US20130168714A1 - Light emitting diode package structure - Google Patents
Light emitting diode package structure Download PDFInfo
- Publication number
- US20130168714A1 US20130168714A1 US13/633,878 US201213633878A US2013168714A1 US 20130168714 A1 US20130168714 A1 US 20130168714A1 US 201213633878 A US201213633878 A US 201213633878A US 2013168714 A1 US2013168714 A1 US 2013168714A1
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- United States
- Prior art keywords
- light emitting
- emitting diode
- package structure
- diode package
- disposed
- Prior art date
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- 239000005022 packaging material Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 230000003287 optical effect Effects 0.000 claims abstract description 58
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 239000002245 particle Substances 0.000 claims abstract description 24
- 239000007787 solid Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 74
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000002096 quantum dot Substances 0.000 claims description 11
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229920002050 silicone resin Polymers 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003921 oil Substances 0.000 claims description 5
- 235000019198 oils Nutrition 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000005662 Paraffin oil Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 239000004006 olive oil Substances 0.000 claims description 4
- 235000008390 olive oil Nutrition 0.000 claims description 4
- 239000010702 perfluoropolyether Substances 0.000 claims description 4
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 claims description 4
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 description 6
- 239000003292 glue Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8586—Means for heat extraction or cooling comprising fluids, e.g. heat-pipes
Definitions
- the disclosure relates to a package structure, and particularly relates to a light emitting diode (LED) package structure.
- LED light emitting diode
- a light emitting diode is a light emitting device fabricated by using a compound semiconductor. When a current is applied to the LED, energy mat be released in the form of light through the combination of electron and electron hole, such that the LED can emit light. Since the light emitting phenomenon of LED is not caused by heating or discharging, the lifespan of LED may be more than 100,000 hours, and idling time is saved. In addition, LED has the advantages of high response speed, low power consumption, low pollution, high reliability, being suitable for mass production and so on. Accordingly, LED is widely applied in many fields. In recent years, luminescence efficiency of LED has been constantly improved. Consequently, fluorescent lamps and incandescent bulbs are gradually replaced with LED in some areas, such as scanner light source which requires high speed response, back or front light source of liquid crystal display (LCD), automobile dashboard illumination, traffic signs, and general illumination devices.
- LCD liquid crystal display
- the color of the light emitted by the conventional LED is changed through conversion of the phosphor mixed with silicone (for example, the light generated by blue light LED irradiates yellow phosphor to generate white light).
- silicone has favorable heat resistance and reliability when not mixed with phosphor.
- the poor heat resistance of phosphor glue may seriously affect the reliability of the LED package structure. Therefore, it is a very important issue to develop a more suitable LED package material and structure for improving the reliability of LED light source module.
- the disclosure provides a light emitting diode package structure, which may improve the poor heat resistance of the phosphor glue material used in the conventional light emitting diode package structure and may enhance the reliability of a light emitting diode light source module.
- the disclosure provides a light emitting diode package structure, including a substrate, a seal assembly, an optical element, at least one light emitting diode chip, and a packaging material layer.
- the seal assembly is disposed on the substrate.
- the optical element is disposed on the seal assembly, and an enclosed space is formed between the optical element, the seal assembly, and the substrate.
- the light emitting diode chip is disposed on the substrate and located in the enclosed space.
- the packaging material layer is located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa ⁇ s.
- the disclosure further provides a light emitting diode package structure, which includes a substrate, an optical element, at least one light emitting diode chip, and a packaging material layer.
- the substrate has a groove, and the light emitting diode chip is disposed on the substrate and located in the groove.
- the optical element is disposed on the substrate and encloses the groove, so as to form an enclosed space between the optical element and the substrate.
- the packaging material layer is located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa ⁇ s.
- FIG. 1 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 2 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 3 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 4 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 5 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 6A illustrates a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 6B is a schematic cross-sectional view of a light emitting diode package structure according to another embodiment of the disclosure.
- FIG. 7 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 8 illustrates a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 9 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- FIG. 1 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- a light emitting diode package structure 10 of the disclosure includes a substrate 100 , a seal assembly 102 , an optical element 104 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the substrate 100 is a Al 2 O 3 substrate, a AlN substrate, a copper substrate, an aluminum substrate, a ceramic substrate, etc., for example.
- the seal assembly 102 is disposed on the substrate 100 .
- the seal assembly 102 may be connected to a surface of the substrate 100 in the form of a barricade.
- a material of the seal assembly 102 is metal, plastic, alloy, wherein the alloy is kovar, for example.
- the optical element 104 is disposed on the seal assembly 102 , and an enclosed space S is formed between the optical element 104 , the seal assembly 102 , and the substrate 100 .
- the optical element 104 has a curved convex surface 104 a and a plane 104 b , and the plane 104 b is disposed on the seal assembly 102 and faces the substrate 100 , so as to form the enclosed space S.
- the optical element 104 may have other shapes, such as a planar plate shape.
- the optical element 104 is a lens, for example.
- the optical element 104 is formed of a material with favorable light transmittance, such as glass, epoxy resin, or transparent plastic.
- the transparent plastic is polypropylene, polyethylene, cyclic olefin copolymer, polymethylpentenes, hydrogenated cyclo-olefin polymers, or amorphous cyclo-olefin copolymers, for example.
- the light emitting diode chip 106 is disposed on the substrate 100 and located in the enclosed space S. According to an embodiment, the light emitting diode chip 106 may be a high-power light emitting diode chip, which has a light emitting power more than 1 W.
- the packaging material layer 108 is located in the enclosed space S.
- the packaging material layer 108 is disposed on an upper surface 106 a of the light emitting diode chip 106 and covers all exposed surfaces of the light emitting diode chip 106 .
- the packaging material layer 108 includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa ⁇ s.
- the liquid with high viscosity is for example at least one selected from silicon oil, paraffin oil, olive oil, propylene carbonate, and perfluoropolyether solution.
- the disclosure is not limited thereto.
- the solid particles are phosphor, TiO 2 , ZrO 2 , or Quantum Dot (QD), for example.
- the phosphor can be a single phosphor or a mixture of multiple phosphors.
- the Quantum Dot is a particle, such as ZnCdS QD or ZnCdSe QD, which has the characteristic of electroluminescence or light-luminescence and can be applied in the light emitting diode to achieve the properties of nearly continuous spectrum and high color rendering, etc.
- the disclosure is not limited to any particular combination of the liquid with high viscosity and the solid particles.
- phosphor may be mixed with silicon oil and applied onto the light emitting diode chip 106 to cover the light emitting diode chip 106 by screen printing or barricade. Based on the above, a color of the light emitted by the light emitting diode chip 106 can be converted through the selected phosphor. Since the phosphor is mixed with the liquid with high viscosity, not with silicone, the use of phosphor glue does not cause poor heat resistance even when applied to the high-power light emitting diode chip.
- the filling material 110 fills the enclosed space S.
- the filling material 110 is a liquid with favorable thermal conductivity, which is more than 0.55 W/m ⁇ K, for example.
- the filling material 110 is preferably fluid at room temperature, and the viscosity of the filling material 110 is less than the viscosity of the packaging material layer 108 .
- the filling material 110 is deionized water, electrolyzed water, or Fluorinert, for example. It is noted that, since the materials used for the filling material 110 and the packaging material layer 108 may be hydrophilic and lipophilic respectively, the filling material 110 and the packaging material layer 108 are not dissolvable to each other and can achieve liquid packaging.
- the filling material 110 of the disclosure is not limited to a liquid filling material.
- the filling material 110 can be air, silicone, or epoxy resin, for example.
- air i.e. so-called hermetic packaging
- the packaging material layer 108 may remain in liquid state so as to form a liquid package structure.
- silicone or epoxy resin may be for example used as the filling material 110 to fill the enclosed space S and cover the packaging material layer 108 . After the silicone or epoxy resin is baked, the mixture of the liquid with high viscosity and the solid particles in the packaging material layer 108 may remain in liquid state so as to form the light emitting diode package structure in an embodiment of the disclosure.
- the light emitting diode package structure is formed with better stability and heat resistance by mixing the stable and heat-resistant liquid with high viscosity and solid particles in the packaging material layer and selectively using the filling material that is not dissolvable to the packaging material layer. Accordingly, the problem of poor heat resistance of the phosphor glue used in the conventional package structure is improved, and the reliability of the light emitting diode light source module may be further enhanced. Moreover, since the disclosure uses the liquid with higher viscosity in the packaging material layer, the solid particles are uniformly distributed in the liquid with high viscosity, which prevents the problem that the solid particles having larger weight may deposit or be non-uniformly distributed due to a shake. Because the filling material 110 and the packaging material layer 108 are not dissolvable to each other, when the light emitting diode package structure 10 is shaken or vibrated, the packaging material layer 108 does not shift in position and provides better stability.
- FIG. 2 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 20 of the disclosure includes a substrate 100 , a seal assembly 102 , an optical element 104 , at least one light emitting diode chip 106 , and a packaging material layer 108 .
- the optical element 104 is disposed on the seal assembly 102
- an enclosed space S is formed between the optical element 104 , the seal assembly 102 , and the substrate 100 .
- the light emitting diode chip 106 is disposed on the substrate 100 and located in the enclosed space S.
- the packaging material layer 108 is located in the enclosed space S, covers the light emitting diode chip 106 , and fills the enclosed space S.
- the light emitting diode package structure 20 of this embodiment is similar to the light emitting diode package structure 10 of FIG. 1 , and a difference lies in that: the light emitting diode package structure 20 of this embodiment does not include the filling material 110 .
- the packaging material layer 108 is located in the enclosed space S and disposed on the upper surface 106 a of the light emitting diode chip 106 .
- the packaging material layer 108 covers the light emitting diode chip 106 and fills the enclosed space S.
- the packaging material layer 108 fills the enclosed space S, and thereby achieves liquid packaging.
- the packaging material layer 108 includes the stable and heat-resistant liquid with high viscosity and solid particles, the light emitting diode package structure formed based on the above has better stability and heat resistance, and thus the reliability of the light emitting diode light source module may be improved.
- FIG. 3 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 30 of the disclosure includes a substrate 100 , a seal assembly 102 , an optical element 104 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the optical element 104 is disposed on the seal assembly 102
- an enclosed space S is formed between the optical element 104 , the seal assembly 102 , and the substrate 100 .
- the light emitting diode chip 106 is disposed on the substrate 100 and located in the enclosed space S.
- the light emitting diode package structure 30 of this embodiment is similar to the light emitting diode package structure 10 of FIG. 1 , and a difference lies in that: although the packaging material layer 108 of this embodiment is disposed on the upper surface 106 a of the light emitting diode chip 106 , the packaging material layer 108 does not directly contact the light emitting diode chip 106 . More specifically, as shown in FIG. 3 , the packaging material layer 108 is disposed on a plane 104 b of the optical element 104 and located in the enclosed space S. Moreover, the packaging material layer 108 is not in direct contact with the light emitting diode chip 106 .
- the filling material 110 is for example disposed between the packaging material layer 108 and the light emitting diode chip 106 , and fills the enclosed space S.
- the light emitting diode package structure of the disclosure is completed by disposing the packaging material layer 108 and the filling material 110 , which are not dissolvable to each other, to fill the enclosed space S.
- the packaging material layer 108 includes the stable and heat-resistant liquid with high viscosity and solid particles, the light emitting diode package structure formed based on the above has better stability and heat resistance, and thus the reliability of the light emitting diode light source module may be improved.
- FIG. 4 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 40 of the disclosure includes a substrate 100 , a seal assembly 102 , an optical element 104 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the optical element 104 is disposed on the seal assembly 102
- an enclosed space S is formed between the optical element 104 , the seal assembly 102 , and the substrate 100 .
- the light emitting diode chip 106 is disposed on the substrate 100 and located in the enclosed space S.
- the light emitting diode package structure 40 of this embodiment is similar to the light emitting diode package structure 10 of FIG. 1 .
- the light emitting diode chip 106 is for example a light emitting diode chip that has very good forward-direction luminescence efficiency (such as a vertically oriented light emitting diode chip), and the upper surface 106 a is a main light emitting surface of the light emitting diode chip 106 .
- the packaging material layer 108 may cover only the upper surface 106 a and does not cover other surfaces of the light emitting diode chip 106 .
- the filling material 110 fills the enclosed space S. Accordingly, the light generated by the light emitting diode chip 106 can still be emitted from the optical element through the packaging material layer 108 and the filling material 110 .
- the packaging material layer 108 and the filling material 110 can be disposed according to the light emitting properties of different light emitting diode chips, so as to form the light emitting diode package structure.
- the light emitting diode package structure of the disclosure is completed by disposing the packaging material layer 108 and the filling material 110 , which are not dissolvable to each other, to fill the enclosed space S.
- the packaging material layer 108 includes the stable and heat-resistant liquid with high viscosity and solid particles, the light emitting diode package structure formed based on the above has better stability and heat resistance, and thus the reliability of the light source module may be improved.
- FIG. 5 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 50 of the disclosure includes a substrate 100 , a seal assembly 102 , an optical element 104 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the optical element 104 is disposed on the seal assembly 102
- an enclosed space S is formed between the optical element 104 , the seal assembly 102 , and the substrate 100 .
- the light emitting diode chip 106 is disposed on the substrate 100 and located in the enclosed space S.
- the packaging material layer 108 is disposed on the upper surface 106 a of the light emitting diode chip 106 and located in the enclosed space S.
- the packaging material layer 108 covers all exposed surfaces of the light emitting diode chip 106 .
- the filling material 110 fills the enclosed space S.
- the light emitting diode package structure 50 of this embodiment is similar to the light emitting diode package structure 10 of FIG. 1 , and a difference lies in that: the light emitting diode package structure 50 of this embodiment further includes a diffusion layer 112 disposed in the enclosed space S and located on a light emitting path of the light emitting diode chip 106 .
- the diffusion layer 112 is disposed on the plane 104 b of the optical element 104 , for example.
- the disclosure is not limited thereto. Persons with ordinary skill in the art should know that, in fact, the diffusion layer 112 may have various configurations.
- the diffusion layer 112 is formed on the plane 104 b of the optical element 104 by dispensing or spraying, for example.
- a material of the diffusion layer 112 includes nanoparticles of TiO 2 , for example, but the disclosure is not limited thereto.
- the diffusion layer 112 may be disposed to diffuse the light emitted from the light emitting diode chip 106 to pass through the optical element 104 more uniformly, so as to improve the uniformity of the light of the light emitting diode chip 106 .
- Other technical content, materials, and features of the light emitting diode package structure of the embodiment are described in detail in the above embodiments. Hence, a detailed description thereof is omitted hereinafter.
- the liquid light emitting diode package structure mat be formed by combining the packaging material layer with the filling material not dissolvable to the packaging material layer, wherein the packaging material layer is formed by mixing the stable and heat-resistant liquid with high viscosity with solid particles, so as to improve the problem of poor heat resistance that occurs in the conventional packaging material and further enhance the reliability of the light emitting diode light source module.
- FIGS. 6A and 6B illustrate a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 60 includes a substrate 210 , a seal assembly 202 , an optical element 234 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the optical element 234 is disposed on the seal assembly 202 , and an enclosed space S is formed between the optical element 234 , the seal assembly 202 , and the substrate 210 .
- the substrate 210 is a heat dissipation substrate, and a material thereof is copper, for example.
- a shape of the substrate 210 shown in FIG. 6A is merely an example; in fact, the shape of the substrate 210 is not particularly limited.
- the optical element 234 is a curved convex concave lens, for example.
- the disclosure is not limited thereto, and the optical element 234 may have other shapes.
- the seal assembly 202 of this embodiment is a mechanism formed by plastic injection.
- the seal assembly 202 may be consisted of an L-shaped positioning mechanism 202 a and a covering mechanism 202 b .
- the L-shaped positioning mechanism 202 a is for mechanically positioning the optical element 234 and the seal assembly 202 .
- the covering mechanism 202 b covers a sidewall of the substrate 210 during the plastic injection and is combined with the substrate 210 .
- the seal assembly 202 may be one single component or be composed of multiple components as required, as long as the optical element 234 , the seal assembly 202 , and the substrate 210 form the enclosed space S. The disclosure does not limit the number of the components that form the seal assembly 202 .
- the substrate 210 has a groove 210 a , and the light emitting diode chip 106 is disposed in the groove 210 a .
- the packaging material layer 108 is disposed in the groove 210 a and fills the groove 210 a .
- the filling material 110 is disposed in the enclosed space S and fills the enclosed space S.
- the length WA and width WB of the groove 210 a are 1-1.5 times the length Wa and width Wb of the light emitting diode chip 106 .
- the length Wa and width Wb of the light emitting diode chip 106 are 1 mm respectively
- the length WA and width WB of the groove 210 a are 1-1.5 mm respectively.
- the filling material 110 and the optical element 234 of the light emitting diode package structure in this embodiment may also be formed of the same material (such as silicone), and the light emitting diode package structure may be an integral structure formed by mold injection (not shown). That is, in this embodiment, silicone is used as the material of the optical element 234 and the filling material 110 in the enclosed space S, so as to form the light emitting diode package structure.
- the heat dissipation substrate may have various shapes, such as the substrate 230 shown in FIG. 6B .
- the heat dissipation substrate may be used to improve heat dissipation efficiency, so as to further enhance the reliability of the light emitting diode light source module.
- Other technical content, materials, and features of the light emitting diode package structure of the disclosure are described in detail in the above embodiments. Hence, a detailed description thereof is omitted hereinafter.
- FIG. 7 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 70 of the disclosure includes a substrate 200 , an optical element 204 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the substrate 200 has a groove 200 a , and the light emitting diode chip 106 is disposed on the substrate 200 and located in the groove 200 a .
- the optical element 204 is disposed on the substrate 200 and encloses the groove 200 a , so as to form an enclosed space C between the optical element 204 and the substrate 200 .
- the optical element 204 shown in FIG. 7 is for example in a planar plate shape and is disposed on the seal assembly 102 to form the enclosed space C. However, the disclosure is not limited thereto. In other embodiments, the optical element 204 may have other shapes, such as the optical element 104 with the curved convex surface 104 a in FIG. 1 .
- the packaging material layer 108 is located in the enclosed space C and disposed on the upper surface 106 a of the light emitting diode chip 106 to cover all exposed surfaces of the light emitting diode chip 106 .
- the packaging material layer 108 includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa ⁇ s.
- the solid particles are phosphor, TiO 2 , ZrO 2 , or Quantum Dot (QD), for example.
- the liquid with high viscosity is for example at least one selected from silicon oil, paraffin oil, olive oil, propylene carbonate, and perfluoropolyether solution.
- the light emitting diode package structure of this embodiment further includes a filling material 110 that fills the enclosed space C.
- the filling material 110 is a liquid with favorable thermal conductivity, which is more than 0.55 W/m ⁇ K, for example.
- the filling material 110 is preferably fluid at room temperature, and the viscosity of the filling material 110 is less than the viscosity of the packaging material layer 108 .
- the filling material 110 is deionized water, electrolyzed water, or Fluorinert, for example.
- the disclosure is not limited thereto, and the filling material 110 can be silicone or epoxy resin, for example.
- the light emitting diode package structure of this embodiment may selectively include a diffusion layer (not shown) disposed in the enclosed space C and located on a light emitting path of the light emitting diode chip 106 .
- a material of the diffusion layer 112 is nanoparticles of TiO 2 , for example, but the disclosure is not limited thereto.
- the diffusion layer 112 may be disposed to diffuse the light emitted from the light emitting diode chip 106 to pass through the optical element 204 more uniformly, so as to improve the uniformity of the light of the light emitting diode chip 106 .
- FIG. 8 illustrates a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 7 , and descriptions of those elements are omitted.
- a light emitting diode package structure 80 of the disclosure includes a substrate 200 , an optical element 204 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the length WC and width WD of the recess 200 b are 1 mm respectively, and the length Wa and width Wb of the light emitting diode chip 106 are 1-1.5 mm respectively.
- the packaging material layer is disposed in the recess 200 b and fills the recess 200 b .
- the filling material 110 is disposed in the enclosed space C and fills the enclosed space C.
- the packaging material layer 108 is used to cover all exposed surfaces of the light emitting diode chip 106 , and the filling material 110 is used to fill the enclosed space C, for example, the disclosure is not limited thereto.
- the substrate 200 with the groove 200 a depicted in FIG. 7 or the substrate 200 with the recess 200 b depicted in FIG. 8 may be combined with any of the liquid packaging methods described in the above embodiments (shown in FIGS. 1-6B ) to complete the light emitting diode package structure of the disclosure.
- Persons with ordinary skill in the art are able to understand application and variation of the disclosure based on the above embodiments, and thus relevant descriptions will be omitted hereinafter.
- FIG. 9 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure.
- identical reference numerals are used for the same elements as those in FIG. 1 , and descriptions of those elements are omitted.
- a light emitting diode package structure 90 of the disclosure includes a substrate 100 , an optical element 104 , at least one light emitting diode chip 106 , a packaging material layer 108 , and a filling material 110 .
- the light emitting diode package structure 90 of this embodiment is similar to the light emitting diode package structure 10 of FIG. 1 , and a difference lies in that: the light emitting diode package structure 90 of this embodiment further includes an electrode 114 a and an electrode 114 b which are for example disposed on the substrate 100 and located in the enclosed space S, as shown in FIG. 9 .
- a voltage may be applied to the electrodes 114 a and 114 b from outside of the light emitting diode package structure through an electrowetting technique, so as to form an electric field, thereby changing a contact angle of the packaging material layer 108 and the filling material 110 to control a light emitting angle of the light emitting diode and achieve a variable lighting pattern light emitting diode.
- the disclosure is not limited thereto.
- the independent electrodes may be added to any of the configurations of the above embodiments (e.g. FIGS. 1-8 ) for carrying out the electrowetting technique, so as to complete the light emitting diode package structure of the disclosure.
- Persons with ordinary skill in the art are able to understand application and variation of the disclosure based on the above embodiments, and thus relevant descriptions will be omitted hereinafter.
- the light emitting diode package structure of the disclosure may be formed with better stability and heat resistance. More specifically, the packaging material layer used in the light emitting diode package structure of the disclosure is not cured when heated and provides better stability that increases the stability of the light source module. Therefore, even if the packaging material layer is applied to a high-power light emitting diode chip, the conventional problem of poor heat resistance that occurs when phosphor is used as the packaging material can be prevented, and accordingly the reliability of the light emitting diode light source module is further enhanced.
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Abstract
A light emitting diode package structure is provided, including a substrate, a seal assembly, an optical element, at least one light emitting diode chip, and a packaging material layer. The seal assembly is disposed on the substrate. The optical element is disposed on the seal assembly, and an enclosed space is formed between the optical element, the seal assembly, and the substrate. The light emitting diode chip is disposed on the substrate and located in the enclosed space. The packaging material layer is located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s.
Description
- This application claims the priority benefit of Taiwan application serial no. 100149880, filed on Dec. 30, 2011. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
- The disclosure relates to a package structure, and particularly relates to a light emitting diode (LED) package structure.
- A light emitting diode (LED) is a light emitting device fabricated by using a compound semiconductor. When a current is applied to the LED, energy mat be released in the form of light through the combination of electron and electron hole, such that the LED can emit light. Since the light emitting phenomenon of LED is not caused by heating or discharging, the lifespan of LED may be more than 100,000 hours, and idling time is saved. In addition, LED has the advantages of high response speed, low power consumption, low pollution, high reliability, being suitable for mass production and so on. Accordingly, LED is widely applied in many fields. In recent years, luminescence efficiency of LED has been constantly improved. Consequently, fluorescent lamps and incandescent bulbs are gradually replaced with LED in some areas, such as scanner light source which requires high speed response, back or front light source of liquid crystal display (LCD), automobile dashboard illumination, traffic signs, and general illumination devices.
- Generally, the color of the light emitted by the conventional LED is changed through conversion of the phosphor mixed with silicone (for example, the light generated by blue light LED irradiates yellow phosphor to generate white light). Silicone has favorable heat resistance and reliability when not mixed with phosphor. However, when silicone is mixed with phosphor to form a phosphor glue, the poor heat resistance of phosphor glue may seriously affect the reliability of the LED package structure. Therefore, it is a very important issue to develop a more suitable LED package material and structure for improving the reliability of LED light source module.
- Accordingly, the disclosure provides a light emitting diode package structure, which may improve the poor heat resistance of the phosphor glue material used in the conventional light emitting diode package structure and may enhance the reliability of a light emitting diode light source module.
- The disclosure provides a light emitting diode package structure, including a substrate, a seal assembly, an optical element, at least one light emitting diode chip, and a packaging material layer. The seal assembly is disposed on the substrate. The optical element is disposed on the seal assembly, and an enclosed space is formed between the optical element, the seal assembly, and the substrate. The light emitting diode chip is disposed on the substrate and located in the enclosed space. The packaging material layer is located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s.
- The disclosure further provides a light emitting diode package structure, which includes a substrate, an optical element, at least one light emitting diode chip, and a packaging material layer. The substrate has a groove, and the light emitting diode chip is disposed on the substrate and located in the groove. The optical element is disposed on the substrate and encloses the groove, so as to form an enclosed space between the optical element and the substrate. The packaging material layer is located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s.
- Several exemplary embodiments accompanied with figures are described in detail below to further describe the disclosure.
- The accompanying drawings are included to provide further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of the disclosure.
-
FIG. 1 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 2 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 3 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 4 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 5 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 6A illustrates a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 6B is a schematic cross-sectional view of a light emitting diode package structure according to another embodiment of the disclosure. -
FIG. 7 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 8 illustrates a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure. -
FIG. 9 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. - Embodiments of the disclosure will be fully described with reference to the accompanying drawings below. Nevertheless, the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The language used to describe the directions, such as “up” or the like, in the following embodiments simply refers to the directions of the drawings and is regarded in an illustrative rather than in a restrictive sense. It should be understood that, when a layer or component is described as being on another layer or component, it may mean that the layer or component is directly disposed on another layer or component or above another layer or component with a middle layer or component therebetween.
-
FIG. 1 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. Referring toFIG. 1 , a light emittingdiode package structure 10 of the disclosure includes asubstrate 100, aseal assembly 102, anoptical element 104, at least one lightemitting diode chip 106, apackaging material layer 108, and afilling material 110. - The
substrate 100 is a Al2O3 substrate, a AlN substrate, a copper substrate, an aluminum substrate, a ceramic substrate, etc., for example. - The
seal assembly 102 is disposed on thesubstrate 100. In an embodiment, theseal assembly 102 may be connected to a surface of thesubstrate 100 in the form of a barricade. A material of theseal assembly 102 is metal, plastic, alloy, wherein the alloy is kovar, for example. - The
optical element 104 is disposed on theseal assembly 102, and an enclosed space S is formed between theoptical element 104, theseal assembly 102, and thesubstrate 100. Theoptical element 104 has acurved convex surface 104 a and aplane 104 b, and theplane 104 b is disposed on theseal assembly 102 and faces thesubstrate 100, so as to form the enclosed space S. However, the disclosure is not limited thereto. Theoptical element 104 may have other shapes, such as a planar plate shape. Theoptical element 104 is a lens, for example. Moreover, theoptical element 104 is formed of a material with favorable light transmittance, such as glass, epoxy resin, or transparent plastic. Specifically, the transparent plastic is polypropylene, polyethylene, cyclic olefin copolymer, polymethylpentenes, hydrogenated cyclo-olefin polymers, or amorphous cyclo-olefin copolymers, for example. - The light
emitting diode chip 106 is disposed on thesubstrate 100 and located in the enclosed space S. According to an embodiment, the lightemitting diode chip 106 may be a high-power light emitting diode chip, which has a light emitting power more than 1 W. - The
packaging material layer 108 is located in the enclosed space S. In this embodiment, thepackaging material layer 108 is disposed on anupper surface 106 a of the light emittingdiode chip 106 and covers all exposed surfaces of the light emittingdiode chip 106. More specifically, thepackaging material layer 108 includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s. The liquid with high viscosity is for example at least one selected from silicon oil, paraffin oil, olive oil, propylene carbonate, and perfluoropolyether solution. However, the disclosure is not limited thereto. Moreover, the solid particles are phosphor, TiO2, ZrO2, or Quantum Dot (QD), for example. Herein, the phosphor can be a single phosphor or a mixture of multiple phosphors. To be more specific, the Quantum Dot is a particle, such as ZnCdS QD or ZnCdSe QD, which has the characteristic of electroluminescence or light-luminescence and can be applied in the light emitting diode to achieve the properties of nearly continuous spectrum and high color rendering, etc. - It is noted that the disclosure is not limited to any particular combination of the liquid with high viscosity and the solid particles. For instance, when using phosphor as the solid particles, phosphor may be mixed with silicon oil and applied onto the light emitting
diode chip 106 to cover the light emittingdiode chip 106 by screen printing or barricade. Based on the above, a color of the light emitted by the light emittingdiode chip 106 can be converted through the selected phosphor. Since the phosphor is mixed with the liquid with high viscosity, not with silicone, the use of phosphor glue does not cause poor heat resistance even when applied to the high-power light emitting diode chip. - The filling
material 110 fills the enclosed space S. The fillingmaterial 110 is a liquid with favorable thermal conductivity, which is more than 0.55 W/m·K, for example. In addition, the fillingmaterial 110 is preferably fluid at room temperature, and the viscosity of the fillingmaterial 110 is less than the viscosity of thepackaging material layer 108. More specifically, the fillingmaterial 110 is deionized water, electrolyzed water, or Fluorinert, for example. It is noted that, since the materials used for the fillingmaterial 110 and thepackaging material layer 108 may be hydrophilic and lipophilic respectively, the fillingmaterial 110 and thepackaging material layer 108 are not dissolvable to each other and can achieve liquid packaging. - Nevertheless, the filling
material 110 of the disclosure is not limited to a liquid filling material. In other embodiments, the fillingmaterial 110 can be air, silicone, or epoxy resin, for example. For example, when using air as the filling material 110 (i.e. so-called hermetic packaging), because a mixture of the liquid with high viscosity and the solid particles in thepackaging material layer 108 is not dissolvable to air, thepackaging material layer 108 may remain in liquid state so as to form a liquid package structure. - Furthermore, in another embodiment, silicone or epoxy resin may be for example used as the filling
material 110 to fill the enclosed space S and cover thepackaging material layer 108. After the silicone or epoxy resin is baked, the mixture of the liquid with high viscosity and the solid particles in thepackaging material layer 108 may remain in liquid state so as to form the light emitting diode package structure in an embodiment of the disclosure. - As described above, in this embodiment, the light emitting diode package structure is formed with better stability and heat resistance by mixing the stable and heat-resistant liquid with high viscosity and solid particles in the packaging material layer and selectively using the filling material that is not dissolvable to the packaging material layer. Accordingly, the problem of poor heat resistance of the phosphor glue used in the conventional package structure is improved, and the reliability of the light emitting diode light source module may be further enhanced. Moreover, since the disclosure uses the liquid with higher viscosity in the packaging material layer, the solid particles are uniformly distributed in the liquid with high viscosity, which prevents the problem that the solid particles having larger weight may deposit or be non-uniformly distributed due to a shake. Because the filling
material 110 and thepackaging material layer 108 are not dissolvable to each other, when the light emittingdiode package structure 10 is shaken or vibrated, thepackaging material layer 108 does not shift in position and provides better stability. -
FIG. 2 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 2 , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIG. 2 , a light emittingdiode package structure 20 of the disclosure includes asubstrate 100, aseal assembly 102, anoptical element 104, at least one light emittingdiode chip 106, and apackaging material layer 108. Herein, theoptical element 104 is disposed on theseal assembly 102, and an enclosed space S is formed between theoptical element 104, theseal assembly 102, and thesubstrate 100. The light emittingdiode chip 106 is disposed on thesubstrate 100 and located in the enclosed space S. Thepackaging material layer 108 is located in the enclosed space S, covers the light emittingdiode chip 106, and fills the enclosed space S. - It should be noted that, the light emitting
diode package structure 20 of this embodiment is similar to the light emittingdiode package structure 10 ofFIG. 1 , and a difference lies in that: the light emittingdiode package structure 20 of this embodiment does not include the fillingmaterial 110. In addition, thepackaging material layer 108 is located in the enclosed space S and disposed on theupper surface 106 a of the light emittingdiode chip 106. Thepackaging material layer 108 covers the light emittingdiode chip 106 and fills the enclosed space S. - In this embodiment, the
packaging material layer 108 fills the enclosed space S, and thereby achieves liquid packaging. Herein, since thepackaging material layer 108 includes the stable and heat-resistant liquid with high viscosity and solid particles, the light emitting diode package structure formed based on the above has better stability and heat resistance, and thus the reliability of the light emitting diode light source module may be improved. -
FIG. 3 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 3 , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIG. 3 , a light emittingdiode package structure 30 of the disclosure includes asubstrate 100, aseal assembly 102, anoptical element 104, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. Herein, theoptical element 104 is disposed on theseal assembly 102, and an enclosed space S is formed between theoptical element 104, theseal assembly 102, and thesubstrate 100. The light emittingdiode chip 106 is disposed on thesubstrate 100 and located in the enclosed space S. - It should be noted that, the light emitting
diode package structure 30 of this embodiment is similar to the light emittingdiode package structure 10 ofFIG. 1 , and a difference lies in that: although thepackaging material layer 108 of this embodiment is disposed on theupper surface 106 a of the light emittingdiode chip 106, thepackaging material layer 108 does not directly contact the light emittingdiode chip 106. More specifically, as shown inFIG. 3 , thepackaging material layer 108 is disposed on aplane 104 b of theoptical element 104 and located in the enclosed space S. Moreover, thepackaging material layer 108 is not in direct contact with the light emittingdiode chip 106. The fillingmaterial 110 is for example disposed between thepackaging material layer 108 and the light emittingdiode chip 106, and fills the enclosed space S. - In this embodiment, the light emitting diode package structure of the disclosure is completed by disposing the
packaging material layer 108 and the fillingmaterial 110, which are not dissolvable to each other, to fill the enclosed space S. Herein, since thepackaging material layer 108 includes the stable and heat-resistant liquid with high viscosity and solid particles, the light emitting diode package structure formed based on the above has better stability and heat resistance, and thus the reliability of the light emitting diode light source module may be improved. -
FIG. 4 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 4 , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIG. 4 , a light emittingdiode package structure 40 of the disclosure includes asubstrate 100, aseal assembly 102, anoptical element 104, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. Herein, theoptical element 104 is disposed on theseal assembly 102, and an enclosed space S is formed between theoptical element 104, theseal assembly 102, and thesubstrate 100. The light emittingdiode chip 106 is disposed on thesubstrate 100 and located in the enclosed space S. - The light emitting
diode package structure 40 of this embodiment is similar to the light emittingdiode package structure 10 ofFIG. 1 . However, in this embodiment, the light emittingdiode chip 106 is for example a light emitting diode chip that has very good forward-direction luminescence efficiency (such as a vertically oriented light emitting diode chip), and theupper surface 106 a is a main light emitting surface of the light emittingdiode chip 106. In this case, thepackaging material layer 108 may cover only theupper surface 106 a and does not cover other surfaces of the light emittingdiode chip 106. Besides, the fillingmaterial 110 fills the enclosed space S. Accordingly, the light generated by the light emittingdiode chip 106 can still be emitted from the optical element through thepackaging material layer 108 and the fillingmaterial 110. - Therefore, persons having ordinary skill in the art should know that, in the disclosure, the
packaging material layer 108 and the fillingmaterial 110 can be disposed according to the light emitting properties of different light emitting diode chips, so as to form the light emitting diode package structure. - In this embodiment, the light emitting diode package structure of the disclosure is completed by disposing the
packaging material layer 108 and the fillingmaterial 110, which are not dissolvable to each other, to fill the enclosed space S. Herein, since thepackaging material layer 108 includes the stable and heat-resistant liquid with high viscosity and solid particles, the light emitting diode package structure formed based on the above has better stability and heat resistance, and thus the reliability of the light source module may be improved. -
FIG. 5 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 5 , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIG. 5 , a light emittingdiode package structure 50 of the disclosure includes asubstrate 100, aseal assembly 102, anoptical element 104, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. Herein, theoptical element 104 is disposed on theseal assembly 102, and an enclosed space S is formed between theoptical element 104, theseal assembly 102, and thesubstrate 100. The light emittingdiode chip 106 is disposed on thesubstrate 100 and located in the enclosed space S. Thepackaging material layer 108 is disposed on theupper surface 106 a of the light emittingdiode chip 106 and located in the enclosed space S. Moreover, thepackaging material layer 108 covers all exposed surfaces of the light emittingdiode chip 106. Besides, the fillingmaterial 110 fills the enclosed space S. - It should be noted that, the light emitting
diode package structure 50 of this embodiment is similar to the light emittingdiode package structure 10 ofFIG. 1 , and a difference lies in that: the light emittingdiode package structure 50 of this embodiment further includes adiffusion layer 112 disposed in the enclosed space S and located on a light emitting path of the light emittingdiode chip 106. With reference toFIG. 5 , specifically, thediffusion layer 112 is disposed on theplane 104 b of theoptical element 104, for example. However, the disclosure is not limited thereto. Persons with ordinary skill in the art should know that, in fact, thediffusion layer 112 may have various configurations. - The
diffusion layer 112 is formed on theplane 104 b of theoptical element 104 by dispensing or spraying, for example. A material of thediffusion layer 112 includes nanoparticles of TiO2, for example, but the disclosure is not limited thereto. In this embodiment, thediffusion layer 112 may be disposed to diffuse the light emitted from the light emittingdiode chip 106 to pass through theoptical element 104 more uniformly, so as to improve the uniformity of the light of the light emittingdiode chip 106. Other technical content, materials, and features of the light emitting diode package structure of the embodiment are described in detail in the above embodiments. Hence, a detailed description thereof is omitted hereinafter. - As described above, in this embodiment, the liquid light emitting diode package structure mat be formed by combining the packaging material layer with the filling material not dissolvable to the packaging material layer, wherein the packaging material layer is formed by mixing the stable and heat-resistant liquid with high viscosity with solid particles, so as to improve the problem of poor heat resistance that occurs in the conventional packaging material and further enhance the reliability of the light emitting diode light source module.
-
FIGS. 6A and 6B illustrate a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure. InFIGS. 6A and 6B , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIGS. 6A and 6B , a light emittingdiode package structure 60 includes asubstrate 210, aseal assembly 202, anoptical element 234, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. Herein, theoptical element 234 is disposed on theseal assembly 202, and an enclosed space S is formed between theoptical element 234, theseal assembly 202, and thesubstrate 210. - In this embodiment, the
substrate 210 is a heat dissipation substrate, and a material thereof is copper, for example. However, the disclosure is not limited thereto. In addition, a shape of thesubstrate 210 shown inFIG. 6A is merely an example; in fact, the shape of thesubstrate 210 is not particularly limited. - As shown in
FIG. 6A , theoptical element 234 is a curved convex concave lens, for example. However, persons having ordinary skill in the art should know that the disclosure is not limited thereto, and theoptical element 234 may have other shapes. - Moreover, the
seal assembly 202 of this embodiment is a mechanism formed by plastic injection. For example, theseal assembly 202 may be consisted of an L-shapedpositioning mechanism 202 a and acovering mechanism 202 b. The L-shapedpositioning mechanism 202 a is for mechanically positioning theoptical element 234 and theseal assembly 202. Thecovering mechanism 202 b covers a sidewall of thesubstrate 210 during the plastic injection and is combined with thesubstrate 210. However, theseal assembly 202 may be one single component or be composed of multiple components as required, as long as theoptical element 234, theseal assembly 202, and thesubstrate 210 form the enclosed space S. The disclosure does not limit the number of the components that form theseal assembly 202. - It should be noted that, in this embodiment, the
substrate 210 has agroove 210 a, and the light emittingdiode chip 106 is disposed in thegroove 210 a. Moreover, thepackaging material layer 108 is disposed in thegroove 210 a and fills thegroove 210 a. The fillingmaterial 110 is disposed in the enclosed space S and fills the enclosed space S. - Herein, the length WA and width WB of the
groove 210 a are 1-1.5 times the length Wa and width Wb of the light emittingdiode chip 106. For example, the length Wa and width Wb of the light emittingdiode chip 106 are 1 mm respectively, and the length WA and width WB of thegroove 210 a are 1-1.5 mm respectively. - Furthermore, as shown in
FIG. 6B , the fillingmaterial 110 and theoptical element 234 of the light emitting diode package structure in this embodiment may also be formed of the same material (such as silicone), and the light emitting diode package structure may be an integral structure formed by mold injection (not shown). That is, in this embodiment, silicone is used as the material of theoptical element 234 and the fillingmaterial 110 in the enclosed space S, so as to form the light emitting diode package structure. In addition, as described above, the heat dissipation substrate may have various shapes, such as thesubstrate 230 shown inFIG. 6B . - According to this embodiment, the heat dissipation substrate may be used to improve heat dissipation efficiency, so as to further enhance the reliability of the light emitting diode light source module. Other technical content, materials, and features of the light emitting diode package structure of the disclosure are described in detail in the above embodiments. Hence, a detailed description thereof is omitted hereinafter.
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FIG. 7 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 7 , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIG. 7 , a light emittingdiode package structure 70 of the disclosure includes asubstrate 200, anoptical element 204, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. - The
substrate 200 has agroove 200 a, and the light emittingdiode chip 106 is disposed on thesubstrate 200 and located in thegroove 200 a. Theoptical element 204 is disposed on thesubstrate 200 and encloses thegroove 200 a, so as to form an enclosed space C between theoptical element 204 and thesubstrate 200. Theoptical element 204 shown inFIG. 7 is for example in a planar plate shape and is disposed on theseal assembly 102 to form the enclosed space C. However, the disclosure is not limited thereto. In other embodiments, theoptical element 204 may have other shapes, such as theoptical element 104 with the curvedconvex surface 104 a inFIG. 1 . - The
packaging material layer 108 is located in the enclosed space C and disposed on theupper surface 106 a of the light emittingdiode chip 106 to cover all exposed surfaces of the light emittingdiode chip 106. Specifically, thepackaging material layer 108 includes a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s. Herein, the solid particles are phosphor, TiO2, ZrO2, or Quantum Dot (QD), for example. The liquid with high viscosity is for example at least one selected from silicon oil, paraffin oil, olive oil, propylene carbonate, and perfluoropolyether solution. - In addition, the light emitting diode package structure of this embodiment further includes a filling
material 110 that fills the enclosed space C. The fillingmaterial 110 is a liquid with favorable thermal conductivity, which is more than 0.55 W/m·K, for example. Moreover, the fillingmaterial 110 is preferably fluid at room temperature, and the viscosity of the fillingmaterial 110 is less than the viscosity of thepackaging material layer 108. Specifically, the fillingmaterial 110 is deionized water, electrolyzed water, or Fluorinert, for example. However, the disclosure is not limited thereto, and the fillingmaterial 110 can be silicone or epoxy resin, for example. - The light emitting diode package structure of this embodiment may selectively include a diffusion layer (not shown) disposed in the enclosed space C and located on a light emitting path of the light emitting
diode chip 106. A material of thediffusion layer 112 is nanoparticles of TiO2, for example, but the disclosure is not limited thereto. Thediffusion layer 112 may be disposed to diffuse the light emitted from the light emittingdiode chip 106 to pass through theoptical element 204 more uniformly, so as to improve the uniformity of the light of the light emittingdiode chip 106. -
FIG. 8 illustrates a schematic cross-sectional view and a partial top view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 8 , identical reference numerals are used for the same elements as those inFIG. 7 , and descriptions of those elements are omitted. - Referring to
FIG. 8 , a light emittingdiode package structure 80 of the disclosure includes asubstrate 200, anoptical element 204, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. - A difference between the light emitting
diode package structure 80 of this embodiment and the light emittingdiode package structure 70 ofFIG. 7 lies in that: thegroove 200 a has arecess 200 b, and the light emittingdiode chip 106 is disposed in therecess 200 b, wherein the length WC and width WD of therecess 200 b are 1-1.5 times the length Wa and width Wb of the light emittingdiode chip 106 respectively. - For example, the length WC and width WD of the
recess 200 b are 1 mm respectively, and the length Wa and width Wb of the light emittingdiode chip 106 are 1-1.5 mm respectively. In addition, the packaging material layer is disposed in therecess 200 b and fills therecess 200 b. The fillingmaterial 110 is disposed in the enclosed space C and fills the enclosed space C. - Other technical content, materials, and features of the light emitting diode package structure of this embodiment are described in detail in the above embodiments.
- It is worth mentioning that, although in the embodiments of
FIGS. 7-8 , thepackaging material layer 108 is used to cover all exposed surfaces of the light emittingdiode chip 106, and the fillingmaterial 110 is used to fill the enclosed space C, for example, the disclosure is not limited thereto. In other embodiments, thesubstrate 200 with thegroove 200 a depicted inFIG. 7 or thesubstrate 200 with therecess 200 b depicted inFIG. 8 may be combined with any of the liquid packaging methods described in the above embodiments (shown inFIGS. 1-6B ) to complete the light emitting diode package structure of the disclosure. Persons with ordinary skill in the art are able to understand application and variation of the disclosure based on the above embodiments, and thus relevant descriptions will be omitted hereinafter. -
FIG. 9 is a schematic cross-sectional view of a light emitting diode package structure according to an embodiment of the disclosure. InFIG. 9 , identical reference numerals are used for the same elements as those inFIG. 1 , and descriptions of those elements are omitted. - Referring to
FIG. 9 , a light emittingdiode package structure 90 of the disclosure includes asubstrate 100, anoptical element 104, at least one light emittingdiode chip 106, apackaging material layer 108, and a fillingmaterial 110. - It should be noted that, the light emitting
diode package structure 90 of this embodiment is similar to the light emittingdiode package structure 10 ofFIG. 1 , and a difference lies in that: the light emittingdiode package structure 90 of this embodiment further includes anelectrode 114 a and anelectrode 114 b which are for example disposed on thesubstrate 100 and located in the enclosed space S, as shown inFIG. 9 . It is worth noting that, in this embodiment, a voltage may be applied to theelectrodes packaging material layer 108 and the fillingmaterial 110 to control a light emitting angle of the light emitting diode and achieve a variable lighting pattern light emitting diode. - Furthermore, although in the embodiment of
FIG. 9 , two independent electrodes are added to the light emittingdiode package structure 10 ofFIG. 1 , for example; the disclosure, however, is not limited thereto. The independent electrodes may be added to any of the configurations of the above embodiments (e.g.FIGS. 1-8 ) for carrying out the electrowetting technique, so as to complete the light emitting diode package structure of the disclosure. Persons with ordinary skill in the art are able to understand application and variation of the disclosure based on the above embodiments, and thus relevant descriptions will be omitted hereinafter. - To conclude the above, by mixing the stable and heat-resistant liquid with high viscosity and solid particles in the packaging material layer and selectively using the filling material that is not dissolvable to the packaging material layer, the light emitting diode package structure of the disclosure may be formed with better stability and heat resistance. More specifically, the packaging material layer used in the light emitting diode package structure of the disclosure is not cured when heated and provides better stability that increases the stability of the light source module. Therefore, even if the packaging material layer is applied to a high-power light emitting diode chip, the conventional problem of poor heat resistance that occurs when phosphor is used as the packaging material can be prevented, and accordingly the reliability of the light emitting diode light source module is further enhanced.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the disclosure covers modifications and variations of this disclosure provided that they fall within the scope of the following claims and their equivalents.
Claims (30)
1. A light emitting diode package structure, comprising:
a substrate;
a seal assembly disposed on the substrate;
an optical element disposed on the seal assembly, wherein an enclosed space is formed between the optical element, the seal assembly, and the substrate;
at least one light emitting diode chip disposed on the substrate and located in the enclosed space; and
a packaging material layer located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer comprises a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s.
2. The light emitting diode package structure of claim 1 , wherein the solid particles comprise phosphor, TiO2, ZrO2, or Quantum Dot (QD).
3. The light emitting diode package structure of claim 1 , wherein the liquid with high viscosity is at least one selected from silicon oil, paraffin oil, olive oil, propylene carbonate, and perfluoropolyether solution.
4. The light emitting diode package structure of claim 1 , wherein the packaging material layer covers the light emitting diode chip and fills the enclosed space.
5. The light emitting diode package structure of claim 1 , further comprising a filling material disposed in the enclosed space, wherein the viscosity of the filling material is less than the viscosity of the packaging material layer.
6. The light emitting diode package structure of claim 5 , wherein the packaging material layer covers all exposed surfaces of the light emitting diode chip, and the filling material fills the enclosed space.
7. The light emitting diode package structure of claim 5 , wherein the packaging material layer is disposed on a plane of the optical element, and the filling material is disposed between the packaging material layer and the light emitting diode chip.
8. The light emitting diode package structure of claim 5 , wherein the packaging material layer covers only the upper surface of the light emitting diode chip, and the filling material fills the enclosed space.
9. The light emitting diode package structure of claim 5 , wherein the thermal conductivity of the filling material is more than 0.55 W/m·K.
10. The light emitting diode package structure of claim 5 , wherein the filling material comprises deionized water, electrolyzed water, Fluorinert, air, silicone, or epoxy resin.
11. The light emitting diode package structure of claim 1 , further comprising a diffusion layer disposed in the enclosed space and located on a light emitting path of the light emitting diode chip.
12. The light emitting diode package structure of claim 11 , wherein a material of the diffusion layer comprises nanoparticles of TiO2.
13. The light emitting diode package structure of claim 1 , wherein the optical element comprises a curved convex surface and a plane, and the plane is disposed on the seal assembly and faces the substrate.
14. The light emitting diode package structure of claim 1 , wherein the optical element is in a planar plate shape.
15. The light emitting diode package structure of claim 1 , further comprising two electrodes disposed on the substrate and located in the enclosed space.
16. The light emitting diode package structure of claim 1 , wherein the substrate comprises a groove, and the light emitting diode chip is disposed in the groove, wherein the length and width of the groove are 1-1.5 times the length and width of the light emitting diode chip respectively.
17. The light emitting diode package structure of claim 16 , wherein the packaging material layer is disposed in the groove.
18. The light emitting diode package structure of claim 17 , further comprising a filling material disposed in the enclosed space, wherein the viscosity of the filling material is less than the viscosity of the packaging material layer.
19. The light emitting diode package structure of claim 17 , wherein the filling material fills the enclosed space.
20. A light emitting diode package structure, comprising:
a substrate comprising a groove;
at least one light emitting diode chip disposed on the substrate and located in the groove;
an optical element disposed on the substrate and enclosing the groove to form an enclosed space between the optical element and the substrate; and
a packaging material layer located in the enclosed space and at least disposed on an upper surface of the light emitting diode chip, wherein the packaging material layer comprises a liquid with high viscosity and a plurality of solid particles, and the viscosity of the liquid with high viscosity is more than 3000 mPa·s.
21. The light emitting diode package structure of claim 20 , wherein the solid particles comprise phosphor, TiO2, ZrO2, or Quantum Dot (QD).
22. The light emitting diode package structure of claim 20 , wherein the liquid with high viscosity is at least one selected from silicon oil, paraffin oil, olive oil, propylene carbonate, and perfluoropolyether solution.
23. The light emitting diode package structure of claim 20 , wherein the groove comprises a recess, and the light emitting diode chip is located in the recess, wherein the length and width of the recess are 1-1.5 times the length and width of the light emitting diode chip respectively.
24. The light emitting diode package structure of claim 20 , wherein the packaging material layer is disposed in the recess.
25. The light emitting diode package structure of claim 20 , further comprising a filling material disposed in the enclosed space, wherein the viscosity of the filling material is less than the viscosity of the packaging material layer.
26. The light emitting diode package structure of claim 23 , wherein the filling material fills the enclosed space.
27. The light emitting diode package structure of claim 25 , wherein the thermal conductivity of the filling material is more than 0.55 W/m·K.
28. The light emitting diode package structure of claim 25 , wherein the filling material comprises deionized water, electrolyzed water, Fluorinert, air, silicone, or epoxy resin.
29. The light emitting diode package structure of claim 20 , further comprising a diffusion layer disposed in the enclosed space and located on a light emitting path of the light emitting diode chip.
30. The light emitting diode package structure of claim 20 , wherein a material of the diffusion layer comprises nanoparticles of TiO2.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201161451602P | 2011-03-11 | 2011-03-11 | |
TW100149880 | 2011-12-30 | ||
TW100149880A TWI514630B (en) | 2011-03-11 | 2011-12-30 | Light emitting diode package structure |
Publications (1)
Publication Number | Publication Date |
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US20130168714A1 true US20130168714A1 (en) | 2013-07-04 |
Family
ID=47223300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/633,878 Abandoned US20130168714A1 (en) | 2011-03-11 | 2012-10-03 | Light emitting diode package structure |
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US (1) | US20130168714A1 (en) |
TW (2) | TW201238406A (en) |
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WO2015077369A1 (en) * | 2013-11-19 | 2015-05-28 | Qd Vision, Inc. | Light emitting device including quantum dots |
US10627672B2 (en) * | 2015-09-22 | 2020-04-21 | Samsung Electronics Co., Ltd. | LED package, backlight unit and illumination device including same, and liquid crystal display including backlight unit |
CN115207184A (en) * | 2021-04-12 | 2022-10-18 | 博尔博公司 | Light emitting diode package using fluid enclosure |
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KR102712599B1 (en) * | 2017-10-17 | 2024-10-02 | 엘지디스플레이 주식회사 | Luminous body, light emitting film, light emitting diode and light emitting device having the luminous body |
CN109671837B (en) * | 2017-10-17 | 2021-08-10 | 乐金显示有限公司 | Light-emitting body and light-emitting film, light-emitting diode and light-emitting device including the same |
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Also Published As
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TW201238091A (en) | 2012-09-16 |
TW201238406A (en) | 2012-09-16 |
TWI514630B (en) | 2015-12-21 |
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