en) | 2005-11-18 | 2009-09-09 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
DE102005055252A1 (en) | 2005-11-19 | 2007-05-24 | Aixtron Ag | CVD reactor with slide-mounted susceptor holder |
JP4696886B2 (en) | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | Method for manufacturing self-supporting gallium nitride single crystal substrate and method for manufacturing nitride semiconductor device |
US7897490B2 (en) | 2005-12-12 | 2011-03-01 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
JP5191650B2 (en) | 2005-12-16 | 2013-05-08 | シャープ株式会社 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device |
EP2372223A3 (en) | 2005-12-21 | 2012-08-01 | Cree, Inc. | Lighting Device and Lighting Method |
JP4534978B2 (en) | 2005-12-21 | 2010-09-01 | トヨタ自動車株式会社 | Semiconductor thin film manufacturing equipment |
US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
PL1801855T3 (en) | 2005-12-22 | 2009-06-30 | Freiberger Compound Mat Gmbh | Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices |
US7148515B1 (en) | 2006-01-07 | 2006-12-12 | Tyntek Corp. | Light emitting device having integrated rectifier circuit in substrate |
JP5108532B2 (en) | 2006-01-18 | 2012-12-26 | パナソニック株式会社 | Nitride semiconductor light emitting device |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP5896442B2 (en) | 2006-01-20 | 2016-03-30 | 国立研究開発法人科学技術振興機構 | Group III nitride film growth method |
US7528422B2 (en) | 2006-01-20 | 2009-05-05 | Hymite A/S | Package for a light emitting element with integrated electrostatic discharge protection |
CN101009347A (en) | 2006-01-27 | 2007-08-01 | 中国科学院物理研究所 | Non polarity A side nitride film growing on the silicon(102) substrate and its making method and use |
JP4711838B2 (en) | 2006-01-27 | 2011-06-29 | 株式会社東芝 | Multi-wavelength semiconductor laser device |
EP1835786B1 (en) | 2006-02-24 | 2009-07-01 | Sefar AG | Planar heating element and process for manufacturing a planar heating element |
KR100896576B1 (en) | 2006-02-24 | 2009-05-07 | 삼성전기주식회사 | Nitride-based semiconductor light emitting device and its manufacturing method |
US7937865B2 (en) | 2006-03-08 | 2011-05-10 | Intematix Corporation | Light emitting sign and display surface therefor |
JP4660400B2 (en) | 2006-03-14 | 2011-03-30 | シャープ株式会社 | Manufacturing method of nitride semiconductor laser device |
US8404071B2 (en) | 2006-03-16 | 2013-03-26 | Radpax, Inc. | Rapid film bonding using pattern printed adhesive |
KR100765075B1 (en) | 2006-03-26 | 2007-10-09 | 엘지이노텍 주식회사 | Nitride semiconductor light emitting device and manufacturing method thereof |
JP2007273492A (en) | 2006-03-30 | 2007-10-18 | Mitsubishi Electric Corp | Nitride semiconductor device and its manufacturing method |
US7459380B2 (en) | 2006-05-05 | 2008-12-02 | Applied Materials, Inc. | Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films |
KR100735496B1 (en) | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | Method for manufacturing vertical structure gallium nitride based LED device |
US7480322B2 (en) | 2006-05-15 | 2009-01-20 | The Regents Of The University Of California | Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser |
KR101263934B1 (en) | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | Light emitting diode and method of manufacturing thesame |
JP4819577B2 (en) | 2006-05-31 | 2011-11-24 | キヤノン株式会社 | Pattern transfer method and pattern transfer apparatus |
JP4854566B2 (en) | 2006-06-15 | 2012-01-18 | シャープ株式会社 | Nitride semiconductor light emitting device manufacturing method and nitride semiconductor light emitting device |
EP2041802B1 (en) | 2006-06-23 | 2013-11-13 | LG Electronics Inc. | Light emitting diode having vertical topology and method of making the same |
KR100854328B1 (en) | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | Light emitting device package and its manufacturing method |
US20090273005A1 (en) | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
JP4957110B2 (en) | 2006-08-03 | 2012-06-20 | 日亜化学工業株式会社 | Light emitting device |
US20080029152A1 (en) | 2006-08-04 | 2008-02-07 | Erel Milshtein | Laser scribing apparatus, systems, and methods |
JP5271258B2 (en) | 2006-08-09 | 2013-08-21 | パナソニック株式会社 | Light emitting device |
US7374960B1 (en) | 2006-08-23 | 2008-05-20 | Applied Materials, Inc. | Stress measurement and stress balance in films |
EP2060155A2 (en) | 2006-08-23 | 2009-05-20 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
TWI318013B (en) | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
WO2008032557A1 (en) | 2006-09-12 | 2008-03-20 | Konica Minolta Holdings, Inc. | Organic electroluminescence element, and illuminating device and display device provided with the organic electroluminescence element |
US8362603B2 (en) | 2006-09-14 | 2013-01-29 | Luminus Devices, Inc. | Flexible circuit light-emitting structures |
US7705276B2 (en) | 2006-09-14 | 2010-04-27 | Momentive Performance Materials Inc. | Heater, apparatus, and associated method |
JP2008084973A (en) | 2006-09-26 | 2008-04-10 | Stanley Electric Co Ltd | Semiconductor light emitting device |
JP4246242B2 (en) | 2006-09-27 | 2009-04-02 | 三菱電機株式会社 | Semiconductor light emitting device |
JP2008109066A (en) | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | Light emitting element |
US7714348B2 (en) | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
CN101535532A (en) | 2006-10-08 | 2009-09-16 | 迈图高新材料公司 | Method for forming nitride crystals |
CN101522962A (en) | 2006-10-16 | 2009-09-02 | 三菱化学株式会社 | Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device |
KR100837404B1 (en) | 2006-10-18 | 2008-06-12 | 삼성전자주식회사 | Semiconductor photoelectric device |
JP2008135697A (en) | 2006-10-23 | 2008-06-12 | Rohm Co Ltd | Semiconductor light emitting device |
JP4827698B2 (en) | 2006-10-27 | 2011-11-30 | キヤノン株式会社 | Method for forming light emitting element |
JP2008147608A (en) | 2006-10-27 | 2008-06-26 | Canon Inc | LED array manufacturing method, LED array, and LED printer |
TWI371870B (en) | 2006-11-08 | 2012-09-01 | Epistar Corp | Alternate current light-emitting device and fabrication method thereof |
US8283699B2 (en) | 2006-11-13 | 2012-10-09 | Cree, Inc. | GaN based HEMTs with buried field plates |
TWI349902B (en) | 2006-11-16 | 2011-10-01 | Chunghwa Picture Tubes Ltd | Controlling apparatuses for controlling a plurality of led strings and related light modules |
US7598104B2 (en) | 2006-11-24 | 2009-10-06 | Agency For Science, Technology And Research | Method of forming a metal contact and passivation of a semiconductor feature |
JP2008141118A (en) | 2006-12-05 | 2008-06-19 | Rohm Co Ltd | Semiconductor white light emitting device |
TWI533351B (en) | 2006-12-11 | 2016-05-11 | 美國加利福尼亞大學董事會 | Metal organic chemical vapor deposition growth of high performance non-polar Group III nitride optical devices |
WO2008073435A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Lead frame for transparent and mirrorless light emitting diode |
WO2009002365A1 (en) | 2006-12-15 | 2008-12-31 | University Of South Carolina | Pulsed selective area lateral epitaxy for growth of iii-nitride materials over non-polar and semi-polar substrates |
US20080217745A1 (en) | 2006-12-19 | 2008-09-11 | Sumitomo Electric Industries, Ltd. | Nitride Semiconductor Wafer |
US20110108081A1 (en) | 2006-12-20 | 2011-05-12 | Jds Uniphase Corporation | Photovoltaic Power Converter |
EP2865790A1 (en) | 2006-12-28 | 2015-04-29 | Saint-Gobain Ceramics & Plastics Inc. | Sapphire substrates |
JP2008172040A (en) | 2007-01-12 | 2008-07-24 | Sony Corp | Semiconductor light emitting element, method of manufacturing semiconductor light emitting element, backlight, display and electronic equipment |
KR101464228B1 (en) | 2007-01-12 | 2014-11-21 | 비코 인스트루먼츠 인코포레이티드 | Gas treatment systems |
CN102683376A (en) | 2007-01-22 | 2012-09-19 | 科锐公司 | High-pressure light emitter, light emitter and illumination device |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
JP2008198650A (en) | 2007-02-08 | 2008-08-28 | Toshiba Discrete Technology Kk | Semiconductor light emitting device and semiconductor light emitting device |
TW200834962A (en) | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
US7839903B2 (en) | 2007-02-12 | 2010-11-23 | The Regents Of The University Of California | Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers |
EP2111632A1 (en) | 2007-02-12 | 2009-10-28 | The Regents of the University of California | Cleaved facet (ga,al,in)n edge-emitting laser diodes grown on semipolar {11-2n} bulk gallium nitride substrates |
US7652305B2 (en) | 2007-02-23 | 2010-01-26 | Corning Incorporated | Methods and apparatus to improve frit-sealed glass package |
JP5162926B2 (en) | 2007-03-07 | 2013-03-13 | 三菱電機株式会社 | Manufacturing method of semiconductor laser device |
US7768020B2 (en) | 2007-03-13 | 2010-08-03 | Seoul Opto Device Co., Ltd. | AC light emitting diode |
KR100974923B1 (en) | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | Light emitting diode |
US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
JP2008235802A (en) | 2007-03-23 | 2008-10-02 | Rohm Co Ltd | Light-emitting device |
JP5032171B2 (en) | 2007-03-26 | 2012-09-26 | 株式会社東芝 | Semiconductor light emitting device, method for manufacturing the same, and light emitting device |
US8088670B2 (en) | 2007-04-18 | 2012-01-03 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing bonded substrate with sandblast treatment |
CN100580905C (en) | 2007-04-20 | 2010-01-13 | 晶能光电(江西)有限公司 | Method for obtaining high quality margins of semiconductor devices fabricated on segmented substrates |
US20080258165A1 (en) | 2007-04-23 | 2008-10-23 | Goldeneye, Inc. | Light emitting diode chip |
JP2008311640A (en) | 2007-05-16 | 2008-12-25 | Rohm Co Ltd | Semiconductor laser diode |
JP2008285364A (en) | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN substrate, epitaxial substrate and semiconductor light emitting device using the same |
KR100867551B1 (en) | 2007-05-18 | 2008-11-10 | 삼성전기주식회사 | LED array driving device |
JP4614988B2 (en) | 2007-05-31 | 2011-01-19 | シャープ株式会社 | Nitride-based semiconductor laser device and manufacturing method thereof |
US20080303033A1 (en) | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
JP5118392B2 (en) | 2007-06-08 | 2013-01-16 | ローム株式会社 | Semiconductor light emitting device and manufacturing method thereof |
EP2003696B1 (en) | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
EP2003230A2 (en) | 2007-06-14 | 2008-12-17 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with an epitaxial layer, semiconductor device, and GaN substrate manufacturing method |
KR101459752B1 (en) | 2007-06-22 | 2014-11-13 | 엘지이노텍 주식회사 | Semiconductor light emitting device and manufacturing method thereof |
GB2450377A (en) | 2007-06-23 | 2008-12-24 | Ian Charles Williamson | Vehicle load and parking warning system |
US7619746B2 (en) | 2007-07-19 | 2009-11-17 | Zygo Corporation | Generating model signals for interferometry |
US7733571B1 (en) | 2007-07-24 | 2010-06-08 | Rockwell Collins, Inc. | Phosphor screen and displays systems |
JP5041902B2 (en) | 2007-07-24 | 2012-10-03 | 三洋電機株式会社 | Semiconductor laser element |
EP2171522A2 (en) | 2007-07-25 | 2010-04-07 | Koninklijke Philips Electronics N.V. | Color conversion device and color controllable light-output device |
JP5044329B2 (en) * | 2007-08-31 | 2012-10-10 | 株式会社東芝 | Light emitting device |
JP4584293B2 (en) | 2007-08-31 | 2010-11-17 | 富士通株式会社 | Nitride semiconductor device, Doherty amplifier, drain voltage control amplifier |
US7791093B2 (en) | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
JP2009065048A (en) | 2007-09-07 | 2009-03-26 | Rohm Co Ltd | Semiconductor light-emitting element and method of manufacturing the same |
US7727874B2 (en) | 2007-09-14 | 2010-06-01 | Kyma Technologies, Inc. | Non-polar and semi-polar GaN substrates, devices, and methods for making them |
US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
US8750688B2 (en) | 2007-09-21 | 2014-06-10 | Echostar Technologies L.L.C. | Systems and methods for selectively recording at least part of a program based on an occurrence of a video or audio characteristic in the program |
US8058663B2 (en) | 2007-09-26 | 2011-11-15 | Iii-N Technology, Inc. | Micro-emitter array based full-color micro-display |
US7737457B2 (en) | 2007-09-27 | 2010-06-15 | Lumination Llc | Phosphor down converting element for an LED package and fabrication method |
US8783887B2 (en) | 2007-10-01 | 2014-07-22 | Intematix Corporation | Color tunable light emitting device |
JP2009141340A (en) | 2007-11-12 | 2009-06-25 | Rohm Co Ltd | Nitride semiconductor laser element |
US7985970B2 (en) | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
US20110017298A1 (en) | 2007-11-14 | 2011-01-27 | Stion Corporation | Multi-junction solar cell devices |
EP2221885A4 (en) | 2007-11-19 | 2013-09-25 | Panasonic Corp | SEMICONDUCTOR LIGHTING ELEMENT AND METHOD FOR PRODUCING A SEMICONDUCTOR LIGHTING ELEMENT |
TWI452726B (en) | 2007-11-30 | 2014-09-11 | Univ California | Nitride-based light-emitting diode using high light extraction efficiency of surface roughness |
US20090140279A1 (en) | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
US20090153752A1 (en) | 2007-12-14 | 2009-06-18 | Silverstein Barry D | Projector using independent multiple wavelength light sources |
DE102008012859B4 (en) | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laser light source with a filter structure |
US20090173958A1 (en) | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
JP2009200178A (en) | 2008-02-20 | 2009-09-03 | Hitachi Cable Ltd | Semiconductor light-emitting device |
JP5003527B2 (en) | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Group III nitride light emitting device and method for fabricating group III nitride semiconductor light emitting device |
US8545626B2 (en) | 2008-03-03 | 2013-10-01 | Mitsubishi Chemical Corporation | Nitride semiconductor crystal and its production method |
JP5053893B2 (en) | 2008-03-07 | 2012-10-24 | 住友電気工業株式会社 | Method for fabricating a nitride semiconductor laser |
JP2009252861A (en) | 2008-04-03 | 2009-10-29 | Rohm Co Ltd | Semiconductor laser device |
US20090310640A1 (en) | 2008-04-04 | 2009-12-17 | The Regents Of The University Of California | MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES |
KR101092079B1 (en) | 2008-04-24 | 2011-12-12 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
JP2009283912A (en) | 2008-04-25 | 2009-12-03 | Sanyo Electric Co Ltd | Nitride-based semiconductor device and method of manufacturing the same |
JP2011524064A (en) | 2008-05-06 | 2011-08-25 | キユーデイー・ビジヨン・インコーポレーテツド | Solid state lighting device containing quantum confined semiconductor nanoparticles |
US8757812B2 (en) | 2008-05-19 | 2014-06-24 | University of Washington UW TechTransfer—Invention Licensing | Scanning laser projection display devices and methods for projecting one or more images onto a surface with a light-scanning optical fiber |
KR100998011B1 (en) | 2008-05-22 | 2010-12-03 | 삼성엘이디 주식회사 | Chemical Vapor Deposition Equipment |
US20110180781A1 (en) | 2008-06-05 | 2011-07-28 | Soraa, Inc | Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN |
US20090309127A1 (en) | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
TWI384898B (en) | 2008-06-18 | 2013-02-01 | Delta Electronics Inc | Dimmable led driving circuit |
US20100006873A1 (en) | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
CN101621101A (en) | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | LED and production method thereof |
WO2010005914A1 (en) | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
US8232502B2 (en) | 2008-07-08 | 2012-07-31 | Acme Services Company, Llp | Laser engraving of ceramic articles |
US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
JP4475358B1 (en) | 2008-08-04 | 2010-06-09 | 住友電気工業株式会社 | GaN-based semiconductor optical device, method for manufacturing GaN-based semiconductor optical device, and epitaxial wafer |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
CN105762249A (en) | 2008-08-04 | 2016-07-13 | Soraa有限公司 | White Light Devices Using Non-polar Or Semipolar Gallium Containing Materials And Phosphors |
KR101332794B1 (en) | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | Light emitting device, light emitting system comprising the same, and fabricating method of the light emitting device and the light emitting system |
US20100117118A1 (en) | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
JP4599442B2 (en) | 2008-08-27 | 2010-12-15 | 株式会社東芝 | Manufacturing method of semiconductor light emitting device |
WO2010027648A1 (en) | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | I i-vi mqw vcsel on a heat sink optically pumped by a gan ld |
US8143769B2 (en) | 2008-09-08 | 2012-03-27 | Intematix Corporation | Light emitting diode (LED) lighting device |
CN101874309B (en) | 2008-09-11 | 2013-01-30 | 住友电气工业株式会社 | Nitride-based semiconductor optical element, epitaxial wafer for nitride-based semiconductor optical element, and method for manufacturing semiconductor light-emitting element |
US20100295088A1 (en) | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
JP2010118647A (en) | 2008-10-17 | 2010-05-27 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, method of manufacturing nitride-based semiconductor light emitting element, and light emitting device |
JP2012507874A (en) | 2008-10-31 | 2012-03-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Optoelectronic devices based on nonpolar or semipolar AlInN and AlInGaN alloys |
US8017415B2 (en) | 2008-11-05 | 2011-09-13 | Goldeneye, Inc. | Dual sided processing and devices based on freestanding nitride and zinc oxide films |
US8062916B2 (en) | 2008-11-06 | 2011-11-22 | Koninklijke Philips Electronics N.V. | Series connected flip chip LEDs with growth substrate removed |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
TW201114003A (en) | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
US8169135B2 (en) | 2008-12-17 | 2012-05-01 | Lednovation, Inc. | Semiconductor lighting device with wavelength conversion on back-transferred light path |
US8044609B2 (en) | 2008-12-31 | 2011-10-25 | 02Micro Inc | Circuits and methods for controlling LCD backlights |
US7923741B1 (en) | 2009-01-05 | 2011-04-12 | Lednovation, Inc. | Semiconductor lighting device with reflective remote wavelength conversion |
JP2010177651A (en) | 2009-02-02 | 2010-08-12 | Rohm Co Ltd | Semiconductor laser device |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8252662B1 (en) | 2009-03-28 | 2012-08-28 | Soraa, Inc. | Method and structure for manufacture of light emitting diode devices using bulk GaN |
US8422525B1 (en) | 2009-03-28 | 2013-04-16 | Soraa, Inc. | Optical device structure using miscut GaN substrates for laser applications |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US9531164B2 (en) | 2009-04-13 | 2016-12-27 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8294179B1 (en) | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
WO2010119375A1 (en) | 2009-04-16 | 2010-10-21 | Koninklijke Philips Electronics N.V. | Red emitting luminescent materials |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8126024B1 (en) | 2009-04-17 | 2012-02-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater |
US8455332B2 (en) | 2009-05-01 | 2013-06-04 | Bridgelux, Inc. | Method and apparatus for manufacturing LED devices using laser scribing |
US8337030B2 (en) * | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
US8749030B2 (en) | 2009-05-29 | 2014-06-10 | Soraa, Inc. | Surface morphology of non-polar gallium nitride containing substrates |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
CN105824179B (en) | 2009-05-29 | 2018-01-30 | 天空激光二极管有限公司 | A kind of optical projection system |
US8324840B2 (en) | 2009-06-04 | 2012-12-04 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
US8410717B2 (en) | 2009-06-04 | 2013-04-02 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
CN102460739A (en) | 2009-06-05 | 2012-05-16 | 加利福尼亚大学董事会 | Long wavelength nonpolar and semipolar (al,ga,in)n based laser diodes |
US7933303B2 (en) | 2009-06-17 | 2011-04-26 | Sumitomo Electric Industries, Ltd. | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device |
KR100942234B1 (en) | 2009-07-23 | 2010-02-12 | (주)로그인디지탈 | Illumination system of using light emitting diode |
US20110038154A1 (en) | 2009-08-11 | 2011-02-17 | Jyotirmoy Chakravarty | System and methods for lighting and heat dissipation |
US20110056429A1 (en) | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
US8350273B2 (en) | 2009-08-31 | 2013-01-08 | Infineon Technologies Ag | Semiconductor structure and a method of forming the same |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
CN107256915A (en) | 2009-09-18 | 2017-10-17 | 天空公司 | LED device |
KR100958700B1 (en) | 2009-09-21 | 2010-05-18 | 금호전기주식회사 | Oxynitride phosphor, method for manufacturing the same and light-emitting device comprising the same |
US20110186887A1 (en) | 2009-09-21 | 2011-08-04 | Soraa, Inc. | Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials |
US20110068700A1 (en) | 2009-09-21 | 2011-03-24 | Suntec Enterprises | Method and apparatus for driving multiple LED devices |
JP5515575B2 (en) | 2009-09-30 | 2014-06-11 | 住友電気工業株式会社 | Group III nitride semiconductor optical device, epitaxial substrate, and method of manufacturing group III nitride semiconductor optical device |
JP5387302B2 (en) | 2009-09-30 | 2014-01-15 | 住友電気工業株式会社 | Group III nitride semiconductor laser device and method of manufacturing group III nitride semiconductor laser device |
US8269245B1 (en) | 2009-10-30 | 2012-09-18 | Soraa, Inc. | Optical device with wavelength selective reflector |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
CN102598271A (en) | 2009-11-03 | 2012-07-18 | 加利福尼亚大学董事会 | Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays |
US20110103418A1 (en) | 2009-11-03 | 2011-05-05 | The Regents Of The University Of California | Superluminescent diodes by crystallographic etching |
US8471280B2 (en) | 2009-11-06 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler |
US8203161B2 (en) | 2009-11-23 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Wavelength converted semiconductor light emitting device |
TW201118946A (en) | 2009-11-24 | 2011-06-01 | Chun-Yen Chang | Method for manufacturing free-standing substrate and free-standing light-emitting device |
JP5251893B2 (en) | 2010-01-21 | 2013-07-31 | 日立電線株式会社 | Method for producing conductive group III nitride crystal and method for producing conductive group III nitride substrate |
US8508116B2 (en) | 2010-01-27 | 2013-08-13 | Cree, Inc. | Lighting device with multi-chip light emitters, solid state light emitter support members and lighting elements |
WO2011096585A1 (en) | 2010-02-03 | 2011-08-11 | シチズンホールディングス株式会社 | Led drive circuit |
US20110182056A1 (en) | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US20110215348A1 (en) | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US20110186874A1 (en) | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
US8872445B2 (en) | 2010-02-26 | 2014-10-28 | Citizen Holdings Co., Ltd. | LED driving circuit |
CN102782966B (en) | 2010-03-04 | 2017-04-26 | 加利福尼亚大学董事会 | Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/-15 degrees in the C-direction |
US20110247556A1 (en) | 2010-03-31 | 2011-10-13 | Soraa, Inc. | Tapered Horizontal Growth Chamber |
KR101064020B1 (en) | 2010-04-23 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting device and manufacturing method |
CN102237454A (en) | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | Semiconductor photoelectric element and manufacturing method thereof |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
JP2013526788A (en) | 2010-05-24 | 2013-06-24 | ソラア インコーポレーテッド | Multi-wavelength laser apparatus system and method |
US8350453B2 (en) | 2010-05-25 | 2013-01-08 | Nepes Led Corporation | Lamp cover including a phosphor mixed structure for light emitting device |
US8293551B2 (en) | 2010-06-18 | 2012-10-23 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20110317397A1 (en) | 2010-06-23 | 2011-12-29 | Soraa, Inc. | Quantum dot wavelength conversion for hermetically sealed optical devices |
US20120007102A1 (en) | 2010-07-08 | 2012-01-12 | Soraa, Inc. | High Voltage Device and Method for Optical Devices |
US8210698B2 (en) | 2010-07-28 | 2012-07-03 | Bridgelux, Inc. | Phosphor layer having enhanced thermal conduction and light sources utilizing the phosphor layer |
JP4928652B2 (en) | 2010-08-06 | 2012-05-09 | パナソニック株式会社 | Semiconductor light emitting device |
US8975615B2 (en) | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8040071B2 (en) | 2010-12-14 | 2011-10-18 | O2Micro, Inc. | Circuits and methods for driving light sources |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US8324835B2 (en) | 2011-02-11 | 2012-12-04 | Soraa, Inc. | Modular LED lamp and manufacturing methods |
US8618742B2 (en) | 2011-02-11 | 2013-12-31 | Soraa, Inc. | Illumination source and manufacturing methods |
US8643257B2 (en) | 2011-02-11 | 2014-02-04 | Soraa, Inc. | Illumination source with reduced inner core size |
US8525396B2 (en) | 2011-02-11 | 2013-09-03 | Soraa, Inc. | Illumination source with direct die placement |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
CN202203727U (en) | 2011-08-16 | 2012-04-25 | 惠州元晖光电有限公司 | Optical engine with optical switching array |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
TWI466323B (en) | 2011-11-07 | 2014-12-21 | Ind Tech Res Inst | Light-emitting diode |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
US20130022758A1 (en) | 2012-01-27 | 2013-01-24 | Soraa, Inc. | Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications |
CN104247052B (en) | 2012-03-06 | 2017-05-03 | 天空公司 | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
DE102013007698A1 (en) | 2012-05-04 | 2013-11-07 | Soraa, Inc. | LED lamps with improved light quality |
US8888332B2 (en) | 2012-06-05 | 2014-11-18 | Soraa, Inc. | Accessories for LED lamps |
-
2014
- 2014-04-18 US US14/256,670 patent/US8905588B2/en active Active
-
2016
- 2016-09-09 US US15/261,351 patent/US20160377262A1/en not_active Abandoned
Patent Citations (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100008079A1 (en) * | 2001-12-31 | 2010-01-14 | R.J. Doran & Co Ltd. | Led inspection lamp and led spotlight |
US20040207313A1 (en) * | 2003-04-21 | 2004-10-21 | Sharp Kabushiki Kaisha | LED device and portable telephone, digital camera and LCD apparatus using the same |
US20060138435A1 (en) * | 2003-05-01 | 2006-06-29 | Cree, Inc. | Multiple component solid state white light |
US20040217364A1 (en) * | 2003-05-01 | 2004-11-04 | Cree Lighting Company, Inc. | Multiple component solid state white light |
US20040227465A1 (en) * | 2003-05-17 | 2004-11-18 | Hisham Menkara | Light emitting device having silicate fluorescent phosphor |
US20050023962A1 (en) * | 2003-08-02 | 2005-02-03 | Hisham Menkara | Light emitting device having sulfoselenide fluorescent phosphor |
US20070259206A1 (en) * | 2004-04-27 | 2007-11-08 | Matsushita Electric Industrial Co., Ltd. | Phosphor Composition and Method for Producing the Same, and Light-Emitting Device Using the Same |
US20060072314A1 (en) * | 2004-09-29 | 2006-04-06 | Advanced Optical Technologies, Llc | Optical system using LED coupled with phosphor-doped reflective materials |
US20110057205A1 (en) * | 2004-11-15 | 2011-03-10 | Koninklijke Philips Electronics N.V. | Led with phosphor tile and overmolded phosphor in lens |
US20070223219A1 (en) * | 2005-01-10 | 2007-09-27 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same |
US20090315053A1 (en) * | 2006-08-29 | 2009-12-24 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US8405304B2 (en) * | 2006-12-26 | 2013-03-26 | Seoul Semiconductor Co., Ltd. | Light emtting device |
US20110248296A1 (en) * | 2006-12-26 | 2011-10-13 | Seoul Semiconductor Co., Ltd. | Light emtting device |
US20100207134A1 (en) * | 2007-07-26 | 2010-08-19 | Kenichiro Tanaka | Led lighting device |
US20090101930A1 (en) * | 2007-10-17 | 2009-04-23 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
US20090108269A1 (en) * | 2007-10-26 | 2009-04-30 | Led Lighting Fixtures, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
US20110102706A1 (en) * | 2008-08-28 | 2011-05-05 | Panasonic Corporation | Semiconductor light emitting device and backlight source, backlight source system, display device and electronic device using the same |
US20100070064A1 (en) * | 2008-09-11 | 2010-03-18 | Advanced Optoelectronic Technology Inc. | Method and system for configuring high cri led |
US8143789B2 (en) * | 2008-12-27 | 2012-03-27 | Fu Zhun Precision Industry (Shen Zhen) Co., Ltd. | Illumination system |
US8106608B2 (en) * | 2009-01-05 | 2012-01-31 | Foxconn Technology Co., Ltd. | Lighting system |
US20100200872A1 (en) * | 2009-01-09 | 2010-08-12 | Jun Takashima | Illumination device having multiple led elements with varying color temperatures |
US20140301062A1 (en) * | 2009-09-18 | 2014-10-09 | Soraa, Inc. | Led lamps with improved quality of light |
US20110180829A1 (en) * | 2010-01-26 | 2011-07-28 | Cho Byoung Gu | Light emitting diode (led) and method of manufacture |
US20220174795A1 (en) * | 2010-02-03 | 2022-06-02 | Ecosense Lighting Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) * | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20140225137A1 (en) * | 2010-02-03 | 2014-08-14 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) * | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) * | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20120043552A1 (en) * | 2010-08-19 | 2012-02-23 | Soraa, Inc. | System and Method for Selected Pump LEDs with Multiple Phosphors |
US20170222100A1 (en) * | 2010-08-19 | 2017-08-03 | Soraa, Inc. | System and method for selected pump leds with multiple phosphors |
US20130207148A1 (en) * | 2010-08-20 | 2013-08-15 | Osram Gmbh | Radiation-emitting component with a converter material, with a thermally conductive contact and method for the production thereof |
US20150167909A1 (en) * | 2012-04-17 | 2015-06-18 | Soraa, Inc. | Providing remote blue phosphors in an led lamp |
US8985794B1 (en) * | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US9761763B2 (en) * | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US20160290573A1 (en) * | 2013-10-28 | 2016-10-06 | Ge Lightig Solutions, L.L.C. | Lamps for enhanced optical brightening and color preference |
US9666773B2 (en) * | 2014-02-11 | 2017-05-30 | Samsung Electronics Co., Ltd. | Light source package and display device including the same |
US20190140146A1 (en) * | 2016-04-29 | 2019-05-09 | Lumileds Llc | High luminance crisp white led light source |
US10632214B2 (en) * | 2016-06-24 | 2020-04-28 | Soraa, Inc. | Bactericidal light source with high quality of light |
US20200178370A1 (en) * | 2018-11-30 | 2020-06-04 | Seoul Semiconductor Co., Ltd. | Lighting apparatus and lighting system including the same |
US20200179712A1 (en) * | 2018-12-07 | 2020-06-11 | Seoul Viosys Co., Ltd. | Led lighting apparatus having sterilizing function |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220174795A1 (en) * | 2010-02-03 | 2022-06-02 | Ecosense Lighting Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20190219234A1 (en) * | 2016-09-12 | 2019-07-18 | Lumileds Llc | Lighting system having reduced melanopic spectral content |
US11230665B2 (en) * | 2016-09-12 | 2022-01-25 | Lumileds Llc | Lighting system having reduced melanopic spectral content |
WO2022005920A1 (en) * | 2020-07-02 | 2022-01-06 | Optonomous Technologies, Inc. | INTEGRATED LiDAR WITH SCANNING PHOSPHOR ILLUMINATION SYSTEM AND METHOD |
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