US20130105932A1 - Method for molecular adhesion bonding at low pressure - Google Patents
Method for molecular adhesion bonding at low pressure Download PDFInfo
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- US20130105932A1 US20130105932A1 US13/718,624 US201213718624A US2013105932A1 US 20130105932 A1 US20130105932 A1 US 20130105932A1 US 201213718624 A US201213718624 A US 201213718624A US 2013105932 A1 US2013105932 A1 US 2013105932A1
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- 230000010070 molecular adhesion Effects 0.000 title claims description 32
- 238000000034 method Methods 0.000 title description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000011165 3D composite Substances 0.000 claims abstract description 10
- 239000002178 crystalline material Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 50
- 239000012212 insulator Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 174
- 239000000758 substrate Substances 0.000 description 72
- 230000000977 initiatory effect Effects 0.000 description 27
- 125000006850 spacer group Chemical group 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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-
- H01L27/14—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/8313—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Definitions
- the present invention relates to a molecular adhesion bonding carried out at low pressure (also referred to as LPB for “Low Pressure Bonding”) between two “wafers”.
- LPB Low Pressure Bonding
- the quality of a structure obtained by low pressure bonding between two wafers is variable.
- the Applicant has observed that bonding carried out between two wafers by molecular adhesion at low pressure, typically at a pressure less than or equal to 1 millibar, is equally likely to give very satisfactory results and poor results in terms of deformations of the wafers, even for wafers coming from the same batch.
- This lack of a reproducible nature of the results after bonding is due to the fact that the propagation of the bonding wave may be initiated during the operations of alignment and progressive contacting of the wafers before carrying out the bonding per se, owing to the low pressure environment in which the wafers are placed and which promotes such initiation.
- multilayer semiconductor structures also referred to as “multilayer semiconductor wafers”
- 3D integration three-dimensional integration
- a first wafer referred to as the final substrate
- second wafer which is bonded by molecular adhesion onto the first wafer and is generally thinned after bonding
- this layer corresponding to the portion of the second wafer in which elements have been formed, for example a plurality of microcomponents.
- Other corresponding elements may optionally also be formed in the first wafer.
- each transferred layer that is to say each wafer comprising the layer, must be positioned on the final substrate (the first wafer on its own or already comprising other transferred layers) with a correct precision in order to comply with alignment with the underlying layer, of the order of 0.3 microns. It may furthermore be necessary to carry out treatments on the layer after its transfer, for example in order to form other microcomponents, in order to uncover microcomponents on the surface, in order to produce interconnects, etc., these treatment operations also having to be carried out with very great precision in relation to the components present in the layer.
- misalignment phenomenon also referred to as “overlay”, described with reference to FIG. 5 , is manifested in the form of defects of the order of 50 nm, much less than the alignment precision of the substrates at the moment of molecular bonding.
- FIG. 5 illustrates a three-dimensional structure 400 obtained by molecular adhesion bonding at low pressure between a first wafer or initial substrate 410 , on which a first series of microcomponents 411 to 419 is formed by photolithography by means of a mask making it possible to define the regions for formation of the patterns corresponding to the microcomponents to be produced, and a second wafer or final substrate 420 .
- the initial substrate 410 has been thinned after bonding in order to remove a portion of material present above the layer of microcomponents 411 to 419 , and a second layer of microcomponents 421 to 429 has been formed level with the exposed surface of the initial substrate 410 .
- offsets occur between certain of the microcomponents 411 to 419 on the one hand, and 421 to 429 on the other hand, such as the offsets ⁇ 11 , ⁇ 22 , ⁇ 33 , ⁇ 44 indicated in FIG. 5 (respectively corresponding to the offsets observed between the pairs of microcomponents 411 / 421 , 412 / 422 , 413 / 423 and 414 / 424 ).
- This phenomenon of misalignment (also referred to as “overlay”) between the two layers of microcomponents may give rise to short circuits, distortions in the stack or connection defects between the microcomponents of the two layers.
- overlay also referred to as “overlay”
- the transferred microcomponents are imagers formed by pixels and the post-transfer treatment steps are intended to form color filters on each of these pixels, a loss of the coloration function is observed for some of these pixels.
- This misalignment phenomenon also leads to a reduction of the quality and the value of the multilayer semiconductor wafers being fabricated.
- the impact of this phenomenon is becoming more and more critical because of the incessantly increasing requirements in respect of the miniaturization of the microcomponents and their integration density per layer.
- the present invention relates to a method for bonding at least a first wafer and a second wafer by molecular adhesion.
- This method comprises providing a first wafer, providing a second wafer, wherein the first wafer may be a silicon-on-insulator (SOI) type structure or substrate, placing the first wafer and the second wafer in an environment having a first pressure (P 1 ) greater than a predetermined threshold pressure, aligning the first wafer and the second wafer, bringing the first wafer and the second wafer into contact, reducing the pressure within the environment to a second pressure (P 2 ) below the threshold pressure, and initiating the propagation of a bonding wave between the first and second wafer, wherein propagation of the bonding wave is initiated by applying a mechanical pressure point to one of the two wafers, wherein the pressure applied by the mechanical pressure point onto one of the two wafers lies between 1 MPa and 33.3 MPa.
- P 1 first pressure
- P 2 second pressure
- the initiation may be carried out using a tool equipped with a stylet, and the mechanical pressure exerted by the stylet onto the wafer may be controlled in order to limit the deformations at the level of the contact point.
- the bonding wave may be initiated by applying a mechanical pressure Pm onto the substrate in proximity to its edge.
- the first pressure (P 1 ) is greater than a predetermined threshold pressure, wherein the predetermined threshold value is between 20 millibar and 5 millibar.
- the first pressure (P 1 ) may be at or above a pressure of about 400 millibar.
- the pressure in the environment is reduce to a second pressure (P 2 ) of less than 1 mbar, so as to spontaneously initiate the bonding wave.
- the method further comprises arranging the first wafer and the second wafer such that the surfaces to be brought into contact are facing one another, while interposing spacer elements to maintain a space between the two wafers, and wherein the wafers are aligned by applying a lateral force to the wafers.
- the method further comprises retracting one of the spacer elements, such that the second wafer descends onto the first wafer, applying a first lateral force by a pusher onto the wafers so as to align the two wafers with respect to one another, wherein the wafers are retained by at least one holding finger, retracting the second and third spacer elements, retracting the pusher to thereby allow the lower face of the second wafer to rest on the upper face of the first wafer, applying a second lateral force by the pusher to the two wafers, and retracting the pusher before initiating the propagation of the bonding wave.
- the first wafer and the second wafer have alignment marks that interact with a holding finger, and further wherein the force exerted by the pusher places the wafers in abutment against at least the holding finger interacting with the alignment marks.
- the wafers are placed in an environment at a second pressure of less than 1 mbar, so as to spontaneously initiate the bonding wave.
- the initiation of a propagation bonding wave comprises the application of a mechanical pressure point on one of the two wafers.
- the present invention also relates to a method for producing a three-dimensional composite structure comprising providing a first wafer, wherein there is a first layer of microcomponents on one face of the first wafer, providing a second wafer, placing the first wafer with microcomponents thereon and the second wafer in an environment having a first pressure (P 1 ) greater than a predetermined threshold pressure, aligning the first wafer and the second wafer, bringing the face of the first wafer comprising the layer of microcomponents into contact with the face of the second wafer, reducing the pressure within the environment to a second pressure (P 2 ) below the threshold pressure, and initiating the propagation of a bonding wave between the first and second wafer.
- P 1 first pressure
- P 2 second pressure
- the method may further comprise forming an oxide layer on the face of the first wafer covering the first layer of microcomponents prior to bonding the first and second wafers.
- the method may also comprise thinning the first wafer, and/or producing a second layer of microcomponents on the face of the first wafer opposite the face having the first layer of microcomponents, wherein at least the first layer of microcomponents on the first wafer may be image sensors.
- the present method makes it possible to limit the inhomogeneous deformations which occur in a wafer or a substrate during its bonding by molecular adhesion onto another wafer or substrate, while preserving the advantages of low pressure bonding.
- the present invention further still relates to a three-dimensional composite structure comprising a wafer and a layer of semiconductor crystalline material bonded on the wafer by molecular adhesion.
- the layer has a first face located in the vicinity of the bonding interface between the layer and the wafer and a second face opposite to the first face.
- the layer of semiconductor crystalline material includes a first series of microcomponents on its first face and a second series of microcomponents on its second face in alignment with the first series of microcomponents.
- the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 100 nm homogeneously over the entire surface of the structure.
- the occurrence of manufacturing defects such as short circuits, distortions or connection defects between the microcomponents of the two series of microcomponents is considerably reduced.
- the first series of microcomponents comprises imagers formed by pixels while the second series of microcomponents comprises color filters intended to be aligned with each pixel, the coloration function can be ensured for all pixels.
- the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 50 nm over at least 50% of the surface of the structure.
- FIG. 1 is a flow chart of the steps of a molecular adhesion bonding method of the invention illustrated in FIGS. 2A to 2I ,
- FIGS. 2A to 2I are schematic views of a molecular adhesion bonding method according to an embodiment of the invention.
- FIGS. 3A to 3D are schematic views showing the production of a three-dimensional structure by using the molecular adhesion bonding method of the present invention.
- FIG. 4 is a flow chart of the steps carried out during the production of the three-dimensional structure illustrated in FIGS. 3A to 3D ,
- FIG. 5 is a schematic view showing a three-dimensional structure after molecular adhesion bonding at low pressure according to the prior art.
- the present invention relates to a method for molecular adhesion bonding between at least a first wafer and a second wafer comprising at least a step of mechanical alignment, a step of bringing the two wafers in contact and a step of initiating the propagation of a bonding wave between the two wafers, in which method, during the said steps of mechanical alignment and bringing the two wafers in contact, the wafers are placed in an environment at a first pressure greater than or equal to a predetermined pressure threshold value, and during the step of initiating the propagation of a bonding wave, the wafers are placed in an environment at a second pressure less than the predetermined pressure threshold value.
- the present invention applies in general to the production of composite structures comprising at least the molecular adhesion bonding of a first substrate or wafer onto a second substrate or wafer.
- molecular adhesion bonding is a technique well known in the art.
- the principle of molecular adhesion bonding is based on bringing two surfaces in direct contact, (i.e.: without using a specific material such as adhesive, wax, braze, etc.).
- Such an operation requires that the surfaces to be bonded are sufficiently smooth, and free of particles or contamination, and that they are brought sufficiently close together in order to make it possible to initiate contact, typically at a distance of less than a few nanometers.
- the attractive forces between the two surfaces are high enough to cause the propagation of a bonding wave which leads to molecular adhesion (bonding induced by all the attractive forces (Van Der Waals forces) of electronic interaction between atoms or molecules of the two surfaces to be bonded).
- the molecular adhesion is achieved by initiating at least one contact point on one wafer in intimate contact with another wafer in order to trigger the propagation of a bonding wave from this contact point.
- a “bonding wave” refers to the front of connection or molecular adhesion which propagates from the initiation point and which corresponds to the spreading of the attractive forces (Van Der Waals forces) from the contact point over the entire surface of intimate contact between the two wafers (bonding interface).
- the contact point is typically initiated by applying a mechanical pressure onto the exposed surface of one of the two wafers. This contact point may nevertheless be generated spontaneously by subjecting the two wafers in contact to a very low pressure, typically less than 5 millibar (mbar) and/or by the action of the force of gravity of one wafer on the other.
- the invention proposes to carry out the operations of mechanical alignment and bringing the wafers in contact by placing them in an environment having a pressure greater than a predetermined pressure threshold value below which there are risks of initiating the propagation of a bonding wave between the two wafers during their handling.
- ambient pressure is intended to mean the pressure naturally prevailing in the bonding chamber, which is to say without using a pumping means, this pressure corresponding to the atmospheric pressure of the environment in which the bonding machine is located.
- the pressure threshold value is less than atmospheric pressure.
- the pressure of the chamber can be reduced below the defined pressure threshold value in order to allow the initiation of the propagation of a bonding wave between the two wafers.
- a first wafer or substrate 20 is placed in a chamber 110 of a bonding machine 100 , the chamber comprising a substrate holder device 40 (Step S 1 ).
- the substrate holder device 40 comprises a support plate 40 a which has planarity defects preferably less than 15 microns.
- the support plate 40 a holds the first wafer 20 , for example by means of an electrostatic or suction system associated with the support plate 40 a or by simple gravity, with a view to assembling it by molecular adhesion with a second wafer or substrate 30 .
- the associated systems for holding the wafer are used in so far as it has been checked that they do not deform the wafer so as not to lead to an increase in the problems of misalignment (“overlay”).
- the bonding machine furthermore comprises a pusher 44 which comprises a head 441 .
- the pusher 44 is displaced between a retracted position in which the head 441 is at a distance from the edges of the wafers 20 and 30 and does not exert a force on the wafers (as illustrated in FIG.
- the wafer 30 is then deposited on the spacer elements 41 to 43 so as to arrange the lower surface or face 32 of the wafer 30 facing the upper surface 22 of the wafer 20 ( FIG. 2B , Step S 2 ).
- the pusher 44 is in its mechanical alignment position and exerts a holding force on the wafers against the fingers 45 and 46 .
- the surfaces 22 and 32 respectively of the wafers 20 and 30 intended to be bonded have been prepared (polishing, cleaning, hydrophobic/hydrophilic treatment, etc.) in order to allow molecular adhesion.
- the spacer element 41 is retracted then the pusher 44 is placed in its retracted position ( FIG. 2C , Step S 3 ), which makes the portion of the wafer 30 present at the location of the spacer element 41 and of the holding finger 45 descend onto the wafer 20 .
- the pusher 44 is again placed in its alignment position in order to keep the wafers aligned ( FIG. 2D , Step S 4 ).
- the spacer elements still present between the two wafers namely in this case the spacer elements 42 and 43 , are retracted while the pusher 44 is still in its position holding the wafers in alignment ( FIG. 2E , Step S 5 ), at which moment the wafers 20 and 30 experience compressive stresses.
- the pusher 44 is then placed in its retracted position in order to relax the stresses applied to the wafers and in order to release the wafer 30 from being held against the fingers 45 and 46 and allow its lower face to rest entirely on the upper face of the wafer 20 ( FIG. 2F , Step S 6 ).
- the pusher 44 is once more placed in its mechanical alignment position in order to ensure that the wafers 20 and 30 are properly aligned before initiation of the propagation of a bonding wave ( FIG. 2G , Step S 7 ).
- the pusher is then placed in its retracted position in order to relax the stresses applied onto the wafers 20 and 30 ( FIG. 2H , Step S 8 ).
- the steps S 1 to S 8 are carried out while placing the wafers in an environment at a first pressure P 1 .
- the steps S 3 to S 8 of alignment and progressively bringing the wafers 20 and 30 in contact are carried out in a chamber 110 in which a pressure prevails which may be either equal to or greater than the ambient pressure, or at a pressure less than the ambient pressure but greater than a predetermined pressure threshold value.
- the chamber comprises partial evacuation means such as a vacuum pump or the like (not represented in FIGS. 2A to 2H ).
- the first pressure P 1 is greater than a predetermined pressure threshold value, for example lying between 20 mbar and 5 mbar, in order to prevent the initiation of the bonding propagation during the steps of mechanical alignment and bringing the wafers in contact. Specifically, from Step S 3 onwards, a portion of the bonding face 31 of the wafer 30 lies in contact with the bonding face 21 of the wafer 20 .
- any contacts or shocks applied to the wafers during their handling in particular during the contact between the pusher and the wafers or when it is retracted so as to make the wafer 30 descend onto the wafer 20 , would be liable to cause the initiation of the propagation of a bonding wave.
- the pressure P 1 of the environment in which the wafers are placed during the steps S 1 to S 8 may or may not be constant (i.e. potentially it is variable during the steps of alignment and contacting).
- the initiation of the propagation of the bonding wave may be initiated spontaneously between the wafers 20 and 30 by lowering the pressure P 2 in the chamber to a very low value, typically less than 5 mbar.
- Step S 9 the pressure of the chamber 110 is lowered to a second pressure P 2 less than the pressure threshold value, namely a pressure typically less than 20 mbar, preferably less than 5 mbar.
- the pressure P 2 of the environment in which the wafers are placed during Step S 9 may or may not be constant (i.e. potentially it is variable during the initiation step).
- the initiation of the propagation of a bonding wave may alternatively be carried out by means of a tool 50 equipped with a stylet 51 making it possible to apply a mechanical contact point onto the wafer 30 .
- the mechanical pressure exerted by the stylet 51 onto the wafer 30 may be controlled in order to limit the deformations at the level of the contact point.
- the tool 50 may comprise a dynamometer 53 .
- the stylet 51 is connected to the dynamometer 53 and comprises a free end 52 with which a mechanical pressure is exerted onto the wafer 30 in order to initiate a contact point between the two wafers 20 and 30 .
- the bearing element and more particularly its end intended to come in contact with the wafer, may be made of or covered with a material such as TEFLON®, silicone or a polymer.
- a material such as TEFLON®, silicone or a polymer.
- the end of the bearing element is made or covered with a sufficiently rigid material in order to be able to apply a pressure in a controlled way.
- too flexible a material could deform and lead to an imprecise contact surface and, consequently, to a lack of precision of the applied pressure.
- too rigid a material could lead to the formation of defects (imprint) on the surface of the wafer.
- the method of the invention is applicable to the assembling of any type of material compatible with molecular bonding, and in particular semiconductor materials such as silicon or germanium, glass, quartz, sapphire etc.
- the wafers to be assembled may in particular have a diameter of 100 mm, 150 mm, 200 mm, 300 mm, or 450 mm.
- the wafers may furthermore comprise microcomponents on the majority of their surface or only on a limited region.
- One particular but not exclusive field of the bonding method of the present invention is that of the production of three-dimensional structures.
- a method for producing a three-dimensional structure by transferring a layer of microcomponents formed on an initial substrate onto a final substrate, according to another embodiment of the invention, will now be described with reference to FIGS. 3A to 3D and FIG. 4 .
- the production of the three-dimensional structure starts with the formation of a first series of microcomponents 110 , which is preferably made of a semiconductor crystalline material, on the surface of an initial wafer or substrate 100 ( FIG. 3A , Step S 10 ).
- the microcomponents 110 may be entire components and/or only a part thereof.
- the initial substrate 100 may be a monolayer structure, for example a layer of silicon, or a multilayer structure such as a structure of the SOI type.
- the microcomponents 110 are formed by photolithography by means of a mask making it possible to define the regions for formation of patterns corresponding to the microcomponents 110 to be produced.
- the initial substrate 100 is held on a substrate holder device 120 .
- the substrate holder device comprises a support plate 120 a on which the initial substrate 100 is pressed, for example by means of an electrostatic or suction system associated with the support plate 120 a.
- the face 101 of the initial substrate 100 comprising the microcomponents 110 is then positioned facing and in contact with a face 201 of a final wafer or substrate 200 (Steps S 20 , FIG. 3B ) with a view to bonding by molecular adhesion.
- the steps S 20 of mechanical alignment and bringing the initial substrate 100 into contact on the final substrate 200 are carried out in an enclosure or chamber (not represented in FIG. 6B ) in which the pressure is greater than 5 mbar, in order to avoid any initiation of bonding wave propagation during these steps.
- it is the final substrate 200 free of microcomponents which is held by the substrate holder device while the initial substrate 100 is brought on top of the final substrate 200 .
- An oxide layer for example of SiO 2 , may furthermore be formed on the face 101 of the initial substrate 100 comprising the microcomponents 110 and located at the vicinity of the bonding interface between the initial substrate 100 and the final substrate 200 and/or on the face 201 of the final substrate 200 intended to be bonded to the face 101 .
- the pressure in the chamber or enclosure (not represented in FIGS. 3A to 3D ) containing the aligned substrates 100 and 200 brought in contact with one another is lowered to a value of less than 5 mbar, which, as explained before permit to initiate a spontaneous bonding between the substrate (Step S 30 , FIG. 3B ).
- a contact point may be also initiated between the two substrates by applying a mechanical pressure Pm onto the substrate 200 , preferably in proximity to its edge.
- the pressure Pm may lie between 1 MPa and 33.3 MPa and be applied onto a bearing surface less than or equal to 1 mm 2 .
- the initiation of the contact point leads to the propagation of a bonding wave over the interface between the initial substrate 100 and the final substrate 200 .
- the two substrates are then bonded together by molecular adhesion over their entire surface in contact (bonding interface).
- a buried layer of microcomponents 110 is thus obtained at the bonding interface between the substrates 100 and 200 .
- the initial substrate 100 is thinned in order to remove a portion of material present above the first series of microcomponents 110 and to form a layer of semiconductor crystalline material 110 a (Step S 40 ).
- the substrate 100 is a substrate of the SOI type
- the buried insulating layer may advantageously be used in order to delimit the thickness of the remaining layer 100 a.
- a composite structure 300 is then obtained, formed by the final substrate 200 and layer 100 a corresponding to the remaining portion of the initial substrate 100 .
- the initial substrate 100 may be thinned in particular by chemical-mechanical polishing (CMP), by chemical etching, or by cleavage or fracture along a weakened plane formed beforehand in the substrate by atom implantation.
- CMP chemical-mechanical polishing
- the next step in the production of the three-dimensional structure consists in forming a second series of microcomponents 140 on the exposed face 102 of the layer 100 a ( FIG. 3D , Step S 50 ).
- the microcomponents 140 may correspond to complementary parts of microcomponents 110 in order to form a finished component and/or to separate components intended to function with the microcomponents 140 .
- a photolithography mask is used which is similar to that used for forming the microcomponents 110 .
- the composite structure 300 formed by the final substrate 200 and the layer 100 a is held on a support plate 130 a of a substrate holder device 130 identical to the device 120 .
- the photolithography mask is then applied to the free surface of the layer 100 a.
- the three-dimensional structure is formed by a stack of layers, each layer having been added by the assembly method of the present invention and each layer being in alignment with the directly adjacent layers.
- the final substrate 200 itself also comprises microcomponents.
- the molecular adhesion bonding method of the invention it has been possible to bond the initial substrate 100 onto the final substrate without deformation or at the very least with a reduction of the deformations such that significant residual alignment offsets of the microcomponents 110 are no longer observed before and after transfer of the initial substrate 100 onto the final substrate 200 . It is thus possible to limit the residual offsets to values of less than 100 nm, homogeneously over the entire surface of the wafer.
- the initial substrate 100 comprising the first series of microcomponents 110 on its face 101 is first positioned on a bonding support. Then a final wafer or substrate 200 is positioned on the initial substrate 100 , its face 201 facing and contacting the face 101 of substrate 100 .
- Spontaneous bonding that is to say without application of an additional mechanical pressure, that has been observed while the pressure is reduced to a value less than 5 mbar, or preferably less than 3 mbar, leads to limit the residual alignments offsets ⁇ rao between the aligned pair of microcomponents of the first and second series of microcomponents 110 and 140 to values of less than 100 nm homogeneously over the entire surface of the wafer, and to value less than 50 nm over at least 50% of the surface of the wafer.
- microcomponents 140 even if they are of very small sizes (for example ⁇ 1 ⁇ m), can then be formed easily in alignment with the microcomponents 110 , even after transfer of the initial substrate. This makes it possible, for example, to interconnect with one another the microcomponents existing in two layers, or on two separate faces of the same layer, by means of metallic connections while minimizing the risks of bad interconnection.
- the bonding method of the present invention consequently makes it possible to limit the phenomena of inhomogeneous deformations of the wafers during their molecular bonding at low pressure.
- the method in the end makes it possible to eliminate the phenomenon of misalignment (“overlay”) during the transfer of one circuit layer onto another layer or onto a support substrate, and to produce multilayer semiconductor wafers of very high quality.
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Abstract
A three-dimensional composite structure that includes a wafer and layer of semiconductor crystalline material bonded thereto, with the layer including first and second series of microcomponents on the first and second faces respectively, with the microcomponents being in alignment such that any residual alignment offsets between the first and second series of microcomponents are less than 100 nm homogeneously over the entire surface of the structure.
Description
- The present invention relates to a molecular adhesion bonding carried out at low pressure (also referred to as LPB for “Low Pressure Bonding”) between two “wafers”.
- In order to obtain a high bonding energy and limit the weakly bonded or non-bonded zones at the periphery of the wafers, it is known to carry out molecular adhesion bonding between two wafers under a reduced pressure or partial vacuum, as described particularly in
document EP 2 200 077 A1. During molecular adhesion bonding at low pressure, the force necessary for initiating the propagation of a bonding wave between two wafers is less than that required at ambient pressure. Furthermore, the lower the pressure, the more rapidly the bonding wave propagates between the wafers. - The quality of a structure obtained by low pressure bonding between two wafers, however, is variable. In fact, the Applicant has observed that bonding carried out between two wafers by molecular adhesion at low pressure, typically at a pressure less than or equal to 1 millibar, is equally likely to give very satisfactory results and poor results in terms of deformations of the wafers, even for wafers coming from the same batch. This lack of a reproducible nature of the results after bonding is due to the fact that the propagation of the bonding wave may be initiated during the operations of alignment and progressive contacting of the wafers before carrying out the bonding per se, owing to the low pressure environment in which the wafers are placed and which promotes such initiation.
- When the propagation of a bonding wave is initiated during these prior steps of handling the wafers, inhomogeneous deformations can occur on one or both wafers.
- These deformations are problematic because they are not controllable and they are irreversible.
- A particular case in which the occurrence of these inhomogeneous deformations is problematic is that of multilayer semiconductor structures (also referred to as “multilayer semiconductor wafers”) produced according to the technology of three-dimensional integration (3D integration) which involves the transfer onto a first wafer, referred to as the final substrate, of at least one layer formed from a second wafer, which is bonded by molecular adhesion onto the first wafer and is generally thinned after bonding, this layer corresponding to the portion of the second wafer in which elements have been formed, for example a plurality of microcomponents. Other corresponding elements may optionally also be formed in the first wafer.
- In the case of a first wafer intended to carry microcomponents, in particular because of the very small size or large number of the microcomponents present on a given layer, each transferred layer, that is to say each wafer comprising the layer, must be positioned on the final substrate (the first wafer on its own or already comprising other transferred layers) with a correct precision in order to comply with alignment with the underlying layer, of the order of 0.3 microns. It may furthermore be necessary to carry out treatments on the layer after its transfer, for example in order to form other microcomponents, in order to uncover microcomponents on the surface, in order to produce interconnects, etc., these treatment operations also having to be carried out with very great precision in relation to the components present in the layer.
- Although molecular adhesion bonding at low pressure makes it possible to obtain a high bonding energy without having to carry out an anneal for reinforcing the bonding interface at high temperature, which could damage the microcomponents, the inhomogeneous deformations generated in the wafers as explained above may make it very difficult or even impossible to form additional microcomponents in alignment with the microcomponents formed before the transfer. This type of problem of inhomogeneous deformations of the bonded wafers exists even outside the scope of 3D integration, that is to say in the case in which the first wafer does not comprise microcomponents or is not intended to carry them later.
- In the particular case of 3D integration, the inhomogeneous deformations resulting from the low pressure molecular bonding subsequently lead to a phenomenon of misalignment of the microcomponents of the various layers. This misalignment phenomenon also referred to as “overlay”, described with reference to
FIG. 5 , is manifested in the form of defects of the order of 50 nm, much less than the alignment precision of the substrates at the moment of molecular bonding. -
FIG. 5 illustrates a three-dimensional structure 400 obtained by molecular adhesion bonding at low pressure between a first wafer orinitial substrate 410, on which a first series ofmicrocomponents 411 to 419 is formed by photolithography by means of a mask making it possible to define the regions for formation of the patterns corresponding to the microcomponents to be produced, and a second wafer orfinal substrate 420. Theinitial substrate 410 has been thinned after bonding in order to remove a portion of material present above the layer ofmicrocomponents 411 to 419, and a second layer ofmicrocomponents 421 to 429 has been formed level with the exposed surface of theinitial substrate 410. - Even when using positioning tools, however, offsets occur between certain of the
microcomponents 411 to 419 on the one hand, and 421 to 429 on the other hand, such as the offsets Δ11, Δ22, Δ33, Δ44 indicated inFIG. 5 (respectively corresponding to the offsets observed between the pairs ofmicrocomponents 411/421, 412/422, 413/423 and 414/424). - These offsets do not result from elementary transformations (translation, rotation or combinations thereof) which could have resulted from imprecise assembly of the substrates. These offsets result from inhomogeneous deformations which occur in the layer coming from the initial substrate during its bonding to the final substrate. Specifically, these deformations lead to nonuniform local displacements level with
certain microcomponents 411 to 419. Also, certain of themicrocomponents 421 to 429 formed on the exposed surface of the substrate after transfer exhibit position variations with respect to thesemicrocomponents 411 to 419, which may be of the order of several hundreds of nanometers, or even one micron. - This phenomenon of misalignment (also referred to as “overlay”) between the two layers of microcomponents may give rise to short circuits, distortions in the stack or connection defects between the microcomponents of the two layers. Thus, in the case in which the transferred microcomponents are imagers formed by pixels and the post-transfer treatment steps are intended to form color filters on each of these pixels, a loss of the coloration function is observed for some of these pixels.
- This misalignment phenomenon also leads to a reduction of the quality and the value of the multilayer semiconductor wafers being fabricated. The impact of this phenomenon is becoming more and more critical because of the incessantly increasing requirements in respect of the miniaturization of the microcomponents and their integration density per layer.
- The present invention relates to a method for bonding at least a first wafer and a second wafer by molecular adhesion. This method comprises providing a first wafer, providing a second wafer, wherein the first wafer may be a silicon-on-insulator (SOI) type structure or substrate, placing the first wafer and the second wafer in an environment having a first pressure (P1) greater than a predetermined threshold pressure, aligning the first wafer and the second wafer, bringing the first wafer and the second wafer into contact, reducing the pressure within the environment to a second pressure (P2) below the threshold pressure, and initiating the propagation of a bonding wave between the first and second wafer, wherein propagation of the bonding wave is initiated by applying a mechanical pressure point to one of the two wafers, wherein the pressure applied by the mechanical pressure point onto one of the two wafers lies between 1 MPa and 33.3 MPa. The initiation may be carried out using a tool equipped with a stylet, and the mechanical pressure exerted by the stylet onto the wafer may be controlled in order to limit the deformations at the level of the contact point. The bonding wave may be initiated by applying a mechanical pressure Pm onto the substrate in proximity to its edge. The first pressure (P1) is greater than a predetermined threshold pressure, wherein the predetermined threshold value is between 20 millibar and 5 millibar. The first pressure (P1) may be at or above a pressure of about 400 millibar.
- The pressure in the environment is reduce to a second pressure (P2) of less than 1 mbar, so as to spontaneously initiate the bonding wave.
- The method further comprises arranging the first wafer and the second wafer such that the surfaces to be brought into contact are facing one another, while interposing spacer elements to maintain a space between the two wafers, and wherein the wafers are aligned by applying a lateral force to the wafers. There are at least three spacer elements interposed between the two wafers to maintain the space between the wafers, and the lateral force is applied to the wafers by a pusher that can move from a retracted position to an alignment position, wherein a head of the pusher abuts the edges of the wafers.
- The method further comprises retracting one of the spacer elements, such that the second wafer descends onto the first wafer, applying a first lateral force by a pusher onto the wafers so as to align the two wafers with respect to one another, wherein the wafers are retained by at least one holding finger, retracting the second and third spacer elements, retracting the pusher to thereby allow the lower face of the second wafer to rest on the upper face of the first wafer, applying a second lateral force by the pusher to the two wafers, and retracting the pusher before initiating the propagation of the bonding wave.
- The first wafer and the second wafer have alignment marks that interact with a holding finger, and further wherein the force exerted by the pusher places the wafers in abutment against at least the holding finger interacting with the alignment marks.
- According to an aspect of the invention, during the initiation of a propagation bonding wave, the wafers are placed in an environment at a second pressure of less than 1 mbar, so as to spontaneously initiate the bonding wave.
- According to another aspect of the invention, the initiation of a propagation bonding wave comprises the application of a mechanical pressure point on one of the two wafers.
- The present invention also relates to a method for producing a three-dimensional composite structure comprising providing a first wafer, wherein there is a first layer of microcomponents on one face of the first wafer, providing a second wafer, placing the first wafer with microcomponents thereon and the second wafer in an environment having a first pressure (P1) greater than a predetermined threshold pressure, aligning the first wafer and the second wafer, bringing the face of the first wafer comprising the layer of microcomponents into contact with the face of the second wafer, reducing the pressure within the environment to a second pressure (P2) below the threshold pressure, and initiating the propagation of a bonding wave between the first and second wafer.
- In another embodiment, the method may further comprise forming an oxide layer on the face of the first wafer covering the first layer of microcomponents prior to bonding the first and second wafers. The method may also comprise thinning the first wafer, and/or producing a second layer of microcomponents on the face of the first wafer opposite the face having the first layer of microcomponents, wherein at least the first layer of microcomponents on the first wafer may be image sensors.
- The present method makes it possible to limit the inhomogeneous deformations which occur in a wafer or a substrate during its bonding by molecular adhesion onto another wafer or substrate, while preserving the advantages of low pressure bonding.
- The present invention further still relates to a three-dimensional composite structure comprising a wafer and a layer of semiconductor crystalline material bonded on the wafer by molecular adhesion. The layer has a first face located in the vicinity of the bonding interface between the layer and the wafer and a second face opposite to the first face. The layer of semiconductor crystalline material includes a first series of microcomponents on its first face and a second series of microcomponents on its second face in alignment with the first series of microcomponents.
- Advantageously, the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 100 nm homogeneously over the entire surface of the structure. With such a limited residual alignment, the occurrence of manufacturing defects such as short circuits, distortions or connection defects between the microcomponents of the two series of microcomponents is considerably reduced. In the case in which the first series of microcomponents comprises imagers formed by pixels while the second series of microcomponents comprises color filters intended to be aligned with each pixel, the coloration function can be ensured for all pixels.
- According to another aspect of the invention, the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 50 nm over at least 50% of the surface of the structure.
- These advantages are preferably provided in a composite structure that has a diameter of 300 mm or more, and at least some of the microcomponents are image sensor.
- Other characteristics and advantages of the invention will become apparent from the following description of particular embodiments of the invention, given by way of nonlimiting examples, with reference to the appended drawings in which:
-
FIG. 1 is a flow chart of the steps of a molecular adhesion bonding method of the invention illustrated inFIGS. 2A to 2I , -
FIGS. 2A to 2I are schematic views of a molecular adhesion bonding method according to an embodiment of the invention, -
FIGS. 3A to 3D are schematic views showing the production of a three-dimensional structure by using the molecular adhesion bonding method of the present invention, -
FIG. 4 is a flow chart of the steps carried out during the production of the three-dimensional structure illustrated inFIGS. 3A to 3D , -
FIG. 5 is a schematic view showing a three-dimensional structure after molecular adhesion bonding at low pressure according to the prior art. - The present invention relates to a method for molecular adhesion bonding between at least a first wafer and a second wafer comprising at least a step of mechanical alignment, a step of bringing the two wafers in contact and a step of initiating the propagation of a bonding wave between the two wafers, in which method, during the said steps of mechanical alignment and bringing the two wafers in contact, the wafers are placed in an environment at a first pressure greater than or equal to a predetermined pressure threshold value, and during the step of initiating the propagation of a bonding wave, the wafers are placed in an environment at a second pressure less than the predetermined pressure threshold value.
- The present invention applies in general to the production of composite structures comprising at least the molecular adhesion bonding of a first substrate or wafer onto a second substrate or wafer.
- Molecular adhesion bonding is a technique well known in the art. The principle of molecular adhesion bonding is based on bringing two surfaces in direct contact, (i.e.: without using a specific material such as adhesive, wax, braze, etc.). Such an operation requires that the surfaces to be bonded are sufficiently smooth, and free of particles or contamination, and that they are brought sufficiently close together in order to make it possible to initiate contact, typically at a distance of less than a few nanometers. In this case, the attractive forces between the two surfaces are high enough to cause the propagation of a bonding wave which leads to molecular adhesion (bonding induced by all the attractive forces (Van Der Waals forces) of electronic interaction between atoms or molecules of the two surfaces to be bonded).
- The molecular adhesion is achieved by initiating at least one contact point on one wafer in intimate contact with another wafer in order to trigger the propagation of a bonding wave from this contact point. Here, a “bonding wave” refers to the front of connection or molecular adhesion which propagates from the initiation point and which corresponds to the spreading of the attractive forces (Van Der Waals forces) from the contact point over the entire surface of intimate contact between the two wafers (bonding interface). The contact point is typically initiated by applying a mechanical pressure onto the exposed surface of one of the two wafers. This contact point may nevertheless be generated spontaneously by subjecting the two wafers in contact to a very low pressure, typically less than 5 millibar (mbar) and/or by the action of the force of gravity of one wafer on the other.
- Although molecular adhesion bonding at low pressure makes it possible to improve the quality of the bonding, the Applicant has observed that if the bonding, and more precisely the propagation of a bonding wave, is initiated during the phase of mechanical alignment and bringing the wafers in contact, inhomogeneous deformations can be produced in the wafers.
- To this end, the invention proposes to carry out the operations of mechanical alignment and bringing the wafers in contact by placing them in an environment having a pressure greater than a predetermined pressure threshold value below which there are risks of initiating the propagation of a bonding wave between the two wafers during their handling.
- The term “ambient pressure” is intended to mean the pressure naturally prevailing in the bonding chamber, which is to say without using a pumping means, this pressure corresponding to the atmospheric pressure of the environment in which the bonding machine is located. The pressure threshold value is less than atmospheric pressure.
- Once these operations have been carried out, the pressure of the chamber can be reduced below the defined pressure threshold value in order to allow the initiation of the propagation of a bonding wave between the two wafers.
- An example of molecular adhesion bonding between two wafers according to an embodiment of the method of the invention will now be described with reference to
FIGS. 1 and 2A to 2I. - In
FIG. 2A , a first wafer orsubstrate 20 is placed in achamber 110 of abonding machine 100, the chamber comprising a substrate holder device 40 (Step S1). Thesubstrate holder device 40 comprises asupport plate 40 a which has planarity defects preferably less than 15 microns. Thesupport plate 40 a holds thefirst wafer 20, for example by means of an electrostatic or suction system associated with thesupport plate 40 a or by simple gravity, with a view to assembling it by molecular adhesion with a second wafer orsubstrate 30. The associated systems for holding the wafer (electrostatic or by suction) are used in so far as it has been checked that they do not deform the wafer so as not to lead to an increase in the problems of misalignment (“overlay”). - Once the
wafer 20 is held on the support plate, threespacer elements 41 to 43 intended to temporarily prevent contact between the two wafers are put in position. The bonding machine furthermore comprises apusher 44 which comprises ahead 441. Thepusher 44 is displaced between a retracted position in which thehead 441 is at a distance from the edges of thewafers FIG. 2A ), and a mechanical alignment position in which thehead 441 abuts against the edges of thewafers fingers finger 45 being intended to interact with alignment marks made in the form of “notches” 21 and 31 respectively in thewafers 20 and 30 (as illustrated inFIG. 2B ). In its alignment position, thehead 441 of thepusher 44 exerts a thrust against the wafers allowing them to be placed in abutment against the holdingfingers - The
wafer 30 is then deposited on thespacer elements 41 to 43 so as to arrange the lower surface or face 32 of thewafer 30 facing theupper surface 22 of the wafer 20 (FIG. 2B , Step S2). At this moment, thepusher 44 is in its mechanical alignment position and exerts a holding force on the wafers against thefingers - In a well-known fashion, the
surfaces wafers - During the subsequent operation, the
spacer element 41 is retracted then thepusher 44 is placed in its retracted position (FIG. 2C , Step S3), which makes the portion of thewafer 30 present at the location of thespacer element 41 and of the holdingfinger 45 descend onto thewafer 20. - The
pusher 44 is again placed in its alignment position in order to keep the wafers aligned (FIG. 2D , Step S4). The spacer elements still present between the two wafers, namely in this case thespacer elements pusher 44 is still in its position holding the wafers in alignment (FIG. 2E , Step S5), at which moment thewafers pusher 44 is then placed in its retracted position in order to relax the stresses applied to the wafers and in order to release thewafer 30 from being held against thefingers FIG. 2F , Step S6). - The
pusher 44 is once more placed in its mechanical alignment position in order to ensure that thewafers FIG. 2G , Step S7). The pusher is then placed in its retracted position in order to relax the stresses applied onto thewafers 20 and 30 (FIG. 2H , Step S8). - According to the invention, the steps S1 to S8, are carried out while placing the wafers in an environment at a first pressure P1. To this end, as illustrated in
FIGS. 2A to 2H , the steps S3 to S8 of alignment and progressively bringing thewafers chamber 110 in which a pressure prevails which may be either equal to or greater than the ambient pressure, or at a pressure less than the ambient pressure but greater than a predetermined pressure threshold value. In the latter case, the chamber comprises partial evacuation means such as a vacuum pump or the like (not represented inFIGS. 2A to 2H ). - More precisely, and as explained above, the first pressure P1 is greater than a predetermined pressure threshold value, for example lying between 20 mbar and 5 mbar, in order to prevent the initiation of the bonding propagation during the steps of mechanical alignment and bringing the wafers in contact. Specifically, from Step S3 onwards, a portion of the
bonding face 31 of thewafer 30 lies in contact with thebonding face 21 of thewafer 20. Consequently, from this moment on and if the wafers were to be placed in an environment whose pressure is less than the pressure threshold value, any contacts or shocks applied to the wafers during their handling, in particular during the contact between the pusher and the wafers or when it is retracted so as to make thewafer 30 descend onto thewafer 20, would be liable to cause the initiation of the propagation of a bonding wave. - By resorting to a pressure P1 above the threshold value, at this stage of the method it is possible to avoid triggering the propagation of a bonding wave which could give rise to inhomogeneous deformations in the wafers and subsequent phenomena of misalignment (“overlay”). The pressure P1 of the environment in which the wafers are placed during the steps S1 to S8 may or may not be constant (i.e. potentially it is variable during the steps of alignment and contacting). The initiation of the propagation of the bonding wave may be initiated spontaneously between the
wafers - After the steps of mechanical alignment and bringing the wafers in contact, the molecular adhesion bonding is carried out (Step S9). To this end, the pressure of the
chamber 110 is lowered to a second pressure P2 less than the pressure threshold value, namely a pressure typically less than 20 mbar, preferably less than 5 mbar. - The pressure P2 of the environment in which the wafers are placed during Step S9 may or may not be constant (i.e. potentially it is variable during the initiation step). As illustrated in
FIG. 2I , the initiation of the propagation of a bonding wave may alternatively be carried out by means of atool 50 equipped with astylet 51 making it possible to apply a mechanical contact point onto thewafer 30. Advantageously, if desired, the mechanical pressure exerted by thestylet 51 onto thewafer 30 may be controlled in order to limit the deformations at the level of the contact point. As illustrated very schematically inFIG. 2I , thetool 50 may comprise adynamometer 53. Thestylet 51 is connected to thedynamometer 53 and comprises afree end 52 with which a mechanical pressure is exerted onto thewafer 30 in order to initiate a contact point between the twowafers contact 52 a of thetool 50 with thewafer 30, it is possible to apply a mechanical pressure of between 1 MPa and 33.3 MPa by controlling the bearing force F exerted by the tool onto the wafer (bearing force =mechanical pressure x bearing surface). By thus limiting the pressure applied onto one of the two substrates during the initiation of a contact point, the inhomogeneous deformations generated in the wafer are reduced while carrying out molecular adhesion bonding on all of the surfaces of the two wafers in contact. The bearing force exerted by theend 52 onto thewafer 30 is monitored by means of thedynamometer 53. - The bearing element, and more particularly its end intended to come in contact with the wafer, may be made of or covered with a material such as TEFLON®, silicone or a polymer. In general, the end of the bearing element is made or covered with a sufficiently rigid material in order to be able to apply a pressure in a controlled way. Specifically, too flexible a material could deform and lead to an imprecise contact surface and, consequently, to a lack of precision of the applied pressure. Furthermore, too rigid a material could lead to the formation of defects (imprint) on the surface of the wafer.
- It is furthermore possible to raise the pressure again in a transient phase between the steps of mechanical alignment and bringing the wafers in contact and the step of initiating the propagation of a bonding wave.
- The method of the invention is applicable to the assembling of any type of material compatible with molecular bonding, and in particular semiconductor materials such as silicon or germanium, glass, quartz, sapphire etc. The wafers to be assembled may in particular have a diameter of 100 mm, 150 mm, 200 mm, 300 mm, or 450 mm. The wafers may furthermore comprise microcomponents on the majority of their surface or only on a limited region.
- One particular but not exclusive field of the bonding method of the present invention is that of the production of three-dimensional structures.
- A method for producing a three-dimensional structure by transferring a layer of microcomponents formed on an initial substrate onto a final substrate, according to another embodiment of the invention, will now be described with reference to
FIGS. 3A to 3D andFIG. 4 . - The production of the three-dimensional structure starts with the formation of a first series of
microcomponents 110, which is preferably made of a semiconductor crystalline material, on the surface of an initial wafer or substrate 100 (FIG. 3A , Step S10). Themicrocomponents 110 may be entire components and/or only a part thereof. Theinitial substrate 100 may be a monolayer structure, for example a layer of silicon, or a multilayer structure such as a structure of the SOI type. Themicrocomponents 110 are formed by photolithography by means of a mask making it possible to define the regions for formation of patterns corresponding to themicrocomponents 110 to be produced. During the formation of themicrocomponents 110 by photolithography, theinitial substrate 100 is held on asubstrate holder device 120. The substrate holder device comprises asupport plate 120 a on which theinitial substrate 100 is pressed, for example by means of an electrostatic or suction system associated with thesupport plate 120 a. - The
face 101 of theinitial substrate 100 comprising themicrocomponents 110 is then positioned facing and in contact with a face 201 of a final wafer or substrate 200 (Steps S20,FIG. 3B ) with a view to bonding by molecular adhesion. According to the invention, the steps S20 of mechanical alignment and bringing theinitial substrate 100 into contact on thefinal substrate 200, such as the steps S3 to S8 described above, are carried out in an enclosure or chamber (not represented inFIG. 6B ) in which the pressure is greater than 5 mbar, in order to avoid any initiation of bonding wave propagation during these steps. According to an alternative embodiment, it is thefinal substrate 200 free of microcomponents which is held by the substrate holder device while theinitial substrate 100 is brought on top of thefinal substrate 200. - An oxide layer, for example of SiO2, may furthermore be formed on the
face 101 of theinitial substrate 100 comprising themicrocomponents 110 and located at the vicinity of the bonding interface between theinitial substrate 100 and thefinal substrate 200 and/or on the face 201 of thefinal substrate 200 intended to be bonded to theface 101. - According to the invention, the pressure in the chamber or enclosure (not represented in
FIGS. 3A to 3D ) containing the alignedsubstrates FIG. 3B ). - Indeed, in most instances, it has been observed that lowering the pressure in chamber to a value of less than 5 mbar, an preferably less than 3 mbar, initiation of a contact point and propagation of the bonding wave occur spontaneously, that is to say without applying additional mechanical pressure on the wafers. Decreasing the pressure into the chamber or enclosure below 5 mbar was sufficient to spontaneously trigger this initiation. It is currently believed that under these low pressure conditions, the weight of the substrate on the underlying substrate is sufficient to spontaneously initiate the molecular bonding.
- In case where the pressure in the chamber is not lowered to less than 5 mbar or to ensure the initiation of a contact point in any case, a contact point may be also initiated between the two substrates by applying a mechanical pressure Pm onto the
substrate 200, preferably in proximity to its edge. As indicated above, the pressure Pm may lie between 1 MPa and 33.3 MPa and be applied onto a bearing surface less than or equal to 1 mm2. - The initiation of the contact point leads to the propagation of a bonding wave over the interface between the
initial substrate 100 and thefinal substrate 200. The two substrates are then bonded together by molecular adhesion over their entire surface in contact (bonding interface). A buried layer ofmicrocomponents 110 is thus obtained at the bonding interface between thesubstrates - After bonding, and as represented in
FIG. 3C , theinitial substrate 100 is thinned in order to remove a portion of material present above the first series ofmicrocomponents 110 and to form a layer of semiconductor crystalline material 110 a (Step S40). In the event that thesubstrate 100 is a substrate of the SOI type, the buried insulating layer may advantageously be used in order to delimit the thickness of the remaininglayer 100 a. Acomposite structure 300 is then obtained, formed by thefinal substrate 200 andlayer 100 a corresponding to the remaining portion of theinitial substrate 100. Theinitial substrate 100 may be thinned in particular by chemical-mechanical polishing (CMP), by chemical etching, or by cleavage or fracture along a weakened plane formed beforehand in the substrate by atom implantation. - As represented in
FIG. 3D , the next step in the production of the three-dimensional structure consists in forming a second series ofmicrocomponents 140 on the exposedface 102 of thelayer 100 a (FIG. 3D , Step S50). Themicrocomponents 140 may correspond to complementary parts ofmicrocomponents 110 in order to form a finished component and/or to separate components intended to function with themicrocomponents 140. In order to form themicrocomponents 140 in alignment with the buriedmicrocomponents 110, a photolithography mask is used which is similar to that used for forming themicrocomponents 110. Just as when forming themicrocomponents 110, thecomposite structure 300 formed by thefinal substrate 200 and thelayer 100 a is held on asupport plate 130 a of asubstrate holder device 130 identical to thedevice 120. The photolithography mask is then applied to the free surface of thelayer 100 a. - In a variant, the three-dimensional structure is formed by a stack of layers, each layer having been added by the assembly method of the present invention and each layer being in alignment with the directly adjacent layers. In yet another variant, the
final substrate 200 itself also comprises microcomponents. - By virtue of the molecular adhesion bonding method of the invention, it has been possible to bond the
initial substrate 100 onto the final substrate without deformation or at the very least with a reduction of the deformations such that significant residual alignment offsets of themicrocomponents 110 are no longer observed before and after transfer of theinitial substrate 100 onto thefinal substrate 200. It is thus possible to limit the residual offsets to values of less than 100 nm, homogeneously over the entire surface of the wafer. In the particular example ofFIG. 3 theinitial substrate 100 comprising the first series ofmicrocomponents 110 on itsface 101 is first positioned on a bonding support. Then a final wafer orsubstrate 200 is positioned on theinitial substrate 100, its face 201 facing and contacting theface 101 ofsubstrate 100. Spontaneous bonding, that is to say without application of an additional mechanical pressure, that has been observed while the pressure is reduced to a value less than 5 mbar, or preferably less than 3 mbar, leads to limit the residual alignments offsets Δrao between the aligned pair of microcomponents of the first and second series ofmicrocomponents - The
microcomponents 140, even if they are of very small sizes (for example <1 μm), can then be formed easily in alignment with themicrocomponents 110, even after transfer of the initial substrate. This makes it possible, for example, to interconnect with one another the microcomponents existing in two layers, or on two separate faces of the same layer, by means of metallic connections while minimizing the risks of bad interconnection. - The bonding method of the present invention consequently makes it possible to limit the phenomena of inhomogeneous deformations of the wafers during their molecular bonding at low pressure. In the particular case in which the wafers comprise microcomponents, the method in the end makes it possible to eliminate the phenomenon of misalignment (“overlay”) during the transfer of one circuit layer onto another layer or onto a support substrate, and to produce multilayer semiconductor wafers of very high quality.
Claims (7)
1. A three-dimensional composite structure comprising a wafer and a layer of semiconductor crystalline material bonded on the wafer by molecular adhesion, with the layer having a first face located in the vicinity of the bonding interface between the layer and the wafer and a second face opposite to the first face, wherein the layer of semiconductor crystalline material comprises a first series of microcomponents on its first face and a second series of microcomponents on its second face in alignment with the first series of microcomponents, wherein the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 100 nm homogeneously over the entire surface of the structure.
2. The three-dimensional composite structure according to claim 1 , wherein the residual alignment offsets between the first series of microcomponents and the second series of microcomponents are less than 50 nm over at least 50% of the surface of the structure.
3. The three-dimensional composite structure according to claim 1 , having a diameter of at least 300 mm.
4. The three-dimensional composite structure according to claim 1 , wherein at least some of the microcomponents are image sensors.
5. The three-dimensional composite structure according to claim 1 , wherein at least the first series of microcomponents on the wafer are image sensors.
6. The three-dimensional composite structure according to claim 1 , wherein the wafer is a monolayer structure.
7. The three-dimensional composite structure according to claim 1 , wherein the wafer is a silicon-on-insulator structure.
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US13/718,624 US20130105932A1 (en) | 2010-08-11 | 2012-12-18 | Method for molecular adhesion bonding at low pressure |
US14/067,453 US8871611B2 (en) | 2010-08-11 | 2013-10-30 | Method for molecular adhesion bonding at low pressure |
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FR1056566 | 2010-08-11 | ||
FR1056566A FR2963848B1 (en) | 2010-08-11 | 2010-08-11 | LOW PRESSURE MOLECULAR ADHESION COLLAGE PROCESS |
US91008110A | 2010-10-22 | 2010-10-22 | |
US13/192,312 US8338266B2 (en) | 2010-08-11 | 2011-07-27 | Method for molecular adhesion bonding at low pressure |
US13/718,624 US20130105932A1 (en) | 2010-08-11 | 2012-12-18 | Method for molecular adhesion bonding at low pressure |
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US13/718,624 Abandoned US20130105932A1 (en) | 2010-08-11 | 2012-12-18 | Method for molecular adhesion bonding at low pressure |
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US20140065759A1 (en) | 2014-03-06 |
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