US20120319534A1

US20120319534A1 - Bulk acoustic resonator comprising non-piezoelectric layer and bridge

Info

Publication number: US20120319534A1
Application number: US13/168,101
Authority: US
Inventors: Alexandre Shirakawa; Dariusz Burak; Phil Nikkel
Original assignee: Avago Technologies Wireless IP Singapore Pte Ltd
Current assignee: Avago Technologies International Sales Pte Ltd
Priority date: 2011-06-16
Filing date: 2011-06-24
Publication date: 2012-12-20
Anticipated expiration: 2031-06-16
Also published as: DE102012210239A1; DE102012210239B4; US8350445B1

Abstract

A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part application of commonly owned U.S. patent application Ser. No. 13/161,946 entitled “Bulk Acoustic Resonator Comprising Non-Piezoelectric Layer” filed on Jun. 16, 2011 to Dariusz Burak, et al. The present application claims priority under 35 U.S.C. §120 to U.S. patent application Ser. No. 13/161,946, the disclosure of which is hereby incorporated by reference in its entirety.

BACKGROUND

Transducers generally convert electrical signals to mechanical signals or vibrations, and/or mechanical signals or vibrations to electrical signals. Acoustic transducers, in particular, convert electrical signals to acoustic waves and acoustic waves to electrical signals using inverse and direct piezoelectric effects. Acoustic transducers generally include acoustic resonators, such as thin film bulk acoustic resonators (FBARs), surface acoustic wave (SAW) resonators or bulk acoustic wave (BAW) resonators, and may be used in a wide variety of electronic applications, such as cellular telephones, personal digital assistants (PDAs), electronic gaming devices, laptop computers and other portable communications devices. For example, FBARs may be used for electrical filters and voltage transformers.
An acoustic resonator can be formed by a layer of piezoelectric material between two conductive plates (electrodes), which can be formed on a thin membrane. Such a resonator can generate acoustic waves that propagate in lateral directions when stimulated by an applied time-varying electric field, as well as higher order harmonic mixing products. The laterally propagating modes and the higher order harmonic mixing products may have a deleterious impact on functionality.
What is needed, therefore, is a structure useful in mitigating acoustic losses at the boundaries of the BAW resonator to improve mode confinement in the region of overlap of the top electrode, the piezoelectric layer, and the bottom electrode of a BAW resonator (commonly referred to as the active region).

SUMMARY

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.
In accordance with another representative embodiment, a method of forming a bulk acoustic wave (BAW) resonator is disclosed. The method comprises: forming an acoustic reflector in a substrate; forming a first electrode on the substrate over the acoustic reflector; forming a piezoelectric layer and an non-piezoelectric layer adjacent to each other on the first electrode; forming a second electrode over the piezoelectric layer and the non-piezoelectric layer; and forming a layer between the non-piezoelectric layer and the first or second electrode to define a region for a bridge.

BRIEF DESCRIPTION OF THE DRAWINGS

The illustrative embodiments are best understood from the following detailed description when read with the accompanying drawing figures. It is emphasized that the various features are not necessarily drawn to scale. In fact, the dimensions may be arbitrarily increased or decreased for clarity of discussion. Wherever applicable and practical, like reference numerals refer to like elements.

FIG. 1 is a top-view of an FBAR in accordance with a representative embodiment.

FIG. 2 is a cross-sectional view of the FBAR of FIG. 1, taken along a line A-B.

FIGS. 3A and 3B are cross-sectional views illustrating the use of a non-piezoelectric material to prevent loss of acoustic energy in the FBAR of FIG. 2.

FIGS. 4A and 4B are cross-sectional views illustrating the use of an air-bridge to prevent loss of acoustic energy in the FBAR of FIG. 2.

FIG. 5 is a cross-sectional view of the FBAR of FIG. 2, with illustrations of contained acoustic energy.

FIGS. 6A through 6C are cross-sectional views of different variations of the FBAR of FIG. 2 in accordance with representative embodiments.

FIG. 7 is a flowchart illustrating a method of fabricating an FBAR in accordance with a representative embodiment.

FIG. 8 is a flowchart illustrating a method of forming a piezoelectric layer and a non-piezoelectric layer on an electrode in accordance with a representative embodiment.

FIG. 9 is a flowchart illustrating another method of forming a piezoelectric layer and a non-piezoelectric layer on an electrode in accordance with a representative embodiment.

FIG. 10 is a graph illustrating the quality (Q) factor of an FBAR as a function of frequency in accordance with a representative embodiment.

DETAILED DESCRIPTION

In the following detailed description, for purposes of explanation and not limitation, specific details are set forth in order to provide a thorough understanding of illustrative embodiments according to the present teachings. However, it will be apparent to one having ordinary skill in the art having had the benefit of the present disclosure that other embodiments according to the present teachings that depart from the specific details disclosed herein remain within the scope of the appended claims. Moreover, descriptions of well-known apparatuses and methods may be omitted so as to not obscure the description of the illustrative embodiments. Such methods and apparatuses are clearly within the scope of the present teachings.
Generally, it is understood that the drawings and the various elements depicted therein are not drawn to scale. Further, relative terms, such as “above,” “below,” “top,” “bottom,” “upper” and “lower” are used to describe the various elements' relationships to one another, as illustrated in the accompanying drawings. It is understood that these relative terms are intended to encompass different orientations of the device and/or elements in addition to the orientation depicted in the drawings. For example, if the device were inverted with respect to the view in the drawings, an element described as “above” another element, for example, would now be below that element.
The terminology used herein is for purposes of describing particular embodiments only, and is not intended to be limiting. The defined terms are in addition to the technical and scientific meanings of the defined terms as commonly understood and accepted in the technical field of the present teachings.
As used in the specification and appended claims, the terms ‘a’, ‘an’ and ‘the’ include both singular and plural referents, unless the context clearly dictates otherwise. Thus, for example, ‘a device’ includes one device and plural devices.
As used in the specification and appended claims, and in addition to their ordinary meanings, the terms ‘substantial’ or ‘substantially’ mean to within acceptable limits or degree. For example, ‘substantially cancelled’ means that one skilled in the art would consider the cancellation to be acceptable.
As used in the specification and the appended claims and in addition to its ordinary meaning, the term ‘approximately’ means to within an acceptable limit or amount to one having ordinary skill in the art. For example, ‘approximately the same’ means that one of ordinary skill in the art would consider the items being compared to be the same.
The present teachings relate generally to bulk acoustic wave (BAW) resonator structures such as FBARs. As will be described more fully below, the FBARs of the representative embodiments comprise a layer of piezoelectric material disposed between electrodes, a layer of non-piezoelectric (also referred to herein as “np”) material disposed adjacent to the layer of piezoelectric material, and an air-bridge disposed between the layer of np material and one of the electrodes. The np material prevents piston-mode excitation at impedance discontinuity planes of the FBARs, which reduces radiative losses produced by scattering of the continuous spectrum of the piston-mode. The air-bridge, meanwhile, decouples propagating eigenmodes from an external region of the FBARs, which reduces radiative losses due to eigenmode scattering. Accordingly, the combination of the np material and the air-bridge reduces radiative losses that can be caused by different types of scattering.
In the layer of piezoelectric material, crystals are grown in columns that are perpendicular to the plane of the electrodes. As such, the c-axis orientations of the crystals are substantially aligned with one another and the layer of piezoelectric material may be referred to as a highly-textured c-axis piezoelectric layer. Such a layer of piezoelectric material can be fabricated according to one of a variety of known methods, such as those disclosed in U.S. Pat. No. 6,060,818, to Ruby, et al., the disclosure of which is hereby incorporated by reference. The layer of np layer is typically made from the same substance as the layer of piezoelectric material, but is either amorphous or polycrystalline and exhibits little or no piezoelectric effects because of crystal growth in a variety of directions. The layer of np material can be fabricated by methods described below or according to the teachings of U.S. Pat. No. 7,795,781 to Barber, et al., the disclosure of which is hereby incorporated by reference.
Acoustic resonators, and particularly FBARs, can be employed in a variety of configurations for RF and microwave devices such as filters and oscillators operating in a variety of frequency bands. For use in mobile communication devices, one particular example of a frequency band of interest is the 850 MHz “cellular band.” In general, the size of a BAW resonator increases with decreasing frequency such that an FBAR for the 850 MHz band will be substantially larger than a similar FBAR for the 2 GHz personal communication services (PCS) band. In certain applications, the BAW resonator structures provide filters, such as ladder filters.
Certain details of FBARs and materials thereof and their methods of fabrication may be found, for example, in one or more of the following commonly owned U.S. patents, Patent Application Publications and Patent Applications: U.S. Pat. No. 6,107,721, to Lakin; U.S. Pat. Nos. 5,587,620, 5,873,153,6,507,983 and 7,629,865 to Ruby, et al.; U.S. Pat. No. 7,280,007 to Feng, et al.; U.S. Patent Application Publication No. 2007/0205850 to Jamneala, et al.; U.S. Pat. No. 7,388,454 to Richard C. Ruby, et al; U.S. Patent Application Publication No. 2010/0327697 to Choy, et al.; and U.S. Patent Application Publication No. 2010/0327994 to Choy, et al. Additional details may be found, for example, in U.S. Pat. No. 7,889,024 to Bradley et al.; U.S. patent application Ser. No. 13/074,094 of Shirakawa et al., and filed on Mar. 29, 2011, U.S. patent application Ser. No. 13/036,489 of Burak et al., and filed on Feb. 28, 2011, U.S. patent application Ser. No. 13/074,262 to Burak, et al. filed on Mar. 29, 2011, and U.S. patent application Ser. No. 13/101,376 of Burak et al., and filed on May 5, 2011.
The disclosures of these patents and patent applications are specifically incorporated herein by reference. It is emphasized that the components, materials and method of fabrication described in these patents and patent applications are representative and other methods of fabrication and materials within the purview of one of ordinary skill in the art are contemplated.
FIG. 1 shows a top view of an FBAR 100 in accordance with a representative embodiment. As illustrated by FIG. 1, FBAR 100 is formed in the shape of an apodized pentagon.
Referring to FIG. 1, FBAR 100 comprises a top electrode 105 and an interconnect 110. Top electrode 105 is formed illustratively with five sides, including a connection side 115 forming an electrical connection with interconnect 110. Interconnect 110 provides electrical signals to top electrode 105 to excite acoustic waves in piezoelectric layers of FBAR 100.
Top electrode 105 further comprises an air-bridge 120 disposed on multiple sides. As described more fully below, air-bridge 120 reduces propagating eigenmodes at the boundaries of FBAR 100, which can contribute to improved insertion loss and Q-factor over a desired frequency range, such as a passband of FBAR 100.
FIG. 2 is a cross-sectional view of FBAR 100 in accordance with a representative embodiment. The cross-sectional view of FIG. 2 is taken along a line A-B in FIG. 1.
Referring to FIG. 2, FBAR 100 comprises a substrate 205, a bottom electrode 215, a planarization layer 225, a piezoelectric layer 230, a non-piezoelectric (np) layer 220, and top electrode 105.
Substrate 205 contains a cavity 210 or other acoustic reflector, such as a distributed Bragg grating (DBR). Bottom electrode 215 is disposed over substrate 205 and suspended over cavity 210. Planarization layer 225 is formed over substrate 205, and it typically comprises non-etchable borosilicate glass (NEBSG). Planarization layer 225 can be omitted from FBAR 100 to reduce processing costs, but when present it tends to improve the quality of subsequently grown layers, such as a highly textured c-axis piezoelectric layer. In addition, planarization layer 225 can also simplify the processing of the subsequently grown layers.
Piezoelectric layer 230 is formed over bottom electrode 215, and it typically comprises highly-textured c-axis piezoelectric material such as aluminum nitride (AlN) or zinc oxide (ZnO). Np layer 220 is formed adjacent to piezoelectric layer 230 and is typically made from the same substance as piezoelectric layer 230 (e.g., AlN or ZnO). Unlike piezoelectric layer 130, np layer 220 is either amorphous or polycrystalline and exhibits little or no piezoelectric effects. Top electrode 105 is disposed over piezoelectric layer 230 and np layer 220.
Air-bridge 120 is formed between np layer 220 and top electrode 105. As described in further detail below, air-bridge 120 lowers a center of stress distribution of FBAR 100, which decouples propagating eigenmodes of FBAR 100 from an external region. This decoupling of the propagating eigenmodes prevents acoustic energy from leaking out of FBAR 100.
Typical dimensions of air-bridge 120 are approximately 2.0 μm to approximately 10.0 μm in width and approximately 300 Å to approximately 1500 Å in height. Air-bridge 120 extends over cavity 210 by an overlap 260. Overlap 260, also referred to as a decoupling region 260, has a typical width of about 0.0 μm (i.e., no overlap) to approximately 10.0 μm. The size of overlap 260 can affect the Q-factor and other properties of FBAR 100, and it can be determined experimentally to optimize these properties.
The width of air-bridge 120 can be adjusted according to various factors, such as energy tunneling, reliability, and chip size. In general, a wide bridge tends to minimize energy tunneling, which produces strong decoupling between eigenmodes inside on both sides of air-bridge 120. However, wide bridges can also reduce the reliability of FBAR 100 and increase its chip size. In general, the width of air-bridge 120 can be determined experimentally in order to improve the above factors in combination with other considerations, such as the Q-factor and electromechanical effective coupling coefficient k_t ²of FBAR 100.
As indicated above, air-bridge 120 has a typical height of approximately 300 Å to approximately 1500 Å. The lower limit of the height is determined by limits on a process of removing a sacrificial layer during formation of air-bridge 120, and the upper limit of the height is determined in consideration of the potential quality of layers grown over air-bridge 120 and the quality of subsequent processing of possibly non-planar structures.
In some embodiments air-bridge 120 can be formed around an entire perimeter of FBAR 100. However, air-bridge 120 is not required to extend around the entire perimeter. For example, in the example of FIG. 1, air-bridge 120 is formed on only one side of FBAR 100.
Although FIG. 2 shows air-bridge 120 with a rectangular shape, the shape of air-bridge 120 can be modified in various ways. For example, it can be formed as a trapezoid as illustrated, for example, in FIGS. 6A through 6C. In addition, some embodiments also modify air-bridge 120 so that it contains a material rather than an air cavity. For instance, in certain embodiments, air-bridge 120 can be filled with NEBSG, CDO, SiC, or other suitable dielectric material that will not release when a sacrificial material in cavity 210 is released. In other embodiments, air-bridge 120 is filled with one of tungsten (W), molybdenum (Mo), aluminum (Al) or iridium (Ir), or other suitable metal that will not release when the sacrificial material disposed in cavity 210 is released.
An active region 235 is defined by an overlap of bottom electrode 215, piezoelectric layer 230, and top electrode 105. The use of np layer 220 in combination with air-bridge 120 reduces acoustic losses at the boundaries of FBAR 100 to improve mode confinement in active region 235.
The width of an overlap 240 between top electrode 105 and np layer 220 is selected to reduce acoustic losses resulting from scattering of both continuous modes and a lowest order propagating eigenmode in np layer 220 at an edge 245 of top electrode 105. As described more fully below, in certain embodiments the width of overlap 240 is selected to be greater than or equal to the inverse of the attenuation constant (1/k) (where k is the attenuation constant of the lowest order evanescent mode (e^−kx) in the np layer 220 and closely approximates the behavior of continuous modes. Alternatively, the width of the overlap 240 is selected to be an integer multiple (1,2,3, . . . ) of quarter-wavelength (λ/4) of the lowest order propagating eigenmode in the np layer 108.
When the driving electrical signal has a frequency in a vicinity of a series resonance frequency (F_s) of FBAR 100, electrical energy is transferred to acoustic energy and vice-versa. While an electrical field (and thus electric energy density) is confined to the region defined by an overlap of top electrode 105 and bottom electrode 215, an acoustic field (and thus acoustic energy density) can be both confined to the region under the electrode (in the form of continuous modes), or it can propagate away (in the form of propagating eigenmodes). The electric field profile is determined by the lateral shape of top electrode 105, as bottom electrode 215 extends beyond top electrode 105 in an x-y plane in the depicted coordinate system.
Mathematically, the lateral shape of the electrical field in active region 235 can be represented as a Fourier superposition of plane waves propagating at different angles with respect to top or bottom interfaces of the piezoelectric layer 230 in FBAR 100. It should be emphasized that this is purely a mathematical concept, as there are no physical electric field waves propagating in the structure (other than associated with propagating acoustic waves). In other words, the spatial spectrum of the electric field is given by a Fourier transform on an electric field profile.
Each spatial spectral component of the electric field excites an acoustic plane wave propagating at the same angle with respect to top or bottom interfaces of piezoelectric layer 230. Unlike the electric field, which is confined vertically by the presence of bottom and top electrodes 215 and 105, the excited acoustic waves can propagate vertically through all the layers of FBAR 100. However, in general, electrically excited acoustic plane waves cannot propagate freely beyond active region 235 of FBAR 100 because of destructive interference of these acoustic plane waves upon the reflection from the interfaces.
The non-propagating waves in active region 235 form a set of continuous modes. The continuous modes decay exponentially in a direction away from an excitation region defined by an overlap of top electrode 105 and piezoelectric layer 230. However, for some spatial spectral components of the electric field, the excited acoustic waves interfere constructively upon reflections from the interfaces of the layer stack that comprise FBAR 100. These acoustic plane waves can propagate freely in the lateral direction (x-z plane) away from active region 235, and are referred to as propagating eigenmodes of FBAR 100. If these propagating eigenmodes are not confined to active region 235 or suppressed, deleterious loss of energy results. This loss of energy is manifested, for example, by a reduced Q-factor in FBAR 100.
The Fourier superposition of plane waves excited under top electrode 105 can be mathematically represented as a superposition of contributions from complex poles corresponding to propagating and evanescent eigenmodes for a given stack. The evanescent eigenmodes generally cannot propagate in the stack and decay exponentially from the point of excitation. Such a decomposition can be generally performed for any forced system, where forcing happens either through electrical excitation (like that under top electrode 105) or through mechanical excitation. The mechanical excitation occurs, for example, at an interface between two regions (e.g., an interface between piezoelectric layer 230 and np layer 220), where one region exhibits a known forcing motion, while the other region is passive and both regions are coupled through the continuity of stress and particle velocities at the interface between them.
In FBAR 100, motion in active region 235 is electrically excited, while motion in np layer 220 is mechanically excited and results from boundary conditions at the interface of the piezoelectric layer 230 and np layer 220. Piezoelectric layer 230 and np layer 220 are made of the same substance in order for these layers to be substantially elastically identical. Accordingly, their corresponding sets of propagating eigenmodes and evanescent eigenmodes will be also substantially identical. As a result, any propagating eigenmode excited in piezoelectric layer 230 within active region 235 will excite a corresponding propagating eigenmode of substantially equal amplitude in np layer 220. Similarly, any evanescent eigenmode excited by the electric field in piezoelectric layer 230 in active region 235 will excite a corresponding evanescent mode of substantially equal amplitude in np layer 220.
There is a significant difference in modal profiles between propagating and evanescent eigenmodes in the lateral direction (x-direction in FIG. 2). The modal profile is defined as a complex amplitude of particle displacement as a function of the lateral direction and a vertical direction (y-direction in FIG. 2). Propagating modes have a form of spatially periodic function, both in active region 235 and in np layer 220 outside of active region 235. By contrast, evanescent modes have a constant profile (i.e., the displacement amplitude does not depend on x-direction) in active region 235, and they decay exponentially in the direction away from the interface of piezoelectric layer 230 and np layer 220.
For typical electrical excitation, the lowest-order evanescent eigenmode contains a substantial portion (e.g., ˜50%) of the elastic energy compared to energy confined in other higher-order evanescent eigenmodes and in the propagating eigenmodes. However, this partitioning of energy between the various eigenmodes depends on the frequency of excitation and the thicknesses and materials of layers in FBAR 100.
In certain illustrative embodiments, the width of overlap 240 is selected to be greater than or equal to the inverse of the attenuation constant (1/k) of the lowest order evanescent eigenmode in the np layer 220. As such, at an acoustic impedance discontinuity defined by an edge 245 of top electrode 105, the lowest order evanescent mode will have decayed sufficiently to prevent energy loss due to scattering at this interface.
Propagating eigenmodes of np layer 220 are mechanically excited at the interface of piezoelectric layer 230 and np layer 220 and they travel towards edge 245 of top electrode 105. Edge 245 presents a comparatively large acoustic impedance discontinuity for the propagating eigenmode, thus causing scattering and reflection of this eigenmode back to towards active region 235. This backward propagating eigenmode will interfere with the propagating mode excited at the interface of piezoelectric layer 230 and np layer 220. Depending on the phase upon the reflection and the width of overlap 240, the interference of the propagating eigenmode reflected at edge 245 with the propagating eigenmode excited at the interface of the piezoelectric layer 230 and the np layer 220 can be either constructive or destructive. It is beneficial to suppress the propagating mode amplitude in order to reduce the amount of energy that can possibly be lost to the propagating eigenmodes beyond edge 245. The existing modes beyond edge 245 include purely propagating shear and flexural modes, as well as a complex evanescent thickness extensional mode.
The propagating eigenmodes of np layer 220 also travel from the interface of piezoelectric layer 230 and np layer 220 toward air-bridge 120. Air-bridge 120 partially decouples these propagating eigenmodes from a region outside of FBAR 100, which can reduce the amount of acoustic energy lost due to these modes. This decoupling may happen due to the reflection of the propagating eigenmode from the edge of air-bridge 120, analogously to the reflection of the propagating eigenmode from the edge 245 of the top electrode 105 described above.
The above description is a single-excitation-point (e.g. at the interface between piezoelectric layer 230 and np layer 220) approximation to the complete case of the propagating eigenmode excitation problem, and is given to facilitate basic appreciation for the effects arising from the wave nature of the case considered here. As noted above, the propagating eigenmodes are continuously excited in the entire active region 235 and as such form a diffraction pattern in np layer 220. This diffraction pattern is further complicated by the presence of large acoustic impedance discontinuity at edge 245 and at the edge of the air-bridge 120.
Typically, numerical analysis is required to compute and analyze the diffraction pattern formed in FBAR 100 comprising piezoelectric layer 230, np layer 220, edge 245 and air-bridge 120. As described more fully below, improved FBAR 100 performance resulting from suppression of the diffraction pattern in np layer 220 occurs when the width of overlap 240 of top electrode 105 and np layer 220 are an integer multiple (1,2,3, . . . ) of quarter-wavelength (λ/4) of the lowest order propagating eigenmode in the np layer 220. In order to foster this diffractive effect, in certain embodiments, the width of overlap 240 of top electrode 105 and np layer 220 is selected to be an integer multiple (1,2,3, . . . ) of quarter-wavelength (λ/4) of the lowest order propagating eigenmode in np layer 220. Because a significant portion of the energy of propagating eigenmodes in np layer 220 is found in the first order propagating eigenmode, the largest amount of modal suppression can be achieved by fostering diffractive suppression of this mode in np layer 220. In certain embodiments the greatest parallel impedance (Rp) and the highest Q is attained by selecting the width of the overlap 240 of the top electrode 105 and the np layer 220 is selected to be an integer multiple (1,2,3, . . . ) of quarter-wavelength (λ/4) of the lowest order propagating eigenmode in the np layer 220.
FIGS. 3A and 3B are cross-sectional views illustrating the use of an np material to prevent loss of acoustic energy in FBAR 100 of FIG. 2. For simplicity of illustration, FIGS. 3A and 3B show FBAR 100 without air-bridge 120. This is intended to illustrate the effects of the np material independent of air-bridge 120.
Referring to FIGS. 3A and 3B, a first curve 305 illustrates evanescent eigenmodes, and a second curve 310 illustrates propagating eigenmodes. The evanescent modes have a constant profile in active region 235, and they decay exponentially at the boundaries of active region 235. By contrast, the propagating eigenmodes have a spatially periodic profile both inside and outside of active region 235. Beyond the edge of top electrode 105 only a complex evanescent version of thickness extensional mode (electrically excited under top electrode 105) can exist. The complex evanescent mode is in general characterized by non-zero both real and imaginary parts of the propagating constant. However, there are other pure propagating modes, notably shear and flexural ones, than can exist in the region beyond top electrode 105.
The evanescent eigenmodes and the propagating eigenmodes both tend to scatter at impedance discontinuities in FBAR 100. For example, in FIGS. 3A and 3B, there are impedance discontinuities at a left boundary of top electrode 105 and a right boundary of cavity 210.
In the example of FIG. 3A, active region 235 extends all the way to the impedance discontinuities, so the evanescent eigenmodes tend to scatter at the discontinuities, as illustrated by two arrows labeled 315. This scattering can be reduced, however, by forming np layer 220 adjacent to piezoelectric layer 230, as illustrated in FIG. 3B.
In the example of FIG. 3B, the evanescent eigenmodes decay exponentially at interfaces between piezoelectric layer 230 and np layer 220. Consequently, these modes are substantially absent at the impedance discontinuities defined by the left boundary of top electrode 105 and the right boundary of cavity 210. As a result, the scattering shown of FIG. 3A is reduced in the example of FIG. 3B. Moreover, in an ideal case comparable to FIG. 3B, the diffraction pattern of the propagating mode is such that it is perfectly suppressed and so the curve 310 present in FIG. 3A is absent in FIG. 3B.
FIGS. 4A and 4B are cross-sectional views illustrating the use of an air-bridge to prevent loss of acoustic energy in the FBAR of FIG. 2. For simplicity of illustration, FIGS. 4A and 4B show FBAR 100 without np layer 220. This is intended to illustrate the effects of air-bridge 120 independent of np layer 220.
Referring to FIGS. 4A and 4B, an inner curve 405, a middle curve 410, and an outer curve 415 represent different eigenmodes of FBAR 100. More specifically, inner curve 405 represents eigenmodes that exist in an inner region of FBAR 100, middle curve 410 represents eigenmodes in a region including air-bridge 120, and outer curve 415 represents eigenmodes in an outer region of FBAR 100.
Referring to FIG. 4A, in the absence of air-bridge 120, inner curve 405, middle curve 410, and outer curve 415 have substantially the same shape, indicating relatively strong coupling between the eigenmodes of the inner region of FBAR 100, and the eigenmodes of the outer region of FBAR 100 along the connection side 115 shown in FIG. 1. This strong coupling allows propagating eigenmodes to readily escape active region 235, causing a loss of acoustic energy.
Referring to FIG. 4B, the presence of air-bridge 120 changes the stress distribution of the region including air-bridge 120. In particular, air-bridge 120 may lower the center of stress distribution in this region. This modifies the eigenmodes of the region encompassed by air-bridge 120, as illustrated by a modified shape of middle curve 410 in FIG. 4B. Middle curve 410 corresponds to a complex evanescent mode at FBAR's frequency of operation that decays exponentially in the direction away from an edge 420 of air-bridge 120. Meanwhile, the inner and outer regions of FBAR have substantially the same propagating eigenmodes in both FIGS. 4A and 4B, as illustrated by inner and outer curves 405 and 415.By changing the eigenmodes of FBAR 100 in this manner, air-bridge 120 decouples the eigenmodes of the inner region of FBAR 100 from the eigenmodes in the outer region of FBAR 100. Generally, an optimum width of air-bridge 120 depends on the reflection of the eigenmodes at edge 420, which is the boundary of active region 235 (also referred to herein as an FBAR region), and a decoupling region 260. Due to the smaller thickness of layers in the decoupling region 260 only complex evanescent modes for the thickness-extensional motion can exist at the operating frequency of the FBAR 100. These complex evanescent modes are characterized by a characteristic decay length and a specific propagation constant.
Air-bridge 120 should be wide enough to ensure suitable decay of complex evanescent waves excited at the boundary between the FBAR region and the decoupling region. Wide bridges tend to minimize tunneling of energy into the field region where propagating modes exist at the frequency of operation, as illustrated by outer curve 415. On the other hand, if air-bridge 120 is too wide, the electric field can reduce the effectiveness of the electromechanical coupling of the resonator and the reliability issues can arise. Both factors can limit the placement of similar FBARs (not shown) from being placed in close proximity, thus unnecessarily increasing the total area of a chip.
In practical situations, the propagating component of the complex evanescent wave can be used to find the optimum width of air-bridge 120. In general, where the width of air-bridge 120 is equal to an integer multiple of the quarter-wavelength of the complex evanescent wave, the reflectivity of the eigenmodes can be further increased, which can be manifested by Rp and Q attaining maximum values. Typically, depending on the details of the excitation mechanism, other propagating modes of decoupling region 260, such as shear modes and flexural modes, can impact Rp and Q. The width of air-bridge 120 can be modified in view of these other propogating modes. Such optimum width of air-bridge 120 can be determined experimentally.
FIG. 5 is a cross-sectional view of the FBAR of FIG. 2, with illustrations of contained acoustic energy. As illustrated by FIG. 5, the combination of np layer 220 and air-bridge 120 reduces multiple forms of energy loss in FBAR 100. In particular, it reduces energy loss due to scattering of evanescent eigenmodes at impedance discontinuities, as illustrated by the first curve 305, and it also reduces energy loss due to propagating eigenmodes, as illustrated by inner, middle and outer curves 405, 410, and 415, respectively.
FIGS. 6A through 6C are cross-sectional views of different variations of the FBAR of FIG. 2 in accordance with representative embodiments. These variations are intended to illustrate that the geometry and positioning of various features of FBAR 100 can be modified in various ways to achieve different design objectives.
In the variation shown in FIG. 6A, air-bridge 120 is replaced by an air-bridge 120′ having a trapezoidal shape, and an additional bridge structure 120″ is formed below top electrode 105. In addition, cavity 210 is replaced by a cavity 210′. The slanting walls of cavity 210′ reflect more closely the shape actually formed during the processing. The slanting walls of air-bridge 120′ can be beneficial to the quality of layers formed over these features. Air-bridge 120′ can have dimensions and overlap properties similar to those discussed above in relation to FIG. 2. The additional bridge structure 120″ has the shape of approximately one-half of air-bridge 120′ and it forms a wing-type shape (See above-referenced U.S. patent application Ser. No. 12/626,035, to Choy, et al.) in top electrode 105. Piezoelectric layer 230 is centered between air-bridge 120′ and additional bridge structure 120″.
In the variation shown in FIG. 6B, air-bridge 120′ and additional bridge structure 120″ are both repositioned so that they are located below np layer 220. In this configuration, the dimensions and overlap properties of air-bridge 120′ can be similar to those in FIG. 6A. In addition, piezoelectric layer 230 is centered between air-bridge 120′ and additional bridge structure 120″.
In the variation shown in FIG. 6C, two air-bridges 120′ are formed above and below np layer 220 on a right side of piezoelectric layer 230, and two additional bridge structures 120″ are formed above and below np layer 220 on the right side of piezoelectric layer 230. The use of multiple air-bridges can further decouple the propagating eigenmodes of an active region from an external region. In addition, piezoelectric layer 230 is centered between air-bridges 120′ and additional bridge structures 120″.
FIG. 7 is a flowchart illustrating a method of forming an FBAR in accordance with a representative embodiment. For convenience of explanation, the method of FIG. 7 will be described with reference to FBAR 100 of FIG. 2. However, the method is not limited to forming an FBAR with the configuration of FIG. 2. In the description that follows, example method steps are indicated by parentheses.
Referring to FIG. 7, the method begins by etching substrate 205 to form cavity 210 (705). In a typical example, substrate 205 comprises silicon, and cavity 210 is formed by conventional etching technologies.
Next, a sacrificial layer is formed in cavity 210 (710). The sacrificial layer is subsequently removed to form an air gap in cavity 210. The air gap can act as an acoustic reflector to prevent acoustic energy from being absorbed by substrate 205. As an alternative to cavity 210, another type of acoustic reflector can be formed in or on substrate 205, such as a distributed Bragg reflector.
After the sacrificial layer is formed in cavity 210, bottom electrode 215 is formed over substrate 205 (715). In addition, planarization layer 225 is also formed over substrate 205 (720).
After bottom electrode 215 and planarization layer 225 are formed, piezoelectric layer 230 and np layer 220 are formed over bottom electrode 215 and planarization layer 225 (725). The formation of piezoelectric layer 230 and np layer 220 can be accomplished, for example, by a method illustrated in FIG. 8 or FIG. 9, as described below.
After piezoelectric layer 230 and np layer 220 are formed, a sacrificial layer is deposited on np layer 220 to define air-bridge 120 (730). Thereafter, top electrode 105 is formed over piezoelectric layer 230, np layer 220, and the sacrificial layer defining air-bridge 120 (735). Finally, the sacrificial layer of air-bridge 120 and the sacrificial layer of cavity 210 are removed to complete FBAR 100 (740).
FIG. 8 is a flowchart illustrating a method of forming a piezoelectric layer and an np layer on an electrode in accordance with a representative embodiment. The method of FIG. 8 can be performed in step 725 of FIG. 7, for example. For convenience of explanation, the method of FIG. 8 will be described with reference to FBAR 100 of FIG. 2. However, the method is not limited to forming an FBAR with the configuration of FIG. 2.
Referring to FIG. 8, the method begins by forming an etch stop layer (e.g., AlN, not shown) over bottom electrode 215 to protect it from being etched in subsequent processes (805). Thereafter, a disruptive seed layer (not shown) is formed over bottom electrode 215 and planarization layer 225 (810). For AlN, the disruptive seed layer can be an oxide (e.g., carbon doped oxide (CDO) or silicon dioxide SiO₂) or silicon carbide (SiC). The disruptive seed layer can be relatively thin with a thickness range between approximately 50 Å and approximately 500 Å. As described below, the disruptive seed layer fosters fabrication of np layer 220 comprising amorphous or polycrystalline material that exhibits little or no piezoelectric effects because of crystal growth in a variety of directions. For other piezoelectric materials (e.g. ZnO) removal of the seed layer, which is typically provided to improve the quality of subsequently grown piezoelectric material, may be required to foster the disoriented growth.
Next, the disruptive seed layer is photo-patterned and removed except in regions above bottom electrode 215 where np layer 220 is desirably grown (815). Next, exposed portions of the etch stop layer are removed by a known method (820). Thereafter, a material useful for piezoelectric layer 230 is grown over the exposed bottom electrode 215 and the disruptive seed layer (825). In regions over the first electrode, the growth results in highly textured c-axis piezoelectric material such as AlN or ZnO. However, in regions above the disruptive seed layer, material of the same substance as piezoelectric layer 230 is formed, but the crystal growth is purposefully disoriented and an amorphous or polycrystalline layer forms the np layer 220.
FIG. 9 is a flowchart illustrating another method of forming a piezoelectric layer and an np layer on an electrode in accordance with a representative embodiment. Like the method of FIG. 8, the method of FIG. 9 can also be performed in step 725 of FIG. 7, for example. For convenience of explanation, the method of FIG. 9 will be described with reference to FBAR 100 of FIG. 2. However, this method is not limited to forming an FBAR with the configuration of FIG. 2.
Referring to FIG. 9, after bottom electrode 215 is formed, fabrication of highly textured c-axis piezoelectric material (e.g., AlN or ZnO) is commenced (905). After forming an initial piezoelectric layer having a thickness being a fraction of the final thickness of np layer 220, the growth is interrupted (910) and a mask is formed over the area of the piezoelectric layer grown thus far, except where it is desired to grow np layer 220 (915).
The initial layer thickness is typically selected to be in a range of 20% to 80% of the final thickness of np layer 220. Notably, if the initial layer is too thin, the layer subsequently grown may have piezoelectric properties, which is not desired of np layer 220. By contrast, if the initial layer is too thick, the piezoelectric properties of already grown material may dominate the properties of np layer 220. As such the optimal initial layer thickness is determined experimentally.
Next, an ion implantation step is carried out to reduce or destroy the crystallinity of the material in the unmasked region (i.e., where np layer 220 is to be formed) (920). In various embodiments, the ions used for this ion implantation step can be oxygen ions, argon ions, boron ions, phosphorous ions or hydrogen ions. The ion implantation can be accomplished by known methods, and it can be carried out with a single energy and dose or multiple energies and doses. For example, the energy of the ion implantation can be in the range of approximately 150 keV to approximately 450 keV, and the doses are between approximately 1×10¹⁴/cm²to approximately 1×10¹⁶/cm².
After the ion implantation is completed, the mask is removed, and deposition of the material continues until a desired thickness is achieved (925). In the masked regions, piezoelectric layer 230 is formed, and in unmasked regions, np layer 220 is formed. Notably, because a disruptive seed layer is not provided, piezoelectric layer 230 and the np layer 220 have substantially the same thickness, and their upper surfaces (over which the top electrode 105 is formed) are substantially coplanar.
In the above described embodiments, np layer 220 can have a thickness that is substantially identical to that of piezoelectric layer 230, or slightly greater in thickness because of the added disruptive seed layer. As noted above, np layer 220 exhibits little or no piezoelectric effects. In certain embodiments, np layer 220 has a piezoelectric coupling coefficient (e_33np) that is less than the piezoelectric coupling coefficient (e_33p) of the piezoelectric layer. Illustratively, e_33npis in the range of approximately 0.01 e_33pto approximately 0.8 e_33p. As described above, a comparatively low e_33npensures beneficial decay of the evanescent eigenmode in np layer 220, improved propagating eigenmode confinement in active region 235, and improved performance (e.g., Q-factor) of FBAR 100.
FIG. 10 is a graph illustrating the measured Q-factor of an FBAR such as that illustrated in FIG. 2 (curve 1005). For comparison purposes, FIG. 10 also shows Q-factors of the FBAR without the air-bridge but with np layer 220 (curve 1010), and without the air-bridge and the non-piezoelectric layer (curve 1015). As indicated by curve 1005, the FBAR including the air-bridge and np layer has a significantly improved Q-factor in a frequency range of interest around 2 GHz.
As indicated by the foregoing, in accordance with illustrative embodiments, BAW resonator structures comprising a non-piezoelectric layer and an air-bridge and their methods of fabrication are described. One of ordinary skill in the art appreciates that many variations that are in accordance with the present teachings are possible and remain within the scope of the appended claims. These and other variations would become clear to one of ordinary skill in the art after inspection of the specification, drawings and claims herein. The invention therefore is not to be restricted except within the scope of the appended claims.

Claims

1. A bulk acoustic wave (BAW) resonator, comprising:

a first electrode formed on a substrate;

a piezoelectric layer formed on the first electrode;

a second electrode formed on the first piezoelectric layer;

a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and

a bridge formed between the non-piezoelectric layer and the first or second electrode.

2. The BAW resonator of claim 1, wherein the bridge is an air-bridge.

3. The BAW resonator of claim 1, wherein the bridge comprises a cavity filled with a dielectric material or a metal.

4. The BAW resonator of claim 1, wherein the non-piezoelectric layer is polycrystalline.

5. The BAW resonator of claim 1, wherein the piezoelectric layer comprises a material, and the non-piezoelectric layer is a non-crystalline form of the material.

6. The BAW resonator of claim 5, wherein the material is aluminum nitride.

7. The BAW resonator of claim 1, further comprising an acoustic reflector disposed beneath the first electrode.

8. The BAW resonator of claim 7, wherein the acoustic reflector comprises a cavity, and the bridge overlaps the cavity in a lateral direction of the BAW resonator.

9. The BAW resonator of claim 1, wherein the piezoelectric layer has a piezoelectric coupling coefficient (e33) and the non-piezoelectric layer has a piezoelectric coupling coefficient that is less or equal to 80% of the first piezoelectric coupling coefficient

10. The BAW resonator of claim 1, wherein the bridge is formed on multiple sides of a BAW resonator structure formed in an apodized pentagon shape.

11. The BAW resonator of claim 1, wherein the bridge has a trapezoidal shape.

12. A method of forming a bulk acoustic wave (BAW) resonator, comprising:

forming an acoustic reflector in a substrate;

forming a first electrode on the substrate over the acoustic reflector;

forming a piezoelectric layer and an non-piezoelectric layer adjacent to each other on the first electrode;

forming a second electrode over the piezoelectric layer and the non-piezoelectric layer; and

forming a layer between the non-piezoelectric layer and the first or second electrode to define a region for a bridge.

13. The method of claim 12, wherein the layer formed between the non-piezoelectric layer and the first or second electrode is a sacrificial layer, the method further comprising:

removing the sacrificial layer to produce the bridge as an air-bridge between the non-piezoelectric layer and the first or second electrode.

14. The method of claim 12, wherein the layer formed between the non-piezoelectric layer and the first or second electrode comprises a dielectric material or a metal used as the bridge.

15. The method of claim 12, wherein forming the piezoelectric layer and the non-piezoelectric layer adjacent to each other on the first electrode comprises:

forming an etch stop layer on the first electrode;

forming a disruptive seed layer over the first electrode;

removing the disruptive seed layer except in regions where the non-piezoelectric layer is to be formed;

removing exposed portions of the etch stop layer;

depositing a material to grow the piezoelectric layer.

16. The method of claim 12, wherein forming the piezoelectric layer and the non-piezoelectric layer adjacent to each other on the first electrode comprises:

depositing a piezoelectric material on the first electrode;

interrupting growth of the piezoelectric material;

forming an ion-implantation mask exposing a region corresponding to the non-piezoelectric layer;

performing ion-implantation on the exposed non-piezoelectric layer; and

further depositing the material to grow the piezoelectric layer and the non-piezoelectric layer.

17. The method of claim 12, wherein the bridge overlaps the acoustic reflector in a lateral direction of the BAW resonator.

18. The method of claim 12, wherein the piezoelectric layer and the non-piezoelectric layer comprise aluminum nitride.

19. The method of claim 12, wherein the piezoelectric layer and the non-piezoelectric layer are formed with substantially coplanar upper surfaces.

20. The method of claim 12, wherein forming the acoustic reflector in the substrate comprises depositing a sacrificial layer in a cavity of the substrate, and subsequently removing the sacrificial layer, and wherein the sacrificial layer deposited in the substrate comprises the same material as the sacrificial layer formed on the non-piezoelectric layer to define the region for the air-bridge.